JP2014065928A - Vapor deposition mask manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a vapor deposition mask that can be made highly fine and light even when it is made large.SOLUTION: A method for manufacturing a vapor deposition mask formed by laminating a metallic mask with a slit and a resin mask with an opening corresponding to a vapor deposition manufactured pattern comprises the steps of: preparing a laminate on which a support, a metal layer that can be exfoliated from the support, and a resin layer are sequentially laminated; forming the metallic mask with the slit on the resin layer by precipitating metal using a plating method; forming the resin mask on the resin layer by forming the opening corresponding to the vapor deposition manufactured pattern and overlaid on the slit provided on the metallic mask; forming a through hole corresponding to the opening on the metal layer; and exfoliating the support from the metal layer on which the through hole is formed.

Description

  The present invention relates to a method for manufacturing a vapor deposition mask.

  Conventionally, in the manufacture of an organic EL element, the organic layer or cathode electrode of the organic EL element is formed of, for example, a metal in which a large number of minute slits are arranged in parallel at minute intervals in a region to be deposited. A vapor deposition mask was used. When using this vapor deposition mask, the vapor deposition mask is placed on the surface of the substrate to be vapor-deposited and held by a magnet from the back side, but the rigidity of the slit is extremely small, so when holding the vapor deposition mask on the substrate surface In this case, the slits are easily distorted, which has been an obstacle to the increase in the size of products with high definition or a long slit length.

  Various studies have been made on the vapor deposition mask for preventing the distortion of the slit. For example, Patent Document 1 covers a base plate that also serves as a first metal mask having a plurality of openings, and covers the openings. There has been proposed a vapor deposition mask having a second metal mask having a large number of fine slits in the region and a mask tension holding means for positioning the second metal mask on the base plate in a state where the second metal mask is pulled in the longitudinal direction of the slit. That is, a vapor deposition mask in which two kinds of metal masks are combined has been proposed. According to this vapor deposition mask, it is said that the slit accuracy can be ensured without causing distortion in the slit.

  Recently, with the increase in size of products using organic EL elements or the increase in substrate size, there is an increasing demand for deposition masks, which are used in the manufacture of deposition masks made of metal. Metal plates are also getting bigger. However, with the current metal processing technology, it is difficult to accurately form a fine pattern on a large metal plate, and it is possible to prevent distortion of the slit portion by the method proposed in Patent Document 1 above. However, it cannot cope with high definition. In addition, in the case of a vapor deposition mask made of only metal, the mass increases with the increase in size, and the total mass including the frame also increases, which hinders handling.

JP 2003-332057 A

  This invention is made | formed in view of such a situation, and makes it a main subject to provide the manufacturing method of the vapor deposition mask which can satisfy | fill both high definition and weight reduction, even when it enlarges.

  In order to solve the above problems, the present invention comprises a laminate of a metal mask provided with a slit and a resin mask provided on the surface of the metal mask and provided with an opening corresponding to a pattern to be deposited. A method of manufacturing a vapor deposition mask, comprising: preparing a laminate in which a support, a metal layer releasably provided from the support, and a resin layer are laminated in this order; and on the resin layer A step of forming a metal mask provided with slits by depositing metal using a plating method, and the slit provided on the metal mask corresponding to a pattern to be deposited on the resin layer, and Forming a resin mask by forming overlapping openings, forming a through hole corresponding to the opening in the metal layer, and removing the support from the metal layer in which the through hole is formed. Peeling And that step, characterized in that it comprises a.

  The metal layer provided between the support and the resin layer may be a metal layer formed by a silver mirror reaction.

  Further, the step of forming the through hole may be a step of forming the through hole using a laser processing method. Further, the step of forming the through hole may be a step of forming the through hole using a photolithography method.

  According to the vapor deposition mask manufacturing method of the present invention, it is possible to manufacture a vapor deposition mask that can satisfy both high definition and light weight even when the size is increased.

It is process drawing for demonstrating the manufacturing method of the vapor deposition mask of this invention. It is a front view which shows an example of the vapor deposition mask manufactured with the manufacturing method of this invention, and is the front view seen from the metal mask side. It is a schematic sectional drawing which shows an example of the process of forming a resin mask. It is a schematic sectional drawing which shows the relationship between a shadow and the thickness of a metal mask.

  Below, the manufacturing method of the vapor deposition mask of this invention is demonstrated concretely using drawing. FIG. 1 is a process diagram for explaining a method of manufacturing a vapor deposition mask according to the present invention. Note that (a) to (f) are all cross-sectional views.

(Process of preparing a laminate)
In this step, as shown in FIG. 1A, a support 5, a metal layer 4 detachably provided from the support 3, and a resin layer 20 are stacked in this order. Is a step of preparing

<Support>
The metal layer 4 and the resin layer 20 constituting the laminate 5 have a thickness of about several μm to several tens of μm. Therefore, when the one in which the metal layer 4 and the resin layer 20 are simply laminated without using the support 3 is used, the strength of the metal layer 4 and the resin layer 20 is insufficient, and the manufacturing process, for example, during transportation The metal layer 4 and the resin layer 20 may be bent or broken.

  Therefore, in this step, in order to prevent the metal layer 4 and the resin layer 20 from being bent or broken, a laminate 5 in which the support 3, the metal layer 4, and the resin layer 20 are laminated in this order is used. By using the said support body, a vapor deposition mask can be manufactured without producing a bending and a fracture | rupture in this metal layer 4 or the resin layer 20 at the time of conveyance during a manufacturing process, for example. In addition, the support body 3 will peel from the metal layer 4 in which the through-hole 32 was provided in the future. Therefore, the support 3 is not included in the vapor deposition mask 100 obtained by the manufacturing method of the present invention.

  There is no particular limitation on the material constituting the support 3, and any material may be used as long as the metal layer 4 and the resin layer 20 are given a strength that does not cause bending or fracture. For example, the material of the support 3 includes polyesters such as polyethylene terephthalate and polyethylene naphthalate, stretched or unstretched films of plastics such as polypropylene, polycarbonate, cellulose acetate, polyethylene derivatives, polyamide and polymethylpentene, fine paper, and coated paper. Art paper, cast coated paper, paperboard, glass substrate and the like.

  The thickness of the support 3 is not particularly limited. However, when the thickness of the support 3 is thinner than the thickness of the metal layer 4 or the resin layer 20, the laminated body 5 may not be given strength. . Therefore, the thickness of the support 3 is preferably greater than at least the thickness of the metal layer 4 or the resin layer 20, and more preferably greater than the total thickness of the metal layer 4 and the resin layer 20. A preferable thickness is, for example, about 20 μm to 200 μm.

<Resin layer>
In the future, the resin layer 20 that constitutes the stacked body 5 is a layer that is provided with an opening 50 corresponding to a pattern to be vapor-deposited and becomes the resin mask 25 that constitutes the vapor-deposition mask 100. The resin material constituting the resin layer 20 has a property that enables high-definition processing as compared with a metal material. Therefore, according to the vapor deposition mask manufacturing method of the present invention, it is possible to provide a high-definition opening corresponding to the pattern to be vapor-deposited in the resin layer 20, thereby producing the vapor deposition mask according to the present invention. A high-definition vapor deposition pattern can be formed on a vapor deposition object (hereinafter sometimes simply referred to as a “work object”). In addition, the pattern produced by vapor deposition in the present specification means a pattern to be produced using the vapor deposition mask of the present invention. For example, when the vapor deposition mask is used for forming an organic layer of an organic EL element, The vapor deposition pattern is the shape of the organic layer.

  The vapor deposition mask manufactured by the method for manufacturing a vapor deposition mask of the present invention has a configuration in which the metal mask 15 provided with the slit 16 and the resin mask 25 provided with the opening 50 are combined. Here, when comparing the mass of the vapor deposition mask 100 manufactured by the manufacturing method of the present invention with the mass of the vapor deposition mask composed of only a conventionally known metal, assuming that the thickness of the entire vapor deposition mask is the same. The mass of the vapor deposition mask 100 manufactured by the manufacturing method of the present invention is reduced by the amount in which a part of the metal material of the conventionally known vapor deposition mask is replaced with a resin material. In addition, in order to reduce the weight by using a vapor deposition mask made of only metal, it is necessary to reduce the thickness of the vapor deposition mask. However, if the vapor deposition mask is thin, When the size is increased, the vapor deposition mask may be distorted or the durability may be reduced. On the other hand, according to the manufacturing method of the present invention, even when the thickness of the entire vapor deposition mask is increased in order to satisfy the distortion and the durability when it is enlarged, due to the presence of the resin mask 25, It is possible to manufacture a vapor deposition mask that can be made lighter than a vapor deposition mask formed of only metal.

  The material of the resin layer 20 is not particularly limited, but a high-definition opening 50 can be formed by a laser processing method or an etching processing method, and a lightweight material with a small dimensional change rate and moisture absorption rate over time and heat. It is preferable to use it. Examples of such materials include polyimide resin, polyamide resin, polyamideimide resin, polyester resin, polyethylene resin, polyvinyl alcohol resin, polypropylene resin, polycarbonate resin, polystyrene resin, polyacrylonitrile resin, ethylene vinyl acetate copolymer resin, ethylene- Examples thereof include vinyl alcohol copolymer resin, ethylene-methacrylic acid copolymer resin, polyvinyl chloride resin, polyvinylidene chloride resin, cellophane, and ionomer resin. Among the materials exemplified above, a resin material having a thermal expansion coefficient of 16 ppm / ° C. or less is preferable, a resin material having a moisture absorption rate of 1.0% or less is preferable, and a resin material having both conditions is particularly preferable. .

  The thickness of the resin layer 20 is not particularly limited, but the resin layer 20 will be a resin mask 25 in the future. Then, when vapor deposition is performed using the vapor deposition mask obtained by the manufacturing method of the present invention, a vapor deposition portion that is insufficient for the pattern to be vapor-deposited, that is, a vapor deposition portion that is thinner than the target vapor deposition thickness, In order to prevent so-called shadows from occurring, the resin layer 20 is preferably as thin as possible. However, depending on the thickness of the metal mask 15, when the thickness of the resin layer 20 is less than 3 μm, defects such as pinholes are likely to occur. On the other hand, if it exceeds 25 μm, shadows may occur. Considering this point, the thickness of the resin layer 20 is preferably 3 μm or more and 25 μm or less. By setting the thickness of the resin layer 20 within this range, it is possible to reduce the risk of occurrence of defects such as pinholes and to effectively prevent the occurrence of shadows.

  The shadow referred to in the specification of the present application is insufficient for the pattern formed on the deposition object when the deposition pattern is formed on the deposition object using the deposition mask manufactured by the manufacturing method of the present invention. This refers to a phenomenon in which an evaporating part is formed, that is, an evaporating part having a film thickness smaller than the intended film thickness.

<Metal layer>
In the future, the metal layer 4 constituting the stacked body 5 is a layer that is provided with a through hole 32 corresponding to the opening 50 and constitutes the vapor deposition mask 100 obtained by the manufacturing method of the present invention.

  The vapor deposition mask 100 obtained by the manufacturing method of the present invention is such that the surface of the resin mask 25 on the vapor deposition object side is covered with the metal layer 4, so that when the vapor deposition is performed using the vapor deposition mask 100, the resin mask The release of outgas that can be generated from 25 is prevented. That is, the metal layer 4 constituting the stacked body 5 is a layer that serves as a barrier layer in the vapor deposition mask 100.

  The material of the metal layer 4 should just contain a metal element, and there is no limitation in particular about the material. Metal element oxides and nitrides, for example, oxides such as silicon, aluminum, and magnesium, and nitrides can be suitably used as the material of the metal layer 4 in terms of excellent gas barrier properties. In addition, since the metal layer 4 is a layer containing a metal element, the surface of the resin mask 25 is exposed regardless of the material of the metal layer 4, that is, the surface of the resin mask 25 is a metal. Needless to say, the gas barrier property is excellent as compared with the case where the layer 4 is not covered.

  There is no limitation in particular about the thickness of the metal layer 4, What is necessary is just a thickness which can express gas-barrier property. For example, the metal layer 4 having a thickness of about 0.05 μm to 5 μm is preferable in that the gas barrier property is high and the processing performance of the through hole 32 described later is excellent.

  The metal layer 4 is provided so as to be peelable from the support 3. As a method for providing the metal layer 4 so as to be peelable from the support 3, various conventionally known methods can be used, and the method for forming the laminate 5 is not particularly limited. For example, the laminated body 5 in which the support 3 can be peeled from the metal layer 4 can be formed by the method exemplified below.

(Method for forming laminate (1))
A 1st formation method is a method of forming the laminated body 5 containing the metal layer 4 provided so that peeling from the support body 3 was carried out using a silver mirror reaction. Specifically, the support 3 and the resin layer 20 that are provided at an interval that is the thickness of the metal layer 4 are immersed in, for example, an aqueous ammoniacal silver nitrate solution, thereby allowing the support 3 and the resin to be immersed. In this method, the layered body 5 is in close contact with the layer 20 through the metal layer 4 as a silver plating layer. This method is preferable in that the laminate 5 can be formed in one step. In this case, masking or the like is performed on the surface of the support 3 that is not in contact with the resin layer 20 or the surface of the resin layer 20 that is not in contact with the support 3, and other than between the support 3 and the resin layer 20. It is preferable to prevent the metal layer 4 from being formed.

  In order to make the metal layer 4 formed by the silver mirror reaction peelable from the support 3, in the laminate 5, the metal layer 4 and the resin layer 20 rather than the adhesion between the metal layer 4 and the support 3. It is necessary to increase the adhesive strength with. There is no particular limitation on the method for making the relationship of the adhesive force in this way, and examples thereof include a method of performing a pretreatment on the surface of the resin layer 20 on the side in contact with the metal layer 4 before performing the silver mirror reaction. . Examples of the pretreatment include plasma treatment, surface pretreatment for controlling the surface tension of the resin layer 20 by corona treatment, and a method for roughening the surface of the resin layer 20 using blasting or the like. . In addition, in the state which does not perform such a pre-processing, when the adhesiveness of the metal layer 4 and the resin layer 20 is higher than the adhesive force of the metal layer 4 and the support body 3, the said process is unnecessary. .

(Method for forming laminate (2))
In the second forming method, a joined body is formed by joining the metal layer 4 and the resin layer 20, and then the support 3 is peeled from the metal layer 4 on the metal layer 4 of the joined body. It is a method of forming.

  The joined body obtained by joining the metal layer 4 and the resin layer 20 is obtained by joining a sheet containing the material of the resin layer 20 exemplified above on the metal layer 4 via an adhesive layer or an adhesive layer, or bonding. It can form by the method etc. which fuse | melt the sheet | seat containing the material of the resin layer 20 illustrated above on the metal layer 4, without interposing an agent layer or an adhesive layer. The joined body can also be formed by forming the metal layer 4 on the resin layer 20 by sputtering, ion plating, vacuum deposition, various CVD methods, or the like. A sputtering method, an ion plating method, a vacuum deposition method, and various CVD methods are preferable in that a thin metal layer 4 having a high gas barrier property can be formed on the resin layer 20.

  As a method of joining the metal layer 4 and the support 3 of the joined body formed as described above so that the support 3 can be peeled from the metal layer 4, there is a method between the joined body and the support 3. The method of providing the peeling layer which has the function which can make the support body 3 peel from this joined body is mentioned.

  The release layer has a function of bonding the bonded body and the support 3 together, and has a function of weakening the adhesion between the support 3 and the release layer under a predetermined condition so that the support 3 can be peeled from the bonded body. I just need it. For example, a material whose adhesive strength is weakened by irradiating ultraviolet rays, a material whose adhesive strength is weakened by a temperature load above a predetermined temperature, a material whose adhesive strength is weakened by cooling to a predetermined temperature or lower, or a material that is immersed in a specific solvent. A material that weakens the force can be used. Examples of the material whose adhesive strength is weakened by irradiating with ultraviolet rays include a UV release sheet. Examples of the material whose adhesive force is weakened by a temperature load higher than a predetermined value include wax, a temperature-sensitive adhesive sheet, and the like.

  In addition, natural rubber-based pressure-sensitive adhesives and the like can also be used. These natural rubber-based pressure-sensitive adhesives can exhibit pressure-sensitive adhesiveness by performing pressure treatment, and the pressure-sensitive adhesive part can be peeled off manually after pressure-sensitive adhesive.

  In addition, when this peeling layer peels a support body from the metal layer 4, it does not remain | survive on the joined body side but it is desirable to peel with the support body 3. FIG. This is because if the release layer remains on the joined body side, outgas may be generated from the release layer. Therefore, in the case where a release layer is provided, considering this point, the metal layer 4 and the support are made so that the adhesion between the metal layer 4 and the release layer is weaker than the adhesion between the support and the release layer. It is necessary to select material 3 as appropriate.

(Method for forming laminate (3))
The third forming method is a method of providing the metal layer 4 on the support 3 and then providing the resin layer 20 on the metal layer 4 so that the support 3 can be peeled from the metal layer 4. As a method of joining the support 3 and the metal layer 4 so that the support 3 can be peeled from the metal layer 4, for example, the release layer described above may be provided.

  As a method for providing the resin layer 20 on the metal layer 4, various methods described in the method for forming a laminate (2) can be used.

(Process to form a metal mask)
In this step, as shown in FIG. 1B, a catalyst layer 12 containing an electroless plating catalyst is formed at a predetermined position on the resin layer 20, and then the catalyst layer 12 is formed using a plating solution. In this step, the electroless plating is selectively deposited and grown to form a metal mask 15 provided with slits 16 on the resin layer 20 as shown in FIG.

  The catalyst layer 12 containing an electroless plating catalyst contains an electroless plating catalyst and a binder resin on a predetermined region on the resin layer 20, specifically, in a region where plating is deposited and grown by a plating method. It is a layer formed by coating and drying a coating liquid.

  The electroless plating catalyst means a nucleus capable of selectively depositing and growing the electroless plating. As the electroless plating catalyst, for example, noble metal colloidal particles or the like can be used. Examples of the noble metal colloidal particles include fine particles of palladium, gold, silver, platinum and the like.

  Examples of the binder resin include urethane resins such as two-component curable urethane resins, resins composed of one or more of epoxy resins, acrylic resins, alkyd resins, polyester resins, and the like.

  As a solution for performing electroless plating, an electroless plating solution such as copper, iron, nickel, chromium, silver, gold, platinum, and cobalt can be used. In the electroless plating, by setting the plating conditions unique to each electroless plating solution, a metal or alloy is deposited and grown on the catalyst layer 12 to form the metal mask 15 having the slits 16.

  In order to improve the adhesion of plating, the step of cleaning the laminate 5 may be performed before this step. As a cleaning method, conventionally known cleaning methods such as solvent cleaning, alkali cleaning, electrolytic cleaning, and acid cleaning can be appropriately selected and used.

  As shown in FIGS. 2A and 2B, the metal mask 15 formed in this step is a resin when the vapor deposition mask 100 obtained by the manufacturing method of the present invention is viewed from the front of the metal mask 15. The slits 16 extending in the vertical direction or the horizontal direction are arranged at positions where all the openings 50 provided in the mask 25 can be seen.

  There is no particular limitation on the width W of the slit 16 included in the metal mask 15 formed in this step, but it was designed to be shorter than the pitch between the openings 50 included in the resin mask 25 formed in the step described later. It is preferable. Specifically, as shown in FIG. 2A, when the slit 16 extends in the vertical direction, the horizontal width W of the slit 16 is shorter than the pitch P1 of the openings 50 adjacent in the horizontal direction. It is preferable to do. Similarly, although not shown, when the slit 16 extends in the horizontal direction, the vertical width of the slit 16 is preferably shorter than the pitch P2 of the openings 50 adjacent in the vertical direction. On the other hand, the length L in the vertical direction when the slit 16 extends in the vertical direction is not particularly limited, and the vertical length of the metal mask 15 and the opening 50 provided in the resin mask 25 are not limited. What is necessary is just to design suitably according to a position. The width W of the slit 16 included in the metal mask 15 means the opening dimension of the side of the metal mask 15 that is not in contact with the resin mask 25, in other words, the side of the metal mask 15 where the resin mask 25 is not provided. .

  Further, as shown in FIG. 2B, when the slit 16 extends in the vertical direction, two or more openings 50 overlapping the slit 16 may be provided in the horizontal direction. Further, the slits extending in the vertical direction or the horizontal direction may be arranged in a plurality of rows as shown in FIG. 2, or only one row may be arranged. In the form shown in FIG. 2, a plurality of openings 50 are provided as openings 50 overlapping with one slit 16, but there is only one opening 50 provided at a position overlapping with one slit 16. As shown in FIG. 2, there may be a plurality in the vertical direction or the horizontal direction.

  Therefore, when forming the metal mask 15 by the plating method, it is preferable to form the catalyst layer 12 so that the width of the slit 16 and the formation position thereof are within the above ranges.

  The thickness of the metal mask 15 formed in this step is not particularly limited, but the thickness is preferably about 5 μm to 100 μm. Considering prevention of shadow during vapor deposition, the metal plate 10 is preferably thin. However, if it is thinner than 1 μm, the risk of breakage and deformation increases and handling may be difficult. However, in the manufacturing method of the present invention, since the metal mask 15 is formed using the laminate 5 including the support 3, even if the thickness of the metal mask 15 is as thin as 1 μm, the handling performance is improved. Excellent and can reduce the risk of breakage and deformation. It is not preferable that the thickness is greater than 100 μm because shadows may occur. Considering these points, the thickness of the metal mask 15 is preferably about 5 μm or more and 50 μm or less. Hereinafter, the relationship between the shadow and the thickness of the metal mask 15 will be described with reference to FIG.

  As shown in FIG. 4A, when the thickness of the metal mask 15 is thin, the vapor deposition material released from the vapor deposition source toward the vapor deposition target is the inner wall surface of the slit 16 of the metal mask 15 or the metal mask. It passes through the slit 16 of the metal mask 15 and the opening 50 of the resin mask 25 without colliding with the surface on the side where the resin mask 25 is not provided. Thereby, it becomes possible to form a vapor deposition pattern with a uniform film thickness on the vapor deposition object. That is, the occurrence of shadows can be prevented. On the other hand, as shown in FIG. 4B, when the thickness of the metal mask 15 is thick, for example, when the thickness of the metal mask 15 exceeds 100 μm, a part of the vapor deposition material released from the vapor deposition source. Cannot collide with the inner wall surface of the slit 16 of the metal mask 15 or the surface of the metal mask 15 where the resin mask 25 is not formed, and cannot reach the deposition target. The more the vapor deposition material that cannot reach the vapor deposition object, the more easily a shadow is generated in which an undeposited portion having a thickness smaller than the target vapor deposition film thickness is generated on the vapor deposition object.

  In order to sufficiently prevent the generation of shadows, it is preferable that the cross-sectional shape of the slit 16 is a shape that expands toward the vapor deposition source, as shown in FIG. With such a cross-sectional shape, even if the thickness of the metal mask 15 is made relatively large for the purpose of preventing distortion that may occur in the vapor deposition mask 100 or improving durability, it is emitted from the vapor deposition source. The deposited material can reach the deposition object without colliding with the surface of the slit 16 or the inner wall surface. As a result, the occurrence of shadows can be more effectively prevented. FIG. 4 is a partial schematic cross-sectional view for explaining the relationship between the generation of shadows and the slits 16 of the metal mask 15.

  Therefore, when forming the metal mask 15 by the plating method, it is preferable to appropriately set the plating solution to be used, the plating time, and the like so that the thickness is within the above preferable range. In addition, as described above, the cross-sectional shape of the slit 16 is preferably a cross-sectional shape that expands toward the vapor deposition source side as shown in FIG. For example, in the region corresponding to the slit 16 provided in the metal mask on the resin layer, in other words, in the region where the plating is not deposited / grown, a tapered insulating layer that narrows toward the deposition source side is provided. Thus, the slit 16 having the cross-sectional shape shown in FIG. 4C can be formed.

(Process for forming a resin mask)
In this step, the resin mask is formed by forming, in the resin layer 20, an opening 50 corresponding to the pattern to be deposited and overlapping the slit 16 provided in the metal mask 15. In this step, as shown in FIG. 1D, a resin mask 25 in which an opening 50 is formed in the resin layer 20 is obtained. FIG. 1D is a schematic cross-sectional view showing an example of the resin mask 25 in which the opening 50 is formed by an etching method.

  There is no particular limitation on the method for forming in the resin layer 20 openings 50 (hereinafter simply referred to as openings) corresponding to the pattern to be deposited. For example, the opening 50 may be formed by a laser processing method, or the opening 50 may be formed by an etching method.

  For example, as shown in FIG. 3A, the laser processing method uses a laser beam on the resin layer 20 in a region corresponding to the opening size of the opening 50 from the side where the metal layer 4 of the resin layer 20 is not provided. The opening 50 is formed while removing the resin layer 20 in the region. Thereby, the resin mask 25 in which the opening 50 is provided in the resin layer 20 by the laser processing method is formed. Further, the laser processing method is preferable in that the through hole 32 can be simultaneously formed in the metal layer 4 while the opening 50 is formed in the resin layer 20. That is, according to the laser processing method, the step of forming the resin mask 25 in this step and the step of forming the through hole 32 described later can be performed simultaneously.

  The laser device used in the present embodiment is not particularly limited, and a conventionally known laser device may be used.

  For example, as shown in FIG. 3B, the etching process is performed by applying a resist material on the resin layer 20 in the slit 16 and using a mask having an opening shape for forming the opening 50. The resist material is masked, exposed and developed to form a resist pattern 31. Then, using the resist pattern 31 as an etching resistant mask, the resin layer 20 is etched to form the opening 50, and then the resist pattern is cleaned and removed.

  Although there is no particular limitation on the resist material, it is preferable to use a resist material having good processability and desired resolution. The resist material used when forming the opening 50 by the etching method may be a positive resist material or a negative resist material. As the positive resist material, OFPR800, TFR-H, TFR-790, etc., manufactured by Tokyo Ohka Kogyo Co., Ltd. can be used. In the etching method described here, a resist pattern is formed using a positive resist material, but a resist pattern may be formed using a negative resist material. Further, the developing solution for forming the resist pattern is not particularly limited as long as it can remove the resist material in the exposed region. For example, when resist material OFPR800 manufactured by Tokyo Ohka Kogyo Co., Ltd. is used as the resist material, NMD-3 manufactured by Tokyo Ohka Kogyo Co., Ltd. is used as the developer, so that the resist material in the exposed region is used. Can be removed.

  There is no limitation on the etching material for etching the resin layer 20 as long as the material of the resin layer 20 can be etched. For example, when a polyimide resin is used as the resin layer 20, an alkaline aqueous solution in which sodium hydroxide is dissolved, hydrazine, or the like can be used as an etching material. Commercially available etching materials can be used as they are, and TPE3000 manufactured by Toray Engineering Co., Ltd. can be used as the polyimide resin etching material.

  There is no particular limitation on the cross-sectional shape of the opening 50 included in the resin mask 25 formed in this step, and the end faces of the resin mask forming the opening 50 may be substantially parallel to each other, but FIG. ), The opening 50 is preferably shaped so that its cross-sectional shape expands toward the vapor deposition source. The angle formed between the bottom end of the bottom 50 of the resin mask 25 and the straight line connecting the top end of the top of the resin mask 25 and the bottom of the resin mask 25 is in the range of 25 ° to 65 °. preferable. In particular, within this range, an angle smaller than the vapor deposition angle of the vapor deposition machine to be used is preferable. By setting the cross-sectional shape of the opening 50 to such a cross-sectional shape, the vapor deposition material released from the vapor deposition source can reach the vapor deposition target without colliding with the inner wall surface of the opening 50. Can do. Thereby, shadows can be effectively prevented. As will be described below, according to the laser processing method or the etching processing method, the cross-sectional shape of the opening 50 can be a cross-sectional shape that expands toward the vapor deposition source side.

  The etching method has a property that the etching amount in the width direction decreases toward the traveling direction of the etching material, in other words, toward the etching depth direction. Therefore, by performing etching from the side of the resin layer 20 where the metal layer 4 is not provided, the cross-sectional shape of the opening 50 formed is toward the metal mask 15 as shown in FIG. In other words, the cross-sectional shape becomes wider toward the vapor deposition source side. In the present specification, the opening 50 corresponding to the pattern to be deposited means the opening size of the opening 50 on the metal layer 4 side. Therefore, in forming the resist pattern 31 for forming the opening 50, it is necessary to appropriately set a mask, an etching material to be used, and the like in consideration of this point.

  In FIG. 3A, the inner wall surfaces facing each other of the opening 50 are substantially parallel to each other. However, in the present invention in which the laser beam is irradiated from the side where the metal layer 4 of the resin layer 20 is not provided, the energy of the laser beam. By utilizing this attenuation, the cross-sectional shape of the opening 50 can be a shape that expands toward the deposition source side. In addition to this, the cross-sectional shape of the opening 50 can be changed to a cross-sectional shape that expands toward the metal mask 15 side by performing a process that narrows the laser light irradiation region stepwise.

  In FIG. 1D, the end surface forming the opening 50 has a linear shape, but is not limited to this, and has an outwardly convex curved shape. The overall shape may be a bowl shape.

  In the above embodiment, the opening 50 is formed using the resist pattern as an etching resistant mask. For example, as shown in FIG. 3C, the opening 50 is formed in the step of forming the metal mask. The opening may be formed in the resin layer 20 using the metal mask itself as an anti-etching mask.

  According to this method, the resin mask 25 in which the opening 50 is formed in the resin layer 20 can be obtained without forming a resist pattern, which is advantageous in terms of the process. Moreover, in the manufacturing method of this invention, since the metal mask 15 is formed using a plating method, the slit 16 of the metal mask 15 can be formed with high definition. Therefore, even when the metal mask 15 itself is used as an etching resistant mask, the high-definition opening 50 can be formed. In this case, in the step of forming the metal mask 15, the metal deposited by the plating method as appropriate so that the opening size of the opening 50 on the resin layer 4 side becomes the opening size corresponding to the pattern to be deposited. In other words, it is necessary to set a region where the slit 16 is provided.

(Process for forming through holes)
In this step, as shown in FIG. 1E, the through hole 32 corresponding to the opening 50 is formed in the metal layer 4.

  The method for forming the through hole is not particularly limited, and the through hole 32 may be formed by a laser processing method, or the through hole 32 may be formed by using an etching method.

  When the through hole 32 is formed by a laser processing method, the through hole 32 may be formed at the same time as the opening 50. After the opening 50 is formed, laser light is irradiated through the opening 50. The through hole 32 may be formed.

  When the through holes 32 are formed by an etching method, the metal layer 4 may be etched using an etching material that can etch the metal layer 4 using the resin mask 25 as an etching resistant mask.

  In addition, since the metal layer 4 plays a role as a barrier layer in the vapor deposition mask 100 obtained by the manufacturing method of the present invention, the preferable thickness thereof is compared with the metal mask 15 and the resin mask 25 as described above. It is very thin. Therefore, the opening size of the through hole 32 is substantially the same as the opening size of the opening 50 on the metal layer 4 side.

(Step of peeling the support)
In this step, the support 3 is peeled from the metal layer 4 in which the through holes 32 are formed. According to this step, as shown in FIG. 1 (f), the metal layer 4 provided with the through hole 32, the resin mask 25 provided with the opening 50, and the metal mask 15 provided with the slit 16 are arranged in this order. The vapor deposition mask 100 laminated | stacked by this is obtained.

  Since the support body 3 is provided so as to be peelable from the metal layer 4 as described in the laminate 5, the support body 3 is supported by performing a peeling process according to the bonding mode of the support body 3 and the metal layer 4. The body 3 can be peeled from the metal layer 4. For example, the support 3 may be peeled off by peeling the support 3 by hand. When the support 3 is peeled off under predetermined conditions, the support 3 is given with predetermined conditions. Can be peeled off.

  According to the manufacturing method of the present invention described above, the high-definition metal mask 15 is formed by plating, and the opening of the resin mask 25 is formed on the surface of the resin mask 25 where the metal mask 15 is not provided. Since the resin layer 4 provided with the through-hole 32 corresponding to the portion 50 is formed, outgassing from the resin mask 25 is performed when vapor deposition is performed using the vapor deposition mask 100 obtained by the manufacturing method of the present invention. Can be prevented.

  The manufacturing method of the present invention has been described above. However, the manufacturing method of the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention. In the above-described embodiment, the case where the slit 16 and the opening 50 have a shape extending toward the vapor deposition source has been mainly described, but the slit 16 and the opening 50 are formed so that the cross-sectional shapes thereof are substantially parallel. It may be. Moreover, shapes other than this may be sufficient.

  Further, when vapor deposition is performed on a substrate such as an organic EL substrate using the vapor deposition mask 100 manufactured by the manufacturing method of the present invention, a magnet or the like is disposed behind the substrate to attract the vapor deposition mask 100 in front of the substrate by magnetic force. In other words, when it is necessary to fix the vapor deposition mask 100 and the substrate, it is preferable that either one or both of the metal mask 15 and the metal layer 4 have magnetism. . Even if one or both of the metal mask 15 and the metal layer 4 have magnetism, if these layers are thin, the magnetism should be sufficiently exerted. May not be possible. Therefore, in such a case, it is preferable to further provide a magnetic layer having magnetism on the metal layer 4. By providing the magnetic layer, the magnetism of the vapor deposition mask 100 as a whole can be improved, and the vapor deposition mask 100 and the substrate can be fixed with sufficient strength. The thickness of the magnetic layer is not particularly limited, but if it is less than 5 μm, sufficient magnetism may not be exhibited, and therefore the thickness of the magnetic layer is preferably 5 μm or more. On the other hand, if the thickness of the magnetic layer becomes too thick, there is a concern about the generation of shadows. Therefore, the thickness of the magnetic layer is set in consideration of the thickness of the resin mask 25, the metal mask 15, the metal layer 4, and the like. It is preferable to determine.

  In the above, the method of fixing the vapor deposition mask 100 and the substrate using a magnet or the like has been described. For example, when the vapor deposition mask 100 and the substrate are fixed using a method such as electrostatic adsorption, a metal is used. The mask 15 and the metal layer 4 need not have magnetism.

  The application of the vapor deposition mask produced by the production method of the present invention described above is not limited, but is a field where a high-definition vapor deposition film is required, for example, an organic layer of an organic EL element or a cathode electrode. It is suitable as a vapor deposition mask used for applications such as formation of organic semiconductors.

DESCRIPTION OF SYMBOLS 100 ... Deposition mask 3 ... Support body 4 ... Metal layer 5 ... Laminate body 12 ... Catalyst layer 15 ... Metal mask 16 ... Slit 20 ... Resin layer 25 ... Resin mask 30 ... resist material 31 ... resist pattern 32 ... through hole 50 ... opening

Claims (4)

A method for producing a vapor deposition mask in which a metal mask provided with a slit and a resin mask provided with an opening corresponding to a pattern to be produced by vapor deposition are laminated,
Preparing a laminate in which a support, a metal layer provided so as to be peelable from the support, and a resin layer are laminated in this order;
Forming a metal mask provided with slits on the resin layer by depositing metal using a plating method;
Forming a resin mask in the resin layer by forming an opening corresponding to the pattern to be deposited and overlapping the slit provided in the metal mask;
Forming a through hole corresponding to the opening in the metal layer;
And a step of peeling the support from the metal layer in which the through-holes are formed.   The method for producing a vapor deposition mask according to claim 1, wherein the metal layer provided between the support and the resin layer is a metal layer formed by a silver mirror reaction. Forming the through-hole,
The method for producing a vapor deposition mask according to claim 1, wherein the through hole is formed using a laser processing method. Forming the through-hole,
The method for producing a vapor deposition mask according to claim 1, wherein the through hole is formed using an etching method.

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