JP2013530115A - Method for producing a quartz glass crucible having a transparent inner layer made of synthetic quartz glass - Google Patents

Abstract

An object of the present invention is to provide a method for producing a quartz glass crucible having an inner layer made of pure quartz glass, which is transparent and has low bubbles, and has a long durability time. The object is to perform the following steps: (a) providing a quartz glass crucible base with an inner surface; and (b) at least part of the inner surface of the crucible base by vapor deposition. bake generating a SiO ₂ soot layer, and drying the SiO ₂ soot layer porous to reduce the hydroxyl content, the soot layer on an inner layer made of transparent quartz glass in a low hydrogen atmosphere And sinter the soot layer such that the hydroxyl content in the quartz glass of the inner layer is less than 100 ppm by weight.
[Selection] Figure 2

Description

  The present invention relates to a method for producing a quartz glass crucible having a transparent inner layer made of synthetic quartz glass.

  Quartz glass crucibles are used to receive molten semiconductor material, particularly when pulling a single crystal of silicon according to the so-called Czochralski method. The wall of this type of quartz glass crucible is usually formed by an opaque outer layer, which is provided with an inner layer made of transparent quartz glass with as few bubbles as possible.

  The transparent inner layer is in contact with the molten material during the pulling process and is subject to high mechanical, chemical and thermal loads. Bubbles left in the inner layer can grow under the influence of temperature and pressure and eventually rupture. Thereby, debris and contaminants reach the molten material and the yield of single crystals without dislocations is reduced.

  Therefore, in order to reduce the corrosive action of the molten material and to minimize the release of contaminants from the crucible from the crucible wall, the inner layer should be as homogeneous and low-bubble as possible.

  Furthermore, as semiconductor wafers are miniaturized, the demand for the purity of the semiconductor crystal, and hence the demand for the purity of the quartz glass crucible, is constantly increasing.

  From Patent Document 1, a method for producing a quartz glass crucible is known. In this method, in a mold for a vacuum melting material, using a template, a rotationally symmetric crucible-shaped granular layer having a layer thickness of about 12 mm made of quartz sand mechanically consolidated. A granule layer is formed, and subsequently, an inner granule layer made of synthetic quartz glass powder is similarly formed thereon using a template. The particle size of the synthetic quartz glass powder is in the range of 50 to 120 μm. These granular layers are then sintered from the inside to the outside by an arc ignited in the interior space of the mold for the molten material. A transparent inner layer is obtained on an opaque crucible substrate.

Synthetic quartz glass powder is produced, for example, by finely pulverizing a suspension made of SiO ₂ powder produced as a by-product as filter dust in the production of quartz glass. In this case, a suspension is formed from coarse, coarse SiO ₂ soot dust, which is processed into SiO ₂ fine particles by wet pulverization. Further, this is dried and purified by heating in a chlorine-containing atmosphere, and then sintered into dense quartz glass particles.

  When homogenizing and comminuting the suspension, it can come into strong contact with the wall of the instrument or the grinder body, which can result in introducing contaminants into the granule.

The method described in Patent Document 2 avoids this drawback. In order to manufacture a quartz glass crucible having an inner layer made of synthesized quartz glass, a quartz glass crucible base is prepared, and the opening of the base crucible is turned downward to rotate around the rotation axis. A method of generating an inner layer made of quartz glass on the inner surface by vapor deposition has been proposed. For this purpose, an oxyhydrogen gas burner supplied with a gas releasing material containing oxygen, hydrogen and silicon is used, and its combustion flame is directed towards the inner space of the crucible. In the oxyhydrogen gas flame, SiO ₂ particles are generated, which are deposited on the inner surface of the crucible substrate and vitrified directly into the inner layer by the oxyhydrogen gas flame.

In another form of this method according to U.S. Pat. No. 6,057,056, a porous SiO ₂ layer is first deposited on the inner wall of the crucible by a preceding deposition burner, which is followed by a subsequent oxyhydrogen gas burner (H ₂ / O Vitrification by ₂ burners).

German Patent No. 102008030310B3 Japanese Patent Laid-Open No. 11-11956 JP-A-1-239082 International Publication No. 90 / 02103A1

  The inner layer thus produced is composed of high purity synthetic quartz glass. However, this quartz glass has a high hydroxyl group content due to manufacturing conditions, which is accompanied by a phenomenon that the viscosity is relatively lowered. Thus, known crucibles cannot withstand high temperatures during the crystal pulling process for a long time.

  Accordingly, an object of the present invention is to provide a method for producing a quartz glass crucible having an inner layer made of pure quartz glass that is transparent, low-bubble, and has a longer durability time. is there.

This purpose consists of the following steps:
(A) providing a quartz glass crucible base with an inner surface;
(B) producing a porous SiO ₂ soot layer by vapor deposition on at least a portion of the inner surface of the crucible substrate;
(C) drying the porous SiO ₂ soot layer to reduce the hydroxyl content;
(D) Sintering the soot layer into an inner layer made of transparent quartz glass in a low hydrogen atmosphere, and firing the soot layer so that the hydroxyl group content in the inner layer quartz glass is less than 100 ppm by weight. A step to conclude,
This method is implemented according to the present invention.

  The crucible base is a quartz glass crucible which is transparent and has or without an inner layer. At least the outer region of the crucible wall may contain air bubbles and may appear opaque. The base of the crucible has a bottom surface that is coupled to a cylindrical peripheral sidewall through a curved transition region. The bottom surface, the transition region and the side walls define the inner surface of the crucible and the inner space of the crucible.

A porous SiO ₂ soot layer is formed on the inner surface of the crucible substrate by vapor deposition. In this case, in the reaction zone, SiO ₂ particles are formed by hydrolysis or thermal decomposition of the silicon-containing parent compound, which deposits on the inner surface of the crucible substrate, forming a porous SiO ₂ soot layer. . This soot layer covers the entire inner surface or a part thereof, but at least the transition region.

In this case, it is important that the SiO ₂ soot layer has open porosity. This is obtained in the deposition process by keeping the surface temperature of the soot layer at a low temperature so as to avoid direct dense sintering of the deposited SiO ₂ particles. The surface temperature can be adjusted, for example, by the distance from the reaction zone to the surface. An appropriate surface temperature can be determined based on some testing.

  The porosity of the soot layer allows post processing such as drying the layer and adding a dopant. The drying process can be performed before or during sintering of the soot layer. The drying process includes, for example, vacuum treatment of the soot layer (≦ 300 mbar) or treatment with a reactive drying gas, for example a halogen-containing drying gas such as chlorine. Already by drying, the content of hydroxyl groups is clearly reduced and is basically adjusted to less than 150 ppm by weight. Therefore, the drying process results in a relatively high viscosity of the inner quartz glass due to the lowering of the hydroxyl group content, which favorably affects the durability time of the quartz glass crucible.

  When the soot layer is densely sintered in a low hydrogen--ideally hydrogen-free--in an ambient environment under vacuum or in an atmosphere containing helium, the oxygen or oxide reacts with hydrogen. Thus, generation of a new hydroxyl group is prevented, and the hydroxyl group content can be further reduced.

  The inner layer obtained after drying and sintering the porous soot layer is transparent and free of bubbles and contains only a hydroxyl content of less than 100 ppm by weight, and preferably less than 70 ppm by weight. The inner quartz glass exhibits a sufficiently high viscosity and withstands long processing times at high temperatures.

  The material of the inner layer itself is certainly superior in terms of high purity, but at a high temperature, for example, when sintering a porous soot layer or when using a quartz glass crucible as specified, There is a risk that contaminants diffuse from the quartz glass of the substrate and penetrate the relatively thin inner layer to reach the semiconductor melt. Alkali ions, in particular, exhibit high mobility in quartz glass and at the same time become so-called “semiconductor poisons” that have an undesirable effect on the electrical properties of the semiconductor.

  Therefore, in order to further reduce the risk of contamination of the molten silicon material, the step of preparing the crucible substrate according to step (a) of the method comprises depleting quartz glass of the crucible substrate and depletion of alkali ions on the inner surface of the crucible substrate. It is desirable to include high temperature electrolysis that is exposed to an electric field that results in oxidation.

  Such high temperature electrolysis methods for the purification of quartz glass structural parts are known. For example, Patent Document 4 describes a method for purifying a quartz glass crucible by high-temperature electrolysis. In this method, the crucible is heated to a temperature of 1500 ° C., and at that time, the crucible wall is applied with 2 kV. It is implemented by applying a voltage of In this case, the anode is formed by a graphite net mounted in a contactless manner in a quartz glass crucible, and the cathode is formed by an ionized gas produced by a burner flame on the crucible wall. A current of 160 mA is generated, in which positively charged ions, especially alkali ions, move away from the inner surface of the crucible and migrate into the gas phase and are removed in the burner flame.

  High-temperature electrolysis results in depletion of mobile ions, which are particularly mobile, from the inner surface of the crucible substrate, thereby leading to the above-mentioned risks related to contamination of the inner layer during inner layer production, or the quartz glass crucible as specified. The above-mentioned risks related to the molten semiconductor material when used are reduced.

Vitrification wherein the step of preparing a crucible substrate according to step (a) of the method vitrifies a particle layer made of SiO ₂ particles formed on the inner wall surface of the mold for molten material by an arc on the crucible substrate. Including the process, it proved to be particularly good.

  In this case, usually a granular layer is produced on the wall of the rotating molten material mold, which is subsequently heated by an arc (plasma) to provide a crucible having an at least partially opaque wall. Vitrifies the substrate. In order to produce a crucible base, it is possible to use cheap crystal grains made of natural quartz raw materials. In this way, the crucible substrate can be manufactured quickly and inexpensively.

The density of the porous soot layer is desirably in the range of 10 to 35% of the density of the quartz glass, particularly preferably in the range of 15 to 30% of the density of the quartz glass. In this case, it is based on the density of undoped quartz glass of 2.21 g / cm ³ .

  If the soot density is low, vitrification without bubbles in the soot layer becomes difficult. This is true for densities less than 15%, in particular less than 10%. Very high densities, such as higher than 30%, especially higher than 35%, can reduce the effectiveness of subsequent gas phase processing, eg dehydration.

For the production of the SiO ₂ soot layer, known chemical vapor deposition methods are basically suitable as long as a porous soot layer is obtained. The SiO ₂ soot layer according to method step (b) is preferably produced by a deposition burner.

The deposition burner creates a reaction zone in the form of a burner flame or plasma. The flame pressure or plasma pressure can be used to accelerate the SiO ₂ soot particles formed in the reaction zone in the direction of the inner surface of the crucible substrate to be coated.

It has proved advantageous to produce the SiO ₂ soot layer according to method step (b) to a layer thickness of less than 60 mm.

  When the layer thickness is less than 1 mm, it becomes a thin inner layer after sintering, and there is a possibility of rapid wear when using a crucible. In the case of a layer thickness greater than 60 mm, vitrification is difficult, and the heating time becomes longer due to its thermal insulating action.

By sintering the soot layer in a low hydrogen atmosphere, the generation of new hydroxyl groups due to the reaction of oxygen or oxide with hydrogen is avoided. In this regard, it has proved advantageous to carry out the sintering of the SiO ₂ soot layer according to step (d) of the method with a laser beam acting on the soot layer.

  The laser allows for rapid and effective heating of the soot layer to the sintering temperature. In this method, compared to sintering of the soot layer in the furnace, the irradiated energy is exclusively used for heating the soot layer, and for additional heating of the furnace, the crucible base and the surrounding atmosphere. There is an advantage that it is not used.

In this case, it is desirable to sinter the SiO ₂ soot layer having a bottom region and a peripheral sidewall region that is bonded to the bottom region and includes the upper edge as follows. That is, sintering is performed so that the melting front end portion pushed by the spiral or lattice movement of the laser beam from the bottom region toward the side wall region and the upper edge is generated by the action of the laser beam. To do.

  The melting front end, and thus the gas contained and released in the soot layer, is pushed outward from the center of the bottom region to the top edge of the soot layer, where it can flow out without restriction. . Thus, gas confinement and bubble formation are avoided.

As an alternative to this, it has also proved advantageous to carry out the sintering of the SiO ₂ soot layer according to method step (d) by heating in a furnace.

  In the case of this modified method, the crucible substrate is placed in a sintering furnace together with the soot layer, and the soot layer is sintered as a whole therein. The sintering furnace can easily adjust and maintain a pressure different from the atmospheric pressure and a predetermined sintering atmosphere. In this case, the soot layer is also dried in one furnace, preferably in a sintering furnace.

In this regard, it has proved advantageous to carry out the sintering of the SiO ₂ soot layer according to method step (d) under vacuum.

By sintering the soot layer under vacuum, air bubble confinement in the inner layer is avoided, which contributes to a lower content of hydroxyl groups in the SiO ₂ soot layer. Therefore, by this method, a hydroxyl group is reduced and a particularly low-bubble inner layer is obtained. In this case, “vacuum” is understood as a low pressure having an absolute pressure of less than 300 mbar.

An alternative and equally preferred method is to perform the sintering of the SiO ₂ soot layer in step (d) of the method in a helium-containing atmosphere.

  Helium is characterized by a high diffusion rate in quartz glass. Thus, there is no helium-filled bubble in the soot layer sintering, or it can dissolve during the sintering process. In this way, in particular, a particularly low-bubble inner layer is realized.

  Usually, the inner surface of the quartz glass crucible must be cleaned before shipping. For this reason, an etching method is often used. However, in the method according to the present invention, a high surface quality is obtained from the beginning, and no etching process is required at all, or only an etching process with low strength is required. Preferably, a layer thickness of less than 0.5 mm is removed by etching from the inner layer after sintering according to step (d) of the method.

  Hereinafter, the present invention will be described in detail based on exemplary embodiments and drawings. Each drawing is schematically represented.

It is sectional explanatory drawing which shows an example of the melting apparatus used in the method of this invention for manufacturing a crucible base | substrate. FIG. 2 shows deposition of a soot layer on the inner surface of the crucible substrate shown in FIG.

  The melting apparatus of FIG. 1 includes a mold 1 for a molten metal made of metal having an inner diameter of 75 cm, and is mounted on a support 3 with an outer flange. The support 3 can rotate around the central axis 4. A graphite cathode 5 and an anode 6 (electrodes 5; 6) protrude into the internal space 10 of the mold 1 for molten material, and both electrodes 5 and 6 are indicated by arrows 7 in the negative direction. In the interior of the mold 1 for the molten material, it can move in any spatial direction.

  The open upper side of the mold 1 for molten material is partly covered by a heat shielding member 11 in the form of a water-cooled metal plate with a central through bore. The electrodes 5, 6 project through this central through-hole into the mold 1 for the molten material. The heat shielding member 11 is connected to the gas inlet 9 for helium. The heat shielding member 11 can move in the horizontal direction (x and y directions) as indicated by the directional arrow 14 in the upper plane of the mold 1 for molten material.

  The space between the support 3 and the mold 1 for molten material can be depressurized by a vacuum device. This is represented by a directional arrow 17. The mold 1 for molten material has a number of through-passage holes 8 (this is represented only schematically in the bottom region in FIG. 1), through which it is formed outside the mold 1. The vacuum 17 can enter the inside.

  Hereinafter, the production of a crucible base for a 28-inch quartz glass crucible will be described in detail based on an embodiment.

  A crystal grain having a particle size in the range of 90 μm to 315 μm made of natural quartz sand cleaned by high-temperature chlorination is filled into a mold 1 for molten material that rotates about its longitudinal axis 4. A rotationally symmetric crucible-shaped granular layer 12 made of quartz sand mechanically consolidated is formed on the inner wall surface of the mold 1 for molten material under the action of centrifugal force and using a template. The average layer thickness of the granular layer 12 is about 15 mm.

In order to vitrify the SiO ₂ particle layer 12, the heat shielding member 11 is set above the opening of the mold 1 for molten material. The electrodes 5; 6 are inserted into the internal space 10 from the central opening of the heat shielding member 11, and an arc is ignited between the electrodes 5; This is indicated in FIG. 1 by the plasma zone 13 as a region represented in gray. At the same time, a vacuum is applied to the outside of the mold 1 for the molten material.

  When the electrodes 5 and 6 are moved together with the heat shielding member 11 to the side position shown in FIG. 1 and a power of 600 kW (300 V, 2000 A) is applied, the granular layer 12 in the side wall region is made of glass. It becomes. In order to vitrify the granular layer 12 in the bottom region, the heat shielding member 11 and the electrodes 5; 6 are moved to the center position, and the electrodes 5; 6 are sunk downward.

  In the sintering of the layers, first a dense inner skin is produced. Thereafter, the applied low pressure (vacuum) can be increased and the vacuum can exert its full function. The melting process is terminated before the melting front end reaches the inner wall surface of the mold 1 for the molten material.

  After cooling, the crucible base obtained as described above is removed from the molten material mold 1 and the outside thereof is polished and removed. The crucible wall has a uniform thickness of about 10 mm and is almost totally opaque.

  The crucible substrate is subjected to high temperature electrolysis based on the method described in US Pat. For this purpose, it is heated to a temperature of 1500 ° C., and at the same time, a voltage is generated so that a current of 160 mA is generated on the crucible wall. This method induces the movement of positively charged ions away from the inner surface of the crucible, and in particular, depletion of easily movable alkali ions on the inner surface of the crucible base is achieved. On the outer surface of the crucible, alkali ions are transferred to the gas phase and removed by the action of the high-temperature ionic gas.

Subsequently, a SiO ₂ soot layer 21 is deposited on the inner surface of the precleaned crucible substrate 20. This deposition process is schematically represented in FIG.

  The crucible base 20 is mounted in a holding frame 22 that can rotate around a rotation shaft 23. In this embodiment, the rotation shaft 23 is inclined at an angle of 30 ° with respect to the vertical line.

A soot layer 21 is produced on the inner surface of the rotating crucible substrate 20 using a conventional flame hydrolysis burner 24 supplied with oxygen and hydrogen as combustion gases and SiCl ₄ as a silicon-containing parent material.

  For this purpose, the deposition burner 24 is allowed to move in any spatial direction as indicated by the directional arrow 25.

By this method, an SiO ₂ soot layer 21 having an equal thickness of 25% of the density of quartz glass is generated on the inner surface of the crucible base 20. The surface temperature of the region where the soot layer is formed is 1250 ° C. at the maximum. The soot layer thus produced has a hydroxyl group content of about 150 ppm by weight.

  Subsequently, the crucible substrate 20 is loaded into a vacuum furnace with a porous soot layer 21 in which it is dried and vitrified in a two-stage process. In order to dry the soot layer 21, the vacuum furnace is heated to a temperature of 750 ° C. at atmospheric pressure, with the drying gas being flushed. The drying gas consists of a mixture of chlorine and nitrogen with a chlorine fraction of 5% by volume. After a treatment time of 2 h, the vacuum furnace is depressurized to an absolute pressure of <300 mbar and heated to a temperature of 1400 ° C. At this temperature, the soot layer 21 is sintered into a transparent and high-purity inner layer without bubbles. Subsequently, a layer thickness of about 0.1 mm is removed from the sintered layer by etching in hydrofluoric acid.

  The inner layer of the quartz glass crucible thus produced has an average thickness of 3 mm. It is smooth and low-bubble and is firmly bonded to the crucible substrate 20. The average hydroxyl group content of the inner quartz glass is about 60 ppm by weight.

In an alternative vitrification method, the crucible substrate 20 is dried with a porous soot layer 21 in a vacuum furnace (as described above) and then a CO ₂ laser (TLF3000 Turbo type) with a beam power of up to 3 kW at the focal point. ) To vitrify. This laser device is equipped with a beam guidance system that enables robot-controlled beam guidance in any spatial direction. The main beam of this laser is expanded by an expansion optical system, and as a result, a hot spot having a diameter of 30 mm is generated on the soot layer 21. The laser beam is guided to the upper edge 26 (see FIG. 2) over the entire surface of the soot layer 21 while moving in a spiral shape starting from the bottom surface region at the center of the crucible base 20. During this time, the soot layer 21 is continuously vitrified. At that time, the laser beam pushes forward the melting front end and the gas in the soot layer 21 which can escape from the soot layer 21 at the upper edge 26 at the latest. Subsequently, a layer thickness of about 0.1 mm is removed from the sintered layer by etching in hydrofluoric acid.

  The inner layer of the quartz glass crucible thus produced has an average thickness of 3 mm. It is smooth and low-bubble and is firmly bonded to the crucible substrate 20. The average hydroxyl group content of the inner quartz glass is about 90 ppm by weight.

Claims (10)

A method for producing a quartz glass crucible having a transparent inner layer made of synthetic quartz glass, comprising the following steps:
(A) providing a quartz glass crucible base (20) having an inner surface;
(B) producing a porous SiO ₂ soot layer (21) on at least a part of the inner surface of the crucible substrate (20) by vapor deposition;
(C) drying the porous SiO ₂ soot layer (21) to reduce the hydroxyl group content;
(D) Sintering the soot layer (21) into an inner layer made of transparent quartz glass in a low hydrogen atmosphere so that the hydroxyl group content in the inner layer quartz glass is less than 100 ppm by weight. Sintering the soot layer (21);
Including methods.   Preparing the crucible substrate (20) according to method step (a) comprises subjecting the quartz glass of the crucible substrate (20) to an electric field that results in an electric field that results in depletion of alkali ions on the inner surface. The method of claim 1, comprising: The step of preparing the crucible substrate (20) according to the step (a) of the method comprises the step of preparing the crucible layer (12) made of SiO ₂ particles formed on the inner wall surface of the mold (1) for the molten material. 3. A method according to claim 1 or 2, characterized in that it comprises a vitrification process in which it is vitrified by means of an arc (13) against the substrate. Said porous SiO ₂ soot layer (21) according to method step (b) has a density in the range of 10 to 35% of the density of the quartz glass, preferably a density in the range of 15 to 30% of the density of the quartz glass. 4. The method according to any one of claims 1 to 3, wherein the method is generated. The SiO ₂ soot layer according to step (b) of the method (21) is generated so as to have a layer thickness of less than 60 mm, the method according to claim 1, characterized in that. Sintering of the SiO ₂ soot layer (21) according to method step (d) is carried out using a laser beam acting on the soot layer (21). The method according to one item. The SiO ₂ soot layer (21) has a bottom surface region and a peripheral side wall region which is coupled to the bottom surface region and includes an upper edge portion. In this case, the melting front end portion is caused by the action of the laser beam. The generated melting front end is pushed by the spiral movement of the laser beam from the bottom surface region to the side wall region and the upper edge portion. 6. The method according to 6. The method according to claim 1, characterized in that the sintering of the SiO ₂ soot layer (21) according to method step (d) is carried out by heating in a furnace.   The method according to any one of claims 1 to 8, wherein a hydroxyl group content in the inner layer quartz glass is adjusted to less than 70 ppm by weight.   10. A method according to any one of the preceding claims, characterized in that a layer thickness of less than 0.5 mm is removed by etching from the sintered inner layer according to step (d) of the method.

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