JP2014086700A - Solid state image pickup device and image pickup system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a solid state image pickup device having high sensitivity.SOLUTION: A pixel in which a beam incident on a photoelectric conversion part from a first plane side via a lens part is reflected at a reflection plane of a reflection part after having passed through a second plane, and enters from the second plane side back into the photoelectric conversion part has such a structure that the sectional area at the second plane and the sectional area at the reflection plane of a beam heading from the photoelectric conversion part to the reflection part are larger than the sectional area, in a section between the photoelectric conversion part and the reflection part, of the beam heading from the photoelectric conversion part to the reflection part.

Description

  The present invention relates to a solid-state imaging device and an imaging system.

  In a back-illuminated solid-state imaging device, since the thickness of a semiconductor layer is generally thinner than that of a front-illuminated type, incident light (particularly light having a long wavelength) can be transmitted without being sufficiently absorbed in the semiconductor layer. Patent Documents 1 and 2 disclose a structure having a reflection part that reflects light transmitted through a semiconductor layer (semiconductor substrate). According to the structure of Patent Document 1, the microlens (110) condenses incident light inside the photoelectric conversion unit (130), and the reflection unit 150 condenses the reflected light inside the photoelectric conversion unit. Further, according to the structure of Patent Document 2, the light L1 and L3 (normally incident light) that are perpendicularly incident on the device are collected on the surface (126) of the reflecting portion (128).

JP 2010-1118412 A U.S. Pat. No. 7,755,123

  In the solid-state imaging device, wiring for supplying power, driving pixels, or reading signals is provided on the surface side of the semiconductor layer. Therefore, it is desirable not to provide a large-area reflecting portion on one surface, but to arrange a small-area reflecting portion in a plurality. However, in the case where a plurality of reflecting portions having a small area are provided, a gap is generated between the reflecting portions.

  The condensing position of light obliquely incident on the solid-state imaging device (oblique incident light) deviates from the condensing position of normal incident light. For this reason, when the reflection part is configured with a small area, part of the obliquely incident light leaks into the gap between the reflection parts, and light that is not reflected by the reflection part is generated, which may cause a reduction in sensitivity.

  An object of the present invention is to provide a solid-state imaging device with high sensitivity.

  One aspect of the present invention relates to a solid-state imaging device, and the solid-state imaging device includes a semiconductor layer having first and second surfaces that are opposite to each other, and a semiconductor layer on the first surface side of the semiconductor layer. A solid-state imaging device comprising: a first region provided; and a second region provided on the second surface side of the semiconductor layer, wherein a plurality of photoelectric conversion units are arranged in the semiconductor layer In the first region, a plurality of lens portions each for focusing light are arranged along the first surface, and in the second region, a plurality of reflection portions for reflecting light are provided. A light beam that is arranged along the first surface and that has entered the photoelectric conversion unit from the first surface side through the lens unit passes through the second surface and is reflected by the reflection surface of the reflection unit. A pixel incident on the photoelectric conversion unit from the second surface side, The cross-sectional area on the second surface and the cross-sectional area on the reflection surface of the light beam traveling from the photoelectric conversion unit to the reflection unit are the photoelectric conversion unit and the reflection unit of the light beam traveling from the photoelectric conversion unit to the reflection unit. It has the structure which becomes larger than the cross-sectional area in the part between.

  According to the present invention, a highly sensitive solid-state imaging device can be provided.

The figure explaining the structural example of this embodiment. The figure explaining the structural example of this embodiment. The figure explaining the comparison result with another structural example. The figure explaining the structural example of other embodiment.

  The solid-state imaging device I according to the first embodiment will be described with reference to FIGS. As shown in FIG. 1A, the solid-state imaging device I has a back-illuminated structure, and includes a front surface A that is a light incident surface and a rear surface B that is the opposite surface. Have The solid-state imaging device I includes an optical region 10, a semiconductor region 20, and a wiring region 30 from the front surface A toward the rear surface B. The semiconductor region 20 includes a semiconductor layer 22 having a front surface C (second surface) and a back surface D (first surface). In the solid-state imaging device I, the extending direction of the front surface A in which the pixels P each including a part of the optical region 10, a part of the semiconductor region 20, and a part of the wiring region 30 are light incident surfaces. Arranged along the line. A support substrate 40 is disposed on the rear surface B side.

  The optical region 10 includes a microlens array 11 that forms the front surface A (first region). The microlens array 11 is configured by arranging a plurality of lens portions, each focusing light, along the back surface D. The optical region 10 can include an intermediate film 12 (light transmission portion or light passage portion) made of a material that transmits light (for example, silicon oxide or silicon nitride). Further, the optical region 10 includes a color filter array 13 disposed between the microlens array 11 and the intermediate film 12.

  The intermediate film 12 can have a role of adjusting the distance between the semiconductor region 20 and the microlens array 11. The intermediate film 12 can also serve as a protective film (passivation film), an antireflection film, and a planarization film. The intermediate film 12 may be a single layer film or a multilayer film.

  In the semiconductor layer 22 of the semiconductor region 20, a plurality of photoelectric conversion portions 21 are arranged along the front surface C and the back surface D. A typical photoelectric conversion unit 21 is a photodiode having a P-type impurity region and an N-type impurity region. The light that has entered from the front surface A and passed through the optical region 10 enters the semiconductor layer 22 from the back surface D, undergoes photoelectric conversion in the photoelectric conversion unit 21, and an electrical signal corresponding to the amount of incident light is obtained.

  The semiconductor region 20 includes a semiconductor element such as a transistor in addition to the photoelectric conversion unit 21. The semiconductor region 20 can also include a gate electrode provided on the surface C of the semiconductor layer 22 to form a MOS transistor. Further, the semiconductor region 20 may include element isolation that electrically isolates the photoelectric conversion unit 21 and the semiconductor element.

Further, the wiring region 30 includes, for example, a wiring pattern 31 formed inside an interlayer insulating film 33 made of SiO ₂ and made of a metal material such as aluminum or copper. The wiring pattern 31 is used, for example, for supplying power or driving various transistors to read out signals.

FIG. 1B schematically shows a layout top view of the solid-state imaging device I. The plurality of pixels P can be composed of a plurality of types. The type of each pixel P differs, for example, in the light selection section of the color filter array 13 in the pixel P. A pixel corresponding to a blue light selection unit (blue filter) that selectively transmits blue light (wavelength λ _R = about 430 to 480 [nm]) is a blue pixel P _B. Green light (wavelength λ _G = 500~570 [nm] C.) a green light selecting unit for selectively transmitting a corresponding pixel (green filter) and green pixel _{P G.} Red light selecting unit that selectively transmits red light (wavelength λ _R = 610~780 [nm] about) the pixel corresponding to the (red filter) and red pixel _{P R.} These blue filter, green filter, and red filter can be arranged according to a Bayer arrangement. In FIGS. 1A and 1B, three or four pixels P are illustrated for ease of explanation.

Each pixel P is provided with a transistor (pixel transistor) for reading out the electric signal corresponding to the photoelectric conversion unit 21. The pixel transistor includes, for example, a transfer transistor M _TX , a reset transistor M _RES , and a source follower transistor M _SF . A signal line for transmitting the control signal TX can be connected to the gate terminal of the transfer transistor _MTX . When the control signal TX is activated, the transfer transistor _MTX transfers the electric charge generated and stored by receiving light in the photoelectric conversion unit 21 to the floating diffusion FD. The amount of current flowing through the source follower transistor M _SF may vary depending on the potential change due to charges transferred to the floating diffusion FD. In this way, a pixel signal can be read from each pixel P. A signal line for transmitting the control signal RES can be connected to the gate terminal of the reset transistor _MRES . When the control signal RES is activated, the reset transistor _MRES can reset the potential of the floating diffusion FD. Each pixel P may be provided with a selection transistor (not shown) for selectively outputting a pixel signal. Incidentally, in FIG. 1 (a) illustrates a gate electrode _{G TX} of the transfer transistor _{M TX.}

In the backside illumination type solid-state imaging device, the thickness of the semiconductor layer 22 is generally smaller than that of the front side illumination type, being about 1 to 10 [μm] and about 2 to 5 [μm]. Therefore, for example, for light having a long wavelength such as red light, a part of the light incident on the semiconductor layer 22 from the back surface D can be transmitted without being subjected to photoelectric conversion. The depth at which half of the red light having a wavelength of 700 [nm] is absorbed is 3 [μm] with respect to the silicon single crystal. That is, half of the red light incident on the 3 [μm] silicon layer is transmitted through the silicon layer. Therefore, for example, for the red pixel P _R, the left and so on of the pixel P shown at the center, it may be arranged a reflector unit 32 in the wiring region 30 (second region) in FIG. 1 (a).

The reflection part 32 may be formed in the first wiring layer (wiring layer closest to the semiconductor layer 22) or the second or higher wiring layer, or a wiring layer for forming the wiring pattern 31. May be formed in different layers. In order to improve the reflectance, it is preferable that the reflecting surface R of the reflecting portion 32 is made of aluminum. The wiring layer can be made of copper having a higher conductivity than aluminum, and the reflecting portion 32 can be made of aluminum having a higher reflectance than copper. The green pixel P _G, sensitivity to green light, as compared with the sensitivity to the red light and blue light, since it greatly affects the resulting image quality in the solid-state imaging device, it is preferable to provide the reflecting portion 32.

The blue pixel P _B may be configured to be provided with the reflective portion 32, but the reflective portion 32 may be omitted, and instead, for example, a wiring pattern may be arranged as necessary. For light having a short wavelength such as blue light, a part of the light incident on the semiconductor layer 22 from the back surface D is absorbed by the semiconductor layer 22 before reaching the front surface C, and is almost transmitted through the semiconductor layer 22. It is because it does not. The depth at which half of the blue light having a wavelength of 460 [nm] is absorbed is about 0.3 [μm] with respect to the silicon single crystal. It is also conceivable that a metal pattern that can function as a reflection portion is provided on the blue pixel P _B that does not require the reflection portion 32 at a position where the distance from the semiconductor layer 22 is equal to the reflection portion 32. However, it is conceivable that stray light from pixels of other colors is reflected by the metal pattern of the blue pixel P _B and causes color mixing. Therefore, in the blue pixel P _B , the metal pattern does not exist at a position where the distance from the semiconductor layer 22 is equal to the reflection part 32, or the area of the metal pattern is made smaller than the reflection part 32 of the pixels of other colors, It is preferable to omit the reflection part 32.

In the red pixel P _R (and the green pixel P _G ) provided with the reflection unit 32, the light beam formed through the lens unit of the microlens array 11 enters the photoelectric conversion unit 21 from the back surface D of the semiconductor layer 22. As described above, this light beam can pass through the semiconductor layer 22. In the present embodiment, the reflecting surface R of the reflecting portion 32 is located away from the semiconductor layer 22. The light beam emitted from the surface C of the semiconductor layer 22 passes through the intermediate portion 333 that is a portion of the interlayer insulating film 33 between the reflecting portion 32 and the semiconductor layer 22 (a portion between the surface C and the reflecting surface R). The light is transmitted from the photoelectric conversion unit 21 toward the reflection unit 32. The light beam is reflected by the reflection surface of the reflection unit 32 and travels from the reflection unit 32 to the photoelectric conversion unit 21. Then, the light enters the photoelectric conversion unit 21 from the surface of the semiconductor layer 22. In this way, there may be a light flux that passes through the surface C after passing through the back surface D, is reflected by the reflecting surface R, and passes through the surface C again. This light beam will be described in more detail with reference to FIG.

  FIG. 2 is an enlarged view of the vicinity of a portion of the interlayer insulating film 33 located between the reflecting portion 32 and the semiconductor layer 22. The dashed-dotted line in FIG. 2 indicates the outline of a light beam (hereinafter referred to as an outward light beam) from the photoelectric conversion unit 21 toward the reflection unit 32. A two-dot chain line in FIG. 2 indicates an outline of a light beam (hereinafter referred to as a return light beam) traveling from the reflection unit 32 to the photoelectric conversion unit 21. The forward beam and the return beam are beams whose pointing vectors are opposite to each other. Let S1 be the cross-sectional area of the surface beam C of the semiconductor layer 22 of the outward light flux. Let S2 be the cross-sectional area of the forward light flux at the intermediate portion 333. Let S3 be the cross-sectional area of the outgoing beam (and the returning beam) at the reflecting surface R. Let S4 be the cross-sectional area of the return beam at the intermediate portion 333. The cross-sectional area of the return path light beam on the surface C of the semiconductor layer 22 is S5.

In FIG. 2, a portion corresponding to the width of the light beam is shown as a cross-sectional area for convenience. In the red pixel P _R (and the green pixel P _G ) including the reflection part 32, the cross-sectional area S1 of the forward path light beam on the surface C and the cross-sectional area S3 on the reflection surface R are larger than the cross-sectional area S2 of the forward light flux on the intermediate part 333. Has a structure that becomes larger. That is, S2 <S1 and S2 <S3 can be satisfied. Further, S3 <S4 <S5 is established. Further, S1 <S5 and S2 <S4 can be established. It is preferable that S1> S3 rather than S1 ≦ S3. This is because the color mixing caused by the return light beam entering the photoelectric conversion unit 21 different from the forward light beam is suppressed by reducing S5.

  It is not necessary to satisfy S2 <S1 and S2 <S3 for the entire portion between the surface C and the reflecting surface R, and S2 <S1 and S2 <for a portion of the portion between the surface C and the reflecting surface R. It is sufficient to satisfy S3. In this example, since S3 <S1, S3 ≦ S2 <S1 is satisfied in a part near the semiconductor layer 22 of the intermediate portion 333, and S2 <S3 <S1 is satisfied in the remaining part. . S2 can take the minimum value at the position indicated by the point X. This point X is a condensing point X described later. The cross section of the light beam at the condensing point X can be regarded as a minimum circle of confusion. Satisfaction of S2 <S1 and S2 <S3 means that the condensing point X is formed in the intermediate portion 333 by the outward light beam. At the condensing point X, the intensity of the pointing vector can take a maximum value. Note that since the light absorption occurs in the semiconductor layer 22, the pointing vector does not always take the maximum value at the focal point X.

  In the fixed imaging device I, wiring for supplying power, driving pixels, or reading signals is provided on the surface C side (second surface side) of the semiconductor layer 22. For this reason, it is difficult to provide a reflecting portion having a reflecting surface R having the same size as the entire area of the surface C. If the reflection part is divided and provided, a wiring pattern or a plug constituting the wiring described above can be arranged between the reflection parts. A plurality of reflecting portions having a relatively large reflecting surface can be provided over a plurality of types of pixels. By arranging the reflection part 32 having a reflection surface having a large area with respect to the photoelectric conversion part 21 over a plurality of pixels, the utilization efficiency of incident light can be improved and the photosensitivity of the solid-state imaging device I can be improved. In addition to layout constraints, color mixing due to stray light can also increase. Therefore, it is preferable to reduce the area of the reflection part 32 as much as possible. The area S0 of the reflecting surface R is preferably larger than the cross-sectional area S1 on the surface C of the outward light beam (S1 <S0). It is also preferable that the area S0 of the reflection surface R is smaller than the cross-sectional area of the return path light beam on the surface C (S0 <S5).

  FIG. 3A shows three examples in which the positions of the condensing points X are different from each other. The first example illustrates the relationship S1 <S2 <S3, and the second example illustrates the relationship S3 <S2 <S1. The third example illustrates the relationship of S2 <S1 and S2 <S3. The first example schematically shows a case where the condensing point X is formed inside the photoelectric conversion unit 21. The second example schematically shows a case where the condensing point X is formed on the surface of the reflecting portion 32. The third example schematically shows a case where the condensing point X is formed between the photoelectric conversion unit 21 and the reflection unit 32.

  The condensing point X indicates a point where the cross-sectional area of the light flux of the normal incident light becomes the smallest after the light passes through the optical region 10 and before or is reflected by the reflecting portion 32. Yes. Similarly, the condensing point Y is the point at which the cross-sectional area of the light beam of obliquely incident light becomes the smallest after the light passes through the optical region 10 and before or is reflected by the reflecting portion 32. Is shown. The condensing point X or Y is a point at which the cross-sectional area of the light beam of the normal incident light or the oblique incident light becomes the smallest by the entire optical system of the solid-state imaging device I. The magnitude relation of the cross-sectional area of the light beam described above can be similarly established not only in vertically incident light but also in obliquely incident light.

  The position of the condensing point X or Y is not determined only by the focal length of one lens portion of the microlens array 11. That is, the normal incident light or the oblique incident light is refracted at each interface of the members constituting the optical system, and the cross-sectional area of the light beam becomes the smallest when the light is reflected or reflected by the reflecting portion 32. Let the point be the condensing point X or Y. Refraction at the back surface C and the front surface D can greatly affect the positions of the condensing points X and Y. This is because the refractive index difference between silicon oxide or silicon nitride used for the insulator layer and silicon used for the semiconductor layer is larger than the refractive index difference between silicon oxide and silicon nitride. Note that the back surface C may be an interface between the optical region 10 and the semiconductor region 20. The surface D can be an interface between the semiconductor region 20 and the wiring region 30.

  FIG. 3B shows a calculation result of the light sensitivity of the solid-state imaging device I for each of the normal incident light and the oblique incident light. Here, the normal incident light exemplifies light (incident angle 0 °) incident on the front surface A that is the incident surface from a direction perpendicular to the surface C, and the oblique incident light is in a direction oblique to the surface C. The light (incident angle 15 degrees) which injected into the front surface A which is an incident surface is illustrated. This calculation result illustrates green light with a wavelength λ = 550 [nm]. In addition, the sensitivity ratio normalized by assuming the sensitivity of normal incidence in the third example as 1 is shown.

  As described above, the area of the reflecting portion 32 is preferably as small as possible. However, when the condensing points X and Y are in the semiconductor layer 22 as in the first example, the cross-sectional area of the light flux near the reflecting surface R exceeds the area S0 of the reflecting surface R and is not reflected by the reflecting portion 32. Light can be generated. Further, since the condensing point Y of obliquely incident light is shifted from the condensing point X of vertically incident light, the ratio of light that removes the reflecting surface R increases. As a result, according to the first example, the amount of light that is not reflected by the reflecting portion 32 in the oblique incident light increases, and the photosensitivity can be lowered. In contrast, in the third example, the sensitivity to vertically incident light is higher than in the first example.

  Further, according to the second example, the obliquely incident light is not reflected by the reflecting portion 32, and the photosensitivity may be lowered. This is because in the second example, the cross-sectional area S3 of the light flux on the reflection surface R is extremely small, so that even if the reflection surface R is removed, most of the light is not reflected. On the other hand, in the third example, the sensitivity to obliquely incident light is higher than in the second example. According to the third example, not only vertically incident light but also obliquely incident light reaching the reflecting unit 32 is often reflected toward the photoelectric conversion unit 21 and suppresses a decrease in light sensitivity to the obliquely incident light. Can do.

  Therefore, according to the present embodiment, in the back-illuminated solid-state imaging device I, it is possible to improve the photosensitivity for both normal incident light and oblique incident light. This makes it possible to achieve good F-number proportionality in the imaging system. In addition, it is possible to reduce the sensitivity difference between the central portion and the peripheral portion of the imaging region of the solid-state imaging device I and to achieve good in-screen uniformity.

As described above, the solid-state imaging device I is designed so as to satisfy the condition that the cross-sectional area of the light beam becomes the smallest after the normal incident light passes through the optical region 10 and before being reflected by the reflection unit 32. It only has to be done. Here, the solid-state imaging device I is designed so that the cross-sectional area of the light after passing through the semiconductor region 20 and before being reflected by the reflecting portion 32 toward the photoelectric conversion portion 21 side, that is, the forward light flux, is the largest. It is better to make it smaller. For example, it may if made the above design for the green light for the green pixel P _G, it suffices made the above design for red light for a red pixel P _R.

  The behavior of light in the solid-state imaging device I can be examined by using a three-dimensional wave optical analysis simulator using a time domain difference method (FDTD method: Finite Difference Time Domain method). The forward beam and the return beam can be distinguished by the direction of the pointing vector. The condensing points X and Y can be determined by the strength of the pointing vector.

  The solid-state imaging device I can be manufactured using a known semiconductor manufacturing process. Specifically, for example, first, an N-type impurity is injected from the surface C side of the P-type semiconductor substrate to form the photoelectric conversion unit 21. Next, on the surface C, for example, the wiring region 30 including the interlayer insulating film 33 and each wiring layer and the reflection portion 32 provided therein is formed. Next, it polishes from the opposite side to the surface C of the semiconductor substrate in which the photoelectric conversion part 21 was formed, and the semiconductor layer 22 of appropriate thickness is obtained.

  Thereafter, the optical region 10 is provided on the back surface D (the first surface side), which is the surface on the polished side of the semiconductor layer 22. Considering the configuration of the optical region 10, the thickness of the semiconductor layer 22, the refractive index of the members constituting these, and the like, the position and size of the reflecting portion 32 so as to satisfy the above-described conditions of the condensing points X and Y. Can also be designed. Further, for example, the intermediate film 12 may be composed of a plurality of layers having light transmittance, or for each type of pixel P so as to satisfy the above-described condition for the wavelength of light corresponding to the type of pixel P. The intermediate film 12 may be designed.

  As mentioned above, although embodiment was described, this invention is not restricted to these, According to the objective, a state, a use, a function, and other specifications, it can change suitably and can also be made by other embodiment. sell. For example, as illustrated in FIG. 4A, the optical region 10 may include a light blocking unit 14 that blocks light at the boundary with the adjacent pixel P. According to this configuration, the light incident on the microlens 11 of the pixel P is prevented from entering the adjacent pixel without entering the corresponding photoelectric conversion unit 21, and color mixing between the adjacent pixels is prevented. be able to.

  Further, as illustrated in FIG. 4B, in the optical region 10, a portion (low refractive index portion 15) having a lower refractive index than the light passing portion is formed at the boundary with the adjacent pixel P. Also good. In the example of FIG. 4B, the light passage portion is a wavelength selection portion of the color filter array 13, but may be a light passage portion of the microlens array 11 or the intermediate film 12. The low refractive index portion 15 can be made of, for example, gas, resin, or silicon oxide. As illustrated in FIG. 4B, the low refractive index portion 15 is disposed between the light passing portions (light transmitting portions) of the color filter array 13. For example, in the intermediate film 12, a plurality of silicon nitride portions may be arranged as light passage portions, and a silicon oxide portion as a low refractive index portion may be disposed between the silicon nitride portions. As described above, according to the configuration having the low refractive index portion, the light that is directed to the low refractive index portion 15 among the light incident on the microlens 11 of the pixel P is converted by the low refractive index portion 15 into the photoelectric conversion portion 21 of the pixel P. Therefore, it is possible to prevent color mixture between adjacent pixels.

  Further, as illustrated in FIG. 4C, the intermediate film 12 may be configured by at least two members (or layers) having different refractive indexes. Further, the in-layer lens array 16 may be formed in the intermediate film 12 by the boundary between the at least two members (or layers) having a curved surface (or a predetermined curvature). The in-layer lens array 16 is provided between the microlens array 11 and the semiconductor region 20 in which the photoelectric conversion units 21 are arranged. The intralayer lens array 16 is provided between the semiconductor region 20 in which the photoelectric conversion units 21 are arranged and the color filter array 13. In one pixel, the microlens array 11 may constitute a first lens unit, and the in-layer lens array 16 may constitute a second lens unit.

  Furthermore, as illustrated in FIG. 4D, the reflection surface of the reflection unit 32 may have a concave shape that reflects light toward the center of the photoelectric conversion unit 21. The shape of the reflecting surface may be, for example, a curved surface shape having a predetermined curvature or a triangular shape. According to this configuration, since the light transmitted through the photoelectric conversion unit 21 is effectively reflected toward the photoelectric conversion unit 21 by the reflection unit 32, the photosensitivity is further improved compared to the case where the reflection surface is flat. Yes.

  An imaging system can be constructed using the solid-state imaging device described above. The imaging system includes not only a camera whose main purpose is photography but also an electronic device (for example, a personal computer or a portable terminal) that is supplementarily provided with a photography function. The imaging system can include a solid-state imaging device exemplified as the above-described embodiment and a processing unit that processes a signal output from the solid-state imaging device. The processing unit can include, for example, a processor that processes digital data based on signal charges generated in the photoelectric conversion unit 21. An A / D converter that generates digital data can be mounted on-chip in a solid-state imaging device, or can be a separate chip. Alternatively, an SIP (System In Package) may be configured by forming an integrated circuit such as a processor on the support substrate 40. The imaging system can include a display unit that displays an image obtained from the solid-state imaging device and a storage unit that stores image data.

Claims (10)

A semiconductor layer having first and second surfaces opposite to each other; a first region provided on the first surface side of the semiconductor layer; and on the second surface side of the semiconductor layer. A solid-state imaging device comprising: a second region provided;
A plurality of photoelectric conversion units are arranged in the semiconductor layer, and in the first region, a plurality of lens units each focusing light are arranged along the first surface, and the second region A plurality of reflecting portions each reflecting light are arranged along the first surface,
In the solid-state imaging device, the light beam incident on the photoelectric conversion unit from the first surface side through the lens unit passes through the second surface and is reflected by the reflection surface of the reflection unit, and the second surface. Including pixels incident on the photoelectric conversion unit from the side of
In the pixel, the cross-sectional area of the second surface of the light beam traveling from the photoelectric conversion unit to the reflection unit and the cross-sectional area of the reflection surface of the light beam traveling from the photoelectric conversion unit to the reflection unit are A solid-state imaging device having a structure that is larger than a cross-sectional area in a portion between the reflecting portion and the reflective portion.   2. The cross-sectional area at the reflection surface of the light beam traveling from the photoelectric conversion unit to the reflection unit is smaller than the cross-sectional area at the second surface of the light beam traveling from the photoelectric conversion unit to the reflection unit. The solid-state imaging device described in 1.   The area of the reflecting surface is larger than the cross-sectional area of the light beam traveling from the photoelectric conversion unit to the reflection unit on the second surface, and the cross-sectional area of the light beam traveling from the reflection unit to the photoelectric conversion unit on the second surface. The solid-state imaging device according to claim 1, wherein the solid-state imaging device is smaller.   The first region is provided with a red light selection portion that selectively transmits red light, a green light selection portion that selectively transmits green light, and a blue light selection portion that selectively transmits blue light. The solid-state imaging device according to claim 1, wherein the luminous flux passes through the red light selection unit or the green light selection unit.   In a pixel including a photoelectric conversion unit on which a light beam having passed through the blue light selection unit is incident, an area of a metal pattern whose distance from the semiconductor layer is equal to that of the reflection unit is smaller than an area of the reflection surface, or the semiconductor layer The solid-state imaging device according to claim 4, wherein a metal pattern does not exist at a position where the distance from the reflector is equal to the reflecting portion.   6. The solid-state imaging device according to claim 1, wherein the first region includes a light blocking unit that blocks light.   The first region includes a plurality of light transmission parts and a low refractive index part having a refractive index lower than that of the light transmission parts and disposed between the light transmission parts. 7. The solid-state imaging device according to any one of items 1 to 6.   The said 1st area | region further contains the wavelength selection part and the lens part provided between the said wavelength selection part and the said photoelectric conversion part, The any one of Claim 1 thru | or 7 characterized by the above-mentioned. The solid-state imaging device described.   The solid-state imaging device according to claim 1, wherein the reflecting surface is a concave surface.   An imaging system comprising: the solid-state imaging device according to any one of claims 1 to 9; and a processing unit that processes a signal output from the solid-state imaging device.