TWI497625B - Method for displaying susceptor mapping images of light emitting diode wafers - Google Patents
Method for displaying susceptor mapping images of light emitting diode wafers Download PDFInfo
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本發明是關於一種發光二極體磊晶片之對應磊晶載盤位置量測分佈圖像的呈現方法。The invention relates to a method for presenting a corresponding epitaxial carrier position measurement distribution image of a light-emitting diode epitaxial wafer.
在發光二極體的製造期間，一般會將多個磊晶片配置在磊晶載盤(susceptor)上，然後再將此磊晶載盤置入一沉積系統(例如有機金屬化學氣相沉積(MOCVD，metal-organic chemical vapor deposition)系統)中進行沉積處理，以製造發光二極體磊晶片。在進行沉積處理之後，經常需要對各批發光二極體磊晶片進行量測，以瞭解各批發光二極體磊晶片的物性是否落在規範之內。然而，發光二極體磊晶片一般是以單片方式進行量測，在量測結束之後再將單片發光二極體磊晶片的物性數據一一輸入到電腦中並繪製成數據圖表(例如物性曲線圖)，然後再將這些無法顯示出發光二極體磊晶片之批與批間之關係的數據圖表逐一比對，以期找出各批發光二極體磊晶片間的製造條件變異。此種數據整合與數據圖表比對的方式乃極為耗時與耗力，並且不易觀察出單批磊晶片的物性在沉積腔體內的分佈情形，以及隨腔體使用時間而變異的狀態與趨勢。因此，亟需一種可讓使用者便於觀察各批發光二極體磊晶片間之物性差異以及製造條件變異的方法。During the manufacture of the light-emitting diode, a plurality of epi-wafers are generally disposed on an epitaxial susceptor, and then the epitaxial carrier is placed in a deposition system (eg, organometallic chemical vapor deposition (MOCVD). A deposition process is performed in a metal-organic chemical vapor deposition system to fabricate a light-emitting diode epitaxial wafer. After the deposition process, it is often necessary to measure the wholesale photodiode epitaxial wafers to see if the physical properties of the wholesale photodiode epitaxial wafers fall within the specification. However, the LED epitaxial wafer is generally measured in a single chip manner, and after the measurement is completed, the physical property data of the single-chip LED epitaxial wafer is input into the computer and drawn into a data chart (for example, physical properties). The graphs are then compared one by one with the data charts showing the relationship between the batch and the batch of the LEDs, in order to find the variation of the manufacturing conditions between the wholesale photodiodes. This method of data integration and data chart comparison is extremely time consuming and labor intensive, and it is difficult to observe the distribution of the physical properties of a single batch of epitaxial wafers in the deposition chamber, and the state and trend of variation with the use time of the cavity. Therefore, there is a need for a method that allows the user to easily observe the difference in physical properties between the wholesale photodiode and the variations in manufacturing conditions.
為解決上述問題，依照本發明之一實施例，提供一種發光二極體磊晶片之對應磊晶載盤位置量測分佈圖像的呈現方法，其包含下列步驟：對多批發光二極體磊晶片上的多個量測位置進行量測，以獲得每一量測位置的量測資料，其中每一磊晶片具有對應於一相關磊晶載盤上之一配置位置的第一序列，以及每一量測位置具有對應於一相關磊晶片上之一地址的第二序列；依照該第一序列以及該第二序列，藉由顏色標度方式以各批發光二極體磊晶片的量測資料來建立對應磊晶載盤位置量測分佈圖像；以及在一顯示介面上以重疊方式依序顯示各批發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像。該方法可更包含下列步驟：在該顯示介面上同時顯示各批發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像。In order to solve the above problems, according to an embodiment of the present invention, a method for presenting a corresponding epitaxial carrier position measurement distribution image of a light-emitting diode epitaxial wafer is provided, which comprises the following steps: a multi-wholesale optical diode epitaxial wafer Measuring the plurality of measurement locations to obtain measurement data for each measurement location, wherein each of the epi-wafers has a first sequence corresponding to a configuration location on an associated epitaxial carrier, and each The measurement location has a second sequence corresponding to an address on an associated epitaxial wafer; and the first sequence and the second sequence are used to establish a measurement data of each wholesale photodiode by using a color scale method Corresponding to the epitaxial carrier position measurement distribution image; and sequentially displaying the corresponding epitaxial carrier position measurement distribution images of the wholesale photodiode epitaxial wafers in an overlapping manner on a display interface. The method may further comprise the step of simultaneously displaying a corresponding epitaxial carrier position measurement distribution image of each wholesale photodiode epitaxial wafer on the display interface.
本發明之其他實施樣態以及優點可從以下與用以例示本發明原理範例之隨附圖式相結合的詳細說明而更顯明白。此外，為了不對本發明造成不必要的混淆，在本說明書中將不再贅述為人所熟知的元件與原理。Other embodiments and advantages of the present invention will become more apparent from the detailed description of the accompanying drawings. In addition, elements and principles that are well known will not be described in the present specification in order to avoid obscuring the present invention.
依照本發明之一實施例，圖1顯示發光二極體磊晶片之對應磊晶載盤位置量測分佈圖像之呈現方法的流程圖100。流程圖100是起始於步驟101，於其中對多批發光二極體磊晶片上的多個量測位置進行量測，以獲得每一量測位置的量測資料，其中每一磊晶片具有對應於一相關磊晶載盤上之一配置位置的第一序列，以及每一量測位置具有對應於一相關磊晶片上之一地址的第二序列。第一序列可包含量測時間序列，而第二序列亦可包含量測時間序列。此量測資料可包含但不限於例如薄膜厚度、發光波長、發光強度、反射率等等之相關物性的量測資料。1 is a flow chart 100 showing a method of presenting a corresponding epitaxial carrier position measurement distribution image of a light emitting diode epitaxial wafer in accordance with an embodiment of the present invention. Flowchart 100 begins at step 101 in which a plurality of measurement locations on a multi-popular photodiode epitaxial wafer are measured to obtain measurement data for each measurement location, wherein each epitaxial wafer has a corresponding A first sequence of configuration locations on a associated epitaxial carrier, and each measurement location having a second sequence corresponding to an address on an associated epitaxial wafer. The first sequence can include a measurement time series, and the second sequence can also include a measurement time series. The measurement data may include, but is not limited to, measurement data such as film thickness, luminescence wavelength, luminescence intensity, reflectance, and the like.
在步驟103中，依照該第一序列以及該第二序列，藉由顏色標度方式以各批發光二極體磊晶片的量測資料來建立對應磊晶載盤位置量測分佈圖像。例如，所謂「顏色標度(color scale)」是指利用不同的顏色來表示不同的物性數值範圍。由於人類對顏色比對數字或線條更具有強烈的視覺反應，因此吾人可利用此種顏色標度來建立對應磊晶載盤位置量測分佈圖像，如此俾能讓使用者更便於觀察在各發光二極體磊晶片上的物性分佈差異。In step 103, according to the first sequence and the second sequence, the corresponding epitaxial carrier position measurement distribution image is established by using the color scale method to measure the data of each wholesale photodiode. For example, the term "color scale" refers to the use of different colors to represent different ranges of physical property values. Since humans have a strong visual response to color versus numbers or lines, we can use this color scale to create a corresponding distribution map of the position of the epitaxial carrier, so that the user can more easily observe each The difference in physical property distribution on the LED of the light-emitting diode.
在步驟105中，在一顯示介面上以重疊方式依序顯示各批發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像。以此種重疊依序顯示的方式，吾人可更清楚地觀察到發光二極體磊晶片之批與批之間的製造條件變異。此外，此方法可更包含下列步驟：在此顯示介面上同時顯示各批發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像。In step 105, the corresponding epitaxial carrier position measurement distribution images of the wholesale photodiode epitaxial wafers are sequentially displayed in an overlapping manner on a display interface. In this way of overlapping display, we can more clearly observe the variation of manufacturing conditions between the batch and the batch of the LED epitaxial wafer. In addition, the method may further include the following steps: simultaneously displaying the corresponding epitaxial carrier position measurement distribution image of each wholesale photodiode epitaxial wafer on the display interface.
依照本發明之一更為具體之實施例，圖2顯示發光二極體磊晶片之對應磊晶載盤位置量測分佈圖像之呈現方法的流程圖200。圖2是將本發明之對應磊晶載盤位置量測分佈圖像的呈現方法應用在發光二極體磊晶片之光激發光物性量測的一具體範例。流程圖200是起始於步驟201，於其中對多批發光二極體磊晶片上的多個量測位置進行光激發光(photoluminescence)量測，以獲得每一量測位置的光激發光量測資料，其中每一磊晶片具有對應於一相關磊晶載盤上之一配置位置的第一序列，以及每一量測位置具有對應於一相關磊晶片上之一地址的第二序列。第一序列可包含量測時間序列，而第二序列亦可包含量測時間序列。In accordance with a more specific embodiment of the present invention, FIG. 2 is a flow chart 200 showing a method of presenting a corresponding epitaxial carrier position measurement distribution image of a light emitting diode epitaxial wafer. 2 is a specific example of applying the method for presenting the corresponding epitaxial carrier position measurement distribution image of the present invention to the measurement of the photoexcited light property of the light-emitting diode epitaxial wafer. Flowchart 200 begins at step 201 in which photoluminescence measurements are performed on a plurality of measurement locations on a multi-popular photodiode epitaxial wafer to obtain photoexcitation measurements at each measurement location. The data, wherein each of the epitaxial wafers has a first sequence corresponding to a configuration location on an associated epitaxial carrier, and each of the measurement locations has a second sequence corresponding to an address on an associated epitaxial wafer. The first sequence can include a measurement time series, and the second sequence can also include a measurement time series.
在步驟203中，依照該第一序列以及該第二序列，藉由顏色標度方式以各批發光二極體磊晶片的光激發光量測資料來建立對應磊晶載盤位置量測分佈圖像。In step 203, according to the first sequence and the second sequence, the optical excitation light measurement data of each wholesale optical diode epitaxial wafer is determined by a color scaling method to establish a corresponding epitaxial carrier position measurement distribution image. .
在步驟205中，在一顯示介面上以重疊方式依序顯示各批發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像。此外，此方法可更包含下列步驟：在此顯示介面上同時顯示各批發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像。In step 205, the corresponding epitaxial carrier position measurement distribution images of the wholesale photodiode epitaxial wafers are sequentially displayed in an overlapping manner on a display interface. In addition, the method may further include the following steps: simultaneously displaying the corresponding epitaxial carrier position measurement distribution image of each wholesale photodiode epitaxial wafer on the display interface.
依照本發明之一範例，圖3顯示依照本發明之發光二極體磊晶片之對應磊晶載盤位置量測分佈圖像之呈現方法的示意圖。如圖3所示，在顯示介面1上同時顯示各批發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像，舉例來說，其中，參考符號「3」是指在第一週所生產之發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像、「5」是指在第二週所生產之發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像、「7」是指在第三週所生產之發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像、「9」是指在第四週所生產之發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像、「11」是指在第五週所生產之發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像、以及「13」是指在第六週所生產之發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像。In accordance with an embodiment of the present invention, FIG. 3 is a schematic diagram showing a method of presenting a corresponding epitaxial carrier position measurement distribution image of a light emitting diode epitaxial wafer in accordance with the present invention. As shown in FIG. 3, the corresponding epitaxial carrier position measurement distribution image of each wholesale photodiode epitaxial wafer is simultaneously displayed on the display interface 1. For example, the reference symbol "3" refers to the first week. The corresponding epitaxial carrier position measurement distribution image of the produced LED epitaxial wafer, "5" refers to the corresponding epitaxial carrier position measurement distribution of the LED epitaxial wafer produced in the second week. The image, "7" refers to the corresponding epitaxial carrier position measurement distribution image of the light-emitting diode epitaxial wafer produced in the third week, and "9" refers to the light-emitting diode produced in the fourth week. The corresponding epitaxial carrier position measurement distribution image of the epitaxial wafer, "11" refers to the corresponding epitaxial carrier position measurement distribution image of the light-emitting diode epitaxial wafer produced in the fifth week, and "13" Refers to the corresponding epitaxial carrier position measurement distribution image of the LED epitaxial wafer produced in the sixth week.
以圖3中的對應磊晶載盤位置量測分佈圖像3為例，對應磊晶載盤位置量測分佈圖像3可呈現出各磊晶片在實際磊晶載盤上的配置位置圖像、以及各量測位置在各實際磊晶片上的物性分佈圖像。例如，對應磊晶載盤位置量測分佈圖像3可呈現出19個發光二極體磊晶片配置在實際磊晶載盤上的位置圖像(如圖所示，即標示1號到19號的圓形圖案)，亦即，可呈現出裝載有19個磊晶片的磊晶載盤圖像31，此是藉由下列方式達成：對每一磊晶片賦予對應於實際磊晶載盤上之配置位置的第一序列，如此即可在建立對應磊晶載盤位置量測分佈圖像3時，依據第一序列定位出每一磊晶片在磊晶載盤圖像31上的位置。再者，對應磊晶載盤位置量測分佈圖像3可呈現出在實際磊晶載盤上所配置之19個發光二極體磊晶片的物性分佈圖像，以對應磊晶載盤位置量測分佈圖像3中的第15號磊晶片圖像為例，此是藉由下列方式達成：對第15號實際磊晶片上的每一量測位置賦予對應於在第15號實際磊晶片上之一相關地址的第二序列，如此即可在量測物性數據之後，依據第二序列並藉由顏色標度方式以量測到的數據在磊晶載盤圖像31的第15號磊晶片圖像上建立物性分佈圖像。Taking the corresponding epitaxial carrier position measurement distribution image 3 in FIG. 3 as an example, the corresponding epitaxial carrier position measurement distribution image 3 can present an arrangement position image of each epitaxial wafer on the actual epitaxial carrier. And a physical property distribution image of each measurement position on each actual epitaxial wafer. For example, the corresponding epitaxial carrier position measurement distribution image 3 can present a position image of 19 LED epitaxial wafers disposed on the actual epitaxial carrier (as shown, the numbers 1 to 19 are indicated). The circular pattern), that is, the epitaxial carrier image 31 loaded with 19 epi-wafers, can be achieved by assigning each of the epi-wafers to the actual epitaxial carrier. The first sequence of locations is configured such that when the corresponding epitaxial carrier position measurement distribution image 3 is established, the position of each epitaxial wafer on the epitaxial carrier image 31 is located according to the first sequence. Furthermore, the corresponding epitaxial carrier position measurement distribution image 3 can present a physical distribution image of the 19 LED epitaxial wafers disposed on the actual epitaxial carrier to correspond to the position of the epitaxial carrier. The 15th epitaxial wafer image in the distribution image 3 is taken as an example, which is achieved by assigning each measurement position on the 15th actual epitaxial wafer to the actual epitaxial wafer on the 15th. a second sequence of associated addresses, such that after measuring the physical property data, according to the second sequence and measuring the data by the color scaling method, the 15th epitaxial wafer of the epitaxial carrier image 31 A physical distribution image is created on the image.
在本發明之另一實施例中，第一序列及/或第二序列可包含量測時間序列。以磊晶載盤圖像31為例，在依序量測第1號到第19號實際磊晶片時，即可對第1號到第19號實際磊晶片產生不同的量測時間序列；以磊晶載盤圖像31上的第15號磊晶片圖像為例，在依序量測第15號實際磊晶片上的各個位置時，即可對第15號實際磊晶片上的各個位置產生不同的量測時間序列。In another embodiment of the invention, the first sequence and/or the second sequence may comprise a measurement time series. Taking the epitaxial carrier image 31 as an example, when the actual epitaxial wafers No. 1 to No. 19 are sequentially measured, different measurement time series can be generated for the actual epitaxial wafers No. 1 to No. 19; For example, the No. 15 epitaxial wafer image on the epitaxial carrier image 31 can be used to sequentially measure the positions on the 15th actual epitaxial wafer. Different measurement time series.
依照本發明之另一範例，圖4A-4F顯示依照本發明之發光二極體磊晶片之對應磊晶載盤位置量測分佈圖像之呈現方法的連續示意圖。如圖4A-4F所示，在顯示介面1上以重疊方式依序顯示各批發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像。雖然圖4A-4F是顯示分開的圖像，但實際上圖4A-4F的圖像是以重疊方式連續顯示，以利使用者觀察發光二極體磊晶片之批與批之間的製造條件變異。此種重疊且依序顯示圖像的方式可讓使用者「追蹤(tracking)」多批產品的物性變異，俾能讓使用者判定是否需要修改製程條件。In accordance with another example of the present invention, FIGS. 4A-4F are sequential diagrams showing a method of presenting a corresponding epitaxial carrier position measurement distribution image of a light emitting diode epitaxial wafer in accordance with the present invention. As shown in FIG. 4A-4F, the corresponding epitaxial carrier position measurement distribution images of the wholesale photodiode epitaxial wafers are sequentially displayed on the display interface 1 in an overlapping manner. Although FIGS. 4A-4F show separate images, in reality, the images of FIGS. 4A-4F are continuously displayed in an overlapping manner to facilitate user observation of variations in manufacturing conditions between batches and batches of light-emitting diodes. . This overlapping and sequential display of images allows the user to "track" the physical variations of multiple batches of products, allowing the user to determine if process conditions need to be modified.
在本發明之圖式中所顯示的磊晶片圖像數量以及磊晶載盤圖像數量乃是為了示範之目的而提出，其不應被視為限制，吾人可依實際情況來設定這些磊晶片圖像與磊晶載盤圖像的數量。The number of epitaxial wafer images and the number of epitaxial carrier images shown in the drawings of the present invention are presented for demonstration purposes, and should not be considered as limitations, and we can set these epitaxial wafers according to actual conditions. The number of images and epitaxial carrier images.
依照本發明之方法，吾人可清楚且方便地觀察到在不同時期所生產之發光二極體磊晶片的物性分佈差異以及製造條件變異。例如，磊晶工程師可使用雷射光激發光光譜儀來「追蹤」多批發光二極體磊晶片對應於有機金屬化學氣相沉積(MOCVD)磊晶設備中之磊晶載盤位置的磊晶結果分佈，以獲得用來診斷製程條件的資訊，磊晶工程師可依照此種資訊來判定是否需要修改製程條件，以期提高產品良率。According to the method of the present invention, it is clear and convenient to observe the difference in the physical property distribution of the light-emitting diode epitaxial wafers produced at different times and variations in manufacturing conditions. For example, an epitaxial engineer can use a laser light excitation spectrometer to "track" the epitaxial result distribution of a multi-popular photodiode epitaxial wafer corresponding to an epitaxial carrier position in an organometallic chemical vapor deposition (MOCVD) epitaxial device. To obtain information used to diagnose process conditions, Epistar engineers can use this information to determine if process conditions need to be modified to improve product yield.
雖然本發明已參考較佳實施例及圖式詳加說明，但熟習本項技藝者可瞭解在不離開本發明之精神與範疇的情況下，可進行各種修改、變化以及等效替代，然而這些修改、變化以及等效替代仍落入本發明所附的申請專利範圍內。While the invention has been described herein with reference to the preferred embodiments of the embodiments of the invention Modifications, variations, and equivalents are still within the scope of the appended claims.
1．．．顯示介面1. . . Display interface
3．．．發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像3. . . Corresponding epitaxial carrier position measurement distribution image of light-emitting diode epitaxial wafer
5．．．發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像5. . . Corresponding epitaxial carrier position measurement distribution image of light-emitting diode epitaxial wafer
7．．．發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像7. . . Corresponding epitaxial carrier position measurement distribution image of light-emitting diode epitaxial wafer
9．．．發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像9. . . Corresponding epitaxial carrier position measurement distribution image of light-emitting diode epitaxial wafer
11．．．發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像11. . . Corresponding epitaxial carrier position measurement distribution image of light-emitting diode epitaxial wafer
13．．．發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像13. . . Corresponding epitaxial carrier position measurement distribution image of light-emitting diode epitaxial wafer
31．．．磊晶載盤圖像31. . . Epitaxial carrier image
100．．．流程圖100. . . flow chart
101．．．對多批發光二極體磊晶片上的多個量測位置進行量測，以獲得每一量測位置的量測資料，其中每一磊晶片具有對應於一相關磊晶載盤上之一配置位置的第一序列，以及每一量測位置具有對應於一相關磊晶片上之一地址的第二序列101. . . Measuring a plurality of measurement locations on the plurality of wholesale photodiode epitaxial wafers to obtain measurement data for each measurement location, wherein each epitaxial wafer has a configuration location corresponding to an associated epitaxial carrier a first sequence, and each measurement location has a second sequence corresponding to an address on an associated epitaxial wafer
103．．．依照該第一序列以及該第二序列，藉由顏色標度方式以各批發光二極體磊晶片的量測資料來建立對應磊晶載盤位置量測分佈圖像103. . . According to the first sequence and the second sequence, the measurement data of the corresponding epitaxial carrier position measurement is established by using the color scale method to measure the data of each wholesale photodiode.
105．．．在一顯示介面上以重疊方式依序顯示各批發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像105. . . Displaying the corresponding epitaxial carrier position measurement distribution image of each wholesale photodiode epitaxial wafer in an overlapping manner on a display interface
200．．．流程圖200. . . flow chart
201．．．對多批發光二極體磊晶片上的多個量測位置進行光激發光量測，以獲得每一量測位置的光激發光量測資料，其中每一磊晶片具有對應於一相關磊晶載盤上之一配置位置的第一序列，以及每一量測位置具有對應於一相關磊晶片上之一地址的第二序列201. . . Performing photoexcitation measurement on a plurality of measurement positions on the plurality of wholesale photodiode epitaxial wafers to obtain photoexcitation measurement data for each measurement position, wherein each epitaxial wafer has a corresponding epitaxial load a first sequence of locations on a disc, and each measurement location having a second sequence corresponding to an address on an associated epitaxial wafer
203．．．依照該第一序列以及該第二序列，藉由顏色標度方式以各批發光二極體磊晶片的光激發光量測資料來建立對應磊晶載盤位置量測分佈圖像203. . . According to the first sequence and the second sequence, the optical excitation light measurement data of each wholesale photodiode epitaxial wafer is determined by a color scaling method to establish a corresponding epitaxial carrier position measurement distribution image.
205．．．在一顯示介面上以重疊方式依序顯示各批發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像205. . . Displaying the corresponding epitaxial carrier position measurement distribution image of each wholesale photodiode epitaxial wafer in an overlapping manner on a display interface
在本發明之隨附圖式中，相同的元件是藉由相同的參考符號加以標示。In the accompanying drawings, the same elements are denoted by the same reference numerals.
圖1顯示發光二極體磊晶片之對應磊晶載盤位置量測分佈圖像之呈現方法的流程圖。FIG. 1 is a flow chart showing a method for presenting a corresponding epitaxial carrier position measurement distribution image of a light emitting diode epitaxial wafer.
圖2顯示發光二極體磊晶片之對應磊晶載盤位置量測分佈圖像之呈現方法的流程圖。2 is a flow chart showing a method for presenting a corresponding epitaxial carrier position measurement distribution image of a light emitting diode epitaxial wafer.
圖3顯示依照本發明之發光二極體磊晶片之對應磊晶載盤位置量測分佈圖像之一呈現方法的示意圖。3 is a schematic diagram showing one of the methods for presenting a corresponding epitaxial carrier position measurement distribution image of a light-emitting diode epitaxial wafer according to the present invention.
圖4A-4F顯示依照本發明之發光二極體磊晶片之對應磊晶載盤位置量測分佈圖像之另一呈現方法的連續示意圖。4A-4F are sequential diagrams showing another method of presenting a corresponding epitaxial carrier position measurement distribution image of a light emitting diode epitaxial wafer in accordance with the present invention.
200．．．流程圖200. . . flow chart
201．．．對多批發光二極體磊晶片上的多個量測位置進行光激發光量測，以獲得每一量測位置的光激發光量測資料，其中每一磊晶片具有對應於一相關磊晶載盤上之一配置位置的第一序列，以及每一量測位置具有對應於一相關磊晶片上之一地址的第二序列201. . . Performing photoexcitation measurement on a plurality of measurement positions on the plurality of wholesale photodiode epitaxial wafers to obtain photoexcitation measurement data for each measurement position, wherein each epitaxial wafer has a corresponding epitaxial load a first sequence of locations on a disc, and each measurement location having a second sequence corresponding to an address on an associated epitaxial wafer
203．．．依照該第一序列以及該第二序列，藉由顏色標度方式以各批發光二極體磊晶片的光激發光量測資料來建立對應磊晶載盤位置量測分佈圖像203. . . According to the first sequence and the second sequence, the optical excitation light measurement data of each wholesale photodiode epitaxial wafer is determined by a color scaling method to establish a corresponding epitaxial carrier position measurement distribution image.
205．．．在一顯示介面上以重疊方式依序顯示各批發光二極體磊晶片的對應磊晶載盤位置量測分佈圖像205. . . Displaying the corresponding epitaxial carrier position measurement distribution image of each wholesale photodiode epitaxial wafer in an overlapping manner on a display interface
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|---|---|---|---|---|
| US4368959A (en) * | 1980-11-19 | 1983-01-18 | Amato Robert J D | Apparatus for and method of testing vision |
| US7056000B2 (en) * | 2000-04-28 | 2006-06-06 | Viveen Limited | Apparatus for testing a light emitting device, and a method for testing light emitting devices |
| US20090236506A1 (en) * | 2007-11-20 | 2009-09-24 | Luminus Devices, Inc. | Light-emitting device on-wafer test systems and methods |
| KR100977865B1 (en) * | 2008-07-17 | 2010-08-24 | 금오공과대학교 산학협력단 | Testing method by using brightness variation of organic light-emitting diode display |
| US7812624B1 (en) * | 2009-05-26 | 2010-10-12 | High Power Lighting Corp. | Testing method for LED module |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4368959A (en) * | 1980-11-19 | 1983-01-18 | Amato Robert J D | Apparatus for and method of testing vision |
| US7056000B2 (en) * | 2000-04-28 | 2006-06-06 | Viveen Limited | Apparatus for testing a light emitting device, and a method for testing light emitting devices |
| US20090236506A1 (en) * | 2007-11-20 | 2009-09-24 | Luminus Devices, Inc. | Light-emitting device on-wafer test systems and methods |
| KR100977865B1 (en) * | 2008-07-17 | 2010-08-24 | 금오공과대학교 산학협력단 | Testing method by using brightness variation of organic light-emitting diode display |
| US7812624B1 (en) * | 2009-05-26 | 2010-10-12 | High Power Lighting Corp. | Testing method for LED module |
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