JP2014053759A5 - - Google Patents

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Publication number
JP2014053759A5
JP2014053759A5 JP2012196848A JP2012196848A JP2014053759A5 JP 2014053759 A5 JP2014053759 A5 JP 2014053759A5 JP 2012196848 A JP2012196848 A JP 2012196848A JP 2012196848 A JP2012196848 A JP 2012196848A JP 2014053759 A5 JP2014053759 A5 JP 2014053759A5
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Japan
Prior art keywords
switch
power amplifier
base
bias circuit
resistance element
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JP2012196848A
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Japanese (ja)
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JP5983208B2 (en
JP2014053759A (en
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Priority to JP2012196848A priority Critical patent/JP5983208B2/en
Priority claimed from JP2012196848A external-priority patent/JP5983208B2/en
Publication of JP2014053759A publication Critical patent/JP2014053759A/en
Publication of JP2014053759A5 publication Critical patent/JP2014053759A5/ja
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Claims (6)

基準電圧が印加される基準端子と、
前記基準端子に電気的に接続されたベースを有し、前記ベースに印加された電圧に応じて電力増幅器を駆動するトランジスタと、
前記トランジスタのコレクタと前記ベースを接続又は分離する第1スイッチと、
コレクタ電圧が印加されるコレクタ電圧入力端子と、
前記コレクタと前記コレクタ電圧入力端子を接続又は分離する第2スイッチと、
前記第1スイッチ、及び前記第2スイッチのオンオフを切り替える制御部と、を備え、
前記制御部は、前記電力増幅器が低出力で動作するときは前記第1スイッチをオンするとともに前記第2スイッチをオフし、前記電力増幅器が高出力で動作するときは前記第1スイッチをオフするとともに前記第2スイッチをオンすることを特徴とする電力増幅器用バイアス回路。
A reference terminal to which a reference voltage is applied;
A transistor having a base electrically connected to the reference terminal and driving a power amplifier in response to a voltage applied to the base;
A first switch for connecting or separating the collector of the transistor and the base;
A collector voltage input terminal to which a collector voltage is applied;
A second switch for connecting or separating the collector and the collector voltage input terminal;
A controller that switches on and off of the first switch and the second switch,
The controller turns on the first switch and turns off the second switch when the power amplifier operates at a low output, and turns off the first switch when the power amplifier operates at a high output. And a bias circuit for a power amplifier, wherein the second switch is turned on.
一端が前記基準端子に電気的に接続され、他端が前記ベースに電気的に接続されたアイドル電流調整抵抗素子と、
前記アイドル電流調整抵抗素子と並列に接続された第3スイッチと、を備え、
前記制御部は、前記電力増幅器が低出力で動作するときは前記第3スイッチをオフし、前記電力増幅器が高出力で動作するときは前記第3スイッチをオンすることを特徴とする請求項1に記載の電力増幅器用バイアス回路。
An idle current adjusting resistor element having one end electrically connected to the reference terminal and the other end electrically connected to the base;
A third switch connected in parallel with the idle current adjustment resistor element,
2. The control unit turns off the third switch when the power amplifier operates at a low output, and turns on the third switch when the power amplifier operates at a high output. A bias circuit for a power amplifier as described in 1.
前記コレクタと前記ベースの間に前記第1スイッチと直列に接続されたコレクタエミッタ間抵抗素子を備えたことを特徴とする請求項1又は2に記載の電力増幅器用バイアス回路。   The bias circuit for a power amplifier according to claim 1, further comprising a collector-emitter resistance element connected in series with the first switch between the collector and the base. 一端が、前記ベースに電気的に接続され、他端が接地点に電気的に接続された分岐抵抗素子と、
前記分岐抵抗素子と前記接地点を接続又は分離する、前記制御部の制御を受ける第4スイッチと、を備え、
前記制御部は、前記電力増幅器が低出力で動作するときは前記第4スイッチをオンし、前記電力増幅器が高出力で動作するときは前記第4スイッチをオフすることを特徴とする請求項1に記載の電力増幅器用バイアス回路。
A branch resistance element having one end electrically connected to the base and the other end electrically connected to a ground point;
A fourth switch connected to or separated from the branch resistance element and the grounding point and controlled by the control unit;
2. The control unit turns on the fourth switch when the power amplifier operates at a low output, and turns off the fourth switch when the power amplifier operates at a high output. A bias circuit for a power amplifier as described in 1.
前記トランジスタはエミッタを備え、
一端が前記エミッタに電気的に接続され、他端が接地点に電気的に接続されたエミッタ抵抗素子を備えたことを特徴とする請求項1乃至4のいずれか1項に記載の電力増幅器用バイアス回路。
The transistor comprises an emitter;
5. The power amplifier according to claim 1, further comprising an emitter resistance element having one end electrically connected to the emitter and the other end electrically connected to a ground point. Bias circuit.
前記トランジスタはエミッタを備え、
一端が前記ベースに電気的に接続された第1付加抵抗素子と、
一端が前記第1付加抵抗素子の他端と接続された第1ダイオードと、
一端が前記第1ダイオードの他端と接続され、他端が接地点と接続された第2ダイオードと、
一端が前記エミッタに接続された第2付加抵抗素子と、
コレクタが前記第2付加抵抗素子の他端と接続され、エミッタが接地点と接続され、ベースが前記第1ダイオードと前記第2ダイオードの中点に接続された付加トランジスタと、を備えたことを特徴とする請求項1乃至4のいずれか1項に記載の電力増幅器用バイアス回路。
The transistor comprises an emitter;
A first additional resistance element having one end electrically connected to the base;
A first diode having one end connected to the other end of the first additional resistance element;
A second diode having one end connected to the other end of the first diode and the other end connected to a ground point;
A second additional resistance element having one end connected to the emitter;
An additional transistor having a collector connected to the other end of the second additional resistance element, an emitter connected to a ground point, and a base connected to the midpoint of the first diode and the second diode. The bias circuit for a power amplifier according to claim 1, wherein the bias circuit is a power amplifier bias circuit.
JP2012196848A 2012-09-07 2012-09-07 Power amplifier bias circuit Active JP5983208B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012196848A JP5983208B2 (en) 2012-09-07 2012-09-07 Power amplifier bias circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012196848A JP5983208B2 (en) 2012-09-07 2012-09-07 Power amplifier bias circuit

Publications (3)

Publication Number Publication Date
JP2014053759A JP2014053759A (en) 2014-03-20
JP2014053759A5 true JP2014053759A5 (en) 2015-07-30
JP5983208B2 JP5983208B2 (en) 2016-08-31

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012196848A Active JP5983208B2 (en) 2012-09-07 2012-09-07 Power amplifier bias circuit

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JP (1) JP5983208B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018139399A1 (en) 2017-01-24 2018-08-02 株式会社村田製作所 Power amplifier module, method for controlling power amplifier module, and high-frequency front end circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5194803B2 (en) * 2008-01-08 2013-05-08 三菱電機株式会社 Power amplifier
JP2011160256A (en) * 2010-02-02 2011-08-18 Mitsubishi Electric Corp Emitter-follower type bias circuit
JP5709431B2 (en) * 2010-08-17 2015-04-30 新日本無線株式会社 Power amplifier

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