JP2014072271A5 - - Google Patents

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JP2014072271A5
JP2014072271A5 JP2012215555A JP2012215555A JP2014072271A5 JP 2014072271 A5 JP2014072271 A5 JP 2014072271A5 JP 2012215555 A JP2012215555 A JP 2012215555A JP 2012215555 A JP2012215555 A JP 2012215555A JP 2014072271 A5 JP2014072271 A5 JP 2014072271A5
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Prior art keywords
les
chip
heat sink
dielectric film
flexible
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JP2012215555A
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JP2014072271A (en
JP6030905B2 (en
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Claims (8)

ヒートシンク（１４）と、
前記ヒートシンク（１４）上にマウントされ、前記ヒートシンク（１４）に電気的に接続されたＬＥＳチップ（１２）のアレイであって、各ＬＥＳチップ（１２）は、表面および裏面を備え、前記表面が受け取った電力に応じて光を放出するように構成された発光領域（３２）を含み且つ前記表面および前記裏面のうちの少なくとも一方がその上に接続パッド（２８）を含む、ＬＥＳチップ（１２）のアレイと、
前記ＬＥＳチップ（１２）のアレイの制御された動作を行うために各ＬＥＳチップ（１２）上に設置され且つ電気的に接続された柔軟な相互配線構造（１８）であって、前記柔軟な相互配線構造（１８）が、
前記ヒートシンク（１４）の形状に合うように構成された柔軟な誘電体膜（２４）と、
前記柔軟な誘電体膜（２４）上に形成された金属相互配線構造（２２）であり、前記金属相互配線構造（２２）が前記ＬＥＳチップ（１２）の前記接続パッド（２８）への直接の金属接続部および電気的接続部を形成するように前記柔軟な誘電体膜（２４）を貫通して形成されたビア（２６）を通って延びる、金属相互配線構造（２２）と、
を備えた、柔軟な相互配線構造（１８）と、
を備え、
前記ヒートシンク（１４）は、前記ヒートシンク（１４）上にマウントされた前記ＬＥＳチップ（１２）のアレイが３６０度の領域全体にわたって光を放出するように設置されるように円形の形状を有するように作られる、
発光半導体（ＬＥＳ）デバイス（１０）。 A heat sink (14);
An array of LES chips (12) mounted on the heat sink (14) and electrically connected to the heat sink (14), each LES chip (12) comprising a front surface and a back surface, A LES chip (12) including a light emitting region (32) configured to emit light in response to received power and at least one of the front and back surfaces including a connection pad (28) thereon An array of
A flexible interconnect structure (18) installed on and electrically connected to each LES chip (12) for performing controlled operation of the array of LES chips (12), comprising: The wiring structure (18)
A flexible dielectric film (24) configured to match the shape of the heat sink (14);
A metal interconnection structure (22) formed on the flexible dielectric film (24), wherein the metal interconnection structure (22) is directly connected to the connection pad (28) of the LES chip (12). A metal interconnect structure (22) extending through a via (26) formed through the flexible dielectric film (24) to form a metal connection and an electrical connection;
A flexible interconnect structure (18) with
With
The heat sink (14) has a circular shape so that the array of LES chips (12) mounted on the heat sink (14) is placed to emit light over a 360 degree region. Made,
Light emitting semiconductor (LES) device (10). 前記金属相互配線構造（２２）が、各個々のＬＥＳチップの前記発光領域（３２）の位置に対応する開口部（３０）を含むようにパターニングされる、請求項１に記載のＬＥＳデバイス（１０）。   The LES device (10) of claim 1, wherein the metal interconnect structure (22) is patterned to include an opening (30) corresponding to the location of the light emitting region (32) of each individual LES chip. ). 前記ヒートシンク（１４）が、前記ＬＥＳデバイス（１０）中のアノード接続部またはカソード接続部として機能するように構成される、請求項１に記載のＬＥＳデバイス（１０）。   The LES device (10) of claim 1, wherein the heat sink (14) is configured to function as an anode connection or a cathode connection in the LES device (10). 前記柔軟な誘電体膜（２４）が、各個々のＬＥＳチップの前記発光領域（３２）の位置に対応して前記柔軟な誘電体膜（２４）中に形成された複数の開口部（３０）を含む、請求項１に記載のＬＥＳデバイス（１０）。   A plurality of openings (30) in which the flexible dielectric film (24) is formed in the flexible dielectric film (24) corresponding to the position of the light emitting region (32) of each individual LES chip. The LES device (10) of claim 1, comprising: 前記柔軟な誘電体膜（２４）は、各個々のＬＥＳチップの前記発光領域（３２）から放出された光が通過することを可能にするように構成された透明膜を含む、請求項１に記載のＬＥＳデバイス（１０）。   The flexible dielectric film (24) comprises a transparent film configured to allow light emitted from the light emitting region (32) of each individual LES chip to pass through. The LES device (10) described. 前記接続パッド（２８）が、前記ＬＥＳチップ（１２）の前記表面上に形成され、前記柔軟な相互配線構造（１８）が、前記ＬＥＳチップ（１２）の前記表面上に設置される、請求項１に記載のＬＥＳデバイス（１０）。   The connection pads (28) are formed on the surface of the LES chip (12) and the flexible interconnect structure (18) is placed on the surface of the LES chip (12). The LES device according to claim 1 (10). 前記金属相互配線構造（２２）が、外側表面上にコーティングされた反射膜（３４）を備え、前記反射膜（３４）が、前記ＬＥＳデバイス（１０）の反射を最大にし且つ光学的損失を減少させるために前記金属相互配線構造（２２）のスペクトル反射率を増加させるように構成される、請求項１に記載のＬＥＳデバイス（１０）。   The metal interconnect structure (22) comprises a reflective film (34) coated on the outer surface, the reflective film (34) maximizing reflection of the LES device (10) and reducing optical loss. The LES device (10) of claim 1, wherein the LES device (10) is configured to increase a spectral reflectivity of the metal interconnect structure (22) to achieve. ヒートシンク（１４）と、
前記ヒートシンク（１４）上にマウントされ、前記ヒートシンク（１４）に電気的に接続されたＬＥＳチップ（１２）のアレイであって、各ＬＥＳチップ（１２）は、表面および裏面を備え、前記表面が受け取った電力に応じて光を放出するように構成された発光領域（３２）を含み且つ前記表面および前記裏面のうちの少なくとも一方がその上に接続パッド（２８）を含む、ＬＥＳチップ（１２）のアレイと、
前記ＬＥＳチップ（１２）のアレイの制御された動作を行うために各ＬＥＳチップ（１２）上に設置され且つ電気的に接続された柔軟な相互配線構造（１８）であって、前記柔軟な相互配線構造（１８）が、
前記ヒートシンク（１４）の形状に合うように構成された柔軟な誘電体膜（２４）と、
前記柔軟な誘電体膜（２４）上に形成された金属相互配線構造（２２）であり、前記金属相互配線構造（２２）が前記ＬＥＳチップ（１２）の前記接続パッド（２８）への直接の金属接続部および電気的接続部を形成するように前記柔軟な誘電体膜（２４）を貫通して形成されたビア（２６）を通って延びる、金属相互配線構造（２２）と、
を備えた、柔軟な相互配線構造（１８）と、
を備え、
前記接続パッド（２８）が、前記ＬＥＳチップ（１２）の前記裏面上に形成され、前記柔軟な相互配線構造（１８）が、前記ＬＥＳチップ（１２）の前記裏面上に設置され、前記金属相互配線構造（２２）が、前記ＬＥＳチップ（１２）および前記ヒートシンク（１４）を電気的に接続し且つ前記ＬＥＳチップ（１２）と前記ヒートシンク（１４）との間にヒートスプレッダを備える、
ＬＥＳデバイス（１０）。
A heat sink (14);
An array of LES chips (12) mounted on the heat sink (14) and electrically connected to the heat sink (14), each LES chip (12) comprising a front surface and a back surface, A LES chip (12) including a light emitting region (32) configured to emit light in response to received power and at least one of the front and back surfaces including a connection pad (28) thereon An array of
A flexible interconnect structure (18) installed on and electrically connected to each LES chip (12) for performing controlled operation of the array of LES chips (12), comprising: The wiring structure (18)
A flexible dielectric film (24) configured to match the shape of the heat sink (14);
A metal interconnection structure (22) formed on the flexible dielectric film (24), wherein the metal interconnection structure (22) is directly connected to the connection pad (28) of the LES chip (12). A metal interconnect structure (22) extending through a via (26) formed through the flexible dielectric film (24) to form a metal connection and an electrical connection;
A flexible interconnect structure (18) with
With
The connection pads (28) are formed on the back surface of the LES chip (12), the flexible interconnection structure (18) is installed on the back surface of the LES chip (12), and the metal mutual A wiring structure (22) electrically connects the LES chip (12) and the heat sink (14) and includes a heat spreader between the LES chip (12) and the heat sink (14).
LES device (10).
JP2012215555A 2012-09-28 2012-09-28 Overlay circuit structure for interconnecting light emitting semiconductors Active JP6030905B2 (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
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JP2014072271A JP2014072271A (en) 2014-04-21
JP2014072271A5 true JP2014072271A5 (en) 2015-11-05
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US20080154214A1 (en) 2006-12-22 2008-06-26 Medrad, Inc. Flow Based Pressure Isolation and Fluid Delivery System Including Flow Based Pressure Isolation
US7771383B2 (en) 2004-10-22 2010-08-10 Medegen, Inc. Fluid control device with valve and methods of use

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DE19922176C2 (en) * 1999-05-12 2001-11-15 Osram Opto Semiconductors Gmbh Surface-mounted LED multiple arrangement and its use in a lighting device
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