JP2014063934A - Substrate processing apparatus and semiconductor manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To easily set delicate control against a rotational mechanism without using an extra step of a recipe.SOLUTION: A substrate processing apparatus according to the present embodiment comprises: a processing chamber including a loading part for loading at least a plurality of substrates and a plurality of rooms for performing preset plurality of types of processing on the substrate, respectively; and control means for executing a recipe composed of a plurality of processing steps in which preset processing conditions are set for processing on the substrate, and based on the processing conditions, rotating the loading part to move the substrates loaded on the loading part to the plurality of rooms, respectively for performing processing corresponding to each substrate on each substrate in each of the plurality of rooms.

Description

  The present invention relates to a substrate processing apparatus and a semiconductor manufacturing method.

Substrate processing in the substrate processing apparatus is performed in accordance with a recipe indicating a substrate processing procedure and control settings for each mechanism of the substrate processing apparatus.
The substrate in the process chamber of the substrate processing apparatus is moved in the process chamber by the rotation control of the rotation mechanism of the process chamber according to the recipe, and the substrate is processed.
In the substrate processing in the process chamber as described above, when the substrate processing is repeated by rotating the substrate, the number of steps to be set increases, which may increase the burden on the recipe setter.

  An object of the present invention is to provide a substrate processing apparatus capable of easily setting fine control over a rotating mechanism without using extra recipe steps.

  In order to achieve the above object, a substrate processing apparatus according to the present invention includes a mounting unit that mounts at least a plurality of substrates, and a plurality of predetermined types of processing performed on the substrates. A processing chamber composed of a chamber, and a recipe composed of a plurality of processing stages in which predetermined processing conditions are set for the processing of the substrate, and based on the processing conditions, A control means for controlling the substrate to move to each of the plurality of rooms and to perform a corresponding process in each of the plurality of rooms by rotating the substrate and moving the substrate placed on the placement unit to each of the plurality of rooms And have.

  In addition, a semiconductor manufacturing method according to the present invention includes a placement unit for placing at least a plurality of substrates, and a plurality of rooms for performing a plurality of types of predetermined processes on the substrates. In a semiconductor manufacturing apparatus having a processing chamber, a recipe composed of a plurality of processing stages in which predetermined processing conditions are set for the processing of the substrate is executed, and the placement unit described above based on the processing conditions , And the substrate placed on the placement unit is moved to each of the plurality of rooms, and the substrate is controlled to perform a corresponding process in each of the plurality of rooms. Manufacture devices.

  According to the substrate processing apparatus of the present invention, it is possible to finely control the rotation mechanism, and thus it is possible to repeatedly perform substrate processing in each room while rotating the substrate.

It is a figure which illustrates the composition of the 1st substrate processing device. It is a figure which illustrates the structure of the process chamber of the 1st substrate processing apparatus shown in FIG. (A) is a figure which illustrates the structure of a recipe, (B) is a sequence diagram which illustrates the operation | movement of rotation mechanism control. It is a figure which illustrates the control setting content in a basic recipe and a derived recipe. (A) is a figure which illustrates rotation operation | movement of the process chamber according to the derivative recipe shown in FIG. 4, (B) illustrates rotation operation | movement of the process chamber according to the basic recipe shown in FIG. FIG. It is a figure which illustrates the composition of the 2nd control controller with which the 2nd substrate processing device is provided. The content of the rotation control parameter set in the derivative recipe used by PMC shown in FIG. 6 is shown. It is a flowchart which illustrates the rotation mechanism control process according to the derivative recipe which PCM shown in FIG. 6 uses. It is a sequence diagram which illustrates the operation | movement of rotation mechanism control.

[Background of the invention]
Hereinafter, prior to the description of the second substrate processing apparatus 2 according to the embodiment of the present invention, the first substrate processing apparatus 1 is shown to explain the background of the present invention in order to help understanding thereof. To do.

[Substrate Processing Apparatus 1]
FIG. 1 is a diagram illustrating the configuration of the first substrate processing apparatus 1.
As shown in FIG. 1, the substrate processing apparatus 1 is divided into a vacuum side and an atmospheric side and is stored in a recipe (substrate processing procedure and substrate) stored in a storage unit (not shown) of the first controller 10. Various processing is performed on the substrate in accordance with control settings for each mechanism of the processing apparatus 1.

On the vacuum side of the substrate processing apparatus 1, a vacuum transfer chamber 120 that can be hermetically sealed, load lock chambers 122-1 and 122-2 as spare chambers, and a process chamber 126 as a processing chamber for processing a plurality of substrates 124 at once. -1,126-2 are provided.
The load lock chambers 122-1 and 122-2 and the process chambers 126-1 and 126-2 are disposed so as to surround the outer periphery of the vacuum transfer chamber 120.

The vacuum transfer chamber 120 has a load lock chamber structure that can withstand a pressure (negative force) less than atmospheric pressure such as a vacuum state.
The housing of the vacuum transfer chamber 120 has a pentagonal shape in plan view and is formed in a box shape with the upper and lower ends closed.

A vacuum robot 128 is installed in the vacuum transfer chamber 120 as a transfer means.
The vacuum robot 128 carries the substrate 124 between the load lock chambers 122-1 and 122-2 and the process chambers 126-1 and 126-2 on the two arms serving as substrate placement units. .
Further, the vacuum robot 128 is configured to be able to move up and down while maintaining the airtightness of the vacuum transfer chamber 120.
Further, each of the two arms can be expanded and contracted in the horizontal direction, and can be rotated and moved within the horizontal plane.

The process chambers 126-1 and 126-2 include, for example, substrate mounting tables 130-1 to 130-5 and 130-6 to 130-10 on which the substrate 124 is mounted, respectively, and five substrates 124 at a time. It is configured as a multi-leaf processing chamber for processing.
The process chambers 126-1 and 126-2 are connected to the vacuum transfer chamber 120 via gate valves 132-1 and 132-2 as on-off valves, respectively.
That is, when the gate valves 132-1 and 132-2 are opened, the substrate 124 is transferred to the vacuum transfer chamber 120 under reduced pressure.
The detailed configuration and operation of the process chambers 126-1 and 126-2 will be described later with reference to FIG.

The load lock chambers 122-1 and 122-2 function as a spare chamber for loading the substrate 124 into the vacuum transfer chamber 120 or a spare chamber for unloading the substrate 124 from the vacuum transfer chamber 120.
In addition, buffer stages 134-1 and 134-2 as substrate placement portions that temporarily support the substrate 124 when the substrate 124 is carried in and out of the load lock chambers 122-1 and 122-2, respectively. is set up.
The load lock chambers 122-1 and 122-2 are connected to the vacuum transfer chamber 120 via gate valves 136-1 and 136-2 as on-off valves.
The load lock chambers 122-1 and 122-2 are connected to an atmospheric transfer chamber 140 described later via gate valves 138-1 and 138-2 serving as on-off valves.

That is, when the gate valves 136-1 and 138-2 on the atmospheric transfer chamber 140 side are opened in a state where the gate valves 136-1, 136-2 on the vacuum transfer chamber 120 side are closed, the inside of the vacuum transfer chamber 120 is opened. The substrate 124 is transported between the load lock chambers 122-1 and 122-2 and the atmospheric transport chamber 140 under atmospheric pressure while maintaining vacuum airtightness.
Moreover, the load lock chambers 122-1 and 122-2 have a load lock chamber structure that can withstand a pressure (negative force) less than atmospheric pressure such as a vacuum state, and the inside thereof can be evacuated.
That is, after the gate valves 138-1 and 138-2 on the atmospheric transfer chamber 140 side are closed and the inside of the load lock chambers 122-1 and 122-2 is evacuated, the gate valve 136 on the vacuum transfer chamber 120 side is evacuated. 1 and 136-2 are opened, the substrate 124 is maintained under reduced pressure between the load lock chambers 122-1 and 122-2 and the vacuum transfer chamber 120 in a state where the vacuum state in the vacuum transfer chamber 120 is maintained. Is transported.

On the atmosphere side of the substrate processing apparatus 1, there are an atmosphere transfer chamber 140 that is a front module connected to the load lock chambers 122-1 and 122-2, and a load port as a substrate housing portion connected to the atmosphere transfer chamber 140. 142-1 and 142-2 are provided.
In the atmospheric transfer chamber 140, an atmospheric robot 144 is installed as a transfer means.
The atmospheric robot 144 carries the substrate 124 between the load lock chambers 122-1 and 122-2 and the load ports 142-1 and 142-2 on the two arms serving as the substrate placement units. To do.

In the atmospheric transfer chamber 140, an orientation flat alignment device 146 that performs alignment of the crystal orientation of the substrate 124 and the like is installed as a substrate position correction device.
When the board | substrate 124 is a notch type, the notch alignment apparatus as a board | substrate position correction apparatus may be installed.
In addition, a clean unit (not shown) that supplies clean air to the atmosphere transfer chamber 140 is installed inside the atmosphere transfer chamber 140.

The load ports 142-1 and 142-2 are configured to mount carrier cassettes 148-1 and 148-2 as storage containers for storing a plurality of substrates 124, respectively.
In the carrier cassettes 148-1 and 148-2, slots (not shown) serving as storage units for storing the substrates 124 are provided, for example, for 25 lots.
The substrate 124 placed in the load ports 142-1 and 142-2 is transferred into the substrate processing apparatus 1 and subjected to various processes under the control of the first controller 10 according to the recipe.

Hereinafter, when any one of a plurality of components such as the load lock chambers 122-1 and 122-2 is indicated, the load lock chamber 122 may be simply described.
Moreover, in each figure, the same code | symbol is attached | subjected to the substantially same component and process.
Further, the number, configuration, and combination of each chamber of the substrate processing apparatus 1 are not limited to the above-described contents, and may be appropriately selected and changed.

[Process chamber]
FIG. 2 is a diagram illustrating a more detailed configuration of the process chamber 126 shown in FIG.
As shown in FIG. 2, the process chamber 126 includes a plasma processing chamber 150 that performs plasma processing on the substrate 124, and N 2 purge (nitrogen purge) chambers 152-1 and 152-that supply an inert gas to the substrate 124. 2 and a gas precursor chamber 154 for supplying a reactive gas to the substrate 124.
The four rooms are partitioned by partitioning portions 158-1 to 158-4, and are equipped with a plasma discharge mechanism, a gas introduction mechanism, an exhaust mechanism, a temperature control mechanism (all not shown), etc. according to the function of each room. ing.

Further, as shown in FIG. 2, the process chamber 126 includes a rotation mechanism 156, and the rotation of the rotation mechanism 156 causes the substrate mounting table 130 to be changed into a plasma processing chamber 150, an N2 purge (nitrogen purge) chamber 152, and a gas precursor. Rotate to chamber 154.
Processing corresponding to the function of each room is performed on the substrate 124 mounted on the substrate mounting table 130 that rotates.

[Rotation mechanism control]
Hereinafter, the rotation mechanism control of the process chamber 126 (FIGS. 1 and 2) will be described.
FIG. 3A is a diagram illustrating the configuration of a recipe, and FIG. 3B is a diagram illustrating rotation by a process chamber controller (PMC) and a process chamber motion controller (PM (Process Module) motion controller). It is a sequence diagram which illustrates operation of mechanism control.
The PMC constitutes the first controller 10 (FIG. 1) and controls substrate processing in the process chamber 126 (FIGS. 1 and 2), and the PM controller constitutes the first controller 10 and the process The rotation mechanism 156 of the chamber 126 is controlled.

As shown in FIG. 3A, the recipe includes a plurality of steps for controlling each mechanism of the substrate processing apparatus 1 (FIG. 1).
Each step indicates, for example, the control contents for each mechanism of the pressure, temperature, mass flow controller (MFC), valve, RF (Radio Frequency), and substrate processing apparatus 1, and is used for these controls in each step. Parameter to be set.
For example, Step 2 of the recipe shown in FIG. 3A shows the rotation control of the rotation mechanism 156 of the process chamber 126 (FIGS. 1 and 2), and in Step 2, the rotation speed of the rotation mechanism 156 is the rotation control parameter. Set as

For example, as shown in FIG. 3B, in step 2, the PMC sends a rotation control command specifying a rotation speed indicated by the rotation control parameter (for example, 15 rpm (revolution per minute)) to the PM motion controller. Send.
The PM motion controller receives the rotation control command transmitted from the PMC, controls the rotation mechanism 156 (FIG. 2) to continue the rotation at the rotation speed specified in the rotation control command, and rotates the PMC. Periodic information is sent as a rotating monitor.

Further, for example, Step 3 of the recipe shown in FIG. 3A shows rotation stop control of the rotation mechanism 156 of the process chamber 126 (FIGS. 1 and 2).
As shown in FIG. 3B, in step 3, the PMC transmits a rotation stop command to the PM motion controller.
The PM motion controller receives the rotation stop command transmitted from the PMC, controls the rotation mechanism 156 to stop the rotation, and transmits a response to the rotation stop command to the PMC.

As described above, the substrate 124 placed on the substrate placing table 130 (FIG. 2) of the process chamber 126 is rotated and moved at the set rotation speed under the control of the rotation mechanism 156 according to the recipe, and is moved to each room. Then, the substrate 124 is processed.
In the following, a recipe indicating control for processing the substrate 124 in the process chamber 126 by rotating it at a specified rotational speed as described above may be referred to as a “basic recipe”.
On the other hand, in order to evaluate the basic recipe, a recipe showing a control that repeats processing by setting not only the rotation speed but also the rotation angle and rotating the target substrate 124 at the specified angle to perform the processing is derived. Sometimes referred to as “recipe”.

FIG. 4 is a diagram illustrating the control setting contents in the basic recipe and the derived recipe.
FIG. 5A is a diagram illustrating the rotation operation of the process chamber 126 according to the derivative recipe shown in FIG. 4, and FIG. 5B is a diagram illustrating the process chamber 126 according to the basic recipe shown in FIG. It is a figure which illustrates this rotation operation.

As shown in FIG. 4, the basic recipe only needs to create one step of “substrate processing and process chamber 126 rotation mechanism control”, and the rotation mechanism 156 performs control according to the basic recipe in FIG. It operates as shown in B).
On the other hand, as shown in FIG. 4, the derivative recipe generally includes a control of “rotating the rotation mechanism 156 of the process chamber 126 at a specified angle” as one step and a control of “performing substrate processing”. It is created by repeatedly setting as another step.

For example, when the angle specified in the derived recipe is 90 °, as shown in FIG. 4, for the operation of one rotation (360 °), the step indicating the rotational movement control and the substrate processing control are performed rather than the basic recipe. Each step shown is added four times.
By the control according to the derivative recipe shown in FIG. 4, the rotation mechanism 156 operates as follows (1) to (7).

(1) In step 2, the substrate 124 is processed at the position A shown in FIG.
(2) In step 3, the rotation mechanism 156 is controlled to rotate and move the substrate 124 to the position B shown in FIG.
(3) In step 4, the substrate 124 is processed at the position B shown in FIG.

(4) In step 5, the rotation mechanism 156 is controlled to rotate and move the substrate 124 to the position C shown in FIG.
(5) In step 6, the substrate 124 is processed at the position C shown in FIG.
(6) In step 7, the rotation mechanism 156 is controlled to rotate and move the substrate 124 to the position D shown in FIG.
(7) In step 8, the substrate 124 is processed at the position D shown in FIG.

Thus, by creating a derivative recipe, fine control over the rotation mechanism can be performed.
However, in order to perform recipe control for the rotation mechanism according to the present embodiment, it is necessary to use extra steps depending on the setting of the rotation operation (rotation speed, rotation angle), which increases the burden on the recipe setter. There are things to do.
The second substrate processing apparatus 2 according to the embodiment of the present invention described below has been made by the above process, and is devised so that fine control over the rotation mechanism can be easily set.

  Embodiments of the present invention will be described below.

[Substrate processing apparatus 2]
FIG. 6 is a diagram illustrating the configuration of the second controller 20 included in the second substrate processing apparatus 2 according to the embodiment of the invention.
The substrate processing apparatus 2 has a configuration in which the first controller 10 included in the substrate processing apparatus 1 (FIG. 1) is replaced with the second controller 20 shown in FIG. 6, and other configurations of the substrate processing apparatus 2 are as follows. This is the same as the substrate processing apparatus 1 (FIGS. 1 and 2).
As shown in FIG. 6, the control controller 20 is a robot controller that controls an operation unit 210, a process chamber controller (PMC) 214, a transfer system controller 218, a vacuum robot 128 (FIG. 1), and an atmospheric robot 144 (FIG. 1). 220, a PM motion controller 222 for controlling the rotation mechanism 156 (FIG. 2) of the process chamber 126 and a customer host computer 224 are connected via a switching hub 206 by a network 200 such as a LAN.

The operation unit 210 receives an operation by an operator via the display device 212 and an input / output device (not shown).
The PMC 214 and the transport system controller 218 are connected to a digital signal line 202 such as DeviceNet through valve digital I / Os 226-1 and 226-2 that control on / off of a supply gas and exhaust valve, and various switches (SW). SW digital I / Os 228-1 and 228-2 for controlling on / off of the above are connected via sequencers 230-1 and 230-2.

The PMC 214 controls substrate processing in the process chamber 126.
Specifically, a pressure controller 232 such as an auto pressure controller (APC) that controls the pressure in the process chamber 126 is connected to the PMC 214 via, for example, a serial line 204.
Also, the PMC 214 causes the storage unit 216 to store a recipe created or edited by an operator (for example, a recipe setter) via the operation unit 210, for example.

Further, the PMC 214 outputs a rotation control instruction for the rotation mechanism 156 (FIG. 2) of the process chamber 126 to the PM motion controller 222 according to the recipe stored in the storage unit 216.
Further, the PMC 214 performs various control instructions according to the recipe stored in the storage unit 216, a pressure controller 232, a mass flow controller (MFC; Mass Flow Controller) that controls the flow rate of the processing gas supplied into the process chamber 126, and processing. Outputs to a gas supply / exhaust valve, a temperature regulator, various switches (all not shown), and the like.
The transport system controller 218 outputs a control instruction for transporting the substrate 124 to the robot controller 220, various valves, various switches, and the like, and performs transport control of the substrate 124 in the substrate processing apparatus 2.

[Rotation mechanism control processing]
FIG. 7 is a diagram illustrating the contents of the rotation control parameters set in the step showing the rotation control for the rotation mechanism 156 (FIG. 2) of the derivative recipe used by the PMC 214 (FIG. 6).
FIG. 8 is a flowchart illustrating a control process (rotation mechanism control process) for the rotation mechanism 156 according to the derivative recipe used by the PMC 214.
Hereinafter, the rotation mechanism control process of the PMC 214 will be further described.

As shown in FIG. 7, in addition to the rotation speed (FIG. 3A) set as the rotation control parameter in the basic recipe, the rotation angle, the waiting time, and the rotation speed are added to the rotation control parameter in the derived recipe. The
For example, in the case where the substrate 124 is rotated 90 °, and the control for performing processing after stopping for 10 seconds is performed for three rotations, the rotation angle is “90 °” and the waiting time is “ 10 seconds "and the rotation speed is set to" 3 times ".
The rotation control parameter in the derived recipe is set or edited by a recipe setter via a parameter setting screen (not shown) displayed on the display device 212 (FIG. 6) of the operation unit 210, for example.

The PMC 214 (FIG. 6) performs the rotation mechanism control process in the following procedure shown in FIG. 8 using the rotation control parameters shown in FIG.
In step 300 (S300), the PMC 214 initializes (that is, 0 °) the cumulative rotation angle obtained by rotating the substrate 124.
In step 302 (S302), the PMC 214 transmits a rotation control command designating the rotation speed and rotation angle (FIG. 7) set as the rotation control parameters to the PM motion controller 222 (FIG. 6).

In step 304 (S304), the PMC 214 receives an operation completion notification indicating that the operation corresponding to the rotation control command transmitted in S302 is completed from the PM motion controller 222.
In step 306 (S306), the PMC 214 adds the rotation angle set by the rotation control parameter to the accumulated rotation angle.

In step 308 (S308), the PMC 214 determines whether or not the cumulative rotation angle is smaller than 360 ° × (the number of rotations set by the rotation control parameter).
If it is determined that the cumulative rotation angle is smaller than 360 ° × number of rotations, the PMC 214 proceeds to the process of S310, and otherwise the process ends.
In step 310 (S310), the PMC 214 stops operation for the waiting time set by the rotation control parameter (that is, the substrate 124 is processed in the process chamber 126 for the waiting time), and the processing of S302 is performed. move on.

[Operation example of rotating mechanism control]
FIG. 9 is a sequence diagram showing an operation example of rotation control of the rotation mechanism 156 (FIG. 2) of the process chamber 126 by the PMC 214 (FIG. 6) and the PM motion controller 222 (FIG. 6).
Hereinafter, an operation example of the rotation mechanism control shown in step 2 (FIG. 7) of the derivative recipe in the substrate processing apparatus 2 according to the embodiment of the present invention will be described.
In this description, a specific example is given in which the rotation speed of the rotation control parameter (FIG. 7) is “15 rpm”, the rotation angle is “90 °”, the waiting time is “10 seconds”, and the rotation speed is “1 time”. However, the present invention is not limited to this.

The PMC 214 initializes the cumulative rotation angle (S300; FIG. 8).
The PMC 214 transmits a rotation control command specifying a rotation speed of 15 rpm and a rotation angle of 90 ° to the PM motion controller 222 (FIG. 6) (S302).
Thereby, the PM motion controller 222 controls the rotation mechanism 156 (FIG. 2) of the process chamber 126, and the substrate 124 in the process chamber 126 is rotated 90 degrees.

The PM motion controller 222 transmits a rotation mechanism control operation completion notification to the PMC 214 (S304; FIG. 8).
The PMC 214 adds the rotation angle 90 ° to the cumulative rotation angle, and determines that the cumulative rotation angle (90 °) is smaller than 360 ° (360 ° × 1 rotation) (S306, S308).
The PMC 214 waits for a waiting time of 10 seconds (S310).

The PMC 214 transmits a rotation control command specifying a rotation speed of 15 rpm and a rotation angle of 90 ° to the PM motion controller 222 (S302; FIG. 8).
Thereby, the PM motion controller 222 controls the rotation mechanism 156 (FIG. 2) of the process chamber 126, and the substrate 124 in the process chamber 126 is further rotated 90 °.

The PM motion controller 222 transmits a rotation mechanism control operation completion notification to the PMC 214 (S304; FIG. 8).
The PMC 214 adds a rotation angle of 90 ° to the cumulative rotation angle, and determines that the cumulative rotation angle (180 °) is smaller than 360 ° (360 ° × 1 rotation) (S306, S308).
The PMC 214 waits for a waiting time of 10 seconds (S310).

The PMC 214 transmits a rotation control command specifying a rotation speed of 15 rpm and a rotation angle of 90 ° to the PM motion controller 222 (S302; FIG. 8).
Thereby, the PM motion controller 222 controls the rotation mechanism 156 (FIG. 2) of the process chamber 126, and the substrate 124 in the process chamber 126 is further rotated 90 °.

The PM motion controller 222 transmits a rotation mechanism control operation completion notification to the PMC 214 (S304; FIG. 8).
The PMC 214 adds the rotation angle 90 ° to the cumulative rotation angle, and determines that the cumulative rotation angle (270 °) is smaller than 360 ° (360 ° × 1 rotation) (S306, S308).
The PMC 214 waits for a waiting time of 10 seconds (S310).

The PMC 214 transmits a rotation control command specifying a rotation speed of 15 rpm and a rotation angle of 90 ° to the PM motion controller 222 (S302; FIG. 8).
Thereby, the PM motion controller 222 controls the rotation mechanism 156 (FIG. 2) of the process chamber 126, and the substrate 124 in the process chamber 126 is further rotated 90 °.

The PM motion controller 222 transmits a rotation mechanism control operation completion notification to the PMC 214 (S304; FIG. 8).
The PMC 214 adds the rotation angle 90 ° to the cumulative rotation angle, and determines that the cumulative rotation angle (360 °) is the same as 360 ° (360 ° × 1 rotation) (that is, not small) ( S306, S308).
Thus, step 2 of the derivation recipe is completed, and the second controller 20 starts control according to step 3.

[Features of substrate processing apparatus 2]
As described above, according to the substrate processing apparatus 2 according to the embodiment of the present invention, a derived recipe showing finer control than the basic recipe can be generated in one step without adding additional steps from the basic recipe. This reduces the burden on the recipe setter.
Further, since finer control than the basic recipe can be easily set, the degree of freedom of control content can be increased and the choice of substrate processing methods can be increased.

Note that the PMC 214 and the PM motion controller 222 (FIG. 6) of the substrate processing apparatus 2 according to the embodiment of the present invention may be realized using a general-purpose computer system, not a dedicated system.
For example, in the PMC 214 and the PM motion controller 222, a program for executing the above-described rotation mechanism control processing stored in a storage medium (flexible disk, CD-ROM, USB, etc.) is loaded into the memory of a general-purpose computer. It is configured by being executed on the operating OS by specifically using the hardware resources of a general-purpose computer.

Further, means for supplying such a program is arbitrary.
As described above, the program may be supplied not only via a predetermined storage medium but also via a communication line, a communication network, a communication system, or the like.
The above-described rotation mechanism control process is executed by executing the program thus provided on the OS of the general-purpose computer in the same manner as other applications.

The substrate processing apparatus may be an apparatus for processing a glass substrate such as an LCD (Liquid Crystal Display) apparatus as well as a semiconductor manufacturing apparatus.
Further, the substrate processing apparatus may be an exposure apparatus, a lithography apparatus, a coating apparatus, a CVD (Chemical Vapor Deposition) apparatus using plasma, or the like.
The film forming process includes, for example, a process for forming CVD, PVD (Physical Vapor Deposition), an oxide film and a nitride film, and a process for forming a film containing metal.

[Preferred embodiment of the present invention]
Hereinafter, preferred embodiments of the present invention will be additionally described.

One aspect of the present invention is a processing chamber configured by a placement unit that places at least a plurality of substrates, and a plurality of chambers that perform a plurality of types of predetermined processes on the substrates,
Executing the recipe composed of a plurality of processing stages in which predetermined processing conditions are set for the processing of the substrate, rotating the mounting unit based on the processing conditions, Control means for controlling the substrate mounted on the substrate to move to each of the plurality of rooms and performing a corresponding process on each of the plurality of rooms.
The plurality of chambers indicate a plasma processing chamber that performs plasma processing on the substrate, a purge chamber that supplies an inert gas to the substrate, and a reaction chamber that supplies a reactive gas to the substrate. Device.

Preferably,
Furthermore, it has an operation means having at least a display means for displaying an operation screen used for setting the processing conditions.

Also preferably,
The processing conditions include pressure, temperature, a mass flow controller that controls the flow rate of the processing gas supplied into the processing chamber, a valve that supplies and exhausts the processing gas, RF, and each mechanism that operates the substrate processing apparatus. At least the parameters used are set.

Also preferably,
One of the mechanisms is a rotating mechanism that rotates the mounting portion.
The rotation control parameter used for controlling the rotation mechanism includes at least one of a rotation angle for rotating the mounting unit, a waiting time until the next operation, and a rotation speed for rotating the mounting unit.

Also preferably,
The processing chamber further includes a partition that separates the plurality of chambers.

Also preferably,
Furthermore, the rotation control parameter is specified by the control unit, and rotation control means for controlling the placement unit to rotate based on the specified rotation control parameter.

Still another aspect of the present invention provides:
With respect to processing of the substrate, a processing chamber composed of a mounting section for mounting at least a plurality of substrates, a plurality of chambers for performing a plurality of types of predetermined processing on the substrates, and A control unit configured to execute a recipe including a plurality of processing stages in which predetermined processing conditions are set, and to control the processing chamber; and a rotation control unit that controls a rotation mechanism that rotates the placement unit. In a substrate processing apparatus having
The control means designating a rotation control parameter used for controlling the rotation mechanism included in the processing condition to the rotation control means;
The rotation control means controlling the rotation mechanism based on the designated rotation control parameter and rotating the mounting portion;
The step of performing the processing based on the processing condition with respect to the substrate placed on the mounting portion rotated by the rotation control means, the control means satisfying an end condition based on the rotation control parameter This is a rotation control program for the rotation mechanism that is repeatedly executed by the computer of the substrate processing apparatus.

Still another aspect of the present invention provides:
With respect to processing of the substrate, a processing chamber composed of a mounting section for mounting at least a plurality of substrates, a plurality of chambers for performing a plurality of types of predetermined processing on the substrates, and A control unit configured to execute a recipe including a plurality of processing stages in which predetermined processing conditions are set, and to control the processing chamber; and a rotation control unit that controls a rotation mechanism that rotates the placement unit. In a substrate processing apparatus having
The control means designates a rotation control parameter used for controlling the rotation mechanism included in the processing condition to the rotation control means;
The rotation control means controls the rotation mechanism based on the designated rotation control parameter, rotates the mounting portion,
The control means performs processing on the substrate placed on the placement unit rotated by the rotation control means based on the processing condition until the termination condition based on the rotation control parameter is satisfied. This is a method of controlling the rotating mechanism repeatedly.

Still another aspect of the present invention provides:
With respect to processing of the substrate, a processing chamber composed of a mounting section for mounting at least a plurality of substrates, a plurality of chambers for performing a plurality of types of predetermined processing on the substrates, and In a substrate processing apparatus having a controller configured to execute a recipe including a plurality of processing stages in which predetermined processing conditions are set, and to control the processing chamber,
The control means is
Transmitting a rotation control command specifying a rotation control parameter used for controlling the rotation mechanism included in the processing condition;
Receiving an operation completion notification for the rotation control command;
Determining whether a rotation control end condition based on the rotation control parameter is met;
A program for causing the computer of the substrate processing apparatus to execute a step of stopping the control operation of the processing chamber for a time determined based on the rotation control parameter except when it is determined that the end condition is met.

1, 2 ... substrate processing apparatus,
10, 20 ... control controller,
200 ... Network,
202: Digital signal line,
204 ... serial line,
206... Switching hub,
210 ... operation unit,
212 ... Display device,
214 ... PMC,
216... Storage unit,
218 ... Conveyance system controller,
220 ... Robot controller,
222 ... PM motion controller,
224 ... Host computer,
226: Valve digital I / O,
228 ... SW digital I / O,
230 ... sequencer,
232 ... Pressure controller,
120 ... Vacuum transfer chamber,
122 ... load lock room,
124... Substrate
126 ... Process chamber,
130 ... substrate mounting table,
150 ... Plasma processing chamber,
152 ... N2 purge chamber,
154: Gas precursor room,
156 ... rotation mechanism,
158 ... partitioning part,
128 ... Vacuum robot,
132, 136, 138 ... gate valves,
140 ... atmospheric transfer chamber,
142 ... load port,
144 ... atmospheric robot,
146... Orientation flat alignment device,
148 ... Carrier cassette

Claims (2)

A processing chamber composed of a mounting section for mounting at least a plurality of substrates, and a plurality of chambers for performing a plurality of predetermined types of processing on the substrates;
Executing the recipe composed of a plurality of processing stages in which predetermined processing conditions are set for the processing of the substrate, rotating the mounting unit based on the processing conditions, A substrate processing apparatus, comprising: a control unit configured to move the substrate placed on each of the plurality of rooms and control the substrate to perform a corresponding process in each of the plurality of rooms. In a semiconductor manufacturing apparatus having a processing chamber composed of a mounting section for mounting at least a plurality of substrates and a plurality of chambers for performing a plurality of types of predetermined processing on the substrates,
Executing the recipe composed of a plurality of processing stages in which predetermined processing conditions are set for the processing of the substrate, rotating the mounting unit based on the processing conditions, A semiconductor manufacturing method of manufacturing a semiconductor device by moving the substrate placed on the substrate to each of the plurality of rooms and controlling the substrate to perform a corresponding process in each of the plurality of chambers.

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