JP2014007224A - Shape detector and shape detection method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a shape detector capable of detecting the shape in the depth direction of a TSV or the like formed in a substrate.SOLUTION: A shape detector 100 includes: irradiation units 102, 104 for irradiating a substrate having a recess formed therein with polarized light beam; a light receiving unit 106 for receiving either a reflected part or a transmitted part of the polarized light beam having been radiated from the irradiation units 102, 104 to the substrate; and a shape detection unit 110 for detecting the depth shape of the recess on the basis of either the intensity or phase of the polarized light beam received by the light receiving unit 106.

Description

  The present invention relates to a shape detection device and a shape detection method.

A technique for evaluating a substrate such as a relative position shift between bonded substrates is known (see, for example, Patent Document 1).
[Patent Document 1] JP 2010-98013 A

  However, there is a problem that the shape in the depth direction (depth shape) cannot be detected in the shape formed on the substrate.

  In the first aspect of the present invention, an irradiation unit for irradiating polarized light in the infrared band onto the substrate on which the concave portion is formed, a light receiving unit for receiving the polarized light irradiated on the substrate from the irradiation unit, and the light receiving unit A shape detection device is provided that includes a shape detection unit that detects a depth shape of the recess based on the polarized light received by the light source.

  In the second aspect of the present invention, the irradiation step of irradiating polarized light onto the substrate on which the concave portion is formed, the light receiving step of receiving the polarized light irradiated to the substrate from the irradiation unit, and the light receiving unit received the light. A shape detection method comprising: a shape detection step of detecting a depth shape of the recess based on the polarized light.

  It should be noted that the above summary of the invention does not enumerate all the necessary features of the present invention. In addition, a sub-combination of these feature groups can also be an invention.

It is process drawing explaining a TSV formation process and a bonding process. It is process drawing explaining a TSV formation process and a bonding process. It is process drawing explaining a TSV formation process and a bonding process. It is process drawing explaining a TSV formation process and a bonding process. It is process drawing explaining a TSV formation process and a bonding process. It is process drawing explaining a TSV formation process and a bonding process. 1 is an overall configuration diagram of a shape detection device 100. FIG. 3 is a block diagram illustrating a control system of the shape detection apparatus 100. FIG. It is a figure explaining the intensity | strength and phase table 114. FIG. 4 is a cross-sectional view of a reference hole 120 of a via hole 92. FIG. 4 is a plan view of a reference hole 120 of a via hole 92. FIG. 5 is a cross-sectional view of a via hole 92 having a depth 1/2 shape 122. FIG. 5 is a cross-sectional view of a tapered shape 124 of a via hole 92. FIG. 6 is a cross-sectional view of a proportionally reduced shape 126 of a via hole 92. FIG. 3 is a cross-sectional view of a tapered shape 128 of a via hole 92. FIG. 3 is a cross-sectional view of a bowing shape 130 of a via hole 92. FIG. It is a graph of the calculation result which applied the FDTD method to reflected polarized light. It is a graph of the calculation result which applied the FDTD method to transmitted polarized light. 5 is a flowchart for explaining shape detection by the shape detection apparatus 100.

  Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention according to the claims. In addition, not all the combinations of features described in the embodiments are essential for the solving means of the invention.

  First, a manufacturing method of a laminated semiconductor device by a TSV (through silicon via) forming process and a bonding process will be described. 1 to 6 are process diagrams for explaining a TSV forming process and a bonding process. 1 to 6 show a manufacturing process by via first in which a TSV is formed before a semiconductor element.

  As shown in FIG. 1, for example, via holes 92 are formed in a substrate 90 made of silicon by an exposure apparatus, a developing apparatus, an etching apparatus, or the like. The via hole 92 is an example of a recess. In an example of a method for forming the via hole 92, a resist film is formed on one surface of the substrate 90, and then the resist film is exposed and developed in accordance with the pattern of the via hole 92. Next, the oxide film formed on the surface of the substrate 90 is etched by the patterned resist film. Via holes 92 are formed by dry etching the substrate 90 using the etched oxide film as a hard mask. An example of dry etching is reactive ion etching.

  Next, as shown in FIG. 2, an element isolation oxide film is formed on the inner peripheral surface of the via hole 92 and then filled with copper, polysilicon, or the like to form a TSV 98. An example of the oxide film forming method and the polysilicon filling method is a CVD (chemical vapor deposition) method. An example of the copper filling method is an electrolytic plating method.

  Next, as shown in FIG. 3, a semiconductor element 94 such as a transistor is formed in one surface of the substrate 90. The semiconductor element 94 is formed by forming a resist film on the substrate 90, implanting ions, and then performing impurity diffusion, thermal oxidation, or the like.

  Next, as shown in FIG. 4, a wiring layer 96 including the insulating film 82 and the wiring 84 is formed on one surface of the substrate 90. The wiring 84 is connected to the semiconductor element 94 and the TSV 98.

  Next, as shown in FIG. 5, the support substrate 86 is bonded to one surface of the wiring layer 96. In this state, the other surface of the substrate 90 is removed by mechanical polishing or the like from the position indicated by the dotted line to the position where one end of the TSV 98 is exposed. Thereafter, the support substrate 86 is removed.

  Next, as illustrated in FIG. 6, the substrate 90 on which the TSV 98 is formed and the substrate 90 are bonded to each other by a bonding apparatus. An example of a method for bonding the substrate 90 is bonding by heating and pressing. Another example of the method for bonding the substrate 90 is room temperature bonding in which surface treatment is performed with plasma or the like and bonding is performed at room temperature. Thereby, the bonded substrate 88 is completed. Thereafter, the laminated substrate 88 is separated into pieces, and the laminated semiconductor device 89 is completed.

  In the above example, the TSV 98 is formed by via first forming the TSV 98 before the semiconductor element 94. However, the TSV 98 may be formed by other methods. For example, as a method of forming TSV 98, vias forming TSV 98 between the formation of the semiconductor element 94 and the wiring layer 96, via last forming the TSV 98 after the wiring layer 96, and joining the substrate 90 and the substrate 90 to each other. The via after bonding for forming the TSV 98 can be raised.

  FIG. 7 is an overall configuration diagram of the shape detection apparatus 100. The via hole 92 of the substrate 90 shown in FIG. If not penetrating, the substrate 90 is thinned, for example, so that the via hole 92 penetrates the substrate 90. The via hole 92 is formed on one surface of the substrate 90. The surface on which the via hole 92 is formed is the front surface, and the other surface is the back surface. In the following description, it is assumed that the substrate 90 is made of silicon. The shape detection apparatus 100 specifies the depth shape of the TSV 98 by specifying the depth shape of the via hole 92. As illustrated in FIG. 7, the shape detection apparatus 100 includes a polarized light irradiation unit 102 for reflection, a polarized light irradiation unit 104 for transmission, and a light receiving unit 106. The reflection polarized light irradiation unit 102 and the transmission polarized light irradiation unit 104 are examples of the irradiation unit.

  The transmission polarized light irradiation unit 104 irradiates a part of the substrate 90 on which the via hole 92 is formed, with the infrared light emitted from the infrared lamp being converted into linearly polarized light by the polarization filter. The wavelength of the infrared rays irradiated by the transmission polarized light irradiation unit 104 is, for example, about 1.1 μm that can pass through the substrate 90. The transmitted polarized light irradiation unit 104 irradiates the back surface of the substrate 90 with polarized light incident at 45 ° with respect to the normal direction of the substrate 90.

  The reflected polarized light irradiation unit 102 irradiates a part of the substrate 90 on which the via hole 92 is formed, with the infrared light emitted from the infrared lamp being converted into linearly polarized light by a polarizing filter. The wavelength of the infrared ray irradiated by the polarized light irradiation unit for reflection 102 is about 1.1 μm, which is the same as the wavelength of the infrared ray irradiated by the polarized light irradiation unit for transmission 104, for example. The reflected polarized light irradiation unit 102 irradiates the surface of the substrate 90 with polarized light incident at 45 ° with respect to the normal direction of the substrate 90.

  The light receiving unit 106 receives reflected polarized light, which is polarized light that is reflected by the substrate 90 by the reflected polarized light irradiation unit 102. The light receiving unit 106 receives transmitted polarized light, which is polarized light that is transmitted through the substrate 90 by the transmission polarized light irradiation unit 104. The light receiving unit 106 outputs an electrical intensity signal corresponding to the intensity of the received polarized light. The light receiving unit 106 outputs an electrical phase signal corresponding to the phase of the received polarized light.

  FIG. 8 is a block diagram illustrating a control system of the shape detection apparatus 100. As illustrated in FIG. 8, the shape detection apparatus 100 includes a shape detection unit 110 and a storage unit 112.

  An example of the shape detection unit 110 is a computer. The shape detection unit 110 outputs an irradiation signal to the reflected polarization irradiation unit 102 to irradiate the reflected polarized light. The shape detection unit 110 outputs an irradiation signal to the transmission polarization irradiation unit 104 to irradiate transmission polarization. The shape detection unit 110 irradiates a part of the substrate 90 by the reflection polarized light irradiation unit 102 and the transmission polarized light irradiation unit 104 and then receives a part of the via hole of the substrate 90 based on the polarization received by the light receiving unit 106. The depth shape of TSV98 is detected by specifying the depth shape of 92. Specifically, the shape detection unit 110 acquires the intensity signal and the phase signal output from the light receiving unit 106. The intensity signals acquired by the shape detection unit 110 include p-polarized and s-polarized intensity signals of polarized light reflected by the substrate 90 and p-polarized and s-polarized intensity signals of polarized light transmitted through the substrate 90. The phase signal acquired by the shape detection unit 110 includes the p-polarized and s-polarized phase signals of the polarized light reflected by the substrate 90 and the p-polarized and s-polarized phase signals of the polarized light transmitted through the substrate 90. The shape detection unit 110 refers to the intensity / phase table 114 stored in the storage unit 112, acquires depth shape data corresponding to the acquired intensity signal and phase signal, and determines the shape of the TSV 98 from the shape of the via hole 92. Is identified. The shape detection unit 110 is connected to an exposure device 140, a developing device 142, an etching device 144, and a bonding device 146 that form the TSV 98. The shape detection unit 110 outputs the detected depth shape of the TSV 98 and countermeasures to the exposure device 140, the developing device 142, the etching device 144, and the bonding device 146. Here, the shape detection unit 110 may specify the cause of the TSV98 depth shape and output the depth shape only to the device that causes the TSV98. Further, measures against the depth shape of the TSV 98 are extracted from the measure table 116 stored in the storage unit 112. The countermeasure table 116 associates the depth shape of the TSV 98 with countermeasures. The countermeasure table may be stored in the storage unit of the exposure device 140, the developing device 142, the etching device 144, and the bonding device 146. In this case, the exposure device 140, the developing device 142, the etching device 144, and the bonding device 146 acquire the shape of the TSV 98 from the shape detection unit 110, and extract measures from the countermeasure table stored in each device.

FIG. 9 is a diagram for explaining the intensity / phase table 114. The shape detection unit 110 refers to the intensity / phase table 114 and acquires a depth shape corresponding to the intensity signal and the phase signal acquired from the light receiving unit 106. As shown in FIG. 9, the intensity / phase table 114 associates intensity change data related to the intensity of polarized light calculated by simulation, phase change data related to the phase of polarization, and known depth shape data. ing. The intensity change and the phase change were calculated by the following equations.
Strength change = (Strength of model shape / Strength of reference hole 120) −1 [Unit: None] (Formula 1)
Phase change = phase of model shape−phase of reference hole 120 [unit: rad] (Formula 2)
The reference hole is a hole as designed. The model shape is an example in which a depth shape, a taper shape, a proportionally reduced shape, a tapered shape, and a bowing shape are embodied, and specific shapes will be described later. For example, in the depth ½ shape, the intensity change data of the p-polarized light of the reflected polarization is 0.08, and the intensity change data of the p-polarized light of the reflected polarization in the bowing shape is −0.64. In the depth 1/2 shape, the s-polarized intensity change data of the reflected polarized light is −0.01, and the s-polarized intensity change data of the reflected polarized light in the tapered shape is −0.50. In the depth 1/2 shape, the p-polarized phase change data of the reflected polarized light is 0.02, and the p-polarized phase change data of the reflected polarized light in the tapered shape is 0.16.

  Based on the intensity / phase table 114, the shape detection unit 110 obtains the combination of the depth shape data closest to the combination of the intensity change data and the phase change data calculated from the intensity signal and the phase signal acquired from the light receiving unit 106, Extracted from the intensity / phase table 114, the depth shape of the TSV 98 is specified. For example, the shape detection unit 110 calculates a difference between the detected intensity change and phase change and all intensity changes and phase changes included in the intensity / phase table 114. The shape detection unit 110 determines the combination having the smallest sum of the absolute values of the differences between the combinations as the closest combination. Thereby, shape detection is complete | finished.

  Next, a method of creating the intensity / phase table 114 of FIG. 9 by simulation will be described. First, the six model shapes and simulation conditions of the via hole 92 to be simulated will be described.

  FIG. 10 is a cross-sectional view of the reference hole 120 of the via hole 92. FIG. 11 is a plan view of the reference hole 120 of the via hole 92. The reference hole 120 has a shape as designed. As shown in FIGS. 10 and 11, the reference hole 120 of the via hole 92 is formed in a cylindrical shape. The diameter DM of the reference hole 120 is 1 μm. The depth DP of the reference hole 120 is 2 μm. The substrate 90 is made of silicon having a refractive index of 3.4. The thickness TH of the substrate 90 is 3.2 μm. Around the substrate 90 and inside the reference hole 120 is air having a refractive index of 1. In FIG. 10, a region surrounded by a dotted square is a unit analysis region by simulation.

  The reflected polarized light RP is incident at 45 ° with respect to the Z direction from the + Z side of the analysis region. The transmitted polarized light TP is incident from the −Z side of the analysis region at 45 ° with respect to the Z direction. In the p-polarized light of the reflected polarized light RP and the transmitted polarized light TP, the direction parallel to the incident surface is the vibration direction of the electric field. In the s-polarized light of the reflected polarized light RP and the transmitted polarized light TP, the direction perpendicular to the incident surface is the vibration direction of the electric field.

  FIG. 12 is a cross-sectional view of the half-depth shape 122 of the via hole 92. The alternate long and short dash line indicates the reference hole 120. The diameter of the half depth shape 122 shown in FIG. 12 is the same as that of the reference hole 120. The depth of the half depth shape 122 is 1 μm, which is half the depth of the reference hole 120. The volume of the depth 1/2 shape 122 is ½ of the volume of the reference hole 120.

  FIG. 13 is a cross-sectional view of the tapered shape 124 of the via hole 92. The dotted line indicates the reference hole 120. The depth of the taper shape 124 shown in FIG. 13 is 2.55 μm. The diameter of the tapered shape 124 is 1.534 μm. The inner angle θ2 at the tip of the tapered shape 124 is 33.48 °. The volume of the tapered shape 124 is the same as the volume of the reference hole 120.

  FIG. 14 is a cross-sectional view of the proportionally reduced shape 126 of the via hole 92. The dotted line indicates the reference hole 120. As shown in FIG. 14, the depth of the proportionally reduced shape 126 is 1.5874 μm. The diameter of the proportional reduction shape 126 is 0.7937 μm. The volume of the proportionally reduced shape 126 is ½ of the volume of the reference hole 120.

  FIG. 15 is a cross-sectional view of the tapered shape 128 of the via hole 92. The dotted line indicates the reference hole 120. The depth of the tapered shape 128 shown in FIG. 15 is 2 μm. Up to a depth of 1 μm above the tapered shape 128 is formed in a cylindrical shape. From the depth 1 μm below the taper shape 128 to the deepest part, a conical shape is formed. The volume of the tapered shape 128 is 2/3 of the volume of the reference hole 120.

  FIG. 16 is a cross-sectional view of the bowing shape 130 of the via hole 92. The dotted line indicates the reference hole 120. The depth of the bowing shape 130 shown in FIG. 16 is about 2 μm. The depth of the bowing shape 130 is 2 μm. The depth of the bowing shape 130 from 0.2 μm to 1.0 μm is formed in a cylindrical shape having a diameter of 1.5 μm. The other region of the bowing shape 130 is formed in a cylindrical shape having the same diameter of 1 μm as the reference hole 120. The volume of the bowing shape 130 is 2/3 of the volume of the reference hole 120.

  The intensity and phase of polarized light were calculated by the FDTD method (Finite-difference time-domain method) for the via hole 92 having the shape shown in FIGS. FIG. 17 is a graph of calculation results obtained by applying the FDTD method to reflected polarized light. FIG. 18 is a graph of calculation results obtained by applying the FDTD method to transmitted polarized light. It is assumed that the via hole 92 is filled with air.

  17 and 18 show the intensity change and phase change of p-polarized light and s-polarized light. The intensity change and the phase change were calculated by the above-described Expression 1 and Expression 2, respectively. The model shape in Equation 1 and Equation 2 is the shape of the via hole 92 shown in FIGS.

  As shown in FIG. 17, it can be seen that the bowing shape 130 has large changes in the intensity and phase of the p-polarized light of the reflected polarized light. It can be seen that the taper shape 124 has a large change in the intensity of the p-polarized light and the s-polarized light of the reflected polarized light and a large phase change of the s-polarized light of the reflected polarized light.

  As shown in FIG. 18, in almost all model shapes, it can be seen that the intensity change of the transmitted polarized light is larger than the intensity change of the reflected polarized light. Since the transmitted polarized light is transmitted through the substrate 90, it is considered that the transmitted polarized light has a high information sensitivity in a deep region of each shape. In particular, it can be seen that the intensity change of the transmitted polarized light is large in the depth ½ shape 122, the proportional reduction shape 126, and the tapered shape 128. Based on these numerical values calculated by the simulation, the intensity / phase table 114 shown in FIG. 9 is created.

  Next, the operation of the shape detection apparatus 100 will be described. FIG. 19 is a flowchart for explaining shape detection by the shape detection apparatus 100. The shape detection is performed in a state before the via hole 92 is formed and the via hole 92 is filled with the conductive material.

  First, the shape detection unit 110 outputs an irradiation instruction to the reflection polarized light irradiation unit 102 (S10). Thereby, the polarized light irradiation unit for reflection 102 irradiates the substrate 90 with the polarized light for reflection (S12). The light receiving unit 106 receives the reflected polarized light reflected by the substrate 90 and outputs an intensity signal and a phase signal to the shape detection unit 110 (S14). The shape detection unit 110 acquires the intensity signal and the phase signal of the reflected polarized light (S16).

  Next, the shape detection unit 110 outputs an irradiation instruction to the polarized light irradiation unit 104 for transmission (S18). Thereby, the polarized light irradiation unit for transmission 104 irradiates the substrate 90 with polarized light for transmission (S20). The light receiving unit 106 receives the transmitted polarized light transmitted through the substrate 90, and outputs an intensity signal and a phase signal to the shape detection unit 110 (S22). The shape detection unit 110 acquires an intensity signal and a phase signal of transmitted polarized light (S24).

  The shape detection unit 110 calculates an intensity change and a phase change for each of the acquired reflected polarization and transmitted polarization intensity signals and phase signals (S26). Next, the shape detection unit 110 refers to the intensity / phase table 114 and specifies the depth shape of the via hole 92 of the combination of the intensity change and the phase change that is closest to the calculated intensity change and phase change, thereby determining the TSV 98. The depth shape is specified (S28). Next, the shape detection unit 110 extracts a countermeasure for the specified depth shape from the countermeasure table 116, and adds the depth shape to any one of the exposure device 140, the developing device 142, the etching device 144, and the bonding device 146. And countermeasures are output (S30). Thereafter, the device that acquires the countermeasure responds according to the countermeasure. For example, when the shape detection unit 110 outputs the depth shape and the countermeasure to the bonding apparatus 146, the bonding apparatus 146 changes the alignment recipe, the heating and pressing recipe, and the like based on the countermeasure corresponding to the depth shape of the TSV 98. For example, in the case of the tapered shape 128, the joining device 146 applies pressure slowly in order to prevent the TSV 98 having the tapered shape 128 from being broken. In addition, the shape detection unit 110 may output the depth shape and the countermeasure to the device that causes the specified depth shape. For example, when the cause of the depth shape is specified as the etching device 144, the shape detection unit 110 outputs a countermeasure to the effect of changing the etching recipe to the etching device 144 together with the depth shape of the TSV 98.

  As described above, in the shape detection apparatus 100, the light receiving unit 106 receives polarized light, and the shape detection unit 110 determines the depth of the TSV 98 from the depth shape of the via hole 92 based on the intensity and phase of polarized light that varies depending on the depth shape. The shape can be specified. Thereby, a countermeasure can be considered based on the specified depth shape. For example, if the depth shape is determined to be the depth 1/2 shape 122, a measure to increase the time for etching the via hole 92 can be considered. Further, when the depth shape is determined to be the taper shape 124, a measure of adopting an etching method capable of anisotropic etching can be considered.

  The shape detection device 100 receives polarized light and specifies a depth shape corresponding to the intensity and phase of the polarized light. Thereby, the shape detection apparatus 100 can specify a depth shape more reliably.

  In the above-described embodiment, the depth shape is specified based on the intensity / phase table 114 in which both the intensity and the phase are associated with the depth shape. However, the depth shape is specified based on one of the intensity and the phase. May be. For example, when the depth shape is specified based on the intensity, the depth shape may be specified by an intensity table including only the left half intensity portion of the intensity / phase table 114 shown in FIG. Further, when the depth shape is specified based on the phase, the depth shape may be specified by a phase table including only the phase portion of the right half of the intensity / phase table 114 shown in FIG.

  In the above-described embodiment, the depth shape is specified based on the intensity change and the phase change with respect to the reference hole 120, but the depth shape is determined based on other intensity data and phase data, for example, the absolute value data of the intensity or the phase. The shape may be specified.

  In the above-described embodiment, the depth shape is specified based on the reflected polarized light and the transmitted polarized light, but the depth shape may be specified by either one. For example, when the depth shape is specified based on the reflected polarization, a reflected polarization table may be created based on the intensity change data and phase change data of the reflected polarization shown in FIG. In this case, even if the substrate 90 is thick, the light receiving unit 106 can receive the reflected polarized light, so that the probability of specifying the depth shape can be improved. When the depth shape is specified based on the transmitted polarization, a transmission polarization table may be created based on the transmitted polarization intensity change data and phase change data shown in FIG. In this case, since the shape detection unit 110 specifies the depth shape of the via hole 92 by the highly sensitive transmitted polarized light in the deep region of the via hole 92, the accuracy of the depth shape of the TSV 98 can be improved. Even when the intensity / phase table 114 is stored in the storage unit 112, the depth shape may be specified based on the intensity or phase of the acquired reflected polarized light or transmitted polarized light.

  In the above-described embodiment, the intensity / phase table is created by simulation, but the intensity / phase table may be generated from the measured polarization intensity and polarization phase by actual measurement.

  In the above-described embodiment, the light receiving unit 106 is configured to receive the polarized light reflected or transmitted through the substrate 90, but the light receiving unit 106 may receive the polarized light diffracted by the substrate 90.

  In the above-described embodiment, the example in which the shape detection unit 110 detects the depth shape of a part of the TSV 98 of the substrate 90 has been described. However, the shape detection unit 110 includes the reflection polarized light irradiation unit 102 and the transmission polarized light irradiation unit. The depth shape of the TSV 98 in the entire area of the substrate 90 may be detected at a time based on the polarized light received by the light receiving unit 106 after being irradiated on the entire area of the substrate 90 by 104.

  In the above-described embodiment, the wavelength of polarized light to be irradiated is 1.1 μm, but the wavelength of polarized light may be changed as appropriate. For example, the wavelength of polarized light may be 700 nm to 1200 nm. In particular, the polarized light for transmission has a wavelength that transmits the substrate 90. Therefore, when the substrate 90 is made of a material other than silicon, the polarization wavelength is set in accordance with the substrate 90.

  In the embodiment described above, the polarized light to be irradiated is linearly polarized light, but may be circularly polarized light.

  In the embodiment described above, the reflective polarized light irradiation unit 102 and the light receiving unit 106 are disposed above the substrate 90 and the transmitted polarized light irradiation unit 104 is disposed below the substrate 90 in FIG. For example, the reflective polarized light irradiation unit 102 and the light receiving unit 106 may be disposed below the substrate 90, and the transparent polarized light irradiation unit 104 may be disposed above. In this way, the reflected polarized light becomes sensitive to the shape change of the bottom portion of the via hole 92, and the accuracy of specifying the shape of the bottom portion of the via hole 92 is improved. As a result, the detection accuracy of the depth shape of the TSV 98 is improved. Further, the light receiving unit 106 may be disposed above and below the substrate 90, respectively. In this case, it is necessary to provide an intensity / phase table separately for the light received by the upper light receiving unit and for the light received by the lower light receiving unit, but the accuracy of shape specification is improved as the information increases.

  As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

  The order of execution of each process such as operations, procedures, steps, and stages in the apparatus, system, program, and method shown in the claims, the description, and the drawings is particularly “before” or “prior to”. It should be noted that the output can be realized in any order unless the output of the previous process is used in the subsequent process. Regarding the operation flow in the claims, the description, and the drawings, even if it is described using “first”, “next”, etc. for convenience, it means that it is essential to carry out in this order. It is not a thing.

  82 insulating film, 84 wiring, 86 support substrate, 88 bonded substrate, 89 laminated semiconductor device, 90 substrate, 92 via hole, 94 semiconductor element, 96 wiring layer, 98 TSV, 100 shape detection device, 102 reflective polarized light irradiation unit, 104 transmission polarized light irradiation unit, 106 light receiving unit, 110 shape detection unit, 112 storage unit, 114 intensity / phase table, 116 countermeasure table, 120 reference hole, 122 depth 1/2 shape, 124 taper shape, 126 proportional reduction shape 128 tapered shape, 130 bowing shape, 140 exposure device, 142 developing device, 144 etching device, 146 bonding device

Claims (13)

An irradiation unit for irradiating polarized light to the substrate on which the recess is formed;
A light receiving unit that receives the polarized light applied to the substrate from the irradiation unit;
A shape detection apparatus comprising: a shape detection unit that detects a depth shape of the recess based on the polarized light received by the light receiving unit. The shape detector
The shape detection device according to claim 1, wherein the depth shape of the concave portion is specified with reference to an intensity table in which depth shape data related to a known depth shape and intensity data related to the intensity of polarized light are associated. The shape detector
The shape detection apparatus according to claim 2, wherein the depth shape of the recess is specified from the intensity table calculated by simulation. The shape detector
The shape detection apparatus according to claim 2, wherein a depth shape of the concave portion is specified from the intensity table generated by actual measurement. The shape detector
5. The depth shape of the concave portion is specified with reference to a phase table in which depth shape data related to a known depth shape and phase data related to a phase of polarization are related. The shape detection apparatus according to item 1. The shape detector
The shape detection apparatus according to claim 5, wherein a depth shape of the concave portion is specified from the phase table calculated by simulation. The shape detector
The shape detection apparatus according to claim 5, wherein a depth shape of the concave portion is specified from the phase table generated by actual measurement. The light receiving unit is
The shape detection apparatus according to claim 1, which receives the polarized light that has passed through the substrate. The light receiving unit is
The shape detection apparatus according to claim 1, which receives the polarized light reflected by the substrate. The light receiving unit is
The shape detection apparatus according to claim 1, which receives polarized light diffracted by the substrate. The shape detector
The shape detection apparatus according to any one of claims 1 to 10, wherein the irradiation unit detects a depth shape of the concave portion of a part of the substrate by polarized light applied to the part of the substrate. The shape detector
The shape detection device according to claim 1, wherein the irradiation unit detects a depth shape of the concave portion in the entire area of the substrate by polarized light applied to the entire area of the substrate. An irradiation step of irradiating polarized light onto the substrate on which the recess is formed;
A light receiving step for receiving the polarized light applied to the substrate in the irradiation step;
A shape detection method comprising: a shape detection step of detecting a depth shape of the recess based on the polarized light received in the light reception step.

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