JP2013531782A - 複合材料を検査するためのrf反射 - Google Patents
複合材料を検査するためのrf反射 Download PDFInfo
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Abstract
【選択図】なし
Description
2 アンテナ
3 材料
4 センシング要素
10 無線プローブ
30 絶縁材料
40 導電性粒子
100 RFソース
300 セミフレキシブルシート
400 フィールドセンシング装置
Tx 送信機
Rx 受信機
C セル
WL 配線織機
P プローブ
A プローブアレイ
D RF信号ダイオード整流器
H セルハブ
MC マイクロ同軸ケーブル
VFC 電圧周波数変換器
OM 光変調機
SA ワイヤアンテナ
Claims (35)
- 母材及び該母材中に実質的に等間隔で配置される複数の非絶縁粒子を含むことで、少なくとも一次元においてコヒーレントな電気的周期性を有する材料と、
ソースRF信号及び該ソースRF信号が前記非絶縁粒子により反射されることで生成される戻りRF信号を受信するように配置された受信機と
を備え、
少なくとも一つの前記非絶縁粒子の位置の変化は、前記戻りRF信号から前記材料の特性の変化を決定できるように、前記戻りRF信号の変化を引き起こす
ことを特徴とするセンシングシステム。 - 前記母材は非導電性母材であり、前記非絶縁粒子は導電性粒子であることを特徴とする請求項1に記載のセンシングシステム。
- 前記導電性粒子は、炭素粒子、炭素繊維、グラフェン、アルミニウム粒子、銀粒子、銅粒子、金粒子及びカーボンナノチューブのうち少なくとも1つを含むことを特徴とする請求項2に記載のセンシングシステム。
- 前記非絶縁粒子は、半導体粒子であることを特徴とする請求項1に記載のセンシングシステム。
- 前記非絶縁粒子は、金属及び絶縁体を含む複合粒子であることを特徴とする請求項1に記載のセンシングシステム。
- 前記母材は、ポリマーを含む絶縁母材であることを特徴とする請求項1から5のいずれか一項に記載のセンシングシステム。
- 前記絶縁母材は、熱硬化性エポキシ、熱可塑性ポリエステル、ビニルエステル又はナイロンの少なくとも1つを含むことを特徴とする請求項6に記載のセンシングシステム。
- 前記材料は、少なくとも一次元においてコヒーレントで周期的な導電率を有することを特徴とする請求項1から7のいずれか一項に記載のセンシングシステム。
- 前記材料は、少なくとも一次元においてコヒーレントで周期的な誘電率を有することを特徴とする請求項1から8のいずれか一項に記載のセンシングシステム。
- 前記戻りRF信号の変化は、振幅の変化、周波数の変化、位相シフト、又は干渉効果の変化のいずれかであることを特徴とする請求項1から9のいずれか一項に記載のセンシングシステム。
- 前記材料の特性の変化は、粒子破壊、微小亀裂、剥離、汚染、母材衝撃損傷、又は間隙率の変化のいずれかであることを特徴とする請求項1から10のいずれか一項に記載のセンシングシステム。
- 前記受信機は、環境RF信号を受信するように配置されていることを特徴とする請求項1から11のいずれか一項に記載のセンシングシステム。
- 母材及び該母材中に実質的に等間隔で配置される複数の非絶縁粒子を含むことで、少なくとも一次元においてコヒーレントな電気的周期性を有する材料の特性の変化のセンシング方法であって、
ソースRF信号により前記材料を調査する工程と、
前記非絶縁粒子から反射された戻りRF信号を受信する工程と、
少なくとも一つの前記非絶縁粒子の位置の変化により引き起こされる前記戻りRF信号の変化から、前記材料の特性の変化を決定する工程と
を備えることを特徴とするセンシング方法。 - 前記材料を調査する工程は、単一の機械的プローブを使用して前記材料の表面を走査する工程を含むことを特徴とする請求項13に記載のセンシング方法。
- 前記材料を調査する工程は、1D又は2D方向に沿った電気的マルチプルプローブにより前記材料の表面を走査する工程を含むことを特徴とする請求項13に記載のセンシング方法。
- 前記材料を調査する工程は、表面場プロフィールを生成するアンテナのように前記材料を励起する工程を含むことを特徴とする請求項13に記載のセンシング方法。
- 前記材料を調査する工程は、単一の機械的プローブを使用して前記表面場プロフィールを走査する工程を更に含むことを特徴とする請求項16に記載のセンシング方法。
- 前記材料を調査する工程は、電気的マルチプルプローブを使用して前記表面場プロフィールを走査する工程を更に含むことを特徴とする請求項16に記載のセンシング方法。
- 前記プローブは、電子スイッチング又は多重信号チャネルを備えた2Dプローブアレイであることを特徴とする請求項16に記載のセンシング方法。
- フレキシブルプローブシートに前記2Dプローブアレイを配置する工程を更に備えることを特徴とする請求項19に記載のセンシング方法。
- 前記ソースRF信号は変調されていることを特徴とする請求項12から20に記載のセンシング方法。
- 前記材料は、前記コヒーレントな電気的周期性を実現するように半導体物質をドープすることで得られることを特徴とする請求項12から21のいずれか一項に記載のセンシング方法。
- 前記材料は、各セルがアンテナ素子に相当する複数のセルを含むことを特徴とする請求項15から22に記載のセンシング方法。
- 前記複数のセルは、結合され、セルアレイを形成することを特徴とする請求項23に記載のセンシング方法。
- 前記複数のセルは、誘起された変調RF電流により結合されていることを特徴とする請求項24に記載のセンシング方法。
- 前記プローブアレイは、少なくとも1つのハイインピーダンスプローブを含むことを特徴とする請求項17から25に記載のセンシング方法。
- 前記ハイインピーダンスプローブは、複数の金属微量元素を含むことを特徴とする請求項26に記載のセンシング方法。
- 前記ハイインピーダンスプローブは、ダイオード整流器又は電界効果トランジスタのゲートであることを特徴とする請求項26に記載のセンシング方法。
- 前記戻りRF信号は、ホモダイン受信機によって受信されることを特徴とする請求項27又は28に記載のセンシング方法。
- 前記材料を調査する工程は、前記材料内に電磁場モードを導入する工程を含み、前記戻りRF信号を受信する工程は、前記材料の表面エバネセント電磁場を検出する工程を含むことを特徴とする請求項12から29に記載のセンシング方法。
- 前記複数のセルは、無線セルラーネットワークを形成することを特徴とする請求項24から30に記載のセンシング方法。
- 前記材料の特性の変化を決定する工程は、前記複合材料の2D又は3Dイメージング工程を含むことを特徴とする請求項1から31のいずれか一項に記載のセンシング方法又はセンシングシステム。
- 前記材料の特性の変化を決定する工程は、前記材料の異方性導電率を検出する工程を含むことを特徴とする請求項1から32のいずれか一項に記載のセンシング方法又はセンシングシステム。
- 前記材料の特性は、結晶化度であることを特徴とする請求項1から33のいずれか一項に記載のセンシング方法又はセンシングシステム。
- 請求項1から12に記載のセンシングシステムを備えることを特徴とする請求項13から32に記載のセンシング方法。
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PCT/GB2011/050936 WO2011141755A1 (en) | 2010-05-14 | 2011-05-16 | Rf reflection for inspecting composite materials |
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KR20130082086A (ko) | 2013-07-18 |
US20130139596A1 (en) | 2013-06-06 |
US9726618B2 (en) | 2017-08-08 |
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AU2011251732A1 (en) | 2012-12-20 |
BR112012029053A2 (pt) | 2016-08-02 |
RU2540411C2 (ru) | 2015-02-10 |
GB201008139D0 (en) | 2010-06-30 |
JP6018047B2 (ja) | 2016-11-02 |
CA2798819A1 (en) | 2011-11-17 |
CN102933956B (zh) | 2015-06-10 |
SG185480A1 (en) | 2012-12-28 |
EP2569616A1 (en) | 2013-03-20 |
CN102933956A (zh) | 2013-02-13 |
AU2011251732B2 (en) | 2014-09-04 |
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KR101840490B1 (ko) | 2018-03-20 |
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