JP2014063908A - Substrate processing system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To appropriately form a prescribed pattern on a substrate in substrate processing which uses a block copolymer including a hydrophilic polymer and a hydrophobic polymer.SOLUTION: A substrate processing system 1 which processes a wafer W using a block copolymer including a first polymer and a second polymer comprises: a processing station 11 comprising a block copolymer coating device which coats a block copolymer on the wafer W and a polymer separation device which separates the block copolymer coated on the substrate into a first polymer and a second polymer by phase separation; an etching station 12 including a polymer removal device which selectively removes the first polymer or the second polymer from the phase-separated block copolymer; and an interface station 13 which is provided adjacent to both the processing station 11 and the etching station 12 and transfers the wafer W between the processing station 11 and the etching station 12.

Description

  The present invention treats a substrate using a block copolymer comprising a hydrophilic (polar) polymer having hydrophilicity (polarity) and a hydrophobic (nonpolar) polymer having hydrophobicity (no polarity). The present invention relates to a substrate processing system.

  For example, in the manufacturing process of a semiconductor device, for example, a resist coating process for coating a resist solution on a semiconductor wafer (hereinafter referred to as “wafer”) to form a resist film, an exposure process for exposing a predetermined pattern on the resist film, Photolithographic processing for sequentially performing development processing for developing the exposed resist film is sequentially performed by the substrate processing system, and a predetermined resist pattern is formed on the wafer. Then, using the resist pattern as a mask, an etching process is performed on the film to be processed on the wafer, and then a resist film removing process is performed to form a predetermined pattern on the film to be processed.

  Incidentally, in recent years, in order to further increase the integration of semiconductor devices, it is required to make the pattern of the film to be processed finer. For this reason, miniaturization of the resist pattern has been advanced, and for example, the light of the exposure process in the photolithography process has been shortened. However, there are technical and cost limitations to shortening the wavelength of the exposure light source, and it is difficult to form a fine resist pattern on the order of several nanometers, for example, only by the method of advancing the wavelength of light. is there.

  Thus, a wafer processing method using a block copolymer composed of two types of block chains (polymers) has been proposed (Patent Document 1). In this method, first, a neutral layer having an intermediate affinity for two types of polymers is formed on a wafer, and a guide pattern is formed on the neutral layer by using, for example, a resist. Then, a block copolymer is apply | coated on a neutral layer and a block copolymer is phase-separated. Thereafter, by selectively removing one of the polymers by, for example, etching or the like, a fine pattern is formed on the wafer by the other polymer. Then, the processing target film is etched using the polymer pattern as a mask to form a predetermined pattern on the processing target film.

JP 2008-36491 A

  By the way, at present, there is no substrate processing system that consistently performs processing on a wafer, such as application of a block copolymer as described above and selective removal of a polymer after phase separation. Therefore, at present, each processing is performed by a processing apparatus provided individually.

  However, if the throughput from the application of the block copolymer to the etching after the phase separation of the polymer is not constant or the thermal history of the wafer varies, it is formed of the polymer. It has been confirmed that variations occur in the pattern.

  Therefore, when each process is performed by an individual processing apparatus as in the present situation, the throughput and the heat history are not constant due to variations in the transport time between the processing apparatuses, and variations in the pattern formed by the polymer are avoided. Is difficult.

  The present invention has been made in view of such points, and in the formation of a pattern using a block copolymer, while maintaining a constant throughput and thermal history, the selection of the polymer after the phase separation from the application of the block copolymer. The goal is to process the wafer consistently until removal.

  In order to achieve the above object, the present invention is a system for processing a substrate using a block copolymer containing a first polymer and a second polymer, wherein the block copolymer is coated on the substrate. A processing unit comprising: a block copolymer coating device that performs phase separation of the block copolymer applied to the substrate into the first polymer and the second polymer; and the phase separation A polymer removing device that selectively removes either the first polymer or the second polymer from the block copolymer, and is provided adjacent to both the processing station and the polymer removing device, An interface station for transferring a substrate between the processing station and the polymer removing apparatus is provided.

  According to the present invention, since the polymer removal device is provided adjacent to the processing station equipped with the block copolymer coating device and the polymer separation device via the interface station, the block copolymer coating to the polymer phase can be performed. The conveyance path and conveyance time in the process from separation to subsequent selective removal of the polymer can be made constant. As a result, the throughput and thermal history can be kept constant in pattern formation using the block copolymer.

  The processing station may further include a neutral layer forming device that forms a neutral layer on the substrate before the block copolymer is applied by the block copolymer coating device.

  The interface station includes a load lock, and a relay transfer mechanism that is disposed in the load lock and transfers a substrate to and from the polymer removing apparatus. The processing station and the polymer removing apparatus are load locked. It may be connected via.

  The polymer removal apparatus may be a plasma processing apparatus that etches either the first polymer or the second polymer by plasma processing.

  The processing station further includes a solvent supply device that supplies an organic solvent onto the phase-separated block copolymer to selectively remove either the first polymer or the second polymer. Also good.

  There may be a loading / unloading station for loading / unloading the substrate to / from the processing station, and the polymer removing apparatus may be disposed adjacent to the processing station and the loading / unloading station.

  The processing station develops the antireflection film forming apparatus that forms an antireflection film on the substrate, a resist coating apparatus that forms a resist film by applying a resist solution to the substrate, and the resist film after the exposure processing And a developing device.

  You may have the board | substrate inspection apparatus which test | inspects the board | substrate from which either the said 1st polymer or the said 2nd polymer was removed with the said polymer removal apparatus.

  The substrate inspection apparatus may be disposed between the carry-in / out station and the polymer removal apparatus.

  A substrate etching apparatus that etches the substrate using either the first polymer or the second polymer that has not been removed by the polymer removing apparatus as a mask, and the etching processing apparatus includes the carry-in / out station, You may arrange | position between polymer removal apparatuses.

  The etching apparatus may etch the substrate by plasma processing.

  The first polymer may be a hydrophilic polymer having hydrophilicity, and the second polymer may be a hydrophobic polymer having hydrophobicity.

  The hydrophilic polymer may be polymethyl methacrylate, and the hydrophobic polymer may be polystyrene.

  According to the present invention, a predetermined pattern can be appropriately formed on a substrate in substrate processing using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer.

It is explanatory drawing which shows the outline of a structure of the substrate processing system concerning this Embodiment. It is a side view which shows the outline of the internal structure of a substrate processing system. It is a side view which shows the outline of the internal structure of a substrate processing system. It is explanatory drawing which shows the outline of a structure of a relay conveyance apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of a developing device. It is a cross-sectional view showing the outline of the configuration of the developing device. It is a cross-sectional view which shows the outline of a structure of the heat processing apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of the heat processing apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of an ultraviolet irradiation device. It is the flowchart explaining the main processes of wafer processing. It is explanatory drawing of the longitudinal cross-section which shows a mode that the resist pattern was formed on the wafer. It is explanatory drawing of the longitudinal cross-section which shows a mode that the neutral layer was formed on the wafer. It is explanatory drawing of the longitudinal cross-section which shows a mode that the block copolymer was apply | coated on the wafer. It is explanatory drawing of the longitudinal cross-section which shows a mode that the block copolymer was phase-separated into the hydrophilic polymer and the hydrophobic polymer. It is explanatory drawing of the plane which shows a mode that the block copolymer was phase-separated into the hydrophilic polymer and the hydrophobic polymer. It is explanatory drawing of the longitudinal cross-section which shows a mode that the hydrophilic polymer was removed. It is explanatory drawing of the longitudinal cross-section which shows a mode that the resist pattern was formed on the wafer in other embodiment. It is explanatory drawing of the longitudinal cross-section which shows a mode that the block copolymer was phase-separated into the hydrophilic polymer and the hydrophobic polymer in other embodiment. It is explanatory drawing of the longitudinal cross-section which shows a mode that the ultraviolet rays were irradiated to the neutral layer in other embodiment. It is explanatory drawing of the longitudinal cross-section which shows a mode that the block copolymer was apply | coated on the neutral layer in other embodiment. It is explanatory drawing of the longitudinal cross-section which shows a mode that the block copolymer was phase-separated into the hydrophilic polymer and the hydrophobic polymer in other embodiment. It is explanatory drawing of the longitudinal cross-section which shows a mode that the pattern was formed with the resist pattern and the polystyrene film. It is explanatory drawing of the longitudinal cross-section which shows a mode that the resist pattern was removed. It is explanatory drawing of the longitudinal cross-section which shows a mode that the neutral layer was formed on the antireflection film. It is explanatory drawing of the longitudinal cross-section which shows a mode that the block copolymer was apply | coated on the wafer. It is explanatory drawing of the longitudinal cross-section which shows a mode that the block copolymer was phase-separated into the hydrophilic polymer and the hydrophobic polymer. It is explanatory drawing which shows the outline of a structure of the substrate processing system concerning other embodiment. It is a side view which shows the outline of the internal structure of the substrate processing system concerning other embodiment. It is the flowchart explaining the main processes of the wafer processing concerning other embodiment. It is explanatory drawing which shows the outline of a structure of the substrate processing system concerning other embodiment. It is explanatory drawing which shows the outline of a structure of the substrate processing system concerning other embodiment. It is explanatory drawing of the plane which shows a mode that the resist pattern was formed on the wafer in other embodiment. It is explanatory drawing of the plane which shows a mode that the block copolymer was phase-separated into the hydrophilic polymer and the hydrophobic polymer in other embodiment.

  Embodiments of the present invention will be described below. FIG. 1 is an explanatory diagram showing an outline of a configuration of a substrate processing system 1 according to the present embodiment.

  As shown in FIG. 1, the substrate processing system 1 is loaded into a cassette station 10 as a loading / unloading station where a cassette C containing a plurality of wafers W is loaded / unloaded from / to the outside, for example. A processing station 11 including a plurality of various processing apparatuses that perform predetermined processing on a wafer in a single wafer manner, an etching station 12 that includes etching apparatuses 120 and 121 described below that perform etching processing on the wafer, and processing An interface station 13 that is adjacent to both the station 11 and the etching station 12 and that transfers the wafer W between the processing station 11 and the etching station 12 is integrally connected. In the present embodiment, a case where a resist film is formed in advance on the wafer W processed by the substrate processing system 1 and the resist film is subjected to an exposure process in a predetermined pattern will be described as an example. .

  The cassette station 10 is provided with a cassette mounting table 20. The cassette mounting table 20 is provided with a plurality of, for example, four cassette mounting plates 21. The cassette mounting plates 21 are arranged in a line in the horizontal X direction (vertical direction in FIG. 1). The cassette C can be placed on these cassette placement plates 21 when the cassette C is carried in and out of the coating and developing treatment apparatus 2.

  As shown in FIG. 1, the cassette station 10 is provided with a wafer transfer device 23 that is movable on a transfer path 22 that extends in the X direction. The wafer transfer device 23 is also movable in the vertical direction and the vertical axis direction (θ direction), and includes a cassette C on each cassette mounting plate 21 and a delivery device for a third block G3 of the processing station 11 described later. The wafer W can be carried in and out.

  The processing station 11 is provided with a plurality of, for example, four blocks G1, G2, G3, and G4 having various devices. For example, the first block G1 is provided on the front side of the processing station 11 (X direction negative direction side in FIG. 1), and the second block is provided on the back side of the processing station 11 (X direction positive direction side in FIG. 1). Block G2 is provided. A third block G3 is provided on the cassette station 10 side (Y direction negative direction side in FIG. 1) of the processing station 11, and the interface station 13 side (Y direction positive direction side in FIG. 1) of the processing station 11 is provided. Is provided with a fourth block G4.

  For example, in the first block G1, as shown in FIG. 2, a plurality of liquid processing apparatuses, for example, a developing device 30 for developing a resist after exposure formed on the wafer W to form a resist pattern, A neutral layer forming device 31 that forms a neutral layer by applying a neutral agent on the wafer W, a cleaning device 32 that applies an organic solvent to the wafer W after forming the neutral layer and cleans the wafer W, and a wafer W A block copolymer coating device 33 for coating the block copolymer is stacked on the top in order from the bottom.

  For example, two developing devices 30, neutral layer forming devices 31, cleaning devices 32, and block copolymer coating devices 33 are arranged side by side in the horizontal direction. Note that the number and arrangement of the developing device 30, the neutral layer forming device 31, the cleaning device 32, and the block copolymer coating device 33 can be arbitrarily selected.

  In the developing device 30, the neutral layer forming device 31, the cleaning device 32, and the block copolymer coating device 33, for example, spin coating for coating a predetermined coating solution on the wafer W is performed. In spin coating, for example, a coating liquid is discharged onto the wafer W from a coating nozzle, and the wafer W is rotated to diffuse the coating liquid to the surface of the wafer W. The configuration of these liquid processing apparatuses will be described later.

  In addition, the block copolymer applied on the wafer W by the block copolymer coating apparatus 33 includes a first polymer and a second polymer. A hydrophobic polymer having hydrophobicity (nonpolar) is used as the first polymer, and a hydrophilic polymer having hydrophilicity (polarity) is used as the second polymer. In the present embodiment, for example, polymethyl methacrylate (PMMA) is used as the hydrophilic polymer, and for example, polystyrene (PS) is used as the hydrophobic polymer. The ratio of the molecular weight of the hydrophilic polymer in the block copolymer is 40% to 60%, and the ratio of the molecular weight of the hydrophobic polymer in the block copolymer is 60% to 40%. The block copolymer is a polymer obtained by linearly chemicalizing these hydrophilic polymer and hydrophobic polymer.

  For example, in the second block G2, as shown in FIG. 3, an ultraviolet irradiation device 40 for modifying the wafer W by irradiating ultraviolet rays, and heat treatment devices 41 and 42 for performing heat treatment of the wafer W are arranged in the vertical direction and the horizontal direction. Is provided. The ultraviolet irradiation device 40 includes a mounting table on which the wafer W is mounted, and an ultraviolet irradiation unit that irradiates the wafer W on the mounting table with ultraviolet rays. The configuration of the ultraviolet irradiation device 40 will be described later.

  The heat treatment apparatuses 41 and 42 have a hot plate for placing and heating the wafer W and a cooling plate for placing and cooling the wafer W, and can perform both heat treatment and cooling treatment. The heat treatment apparatus 41 is used for heat treatment before and after forming the neutral layer. The heat treatment device 42 is a polymer separation device that performs heat treatment of the wafer W coated with the block copolymer by the block copolymer coating device 33 and phase-separates the block copolymer into a hydrophilic polymer and a hydrophobic polymer. Function. The configuration of the heat treatment apparatuses 41 and 42 will be described later. Although the number and arrangement of the ultraviolet irradiation device 40 and the heat treatment devices 41 and 42 can be arbitrarily selected, it is preferable to arrange the wafer W so that the transfer time of the wafer W in the processing station 11 is the shortest.

  For example, in the third block G3, a plurality of delivery devices 50, 51, 52, 53, 54, 55, and 56 are provided in order from the bottom. The fourth block G4 is provided with a plurality of delivery devices 60, 61, 62 in order from the bottom.

  As shown in FIG. 1, a wafer transfer region D is formed in a region surrounded by the first block G1 to the fourth block G4. For example, a wafer transfer device 70 is disposed in the wafer transfer region D.

  The wafer transfer device 70 has a transfer arm that is movable in the Y direction, the X direction, the θ direction, and the vertical direction, for example. The wafer transfer device 70 moves in the wafer transfer area D and transfers the wafer W to a predetermined device in the surrounding first block G1, second block G2, third block G3, and fourth block G4. it can.

  For example, as shown in FIG. 3, a plurality of wafer transfer apparatuses 70 are arranged in the vertical direction, and the wafer W can be transferred to, for example, a predetermined apparatus having the same height of each of the blocks G1 to G4.

  Further, in the wafer transfer region D, a shuttle transfer device 80 that transfers the wafer W linearly between the third block G3 and the fourth block G4 is provided.

  The shuttle transport device 80 is movable linearly in the Y direction, for example. The shuttle transfer device 80 moves in the Y direction while supporting the wafer W, and can transfer the wafer W between the transfer device 52 of the third block G3 and the transfer device 62 of the fourth block G4.

  As shown in FIG. 1, a wafer transfer apparatus 100 is provided next to the third block G3 on the positive side in the X direction. The wafer transfer apparatus 100 has a transfer arm that is movable in the X direction, the θ direction, and the vertical direction, for example. The wafer transfer device 100 can move up and down while supporting the wafer W, and can transfer the wafer W to each delivery device in the third block G3.

  The interface station 13 is provided with a wafer transfer device 110 and load locks 111 and 112. The load locks 111 and 112 are arranged with the wafer transfer device 110 interposed therebetween. The wafer transfer device 110 has a transfer arm that is movable in the Y direction, the θ direction, and the vertical direction, for example. For example, the wafer transfer device 110 can transfer the wafer W between the transfer devices and the load locks 111 and 112 in the fourth block G4 by supporting the wafer W on a transfer arm. Shutters 113 and 114 are provided on the surfaces of the load locks 111 and 112 facing the wafer transfer device 110, respectively. By evacuating the load locks 111 and 112 with an exhaust mechanism (not shown) with the shutters 113 and 114 closed, the inside of the load locks 111 and 112 can be in a reduced pressure atmosphere.

  Etching apparatuses 120 and 121 are provided in the etching station 12. The etching apparatuses 120 and 121 are connected to load locks 111 and 112 via shutters 122 and 123, respectively. The etching apparatuses 120 and 121 function as a polymer removing apparatus that performs an etching process on the block copolymer phase-separated on the wafer W and selectively removes a new aqueous polymer.

As the etching apparatuses 120 and 121, for example, an RIE (Reactive Ion Etching) apparatus that is a plasma processing apparatus is used. That is, in the etching apparatuses 120 and 121, dry etching is performed in which a reactive gas (etching gas) such as oxygen (O ₂ ) is plasma-excited by RF power, for example, and the hydrophobic polymer is etched by this plasma.

  The transfer of the wafer W between the load locks 111 and 112 and the etching apparatuses 120 and 121 is performed by relay transfer mechanisms 124 and 124 provided in the load locks 111 and 112, respectively. As shown in FIG. 4, the relay transport mechanism 124 includes a support base 125, a link part 126 connected to the support base 125, and an arm part 127 connected to the link part 125. The link portion 126 is connected to a drive mechanism (not shown), and the arm portion 127 can be moved between a position above the support base 125 and the etching apparatus 120. For example, three elevating pins 126 that support the wafer W at the upper end thereof are embedded in the support base 124. The elevating pins 128 are configured to be movable up and down in the vertical direction. The elevating pins 128 are moved up and down in a state where the wafer transfer device 110 is kept on the upper side of the support base 125. Wafers W can be delivered between them. Similarly, the arm part 127 is made to stand by above the support base 125 and the elevating pins 128 are moved up and down, so that the wafer W can be delivered to and from the arm part 127.

  Next, the configuration of the developing device 30 described above will be described. As shown in FIG. 5, the development processing apparatus 30 includes a processing container 130 having a wafer W loading / unloading port (not shown) formed on a side surface.

  A spin chuck 140 that holds and rotates the wafer W is provided in the processing container 130. On the upper surface of the spin chuck 140, for example, a suction port (not shown) for sucking the wafer W is provided. By suction from the suction port, the wafer W is sucked and held on the spin chuck 140.

  The spin chuck 140 can be rotated at a predetermined speed by a chuck driving unit 141 such as a motor. The chuck driving unit 141 is provided with an elevating drive source (not shown) such as a cylinder, and the spin chuck 140 is movable up and down.

  Around the spin chuck 140, there is provided a cup 142 that receives and collects the liquid scattered or dropped from the wafer W. The cup 142 has an opening larger than the wafer W so that the spin chuck 140 can be moved up and down on the upper surface. A discharge pipe 143 that discharges the collected liquid and an exhaust pipe 144 that exhausts the atmosphere in the cup 142 are connected to the lower surface of the cup 142.

  As shown in FIG. 6, a rail 150 extending along the Y direction (left and right direction in FIG. 6) is formed on the negative side of the cup 122 in the X direction (downward direction in FIG. 6). The rail 150 is formed, for example, from the outside of the cup 142 in the Y direction negative direction (left direction in FIG. 6) to the outside in the Y direction positive direction (right direction in FIG. 6). For example, two arms 151 and 152 are attached to the rail 150.

  As shown in FIGS. 5 and 6, the first arm 151 supports a supply nozzle 153 that supplies a developer and an organic solvent. The first arm 151 is movable on the rail 150 by a nozzle driving unit 154 shown in FIG. As a result, the supply nozzle 153 can move from the standby portion 155 installed on the outer side of the cup 152 on the positive side in the Y direction to above the center of the wafer W in the cup 142, and further on the surface of the wafer W It can move in the radial direction of W. The first arm 151 can be moved up and down by a nozzle driving unit 154, and the height of the supply nozzle 153 can be adjusted.

  As shown in FIG. 5, the supply nozzle 153 is connected to a developer supply pipe 157 and an organic solvent supply pipe 158 that communicate with the developer supply source 156.

  A cleaning liquid nozzle 160 for supplying a cleaning liquid, for example, pure water, is supported on the second arm 152. The second arm 152 is movable on the rail 150 by the nozzle driving unit 161 shown in FIG. 6, and the cleaning liquid nozzle 160 is moved from the standby unit 162 provided on the Y direction negative direction side of the cup 142 to the cup. 142 can be moved to above the center of the wafer W. Further, the second arm 152 can be moved up and down by the nozzle driving unit 161, and the height of the cleaning liquid nozzle 160 can be adjusted.

  As shown in FIG. 5, a cleaning liquid supply pipe 164 that communicates with a cleaning liquid supply source 163 is connected to the cleaning liquid nozzle 160. The cleaning liquid is stored in the cleaning liquid supply source 163. The cleaning liquid supply pipe 164 is provided with a supply device group 165 including a valve for controlling the flow of the cleaning liquid, a flow rate adjusting unit, and the like. In the above configuration, the supply nozzle 153 for supplying the developer and the cleaning liquid nozzle 160 for supplying the cleaning liquid are supported by separate arms. However, the supply nozzle is supported by the same arm and controlled by movement of the arms. The movement and supply timing of 153 and the cleaning liquid nozzle 160 may be controlled.

  The configurations of the neutral layer forming device 31, the cleaning device 32, and the block copolymer coating device 33, which are other liquid processing devices, are the same as those of the development processing device 30 described above except that the liquid supplied from the nozzle is different. The description is omitted because it is similar.

  Next, the configuration of the heat treatment apparatus 41 described above will be described. FIG. 7 is a transverse cross-sectional view showing an outline of the configuration of the heat treatment apparatus 41, and FIG. 8 is a vertical cross-sectional view showing an outline of the configuration of the heat treatment apparatus 41.

  For example, the heat treatment apparatus 41 includes a processing container 170 whose inside can be closed, and a loading / unloading port 171 for the wafer W is formed on a side surface of the processing container 170 facing the wafer transfer apparatus 70. In addition, the heat treatment apparatus 41 includes a heat plate 172 for placing and heating the wafer W in the processing container 110 and a cooling plate 173 for placing and adjusting the temperature of the wafer W. You can do both.

  The hot plate 172 has a substantially disk shape with a large thickness. The hot plate 172 has a horizontal upper surface, and a suction port (not shown) for sucking the wafer W, for example, is provided on the upper surface. By suction from the suction port, the wafer W can be sucked and held on the hot plate 172.

  As shown in FIG. 8, an electric heater 173 is provided inside the heat plate 172, and the control device 300 (to be described later) controls the amount of electric power supplied to the electric heater 173, so that the heat plate 172 is predetermined. Can be controlled to the set temperature.

  A plurality of through holes 174 are formed in the hot plate 172 so as to penetrate in the vertical direction. A lift pin 175 is provided in the through hole 174. The lift pins 175 can be moved up and down by a lift drive mechanism 176 such as a cylinder. The elevating pins 175 are inserted through the through holes 174 and protrude from the upper surface of the hot plate 172 so that the elevating pins 175 can move up and down while supporting the wafer W.

  The hot plate 172 is provided with an annular holding member 177 that holds the outer peripheral portion of the hot plate 172. The holding member 177 is provided with a cylindrical support ring 178 that surrounds the outer periphery of the holding member 177 and accommodates the elevating pins 175.

  The cooling plate 173 has a thick substantially disk shape. The cooling plate 173 has a horizontal upper surface, and a suction port (not shown) for sucking, for example, the wafer W is provided on the upper surface. By suction from this suction port, the wafer W can be sucked and held on the cooling plate 173.

  A cooling member (not shown) such as a Peltier element is built in the cooling plate 173, and the cooling plate 173 can be adjusted to a predetermined set temperature.

  The other configuration of the cooling plate 173 has the same configuration as the hot plate 172. That is, the cooling plate 173 is formed with a plurality of through holes 180 penetrating in the vertical direction. Elevating pins 181 are provided in the through hole 180. The lift pins 181 can be moved up and down by a lift drive mechanism 182 such as a cylinder. The elevating pins 181 are inserted through the through-holes 180 and project from the upper surface of the cooling plate 173 so that the elevating pins 181 can move up and down while supporting the wafer W.

  The cooling plate 173 is provided with an annular holding member 183 that holds the outer periphery of the cooling plate 173. The holding member 183 is provided with a cylindrical support ring 184 that surrounds the outer periphery of the holding member 183 and accommodates the lifting pins 181. Note that the configuration of the heat treatment unit 42 is the same as the configuration of the heat treatment unit 41, and thus description thereof is omitted.

  Next, the configuration of the ultraviolet irradiation device 40 described above will be described. FIG. 9 is a longitudinal sectional view showing an outline of the configuration of the ultraviolet irradiation device 40. The ultraviolet irradiation device 40 includes a processing container 200 that can be closed inside. In the processing container 200, a mounting table 210 on which the wafer W is mounted, and an ultraviolet irradiation lamp 211 provided above the mounting table 210. A light shielding plate 212 provided between the mounting table 210 and the ultraviolet irradiation lamp 211 is provided. A loading / unloading port 213 for the wafer W is formed on the side surface of the processing container 200 facing the wafer transfer device 70.

  The mounting table 210 is formed with a plurality of through holes 220 penetrating in the vertical direction. Each through hole 220 is provided with an elevating pin 221 configured to be moved up and down by an elevating mechanism (not shown). The elevating pins 221 are inserted through the through holes 220 and protrude from the upper surface of the mounting table 210 to support the wafer W.

  The ultraviolet irradiation lamp 211 is held in the processing container 200 by a holding member (not shown). As the ultraviolet irradiation lamp 211, for example, a linear excimer lamp having a wavelength of 172 nm is used. Although three ultraviolet lamps 211 are illustrated in FIG. 9, the shape, number, and arrangement of the ultraviolet irradiation lamps 211 can be arbitrarily set.

  The light shielding plate 212 has a substantially disk shape, and a window 212a that transmits ultraviolet rays in a predetermined pattern is formed at the center thereof. Therefore, when the ultraviolet irradiation lamp 211 is used, the window 212 of the light shielding plate functions as a mask for ultraviolet rays, blocks ultraviolet rays to the peripheral portion of the wafer W, and irradiates the central portion of the wafer W with ultraviolet rays in a predetermined pattern. As a result, the region of the wafer W irradiated with the ultraviolet rays is modified. The light shielding plate 212 is made of a material that does not transmit the ultraviolet rays emitted from the ultraviolet lamp 211 and is not easily deteriorated by the ultraviolet rays, such as a ceramic plate or a metal plate.

  The substrate processing system 1 is provided with a control unit 300 as shown in FIG. The control unit 300 is a computer, for example, and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the wafer W in the substrate processing system 1. The program storage unit also stores a program for controlling operations of drive systems such as the above-described various processing apparatuses and transfer apparatuses to realize various processes in the substrate processing system 1 with a predetermined tact time. Yes. The program is recorded on a computer-readable storage medium such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), or memory card. Or installed in the control unit 300 from the storage medium.

  Next, wafer processing performed using the substrate processing system 1 configured as described above will be described. FIG. 10 is a flowchart showing an example of main steps of such wafer processing.

  First, a cassette C storing a plurality of wafers W is carried into the cassette station 10 of the substrate processing system 1 and placed on a predetermined cassette placement plate 21. Thereafter, the wafers W in the cassette C are sequentially taken out by the wafer transfer device 23 and transferred to the transfer device 53 of the processing station 11. Note that a resist film is formed in advance on the wafer W to be processed by the substrate processing system 1, and the resist film is subjected to exposure processing in a predetermined pattern.

  Next, the wafer W is transferred to the developing device 30 by the wafer transfer device 70. In the developing device 30, a developing solution is supplied to the wafer W, and the resist is developed into a predetermined pattern. After the development is completed, the wafer W is transferred to the heat treatment apparatus 41 by the wafer transfer apparatus 70 and subjected to a post-bake process. Thus, a predetermined resist pattern 400 is formed on the wafer W as shown in FIG. 11 (step S1 in FIG. 10). In the present embodiment, the resist pattern 400 is a so-called line-and-space resist pattern having a straight line portion 400a and a straight space portion 400b in plan view. The width of the space portion 400b is set so that the hydrophilic polymer 403 and the hydrophobic polymer 404 are alternately arranged in the odd number layers in the space portion 400b as described later.

  Next, the wafer W is transferred to the neutral layer forming device 31 by the wafer transfer device 70. In the neutral layer forming apparatus 31, as shown in FIG. 12, a neutral agent is applied on the wafer W to form a neutral layer 401 (step S2 in FIG. 10). Thereafter, the wafer W is transferred to the heat treatment apparatus 41, heated, temperature-controlled, and then returned to the delivery apparatus 53.

  Thereafter, the wafer W is transferred to the cleaning device 32 by the wafer transfer device 70. In the cleaning device 32, an organic solvent is supplied onto the wafer W after the neutral layer 401 is formed, and foreign matters on the resist pattern 400 and the neutral layer 401 are washed away.

  Thereafter, the wafer W is transferred to the block copolymer coating device 33 by the wafer transfer device 70. In the block copolymer coating device 33, the block copolymer 402 is coated on the neutral layer 401 of the wafer W as shown in FIG. 13 (step S3 in FIG. 10).

  Next, the wafer W is transferred to the heat treatment apparatus 42 by the wafer transfer apparatus 70. In the heat treatment apparatus 42, heat treatment at a predetermined temperature is performed on the wafer W. At this time, for example, nitrogen gas is supplied to make the inside of the heat treatment apparatus 42 into a low oxygen atmosphere, and the heat treatment is performed in the nitrogen gas atmosphere. Then, as shown in FIGS. 14 and 15, the block copolymer 402 on the wafer W is phase-separated into a hydrophilic polymer 403 and a hydrophobic polymer 404 (step S4 in FIG. 10).

  Here, as described above, in the block copolymer 402, the molecular weight ratio of the hydrophilic polymer 403 is 40% to 60%, and the molecular weight ratio of the hydrophobic polymer 404 is 60% to 40%. Then, in step S4, as shown in FIGS. 14 and 15, the hydrophilic polymer 403 and the hydrophobic polymer 404 are phase-separated into a lamellar structure. In addition, since the width of the space portion 400b of the resist pattern 400 is formed to a predetermined width, the hydrophilic polymer 403 and the hydrophobic polymer 404 are alternately arranged in odd layers in the space portion 400b of the resist pattern.

  Thereafter, the wafer W is transferred to the delivery device 56 by the wafer transfer device 70. Next, the wafer W is transferred to the transfer device 52 by the wafer transfer device 100 and transferred to the transfer device 62 by the shuttle transfer device 80.

  Thereafter, the wafer W is transferred to the load lock 111 by the wafer transfer device 110 of the interface station 13. When the wafer W is loaded into the load lock 111, the shutters 113 and 122 are closed, the inside of the load lock 111 is sealed, and the pressure is reduced. Thereafter, when the inside of the load lock 111 reaches a predetermined degree of vacuum, the shutter 122 is opened, and the load lock 111 and the etching apparatus 120 that has been previously depressurized are communicated. Then, the wafer W is transferred to the etching apparatus 120 by the relay transfer mechanism 124.

  In the etching apparatus 120, the wafer W is etched by plasma processing to selectively remove the hydrophilic polymer 403 as shown in FIG. 16, and a predetermined pattern is formed by the hydrophobic polymer 404 (step S5 in FIG. 10). ).

  Thereafter, the wafer W is returned to the load lock 111 again by the relay transfer mechanism 124. Then, the wafer is transferred to the delivery device 62 by the wafer transfer device 110. Next, the wafer W is transferred to the transfer device 52 by the wafer transfer device 100 and transferred to the transfer device 52 by the shuttle transfer device 80. Thereafter, the wafer is transferred to the cassette C of the predetermined cassette mounting plate 21 by the wafer transfer device 23 of the cassette station 10 and unloaded from the substrate processing system 1.

  According to the above embodiment, the processing station 11 includes the block copolymer coating device 33, the heat treatment device 42 as a polymer separation device, and the wafer transfer device 70 for transferring the wafer W in the processing station 11, and the processing An etching station provided with etching apparatuses 120 and 121 as polymer removing apparatuses is provided adjacent to the station 11. Therefore, in the steps from application of the block copolymer 402 to phase separation of the block copolymer 402 into the hydrophilic polymer 403 and the hydrophobic polymer 404 and subsequent selective removal of the hydrophilic polymer by etching, a conveyance path And the conveyance time can be made constant. As a result, the throughput and thermal history can be kept constant in pattern formation using the block copolymer 402, and variations in the pattern formed of the polymer can be avoided.

  In the above embodiment, the block copolymer 402 is applied to the wafer after the neutral layer 401 is formed. However, the neutral layer 401 is not necessarily applied. In other words, the neutral layer forming device 31 is not necessarily provided.

  For example, in the photolithography process for forming the resist pattern 400, an antireflection film is formed as a base of the resist film. Since this antireflection film has hydrophilicity, for example, as shown in FIG. 17, for example, three layers of hydrophilic polymer 403 and hydrophobic polymer 404 are alternately arranged in the width of the space portion 400b of the resist pattern 400. Set to be. Then, since the antireflection film 410 has hydrophilicity, as shown in FIG. 18, the hydrophilic polymer 403 is disposed in the middle of the space portion 400b, and the hydrophobic polymer 404 is disposed on both sides thereof. In such a case, after forming the resist pattern 400 in step S1, the resist pattern 400 is transferred to the block copolymer coating device 33 instead of the neutral layer forming device 31, and coating of the block copolymer 402 (step S3) is performed. The other steps S4 to S5 are the same as in the above embodiment.

  Even in such a case, in the process from the application of the block copolymer 402 to the phase separation of the block copolymer 402 into the hydrophilic polymer 403 and the hydrophobic polymer 404 and the subsequent selective removal of the hydrophilic polymer by etching. Since the transport path and transport time can be made constant, the throughput and thermal history can be kept constant in pattern formation using the block copolymer 402.

  In the above embodiment, the case where a resist film is formed on the wafer W in advance and the resist film is subjected to an exposure process in a predetermined pattern has been described. It is not limited to the form. For example, instead of the resist subjected to the exposure process, the wafer W to which the neutral film 401 is applied in advance may be processed. Further, the wafer W on which a resist pattern is formed in advance may be processed. First, the case where the wafer W on which the neutral film 401 has been applied in advance is processed will be described.

  When applying the wafer W to which the neutral layer 401 is applied, the wafer W taken out from the cassette C is first transported to the ultraviolet irradiation device 40. In the ultraviolet irradiation device 40, the neutral layer 401 on the wafer W is irradiated with ultraviolet rays as shown in FIG. At this time, the neutral layer 401 is irradiated with ultraviolet rays in a predetermined pattern, for example, a width where three layers of the hydrophilic polymer 403 and the hydrophobic polymer 404 are alternately arranged by the light shielding plate 212. Then, the neutral layer 401 irradiated with ultraviolet rays is oxidized and hydrophilized. Hereinafter, the region of the neutral layer 401 thus made hydrophilic may be referred to as a hydrophilic region 420.

  When the wafer W is irradiated with ultraviolet rays having a wavelength of 300 nm or less, active oxygen can be generated from oxygen in the processing atmosphere, and the exposed surface of the neutral layer 401 is oxidized and hydrophilized by this active oxygen. In addition, in order to generate | occur | produce active oxygen more easily, it turns out that it is better to use ozone as a process atmosphere. In particular, when the wavelength of ultraviolet rays is 172 nm, not only when ozone is used as a processing atmosphere, but also when the processing atmosphere is an air atmosphere, active oxygen can be efficiently generated from oxygen in the air atmosphere. I know.

  Next, the wafer W is transferred to the heat treatment apparatus 41 and subjected to heat treatment. Thereafter, the wafer W is transferred to the block copolymer coating device 33. In the block copolymer coating device 33, the block copolymer 402 is coated on the neutral layer 401 of the wafer W as shown in FIG.

  Next, the wafer W is transferred to the heat treatment apparatus 42, and the block copolymer 404 is phase-separated into a hydrophilic polymer 403 and a hydrophobic polymer 404 as shown in FIG. At this time, since the region irradiated with ultraviolet rays has a predetermined width, the hydrophilic polymer 403 and the hydrophobic polymer 404 are alternately arranged in three layers on the hydrophilic region 420 of the neutral layer 401. . Specifically, since the surface of the hydrophilic region 420 has hydrophilicity, the hydrophilic polymer 403 is disposed in the middle of the hydrophilic region 420, and the hydrophobic polymers 404 and 404 are disposed on both sides thereof. And the hydrophilic polymer 403 and the hydrophobic polymer 404 are alternately arrange | positioned also on the other area | region of the neutral layer 401. FIG. Thereafter, the wafer W is etched in step S5.

  Next, processing of the wafer W on which a resist pattern has been formed in advance will be described. As shown in FIG. 22, a polystyrene film 411 is formed in advance on the lower surface of the resist pattern 400 on the wafer W on which the resist pattern 400 has been formed in advance. At this time, the line part 400a of the polystyrene film 411 and the resist pattern 400 is a line-and-space resist pattern, and the width of the line part 400a is such that only one layer of the hydrophilic polymer 405 is disposed in the line part 402a. Is set. In addition, the width of the space portion 400b is set so that the hydrophilic polymer 403 and the hydrophobic polymer 404 are alternately arranged in the space portion 400b by an odd number of layers. A lower antireflection film 410 is formed on the base of the resist pattern 400.

  When applying the wafer W made of the resist pattern 400 and the polystyrene film 411, the wafer W taken out from the cassette C is first transported to the cleaning device 32 and cleaned with an organic solvent. Thus, as shown in FIG. 23, the resist pattern 400 on the wafer W is removed, and a pattern of the polystyrene film 411 is formed on the wafer W.

  Next, the wafer W is transferred to the neutral layer forming apparatus 31. In the neutral layer forming apparatus 31, a neutral layer 401 is formed on the antireflection film 410 of the wafer W as shown in FIG. Thereafter, the wafer W is transferred to the heat treatment apparatus 40, heated, and the temperature is adjusted.

  Thereafter, the wafer W is transferred to the block copolymer coating device 33. In the block copolymer coating apparatus 33, the block copolymer 402 is coated on the neutral layer 401 and the polystyrene film 411 of the wafer W as shown in FIG.

  Next, the wafer W is transferred to the heat treatment apparatus 42 and subjected to heat treatment, and the block copolymer 402 is separated into a hydrophilic polymer 403 and a hydrophobic polymer 404 as shown in FIG. At this time, since the widths of the line part 400a and the space part 400b of the resist pattern 400 described above are formed to have predetermined widths, one layer of the hydrophobic polymer 404 is disposed on the polystyrene film 411, and the neutral layer 401 is formed. On the top, an odd number of layers of hydrophilic polymer 405 and hydrophobic polymer 406 are alternately arranged. Thereafter, the wafer W is etched in step S5.

  In the above embodiment, the so-called dry etching process is performed in the etching apparatuses 120 and 121 to selectively remove the hydrophilic polymer 403. However, the hydrophilic polymer 403 may be removed by a wet etching process. In such a case, for example, as shown in FIG. 21, a solvent supply device 500 that supplies an organic solvent onto the wafer W is provided in the first block G <b> 1 of the coating and developing treatment apparatus 2. The number and arrangement of the hydrophilic film forming apparatuses 500 can be arbitrarily selected. However, in order to minimize the conveyance of the wafer W, it is preferable to dispose the hydrophilic film forming apparatus 500 above the block copolymer coating apparatus 33. In the solvent supply device 500, for example, spin coating for applying a predetermined coating solution onto the wafer W is performed in the same manner as the other liquid processing devices of the first block G1.

  When the solvent supply device 50 is used, the wafer W obtained by phase-separating the block copolymer 402 in step S4 is first transferred to the ultraviolet irradiation device 40 in place of the etching device 120 in step S5. Then, by irradiating the wafer W with ultraviolet light having a wavelength of 200 nm or less, for example, 172 nm, the bond chain of polymethyl methacrylate, which is the hydrophilic polymer 403, is cut, and the polystyrene, which is the hydrophobic polymer 404, is crosslinked. At this time, ultraviolet irradiation is performed on the entire surface of the wafer W without using the light shielding plate 212. Thereafter, the wafer W is transferred to the solvent supply device 500, and isopropyl alcohol (IPA) is supplied to the wafer W in the solvent supply device 500. As a result, the hydrophilic polymer 403 whose bond chain has been cut by ultraviolet irradiation is dissolved and removed.

  When the hydrophilic polymer 403 is removed by a so-called dry etching process, since the selection ratio of the hydrophilic polymer 403 and the hydrophobic polymer 404 is, for example, about 3 to 7: 1, film slippage of the hydrophobic polymer 404 cannot be avoided. On the other hand, when the hydrophilic polymer 403 is removed by so-called wet etching using an organic solvent, since the hydrophobic polymer 404 is hardly dissolved in the organic solvent, film slippage can be avoided. As a result, a sufficient film thickness as a mask can be ensured when the film to be processed is etched using the pattern of the hydrophobic polymer 404 as a mask in subsequent steps.

  In the above embodiment, the substrate processing system 1 mainly performs the processing related to the coating process of the block copolymer 402. However, in the substrate processing system 1, the resist pattern which is the pre-processing of the coating of the block copolymer 402 is performed. 400 may be formed.

  In such a case, for example, as shown in FIG. 27, an etching station 510 is provided adjacent to the cassette station 10 and the processing station 11. An exposure device 511 is disposed on the side of the processing station 11 opposite to the cassette station 10. In FIG. 27, the wafer transfer device 110 and the load locks 111 and 112 provided in the interface station 13 are arranged in the etching station 510 in a straight line with respect to the etching devices 120 and 121, and the interface station 13 is omitted. This is because the transfer of the wafer W between the wafer transfer apparatus 110 and the wafer transfer apparatus 100 is taken into consideration. As long as the wafer W can be transferred between the wafer transfer apparatus 110 and the wafer transfer apparatus 100 as appropriate, the arrangement of the devices in the etching station 12 and the interface station 510 is not limited to this embodiment, and can be arbitrarily set. .

  For example, as shown in FIG. 28, in the first block G1 of the processing station 11, a lower antireflection film forming apparatus 520 that forms a lower antireflection film on the wafer W, a resist solution is applied to the wafer W, and a resist solution is applied. A resist coating apparatus 521 for forming a film and an upper reflective film forming apparatus 522 for forming an upper antireflection film on the resist film are further provided. The lower antireflection film forming device 520, the resist coating device 521, and the upper reflection film forming device 522 are arranged below the developing device 30 in this order from the bottom.

  Next, processing of the wafer W in the substrate processing system 1 will be described with reference to the flowchart shown in FIG. In forming the resist pattern 400 in the substrate processing system 1, the wafer W is first transferred to the lower antireflection film forming apparatus 520, and a lower antireflection film is formed on the wafer W (step T1 in FIG. 29). Thereafter, the wafer W is transferred to the heat treatment apparatus 41, heated, and the temperature is adjusted.

  Thereafter, the wafer W is transferred to the resist coating device 521, and a resist solution is applied onto the lower antireflection film of the wafer W to form a resist film (step T2 in FIG. 29). Thereafter, the wafer W is transferred to the heat treatment apparatus 41 and prebaked. Thereafter, the wafer W is transferred to the upper antireflection film forming apparatus 522, and an upper antireflection film is formed on the resist film (step T3 in FIG. 29). Thereafter, the wafer W is transferred to the exposure apparatus 511 and subjected to exposure processing with a predetermined pattern (step T4 in FIG. 29).

  Next, the wafer W is subjected to post-exposure baking in the heat treatment apparatus 41. Thereafter, the wafer W is transferred to the developing device 30 and developed. After completion of the development, the wafer W is transferred to the heat treatment apparatus 41 and subjected to a post baking process. Thus, a predetermined resist pattern is formed on the wafer W (step S1 in FIG. 29). The other steps 2 to S5 are the same as in the above embodiment.

  According to the above embodiment, the processing from the formation of the resist pattern on the wafer W to the pattern formation by the hydrophobic polymer 404 can be performed consistently by the substrate processing system 1. Therefore, the throughput and thermal history of the wafer W can be made constant, thereby avoiding variations in the pattern formed by the polymer.

  In the substrate processing system 1 shown in FIG. 27, the wafer W after the layer separation of the block copolymer 402 in step S4 is transferred to the etching station 12 disposed on the cassette station 10 side of the processing station 11. However, the transport route is different from the above embodiment.

  The substrate processing system 1 may further include an inspection station that inspects the wafer W on which a predetermined pattern is formed by removing the hydrophilic polymer 403 at the etching station 12. In this case, as shown in FIG. 30, an inspection station 530 for inspecting the wafer W is arranged between the etching station 12 and the cassette station 10, and the wafer W on which a predetermined pattern is formed in the etching station 12 is inspected. Transported to station 530 for inspection.

  In the inspection station 530, the pattern formed on the wafer W is imaged by, for example, a CCD camera, and the quality of the pattern is determined. If it is determined that the pattern is well formed, the wafer W is transferred to the cassette C of the cassette station 10, and if it is determined that there is an abnormality in the pattern, it is recovered, for example, in a recovery cassette CA.

  In this way, by determining whether the pattern is good or bad at the inspection station 530, it is possible to sort out a good wafer and a defective wafer without separately inspecting with another inspection apparatus, and it is possible to bring a defective wafer into a subsequent process. Disappear.

  Further, the substrate processing system 1 is a wafer etching apparatus as a substrate etching apparatus that performs an etching process on the wafer W using a pattern of the hydrophobic polymer 404 formed by removing the hydrophilic polymer 403 at the etching station 12 as a mask. The wafer etching station provided with may be provided. As shown in FIG. 31, the wafer etching station 540 is disposed between the etching station 12 and the cassette station 10.

  The wafer etching station 540 has the same configuration as that of the etching station 510 shown in FIG. 27. In the wafer etching station 540, wafer etching apparatuses 550 and 551, load locks 552 and 553, and a wafer transfer apparatus 560 are linear. Is arranged. The configurations of wafer etching apparatuses 550 and 551, load locks 552 and 553, and wafer transfer apparatus 560 are the same as those of wafer etching apparatuses 120 and 121, load locks 111 and 112, and wafer transfer apparatus 110, respectively.

  In the substrate processing system 1 shown in FIG. 31, the wafer W from which the hydrophilic polymer 403 has been removed in the etching station 510 through steps T1 to T4 and steps S1 to S5 is transferred to the wafer etching station 540. The wafer W transferred to the wafer etching station 540 is transferred to the wafer etching apparatus 552, and the wafer W or a film to be processed previously formed on the upper surface of the wafer W is etched using the hydrophobic polymer 404 as a mask. The wafer W after the etching process is transferred to the cassette station 10 and accommodated in the cassette C.

  According to the above embodiment, from the formation of the resist pattern on the wafer W to the etching process of the wafer W can be performed consistently by the substrate processing system 1. Therefore, the throughput and thermal history of the wafer W can be made constant, thereby avoiding variations in the pattern formed by the polymer.

  In the above embodiment, the block copolymer 402 on the wafer W is phase-separated into the hydrophilic polymer 403 and the hydrophobic polymer 404 having a lamellar structure. However, the substrate processing system 1 of the present invention uses the block copolymer 402 as the block copolymer 402. The present invention can also be applied to the case where phase separation into a hydrophilic polymer 403 and a hydrophobic polymer 404 having a cylinder structure.

  In the block copolymer 402 used in the present embodiment, the ratio of the molecular weight of the hydrophilic polymer 403 is 20% to 40%, and the ratio of the molecular weight of the hydrophobic polymer 404 in the block copolymer 402 is 80% to 60%. It is.

  In such a case, as shown in FIG. 32, a resist pattern having a circular space 400c in plan view is formed on the wafer W. The space portions 400c are arranged in a staggered manner in a plan view.

  Then, when the block copolymer 402 is phase-separated in step S5, it is phase-separated into a hydrophilic polymer 403 having a cylindrical structure and a hydrophobic polymer 405 as shown in FIG. The hydrophilic polymer 403 is formed on the hydrophilic space portion 400c and on the resist pattern 400 between the two space portions 400c and 400c. The hydrophobic polymer 404 is formed on the other resist pattern 400. Then, when the film to be processed on the wafer W is etched using the hydrophilic polymer 403 as a mask, a predetermined hole-shaped pattern is formed in the film to be processed.

  According to the present embodiment, the block copolymer 402 can be appropriately separated into the hydrophilic polymer 403 and the hydrophobic polymer 404 having a cylindrical structure, and the etching process of the film to be processed can be appropriately performed.

  The block copolymer 402 of the above embodiment has polymethyl methacrylate (PMMA) and polystyrene (PS), but includes a hydrophilic polymer having hydrophilicity and a hydrophobic polymer having hydrophobicity. It is not limited to this. For example, silicone rubber (PDMS), polyethylene oxide (PEO), polyethylene polybutadiene (PBD), polyvinyl pyridine (PVP), or the like may be used as the hydrophilic polymer.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.

  The present invention is useful when a substrate is treated with a block copolymer including, for example, a hydrophilic polymer having hydrophilicity and a hydrophobic polymer having hydrophobicity.

DESCRIPTION OF SYMBOLS 1 Substrate processing system 30 Developing device 31 Neutral layer forming device 32 Cleaning device 33 Block copolymer coating device 40 Ultraviolet irradiation device 41, 42 Heat treatment device 111, 112 Load lock 120, 121 Etching device 300 Control unit 400 Resist pattern 401 Medium Layer 402 block copolymer 403 hydrophilic polymer 404 hydrophobic polymer W wafer

Claims (13)

A system for processing a substrate using a block copolymer comprising a first polymer and a second polymer,
A block copolymer coating device for coating the block copolymer on a substrate; a polymer separation device for phase-separating the block copolymer coated on the substrate into the first polymer and the second polymer; A processing station with
A polymer removing device for selectively removing either the first polymer or the second polymer from the phase-separated block copolymer;
A substrate processing system comprising an interface station that is provided adjacent to both of the processing station and the polymer removing apparatus and transfers a substrate between the processing station and the polymer removing apparatus. . The said processing station further has a neutral layer formation apparatus which forms a neutral layer in the board | substrate before apply | coating a block copolymer with the said block copolymer application apparatus, The Claim 1 characterized by the above-mentioned. The substrate processing system as described. The interface station is
Load lock,
A relay transfer mechanism that is arranged in the load lock and transfers a substrate to and from the polymer removing device,
The substrate processing system according to claim 1, wherein the processing station and the polymer removing apparatus are connected via a load lock. The substrate processing according to claim 1, wherein the polymer removing apparatus is a plasma processing apparatus that etches either the first polymer or the second polymer by plasma processing. system. The processing station further includes a solvent supply device that supplies an organic solvent onto the phase-separated block copolymer to selectively remove either the first polymer or the second polymer. The substrate processing system according to claim 4, wherein: A loading / unloading station for loading / unloading a substrate to / from the processing station;
The substrate processing system according to claim 1, wherein the polymer removing apparatus is disposed adjacent to the processing station and the loading / unloading station. The processing station develops the antireflection film forming apparatus that forms an antireflection film on the substrate, a resist coating apparatus that forms a resist film by applying a resist solution to the substrate, and the resist film after the exposure processing The substrate processing system according to claim 6, further comprising a developing device. The substrate processing system according to claim 7, further comprising a substrate inspection device that inspects a substrate from which either the first polymer or the second polymer is removed by the polymer removal device. The substrate processing system according to claim 8, wherein the substrate inspection apparatus is disposed between the carry-in / out station and the polymer removal apparatus. A substrate etching apparatus that etches the substrate using either the first polymer or the second polymer that has not been removed by the polymer removing apparatus as a mask;
The substrate processing system according to claim 7, wherein the etching processing apparatus is disposed between the carry-in / out station and the polymer removing apparatus. The substrate processing system according to claim 10, wherein the etching apparatus etches the substrate by plasma processing. The substrate according to any one of claims 1 to 11, wherein the first polymer is a hydrophilic polymer having hydrophilicity, and the second polymer is a hydrophobic polymer having hydrophobicity. Processing system. The hydrophilic polymer is polymethyl methacrylate;
The substrate processing system according to claim 12, wherein the hydrophobic polymer is polystyrene.

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