JP2014063870A - Semiconductor cooling device - Google Patents

Semiconductor cooling device Download PDF

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Publication number
JP2014063870A
JP2014063870A JP2012207925A JP2012207925A JP2014063870A JP 2014063870 A JP2014063870 A JP 2014063870A JP 2012207925 A JP2012207925 A JP 2012207925A JP 2012207925 A JP2012207925 A JP 2012207925A JP 2014063870 A JP2014063870 A JP 2014063870A
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Prior art keywords
refrigerant
semiconductor
cooling device
cooling
discharge side
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Japanese (ja)
Inventor
Takashi Hozumi
剛史 保住
Shigenobu Matsuzaki
重伸 松崎
Kazuhiro Hayakawa
和宏 早川
Shuji Adachi
修二 足立
Junichi Inoue
潤一 井上
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Nissan Motor Co Ltd
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Nissan Motor Co Ltd
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Priority to JP2012207925A priority Critical patent/JP2014063870A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor cooling device capable of inhibiting the occurrence of stagnation of a refrigerant at the refrigerant discharge side.SOLUTION: A semiconductor cooling device includes: a semiconductor element 20; a metal plate 26 where the semiconductor element 20 is mounted on a first surface and cooling fins 27 are provided on a second surface facing the first surface; and a case 12 which covers the second surface of the metal plate 26 so as to form a refrigerant passage between itself and the second surface of the metal plate 26. A protruding part 30 is provided at an area in the case 12 which is located at the refrigerant discharge side of the refrigerant passage so as to face the cooling fins 27.

Description

本発明は、半導体冷却装置に関する。   The present invention relates to a semiconductor cooling device.

電気自動車（ＥＶ）やハイブリッド自動車（ＨＥＶ）等の駆動モータを制御するために、パワー半導体を用いたインバータが使用されている（例えば、特許文献１参照。）。   In order to control a drive motor such as an electric vehicle (EV) or a hybrid vehicle (HEV), an inverter using a power semiconductor is used (for example, see Patent Document 1).

特許文献１には、伝熱性の高い金属等から構成される放熱板の上面に半導体素子を設置し、半導体素子を設置した面と対向する下面に冷却用フィンを設け、冷却用フィンに水等の冷媒を流して冷却する構成が記載されている。半導体素子から発生した熱は、冷却用フィンを介して冷媒に放熱される。   In Patent Document 1, a semiconductor element is installed on the upper surface of a heat radiating plate made of a metal having high heat conductivity, a cooling fin is provided on the lower surface facing the surface on which the semiconductor element is installed, and water or the like is provided on the cooling fin. The structure which cools by flowing the refrigerant | coolant of is described. Heat generated from the semiconductor element is radiated to the refrigerant through the cooling fins.

特開２０１０−８７０７２号公報JP 2010-87072 A

しかしながら、特許文献１の構成では、冷媒をポンプを用いて循環させるために、ポンプと半導体モジュールとを配管で接続しており、特に、冷媒が半導体モジュールから配管に排出される部分で冷媒の淀みが生じ易い。このため、冷媒の排出側に位置する半導体素子の熱抵抗が増大し、冷却能力が低下してしまうという問題がある。   However, in the configuration of Patent Document 1, in order to circulate the refrigerant using a pump, the pump and the semiconductor module are connected by a pipe, and in particular, the stagnation of the refrigerant at a portion where the refrigerant is discharged from the semiconductor module to the pipe. Is likely to occur. For this reason, there exists a problem that the thermal resistance of the semiconductor element located in the discharge side of a refrigerant | coolant will increase, and cooling capacity will fall.

本発明の目的は、冷媒の排出側における冷媒の淀みの発生を抑制することができる半導体冷却装置を提供することである。   The objective of this invention is providing the semiconductor cooling device which can suppress generation | occurrence | production of the stagnation of the refrigerant | coolant in the discharge side of a refrigerant | coolant.

本発明の一態様によれば、ヒートシンクに設けられた冷却用フィンを冷媒で冷却する構造において、冷媒の排出側のケース内に突起部を設けた半導体冷却装置が提供される。   According to an aspect of the present invention, there is provided a semiconductor cooling device in which a cooling fin provided on a heat sink is cooled with a refrigerant, and a protrusion is provided in a case on the refrigerant discharge side.

本発明によれば、冷媒の排出側における冷媒の淀みの発生を抑制することができる半導体冷却装置を提供することができる。   ADVANTAGE OF THE INVENTION According to this invention, the semiconductor cooling device which can suppress generation | occurrence | production of the stagnation of the refrigerant | coolant in the discharge side of a refrigerant | coolant can be provided.

本発明の第１の実施の形態に係る半導体冷却装置の一例を示す上面図である。It is a top view which shows an example of the semiconductor cooling device which concerns on the 1st Embodiment of this invention. 本発明の第１の実施の形態に係る半導体冷却装置の一例を示す側面図である。It is a side view showing an example of a semiconductor cooling device concerning a 1st embodiment of the present invention. 本発明の第１の実施の形態に係る半導体冷却装置の一例を示す断面図（図１のＡ−Ａ方向の断面図）である。It is sectional drawing (sectional drawing of the AA direction of FIG. 1) which shows an example of the semiconductor cooling device which concerns on the 1st Embodiment of this invention. 本発明の第１の実施の形態に係る半導体冷却装置の突起部及び冷却用フィンの一例を示す断面図（図３のＢ−Ｂ方向の断面図）である。It is sectional drawing (sectional drawing of the BB direction of FIG. 3) which shows an example of the projection part and cooling fin of the semiconductor cooling device which concerns on the 1st Embodiment of this invention. 本発明の第１の実施の形態に係る半導体冷却装置の突起部の斜視図である。It is a perspective view of the projection part of the semiconductor cooling device which concerns on the 1st Embodiment of this invention. 本発明の第１の実施の形態に係る半導体冷却装置の突起部及び冷却用フィンの他の一例を示す断面図である。It is sectional drawing which shows another example of the protrusion part and cooling fin of the semiconductor cooling device which concerns on the 1st Embodiment of this invention. 本発明の第１の実施の形態に係る半導体冷却装置の突起部及び冷却用フィンの更に他の一例を示す断面図である。It is sectional drawing which shows another example of the protrusion part and cooling fin of the semiconductor cooling device which concerns on the 1st Embodiment of this invention. 比較例に係る半導体冷却装置の排出側の冷媒の流れを示す概略図である。It is the schematic which shows the flow of the refrigerant | coolant at the discharge side of the semiconductor cooling device which concerns on a comparative example. 本発明の第１の実施の形態に係る半導体冷却装置の排出側の冷媒の流れを示す概略図である。It is the schematic which shows the flow of the refrigerant | coolant at the discharge side of the semiconductor cooling device which concerns on the 1st Embodiment of this invention. 本発明の第２の実施の形態に係る半導体冷却装置の突起部及び冷却用フィンの一例を示す断面図である。It is sectional drawing which shows an example of the projection part and cooling fin of the semiconductor cooling device which concerns on the 2nd Embodiment of this invention. 本発明の第２の実施の形態に係る半導体冷却装置の排出側の冷媒の流れを示す概略図である。It is the schematic which shows the flow of the refrigerant | coolant at the discharge side of the semiconductor cooling device which concerns on the 2nd Embodiment of this invention. 本発明の第３の実施の形態に係る半導体冷却装置の突起部及び冷却用フィンの一例を示す断面図である。It is sectional drawing which shows an example of the projection part and cooling fin of the semiconductor cooling device which concerns on the 3rd Embodiment of this invention. 本発明の第３の実施の形態に係る半導体冷却装置の突起部及び平坦部の斜視図である。It is a perspective view of the projection part and flat part of the semiconductor cooling device which concerns on the 3rd Embodiment of this invention. 本発明の第４の実施の形態に係る半導体冷却装置の突起部及び平坦部の斜視図である。It is a perspective view of the projection part and flat part of the semiconductor cooling device which concerns on the 4th Embodiment of this invention. 本発明のその他の実施の形態に係る半導体冷却装置の一例を示す断面図である。It is sectional drawing which shows an example of the semiconductor cooling device which concerns on other embodiment of this invention. 本発明のその他の実施の形態に係る半導体冷却装置の突起部及び冷却用フィンの一例を示す断面図（図１５のＤ−Ｄ方向の断面図）である。It is sectional drawing (sectional drawing of the DD direction of FIG. 15) which shows an example of the protrusion part and cooling fin of the semiconductor cooling device which concerns on other embodiment of this invention. 本発明のその他の実施の形態に係る半導体冷却装置の突起部及び冷却用フィンの他の一例を示す断面図（図１５のＤ−Ｄ方向の断面図）である。It is sectional drawing (cross-sectional view of the DD direction of FIG. 15) which shows another example of the protrusion part of the semiconductor cooling device which concerns on other embodiment of this invention, and a cooling fin. 本発明のその他の実施の形態に係る半導体冷却装置の突起部の一例を示す斜視図である。It is a perspective view which shows an example of the protrusion part of the semiconductor cooling device which concerns on other embodiment of this invention.

次に、図面を参照して、本発明の第１〜第４の実施の形態を説明する。以下の図面の記載において、同一又は類似の部分には同一又は類似の符号を付している。但し、図面は模式的なものであり、厚みと平面寸法との関係、各層の厚みの比率等は現実のものとは異なることに留意すべきである。したがって、具体的な厚みや寸法は以下の説明を参酌して判断すべきものである。また、図面相互間においても互いの寸法の関係や比率が異なる部分が含まれていることはもちろんである。また、以下に示す第１〜第４の実施の形態は、この発明の技術的思想を具体化するための装置や方法を例示するものであって、この発明の技術的思想は、構成部品の材質、形状、構造、配置等を下記のものに特定するものでない。この発明の技術的思想は、特許請求の範囲において、種々の変更を加えることができる。   Next, first to fourth embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio of the thickness of each layer, and the like are different from the actual ones. Therefore, specific thicknesses and dimensions should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings. Further, the following first to fourth embodiments exemplify apparatuses and methods for embodying the technical idea of the present invention, and the technical idea of the present invention includes components. The material, shape, structure, arrangement, etc. are not specified below. The technical idea of the present invention can be variously modified within the scope of the claims.

（第１の実施の形態）
本発明の実施の形態に係る半導体冷却装置の一例として、車載用のインバータ装置を説明する。本発明の実施の形態に係る半導体冷却装置は、図１に示すように、冷却流路部品（ケース）１２と、ケース１２上に複数のボルト１３により固定された半導体装置（半導体モジュール）１１を備える。 (First embodiment)
An in-vehicle inverter device will be described as an example of a semiconductor cooling device according to an embodiment of the present invention. As shown in FIG. 1, a semiconductor cooling device according to an embodiment of the present invention includes a cooling flow path component (case) 12 and a semiconductor device (semiconductor module) 11 fixed on the case 12 by a plurality of bolts 13. Prepare.

ケース１２の側面には、図２に示すように冷媒入口１４が設けられている。図示を省略するが、冷媒入口１４が設けられた側面と反対側の側面には冷媒出口が設けられている。   As shown in FIG. 2, a refrigerant inlet 14 is provided on the side surface of the case 12. Although illustration is omitted, a refrigerant outlet is provided on the side opposite to the side where the refrigerant inlet 14 is provided.

半導体装置１１は、図３に示すように、半導体素子２０と、半導体素子２０の下面に接合部材２１を介して接合された導体パターン２２と、導体パターン２２の下面に接合された絶縁板２３と、絶縁板２３の下面に接合された導体パターン２４と、導体パターン２４の下面に接合部材２５を介して接合された金属プレート（ヒートシンク）２６とを備える。金属プレート２６の上面には、半導体素子２０を覆うように筐体１６が配置されている。   As shown in FIG. 3, the semiconductor device 11 includes a semiconductor element 20, a conductor pattern 22 bonded to the lower surface of the semiconductor element 20 via a bonding member 21, and an insulating plate 23 bonded to the lower surface of the conductor pattern 22. And a conductive pattern 24 bonded to the lower surface of the insulating plate 23, and a metal plate (heat sink) 26 bonded to the lower surface of the conductive pattern 24 via a bonding member 25. The housing 16 is disposed on the upper surface of the metal plate 26 so as to cover the semiconductor element 20.

半導体素子２０としては、絶縁ゲートバイポーラトランジスタ（ＩＧＢＴ）やフリーホイーリングダイオード（ＦＷＤ）等の種々のパワー半導体が使用可能である。接合部材２１，２５としては、はんだ等が使用可能である。導体パターン２２，２４は、例えば銅（Ｃｕ）等からなり、電気的配線部材及び放熱部材を兼ねている。絶縁板２３としては、アルミナ（Ａｌ２Ｏ３）、窒化アルミニウム（ＡｌＮ）又は窒化ケイ素（Ｓｉ３Ｎ４）等が使用可能である。導体パターン２２、２４及び絶縁板２３により絶縁基板（配線基板）が構成されている。 As the semiconductor element 20, various power semiconductors such as an insulated gate bipolar transistor (IGBT) and a free wheeling diode (FWD) can be used. As the joining members 21 and 25, solder or the like can be used. The conductor patterns 22 and 24 are made of, for example, copper (Cu), and also serve as an electrical wiring member and a heat dissipation member. As the insulating plate 23, alumina (Al 2 O 3 ), aluminum nitride (AlN), silicon nitride (Si 3 N 4 ), or the like can be used. The conductive patterns 22 and 24 and the insulating plate 23 constitute an insulating substrate (wiring substrate).

金属プレート２６は、銅（Ｃｕ）やアルミニウム（Ａｌ）等からなる。金属プレート２６の下面には複数の円筒形状の冷却用フィン２７がマトリクス状に形成されている。冷却用フィン２７は、例えば直径が２ｍｍ、長さが８ｍｍであり、隣接する冷却用フィン２７との間隔は例えば４．５ｍｍである。冷却用フィン２７の形状、サイズ、数及び配列のパターンは特に限定されず適宜選択可能である。冷却用フィン２７付きの金属プレート２６は、冷却用フィン２７を別途ろう付けする工法や、冷却用フィン２７を切削加工で削り出す工法等により製作することができる。   The metal plate 26 is made of copper (Cu), aluminum (Al), or the like. On the lower surface of the metal plate 26, a plurality of cylindrical cooling fins 27 are formed in a matrix. The cooling fins 27 have, for example, a diameter of 2 mm and a length of 8 mm, and the distance between adjacent cooling fins 27 is, for example, 4.5 mm. The shape, size, number, and arrangement pattern of the cooling fins 27 are not particularly limited and can be appropriately selected. The metal plate 26 with the cooling fins 27 can be manufactured by a method of separately brazing the cooling fins 27, a method of cutting the cooling fins 27 by cutting, or the like.

金属プレート２６の下面には、冷却用フィン２７の周囲を覆うようにアルミニウム（Ａｌ）等からなるケース１２が接合されている。ケース１２は、冷媒入口１４及び冷媒出口１５を有し、金属プレート２６との間で冷却水等の冷媒の流路１９を形成する。   A case 12 made of aluminum (Al) or the like is joined to the lower surface of the metal plate 26 so as to cover the periphery of the cooling fins 27. The case 12 has a refrigerant inlet 14 and a refrigerant outlet 15, and forms a refrigerant flow path 19 such as cooling water with the metal plate 26.

図３に矢印で示すように、冷媒入口１４から供給された冷媒は、流路１９において冷却用フィン２７の間を流れ、冷媒出口１５から排出される。ここで、冷媒入口１４から冷媒出口１５へ向かう方向（矢印の方向）を「冷媒の流れ方向」と定義する。   As indicated by arrows in FIG. 3, the refrigerant supplied from the refrigerant inlet 14 flows between the cooling fins 27 in the flow path 19 and is discharged from the refrigerant outlet 15. Here, the direction from the refrigerant inlet 14 toward the refrigerant outlet 15 (the direction of the arrow) is defined as the “flow direction of the refrigerant”.

冷媒入口１４には、冷媒を供給するためのポンプ（冷媒供給手段）１７が配管を介して接続されている。冷媒出口１５には、冷媒を冷却するためのラジエータ１８が配管を介して接続され、ラジエータ１８にはポンプ１７が接続される。ラジエータ１８で冷却された冷媒はポンプ１７を用いて冷媒入口１４に循環的に供給される。   A pump (refrigerant supply means) 17 for supplying a refrigerant is connected to the refrigerant inlet 14 via a pipe. A radiator 18 for cooling the refrigerant is connected to the refrigerant outlet 15 via a pipe, and a pump 17 is connected to the radiator 18. The refrigerant cooled by the radiator 18 is circulated to the refrigerant inlet 14 using the pump 17.

金属プレート２６とケース１２の接触部には、冷媒の漏れを防止するため、ＯリングやＦＩＰＧ（Formed In Place Gasket）等のシール材２８が挟み込まれている。ケース１２の金属プレート２６との接触部分は、シール材２８の反力によるケース１２の撓みを防止するために肉厚の厚さＴ１（例えば８ｍｍ）の段差部２９となる。   A sealing material 28 such as an O-ring or FIPG (Formed In Place Gasket) is sandwiched between contact portions of the metal plate 26 and the case 12 in order to prevent refrigerant leakage. A contact portion of the case 12 with the metal plate 26 becomes a stepped portion 29 having a thickness T1 (for example, 8 mm) in order to prevent the case 12 from being bent by the reaction force of the sealing material 28.

図４及び図５に示すように、冷媒の排出側のケース１２内、即ち段差部２９の側面には、冷媒の排出側（最下流側）に位置する冷却用フィン２７の側面に対向するように突起部３０が設けられている。本発明の第１の実施の形態においては、冷媒の流れ方向において、突起部３０間の凹部３１が、冷媒の排出側（最下流側）に位置する冷却用フィン２７に重なる位置にある。冷媒の流れ方向における突起部３０の寸法Ｄ１は例えば２ｍｍである。寸法Ｄ１は、段差部２９の寸法Ｄ０に対して同等以下であっても良く、寸法Ｄ０より大きくても良い。突起部３０の幅は、例えば冷却用フィン２７間の間隔と同等であっても良い。突起部３０の数、幅及び間隔等は特に限定されず、冷却用フィン２７の数や直径、間隔等に応じて適宜変更可能である。突起部３０は、例えば切削加工等により形成することができる。   As shown in FIGS. 4 and 5, the case 12 on the refrigerant discharge side, that is, the side surface of the stepped portion 29, faces the side surface of the cooling fin 27 located on the refrigerant discharge side (the most downstream side). A protrusion 30 is provided on the surface. In the first embodiment of the present invention, the recess 31 between the protrusions 30 is in a position overlapping the cooling fin 27 located on the refrigerant discharge side (the most downstream side) in the refrigerant flow direction. The dimension D1 of the protrusion 30 in the refrigerant flow direction is, for example, 2 mm. The dimension D1 may be equal to or less than the dimension D0 of the step portion 29, and may be larger than the dimension D0. The width of the protrusion 30 may be equal to the interval between the cooling fins 27, for example. The number, width, interval, and the like of the protrusions 30 are not particularly limited, and can be appropriately changed according to the number, diameter, interval, and the like of the cooling fins 27. The protrusion 30 can be formed by, for example, cutting.

なお、図４及び図５に示すように突起部３０が円柱状の場合を主に説明するが、突起部３０の形状は特に限定されない。例えば図６に示すように三角柱状の突起部３０ａであっても良く、図７に示すように曲面を有する突起部３０ｂであっても良い。   In addition, although the case where the protrusion part 30 is cylindrical shape is mainly demonstrated as shown in FIG.4 and FIG.5, the shape of the protrusion part 30 is not specifically limited. For example, it may be a triangular prism-shaped protrusion 30a as shown in FIG. 6, or may be a protrusion 30b having a curved surface as shown in FIG.

ここで、比較例として、段差部２９に突起部が設けられていない場合を説明する。図８において、突起部が設けられていない段差部２９付近における冷媒の流れを矢印で示す。図８に示すように、冷媒の排出側（最下流側）に位置する冷却用フィン２７間を通過した冷媒は、段差部２９に当り、冷媒流れ方向と逆方向に流れる。このため、冷却用フィン２７の背面の領域Ａにおいて冷媒の淀みが生じる。   Here, as a comparative example, a case where no protrusion is provided on the stepped portion 29 will be described. In FIG. 8, the flow of the refrigerant in the vicinity of the stepped portion 29 where no protrusion is provided is indicated by an arrow. As shown in FIG. 8, the refrigerant that has passed between the cooling fins 27 located on the refrigerant discharge side (the most downstream side) hits the stepped portion 29 and flows in the direction opposite to the refrigerant flow direction. For this reason, stagnation of the refrigerant occurs in the area A on the back surface of the cooling fin 27.

これに対して、本発明の第１の実施の形態においては、図４及び図５に示すように、冷媒の排出側のケース１２内に、冷却用フィン２７に対向するように突起部３０を設けている。よって、図９に矢印で示すように、最下流側に位置する冷却用フィン２７の間を通過した冷媒が、突起部３０間の凹部３１に流れるように制御される。凹部３１が冷却用フィン２７背面に位置するため、冷媒は冷却用フィン２７背面にも流れ込むので、冷却用フィン２７背面には淀みが発生しなくなる。   On the other hand, in the first embodiment of the present invention, as shown in FIGS. 4 and 5, the protrusion 30 is provided in the case 12 on the refrigerant discharge side so as to face the cooling fin 27. Provided. Therefore, as indicated by an arrow in FIG. 9, the refrigerant that has passed between the cooling fins 27 located on the most downstream side is controlled to flow into the recesses 31 between the protrusions 30. Since the recess 31 is located on the back surface of the cooling fin 27, the refrigerant also flows into the back surface of the cooling fin 27, so that no stagnation occurs on the back surface of the cooling fin 27.

以上説明したように、本発明の第１の実施の形態によれば、冷媒の排出側（下流側）のケース１２内に、冷却用フィン２７に対向するように突起部３０を設けることにより、冷媒の排出側（下流側）の冷媒の淀みの発生を抑制することができる。この結果、半導体素子２０の熱抵抗の増大を抑制することができる。   As described above, according to the first embodiment of the present invention, by providing the protrusion 30 in the case 12 on the refrigerant discharge side (downstream side) so as to face the cooling fin 27, Generation of stagnation of the refrigerant on the refrigerant discharge side (downstream side) can be suppressed. As a result, an increase in the thermal resistance of the semiconductor element 20 can be suppressed.

特に、冷媒の流れ方向において突起部３０間の凹部３１が最下流側に位置する冷却用フィン２７に重なる位置にあることにより、冷媒が冷却用フィン２７背面に流れるので、冷却用フィン２７の背面の冷媒の淀みの発生を抑制することができる。   In particular, since the recess 31 between the protrusions 30 in the coolant flow direction is positioned so as to overlap the cooling fin 27 located on the most downstream side, the coolant flows to the back surface of the cooling fin 27. The generation of stagnation of the refrigerant can be suppressed.

（第２の実施の形態）
本発明の第２の実施の形態に係る半導体冷却装置は、図１０に示すように、冷媒の流れ方向において、突起部３０が冷媒の排出側（最下流側）に位置する冷却用フィン２７と重なる位置にある点が、第１の実施の形態と異なる。突起部３０の冷却用フィン２７と対向する面の幅は、例えば冷却用フィン２７の直径と同等であっても良い。本発明の第２の実施の形態に係る半導体冷却装置の他の構成は、第１の実施の形態に係る半導体冷却装置の構成と実質的に同様であるので、重複した説明を省略する。 (Second Embodiment)
As shown in FIG. 10, the semiconductor cooling device according to the second embodiment of the present invention includes a cooling fin 27 in which the protrusion 30 is located on the refrigerant discharge side (the most downstream side) in the refrigerant flow direction. The point which exists in the overlapping position differs from 1st Embodiment. The width of the surface of the protrusion 30 facing the cooling fin 27 may be equal to the diameter of the cooling fin 27, for example. Since the other configuration of the semiconductor cooling device according to the second embodiment of the present invention is substantially the same as the configuration of the semiconductor cooling device according to the first embodiment, a duplicate description is omitted.

図１１において段差部２９付近における冷媒の流れを矢印で示す。図１１に示すように、最下流側に位置する冷却用フィン２７の間を通過した冷媒は、突起部３０間の凹部３１に流れ込む。冷却用フィン２７背面には突起部３０が位置しており、冷媒が冷却用フィン２７背面に流れ込む隙間がないため、冷却用フィン２７背面の淀みの発生を抑制することができる。   In FIG. 11, the flow of the refrigerant in the vicinity of the stepped portion 29 is indicated by an arrow. As shown in FIG. 11, the refrigerant that has passed between the cooling fins 27 located on the most downstream side flows into the recesses 31 between the protrusions 30. Since the protrusion 30 is located on the back surface of the cooling fin 27 and there is no gap for the refrigerant to flow into the back surface of the cooling fin 27, the occurrence of stagnation on the back surface of the cooling fin 27 can be suppressed.

本発明の第２の実施の形態によれば、第１の実施の形態と同様に、冷媒の排出側（下流側）のケース１２内に、冷却用フィン２７に対向するように突起部３０を設けることにより、冷媒の排出側（下流側）の冷媒の淀みの発生を抑制することができる。したがって、半導体素子２０の熱抵抗の増大を抑制することができる。   According to the second embodiment of the present invention, similarly to the first embodiment, the protrusion 30 is provided in the case 12 on the refrigerant discharge side (downstream side) so as to face the cooling fin 27. By providing, generation | occurrence | production of the stagnation of the refrigerant | coolant at the discharge side (downstream side) of a refrigerant | coolant can be suppressed. Therefore, an increase in the thermal resistance of the semiconductor element 20 can be suppressed.

特に、冷媒の流れ方向において、突起部３０が冷媒の排出側（最下流側）に位置する冷却用フィン２７と重なる位置にあることにより、冷媒が冷却用フィン２７背面に流入しなくなり、冷却用フィン２７背面の冷媒の淀みの発生を抑制することができる。   In particular, in the refrigerant flow direction, the protrusion 30 is positioned so as to overlap with the cooling fins 27 located on the refrigerant discharge side (the most downstream side), so that the refrigerant does not flow into the back surface of the cooling fins 27 and is used for cooling. Generation | occurrence | production of the stagnation of the refrigerant | coolant of the fin 27 back surface can be suppressed.

（第３の実施の形態）
本発明の第３の実施の形態に係る半導体冷却装置は、図１２及び図１３に示すように、ケース１２に設けられた突起部３０の上部（水密部側）において、突起部３０間を埋めるように平坦部３２を設ける点が、第１の実施の形態と異なる。冷媒の流れ方向における平坦部３２の寸法Ｄ３は、突起部３０の寸法Ｄ１と同等以下であり、段差部２９の厚さ方向における平坦部３２の寸法Ｄ４は、突起部３０の寸法Ｄ２より小さい。本発明の第３の実施の形態に係る半導体冷却装置の他の構成は、第１の実施の形態に係る半導体冷却装置の構成と実質的に同様であるので、重複した説明を省略する。 (Third embodiment)
As shown in FIGS. 12 and 13, the semiconductor cooling device according to the third embodiment of the present invention fills the gaps between the protrusions 30 on the upper part (watertight side) of the protrusions 30 provided on the case 12. Thus, the point which provides the flat part 32 differs from 1st Embodiment. The dimension D3 of the flat part 32 in the refrigerant flow direction is equal to or smaller than the dimension D1 of the protrusion part 30, and the dimension D4 of the flat part 32 in the thickness direction of the step part 29 is smaller than the dimension D2 of the protrusion part 30. Since the other configuration of the semiconductor cooling device according to the third embodiment of the present invention is substantially the same as the configuration of the semiconductor cooling device according to the first embodiment, a duplicate description is omitted.

本発明の第３の実施の形態によれば、第１の実施の形態と同様に、冷媒の排出側（下流側）のケース１２内に、冷却用フィン２７に対向するように突起部３０を設けることにより、冷媒の排出側（下流側）の冷媒の淀みの発生を抑制することができる。したがって、半導体素子２０の熱抵抗の増大を抑制することができる。   According to the third embodiment of the present invention, similarly to the first embodiment, the protrusion 30 is provided in the case 12 on the refrigerant discharge side (downstream side) so as to face the cooling fin 27. By providing, generation | occurrence | production of the stagnation of the refrigerant | coolant at the discharge side (downstream side) of a refrigerant | coolant can be suppressed. Therefore, an increase in the thermal resistance of the semiconductor element 20 can be suppressed.

更に、第１の実施の形態と同様に、冷媒の流れ方向において突起部３０間の凹部３１が最下流側に位置する冷却用フィン２７に重なる位置にあることにより、冷媒が最下流側に位置する冷却用フィン２７背面に流れる。したがって、冷却用フィン２７背面の冷媒の淀みの発生を抑制することができる。   Further, as in the first embodiment, the recess 31 between the protrusions 30 in the coolant flow direction is positioned so as to overlap the cooling fin 27 positioned on the most downstream side, so that the coolant is positioned on the most downstream side. Flows to the back of the cooling fins 27. Therefore, it is possible to suppress the occurrence of stagnation of the refrigerant on the back surface of the cooling fin 27.

更に、突起部３０の上部において突起部３０間を埋めるように平坦部３２を設けることにより、ケース１２と金属プレート２６との接触面積が増大するので、ケース１２と金属プレート２６との水密性を向上させることができる。   Further, by providing the flat portion 32 so as to fill the space between the protrusions 30 at the upper part of the protrusions 30, the contact area between the case 12 and the metal plate 26 is increased, so that the watertightness between the case 12 and the metal plate 26 is improved. Can be improved.

（第４の実施の形態）
本発明の第４の実施の形態に係る半導体冷却装置は、図１４に示すように、平坦部３２の下端の凹部３１に、金属プレート２６から離れるにつれて冷媒の排出側に傾斜するようにテーパを設ける点が、第３の実施の形態と異なる。本発明の第４の実施の形態に係る半導体冷却装置の他の構成は、第３の実施の形態に係る半導体冷却装置の構成と実質的に同様であるので、重複した説明を省略する。 (Fourth embodiment)
In the semiconductor cooling device according to the fourth embodiment of the present invention, as shown in FIG. 14, the concave portion 31 at the lower end of the flat portion 32 is tapered so as to incline toward the refrigerant discharge side as the distance from the metal plate 26 increases. The point of providing is different from the third embodiment. Since the other configuration of the semiconductor cooling device according to the fourth embodiment of the present invention is substantially the same as the configuration of the semiconductor cooling device according to the third embodiment, a duplicate description is omitted.

本発明の第４の実施の形態によれば、第１の実施の形態と同様に、冷媒の排出側（下流側）のケース１２内に、冷却用フィン２７に対向するように突起部３０を設けることにより、冷媒の排出側（下流側）の冷媒の淀みの発生を抑制することができる。したがって、半導体素子２０の熱抵抗の増大を抑制することができる。   According to the fourth embodiment of the present invention, similar to the first embodiment, the protrusion 30 is provided in the case 12 on the refrigerant discharge side (downstream side) so as to face the cooling fins 27. By providing, generation | occurrence | production of the stagnation of the refrigerant | coolant at the discharge side (downstream side) of a refrigerant | coolant can be suppressed. Therefore, an increase in the thermal resistance of the semiconductor element 20 can be suppressed.

更に、第３の実施の形態と同様に、突起部３０の上部において突起部３０間を埋めるように平坦部３２を設けることにより、金属プレート２６と段差部２９との接触面積（シール面積）を増大させることができる。したがって、金属プレート２６と段差部２９との水密性を向上させることができる。   Further, similarly to the third embodiment, by providing a flat portion 32 so as to fill the space between the protrusions 30 above the protrusions 30, the contact area (seal area) between the metal plate 26 and the stepped portion 29 can be reduced. Can be increased. Therefore, the water tightness between the metal plate 26 and the stepped portion 29 can be improved.

更に、凹部３１にテーパを設けることにより、凹部３１に流入した冷媒がテーパに従って流れるため、冷媒を滑らかに流すことができる。   Further, by providing the recess 31 with a taper, the refrigerant flowing into the recess 31 flows according to the taper, so that the refrigerant can flow smoothly.

（その他の実施の形態）
上記のように、本発明は第１〜第４の実施の形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかとなろう。 (Other embodiments)
As described above, the present invention has been described according to the first to fourth embodiments. However, it should not be understood that the description and drawings constituting a part of this disclosure limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

本発明の第１〜第４の実施の形態においては、円筒形状の冷却用フィン２７がマトリクス状に配置された場合を説明したが、冷却用フィン２７の形状及び配置は特に限定されない。例えば、図１５に示すように、冷却用フィン２７ａがブレードフィン型（板状）のフィンであっても良い。この場合、例えば図１６に示すように、冷媒の流れ方向において突起部３０間の凹部３１が冷却用フィン２７ａの端部と重なる位置にあっても良い。これにより、第１の実施の形態と同様に、冷媒は冷却用フィン２７ａの背面に流れ込むので、冷却用フィン２７ａの背面に淀みが発生することを抑制することができる。   In the first to fourth embodiments of the present invention, the case where the cylindrical cooling fins 27 are arranged in a matrix has been described, but the shape and arrangement of the cooling fins 27 are not particularly limited. For example, as shown in FIG. 15, the cooling fins 27a may be blade fin type (plate-shaped) fins. In this case, for example, as shown in FIG. 16, the recess 31 between the protrusions 30 may be in a position overlapping the end of the cooling fin 27 a in the coolant flow direction. Thereby, similarly to 1st Embodiment, since a refrigerant | coolant flows into the back surface of the cooling fin 27a, it can suppress that a stagnation generate | occur | produces in the back surface of the cooling fin 27a.

また、図１７に示すように、冷媒の流れ方向において、突起部３０が、冷却用フィン２７ａの端部と重なる位置にあっても良い。これにより、第２の実施の形態と同様に、冷却用フィン２７ａ背面に冷媒が流れ込まず、冷却用フィン２７ａの背面に淀みが発生することを抑制することができる。   Further, as shown in FIG. 17, the protrusion 30 may be in a position overlapping the end of the cooling fin 27 a in the refrigerant flow direction. Thereby, similarly to 2nd Embodiment, it can suppress that a refrigerant | coolant does not flow into the back surface of the fin 27a for cooling, and a stagnation generate | occur | produces on the back surface of the fin 27a for cooling.

また、第４の実施の形態において、平坦部３２の下側の凹部３１がテーパを有する場合を説明したが、突起部３０の上部に平坦部が設けられていなくても良い。即ち、図１８に示すように、平坦部が設けられていない構造において、突起部３０間の凹部３１が、金属プレート２６から離れにつれて冷媒の排出側に傾斜するテーパを有していても良い。これにより、第４の実施の形態と同様に、冷媒がテーパに従って流れるため、冷媒を滑らかに流すことができる。   Further, in the fourth embodiment, the case where the concave portion 31 on the lower side of the flat portion 32 has a taper has been described, but the flat portion may not be provided on the upper portion of the protruding portion 30. That is, as shown in FIG. 18, in a structure in which no flat portion is provided, the recess 31 between the protrusions 30 may have a taper that inclines toward the refrigerant discharge side as the distance from the metal plate 26 increases. Thereby, since a refrigerant | coolant flows according to a taper similarly to 4th Embodiment, a refrigerant | coolant can be poured smoothly.

このように、本発明はここでは記載していない様々な実施の形態等を含むことは勿論である。したがって、本発明の技術的範囲は上記の説明から妥当な特許請求の範囲に係る発明特定事項によってのみ定められるものである。   As described above, the present invention naturally includes various embodiments not described herein. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

１２…ケース（冷却流路部品）
１７…ポンプ（冷媒供給手段）
１９…流路
２０…半導体素子
２６…金属プレート（ヒートシンク）
２７，２７ａ…冷却用フィン
３０，３０ａ，３０ｂ…突起部
３１…凹部
３２…平坦部 12 ... Case (cooling channel parts)
17 ... Pump (refrigerant supply means)
19 ... Flow path 20 ... Semiconductor element 26 ... Metal plate (heat sink)
27, 27a ... Cooling fins 30, 30a, 30b ... Projection 31 ... Recess 32 ... Flat part

Claims (5)

半導体素子と、
前記半導体素子を第一の面に搭載し、前記第一の面と対向する第二の面に冷却用フィンを設けたヒートシンクと、
前記ヒートシンクとの間で冷媒の流路を形成するように、前記ヒートシンクの第二の面を覆うケースとを備え、
前記ヒートシンクより冷媒の排出側の前記ケース内に、前記冷却用フィンと対向するように突起部を設けたことを特徴とする半導体冷却装置。 A semiconductor element;
A heat sink in which the semiconductor element is mounted on a first surface, and a cooling fin is provided on a second surface facing the first surface;
A case that covers the second surface of the heat sink so as to form a refrigerant flow path with the heat sink;
A semiconductor cooling device, wherein a protrusion is provided in the case on the refrigerant discharge side of the heat sink so as to face the cooling fin. 前記冷媒の流れ方向において、前記突起部間の凹部が、前記冷媒の排出側に位置する前記冷却用フィンと重なる位置にあることを特徴とする請求項１に記載の半導体冷却装置。   2. The semiconductor cooling device according to claim 1, wherein in the flow direction of the refrigerant, a recess between the protrusions is located at a position overlapping the cooling fin located on the discharge side of the refrigerant. 前記冷媒の流れ方向において、前記突起部が、前記冷媒の排出側に位置する前記冷却用フィンと重なる位置にあることを特徴とする請求項１に記載の半導体冷却装置。   2. The semiconductor cooling device according to claim 1, wherein in the flow direction of the refrigerant, the protrusion is located at a position overlapping the cooling fin located on the discharge side of the refrigerant. 前記突起部の上部において前記突起部間の凹部を埋めるように平坦部が設けられていることを特徴とする請求項１〜３のいずれか１項に記載の半導体冷却装置。   The semiconductor cooling device according to claim 1, wherein a flat portion is provided at an upper portion of the protrusion so as to fill a recess between the protrusions. 前記突起部間の凹部が、前記ヒートシンクから離れにつれて前記冷媒の排出側に傾斜するテーパを有することを特徴とする請求項１〜４のいずれか１項に記載の半導体冷却装置。   5. The semiconductor cooling device according to claim 1, wherein the recesses between the protrusions have a taper that inclines toward the discharge side of the coolant as the distance from the heat sink increases.
JP2012207925A 2012-09-21 2012-09-21 Semiconductor cooling device Pending JP2014063870A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015156422A1 (en) * 2015-04-28 2015-10-15 株式会社小松製作所 Cooling housing for electronic device, electronic device, and construction machine
JP2015214738A (en) * 2014-05-13 2015-12-03 株式会社東芝 Corrosion resistant metal member, heat sink for power device, rotating blade for generator and manufacturing method of corrosion resistant metal member
US11856740B2 (en) 2020-12-14 2023-12-26 Honda Motor Co., Ltd. Heat radiating cooler with recessed traps for coolant

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015214738A (en) * 2014-05-13 2015-12-03 株式会社東芝 Corrosion resistant metal member, heat sink for power device, rotating blade for generator and manufacturing method of corrosion resistant metal member
WO2015156422A1 (en) * 2015-04-28 2015-10-15 株式会社小松製作所 Cooling housing for electronic device, electronic device, and construction machine
US11856740B2 (en) 2020-12-14 2023-12-26 Honda Motor Co., Ltd. Heat radiating cooler with recessed traps for coolant

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