JP2014086433A - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
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- JP2014086433A JP2014086433A JP2012231414A JP2012231414A JP2014086433A JP 2014086433 A JP2014086433 A JP 2014086433A JP 2012231414 A JP2012231414 A JP 2012231414A JP 2012231414 A JP2012231414 A JP 2012231414A JP 2014086433 A JP2014086433 A JP 2014086433A
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- wiring electrode
- nut
- connection terminal
- semiconductor device
- bolt
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 77
- 239000011347 resin Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 238000001816 cooling Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 238000010292 electrical insulation Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005482 strain hardening Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
この発明は、例えば車両などの移動体に搭載されるパワーモジュール等の半導体装置に関するものである。 The present invention relates to a semiconductor device such as a power module mounted on a moving body such as a vehicle.
従来、電気モータにより駆動される電気自動車やハイブリッド自動車などで半導体装置が用いられている。半導体装置は、半導体素子を複合化した半導体モジュール、冷却装置、平滑コンデンサ、配線電極、及び外構ケースなどを備えている。 Conventionally, a semiconductor device is used in an electric vehicle or a hybrid vehicle driven by an electric motor. The semiconductor device includes a semiconductor module in which semiconductor elements are combined, a cooling device, a smoothing capacitor, a wiring electrode, an external case, and the like.
半導体モジュールには外部への接続端子が設けられ、一般にナットとボルトにより配線電極と締結される。配線電極は通常冷却装置等との電気的絶縁のため樹脂モールドでインサート成形され、締結用のナットも配線電極の内側に接触した状態でインサートされている。半導体モジュールの接続端子と配線電極との接続手段としては例えば特開２０１１−１７６９２８号公報が挙げられる。 The semiconductor module is provided with an external connection terminal and is generally fastened to the wiring electrode by a nut and a bolt. The wiring electrode is usually insert-molded with a resin mold for electrical insulation from a cooling device or the like, and a fastening nut is also inserted in contact with the inner side of the wiring electrode. As a connection means between the connection terminal of the semiconductor module and the wiring electrode, for example, Japanese Patent Application Laid-Open No. 2011-176928 is cited.
しかし、近年自動車のスペース効率の向上のため半導体装置のより一層の小型化が求められている。図５に従来の半導体モジュールの接続端子締結部の断面図を示す。冷却装置1に半導体モジュール２、配線電極６がインサート成形された樹脂ケース５が取り付けられ、半導体モジュール２の接続端子２２は配線電極６にボルト７１で取り付けられている。ボルト７１を締結するためのナット８は配線電極６の内側表面に当接され配線電極６と共にインサート成形されている。 However, in recent years, there has been a demand for further downsizing of semiconductor devices in order to improve space efficiency of automobiles. FIG. 5 shows a cross-sectional view of a connection terminal fastening portion of a conventional semiconductor module. A resin case 5 in which the semiconductor module 2 and the wiring electrode 6 are insert-molded is attached to the cooling device 1, and the connection terminals 22 of the semiconductor module 2 are attached to the wiring electrode 6 with bolts 71. The nut 8 for fastening the bolt 71 is in contact with the inner surface of the wiring electrode 6 and is insert-molded together with the wiring electrode 6.
上述した従来の半導体装置において、省スペースを達成するための手段としては、ナット８の厚みを減らす、あるいは樹脂ケース５の厚みを減らす、または接続端子２２と配線電極６の厚みを減らすことが考えられる。しかし、ナット８の厚みはボルト７１のかかり量に直結するため締結の強度が低下する、また樹脂ケース５の厚みを減らすとナット８と冷却装置1の距離が短くなり電気的絶縁性が低下する、接続端子２２と配線電極６の厚みを減らすと断面積が小さくなり電気抵抗が増加してしまうといった問題が生じるため、上述した従来の構成での省スペース化には限界があるという問題点があった。 In the conventional semiconductor device described above, as a means for achieving space saving, it is considered to reduce the thickness of the nut 8, reduce the thickness of the resin case 5, or reduce the thickness of the connection terminal 22 and the wiring electrode 6. It is done. However, the thickness of the nut 8 is directly connected to the applied amount of the bolt 71, so that the fastening strength is reduced. If the thickness of the resin case 5 is reduced, the distance between the nut 8 and the cooling device 1 is shortened and the electrical insulation is reduced. If the thicknesses of the connection terminal 22 and the wiring electrode 6 are reduced, there arises a problem that the cross-sectional area is reduced and the electrical resistance is increased. Therefore, there is a problem that there is a limit to space saving in the above-described conventional configuration. there were.
また、配線電極６の材料には導電率の高い銅が通常用いられるが、コストの観点からアルミニウムを用いられる場合がある。しかし、アルミニウムは銅と比較すると強度が低くクリープ現象によってボルト７１の締め付け力が次第に低下してしまう問題があった。このため、必要な締め付け力を維持させるには初期のボルト７１の締め付け力を上げる、あるいはアルミニウムの種類を変更する、またはボルト７１のサイズアップが必要となり、締め付け力を上げると組み立て性の低下や配線電極６の変形が起こる。アルミニウムの種類を変更すると導電率の低下やコストアップにつながる。また、ボルト７１のサイズアップは半導体装置が大型化するという問題点があった。 Moreover, although copper with high electrical conductivity is normally used for the material of the wiring electrode 6, aluminum may be used from a viewpoint of cost. However, aluminum has a lower strength than copper and has a problem that the tightening force of the bolt 71 gradually decreases due to a creep phenomenon. For this reason, in order to maintain the necessary tightening force, it is necessary to increase the initial tightening force of the bolt 71, or to change the type of aluminum, or to increase the size of the bolt 71. Deformation of the wiring electrode 6 occurs. Changing the type of aluminum leads to a decrease in conductivity and an increase in cost. Further, the increase in the size of the bolt 71 has a problem that the semiconductor device becomes larger.
この発明は、上記のような課題を解決するためになされたものであり、その第一の目的としては、締結強度や電気的絶縁性能の低下あるいは電気抵抗の増加を招くことなく、より省スペースな半導体装置を提供するものである。また、第二の目的としては、配線電極にアルミニウムを使用した場合にも必要な締め付け力を、組み立て性の低下やアルミニウムの種類変更、ボルトのサイズアップをすることなく確実に得られる半導体装置を提供するものである。 The present invention has been made in order to solve the above-described problems, and the first object thereof is to save more space without causing a decrease in fastening strength or electrical insulation performance or an increase in electrical resistance. A semiconductor device is provided. A second purpose is to provide a semiconductor device that can reliably obtain the necessary tightening force even when aluminum is used for the wiring electrode without lowering assembly, changing the type of aluminum, or increasing the size of the bolt. It is to provide.
この発明に係わる半導体装置は、半導体素子が実装され外部と接続するための接続端子が設けられた半導体モジュールと、前記半導体モジュールの前記接続端子に接続される配線電極と、前記配線電極の裏面に当接されたナットと、前記半導体モジュールの前記接続端子を前記ナットに螺合して前記配線電極に固定するボルトとを有する半導体装置において、前記配線電極裏面の前記ナットが当接する当接面に凹形状部を設け、前記凹形状部に前記ナットの一部が入り込んで配置されたものである。 A semiconductor device according to the present invention includes a semiconductor module on which a semiconductor element is mounted and provided with a connection terminal for connection to the outside, a wiring electrode connected to the connection terminal of the semiconductor module, and a back surface of the wiring electrode In a semiconductor device having an abutted nut and a bolt for screwing the connection terminal of the semiconductor module to the nut and fixing the connecting terminal to the wiring electrode, the abutting surface on the back surface of the wiring electrode is in contact with the nut A concave shape portion is provided, and a part of the nut is inserted into the concave shape portion.
この発明に係わる半導体装置によれば、スペース効率に優れ、電極の確実な締結が得られる半導体装置を得ることができる。 According to the semiconductor device according to the present invention, it is possible to obtain a semiconductor device that is excellent in space efficiency and that can securely fasten the electrodes.
実施の形態１．
以下、この発明の実施の形態１を図１および図２に基づいて説明するが、各図において、同一、または相当部材、部位については同一符号を付して説明する。図１はこの発明の実施の形態１に係わる半導体装置を示す平面図である。図２はこの発明の実施の形態１に係わる半導体装置を示す要部断面図である。
Embodiment 1 FIG.
Hereinafter, Embodiment 1 of the present invention will be described with reference to FIG. 1 and FIG. 2, and in each of the drawings, the same or equivalent members and parts will be described with the same reference numerals. 1 is a plan view showing a semiconductor device according to Embodiment 1 of the present invention. FIG. 2 is a cross-sectional view showing a principal part of the semiconductor device according to the first embodiment of the present invention.
これら各図において、冷却装置１には例えば複数の半導体モジュール２，３，４と、複数の配線電極６１，６２，６３，６４，６５がインサート成形された樹脂ケース５１が取り付けられている。半導体モジュール２，３，４はこの実施の形態においてはＩＧＢＴを用いている場合を示しているが、これに限定されるものではなくＭＯＳＦＥＴ等他の半導体素子を用いた場合も同様である。 In each of these drawings, for example, a plurality of semiconductor modules 2, 3, 4 and a resin case 51 in which a plurality of wiring electrodes 61, 62, 63, 64, 65 are insert-molded are attached to the cooling device 1. In this embodiment, the semiconductor modules 2, 3, and 4 show a case where an IGBT is used. However, the present invention is not limited to this, and the same applies when another semiconductor element such as a MOSFET is used.
半導体モジュール２は、その接続端子２１が配線電極６３にボルト７７によって取り付けられ、接続端子２２が配線電極６１にボルト７１によって取り付けられ、接続端子２３が配線電極６２にボルト７２によって取り付けられている。半導体モジュール３は、その接続端子３１が配線電極６４にボルト７８によって取り付けられ、接続端子３２が配線電極６１にボルト７３によって取り付けられ、接続端子３３が配線電極６２にボルト７４によって取り付けられている。半導体モジュール４は、その接続端子４１が配線電極６５にボルト７９によって取り付けられ、接続端子４２が配線電極６１にボルト７５によって取り付けられ、接続端子４３が配線電極６２にボルト７６によって取り付けられている。配線電極６１，６２，６３，６４，６５には銅あるいはアルミニウムが通常用いられる。なお、図１においては図示していないが、各ボルトを締結するためのナットは配線電極６１，６２，６３，６４，６５の裏面に当接され配線電極６１，６２，６３，６４，６５と共に樹脂ケース５１にインサート成形されている。 In the semiconductor module 2, the connection terminal 21 is attached to the wiring electrode 63 by a bolt 77, the connection terminal 22 is attached to the wiring electrode 61 by a bolt 71, and the connection terminal 23 is attached to the wiring electrode 62 by a bolt 72. In the semiconductor module 3, the connection terminal 31 is attached to the wiring electrode 64 by a bolt 78, the connection terminal 32 is attached to the wiring electrode 61 by a bolt 73, and the connection terminal 33 is attached to the wiring electrode 62 by a bolt 74. In the semiconductor module 4, the connection terminal 41 is attached to the wiring electrode 65 by a bolt 79, the connection terminal 42 is attached to the wiring electrode 61 by a bolt 75, and the connection terminal 43 is attached to the wiring electrode 62 by a bolt 76. Copper or aluminum is usually used for the wiring electrodes 61, 62, 63, 64, 65. Although not shown in FIG. 1, a nut for fastening each bolt is brought into contact with the back surface of the wiring electrodes 61, 62, 63, 64, 65 and together with the wiring electrodes 61, 62, 63, 64, 65. The resin case 51 is insert-molded.
図２は半導体モジュール２の接続端子２２の締結部を示す要部断面図である。例えば半導体モジュール２の接続端子２２は、配線電極６１裏面の前記ナット８が当接する当接面に設けられた凹形状部６６にナット８の一部が入り込んで配置されたナット８にボルト７１を螺合して配線電極６１と共に締結されている。配線電極６１と配線電極６１に設けられた凹形状部６６に一部が入り込んで配置されたナット８とは樹脂ケース５１にインサート成形されている。配線電極６１はナット８との当接部周辺に例えばプレス加工によって凹形状部６６を設けた場合を示しており、ナット８はその一部が凹形状部６６に入り込む構成となっている。これにより、従来の構成に比べて凹形状部の深さ分だけ省スペース化が可能となる。 FIG. 2 is a cross-sectional view of a principal part showing a fastening portion of the connection terminal 22 of the semiconductor module 2. For example, the connection terminal 22 of the semiconductor module 2 is configured such that the bolt 71 is attached to the nut 8 in which a part of the nut 8 is placed in the concave portion 66 provided on the contact surface with which the nut 8 contacts the back surface of the wiring electrode 61. Screwed together and fastened together with the wiring electrode 61. The wiring electrode 61 and the nut 8 partially disposed in the recessed portion 66 provided on the wiring electrode 61 are insert-molded in the resin case 51. The wiring electrode 61 shows a case where a concave portion 66 is provided around the contact portion with the nut 8 by, for example, pressing, and the nut 8 is configured such that a part of the nut 8 enters the concave portion 66. As a result, space can be saved by the depth of the concave portion as compared with the conventional configuration.
半導体モジュール２の接続端子２２との接触面は凹形状部６６の範囲より大きくとってあるため凹形状部６６による電気抵抗の増加はない。配線電極６１の凹形状部６６は切削加工によっても形成できるが、プレス加工によって形成すれば加工硬化が得られ、ボルト締め付け時の変形を抑えることができる。配線電極６１にアルミニウムを用いた場合は配線電極６１の凹形状部６６の深さを変更することで、ボルト締結時のクリープによる締め付け力の低下を調整することができる。 Since the contact surface of the semiconductor module 2 with the connection terminal 22 is larger than the range of the concave portion 66, there is no increase in electrical resistance due to the concave portion 66. The concave portion 66 of the wiring electrode 61 can be formed by cutting, but if formed by pressing, work hardening can be obtained and deformation at the time of bolt tightening can be suppressed. When aluminum is used for the wiring electrode 61, the reduction of the tightening force due to creep during bolt fastening can be adjusted by changing the depth of the concave portion 66 of the wiring electrode 61.
以上は半導体モジュール２の接続端子２２と配線電極６１とをボルト７１および配線電極６１の凹形状部６６に一部が入り込んだナット８によって締結する場合について述べたが、半導体モジュール２の接続端子２３と配線電極６２とをボルト７２および配線電極６２の凹形状部６６に一部が入り込んだナット８（図示せず）によって締結する場合、半導体モジュール２の接続端子２１と配線電極６３とをボルト７７および配線電極６３の凹形状部６６に一部が入り込んだナット８（図示せず）によって締結する場合も同様に締結される。また、半導体モジュール３の接続端子３１と配線電極６４との締結はボルト７８および配線電極６４の凹形状部６６に一部が入り込んだナット８（図示せず）によって同様に締結され、半導体モジュール３の接続端子３２と配線電極６１との締結はボルト７３および配線電極６１の凹形状部６６に一部が入り込んだナット８（図示せず）によって同様に締結され、半導体モジュール３の接続端子３３と配線電極６２の締結はボルト７４および配線電極６２の凹形状部６６に一部が入り込んだナット８（図示せず）によって同様に締結される。さらに、半導体モジュール４の接続端子４１と配線電極６５との締結はボルト７９および配線電極６５の凹形状部６６に一部が入り込んだナット８（図示せず）によって同様に締結され、半導体モジュール４の接続端子４２と配線電極６１との締結はボルト７５および配線電極６１の凹形状部６６に一部が入り込んだナット８（図示せず）によって同様に締結され、半導体モジュール４の接続端子４３と配線電極６２との締結はボルト７６および配線電極６２の凹形状部６６に一部が入り込んだナット８（図示せず）によって同様に締結される。 Although the connection terminal 22 and the wiring electrode 61 of the semiconductor module 2 are fastened with the bolts 71 and the nuts 8 partially inserted into the concave shape portions 66 of the wiring electrode 61, the connection terminal 23 of the semiconductor module 2 is described above. And the wiring electrode 62 are fastened by a bolt 72 and a nut 8 (not shown) partially inserted into the concave portion 66 of the wiring electrode 62, the connection terminal 21 of the semiconductor module 2 and the wiring electrode 63 are connected to the bolt 77. When the nut 8 (not shown) partially entering the recessed portion 66 of the wiring electrode 63 is used, the fastening is performed in the same manner. Further, the connection terminal 31 of the semiconductor module 3 and the wiring electrode 64 are fastened in the same manner by a bolt 78 and a nut 8 (not shown) partially inserted into the concave portion 66 of the wiring electrode 64. The connection terminal 32 and the wiring electrode 61 are fastened in the same manner by a bolt 73 and a nut 8 (not shown) partially inserted into the concave portion 66 of the wiring electrode 61. The wiring electrode 62 is fastened in the same manner by a bolt 74 and a nut 8 (not shown) partially entering the concave portion 66 of the wiring electrode 62. Further, the connection terminal 41 of the semiconductor module 4 and the wiring electrode 65 are fastened in the same manner by a bolt 79 and a nut 8 (not shown) partially inserted into the concave portion 66 of the wiring electrode 65. The connection terminal 42 and the wiring electrode 61 are fastened in the same manner by a bolt 75 and a nut 8 (not shown) partially inserted into the concave portion 66 of the wiring electrode 61, and the connection terminal 43 of the semiconductor module 4. Fastening with the wiring electrode 62 is similarly fastened by a bolt 76 and a nut 8 (not shown) partially entering the concave portion 66 of the wiring electrode 62.
以上のように構成されたこの実施の形態１によれば、上述した従来の構成に比べて、配線電極の凹形状部にナットを入れ込んだ分の厚みを減らすことができ、省スペース化を達成できる。また、ナットの厚みやモールドの厚みは上述した従来の構成と変わらないため、締結強度や電気的絶縁性能を損なうことはない。電気抵抗についても、半導体モジュールの接続端子と配線電極の接触部までの断面積は上述した従来の構成と変化はないため、電気抵抗は増加することはない。 According to the first embodiment configured as described above, it is possible to reduce the thickness by inserting the nut into the concave shape portion of the wiring electrode as compared with the above-described conventional configuration, thereby saving space. Can be achieved. Moreover, since the thickness of a nut and the thickness of a mold are the same as the conventional structure mentioned above, fastening strength and electrical insulation performance are not impaired. Regarding the electrical resistance, the cross-sectional area from the connection terminal of the semiconductor module to the contact portion of the wiring electrode is not changed from the conventional configuration described above, and therefore the electrical resistance does not increase.
また、配線電極にアルミニウムを用いた場合には凹形状部をプレス加工にて成形し、加工硬化により締結部の強度を向上させクリープを回避することができる。また、凹形状部の深さを変更することによりクリープ現象によるボルトの締め付け力の低下量を調整することができ、必要な締め付け力を確実に得ることができる。より確実に締め付け力を維持させるため、初期の締め付け力を上げる場合でも配線電極の変形を抑えることができる。 In addition, when aluminum is used for the wiring electrode, the concave portion can be formed by press working, and the strength of the fastening portion can be improved by work hardening to avoid creep. Further, by changing the depth of the concave portion, the amount of decrease in the bolt tightening force due to the creep phenomenon can be adjusted, and the necessary tightening force can be reliably obtained. Since the tightening force is more reliably maintained, the deformation of the wiring electrode can be suppressed even when the initial tightening force is increased.
実施の形態２．
上述した実施の形態１は、半導体装置内の半導体モジュールの接続端子と配線電極の締結部について説明したが、この発明の実施の形態２は半導体装置と半導体装置外の電気回路の締結部にも適用することができ、半導体装置内部に実施した場合と同様に装置の小型化と電極の確実な締結が得られる。以下に半導体装置外の電気回路の接合部に適用した場合の形態を説明する。
Embodiment 2. FIG.
In the first embodiment described above, the connection portion between the connection terminal and the wiring electrode of the semiconductor module in the semiconductor device has been described. However, the second embodiment of the present invention also applies to the fastening portion between the semiconductor device and the electric circuit outside the semiconductor device. As in the case of implementation inside a semiconductor device, the device can be downsized and the electrodes can be securely fastened. In the following, an embodiment in which the present invention is applied to a junction of an electric circuit outside the semiconductor device will be described.
図３にこの発明の実施の形態２における半導体装置および半導体装置外の電気回路接合部を示す。
半導体装置の配線電極６１に外部電気回路の接続端子８１がボルト１０１によって取り付けられ、配線電極６２に外部接続端子８２がボルト１０２によって取り付けられ、配線電極６３に外部接続端子８３がボルト１０３によって取り付けられ、配線電極６４に外部接続端子８４がボルト１０４によって取り付けられ、配線電極６５には外部接続端子８５がボルト１０５によって取り付けられている。なお、図３には図示していないが、各ボルトを締結するためのナットは配線電極６１，６２，６３，６４，６５の裏面に当接され、配線電極６１，６２，６３，６４，６５と共に樹脂ケース５１にインサート成型されている。
FIG. 3 shows a semiconductor device and an electric circuit junction outside the semiconductor device according to the second embodiment of the present invention.
The connection terminal 81 of the external electric circuit is attached to the wiring electrode 61 of the semiconductor device by the bolt 101, the external connection terminal 82 is attached to the wiring electrode 62 by the bolt 102, and the external connection terminal 83 is attached to the wiring electrode 63 by the bolt 103. The external connection terminals 84 are attached to the wiring electrodes 64 with bolts 104, and the external connection terminals 85 are attached to the wiring electrodes 65 with bolts 105. Although not shown in FIG. 3, nuts for fastening the bolts are in contact with the back surfaces of the wiring electrodes 61, 62, 63, 64, 65, and the wiring electrodes 61, 62, 63, 64, 65 are in contact with each other. In addition, the resin case 51 is insert-molded.
図４は配線電極６１と半導体装置外部回路の接続端子８１の締結部を示す要部断面図である。例えば接続端子８１は、配線電極６１裏面の前記ナット８が当接する当接面に設けられた凹形状部６６にナット８の一部が入り込んで配置されたナット８にボルト１０１を螺合して配線電極６１と共に締結されている。配線電極６１と配線電極６１に設けられた凹形状部６６に一部が入り込んで配置されたナット８とは樹脂ケース５１にインサート成形されている。配線電極６１はナット８との当接部周辺に例えばプレス加工によって凹形状部６６を設けた場合を示しており、ナット８はその一部が凹形状部６６に入り込む構成となっている。これにより、従来の構成に比べて凹形状部の深さ分だけ省スペース化が可能となる。 FIG. 4 is a cross-sectional view of a principal part showing a fastening portion between the wiring electrode 61 and the connection terminal 81 of the semiconductor device external circuit. For example, the connection terminal 81 is formed by screwing a bolt 101 into a nut 8 that is arranged with a part of the nut 8 entering a concave portion 66 provided on a contact surface with which the nut 8 contacts the back surface of the wiring electrode 61. Fastened together with the wiring electrode 61. The wiring electrode 61 and the nut 8 partially disposed in the recessed portion 66 provided on the wiring electrode 61 are insert-molded in the resin case 51. The wiring electrode 61 shows a case where a concave portion 66 is provided around the contact portion with the nut 8 by, for example, pressing, and the nut 8 is configured such that a part of the nut 8 enters the concave portion 66. As a result, space can be saved by the depth of the concave portion as compared with the conventional configuration.
外部接続端子８１との接触面は凹形状部６６の範囲より大きくとってあるため凹形状部６６による電気抵抗の増加はない。配線電極６１の凹形状部６６は切削加工によっても形成できるが、プレス加工によって形成すれば加工硬化が得られ、ボルト締め付け時の変形を抑えることができる。配線電極６１にアルミニウムを用いた場合は配線電極６１の凹形状部６６の深さを変更することで、ボルト締結時のクリープによる締め付け力の低下を調整することができる。 Since the contact surface with the external connection terminal 81 is larger than the range of the concave portion 66, the electrical resistance is not increased by the concave portion 66. The concave portion 66 of the wiring electrode 61 can be formed by cutting, but if formed by pressing, work hardening can be obtained and deformation at the time of bolt tightening can be suppressed. When aluminum is used for the wiring electrode 61, the reduction of the tightening force due to creep during bolt fastening can be adjusted by changing the depth of the concave portion 66 of the wiring electrode 61.
以上は外部接続端子８１と配線電極６１とをボルト１０１および配線電極６１の凹形状部６６に一部が入り込んだナット８によって締結する場合について述べたが、外部接続端子８２と配線電極６２とをボルト１０２および配線電極６２の凹形状部６６に一部が入り込んだナット８(図示せず)によって締結する場合、外部接続端子８３と配線電極６３とをボルト１０３および配線電極６３の凹形状部６６に一部が入り込んだナット８(図示せず)によって締結する場合、外部接続端子８４と配線電極６４とをボルト１０４および配線電極６４の凹形状部６６に一部が入り込んだナット８(図示せず)によって締結する場合、外部接続端子８５と配線電極６５とをボルト１０５および配線電極６５の凹形状部６６に一部が入り込んだナット８(図示せず)によって締結する場合も同様に締結される。 The above describes the case where the external connection terminal 81 and the wiring electrode 61 are fastened by the bolt 101 and the nut 8 partially inserted into the concave portion 66 of the wiring electrode 61. However, the external connection terminal 82 and the wiring electrode 62 are connected to each other. When fastening by the nut 8 (not shown) partially entering the concave shape portion 66 of the bolt 102 and the wiring electrode 62, the external connection terminal 83 and the wiring electrode 63 are connected to the concave shape portion 66 of the bolt 103 and the wiring electrode 63. When the nut 8 (not shown) with a part thereof is fastened, the external connection terminal 84 and the wiring electrode 64 are connected to the bolt 104 and the concave part 66 of the wiring electrode 64 with a nut 8 (not shown). The external connection terminal 85 and the wiring electrode 65 are partly inserted into the bolt 105 and the concave portion 66 of the wiring electrode 65 (not shown). ) Is also concluded in the same manner.
なお、この発明は、その発明の範囲内において、各実施の形態を自由に組み合わせたり、各実施の形態を適宜、変形、省略することが可能である。 It should be noted that within the scope of the present invention, the embodiments can be freely combined, or the embodiments can be appropriately modified or omitted.
この発明は、スペース効率に優れ、電極の確実な締結が得られる半導体装置の実現に好適である。 The present invention is suitable for the realization of a semiconductor device that is excellent in space efficiency and in which secure fastening of electrodes can be obtained.
１ 冷却装置、２ 半導体モジュール、３ 半導体モジュール、４ 半導体モジュール、８ ナット、２１ 接続端子、２２ 接続端子、２３ 接続端子、３１ 接続端子、３２ 接続端子、３３ 接続端子、４１ 接続端子、４２ 接続端子、４３ 接続端子、５１ 樹脂ケース、６１ 配線電極、６２ 配線電極、６３ 配線電極、６４ 配線電極、６５ 配線電極、６６ 凹形状部、７１ ボルト、７２ ボルト、７３ ボルト、７４ ボルト、７５ ボルト、７６ ボルト、７７ ボルト、７８ ボルト、７９ ボルト、８１ 外部接続端子、８２ 外部接続端子、８３ 外部接続端子、８４ 外部接続端子、８５ 外部接続端子、１０１ ボルト、１０２ ボルト、１０３ ボルト、１０４ ボルト、１０５ボルト。
DESCRIPTION OF SYMBOLS 1 Cooling device, 2 Semiconductor module, 3 Semiconductor module, 4 Semiconductor module, 8 Nut, 21 Connection terminal, 22 Connection terminal, 23 Connection terminal, 31 Connection terminal, 32 Connection terminal, 33 Connection terminal, 41 Connection terminal, 42 Connection terminal , 43 Connection terminal, 51 Resin case, 61 Wiring electrode, 62 Wiring electrode, 63 Wiring electrode, 64 Wiring electrode, 65 Wiring electrode, 66 Concave part, 71 volts, 72 volts, 73 volts, 74 volts, 75 volts, 76 Bolt, 77 Volt, 78 Volt, 79 Volt, 81 External Connection Terminal, 82 External Connection Terminal, 83 External Connection Terminal, 84 External Connection Terminal, 85 External Connection Terminal, 101 Volt, 102 Volt, 103 Volt, 104 Volt, 105 Volt .
Claims (3)
The semiconductor device according to claim 1, wherein the wiring electrode and the nut are insert-molded in a resin case.
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| JP2004134569A (en) * | 2002-10-10 | 2004-04-30 | Mitsubishi Electric Corp | Semiconductor device for electric power |
| JP2005277012A (en) * | 2004-03-24 | 2005-10-06 | Mitsubishi Electric Corp | Power semiconductor device and manufacturing method therefor |
| JP2012134300A (en) * | 2010-12-21 | 2012-07-12 | Mitsubishi Electric Corp | Semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2004134569A (en) * | 2002-10-10 | 2004-04-30 | Mitsubishi Electric Corp | Semiconductor device for electric power |
| JP2005277012A (en) * | 2004-03-24 | 2005-10-06 | Mitsubishi Electric Corp | Power semiconductor device and manufacturing method therefor |
| JP2012134300A (en) * | 2010-12-21 | 2012-07-12 | Mitsubishi Electric Corp | Semiconductor device |
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