JP2014035813A - Light emission enhancement base plate and light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make it possible to improve light emission intensity of a light emitter.SOLUTION: A light emission enhancement base plate 1 is used to enhance light emission intensity of a light emitter and comprises a base plate 2 and a nano-particle layer 4 which is disposed on a surface of the base plate 2 and consists of a plurality of Si nano-particles 3 made of silicon. The nano-particle layer 4 is irradiated with light, thereby generating a localization electric field.

Description

  The present invention relates to a light emission enhancing substrate and a light emitting element, and more particularly to a light emission enhancing substrate and a light emitting element using nanoparticles.

  In recent years, in order to improve the performance of light-emitting elements such as organic EL elements, various studies have been conducted on methods for enhancing the intensity of light generated from a light emitter. In particular, many studies have been conducted on methods for enhancing the emission intensity using surface plasmons where metal nanoparticles are generated. For example, it is expected as a means for enhancing the intensity of light when used in a biochip.

  Surface plasmon refers to a phenomenon in which when a nanoparticle of metal such as gold or silver is irradiated with light, a strong local electric field is generated by collective vibration of free electrons on the surface. It has been reported so far that the energy of such a local electric field strongly excites the illuminant and the light intensity of the illuminant is enhanced by several tens of times.

  In many conventional studies, metal nanoparticles such as gold or silver are used to enhance the light intensity by surface plasmons because, as described above, the localized electric field that enhances the light intensity is This is because it is caused by collective vibration of free electrons, and it is considered that a stronger localized electric field can be obtained by using a metal having many free electrons.

  However, if the illuminant and the metal nanoparticle are brought too close together to excite the illuminant, the energy excited in the illuminant moves to the metal nanoparticle, causing a phenomenon (quenching) in which the light intensity decreases (quenching). . That is, this quenching significantly reduces the intensity of light emission by the metal nanoparticles. In particular, when the distance between the illuminant and the metal nanoparticles is on a nanometer scale, energy transfer from the illuminant to the metal nanoparticles becomes significant, and the reduction in the intensity of light emission due to quenching becomes significant.

  In order to suppress such quenching, a method of increasing the distance between the light emitter and the metal nanoparticles or introducing a spacer between them is known (for example, see Non-Patent Document 1). .) However, when a spacer is introduced between the luminescent material and the metal nanoparticles to suppress quenching, the intensity of the localized electric field generated by the free electrons of the metal nanoparticles is also reduced by the spacer, and as a result, the emission intensity is reduced. Will be reduced.

  In addition to such a method, the emission intensity of rhodamine, which is an organic dye, can be increased from several tens to 100 times by using fine particles made of gallium phosphide (GaP), which is an indirect transition type semiconductor. It is presented in Non-Patent Document 2. In addition to being able to excite the illuminant with a local electric field that generates scattered light generated by light irradiation, GaP fine particles can suppress quenching, suggesting that they have the same enhancement as when metal nanoparticles are used. ing. In addition, the suppression of quenching is considered to be due to the fact that GaP is an indirect transition semiconductor, and thus energy transfer from the excited light emitter to the GaP fine particles can be prevented.

W. Knoll et al., Analytical Chemistry (Anal.Chem) 75 (2003) P.2610 Shinji Hayashi et al., Chemical Physics Letter 480 (2009) P.100-104

  However, even if the quenching can be suppressed by using GaP fine particles, the light intensity is about the same as the case of using metal nanoparticles as a result. In addition, there is a demand for nanoparticles that can suppress quenching more strongly and can further enhance the enhancement of light.

  The present invention has been made in view of the above problems, and its purpose is to generate a localized electric field to strongly excite the illuminant and to strongly suppress quenching, thereby further increasing the emission intensity of the illuminant. An object of the present invention is to obtain a light emission enhancing substrate and a light emitting element that can be enhanced.

  In order to achieve the above object, the present inventors have conducted intensive research. As a result, when silicon (Si) nanoparticles are irradiated with light, they generate a localized electric field that generates scattered light generated by the light irradiation. Furthermore, the present invention was completed by finding that quenching can be prevented.

  That is, the light emission enhancing substrate according to the present invention is used to enhance the light emission intensity of the illuminant, and a substrate, a nanoparticle layer that is disposed on the surface of the substrate and is composed of a plurality of nanoparticles made of silicon, The nanoparticle layer is characterized by generating a localized electric field when irradiated with light.

  In the light emission enhancing substrate according to the present invention, a plurality of nanoparticles (hereinafter referred to as Si nanoparticles) made of silicon (Si) are disposed on the surface of the substrate. When Si nanoparticles are irradiated with light, as described above, a local electric field that generates scattered light generated by the light irradiation is generated, and the illuminant is excited by this local electric field. Can be enhanced. Furthermore, since Si is an indirect transition semiconductor, energy transfer from an excited light emitter to Si can be prevented and quenching can be prevented, similar to GaP. The inventors have found that the emission intensity can be improved 2000 times or more by using Si nanoparticles. That is, by using Si nanoparticles, the light emission intensity can be remarkably enhanced as compared with the case where the metal nanoparticles are used to enhance the light emission intensity. In addition, since Si is abundant and inexpensive, the cost can be reduced compared to using metal nanoparticles.

  As described above, since the Si nanoparticles generate a strong local electric field, and further, can suppress quenching and have an advantageous effect over the metal nanoparticles, the emission enhancement substrate of the present invention has a nanoparticle layer. There is no need to include metal.

  Further, the present inventors have found that Si nanoparticles having a particle size of 240 nm or more and 2000 nm or less have a light emission enhancing effect. That is, in the light emission enhancing substrate according to the present invention, the Si nanoparticles preferably have a particle size of 240 nm or more and 2000 nm or less.

  Moreover, the Si nanoparticles used in the light emission enhancing substrate of the present invention may be formed by a ball milling method. When the ball milling method is used, Si nanoparticles can be easily formed, and the particle size can be easily adjusted.

  The light emission enhancing substrate according to the present invention can be used for a light emitting element. That is, the light emitting device according to the present invention is formed on a transparent substrate, an anode formed on the transparent substrate, a hole transport layer formed on the anode, and the hole transport layer. A light emitting layer, an electron transporting layer formed on the light emitting layer, and a cathode formed on the electron transporting layer, and is made of silicon between the light emitting layer and the hole transporting layer. A nanoparticle layer composed of a plurality of nanoparticles is provided.

  According to the light emitting device according to the present invention, since the nanoparticle layer composed of the above Si nanoparticles is provided between the light emitting layer and the hole transport layer, light is emitted by the localized electric field by the Si nanoparticles. Since the layer is excited and quenching can be prevented, light having high intensity can be emitted from the light emitting layer.

  According to the light emission enhancing substrate and the light emitting element according to the present invention, the light emitting body can be excited strongly and quenching can be prevented, so that the light emission intensity can be remarkably improved.

It is sectional drawing which shows typically the light emission enhancement board | substrate which concerns on one Embodiment of this invention. It is sectional drawing which shows typically the light emitting element which concerns on one Embodiment of this invention. It is a graph which shows the relationship between the grinding | pulverization time of Si nanoparticle in the Example of this invention, and its particle size. It is a figure which shows the SEM image of the surface of the light emission enhancement board | substrate in the Example of this invention. (A) is a graph which shows the fluorescence spectrum of the crystal violet solution in the case where it does not use with the case where the light emission enhancing substrate in the Example of this invention is used, (b) is the light emission enhancement in the Example of this invention. It is a graph which shows the luminescence enhancement in each wavelength of the crystal violet solution obtained by using a substrate, (c) shows the relationship between the luminescence enhancement of the crystal violet solution and the particle size of the Si nanoparticles. It is a graph. (A) is a graph which shows the scattering spectrum of Si nanoparticle in the Example of this invention, (b) is a graph which shows the relationship between the particle size of Si nanoparticle, and scattering intensity.

  Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. The present invention is not limited to the following embodiment. Moreover, it can change suitably in the range which does not deviate from the range which has the effect of this invention.

  First, a light emission enhancing substrate according to an embodiment of the present invention will be described with reference to FIG. FIG. 1 is a cross-sectional view schematically showing a light emission enhancing substrate according to an embodiment of the present invention.

  As shown in FIG. 1, a light emission enhancing substrate 1 according to the present embodiment is used to enhance the light emission intensity of a light emitter, and is disposed on a substrate 2 and the surface of the substrate, and is made of a plurality of silicon (Si). The nanoparticle layer 4 is composed of a Si nanoparticle 3, and the nanoparticle layer 4 generates a localized electric field that generates scattered light when irradiated with light.

  In the present embodiment, the illuminant is energy when the electronic state such as molecules, ions, or atoms constituting the illuminant is excited from the ground state to the excited state by an external stimulus and then moves to the ground state. The difference is emitted to the outside as light. Note that light emission from such a light emitter is not limited to light emission (photoluminescence) caused by excitation of the light emitter with light of a predetermined wavelength, and for example, due to excitation of the light emitter by application of an electric field. It may be light emission (electroluminescence) or light emission (chemiluminescence) caused by excitation of a light emitter by a chemical reaction.

  Moreover, the board | substrate 2 used for the light emission enhancement board | substrate 1 of this embodiment will not be restrict | limited as long as the nanoparticle layer 4 can be arrange | positioned on the surface. For example, when it is desired to irradiate light from the substrate 2 side, a transparent substrate made of glass or the like can be used. Otherwise, a substrate made of resin or the like can be used in addition to the transparent substrate.

  In addition, Si as a material of the Si nanoparticles 3 used for the light emission enhancing substrate 1 of the present embodiment is not particularly limited in purity, and the localized electric field is generated when the Si nanoparticles 3 are irradiated with light. If it can generate | occur | produce, it is not necessary to use the high purity thing used for a semiconductor element. Further, it is not necessary to include particles such as metal in order to further enhance the local electric field. This is because quenching occurs due to the inclusion of metal particles, which may reduce the intensity of light emission. Moreover, it is preferable that the particle size of Si nanoparticle 3 is 240 nm or more and 2000 nm or less. As will be described in detail later, when the particle size of the Si nanoparticles 3 is within the range, the enhancement of light emission can be remarkably improved. Further, in the nanoparticle layer 4 composed of the Si nanoparticles 3, it is not necessary that the entire surface of the substrate 2 is covered with the Si nanoparticles 3, and as shown in FIG. It does not matter if there is a gap.

  As long as Si nanoparticle 3 is made of Si, its manufacturing method is not particularly limited, and for example, a ball milling method can be used. Using the ball milling method, Si nanoparticles can be easily produced from Si powder and the like, and the particle size can be easily adjusted by adjusting the rotation speed and grinding time of the ball mill device. .

  As a method of disposing the Si nanoparticles 3 on the substrate 1, when alcohol such as methanol is used as a solvent in the ball milling method, an alcohol solution in which the Si nanoparticles 3 are dispersed is applied to the substrate 1 and then dried. By doing so, the Si nanoparticles 3 can be disposed on the substrate 1. However, this method is not limited as long as the Si nanoparticles 3 can be disposed on the substrate 1. For example, vacuum deposition or the like may be used.

  With the configuration as described above, when the light emission enhancing substrate according to this embodiment is provided with a light emitter on its surface, for example, by receiving light from the light emitter, a nanoparticle layer composed of Si nanoparticles is high. Since a local electric field that generates intensity scattered light is generated and the light emitter can be excited by the local electric field, the light emission intensity of the light emitter can be enhanced. Furthermore, since the nanoparticle layer is composed of Si that is an indirect transition semiconductor, energy transfer from the excited light emitter to Si can be prevented, and quenching can be prevented. Thereby, the emitted light intensity can be remarkably enhanced.

  As described above, since the Si nanoparticles 3 can enhance the emission intensity, for example, they are used in biosensors that use fluorescence to detect a target substance, illumination with high brightness and low power consumption, organic EL displays, and the like. It is also possible to apply to a light emitting element.

  Next, a light-emitting element according to an embodiment of the present invention will be described with reference to FIG. FIG. 2 is a cross-sectional view schematically showing the light emitting device according to this embodiment.

  As shown in FIG. 2, the light emitting element 10 according to the present embodiment is a light emitting element used for an organic EL display, for example, and a transparent anode 12 made of ITO is formed on a transparent substrate 11 made of glass. Yes. A hole transport layer 13 is formed on the anode 12, and a light emitting layer 14 made of, for example, a p-type organic semiconductor layer 14 a and an n-type organic semiconductor layer 14 b is formed on the hole transport layer 13. . Here, between the hole transport layer 13 and the light emitting layer 14, a nanoparticle layer 4 composed of Si nanoparticles made of silicon is provided. On the light emitting layer 14, an electron transport layer 15 and a cathode 16 made of aluminum are sequentially formed.

  According to such a configuration, when a voltage is applied to the light emitting element 10, light is generated by combining holes and electrons in the light emitting layer 14. The nanoparticle layer 4 provided on the surface of the light-emitting layer 14 generates a local electric field by the light from the light-emitting layer 14. The light-emitting layer 14 is excited by the local electric field formed by the nanoparticle layer 4, and the light emission intensity is enhanced. Is done.

  In addition, the nanoparticle layer 4 used for the light emitting element 10 can be formed using the same thing as the Si nanoparticle used with the said light emission enhancing substrate. That is, there is no particular limitation on the purity of Si used as the material for the Si nanoparticles, and it is not necessary to include particles such as metals. Moreover, it is preferable that the particle size of Si nanoparticle is 240 nm or more and 2000 nm or less. Further, in the nanoparticle layer 4 composed of Si nanoparticles, it is not necessary that the entire surface of the interface between the hole transport layer 13 and the light emitting layer 14 is covered with the Si nanoparticles, and there is a gap between the Si nanoparticles. There is no problem. As long as Si nanoparticles are made of Si, the production method is not particularly limited, and for example, a ball milling method can be used.

  As described above, according to the light emission enhancing substrate and the light emitting element according to the embodiment of the present invention, the light emitter can be excited and the quenching can be prevented by the local electric field that generates the high-intensity scattered light generated by the Si nanoparticles. The emission intensity can be enhanced.

  Below, the Example for demonstrating in detail about the light emission enhancing substrate which concerns on this invention is shown. In this example, Si nanoparticles having various particle diameters were produced by the ball milling method, and the relationship between the particle diameter and the increase in emission intensity was examined.

  First, a method for producing Si nanoparticles will be described. In this example, Si nanoparticles were produced by a ball milling method using Si powder as a material and a planetary ball mill apparatus (premium line P-7, manufactured by FRITSCH). Specifically, pulverized balls (φ = 3 mm) made of WC and Si powder were placed in a pulverized container made of tungsten carbide (WC) of a planetary ball mill apparatus, and Si powder was pulverized using methanol as a solvent. Here, the rotational speed of the planetary ball mill apparatus was 600 rpm. In addition, the production | generation of Si nanoparticle was confirmed also with the silicon wafer (P type, N type, and intrinsic) fractured | ruptured to several centimeter square by the ball milling method.

  Here, in order to obtain Si nanoparticles having a desired particle size, the relationship between the particle size and the pulverization time was examined. FIG. 3 shows the results of measuring the average particle size of the Si nanoparticles generated under each condition with the pulverization time being 30 minutes, 90 minutes, 165 minutes and 180 minutes. The average particle size was calculated by measuring the particle size of several particles using a scanning electron microscope (SEM). In addition, the particle diameter as used in this specification means the average particle diameter measured and calculated by said method.

  As shown in FIG. 3, the particle size of the Si nanoparticles became smaller as the pulverization time was increased. Specifically, when the pulverization time was 30 minutes, 90 minutes, 165 minutes, and 180 minutes, the particle diameters of the Si nanoparticles were 2000 nm, 700 nm, 500 nm, and 300 nm, respectively. When the pulverization time was 180 minutes and the supernatant of the solution obtained at that time was collected, the particle size of the Si nanoparticles dispersed in the supernatant was 240 nm (open diamonds in the figure) ). As described above, when the Si nanoparticles are produced by using the ball milling method, the particle size can be controlled by the pulverization time, so that Si nanoparticles having a desired particle size can be easily obtained. Hereinafter, when the Si nanoparticles having the above-mentioned particle sizes were produced, the above-described pulverization times were used.

  Next, a methanol solution in which Si nanoparticles produced by the ball milling method were dispersed was applied to the surface of ITO glass, and then dried. As a result, a light emission enhancing substrate in which a Si nanoparticle layer made of Si nanoparticles was formed on a substrate made of ITO glass was manufactured.

  Subsequently, the surface state of the light emission enhancement substrate was observed using SEM. The result is shown in FIG. Here, the emission enhancing substrate having Si nanoparticles having a particle size of about 500 nm manufactured with a pulverization time of 165 minutes was observed.

  As shown in FIG. 4, it was observed that Si nanoparticles were disposed on the surface of the light emission enhancing substrate. Note that the Si nanoparticles did not cover the entire surface of the substrate, and a portion having a gap between the Si nanoparticles was also observed. Further, the shape of the Si nanoparticles was not spherical or the like, and each did not show a regular shape.

  Next, the relationship between the particle size of the Si nanoparticles in the light emission enhancement substrate manufactured as described above and the enhancement of light emission of the light emitter was examined.

In this example, crystal violet (CV), which is an organic dye molecule, was used as a light emitter, and a CV solution having a concentration of 10 ⁻³ M (solvent was methanol) was prepared. After the prepared CV solution was filled on a light emission enhancing substrate placed on a thin layer cell made of stainless steel, a cover glass was placed on the light emission enhancing substrate, and the fluorescence spectrum of CV was measured. Note that the particle size of the Si nanoparticles of the light emission enhancing substrate used at this time is 500 nm. As a control, a fluorescence spectrum was measured without using a light emission enhancing substrate. At this time, the measurement is performed under the same conditions as in the case of using the emission intensity substrate except that the nanoparticle layer is not provided on the ITO glass substrate.

  Furthermore, these measurements were performed using a light emission enhancing substrate having Si nanoparticles with each of the above particle sizes (240 nm, 300 nm, 500 nm, 700 nm and 2000 nm), and the enhancement of CV emission at each particle size. Was calculated. Specifically, the value obtained by dividing the value of the emission intensity when the emission enhancement substrate is used by the value of the emission intensity when the emission enhancement substrate is not used is shown as the enhancement intensity. The fluorescence spectrum was measured using a confocal microspectroscope (LabRAM HR-800, manufactured by HORIBA Jobin Yvon). The excitation light used was a He—Ne laser having a wavelength of 633 nm, and the objective lens was 100 times (NA = 0.6, SLMPLN100x, manufactured by Olympus).

  The results measured as described above will be described with reference to FIGS. FIG. 5A shows a CV fluorescence spectrum in the case of using a light emission enhancement substrate on which Si nanoparticles having a particle size of 500 nm are arranged, and a CV fluorescence spectrum measured without using the light emission enhancement substrate. ing. In addition, since the light intensity measured without using the light emission intensity substrate was extremely small and difficult to show in the figure, the obtained value is shown by 300 times. FIG.5 (b) is a graph which shows the increase | augmentation intensity | strength of light emission of each wavelength of CV at the time of using the light emission enhancing substrate in (a). FIG. 5 (c) shows the enhancement of CV emission (wavelength is 633 nm) when using an emission enhancement substrate on which Si nanoparticles having a particle size of 240 nm, 300 nm, 500 nm, 700 nm, and 2000 nm are respectively disposed. It is the shown graph.

  As shown in FIGS. 5A and 5B, when the light emission enhancing substrate was used, the light emission intensity of CV was remarkably enhanced. Specifically, when a light emission enhancing substrate having Si nanoparticles having a particle size of 500 nm was used, CV light emission could be enhanced up to about 2400 times depending on the wavelength. In addition, when comparing the intensity of light having a wavelength of 633 nm in Si nanoparticles of each particle size, as shown in FIG. 5C, the particle size of the Si nanoparticles of the light emission enhancing substrate is in the range of 240 nm to 2000 nm. The emission intensity of CV could be enhanced at any particle size. In particular, when the particle diameter was 500 nm, the emission intensity of CV was enhanced most, and the intensity increased about 2000 times. In addition, even when the grain size of 2000 nm, which had the smallest enhancement in the above range, was used, it was confirmed that the enhancement was about 165 times.

  Next, since strong Rayleigh scattering can be observed by forcibly oscillating electrons, whether or not the enhancement effect of the emission intensity as described above is due to the localized electric field that generates scattered light on the Si nanoparticles is examined. Therefore, the scattering intensity of Si nanoparticles with each particle size (240 nm, 300 nm, 500 nm, 700 nm, and 2000 nm) was measured. FIG. 6A shows a scattering spectrum of Si nanoparticles having each particle diameter, and FIG. 6B is a graph showing the scattering intensity of each particle diameter with respect to light having a wavelength of 633 nm. The scattering spectrum was measured using a dark field microscope using the same device as the above fluorescence spectrum measurement, irradiating a ring-shaped white light around the objective lens with a halogen light source unit (KL1500LCD, manufactured by Carl Zeiss). did.

  As shown to Fig.6 (a), Si nanoparticle showed the scattering spectrum which changes for every particle size. It can be seen that the wavelength of light at which the scattering intensity reaches a peak is different for each particle size. Further, when the scattering intensity for light having a wavelength of 633 nm is compared with each particle diameter, as shown in FIG. 6B, the scattering intensity decreases as the particle diameter becomes 500 nm at the maximum and becomes larger or smaller. It was. This correlates with the increase in the emission intensity, suggesting that the enhancement of the emission intensity by the Si nanoparticles is due to the local electric field generated when the Si nanoparticles are irradiated with light.

  INDUSTRIAL APPLICABILITY The present invention can increase the intensity of light emitted from a light emitter, and can be used for a biosensor that uses fluorescence to detect a target substance, and a light-emitting element used in an organic EL display or LED illumination. .

DESCRIPTION OF SYMBOLS 1 Luminescence enhancement board | substrate 2 Substrate 3 (Si) nanoparticle 4 Nanoparticle layer 10 Light emitting element 11 Transparent substrate 12 Anode 13 Hole transport layer 14 Light emitting layer 14a p-type organic semiconductor layer 14b n-type organic semiconductor layer 15 Electron transport layer 16 Cathode

Claims (5)

A light emission enhancing substrate used to enhance the light emission intensity of a light emitter,
A substrate,
A nanoparticle layer disposed on the surface of the substrate and composed of a plurality of nanoparticles made of silicon;
The emission enhancement substrate, wherein the nanoparticle layer generates a localized electric field when irradiated with light.   The light emission enhancement substrate according to claim 1, wherein the nanoparticle layer does not contain a metal.   The emission enhancement substrate according to claim 1 or 2, wherein the nanoparticles have a particle size of 240 nm or more and 2000 nm or less.   The emission enhancement substrate according to any one of claims 1 to 3, wherein the nanoparticles are formed by a ball milling method. A transparent substrate; an anode formed on the transparent substrate; a hole transport layer formed on the anode; a light emitting layer formed on the hole transport layer; A light emitting device comprising: an electron transport layer formed on the cathode; and a cathode formed on the electron transport layer,
Between the said light emitting layer and the said positive hole transport layer, the nanoparticle layer comprised by the several nanoparticle which consists of silicon is provided, The light emitting element characterized by the above-mentioned.