JP2013513228A5 - - Google Patents

Claims (12)

In a method of classifying a radiation-emitting optoelectronic semiconductor device (20),
Providing a radiation-emitting optoelectronic semiconductor device (20);
Determining chromaticity coordinates (8) of light emitted in operation from the radiation-emitting optoelectronic semiconductor device (20);
Classifying the radiation-emitting optoelectronic semiconductor element (20) into a predetermined chromaticity coordinate region (6) including the determined chromaticity coordinates;
However, the predetermined chromaticity coordinate region (6) is selected from a group (7) consisting of a plurality of chromaticity coordinate regions, and a plurality of selected chromaticity coordinate regions (6) are selected from the group consisting of the plurality of chromaticity coordinate regions. at least one chromaticity coordinate region of the chromaticity coordinates region including blue chromaticity coordinates, and / or, viewed including the chromaticity coordinates that can not be associated with the correlated color temperature,
Whether at least one chromaticity coordinate region of the plurality of chromaticity coordinate regions selected from the group (7) including the plurality of chromaticity coordinate regions is delimited by an extended Planck curve (12). Or the extended plank curve (12) is tangent to the extended plank curve (12), followed by the plank curve (11) at the high temperature end point (Tu) of the plank curve (11). Forming a complex curve (1) with the Planck curve (11), and the expanded Planck curve (12) is at a high temperature endpoint (Tu) of the Planck curve (11), It characterized that you are followed at least once continuously differentiable in the Planck curve (11), the classification method of the radiation-emitting optoelectronic semiconductor device (20). The method of claim 1 , wherein the extended Planck curve (12) is at least a quadratic spline in the CIEu'v 'color space. The method of claim 2 , wherein the extended Planck curve (12) is a quadratic Bezier spline in the CIEu'v 'color space. The method according to claim 2 or 3 , wherein the point (Tu) for constructing the spline is a high temperature end point of the Planck curve (11). The point (P) for constituting the spline is a point on a tangent line (14) to the Planck curve (12) at the high temperature end point (Tu), according to any one of claims 2 to 4. The method described. The method according to any one of claims 2 to 5 , wherein the points (S) for constructing the spline are located on a spectral trajectory (2). One address is associated with each chromaticity coordinate area selected from the group (7) consisting of the plurality of chromaticity coordinate areas,
The address has a first parameter (p) representing a distance from the high temperature end point (Tu) of the Planck curve (12) to a chromaticity coordinate region along a complex curve (1). And
The address has a second parameter (j) that represents the distance from the complex curve (1) along the jud line (4) to the chromaticity coordinate region ;
The size of each chromaticity coordinate area selected from the group (7) consisting of the plurality of chromaticity coordinate areas is selected so that the observer does not recognize a difference regarding colors derived from the same chromaticity coordinate area. a method according to any one of claims 1 to 6. The size of each chromaticity coordinate region selected from the group (7) comprising a plurality of chromaticity coordinate area corresponds to the size of the maximum in three steps Mak Adam ellipse, any one of claims 1 to 7 The method according to one item. The size of each chromaticity coordinate region selected from the group (7) consisting of the plurality of chromaticity coordinate regions is substantially the same as or the same as the size of the one-step MacAdam ellipse (5). Item 9. The method according to any one of Items 1 to 8 . The size (p) of each chromaticity coordinate region selected from the group (7) of the plurality of chromaticity coordinate regions measured along a complex curve is at least 0 in the CIEu'v 'color space. .001 is a maximum at 0.005 and a method according to any one of claims 1 to 9. The size (j) of each chromaticity coordinate region selected from the group (7) consisting of the plurality of chromaticity coordinate regions measured along the jud line (4) is expressed in the CIEu'v 'color space. 0.005 at least 0.001 and up method according to any one of claims 1 to 10. Measurements relating to the predetermined chromaticity coordinate area (6) are stored in a memory unit (21), which is on a module support (22) for the radiation-emitting optoelectronic semiconductor element (20). It is fixed to, and the module support (22) are electrically connected, the method according to any one of claims 1 to 11.