JP2014003242A5 - - Google Patents
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- Publication number
- JP2014003242A5 JP2014003242A5 JP2012139155A JP2012139155A JP2014003242A5 JP 2014003242 A5 JP2014003242 A5 JP 2014003242A5 JP 2012139155 A JP2012139155 A JP 2012139155A JP 2012139155 A JP2012139155 A JP 2012139155A JP 2014003242 A5 JP2014003242 A5 JP 2014003242A5
- Authority
- JP
- Japan
- Prior art keywords
- solder
- light emitting
- light
- thermosetting resin
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910000679 solder Inorganic materials 0.000 claims 16
- 239000000463 material Substances 0.000 claims 15
- 229920001187 thermosetting polymer Polymers 0.000 claims 10
- 239000011347 resin Substances 0.000 claims 8
- 229920005989 resin Polymers 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000002844 melting Methods 0.000 claims 4
- 229910020830 Sn-Bi Inorganic materials 0.000 claims 2
- 229910018728 Sn—Bi Inorganic materials 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
Claims (10)
前記透光性を有する熱硬化性樹脂は、熱硬化に要する温度が１４０〜２５０℃であり、前記半田よりも多い重量で含有されており、
前記半田は、融点が１４０〜２５０℃であることを特徴とするダイボンド材。 A die-bonding material containing solder and a light reflecting material in a thermosetting resin having translucency,
The thermosetting resin having translucency has a temperature required for thermosetting of 140 to 250 ° C., and is contained in a larger weight than the solder.
The solder has a melting point of 140 to 250 ° C.
前記透光性を有する熱硬化性樹脂は、前記半田よりも多い重量で含有されており、前記半田の融点と同等の温度で硬化する樹脂であることを特徴とするダイボンド材。 A die-bonding material containing solder and a light reflecting material in a thermosetting resin having translucency,
The die-bonding material, wherein the light-transmitting thermosetting resin is contained in a weight greater than that of the solder and is cured at a temperature equivalent to the melting point of the solder.
前記半田は、融点が１４０〜２００℃である請求項１〜４のいずれか１つに記載のダイボンド材。 The thermosetting resin has a temperature required for thermosetting of 140 to 200 ° C.,
The die bond material according to any one of claims 1 to 4, wherein the solder has a melting point of 140 to 200 ° C.
該発光素子を搭載し、表面に互いに分離された配線を有する基板を備えた発光装置であって、
前記基板表面の配線と、前記発光素子の一対の電極とが、請求項１から５のいずれか１つに記載のダイボンド材でそれぞれ電気的に接続されている発光装置。 A light emitting device comprising: a light emitting element having a pair of electrodes arranged on the same side of a semiconductor layer stack structure; and a substrate having the light emitting element mounted thereon and wirings separated from each other on the surface.
6. A light-emitting device in which the wiring on the substrate surface and the pair of electrodes of the light-emitting element are electrically connected to each other by the die bond material according to claim 1.
該発光素子を搭載し、表面に互いに分離された配線を有する基板を備えた発光装置の製造方法であって、
前記基板表面に、透光性を有する熱硬化性樹脂中に半田及び光反射材が含有され、かつ前記熱硬化性樹脂が前記半田よりも多い重量で含有されたダイボンド材を供給する工程と、
前記ダイボンド材上に発光素子を配置する工程と、
前記熱硬化性樹脂を硬化させると同時に前記半田を溶融させる加熱工程と、を含み、
前記溶融された半田によって、前記基板表面の配線と前記発光素子の一対の電極とを、それぞれ電気的に接続する発光装置の製造方法。 A method of manufacturing a light emitting device comprising a light emitting element having a pair of electrodes arranged on the same surface side of a semiconductor layer stacked structure, and a substrate having the light emitting element mounted thereon and wirings separated from each other on the surface,
Supplying a die bond material containing solder and a light reflecting material in a thermosetting resin having translucency on the surface of the substrate and containing the thermosetting resin in a larger weight than the solder; and
Arranging a light emitting element on the die bond material;
A heating step of curing the thermosetting resin and simultaneously melting the solder,
A method for manufacturing a light emitting device, wherein the wiring on the substrate surface and the pair of electrodes of the light emitting element are electrically connected to each other by the melted solder.
The manufacturing method of the light-emitting device according to claim 8 or 9, wherein the heating step is performed at 140 to 250 ° C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012139155A JP6490328B2 (en) | 2012-06-20 | 2012-06-20 | Light emitting device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012139155A JP6490328B2 (en) | 2012-06-20 | 2012-06-20 | Light emitting device and manufacturing method thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014003242A JP2014003242A (en) | 2014-01-09 |
| JP2014003242A5 true JP2014003242A5 (en) | 2015-05-14 |
| JP6490328B2 JP6490328B2 (en) | 2019-03-27 |
Family
ID=50036117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012139155A Active JP6490328B2 (en) | 2012-06-20 | 2012-06-20 | Light emitting device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6490328B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015153981A (en) * | 2014-02-18 | 2015-08-24 | 日亜化学工業株式会社 | light-emitting device |
| US9812625B2 (en) | 2014-02-18 | 2017-11-07 | Nichia Corporation | Light-emitting device having resin member with conductive particles |
| JP7428916B2 (en) | 2021-12-27 | 2024-02-07 | 日亜化学工業株式会社 | Method for manufacturing a light emitting device and light emitting device |
| CN116169231B (en) * | 2023-04-21 | 2023-07-18 | 惠科股份有限公司 | Light emitting device, display device, and method for manufacturing light emitting device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4591399B2 (en) * | 2006-04-03 | 2010-12-01 | パナソニック株式会社 | Part joining method and part joining structure |
| JP4107349B2 (en) * | 2007-06-20 | 2008-06-25 | ソニー株式会社 | Light source device, display device |
| JP5716281B2 (en) * | 2010-03-01 | 2015-05-13 | 日亜化学工業株式会社 | Light emitting device and manufacturing method thereof |
| JP5402804B2 (en) * | 2010-04-12 | 2014-01-29 | デクセリアルズ株式会社 | Method for manufacturing light emitting device |
| JP5710915B2 (en) * | 2010-09-09 | 2015-04-30 | シチズンホールディングス株式会社 | Semiconductor light emitting device |
-
2012
- 2012-06-20 JP JP2012139155A patent/JP6490328B2/en active Active
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