JP2014002339A - Electro-optic device and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electro-optic device and an electronic apparatus capable of improving display qualities.SOLUTION: The electro-optic device includes a pixel 40 which includes: a plurality of sub-pixels 41R, 41G, 41B having pixel electrodes 27R, 27G, 27B and a counter electrode 31, disposed opposing to each other, and emitting light in different colors; and a sub-pixel 41W having a pixel electrode 27W and the counter electrode 31 disposed opposing to each other and emitting white light different from the light from all of the sub-pixels 41R, 41G, 41B. The thickness of the pixel electrode 27W and the counter electrode 31 is controlled to be different from at least either the pixel electrodes 27R, 27G, 27B or the counter electrode 31 so as to substantially equalize the color of the white light W1 constituted by the plurality of sub-pixels 41R, 41G, 41B with the white light W2 displayed by the sub-pixel 41W.

Description

  The present invention relates to an electro-optical device and an electronic apparatus.

  As the electro-optical device, for example, an active drive type liquid crystal device including a transistor for each pixel as an element for controlling switching of a pixel electrode is known. Liquid crystal devices are used in, for example, direct view displays and light valves.

  In the liquid crystal device, for example, one display element is configured by red (R), green (G), and blue (B) pixels. Patent Document 1 discloses a liquid crystal device including red, green, blue, and white (W) pixels in order to brighten the screen.

U.S. Pat. No. 7,286,136

  However, when the white light composed of red (R), green (G), and blue (B) and the white light composed of a single white (W) are different in color, color unevenness occurs or is rough. There is a problem that display quality deteriorates.

  An aspect of the present invention has been made to solve at least a part of the above problems, and can be realized as the following forms or application examples.

  Application Example 1 An electro-optical device according to this application example includes a first pixel electrode and a first counter electrode arranged to face each other, and a plurality of first sub-pixels that emit red light, green light, and blue light, A first white light comprising a pixel having a second pixel electrode and a second counter electrode arranged opposite to each other, and a second sub-pixel that emits white light; and configured by the plurality of first sub-pixels; The thickness of the second pixel electrode and the second counter electrode and at least the first pixel electrode and the first counter so that the color of the second white light displayed by the second sub-pixel is substantially the same. The thickness of one of the electrodes is different.

  According to this application example, the first white light and the second white light are changed by changing the film thickness of at least one of the first pixel electrode and the first counter electrode with respect to the film thickness of the second pixel electrode and the second counter electrode. Are substantially the same color, it is possible to suppress color variations between the second sub-pixel formed by one sub-pixel and the first sub-pixel formed by a plurality of sub-pixels. Therefore, it is possible to improve display quality, for example, white unevenness can be suppressed and a smooth image can be obtained.

  Application Example 2 In the electro-optical device according to the application example described above, the thickness of at least one of the first pixel electrode and the first counter electrode is larger than the thickness of the second pixel electrode and the second counter electrode. It is preferable to make it thin or thin.

  According to this application example, when the film thickness of the first sub-pixel (first pixel electrode, first counter electrode) is reduced with respect to the second sub-pixel (second pixel electrode, second counter electrode), for example, green The blue color tone can be made stronger than the color tone. Further, when the film thickness of the first sub-pixel is increased with respect to the second sub-pixel, for example, the red color tone can be made stronger than the green color tone. The white color tone can be adjusted by these adjustments.

  Application Example 3 In the electro-optical device according to the application example described above, the interval between the first pixel electrode and the first counter electrode is the same as the interval between the second pixel electrode and the second counter electrode. It is preferable.

  According to this application example, since the distance between each pair of electrodes is the same, even when the film thickness is changed to match the white light of the first subpixel and the white light of the second subpixel, Between the electrodes (in other words, the thickness of the liquid crystal layer) can be made the same, and the occurrence of color unevenness can be further suppressed.

  Application Example 4 In the electro-optical device according to the application example, when the color tone of the first white light is closer to blue than the second white light, the first pixel electrode and the first counter electrode Of these, it is preferable that at least one of the thicknesses is thicker than the thicknesses of the second pixel electrode and the second counter electrode.

  According to this application example, the transmittance in the blue wavelength region can be reduced by increasing the film thickness of each electrode of the first sub-pixel compared to the film thickness of each electrode of the second sub-pixel. it can. In other words, it is possible to change from a blue color tone to a red color tone. Therefore, the first white light having a blue color tone can be brought close to white, and color unevenness between the second white light and the first white light can be suppressed.

  Application Example 5 In the electro-optical device according to the application example, when the color tone of the first white light is closer to yellow compared to the second white light, the first pixel electrode and the first counter electrode Of these, it is preferable to make at least one of the film thicknesses thinner than the film thicknesses of the second pixel electrode and the second counter electrode.

  According to this application example, it is possible to increase the transmittance in the blue wavelength region by reducing the film thickness of each electrode of the first subpixel compared to the film thickness of each electrode of the second subpixel. it can. In other words, it is possible to change from a yellow color tone to a blue color tone. Therefore, the first white light having a yellow color tone can be brought close to white, and color unevenness between the second white light and the first white light can be suppressed.

  Application Example 6 In the electro-optical device according to the application example described above, the film thickness of the second pixel electrode and the second counter electrode is a film thickness including a maximum point of transmittance in a green visible light wavelength region. Is preferred.

  According to this application example, by setting the second pixel electrode and the second counter electrode to a film thickness including the maximum point of transmittance in the visible light wavelength region, the irradiated light can be transmitted as it is. Can be used as a reference for white light.

  Application Example 7 In the electro-optical device according to the application example, it is preferable that the plurality of first sub-pixels are red, green, and blue, and the second sub-pixel is white.

  According to this application example, the first white light and the second white light can be obtained by bringing the first white light composed of red, green, and blue and the second white light composed of white close to each other. Color unevenness can be suppressed, and display quality can be improved.

  Application Example 8 An electronic apparatus according to this application example includes the electro-optical device described above.

  According to this application example, it is possible to provide an electronic apparatus that can suppress color unevenness and improve display quality.

1 is a schematic plan view illustrating a configuration of a liquid crystal device according to a first embodiment. FIG. 2 is a schematic cross-sectional view taken along the line H-H ′ of the liquid crystal device illustrated in FIG. 1. FIG. 3 is an equivalent circuit diagram illustrating an electrical configuration of the liquid crystal device. FIG. 3 is a schematic cross-sectional view illustrating a structure of a liquid crystal device. The schematic plan view which shows the arrangement | sequence of the sub pixel which comprises a pixel. FIG. 6 is a schematic cross-sectional view taken along the line A-A ′ of the pixel shown in FIG. 5. FIG. 6 is a schematic cross-sectional view taken along the line A-A ′ of the pixel shown in FIG. 5. The graph which shows the spectral transmittance at the time of changing the film thickness of the pixel electrode in each sub pixel. Schematic which shows the structure of the projection type display apparatus as an electronic device provided with the liquid crystal device. FIG. 6 is a schematic cross-sectional view illustrating a configuration of a sub pixel according to a second embodiment. FIG. 3 is a schematic cross-sectional view illustrating a configuration of a sub pixel. FIG. 9 is a schematic cross-sectional view illustrating a configuration of a sub pixel according to a third embodiment. FIG. 3 is a schematic cross-sectional view illustrating a configuration of a sub pixel. The graph which shows the spectral transmittance at the time of changing the film thickness of a pixel electrode and a counter electrode.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings. Note that the drawings to be used are appropriately enlarged or reduced so that the part to be described can be recognized.

  In the following embodiments, for example, when “on the substrate” is described, the substrate is disposed so as to be in contact with the substrate, or is disposed on the substrate via another component, or the substrate. It is assumed that a part is arranged so as to be in contact with each other and a part is arranged via another component.

  In the present embodiment, an active matrix liquid crystal device including a thin film transistor (TFT) as a pixel switching element will be described as an example of an electro-optical device. This liquid crystal device can be suitably used, for example, as a light modulation element (liquid crystal light valve) of a projection display device (liquid crystal projector).

(First embodiment)
<Configuration of liquid crystal device>
FIG. 1 is a schematic plan view showing the configuration of the liquid crystal device. 2 is a schematic cross-sectional view taken along the line HH ′ of the liquid crystal device shown in FIG. FIG. 3 is an equivalent circuit diagram showing an electrical configuration of the liquid crystal device. Hereinafter, the configuration of the liquid crystal device will be described with reference to FIGS.

  As shown in FIGS. 1 and 2, the liquid crystal device 100 according to the present embodiment includes an element substrate 10 and a counter substrate 20 that are disposed to face each other, and a liquid crystal layer 15 that is sandwiched between the pair of substrates. As the first base material 10a constituting the element substrate 10 and the second base material 20a constituting the counter substrate 20, for example, a transparent substrate such as a glass substrate or a quartz substrate is used.

  The element substrate 10 is larger than the counter substrate 20, and both the substrates are bonded via a sealing material 14 disposed along the outer periphery of the counter substrate 20. Liquid crystal layer 15 is configured by sealing liquid crystal having positive or negative dielectric anisotropy in the gap. For the sealing material 14, for example, an adhesive such as a thermosetting or ultraviolet curable epoxy resin is employed. Spacers (not shown) are mixed in the sealing material 14 to keep the distance between the pair of substrates constant.

  A pixel region E (display region) in which a plurality of pixels P are arranged is provided inside the sealing material 14. The pixel region E may include dummy pixels arranged so as to surround the plurality of pixels P in addition to the plurality of pixels P contributing to display. Although not shown in FIGS. 1 and 2, a light shielding portion (black matrix; BM) that divides a plurality of pixels P in the pixel area E in a plane is provided on the counter substrate 20.

  A data line driving circuit 22 is provided between the sealing material 14 along one side of the element substrate 10 and the one side. In addition, an inspection circuit 25 is provided between the sealing material 14 and the pixel region E along the other one side facing the one side. Further, a scanning line driving circuit 24 is provided between the sealing material 14 and the pixel region E along the other two sides orthogonal to the one side and facing each other. A plurality of wirings 29 connecting the two scanning line driving circuits 24 are provided between the sealing material 14 and the inspection circuit 25 along the other one side facing the one side.

  Inside the sealing material 14 arranged in a frame shape on the counter substrate 20 side, a light shielding portion 18 (parting portion) is also provided in the same frame shape. The light shielding portion 18 is made of, for example, a light shielding metal or metal oxide, and the inside of the light shielding portion 18 is a pixel region E having a plurality of pixels P. Although not shown in FIG. 3, the pixel region E is also provided with a light-shielding portion that divides a plurality of pixels P in a plane.

  Wirings connected to the data line driving circuit 22 and the scanning line driving circuit 24 are connected to a plurality of external connection terminals 61 arranged along the one side. Hereinafter, the direction along the one side will be referred to as the X direction, and the direction along the other two sides orthogonal to the one side and facing each other will be described as the Y direction. The arrangement of the inspection circuit 25 is not limited to this, and the inspection circuit 25 may be provided between the sealing material 14 along the data line driving circuit 22 and the pixel region E.

  As shown in FIG. 2, on the surface of the first base material 10a on the liquid crystal layer 15 side, a transparent pixel electrode 27 provided for each pixel P and a thin film transistor (TFT: Thin Film Transistor, which is a switching element) are provided. Hereinafter, the TFT is referred to as “TFT 30”), signal wirings, and a first alignment film 28 covering them.

  In addition, a light shielding structure is employed that prevents light from entering the semiconductor layer in the TFT 30 to make the switching operation unstable. The element substrate 10 in the present invention includes at least the pixel electrode 27, the TFT 30, the signal wiring, and the first alignment film 28.

  On the surface of the counter substrate 20 on the liquid crystal layer 15 side, a light shielding portion 18, a planarizing layer 33 formed so as to cover the light shielding portion 18, a counter electrode 31 provided so as to cover the planarizing layer 33, A second alignment film 32 covering the electrode 31 is provided. The counter substrate 20 in the present invention includes at least the light shielding portion 18, the counter electrode 31, and the second alignment film 32.

  As shown in FIG. 1, the light shielding unit 18 surrounds the pixel region E and is provided at a position where it overlaps the scanning line driving circuit 24 and the inspection circuit 25 in plan view (illustration is simplified). Thus, the light incident on the peripheral circuit including these drive circuits from the counter substrate 20 side is shielded, and the peripheral circuit is prevented from malfunctioning due to the light. Further, unnecessary stray light is shielded from entering the pixel region E to ensure high contrast in the display of the pixel region E.

  The planarization layer 33 is made of, for example, an inorganic material such as silicon oxide, and is provided so as to cover the light shielding portion 18 with light transmittance. As a method for forming such a planarization layer 33, for example, a method of forming a film by using a plasma CVD (Chemical Vapor Deposition) method or the like can be cited.

  The counter electrode 31 is made of a transparent conductive film such as ITO (Indium Tin Oxide), for example, covers the planarization layer 33, and includes an element substrate by vertical conduction portions 26 provided at the four corners of the counter substrate 20 as shown in FIG. It is electrically connected to the wiring on the 10 side.

  The first alignment film 28 that covers the pixel electrode 27 and the second alignment film 32 that covers the counter electrode 31 are selected based on the optical design of the liquid crystal device 100. For example, by depositing an organic material such as polyimide and rubbing the surface, an organic alignment film obtained by subjecting liquid crystal molecules having positive dielectric anisotropy to a substantially horizontal alignment process, or vapor phase growth Examples thereof include an inorganic alignment film formed by depositing an inorganic material such as SiOx (silicon oxide) using a method and substantially vertically aligning liquid crystal molecules having negative dielectric anisotropy. In the present embodiment, the inorganic alignment film is employed as the first alignment film 28 and the second alignment film 32.

  Such a liquid crystal device 100 is, for example, a transmissive type, and adopts an optical design of a normally white mode in which the pixel P is brightly displayed when not driven and a normally black mode in which the pixel P is darkly displayed when not driven. Polarizing elements are arranged and used according to the optical design on the light incident side and the light exit side, respectively. In this embodiment, a normally black mode is employed.

  As shown in FIG. 3, the liquid crystal device 100 includes a plurality of scanning lines 3 a and a plurality of data lines 6 a that are insulated and orthogonal to each other at least in the pixel region E, and a capacitor line 3 b. The direction in which the scanning line 3a extends is the X direction, and the direction in which the data line 6a extends is the Y direction.

  A pixel electrode 27, a TFT 30, and a capacitive element 16 are provided in a region divided by the scanning line 3a, the data line 6a, the capacitive line 3b, and these signal lines, and these constitute a pixel circuit of the pixel P. doing.

  The scanning line 3 a is electrically connected to the gate of the TFT 30, and the data line 6 a is electrically connected to the data line side source / drain region (source region) of the TFT 30. The pixel electrode 27 is electrically connected to the pixel electrode side source / drain region (drain region) of the TFT 30.

  The data line 6a is connected to the data line driving circuit 22 (see FIG. 1), and supplies image signals D1, D2,..., Dn supplied from the data line driving circuit 22 to the pixels P. The scanning line 3a is connected to the scanning line driving circuit 24 (see FIG. 1), and supplies the scanning signals SC1, SC2,..., SCm supplied from the scanning line driving circuit 24 to each pixel P.

  The image signals D1 to Dn supplied from the data line driving circuit 22 to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each of a plurality of adjacent data lines 6a for each group. Good. The scanning line driving circuit 24 supplies the scanning signals SC1 to SCm to the scanning line 3a in a pulse-sequential manner at a predetermined timing.

  In the liquid crystal device 100, the TFT 30 as a switching element is turned on for a certain period by the input of the scanning signals SC1 to SCm, so that the image signals D1 to Dn supplied from the data line 6a are supplied to the pixel electrode 27 at a predetermined timing. It is the structure written in. The predetermined level of the image signals D1 to Dn written to the liquid crystal layer 15 through the pixel electrode 27 is held for a certain period between the pixel electrode 27 and the counter electrode 31 disposed to face the liquid crystal layer 15. The

  In order to prevent the held image signals D1 to Dn from leaking, the capacitive element 16 is connected in parallel with the liquid crystal capacitance formed between the pixel electrode 27 and the counter electrode 31. The capacitive element 16 is provided between the pixel electrode side source / drain region of the TFT 30 and the capacitive line 3b. The capacitive element 16 has a dielectric layer between two capacitive electrodes.

  FIG. 4 is a schematic cross-sectional view showing the structure of the liquid crystal device. Hereinafter, the structure of the liquid crystal device will be described with reference to FIG. FIG. 4 shows the cross-sectional positional relationship of each component and is expressed on a scale that can be clearly shown.

  As shown in FIG. 4, the liquid crystal device 100 includes one element substrate 10 out of a pair of substrates and the other counter substrate 20 disposed to face the element substrate 10. As described above, the first base material 10a configuring the element substrate 10 and the second base material 20a configuring the counter substrate 20 are configured by, for example, a quartz substrate or the like.

  A lower light-shielding film 3c made of titanium (Ti), chromium (Cr), or the like is formed on the first base material 10a. The lower light-shielding film 3c is planarly patterned in a lattice shape and defines an opening area of each pixel. The lower light shielding film 3c may function as a part of the scanning line 3a. A base insulating layer 11a made of a silicon oxide film or the like is formed on the first base material 10a and the lower light shielding film 3c.

  On the base insulating layer 11a, the TFT 30, the scanning line 3a, and the like are formed. The TFT 30 has, for example, an LDD (Lightly Doped Drain) structure, and is formed on the semiconductor layer 30a made of polysilicon, the gate insulating film 11g formed on the semiconductor layer 30a, and the gate insulating film 11g. And a gate electrode 30g made of a polysilicon film or the like. As described above, the scanning line 3a also functions as the gate electrode 30g.

  The semiconductor layer 30a is formed as an N-type TFT 30 by implanting N-type impurity ions such as phosphorus (P) ions. Specifically, the semiconductor layer 30a includes a channel region 30c, a data line side LDD region 30s1, a data line side source / drain region 30s, a pixel electrode side LDD region 30d1, and a pixel electrode side source / drain region 30d. ing.

  The channel region 30c is doped with P-type impurity ions such as boron (B) ions. The other regions (30s1, 30s, 30d1, 30d) are doped with N-type impurity ions such as phosphorus (P) ions. Thus, the TFT 30 is formed as an N-type TFT.

  A first interlayer insulating layer 11b made of a silicon oxide film or the like is formed on the gate electrode 30g, the base insulating layer 11a, and the scanning line 3a. A capacitive element 16 is provided on the first interlayer insulating layer 11b. Specifically, the first capacitor electrode 16a as the pixel potential side capacitor electrode electrically connected to the pixel electrode side source / drain region 30d and the pixel electrode 27 of the TFT 30, and the capacitor line 3b (as the fixed potential side capacitor electrode). A part of the second capacitor electrode 16b) is disposed to face the dielectric film 16c, whereby the capacitor element 16 is formed.

  The capacitor line 3b (second capacitor electrode 16b) includes at least one of refractory metals such as Ti (titanium), Cr (chromium), W (tungsten), Ta (tantalum), and Mo (molybdenum). , Metal simple substance, alloy, metal silicide, polysilicide, and a laminate of these. Alternatively, it can be formed from an Al (aluminum) film.

  The first capacitor electrode 16 a is made of, for example, a conductive polysilicon film and functions as a pixel potential side capacitor electrode of the capacitor element 16. However, the first capacitor electrode 16a may be composed of a single layer film or a multilayer film containing a metal or an alloy, like the capacitor line 3b. The first capacitor electrode 16a functions as a pixel potential side capacitor electrode, and in addition to the pixel electrode 27 and the pixel electrode side source / drain region 30d (drain) via the contact hole CNT52, the relay layer 55, and the contact holes CNT53 and CNT51. A region).

  A data line 6a is formed on the capacitive element 16 via the second interlayer insulating layer 11c. The data line 6a is electrically connected to the data line side source / drain region 30s (source region) of the semiconductor layer 30a through the contact hole CNT54 formed in the first interlayer insulating layer 11b and the second interlayer insulating layer 11c. Has been.

  A pixel electrode 27 is formed on the data line 6a via a third interlayer insulating layer 11d. The pixel electrode 27 is connected to the first capacitor electrode 16a via the contact holes CNT52, CNT53, and the relay layer 55 that are opened in the second interlayer insulating layer 11c and the third interlayer insulating layer 11d, whereby the semiconductor layer 30a. The pixel electrode side source / drain region 30d (drain region) is electrically connected. The pixel electrode 27 is formed of a transparent conductive film such as an ITO (Indium Tin Oxide) film.

On the pixel electrode 27 and the third interlayer insulating layer 11d, a first alignment film 28 in which an inorganic material such as silicon oxide (SiO ₂ ) is obliquely deposited is provided via the fourth interlayer insulating layer 11e. On the first alignment film 28, the liquid crystal layer 15 in which liquid crystal or the like is sealed in a space surrounded by the sealing material 14 (see FIG. 2) is provided.

On the other hand, the counter electrode 31 is provided on the entire surface of the second base material 20a. On the counter electrode 31 (on the lower side in FIG. 4), a second alignment film 32 is formed by obliquely depositing an inorganic material such as silicon oxide (SiO ₂ ). The counter electrode 31 is made of a transparent conductive film such as an ITO film, for example, like the pixel electrode 27 described above.

  The liquid crystal layer 15 takes a predetermined alignment state by the first alignment film 28 and the second alignment film 32 in a state where an electric field from the pixel electrode 27 is not applied. The sealing material 14 is an adhesive made of, for example, a photocurable resin or a thermosetting resin, for bonding the element substrate 10 and the counter substrate 20 around them, and a distance between the two substrates is set to a predetermined value. Spacers such as glass fiber or glass beads are mixed.

<Sub-pixel structure>
FIG. 5 is a schematic plan view showing an array of sub-pixels constituting the pixel. 6 and 7 are schematic cross-sectional views taken along the line AA ′ of the pixel shown in FIG. FIG. 8 is a graph showing the spectral transmittance when the film thickness of the pixel electrode in each sub-pixel is changed. Hereinafter, the relationship between the film thickness of the pixel electrode and the film thickness of the counter electrode in the sub-pixel will be described with reference to FIGS.

  As shown in FIG. 5, in the pixel P, for example, a plurality of sub-pixels (41R, 41G, 41B, 41W) are arranged in a matrix. Specifically, the pixel 40 includes a red (R) sub-pixel 41R, a green (G) sub-pixel 41G, a blue (B) sub-pixel 41B, and a white (W) sub-pixel 41W (second sub-pixel). These four sub-pixels. The backlight (not shown) uses a white light source such as a fluorescent lamp or a white light emitting diode (white LED).

  As shown in FIG. 6, the red (R), green (G), and blue (B) sub-pixels (41R, 41G, 41B) in the liquid crystal device 100 are red (R) and green (G ) And blue (B) filter layers (transmission regions), which are arranged so as to correspond to each other.

  Each sub-pixel 41 selectively transmits light in a corresponding wavelength region among white light generated from a white backlight, and absorbs light in other wavelength regions. In addition, the white (W) sub-pixel 41 </ b> W basically has no corresponding absorption filter layer in the color filter 42. That is, the light that passes through the sub-pixel 41 </ b> W is emitted from the liquid crystal device 100 as white light without being absorbed by the color filter 42.

  Note that light transmitted through the three sub-pixels 41R, 41G, and 41B of red (R), green (G), and blue (B) is visually recognized as white light by an observer. Therefore, the white light W1 (first white light) configured by the three sub-pixels 41R, 41G, and 41B and the white light W2 (second white light) displayed by the one sub-pixel 41W cause color unevenness. In order to improve the smoothness of the suppressed image, it is important to have the same white color.

  The color filter 42 includes a red transmissive region 42R, a green transmissive region 42G, a blue transmissive region 42B, a non-colored region 42W, and a light shielding portion (black matrix) surrounding each of the regions 42R, 42G, 42B, and 42W. . The white light (W) transmitted through the sub-pixel 41R is transmitted through the red transmission region 42R, so that the color purity is improved. The white light (W) transmitted through the sub-pixel 41G is transmitted through the green transmission region 42G, so that the color purity is improved. The white light (W) transmitted through the sub-pixel 41B is transmitted through the blue transmission region 42B, so that the color purity is improved.

  These red light (R), green light (G), and blue light (B) are combined to form white light W1. Further, the white light (W) transmitted through the sub-pixel 41W becomes the white light W2 as it is by passing through the colorless and transparent uncolored region 42W.

  The thickness t1 of the pixel electrode 27W (second pixel electrode) of the sub-pixel 41W is, for example, 146 nm. In addition, as a range of the film thickness for transmitting white light, it is a film thickness including the maximum point of the transmittance | permeability in a green visible light wavelength range, and is 140 nm-160 nm.

  The thickness t2 of the pixel electrodes 27R, 27G, and 27B (first pixel electrodes) of the sub-pixels 41R, 41G, and 41B is white with a blue color tone strengthened with reference to the color tone of the white light W2 that has passed through the sub-pixel 41W. The thickness is changed depending on the color tone of the light W2 or the case where the red color tone is increased and adjusted to the color tone of the white light W2.

  For example, as shown in FIG. 6, when increasing the blue color to white, the thickness t2 of the pixel electrodes 27R, 27G, and 27B is adjusted to 127 nm, for example. The range of the thickness t2 of the pixel electrodes 27R, 27G, and 27B is preferably set to the highest transmittance of the blue region of the transparent electrode, for example, 100 nm to less than 140 nm. The thickness of the counter electrode 31 is, for example, 146 nm and is the same for each color.

  Also, as shown in FIG. 7, when red is strengthened to become white, the thickness t3 of the pixel electrodes 27R, 27G, and 27B is adjusted to, for example, 182 nm. The range of the thickness t3 of the pixel electrodes 27R, 27G, and 27B is preferably greater than 160 nm and 200 nm. The thickness of the counter electrode 31 is, for example, 146 nm and is the same for each color.

  The graph shown in FIG. 8 is a graph showing the spectral transmittance in the first embodiment. The horizontal axis indicates the wavelength λ (nm), and the wavelength increases as it goes to the right side in the figure. The vertical axis indicates the transmittance (%), and the transmittance increases toward the upper side in the figure.

  Curves A, B, and C are transparent electrodes of the sub-pixel 41W when the color tone of the sub-pixels 41R, 41G, and 41B is adjusted to white by intensifying blue or red based on the color tone of the white light W2 of the sub-pixel 41W. The transmittance for each wavelength of light when the film thickness of the sub-pixels 41R, 41G, and 41B is reduced or increased with respect to the film thickness is shown.

  Specifically, the film thickness of the counter electrode 31 and the film thickness t1 of the pixel electrode 27W of the sub-pixel 41W are 146 nm as described above. At this time, the wavelength of light and the transmittance gag become curve B.

  In addition, a curve of light wavelength and transmittance when the thickness t2 of the pixel electrodes 27R, 27G, and 27B of the sub-pixels 41R, 41G, and 41B is set to 127 nm is a curve A. Specifically, when the color tone of the white light W1 of the sub-pixels 41R, 41G, and 41B looks yellow with respect to the white light W2 of the sub-pixel 41W, the blue color as shown in the graph is set by setting the film thickness t2. The wavelength of can be increased. In other words, the transmittance in the blue wavelength region can be increased.

  A graph of the wavelength and transmittance of light when the thickness t3 of the pixel electrodes 27R, 27G, and 27B of the sub-pixels 41R, 41G, and 41B is 182 nm is a curve C. For example, when the color tone of the white light W1 of the sub-pixels 41R, 41G, and 41B looks blue with respect to the white light W2 of the sub-pixel 41W, the red wavelength as shown in the graph is set by setting the film thickness t3. Can be strong. In other words, the transmittance in the blue wavelength region can be reduced.

  In this way, by adjusting the film thickness of the pixel electrodes 27R, 27G, and 27B of the sub-pixels 41R, 41G, and 41B based on the color tone of the white light W2 of the sub-pixel 41W, the white color of the sub-pixels 41R, 41G, and 41B is adjusted. The color tone of the light W1 and the color tone of the white light W2 can be brought close to each other. As a result, the color shift of white light can be reduced, and the display quality can be improved.

<Configuration of electronic equipment>
Next, a projection display device as an electronic apparatus according to the present embodiment will be described with reference to FIG. FIG. 9 is a schematic diagram showing a configuration of a projection display device including the above-described liquid crystal device. FIG. 9A is a schematic sectional side view, and FIG. 9B is a schematic sectional view seen from above.

  As shown in FIGS. 9A and 9B, a projection display device 1000 as an electronic apparatus according to this embodiment includes an illumination device 1100, a liquid crystal light valve 1500 as a light modulation unit, and a projection optical system. A projection lens 1601. The liquid crystal light valve 1500 is applied with the liquid crystal device 100 described above. The liquid crystal light valve 1500 modulates the illumination light emitted from the illumination device 1100 based on image information and converts it into display light. The converted display light is emitted from the liquid crystal light valve 1500 and projected onto a screen or the like by the projection lens 1601.

  The illumination device 1100 according to this embodiment includes a second condenser lens 1300, a polarization beam splitter 1400, and a liquid crystal light valve 1500 in addition to the components of the light emitting element 1110, the first condenser lens 1120, and the reflecting member 1105. The first condensing lens 1120, the second condensing lens 1300, and the light shielding box 1150 that houses the polarization beam splitter 1400 are configured so that the light from the light does not enter.

  The LED 1101, the first condenser lens 1120, the second condenser lens 1300, the polarizing beam splitter 1400, the liquid crystal light valve 1500, and the projection lens 1601 as a solid light source in the light emitting element 1110 are disposed on the same optical axis (optical axis). ing.

  The second condenser lens 1300 includes a flat incident surface 1301 having a larger aperture diameter than the incident surface 1120 a of the first condenser lens 1120 and a lens portion 1302 that is convex with respect to the incident surface 1301. In addition, the second condenser lens 1300 has a cut surface 1303 that is not a perfect circle when viewed from the optical axis direction, but is cut at the top and bottom. The cut surface 1303 is in contact with the light shielding box 1150.

  The second condenser lens 1300 is arranged on the optical axis so that the light incident surface 1301 faces the lens portion 1120b of the first condenser lens 1120. In addition, out of the light emitted from the light emitting element 1110 and collected by the first condenser lens 1120, ineffective light that does not enter the incident surface 1301 of the second condenser lens 1300 is converted into the lens portion 1120 b of the first condenser lens 1120. A reflection member 1305 for retroreflecting toward the screen.

  The configuration of the reflecting member 1305 is the same as that of the reflecting member 1105, and has a plurality of retroreflectors on the reflecting surface. The arrangement pitch of the retroreflectors is 5 μm or more and 100 μm or less. As shown in FIG. 9B, the reflecting member 1305 is provided in contact with the left and right outer edges of the second condenser lens 1300 when viewed from the optical axis direction. The reflecting member 1305 does not block the light incident on the incident surface 1301, and at least part of the ineffective light that does not enter the incident surface 1301 between the first condenser lens 1120 and the second condenser lens 1300. The reflection member 1305 may be disposed at a position where the lens part 1120b of the first condenser lens 1120 is retroreflected.

  The polarization beam splitter 1400 converts the light collected by the second condenser lens 1300 into polarized light (S wave). A polarizing beam splitter 1400 is disposed on the light incident side, and a polarizing element 1561 is disposed on the light exit side.

  According to such a projection type display device 1000, since the liquid crystal device 100 in which the color shift of white light is reduced is used as the liquid crystal light valve 1500, high display quality can be realized.

  As described above in detail, according to the liquid crystal device 100 of the first embodiment, the following effects can be obtained.

  (1) According to the liquid crystal device 100 of the first embodiment, the wavelength dispersion is achieved by increasing or decreasing the film thicknesses t2 and t3 of the pixel electrodes 27R, 27G, and 27B with respect to the film thickness t1 of the pixel electrode 27W. Since the white light W2 and the white light W1 are adjusted to have the same color tone, the white light W2 displayed by one subpixel 41W and a plurality of subpixels 41R, 41G, and 41B are configured. The variation in color with the white light W <b> 1 that is generated can be suppressed. Therefore, display quality can be improved, for example, white unevenness is suppressed and an image is smoothed.

  (2) According to the liquid crystal device 100 of the first embodiment, by increasing the film thickness t3 of the pixel electrodes 27R, 27G, and 27B with respect to the film thickness t1 of the pixel electrode 27W, the blue color tone is changed to the red color tone. It becomes possible to change the direction. Further, by reducing the film thickness t2 of the pixel electrodes 27R, 27G, and 27B with respect to the film thickness t1 of the pixel electrode 27W, it is possible to change from the yellow color tone to the blue color tone. Therefore, the white light W1 can be brought close to the white light W2, and color unevenness between the white light W1 and the white light W2 can be suppressed.

  (3) According to the electronic apparatus of the first embodiment, it is possible to provide an electronic apparatus that can suppress color unevenness and improve display quality.

(Second Embodiment)
<Sub-pixel configuration>
10 and 11 are schematic cross-sectional views illustrating the configuration of the pixel (sub-pixel) of the second embodiment. Hereinafter, the configuration of the sub-pixel according to the second embodiment (the relationship between the film thickness of the pixel electrode and the film thickness of the counter electrode) will be described with reference to FIGS. 10 and 11. The planar configuration of the pixel is the same as that shown in FIG. 5, for example.

  The sub-pixels 41R, 41G, and 41B of the second embodiment adjust the color tone of white light by changing the film thickness of the pixel electrodes 27R, 27G, and 27B as in the first embodiment, whereas the counter electrodes The portion where the color tone of white light is adjusted by changing the film thickness on the 31 side is different, and the other configurations are generally the same. Therefore, in the second embodiment, portions different from the first embodiment will be described in detail, and descriptions of other overlapping portions will be omitted as appropriate.

  In the pixel 40 of the second embodiment, a plurality of sub-pixels 41R, 41G, 41B, and 41W are arranged in a matrix as shown in FIG. FIG. 10 shows a structure in which the thickness of the counter electrode is adjusted to increase the blue color to white. FIG. 11 shows a structure in the case of adjusting the film thickness of the counter electrode and adjusting the white color by increasing the red color.

  As shown in FIG. 10, the film thickness t1 of the pixel electrodes 27R, 27G, 27B, and 27W of the sub-pixels 41R, 41G, and 41B and the sub-pixel 41W is, for example, 146 nm. The film thickness range for transmitting white light is 140 nm to 160 nm. Similarly, the thickness of the counter electrode 31W (second counter electrode) of the sub-pixel 41W is 146 nm.

  As shown in FIG. 10, when adjusting the white color by increasing the blue color, the thickness t11 of the counter electrode 31RGB (first counter electrode) is changed to, for example, 127 nm. The range of the thickness t11 of the counter electrode 31RGB is preferably 100 nm to less than 140 nm.

  As shown in FIG. 11, when adjusting the white color by increasing the red color, the thickness t13 of the counter electrode 31RGB is changed to, for example, 182 nm. The range of the thickness t13 of the counter electrode 31RGB is preferably in the range of more than 160 nm and not more than 200 nm.

  In addition, the graph of the spectral transmittance when changing the film thickness on the counter electrode side in this embodiment is the same as the graph shown in FIG.

  As described above, the color tone of the white light W1 of the sub-pixels 41R, 41G, and 41B is adjusted by adjusting the film thickness of the counter electrode 31RGB of the sub-pixels 41R, 41G, and 41B based on the color tone of the white light W2 of the sub-pixel 41W. And the color tone of the white light W2. As a result, the color shift of white light can be reduced, and the display quality can be improved.

  As described above in detail, according to the liquid crystal device 100 of the second embodiment, in addition to the effects (2) and (3) described above, the following effects can be obtained.

  (4) According to the liquid crystal device 100 of the second embodiment, the wavelength dispersion is changed by increasing or decreasing the film thickness t11 of the counter electrode 31RGB with respect to the film thickness t12 of the counter electrode 31W. Since the color tone of the light W2 and the white light W1 is adjusted to be substantially the same, the white light W2 displayed by one sub pixel 41W and the white light W1 including a plurality of sub pixels 41R, 41G, and 41B. And color variation can be suppressed. Therefore, display quality can be improved, for example, white unevenness is suppressed and an image is smoothed.

(Third embodiment)
<Sub-pixel configuration>
12 and 13 are schematic cross-sectional views illustrating the configuration of the pixel (sub-pixel) of the third embodiment. FIG. 14 is a graph showing the spectral transmittance when the film thickness of the pixel electrode and the counter electrode is changed. Hereinafter, the configuration of the sub pixel according to the third embodiment and the relationship between the film thickness of the pixel electrode and the film thickness of the counter electrode will be described with reference to FIGS. The planar configuration of the pixel is the same as that shown in FIG. 5, for example.

  The sub-pixels 41R, 41G, and 41B of the third embodiment adjust the color tone of white light by changing the film thickness of the pixel electrodes 27R, 27G, and 27B as in the first embodiment. The portions where the color tone of white light is adjusted by changing the film thicknesses of both 27R, 27G, 27B and the counter electrode 31RGB are different, and the other configurations are generally the same. Therefore, in the third embodiment, portions different from the first embodiment will be described in detail, and description of other overlapping portions will be omitted as appropriate.

  In the pixel 40 of the third embodiment, a plurality of sub-pixels 41R, 41G, 41B, and 41W are arranged in a matrix as shown in FIG. FIG. 12 shows a structure in the case where the film thickness of the pixel electrodes 27R, 27G, 27B and the counter electrode 31RGB is adjusted to increase the blue color and adjust the white color. FIG. 13 shows a structure in the case where the film thickness of the pixel electrodes 27R, 27G, 27B and the counter electrode 31RGB is adjusted, and the red color is increased to adjust the white color.

  As shown in FIG. 12, the film thicknesses t1 and t12 of the pixel electrode 27W and the counter electrode 31W of the sub-pixel 41W are, for example, 146 nm. In addition, as mentioned above, the range of the film thickness for transmitting white light is 140 nm to 160 nm.

  As shown in FIG. 12, when the color tone of the white light W1 of the sub-pixels 41R, 41G, and 41B is made closer to the white light W2 by enhancing the blue color with reference to the color tone of the white light W2 of the sub-pixel 41W, the sub-pixel 41R , 41G, 41B, the pixel electrodes 27R, 27G, 27B and the counter electrode 31RGB have a film thickness of 127 nm, for example. In addition, as mentioned above, it is preferable that the range of the film thickness when increasing blue is 100 nm or more and less than 140 nm.

  As illustrated in FIG. 13, when the color tone of the white light W1 of the sub-pixels 41R, 41G, and 41B is made closer to the white light W2 by enhancing red, using the color tone of the white light W2 of the sub-pixel 41W as a reference, the sub-pixel 41R , 41G, 41B, the film thicknesses t3, t13 of the pixel electrodes 27R, 27G, 27B and the counter electrode 31RGB are, for example, 182 nm. In addition, as above-mentioned, as the range of the film thickness when making red strong, it is preferable to set it as the range of more than 160 nm and 200 nm or less.

  Moreover, the graph shown in FIG. 14 is a graph which shows the spectral transmittance in 3rd Embodiment. Specifically, as in FIG. 5, the horizontal axis indicates the wavelength λ (nm), and the wavelength increases toward the right side of the figure. The vertical axis indicates the transmittance (%), and the transmittance increases toward the upper side in the figure.

  Curves A, B, and C shown in FIG. 14 are sub-pixels when the color tone of the sub-pixels 41R, 41G, and 41B is adjusted to white by increasing the color tone of blue or red, based on the color tone of the white light W2 of the sub-pixel 41W. The transmittance for each wavelength of light when the transparent electrodes of the sub-pixels 41R, 41G, and 41B are made thinner or thicker than the film thickness of the transparent electrode of 41W is shown.

  Specifically, as shown in FIG. 12, the film thicknesses t1 and t12 of the pixel electrode 27W and the counter electrode 31W of the sub-pixel 41W are 146 nm as described above. At this time, the wavelength of light and the transmittance gag become curve B.

  Further, a graph of the light wavelength and transmittance when the thicknesses t2 and t11 of the pixel electrodes 27R, 27G, and 27B and the counter electrode 31RGB of the sub-pixels 41R, 41G, and 41B are set to 127 nm is a curve A. Specifically, when the color tone of the white light W1 of the sub-pixels 41R, 41G, and 41B looks yellow with respect to the white light W2 of the sub-pixel 41W, as shown in the graph by setting the film thicknesses t2 and t11. Blue wavelength can be strengthened.

  Further, as shown in FIG. 14, the graph of the wavelength and transmittance of light when the pixel electrodes 27R, 27G, and 27B and the thicknesses t3 and t13 of the counter electrode 31 of the sub-pixels 41R, 41G, and 41B are 182 nm is a curve C. It becomes. For example, when the color tone of the white light W1 of the sub-pixels 41R, 41G, and 41B looks blue with respect to the white light W2 of the sub-pixel 41W, by setting the film thicknesses t3 and t13, a red color as shown in the graph is obtained. The wavelength can be increased.

  In this way, by adjusting the film thickness of the pixel electrodes 27R, 27G, and 27B and the counter electrode 31RGB of the sub-pixels 41R, 41G, and 41B based on the color tone of the white light W2 of the sub-pixel 41W, the sub-pixels 41R and 41G are adjusted. , 41B, the color tone of the white light W1 and the color tone of the white light W2 can be brought close to each other. As a result, the color shift of white light can be reduced, and the display quality can be improved.

  As described above in detail, according to the liquid crystal device 100 of the third embodiment, in addition to the effects (2) and (3) described above, the following effects can be obtained.

  (5) According to the liquid crystal device 100 of the third embodiment, the film thicknesses t2 and t3 of the pixel electrodes 27R, 27G, and 27B and the counter electrode 31RGB with respect to the film thickness t1 of the pixel electrode 27W and the film thickness t12 of the counter electrode 31W. By adjusting the wavelength dispersion by increasing or decreasing the film thickness t11, t13, the white light W2 and the white light W1 are adjusted to have substantially the same color tone. It is possible to suppress color variation between the configured white light W2 and the white light W1 including the plurality of sub-pixels 41R, 41G, and 41B. Therefore, display quality can be improved, for example, white unevenness is suppressed and an image is smoothed.

  The aspect of the present invention is not limited to the above-described embodiment, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification. It is included in the range. Moreover, it can also implement with the following forms.

(Modification 1)
As described above, the sub-pixels 41R, 41G, 41B, and 41W are not limited to being arranged in a matrix, and may be, for example, a stripe or other arrangement. The area of each pixel electrode 27R, 27G, 27B, 27W is not limited to be the same, and the area of each pixel electrode 27 may be different. Further, the arrangement of the pixel electrode 27 may be different from the arrangement shown in FIG.

(Modification 2)
As described above, the color filter 42 is not limited to being disposed on the counter substrate 20 side, and may be disposed on the element substrate 10 side, for example.

(Modification 3)
As described above, the liquid crystal device 100 is not limited to the transmission type, and may be applied to a reflection type.

(Modification 4)
As described above, in addition to adjusting the film thickness of the transparent electrodes such as the pixel electrode 27 and the counter electrode 31 to match the color tone of the white light W1 and the white light W2, white light can be obtained by changing the cell thickness, for example. You may make it match | combine the color tone of W1 and white light W2.

(Modification 5)
As described above, when the film thickness of the pixel electrodes 27R, 27G, 27B, 27W and the counter electrodes 31RGB, 31W is adjusted, the cell thickness changes. For example, unevenness is provided on the element substrate 10 side or the counter substrate 20 side so that the cell thickness becomes a constant interval even if the film thickness is adjusted. It may be prevented from occurring.

(Modification 6)
As described above, the liquid crystal device 100 is not limited to being used for the projection display device 1000. For example, a head-up display, a smartphone, a mobile phone, a head-mounted display, an EVF (Electrical View Finder), a mobile computer, a digital camera, It can be used in various electronic devices such as digital video cameras, displays, in-vehicle devices, audio devices, exposure apparatuses and lighting devices.

  3a ... scanning line, 3b ... capacitance line, 3c ... lower light shielding film, 6a ... data line, 10 ... element substrate, 10a ... first substrate, 11a ... underlying insulating layer, 11b ... first interlayer insulating layer, 11c ... 2nd interlayer insulation layer, 11d ... 3rd interlayer insulation layer, 11e ... 4th interlayer insulation layer, 11g ... Gate insulation film, 14 ... Sealing material, 15 ... Liquid crystal layer, 16 ... Capacitance element, 16a ... 1st capacitance electrode, 16b ... second capacitor electrode, 16c ... dielectric film, 18 ... light shielding part, 20 ... counter substrate, 20a ... second substrate, 22 ... data line drive circuit, 24 ... scan line drive circuit, 25 ... inspection circuit, 26 ... vertical conduction part, 27, 27R, 27G, 27B ... pixel electrode as first pixel electrode, 27W ... pixel electrode as first pixel electrode, 28 ... first alignment film, 29 ... wiring, 30 ... TFT, 30a ... Semiconductor layer, 30c... Channel region, 30d. Side source / drain region, 30d1 ... Pixel electrode side LDD region, 30g ... Gate electrode, 30s ... Data line side source / drain region, 30s1 ... Data line side LDD region, 31 ... Counter electrode, 31RGB ... Counter electrode as first counter electrode , 31W ... counter electrode as second counter electrode, 32 ... second alignment film, 33 ... flattening layer, 40 ... pixel, 41, 41R, 41G, 41B ... sub-pixel as first sub-pixel, 41W ... second Sub-pixel as sub-pixel, 42 ... color filter, 42B ... blue transmission region, 42G ... green transmission region, 42R ... red transmission region, 42W ... non-coloration region, CNT 51, 52, 53, 54 ... contact hole, 55 ... relay 61, external connection terminal, 100 ... liquid crystal device, 1000 ... projection display device, 1100 ... lighting device, 1101 ... LED, 11 DESCRIPTION OF SYMBOLS 5 ... Reflective member, 1110 ... Light emitting element, 1120 ... 1st condensing lens, 1120a ... Incident surface, 1120b ... Lens part, 1150 ... Shading box, 1300 ... 2nd condensing lens, 1301 ... Incident surface, 1302 ... Convex Lens part, 1303 ... cut surface, 1305 ... reflecting member, 1400 ... polarizing beam splitter, 1500 ... liquid crystal light valve, 1561 ... polarizing element, 1601 ... projection lens.

Claims (8)

A plurality of first sub-pixels each including a first pixel electrode and a first counter electrode arranged to face each other and emitting red light, green light, and blue light;
A second sub-pixel having a second pixel electrode and a second counter electrode arranged opposite to each other and emitting white light;
A pixel having
The second pixel electrode and the second counter electrode are arranged so that the first white light composed of the plurality of first sub-pixels and the second white light displayed by the second sub-pixel have substantially the same color. An electro-optical device, wherein the thickness of the electrode is different from at least one thickness of the first pixel electrode and the first counter electrode. The electro-optical device according to claim 1,
An electro-optical device, wherein the thickness of at least one of the first pixel electrode and the first counter electrode is increased or decreased with respect to the thickness of the second pixel electrode and the second counter electrode. The electro-optical device according to claim 1 or 2,
An electro-optical device, wherein an interval between the first pixel electrode and the first counter electrode is the same as an interval between the second pixel electrode and the second counter electrode. An electro-optical device according to any one of claims 1 to 3,
When the color tone of the first white light is closer to blue than the second white light, the film thickness of at least one of the first pixel electrode and the first counter electrode is set to the second pixel electrode and An electro-optical device characterized in that it is thicker than the film thickness of the second counter electrode. An electro-optical device according to any one of claims 1 to 3,
When the color tone of the first white light is closer to yellow than the second white light, the film thickness of at least one of the first pixel electrode and the first counter electrode is set to the second pixel electrode and An electro-optical device, wherein the electro-optical device is made thinner than a thickness of the second counter electrode. The electro-optical device according to any one of claims 1 to 5,
2. The electro-optical device according to claim 1, wherein the second pixel electrode and the second counter electrode have a thickness including a maximum point of transmittance in a green visible light wavelength region. The electro-optical device according to any one of claims 1 to 6,
The plurality of first sub-pixels are red, green, and blue,
The electro-optical device, wherein the second sub-pixel is white light.   An electronic apparatus comprising the electro-optical device according to claim 1.

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