JP2014022735A5

JP2014022735A5 -

Info

Publication number: JP2014022735A5
Application number: JP2013146421A
Authority: JP
Filing date: 2013-07-12
Publication date: 2016-09-01
Anticipated expiration: 2033-07-12

Claims

A free layer having a first magnetic moment that is switchable between a plurality of stable magnetic states when a write current passes through the magnetic junction;
A symmetric filter for transmitting charge carriers having a first symmetry with a higher probability than charge carriers having a second symmetry;
A pinned layer having a second magnetic moment fixed in one direction,
The symmetrical filter is interposed between the free layer and the pinned layer;
At least one of the pinned layer and the free layer has the first symmetric charge carrier at a Fermi level in one spin channel and the first symmetry at a Fermi level in another spin channel. Having a non-zero magnetic moment element that is depleted of, is disposed in-plane and is perpendicular to the plane,
A magnetic junction having a lattice mismatch of less than 7 percent between the symmetric filter and at least one of the pinned layer and the free layer.

The magnetic junction of claim 1 wherein the lattice mismatch is lower than 4 percent.

The magnetic junction of claim 1, wherein the symmetric filter comprises at least one of Ge, GaAs, and ZnSe.

The magnetic junction of claim 1, wherein at least one of the free layer and the pinned layer comprises at least one of MnGa and MnIn.

A spacer layer;
An additional pinned layer,
The spacer layer is interposed between the free layer and the additional pinned layer;
The magnetic junction of claim 1, wherein the additional pinned layer has a third magnetic moment.

Includes AlMn having a (001) axis parallel to the plane and perpendicular to the plane, and has a first magnetic moment that is switched between a number of stable magnetic states when the write current passes through the magnetic junction. And having a first symmetric charge carrier at the Fermi level in the first plurality of spin channels, the first symmetric charge carrier being depleted in the first few spin channels, and the first magnetic moment Is a free layer having a first non-zero element perpendicular to the plane;
A symmetric filter that transmits the charge carrier having the first symmetry, attenuates the charge carrier having a second symmetry different from the first symmetry, and includes at least one of Ge, GaAs, and ZnSe;
A second magnetic moment that is parallel to the surface and includes a second non-zero element that is perpendicular to the surface, the AlMn having a (001) axis that is perpendicular to the surface, and is fixed in one direction. And having a first symmetric charge carrier at the Fermi level in a second plurality of spin channels and depleting the first symmetric charge carrier in a second few spin channels A layer, and
A magnetic junction for a magnetic memory element, wherein the symmetric filter is interposed between the free layer and the fixed layer.

At least one selection element and at least one magnetic junction, the at least one magnetic junction comprising a free layer, a pinned layer, and a symmetrical filter interposed between the free layer and the pinned layer; The free layer has a first magnetic moment that switches between a plurality of stable magnetic states when a write current passes through the magnetic junction, and the symmetric filter includes charge carriers having a first symmetry; Transmitting with higher probability than the charge carriers having two symmetry, the pinned layer has a second magnetic moment pinned in one direction, and at least one of the free layer and the pinned layer is The first symmetric charge at the Fermi level in the second spin channel with the first symmetric charge carrier at the Fermi level in one spin channel The carrier is depleted, has a non-zero magnetic moment element disposed in-plane and perpendicular to the plane, and the symmetric filter and at least one of the free layer and the pinned layer is greater than 7 percent A plurality of magnetic storage cells having low lattice mismatch;
A plurality of bit lines coupled to the plurality of magnetic storage cells;
And a plurality of word lines coupled to the plurality of magnetic storage cells.

A first non-zero element that is parallel to a plane and has a first magnetic moment that switches between a plurality of stable magnetic states when a read current passes through, the first magnetic moment being perpendicular to the plane; Having a free layer;
A pinned layer having a second magnetic moment parallel to the surface and fixed in one direction;
A symmetric filter interposed between the free layer and the pinned layer,
The second magnetic moment has a second non-zero element perpendicular to the plane;
At least one of the free layer and the pinned layer has a first symmetric charge carrier at Fermi energy within a first majority of spin channels, and the first symmetry with a first few spin channels. Are depleted of charge carriers,
The symmetrical filter transmits the charge carrier having the first symmetry and attenuates the charge carrier having a second symmetry different from the first symmetry;
The magnetic junction for a magnetic memory element, wherein the symmetric filter and at least one of the free layer and the pinned layer have a lattice mismatch of less than 7 percent.

Parallel to the plane and having a first magnetic moment that switches between a plurality of stable magnetic states when the read current passes through, and a first symmetry at the Fermi level in the first plurality of spin channels. A free layer having charge carriers, depleted of the first symmetric charge carriers in a first minority spin channel, and wherein the first magnetic moment has a first non-zero element perpendicular to the plane;
A symmetric filter for transmitting charge carriers having the first symmetry and attenuating charge carriers having a second symmetry different from the first symmetry;
Having a second magnetic moment parallel to the plane and fixed in one direction, having the first symmetric charge carrier at the Fermi level in a second plurality of spin channels, and a second minority A pinned layer having a second non-zero element that is depleted of the first symmetric charge carriers in the spin channel and wherein the second magnetic moment is perpendicular to the plane;
The symmetrical filter is interposed between the fixed layer and the free layer;
A magnetic junction for a magnetic memory element, wherein the symmetric filter and at least one of the free layer and the pinned layer have a lattice mismatch of less than 7 percent.

A magnetic junction stack including a free layer film, a pinned layer film, and a symmetric filter film is provided, wherein the symmetric filter film transmits charge carriers having a first symmetry and attenuates the charge carriers having a second symmetry. The first symmetric charge at a Fermi level in one spin channel, wherein at least one of the fixed layer film and the free layer film is interposed between the free layer film and the fixed layer film. A non-zero magnetic moment element having carriers, wherein the first symmetric charge carriers at the Fermi level in the other spin channel are depleted, placed in-plane and perpendicular to the plane, and the symmetric filter A film and at least one of the free layer film and the pinned layer film have a lattice mismatch of less than 7 percent;
A free layer defined from the free layer film, a symmetric filter defined from the symmetric filter film, a pinned layer defined from the pinned layer film, the free layer having a first magnetic moment, Defining a magnetic junction in which the pinned layer has a second magnetic moment;
Setting the second magnetic moment of the pinned layer fixed in a specific direction,
A method of manufacturing a magnetic junction for a magnetic memory element, wherein the magnetic junction is configured such that the first magnetic moment switches between a plurality of stable magnetic states when a read current passes through the magnetic junction.