JP2014042050A - ポストパッシベーション法を使用した高性能システムオンチップ - Google Patents

ポストパッシベーション法を使用した高性能システムオンチップ Download PDF

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Publication number
JP2014042050A
JP2014042050A JP2013214264A JP2013214264A JP2014042050A JP 2014042050 A JP2014042050 A JP 2014042050A JP 2013214264 A JP2013214264 A JP 2013214264A JP 2013214264 A JP2013214264 A JP 2013214264A JP 2014042050 A JP2014042050 A JP 2014042050A
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JP
Japan
Prior art keywords
layer
electrical contacts
passivation layer
conductive
insulating
Prior art date
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Withdrawn
Application number
JP2013214264A
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English (en)
Japanese (ja)
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JP2014042050A5 (enExample
Inventor
Rin Muu-Shun
ムウ−シュン・リン
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Megit Acquisition Corp
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Megit Acquisition Corp
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Priority to JP2013214264A priority Critical patent/JP2014042050A/ja
Publication of JP2014042050A publication Critical patent/JP2014042050A/ja
Publication of JP2014042050A5 publication Critical patent/JP2014042050A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2013214264A 2013-10-11 2013-10-11 ポストパッシベーション法を使用した高性能システムオンチップ Withdrawn JP2014042050A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013214264A JP2014042050A (ja) 2013-10-11 2013-10-11 ポストパッシベーション法を使用した高性能システムオンチップ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013214264A JP2014042050A (ja) 2013-10-11 2013-10-11 ポストパッシベーション法を使用した高性能システムオンチップ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2001267522A Division JP5683765B2 (ja) 2001-09-04 2001-09-04 集積回路チップ及びその形成方法

Publications (2)

Publication Number Publication Date
JP2014042050A true JP2014042050A (ja) 2014-03-06
JP2014042050A5 JP2014042050A5 (enExample) 2014-04-17

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JP2013214264A Withdrawn JP2014042050A (ja) 2013-10-11 2013-10-11 ポストパッシベーション法を使用した高性能システムオンチップ

Country Status (1)

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JP (1) JP2014042050A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116705758A (zh) * 2023-07-18 2023-09-05 江苏帝奥微电子股份有限公司 一种降低高速开关通道金属寄生电容金属结构及制备工艺

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116705758A (zh) * 2023-07-18 2023-09-05 江苏帝奥微电子股份有限公司 一种降低高速开关通道金属寄生电容金属结构及制备工艺

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