JP2014060403A - Substrate holder and wafer support method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which uniformly processes all substrate surfaces when surface treatment is simultaneously performed on the multiple substrates, and to provide a substrate processing method.SOLUTION: A substrate holder 120 includes a top plate 124, a bottom plate 128, and multiple support pillars 125 and holds multiple substrates 112 in a lamination manner with spaces formed therebetween. The substrates are placed on the substrate holder where inclined grooves 129 are formed in the support pillars. A gas is supplied to the substrates placed on inclined surfaces from multiple gas introduction ports installed at an interval narrower than an interval between the inclined surfaces to perform treatment on surfaces of the substrates.

Description

  The present invention relates to a substrate processing apparatus for processing a substrate, and a substrate processing method using the apparatus.

Conventionally, when a thin film made of SiO ₂ , Poly-Si, Si ₃ N ₄ or the like is formed on a semiconductor wafer, there is a CVD method in which a reactive gas containing a thin film material is supplied to the wafer surface for reaction. Used mainly. FIG. 7 schematically shows a configuration of a conventional CVD apparatus 10 used when forming a thin film on the wafer surface. In the CVD apparatus 10, a quartz boat 70 on which a plurality of wafers 80 are horizontally mounted at equal intervals is accommodated in the quartz reaction tube 20 by a loading device 60 in accordance with a command from the controller 40. When the quartz boat 70 is accommodated in the quartz reaction tube 20, the furnace port cap 61 and the furnace port portion 23 are brought into close contact with each other, whereby the wafer 80 is sealed in the quartz reaction tube 20 and blocked from the outside air. Thereafter, the inside of the quartz reaction tube 20 is maintained at a predetermined temperature by the heater 30 that has received a command from the controller 40, and the gas reaction port 20 receives a command from the controller 40 through the gas introduction port 21. A source gas is introduced into the quartz reaction tube 20. The source gas introduced into the quartz reaction tube 20 reaches the surface of the wafer 80 by convection and diffusion in the quartz reaction tube 20 and reacts there to form a thin film. By-products and unreacted gas generated during the formation of the thin film are exhausted from the quartz reaction tube 20 through the exhaust port 22 together with the carrier gas.

  Here, in the CVD apparatus 10, the source gas introduced into the quartz reaction tube 20 from the gas introduction port 21 provided at the lower portion of the quartz reaction tube 20 is diffused to the surroundings while rising by convection in the quartz reaction tube 20. I will do it. Therefore, in the vicinity of the ceiling of the quartz reaction tube 20, the concentration of the raw material gas is reduced and the film formation rate is reduced, or in the gap between the wafers 80, the raw material gas cannot be sufficiently diffused and the concentration becomes non-uniform. I was doing it. In order to reduce the partial shading of the source gas in the quartz reaction tube 20, a nozzle reaching the ceiling of the quartz reaction tube 20 is attached to the gas introduction port 21, or a quartz boat 70 is formed during the formation of a thin film. Was rotating. In Patent Document 1, a positioning mechanism for positioning a wafer is provided on a quartz boat, and the wafer is inclined by a predetermined angle so as to come into contact with the positioning mechanism.

Japanese Patent Laid-Open No. 6-268048

  However, the nozzle that reaches the vicinity of the ceiling of the quartz reaction tube 20 is attached to the gas introduction port 21 as described above, the quartz boat 70 is rotated during the formation of the thin film, and the quartz boat is provided with a positioning mechanism to place the wafer at a predetermined angle. Even if it is only tilted, there is no change in the source gas concentration due to convection and diffusion in the gap between the wafers mounted on the quartz boat. It could not be said that it was solved.

  An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of uniformly processing the surfaces of all the substrates when simultaneously surface-treating a plurality of substrates.

  According to one aspect of the present invention, a substrate holder that tilts and holds a plurality of substrates at an interval, a plurality of gas inlets that are installed at intervals narrower than the interval between the substrates, A substrate processing apparatus is provided.

  According to another aspect of the present invention, a substrate disposing step of disposing a substrate on the inclined surface of a substrate holder having a plurality of inclined surfaces, and an interval between the inclined surfaces on the substrate disposed on the inclined surface. There is provided a substrate processing method including a substrate surface processing step of processing the surface of the substrate by supplying gas from a plurality of gas introduction ports installed at narrower intervals.

  According to the substrate processing apparatus and the substrate processing method according to the present invention, the gas is supplied to the substrate from the plurality of gas inlets installed at intervals narrower than the interval between the substrates. Surely supplied. In addition, since the substrate holder tilts and holds a plurality of substrates at an interval, the gas stream ejected from the gas inlet collides with the surface of the substrate and changes its direction or diffuses. To do. Therefore, according to the substrate processing apparatus and the substrate processing method of the present invention, the surfaces of all the substrates can be processed uniformly.

It is a schematic diagram which shows the structure of the substrate processing apparatus which concerns on one Embodiment of this invention. (A) is a top view which shows the structure of the quartz boat of FIG. 1, (b) is sectional drawing which follows the AA chain line in (a). (A) is a front view which shows the structure of the upper part of the reactor of FIG. 1, (b) is a bottom view of the reactor of (a). (A) is a conceptual diagram which shows the relationship between the space | interval between wafers and the space | interval between gas inlets which concerns on one Embodiment of this invention, (b) is a quartz boat rotated 180 degrees from the state of (a). It is a conceptual diagram which shows a state. (A) is a top view which shows the structure of the quartz boat which concerns on other embodiment of this invention, (b) is a front view of the quartz boat of (a). It is a front view which shows the structure of the quartz boat which concerns on the modification of one Embodiment of this invention. It is a schematic diagram which shows the structure of the conventional CVD apparatus.

<One Embodiment of the Present Invention>
Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

(1) Configuration of the Substrate Processing Apparatus 100 According to the Present Embodiment The substrate processing apparatus 100 according to the present embodiment is constructed in an airtight chamber structure as shown in FIG. 1, and has a pod stage 110 and a pod 111 inside thereof. Pod opener 113, transfer robot 115, quartz boat 120, cap 121, flange 122, quartz boat rotating device 123, driving device 130, arm 131, gas unit 140, reaction tube 150, soaking tube 160, heater 161 for heating , And a controller 170. The pod 111 is a carrier that stores a plurality of unprocessed or processed wafers 112 in a sealed state. The pod 111 has an opening for storing and taking out the wafer 112, and the pod 111 is sealed by fitting a sealing door into the opening.

  The substrate processing apparatus 100 has a pod loading / unloading port (not shown) for loading a pod 111 storing an unprocessed wafer 112 or unloading a pod 111 storing a processed wafer 112 on the pod stage 110. It is prepared in the vicinity. The pod 111 carried into the substrate processing apparatus 100 through the pod loading / unloading port is disposed on the pod stage 110. The pod 111 disposed on the pod stage 110 is unlocked by moving the pod opener 113 while holding the hermetic door after the pod opener 113 receiving the command from the controller 170 unlocks the hermetic door. Is done. After the pod 111 is opened, the transfer robot 115 that has received a command from the controller 170 sequentially loads a plurality of unprocessed wafers 112 stored in the pod 111 onto the quartz boat 120. When the number of wafers 112 to be loaded on the quartz boat 120 is larger than the number of wafers 112 stored in the pod 111, the pods on the pod stage 110 are loaded until a predetermined number of wafers 112 are loaded on the quartz boat 120. The mounting operation by the transfer robot 115 is repeated while replacing 111. When a predetermined number of wafers 112 are mounted on the quartz boat 120, the driving device 130 operates in accordance with a command from the controller 170 to pull up the arm 131 in the vertical direction. Since the arm 131 is fixed to the flange 122, the quartz boat 120, the cap 121, the flange 122, and the quartz boat rotating device 123 are pulled up by the operation of the driving device 130, and finally the quartz boat 120 is connected to the reaction tube 150. Housed inside. While the quartz boat 120 is housed in the reaction tube 150, the flange 154 and the flange 122 at the bottom of the reaction tube 150 are in close contact with each other.

  The quartz boat 120 is disposed immediately below the opening of the flange 154 that constitutes the bottom of the reaction tube 150. The cap portion 121 has a recess for holding the quartz boat 120 on the upper surface thereof, and is connected to the quartz boat rotating device 123 via a flange 122. The quartz boat rotating device 123 rotates the cap unit 121 in accordance with a command from the controller 170. Since the flange 122 has a bearing structure, the flange 122 does not rotate even when the cap portion 121 rotates. The reaction tube 150 is surrounded by a soaking tube 160 made of a material having a high thermal conductivity and a heater 161 installed on the outer side of the soaking tube 160. The heater 161 heats the entire reaction tube 150 uniformly from the outside via the soaking tube 160 when the quartz boat 120 is accommodated in the reaction tube 150 in advance or in accordance with a command from the controller 170.

  After the quartz boat 120 is accommodated in the reaction tube 150, the gas unit 140 that has received a command from the controller 170 uses a reactive gas containing a thin film material (hereinafter may be referred to as “source gas”) as a gas nozzle. 141 is introduced into the reaction tube 150. The raw material gas introduced into the reaction tube 150 chemically reacts by heating with the heater 161 while flowing toward the exhaust port 145 that is the only exhaust port of the reaction tube 150. Then, the raw material gas chemically reacts on or near the surface of the wafer 112, so that crystals are generated and grown on the surface of the wafer 112, or reaction products adhere to the surface. As a result, a thin film is formed on the surface of the wafer 112. The quartz boat 120 is always rotating while the source gas is being introduced into the reaction tube 150 from the gas nozzle 141.

  When the thin film formed on the surface of the wafer 112 grows to a desired thickness, the quartz boat rotating device 123 stops the rotation of the quartz boat 120 according to a command from the controller 170, and the gas unit 140 supplies the raw material to the reaction tube 150. The introduction of gas is stopped, and the heater 161 for heating stops heating the reaction tube 150. Thereafter, the driving device 130 lowers the arm 131 in accordance with a command from the controller 170, whereby the quartz boat 120 is lowered to the height when the wafer 112 is mounted. Then, according to a command from the controller 170, the transfer robot 115 stores a predetermined number of processed wafers 112 in the pod 111. After that, the pod opener 113 that has received the command from the controller 170 seals the pod 111 by inserting and locking the sealing door of the pod 111 that is held in the opening of the pod 111. The pod 111 thus sealed is carried out of the substrate processing apparatus 100 through a pod loading / unloading port (not shown).

  As shown in FIG. 2, the quartz boat 120 includes a top plate 124, four columns 125, a plurality of claws 126 attached to two adjacent columns 125, and a bottom plate 128. All four support columns 125 are fixed to the top plate 124 and the bottom plate 128. As shown in FIG. 2, a plurality of inclined grooves 129 having a constant width with an angle X with respect to the horizontal direction are provided at equal intervals on the center side portion of the top plate 124 on the outer peripheral surface of the four columns 125. Yes. In addition, a claw 126 is attached to the two left pillars 125 in FIG. 2 so as to protrude to the left between the upper and lower inclined grooves 129. The claw 126 is attached between the upper and lower inclined grooves 129 of the support column 125 so that the angle with respect to the horizontal direction is X. Therefore, the upper surface of the claw 126 and the bottom surface of the inclined groove 129 constitute the same plane. Further, a protrusion 127 protruding upward is provided on the outer peripheral side of the top plate 124 in the claw 126 of FIG.

  When the diameter of the wafer 112 is large, bending due to the weight of the wafer 112 itself occurs. In the conventional horizontal holding, thermal stress distortion due to bending of the wafer 112, slipping, cracking and the like are likely to occur, which is disadvantageous in processing a plurality of sheets. As a method for solving this problem, an angle X as in this method is provided to make it difficult for the wafer 112 to bend due to its own weight, to reduce the thermal stress of the wafer 112, and to suppress the occurrence of slipping. . The above-mentioned angle X varies depending on the thickness of the wafer 112, but can be in the range of 0 ° to 45 °, for example.

  As shown in FIG. 2, the wafer 112 mounted on the quartz boat 120 by the transfer robot 115 is supported by the bottom surface of the inclined groove 129, the top surface of the claw 126, and the protrusion 127. Therefore, the wafer 112 mounted on the quartz boat 120 has an angle X with respect to the horizontal direction. However, since the wafer 112 is in contact with the protrusion 127 on the outer peripheral surface thereof, the wafer 112 does not fall from the quartz boat 120. As described above, the quartz boat 120 tilts the wafer 112 and supports the wafer 112 by the protrusion 127 at the lower end in the tilt direction. Therefore, the quartz boat 120 is derived from the raising / lowering by the driving device 130 and the rotation by the quartz boat rotating device 123. Even when subjected to vibration or impact, the wafer 112 does not fall from the quartz boat 120 or shift its mounting position.

  As shown in FIG. 3, the reaction tube 150 includes a gas nozzle 141 connected to the gas unit 140, an exhaust port 145, an inner wall 151, an outer shell 152, flanges 153 and 154, and two partition plates 155. The reaction tube 150 has a double tube structure including an outer shell 152 and an inner wall 151 that partitions the inside thereof. FIG. 3 shows only the structure of the upper part when the reaction tube 150 is divided into two parts, the upper part and the lower part, at the position of the flange 153. The upper end of the outer shell 152 is rounded and closed, while a flange 154 having an opening with an inner diameter that is the same as the inner diameter of the inner wall 151 is attached to the lower end. A quartz boat 120 is disposed immediately below the opening of the flange 154, and the quartz boat 120 is accommodated in or pulled out of the reaction tube 150 through the opening. The flange 153 has a donut plate shape having an opening having an inner diameter that is the same as the outer diameter of the outer shell 152, and the outer shell 152 is inserted into the opening and is fixed to the outer peripheral surface of the outer shell 152. A gas nozzle 141 and an exhaust port 145 are installed below the reaction tube 150 between the flange 153 and the flange 154 so as to face each other.

  The inner wall 151 is joined to the ceiling of the outer shell 152, the two partition plates 155, and the opening of the flange 154 without a gap. Similarly, the two partition plates 155 are joined to the inner wall 151, the ceiling of the outer shell 152, and the flange 154 without a gap. Therefore, the inside of the reaction tube 150 includes an inner wall 151 and two partition plates 155, a gas introduction path 156 that is a space where the gas nozzle 141 is present, a boat accommodation chamber 143 that is a space where the quartz boat 120 is accommodated, and an exhaust. It is divided into an exhaust passage 159 which is a space where the port 145 exists.

  As shown in FIG. 3, the inner wall 151 is a plurality of gas introduction ports 157 that are through holes that communicate between the gas introduction passage 156 and the boat accommodation chamber 143, and through holes that communicate between the boat accommodation chamber 143 and the exhaust passage 159. A plurality of exhaust ports 158 are provided. Therefore, the raw material gas supplied from the gas nozzle 141 to the gas introduction path 156 is introduced into the boat accommodation chamber 143 through the gas introduction port 157. Next, a thin film is formed on the surface of the wafer 112 by a chemical reaction in the boat accommodating chamber 143. Next, the air flows into the exhaust passage 159 through the exhaust port 158. Finally, the gas is exhausted from the exhaust port 145 to the outside of the reaction tube 150.

  As shown in FIG. 4, the interval between the gas inlets 157 provided in the inner wall 151 is narrower than the interval between the wafers 112 mounted on the quartz boat 120. Since the gap between the gas inlets 157 is narrower than the gap between the wafers 112, the source gas is reliably supplied to all the gaps between the wafers 112 mounted on the quartz boat 120.

  The source gas introduced into the boat accommodating chamber 143 from the gas inlet 157 mainly collides with the surface of the wafer 112 as an airflow directed in the horizontal direction. The source gas that collides with the surface of the wafer 112 changes the direction of the airflow or diffuses due to the collision. Therefore, the source gas colliding with the lower surface of the wafer 112 changes its direction as shown in FIG. 4A and collides with the upper surface of the lower adjacent wafer 112 or diffuses along the lower surface of the wafer 112. Since the quartz boat 120 is rotating while the source gas is being introduced from the gas inlet 157, the internal state of the reaction tube 150 is rotated 180 ° from the state of FIG. It changes periodically to the state of 4 (b). When the state shown in FIG. 4B is reached, the source gas introduced into the boat accommodation chamber 143 from the gas introduction port 157 collides with the upper surface of the wafer 112. Therefore, the flow of the source gas in the gap between the wafers 112 is completely different between the state of FIG. 4A and the state of FIG. Further, since the quartz boat 120 and the wafer 112 function as an agitator by the rotation of the quartz boat 120, the flow of the source gas in the gap between the wafers 112 is maintained while the thin film is formed on the surface of the wafer 112. Continue to change complexly.

  As described above, in this embodiment, the source gas changes or diffuses after the source gas collides with the surface of the wafer 112, and the source gas gas flow and diffusion state change in a complicated manner by the rotation of the quartz boat 120. Therefore, the density of the source gas is hardly generated in the gap between the wafers 112. As a result, according to the present embodiment, a uniform thin film can be simultaneously formed on the surfaces of the plurality of wafers 112. Therefore, in general, as the wafer 112 becomes larger, the concentration of the source gas is more likely to occur, and a non-uniform thin film is likely to be formed. A thin film can be formed.

(2) Operation of Substrate Processing Apparatus 100 Here, the operation of the substrate processing apparatus 100, that is, each film forming process for forming a thin film on the surface of the wafer 112 in the substrate processing apparatus 100 will be described in order.

  First, a plurality of unprocessed wafers 112 stored in a pod 111 arranged on the pod stage 110 are mounted on the quartz boat 120 by the transfer robot 115 that has received a command from the controller 170. . At this time, the wafer 112 is in contact with the bottom surface of the inclined groove 129 provided on the outer peripheral surface of the support 125, the upper surface of the claw 126 having the same inclination angle as the inclined groove 129, and the protrusion 127 that is a part of the claw 126. Placed in. If the number of wafers 112 stored in the pod 111 is less than the number of wafers 112 to be mounted on the quartz boat 120, the pod 111 on the pod stage 110 is replaced with another pod 111 to obtain a predetermined number. Until it reaches, the loading operation of the wafer 112 by the transfer robot 115 is continued.

  Next, the driving device 130 that has received a command from the controller 170 pulls up the arm 131 in the vertical direction, whereby the quartz boat 120 is accommodated in the boat accommodating chamber 143. After the quartz boat 120 is accommodated in the boat accommodating chamber 143, the flange 122 and the exhaust port 145 are in close contact with each other, so that the gas passage 141 and the exhaust port 145 are only vented into the reaction tube 150.

  Next, the gas unit 140 that has received the command from the controller 170 supplies the source gas from the gas nozzle 141 to the gas introduction path 156. When the source gas is filled in the gas introduction path 156, a pressure difference is generated between the gas introduction path 156 and the boat accommodation chamber 143, so that the source gas is introduced from the gas introduction path 156 into the boat accommodation chamber 143 through the gas introduction port 157. Is done. At this time, since the gap between the gas inlets 157 is narrower than the gap between the wafers 112 in the quartz boat 120, the source gas introduced from the gas inlet 157 into the boat accommodating chamber 143 is in the gaps between all the wafers 112. You can get in. In addition, since the inclination of the wafer 112 in the quartz boat 120 and the direction in which the raw material gas ejected from the gas introduction port 157 is non-parallel, the raw material gas ejected from the gas introduction port 157 is in the gap between the wafers 112. Colliding with the surface of the wafer 112, the direction of the airflow is changed or diffused. Thereby, the uniformity of the concentration of the source gas in the gap between the wafers 112 is improved.

  Next, when the source gas is supplied from the gas nozzle 141 to the gas introduction path 156, the quartz boat rotating device 123 that has received a command from the controller 170 rotates the quartz boat 120. The rotation of the quartz boat 120 changes the collision state between the surface of the quartz boat 120 and the raw material gas ejected from the gas introduction port 157, and the quartz boat 120 and the wafer 112 function as an agitator. The uniformity of the raw material gas in the gap between them is further improved.

  Next, the source gas supplied to the gap between the wafers 112 in the quartz boat 120 chemically reacts by heating from the heater 161 to form a thin film on the surface of the wafer 112. Then, the unreacted gas, the by-product, and the carrier gas in the raw material gas are pushed out from the boat housing chamber 143 to the exhaust passage 159 through the exhaust port 158 by the raw material gas newly supplied from the gas introduction port 157. Then, the gas pushed out to the exhaust path 159 is exhausted from the exhaust port 145 to the outside of the reaction tube 150.

  Next, after a predetermined time has elapsed, the gas unit 140 stops supplying the source gas from the gas nozzle 141 to the gas introduction path 156 in accordance with a command from the controller 170, and the quartz boat rotating device 123 is accommodated in the boat accommodating chamber 143. The rotation of the quartz boat 120 is stopped. Thereby, the thin film growth on the surface of the wafer 112 is also stopped.

  Next, the driving device 130 that has received a command from the controller 170 lowers the arm 131, whereby the quartz boat 120 is taken out from the boat accommodation chamber 143.

  Next, the transfer robot 115 that has received the command from the controller 170 stores the processed wafer 112 on which the thin film is formed in the pod 111.

(3) Effects of Substrate Processing Apparatus 100 According to the present embodiment, one or more effects described below are exhibited.

  According to the substrate processing apparatus 100, since the gap between the gas inlets 157 is narrower than the gap between the wafers 112 mounted on the quartz boat 120, the source gas is reliably supplied to all the gaps between the wafers 112 in the quartz boat 120. Supplied.

  Further, according to the substrate processing apparatus 100, since the quartz boat 120 tilts and holds the plurality of wafers 112 at an interval, the source gas collides with the surface of the wafer 112 in the gap between the wafers 112. Later, the airflow changes direction and diffuses. Therefore, according to the substrate processing apparatus 100, the concentration of the source gas is less likely to occur in the gap between the wafers 112. As a result, when the substrate processing apparatus 100 is used, a uniform thin film can be simultaneously formed on the surfaces of the plurality of wafers 112.

  Furthermore, according to the substrate processing apparatus 100, while the raw material gas is being introduced into the boat accommodation chamber 143 from the gas introduction port 157, the quartz boat 120 is rotating in the boat accommodation chamber 143. The state of collision with the source gas continues to change. Further, the quartz boat 120 and the wafer 112 function as an agitator by the rotation of the quartz boat 120. As a result, in the gap between the wafers 112 mounted on the quartz boat 120, the flow of the source gas and its diffusion state continue to change in a complicated manner, so that the uniformity of the source gas is further improved. Therefore, in general, as the wafer 112 becomes larger, the concentration of the source gas is more likely to occur, and a non-uniform thin film is likely to be formed. However, if the substrate processing apparatus 100 is used, the surface of the wafer 112 becomes uniform even when the wafer 112 becomes larger. A thin film can be formed.

  Further, according to the substrate processing apparatus 100, the quartz boat 120 holds the wafer 112 in an inclined state, so that even if the wafer 112 is large, the wafer 112 is not easily bent when mounted on the quartz boat 120. Therefore, even if the wafer 112 is large, the thin film formed by the substrate processing apparatus 100 is hard to be peeled off because stress is hardly generated.

  Further, according to the substrate processing apparatus 100, since the quartz boat 120 holds the wafer 112 in an inclined state, even if an impact or vibration is applied to the wafer 112 due to the raising or lowering or rotation of the quartz boat 120, the wafer 112 is held in the quartz boat. It does not fall from 120 or its mounting position is not shifted. Therefore, if a thin film is formed on the surface of the wafer 112 using the substrate processing apparatus 100, the defective product rate of the wafer 112 due to film formation failure can be improved.

<Other Embodiments of the Present Invention>
In another embodiment of the present invention, a collective quartz boat 500 shown in FIG. 5 is used instead of the quartz boat 120 in the substrate processing apparatus 100. Therefore, in the present embodiment, only differences from the substrate processing apparatus 100 will be described in detail.

  The collective quartz boat 500 includes a top plate 504, a bottom plate 508, a rotary gas introduction pipe 510, and bearings 520 and 521, and is further fixed to the top plate 504 and the bottom plate 508 from the quartz boat 120 to the top plate 124. And three sets of structural units from which the bottom plate 128 is removed (hereinafter sometimes referred to as “substrate stacking portion”). Bearings 520 and 521 are installed in the center of the top plate 504 and the bottom plate 508, and the rotary gas introduction pipe 510 is rotatably inserted into the bearings 520 and 521. The upper end of the rotary gas introduction pipe 510 is closed, and the lower end thereof is connected to the quartz boat rotating device 123. The bottom plate 508 is hooked on the flange 122 by a clasp (not shown). Therefore, when the quartz boat rotating device 123 is operated, the rotary gas introduction pipe 510 is rotated, but the bottom plate 508 hooked on the flange 122 is not rotated. That is, in the collective quartz boat 500, the top plate 504, the bottom plate 508, and the three sets of substrate stacking portions do not rotate while the source gas is supplied to the wafer 112 by rotating the rotary gas introduction pipe 510.

  The rotary gas introduction pipe 510 is a hollow pipe and includes a plurality of through holes, that is, gas introduction ports 511 on the outer peripheral surface thereof. In the present embodiment, the gas nozzle 141 is connected to the lower end of the rotary gas introduction pipe 510 instead of the lower part of the reaction pipe 150. Therefore, in this embodiment, when the gas unit 140 is operated, the source gas is supplied to the wafer 112 from the gas inlet 511 through the rotary gas inlet pipe 510.

As shown in FIG. 5B, the gas inlet 511 is spirally provided on the outer peripheral surface of the rotary gas inlet pipe 510. Since the rotary gas introduction pipe 510 rotates when the raw material gas is supplied, the raw material gas is supplied from the gas introduction ports 511 having various heights to one wafer 112. Will be. That is, if the gas inlet 511 is provided in a spiral shape, the same effect as that obtained when the interval between the gas inlets 157 is narrowed can be obtained. Further, if the gas introduction port 511 is provided in a spiral shape, the gas introduction port 511 does not concentrate at a specific height, and therefore there is no local low strength portion in the rotary gas introduction pipe 510.

  If the collective quartz boat 500 is used instead of the quartz boat 120, the source gas is supplied from the gas inlet 511 to the wafer 112, so that the reaction tube 150 does not need to have a double tube structure. Therefore, in this embodiment, it is preferable to remove the inner wall 151 and the two partition plates 155 from the reaction tube 150. In this way, the volume of the boat accommodating chamber 143 in the reaction tube 150 can be increased, and the substrate processing capacity of the reaction tube 150 can be increased. Furthermore, in this embodiment, it is preferable to add an exhaust port 145 in the vicinity of the three sets of substrate stacking portions in the collective quartz boat 500. In this way, the source gas supplied from the gas inlet 511 to the wafer 112 is quickly exhausted from the exhaust port 145 without causing unnecessary convection inside the reaction tube 150. As a result, if the exhaust port 145 is added, it is possible to prevent the uniformity of the source gas from being deteriorated in the gap between the wafers 112.

  In the collective quartz boat 500, the three sets of substrate stacks are fixed to the top plate 504 and the bottom plate 508 so that the two adjacent struts 125 to which the claws 126 are attached are positioned on the outer peripheral side of the top plate 504. Yes. By installing the three sets of substrate stacking portions in this way, as shown in FIG. 5B, all the wafers have an inclination angle X with respect to the jet direction of the source gas jetted from the gas inlet 511. 112 can be disposed, and as a result, the source gas can be reliably collided with the surface of the wafer 112. Therefore, if the collective quartz boat 500 is used, a uniform thin film can be simultaneously formed on the surfaces of all the wafers 112 mounted on the three sets of substrate stacking portions.

  While the thin plate is formed on the surface of the wafer 112, the bottom plate 508 is hooked on the flange 122 by a metal clasp. When the wafer 112 is mounted on the collective quartz boat 500 by the transfer robot 115, The clasp is removed and it can rotate freely. Therefore, the collective quartz boat 500 is rotated when the wafer 112 is loaded by the transfer robot 115, and when the substrate stack is fully loaded, the self-rotation quartz boat 500 is rotated by itself so that an empty substrate stack portion is formed with respect to the transfer robot 115. Can be newly provided. That is, according to the collective quartz boat 500, the transfer robot 115 can load the wafers 112 on all the substrate stacking portions without changing the position where the wafers 112 are mounted on the substrate stacking portions.

<Modification of Embodiment of the Present Invention>
It goes without saying that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention.

  In the above embodiment, the case where the source gas supplied to the gas introduction path 156 in the reaction tube 150 is ejected from the gas introduction port 157 into the boat accommodating chamber 143 in the horizontal direction has been described. For example, as illustrated in FIG. 6, the gas introduction port 157 may be inclined so that the source gas is ejected from the gas introduction port 157 into the boat accommodating chamber 143 in an oblique direction. In addition, if the inner wall 151 is thin and the gas introduction port 157 is inclined, but the jet direction of the source gas is not sufficiently inclined, an inclined nozzle may be attached around the gas introduction port 157. However, the material gas ejected from the gas introduction port 157 is attached in the direction of ejection of the source gas ejected from the gas introduction port 157, that is, the inclination of the gas introduction port 157 or around the gas introduction port 157 so that the surface of the wafer 112 collides The tilt of the nozzles is preferably not parallel to the tilt of the wafers 112 held on the quartz boat 120. Further, the interval between the plurality of gas inlets 157 may be the same as the interval between the plurality of wafers 112.

  In the above embodiment, as shown in FIG. 3B, the case where three gas inlets 157 are provided in the horizontal direction has been described. However, the present invention is not limited to this case. For example, the gas inlet 157 may be a horizontally long slit in the horizontal direction.

  In the above-described embodiment, the gas introduction port 157 may be processed so that the opening area of the gas introduction port 157 increases according to the distance from the ejection port of the gas nozzle 141. In the reaction tube 150, the raw material gas is introduced into the boat accommodating chamber 143 from the gas introduction port 157 after filling the gas introduction path 156. Here, if the pressure difference between the gas introduction path 156 and the boat accommodating chamber 143 is large, the flow rate of the raw material gas ejected from the gas introduction port 157 is substantially uniform regardless of the position of the gas introduction port 157 on the inner wall 151. . However, if the pressure difference between the gas introduction passage 156 and the boat accommodation chamber 143 is small, that is, the state in which the raw material gas is supplied to the boat accommodation chamber 143 via the gas introduction port 157 before the gas introduction passage 156 is sufficiently filled. If so, the pressure in the gas introduction path 156 is in a state of decreasing according to the distance from the outlet of the gas nozzle 141 that supplies the raw material gas to the gas introduction path 156. Therefore, in such a state, the gas introduction port 157 is processed so that the opening area of the gas introduction port 157 increases in accordance with the distance from the ejection port of the gas nozzle 141, thereby introducing the gas into the inner wall 151. Regardless of the position of the port 157, the flow rate of the source gas ejected from the gas introduction port 157 can be made substantially uniform.

  In each of the above embodiments, the case where the substrate is the semiconductor wafer 112 has been described. However, the present invention is not limited to this case. For example, the substrate is a metal, metal oxide, glass, or ceramic. It may consist of.

  In each of the above embodiments, the case where a reactive gas is supplied to the surface of the wafer 112 to form a thin film has been described. However, the present invention is not limited to this case. The substrate may be annealed by supplying an inert gas, or may be reduced by supplying a reducing gas.

  In each of the above embodiments, the case where the quartz boat 120 or the aggregated quartz boat 500 in which the plurality of inclined grooves 129 are provided on the outer peripheral surface of the support 125 is used as the substrate holder has been described. For example, a ring boat or a cover boat having an inclined surface for inclining and holding the substrate may be used as the substrate holder.

  In the above-described embodiment, the case where the reaction tube 150 has a double tube structure including the inner wall 151 and the outer shell 152 has been described. However, the present invention is not limited to this case. The reaction tube 150 may not include a part of the inner wall 151 constituting the exhaust path 159, that is, may not include the exhaust path 159. The present invention uniformly supplies the surface of a substrate to a plurality of substrates held at an interval in an inclined state by supplying gas from a gas inlet provided at a narrower interval than the interval between the substrates. Since the processing can be performed, the effect of the present invention can be obtained even if the path for discharging the gas supplied between the substrates is not clearly defined. Further, if a part of the inner wall 151 constituting the exhaust path 159 is removed, the boat accommodating chamber 143 is expanded, so that the reaction tube 150 can process a larger wafer 112.

<Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.

According to one aspect of the present invention, a substrate holder that tilts and holds a plurality of substrates at intervals, and
A plurality of gas inlets installed at intervals smaller than the interval between the substrates;
There is provided a substrate processing apparatus comprising: a rotation device that rotates the substrate holder while gas is supplied from the gas introduction port.

Preferably, the substrate processing apparatus further comprises a gas nozzle for supplying gas to the gas inlet,
The opening area of the gas inlet increases in accordance with the distance from the gas nozzle outlet.

  Preferably, the inclination of the substrate held by the substrate holder and the ejection direction of the gas ejected from the gas inlet are non-parallel.

  Preferably, the substrate processing apparatus further includes a space, that is, a gas introduction path for supplying the substrate from only the gas introduction port after temporarily storing the gas.

Preferably, the substrate holder is a collective substrate holder having a plurality of substrate stacking portions that incline and hold the plurality of substrates at intervals in the vertical direction,
The collective substrate holder includes a rotary gas introduction pipe that is rotatably installed between the substrate lamination portions,
The rotary gas introduction pipe includes the gas introduction port on an outer peripheral surface, and jets gas to the substrate while rotating.

  Preferably, the gas introduction port is provided in a spiral shape on the outer peripheral surface of the rotary gas introduction pipe.

According to another aspect of the present invention, a substrate disposing step of disposing a substrate on the inclined surface of a substrate holder having a plurality of inclined surfaces;
A gas supply step of supplying a gas from a plurality of gas inlets installed at an interval narrower than an interval between the inclined surfaces to the substrate disposed on the inclined surface;
There is provided a substrate processing method including a substrate surface processing step of processing the surface of the substrate while rotating the substrate holder while gas is supplied from the gas inlet.

100 Substrate Processing Device 112 Wafer (Substrate)
120 Quartz boat (substrate holder)
126 claw 127 protrusion (upper surface is inclined surface)
129 inclined groove (bottom surface is inclined surface)
157 Gas inlet

Claims (4)

A substrate holder including a top plate and a bottom plate, and a plurality of support columns, and stacking and holding a plurality of substrates at intervals,
A substrate holder in which an inclined groove is formed in the support column.   At least two struts of the struts are provided with claw portions, the claw portions are configured to have a predetermined angle with respect to the horizontal direction, and the substrate is between the inclined grooves above and below the struts. The substrate holder according to claim 1, wherein the substrate holder is attached to the substrate.   The substrate holder according to claim 2, wherein the claw portion is further provided with a protrusion, and the protrusion is in contact with the outer peripheral surface of the substrate. A wafer support method for arranging a substrate on a substrate holder including a top plate, a bottom plate, and a plurality of support columns,
A wafer support method, wherein the substrate is mounted between upper and lower inclined grooves of the support column and is held inclined by the substrate holder.

Images