JP2013258301A - Organic thin-film transistor insulating layer material - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an organic thin-film transistor insulating layer material which is highly resistant to vapor of a metal or alloy used in a sputtering method.SOLUTION: The organic thin-film transistor insulating layer material contains: a polymer compound (A) containing a repeating unit having a cyclic ether structure; a novolak type epoxy resin (B); an organosilsesquioxane compound (C) having at least one group selected from the group consisting of a group represented by formula (3) and a group represented by specific general structural formula; and a compound (D) capable of generating an acid by irradiation with an electromagnetic wave or an electron beam or by the action of heat.

Description

  The present invention relates to an organic thin film transistor insulating layer material.

  Since an organic thin film transistor can be manufactured at a lower temperature than an inorganic semiconductor, a plastic substrate or a film can be used as the substrate. By using such a substrate, an element that is flexible, lightweight, and hardly broken can be obtained. In some cases, an element can be manufactured by application of a solution containing an organic material or film formation using a printing method, and a large number of elements can be manufactured on a large-area substrate at low cost.

  Furthermore, since there are a wide variety of materials that can be used for studying organic thin film transistors, devices having a wide range of characteristics can be manufactured by using materials having different molecular structures for study.

  A metal or an alloy is usually used for an electrode of the organic thin film transistor, and a metal or alloy electrode is formed above the organic layer. The metal or alloy electrode is usually formed by forming a metal layer or alloy layer on the entire surface of the organic layer using a sputtering method, and then patterning. Through this process, a member having a large number of elements on a large-area substrate can be easily manufactured.

However, since metal and alloy vapors used in sputtering have high energy, they may alter organic compounds in the contacted organic layer.
In the etching process and the lift-off process for patterning the metal layer or the alloy layer, an etching solution containing a strong alkali or a strong acid is used. The strong alkali or strong acid contained in the etching solution may alter the organic compound in the underlying organic layer.

  When the organic compound in the organic layer changes in quality due to the vapor of metal or alloy, strong acid or strong alkali, the characteristics of the surface of the organic layer exposed by patterning at the time of electrode formation change from the characteristics of the surface before the electrode formation. Adversely affects the performance of For example, when an organic insulating material is used as a gate insulating layer of an organic thin film transistor, a metal layer is formed by directly depositing a metal on the gate insulating layer by a sputtering method, and the metal layer is patterned to form a source electrode and a drain electrode. As a result, the hydrophilic surface of the gate insulating layer is exposed, and the transistor characteristics deteriorate.

  Patent Document 1 describes an organic thin film transistor in which a solution containing polytitanometalloxane and 1-butanol is applied to the entire surface of a gate insulating layer made of an organic compound to form a barrier layer having high solvent resistance. Yes. The gate insulating layer comprises a metal or alloy vapor used in forming a metal layer or an alloy layer by the barrier layer, an etching solution used in patterning the metal layer or an alloy layer, and an organic semiconductor layer. It is protected from the organic solvent used when forming.

International Publication No. 2007/99689

  However, polytitanometalloxane is chemically stable, and it is necessary to use a very strong alkaline solution in order to etch the polytitanometalloxane layer. Contact with the surface will damage the surface of the organic layer. Therefore, a material capable of forming an organic thin film transistor insulating layer that does not require the formation of a barrier layer on the insulating layer and has high resistance to vapor of a metal or alloy used in the sputtering method has been demanded.

  An object of the present invention is to provide an organic thin film transistor insulating layer material for forming an organic thin film transistor insulating layer, which is highly resistant to vapor of a metal or alloy used in a sputtering method.

（３）
〔式中、Ｒ^１１、Ｒ^１２、及びＲ^１３は、それぞれ独立に、水素原子又は炭素数１〜２０の有機基を表す。〕

（４）
〔式中、Ｒ^１４、Ｒ^１５、Ｒ^１６、Ｒ^１７、及びＲ^１８は、それぞれ独立に、水素原子又は炭素数１〜２０の有機基を表す。〕 That is, the present invention firstly
A polymer compound (A) containing a repeating unit having a cyclic ether structure;
Novolac type epoxy resin (B),
An organosilsesquioxane compound (C) having at least one group selected from the group consisting of a group represented by formula (3) and a group represented by formula (4);
Provided is an organic thin film transistor insulating layer material containing a compound (D) capable of generating an acid by the action of electromagnetic waves or electron beams, or heat.

(3)
[In formula, R < ¹¹ >, R < ¹² > and R < ¹³ > represent a hydrogen atom or a C1-C20 organic group each independently. ]

(4)
[In formula, R <^14> , R <^15> , R <^16> , R <^17> and R < ¹⁸ > represent a hydrogen atom or a C1-C20 organic group each independently. ]

（１）
〔式中、Ｒ^１は、水素原子又はメチル基を表す。Ｒ^２、Ｒ^３、及びＲ^４は、それぞれ独立に、水素原子又は炭素数１〜２０の有機基を表す。Ｒ^Ａは、二価の基を表す。ａ１は、０又は１の整数を表す。〕

（２）
〔式中、Ｒ^５は、水素原子又はメチル基を表す。Ｒ^６、Ｒ^７、Ｒ^８、Ｒ^９、及びＲ^１０は、それぞれ独立に、水素原子又は炭素数１〜２０の有機基を表す。Ｒ^Ｂは、二価の基を表す。ｂ１は、０又は１の整数を表す。〕 Secondly, the present invention provides the organic thin film transistor insulating layer material, wherein the repeating unit having a cyclic ether structure is a repeating unit represented by the formula (1) or a repeating unit represented by the formula (2).

(1)
[Wherein, R ¹ represents a hydrogen atom or a methyl group. R ² , R ³ , and R ⁴ each independently represent a hydrogen atom or an organic group having 1 to 20 carbon atoms. R ^A represents a divalent group. a1 represents an integer of 0 or 1. ]

(2)
[Wherein, R ⁵ represents a hydrogen atom or a methyl group. R ⁶ , R ⁷ , R ⁸ , R ⁹ , and R ¹⁰ each independently represent a hydrogen atom or an organic group having 1 to 20 carbon atoms. R ^B represents a divalent group. b1 represents an integer of 0 or 1. ]

Thirdly, the present invention provides the organic thin film transistor insulating layer material, wherein the polymer compound (A) further contains a repeating unit containing the following first functional group.

First functional group: a functional group capable of generating a second functional group capable of reacting with active hydrogen by the irradiation of electromagnetic waves or the action of heat.

  Fourthly, the present invention provides the organic thin film transistor insulating layer material, wherein the first functional group is an isocyanato group blocked with a blocking agent or an isothiocyanato group blocked with a blocking agent.

（５）
〔式中、Ｘａは、酸素原子又は硫黄原子を表し、Ｒ^１９及びＲ^２０は、それぞれ独立に、水素原子又は炭素数１〜２０の有機基を表す。〕 Fifthly, the present invention provides the organic thin film transistor insulating layer material, wherein the isocyanato group blocked with the blocking agent and the isothiocyanato group blocked with the blocking agent are groups represented by the formula (5).

(5)
Wherein, Xa represents an oxygen atom or a sulfur ^{atom, R 19} and ^{R 20} each independently represent a hydrogen atom or an organic group having 1 to 20 carbon atoms. ]

（６）
〔式中、Ｘｂは、酸素原子又は硫黄原子を表し、Ｒ^２１、Ｒ^２２、及びＲ^２３は、それぞれ独立に、水素原子又は炭素数１〜２０の有機基を表す。〕 Sixth, the present invention provides the organic thin film transistor insulating layer material, wherein the isocyanato group blocked with the blocking agent and the isothiocyanato group blocked with the blocking agent are groups represented by the formula (6).

(6)
[Wherein, Xb represents an oxygen atom or a sulfur atom, and R ²¹ , R ²² , and R ²³ each independently represents a hydrogen atom or an organic group having 1 to 20 carbon atoms. ]

  Seventhly, this invention provides the organic thin-film transistor which has the organic thin-film transistor insulating layer formed using the said organic thin-film transistor insulating-layer material.

  Eighthly, the present invention provides the organic thin film transistor, wherein the organic thin film transistor insulating layer is a gate insulating layer.

  Ninthly, the present invention provides a display member including the organic thin film transistor.

  Tenthly, the present invention provides a display including the display member.

  The organic thin film transistor insulating layer material of the present invention has high resistance to vapors of metals or alloys used in the sputtering method, and the organic thin film transistor having an insulating layer formed using the organic thin film transistor insulating layer material of the present invention is an electrode formed by sputtering. The rise of the absolute value of the threshold voltage and the hysteresis at the time of forming are suppressed.

It is a schematic cross section which shows the structure of the bottom gate top contact type organic thin-film transistor which is one Embodiment of this invention. It is a schematic cross section which shows the structure of the bottom gate bottom contact type organic thin-film transistor which is other embodiment of this invention.

  In the present specification, the “polymer compound” refers to a compound containing a structure in which a plurality of the same structural units are repeated in the molecule, and includes a so-called dimer. On the other hand, the “low molecular compound” means a compound that does not have the same structural unit repeatedly in the molecule.

<Polymer Compound (A)>
The organic thin film transistor insulating layer material of the present invention contains a polymer compound (A), and the polymer compound (A) contains a repeating unit containing a cyclic ether structure in the molecule.

  Examples of the repeating unit containing a cyclic ether structure include a repeating unit represented by the formula (1) and a repeating unit represented by the formula (2).

In formula (1), R ¹ represents a hydrogen atom or a methyl group. In one certain form, it is a methyl group.

In formula (1), R ^A represents a divalent group, and connects the main chain and the side chain of the polymer compound. The divalent group may be any group that does not exhibit reactivity under environmental conditions for crosslinking the organic thin film transistor insulating layer material used in the present invention. Examples of the divalent group include a divalent organic group having 1 to 20 carbon atoms, —O—, —CO—, —C (═O) O—, —OC (═O) —, —NHC ( ═O) —, —C (═O) NH—, —NHC (═O) O—, —OC (═O) NH— and groups in which these groups are combined. a1 represents an integer of 0 or 1. In one certain form, a1 is 1 and R ^<A> is -C (= O) O-.

The divalent organic group having 1 to 20 carbon atoms represented by R ^A may be linear, branched or cyclic, and may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group. Also good. The divalent organic group having 1 to 20 carbon atoms may have a fluorine atom. Examples of the divalent organic group having 1 to 20 carbon atoms include a divalent linear aliphatic hydrocarbon group having 1 to 20 carbon atoms and a divalent branched aliphatic hydrocarbon group having 3 to 20 carbon atoms. Group, a C3-C20 bivalent cyclic hydrocarbon group, and the C6-C30 bivalent aromatic hydrocarbon group which may be substituted are mentioned. Among them, a divalent linear aliphatic hydrocarbon group having 1 to 6 carbon atoms, a divalent branched aliphatic hydrocarbon group having 3 to 6 carbon atoms, and a divalent cyclic hydrocarbon group having 3 to 6 carbon atoms. In addition, an optionally substituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms is preferable.

  Specific examples of the divalent linear aliphatic hydrocarbon group, divalent branched aliphatic hydrocarbon group, and divalent cyclic hydrocarbon group include a methylene group, an ethylene group, a propylene group, a butylene group, and a pentylene group. Hexylene group, isopropylene group, isobutylene group, dimethylpropylene group, cyclopropylene group, cyclobutylene group, cyclopentylene group and cyclohexylene group.

  Specific examples of the optionally substituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms include phenylene group, naphthylene group, anthrylene group, dimethylphenylene group, trimethylphenylene group, ethylenephenylene group, and diethylenephenylene group. , Triethylenephenylene group, propylenephenylene group, butylenephenylene group, methylnaphthylene group, dimethylnaphthylene group, trimethylnaphthylene group, vinylnaphthylene group, ethenylnaphthylene group, methylanthrylene group, and ethylanthrylene group. Can be mentioned.

In formula (1), R ² , R ³ , and R ⁴ each independently represent a hydrogen atom or an organic group having 1 to 20 carbon atoms. The organic group having 1 to 20 carbon atoms may be linear, branched or cyclic, and may be saturated or unsaturated. The organic group having 1 to 20 carbon atoms may have a halogen atom.

Examples of the organic group having 1 to 20 carbon atoms represented by R ² , R ³ , and R ⁴ include a linear hydrocarbon group having 1 to 20 carbon atoms and a branched hydrocarbon group having 3 to 20 carbon atoms. C3-C20 cyclic hydrocarbon group and C6-C30 aromatic hydrocarbon group are mentioned, Preferably, it is a C1-C6 linear hydrocarbon group, C3-C6 branching And a cyclic hydrocarbon group having 3 to 6 carbon atoms and an aromatic hydrocarbon group having 6 to 20 carbon atoms.

  The hydrogen atom contained in the linear hydrocarbon group having 1 to 20 carbon atoms, the branched hydrocarbon group having 3 to 20 carbon atoms, and the cyclic hydrocarbon group having 3 to 20 carbon atoms may be substituted with a fluorine atom. Good.

  In the aromatic hydrocarbon group having 6 to 30 carbon atoms, a hydrogen atom in the group may be substituted with a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, or the like, and may contain an alkyl group.

Specific examples of the organic group having 1 to 20 carbon atoms include methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, isopropyl group, isobutyl group, tertiary butyl group, cyclopropyl group, cyclobutyl group, Cyclopentyl group, cyclohexyl group, cyclopentynyl group, cyclohexylinyl group, trifluoromethyl group, trifluoroethyl group, phenyl group, naphthyl group, anthryl group, tolyl group, xylyl group, dimethylphenyl group, trimethylphenyl group, ethylphenyl Group, diethylphenyl group, triethylphenyl group, propylphenyl group, butylphenyl group, methylnaphthyl group, dimethylnaphthyl group, trimethylnaphthyl group, vinylnaphthyl group, ethenylnaphthyl group, methylanthryl group, ethylanthryl group, chlorophenyl group Fine-bromophenyl group.
As the organic group having 1 to 20 carbon atoms, an alkyl group is preferable.

In formula (2), R ⁵ represents a hydrogen atom or a methyl group. In some one aspect, R ⁵ is a methyl group.

In formula (2), R ^B represents a divalent group. The definition and specific examples of the divalent group represented by R ^B are the same as the definition and specific examples of the divalent group represented by R ^A described above. b1 represents an integer of 0 or 1. In some one form, b1 is 1, ^{R B} is -C (= O) is O-.

Wherein ^{(2), R 6, R} 7, R 8, R 9, and ^{R 10} represents a hydrogen atom or an organic group having 1 to 20 carbon atoms. The definitions and specific examples of the organic group having 1 to 20 carbon atoms represented by R ⁶ , R ⁷ , R ⁸ , R ⁹ , and R ¹⁰ are represented by the aforementioned R ² , R ³ , and R ^4. The definition and specific examples of the organic group having 1 to 20 carbon atoms are the same. As the organic group having 1 to 20 carbon atoms represented by R ⁶ , R ⁷ , R ⁸ , R ⁹ and R ¹⁰ , an alkyl group is preferable.

One aspect | mode of the high molecular compound (A) of this invention contains the repeating unit represented by the repeating unit represented by Formula (1) or Formula (2), and also contains the following 1st functional groups. It is a high molecular compound containing a repeating unit.
First functional group: a functional group capable of generating a second functional group capable of reacting with active hydrogen by the irradiation of electromagnetic waves or the action of heat.

  In this specification, “active hydrogen” means a hydrogen atom bonded to an oxygen atom, sulfur atom or nitrogen atom, and “active hydrogen compound” means a compound having one or more such active hydrogens. means.

  The first functional group does not react with active hydrogen, but when heat is applied to the first functional group, a second functional group is generated, and the second functional group reacts with active hydrogen. That is, the first functional group can be deprotected by the action of heat to generate a second functional group that can react with active hydrogen. The second functional group reacts with a hydroxyl group generated from the cyclic ether structure when the polymer compound (A) is polymerized, and is bonded to the hydroxyl group, thereby generating a compound having a crosslinked structure inside the organic thin film transistor insulating layer. The Moreover, when the hydroxyl group reacts with the second functional group, the amount of the hydroxyl group in the compound contained in the organic thin film transistor insulating layer is reduced, and the polarization of the organic thin film transistor insulating layer is suppressed.

  In the step of forming the organic thin film transistor insulating layer, the second functional group is protected (blocked) until an electromagnetic wave or heat is applied, and is present in the organic thin film transistor insulating layer material in the form of the first functional group. . As a result, the storage stability of the organic thin film transistor insulating layer material is improved.

  Preferable examples of the first functional group include an isocyanato group blocked with a blocking agent and an isothiocyanato group blocked with a blocking agent.

  An isocyanate group blocked with a blocking agent can be produced by reacting an isocyanate group with a blocking agent having only one active hydrogen capable of reacting with the isocyanate group in one molecule.

  The isothiocyanato group blocked with the blocking agent can be produced by reacting a blocking agent having only one active hydrogen capable of reacting with the isothiocyanato group in one molecule with the isothiocyanato group.

  The blocking agent preferably dissociates at a temperature of 170 ° C. or lower after reacting with an isocyanato group or an isothiocyanato group. Examples of the blocking agent include alcohol compounds, phenol compounds, active methylene compounds, mercaptan compounds, acid amide compounds, acid imide compounds, imidazole compounds, urea compounds, and oxime compounds. , Amine compounds, imine compounds, bisulfites, pyridine compounds and pyrazole compounds. A blocking agent may be used individually and may be used in mixture of 2 or more types. Preferable blocking agents include oxime compounds and pyrazole compounds.

  Specific blocking agents are exemplified below. Examples of the alcohol compound include methanol, ethanol, propanol, butanol, 2-ethylhexanol, methyl cellosolve, butyl cellosolve, methyl carbitol, benzyl alcohol, and cyclohexanol. Examples of the phenol-based compound include phenol, cresol, ethylphenol, butylphenol, nonylphenol, dinonylphenol, styrenated phenol, and hydroxybenzoic acid ester. Examples of the active methylene compound include dimethyl malonate, diethyl malonate, methyl acetoacetate, ethyl acetoacetate, and acetylacetone. Examples of mercaptan compounds include butyl mercaptan and dodecyl mercaptan. Examples of the acid amide compound include acetanilide, acetic acid amide, ε-caprolactam, δ-valerolactam, and γ-butyrolactam. Examples of the acid imide compound include succinimide and maleic imide. Examples of the imidazole compound include imidazole and 2-methylimidazole. Examples of the urea compound include urea, thiourea, and ethylene urea. Examples of the oxime compound include formaldoxime, acetaldoxime, acetoxime, methylethylketoxime, and cyclohexanone oxime. Examples of the amine compound include diphenylamine, aniline, and carbazole. Examples of the imine compound include ethyleneimine and polyethyleneimine. Examples of the bisulfite include sodium bisulfite. Examples of the pyridine compound include 2-hydroxypyridine and 2-hydroxyquinoline. Examples of the pyrazole-based compound include 3,5-dimethylpyrazole and 3,5-diethylpyrazole.

  Examples of the isocyanato group blocked with the blocking agent and the isothiocyanato group blocked with the blocking agent that may be used in the present invention include a group represented by the formula (5) and a group represented by the formula (6). Is preferred.

In the formula (5) and (6), ^{X a} represents an oxygen atom or a sulfur atom, ^{X b} represents an oxygen atom or a sulfur ^{atom, R 19, R 20, R} 21, R 22, and ^{R 23} Each independently represents a hydrogen atom or an organic group having 1 to 20 carbon atoms.

The definition and specific examples of the organic group having 1 to 20 carbon atoms represented by R ¹⁹ , R ²⁰ , R ²¹ , R ²² , and R ²³ are the carbon numbers represented by the aforementioned R ² , R ³ , and R ^4. It is the same as the definition and specific example of the organic group of 1-20. As the organic group having 1 to 20 carbon atoms represented by R ¹⁹ , R ²⁰ , R ²¹ , R ²² , and R ²³ , an alkyl group is preferable.

In one certain form, R <^19> , R <^20> , R <^21> , R <^22> and R <^23> are hydrogen atoms.

  Examples of the isocyanato group blocked with a blocking agent include O- (methylideneamino) carboxyamino group, O- (1-ethylideneamino) carboxyamino group, O- (1-methylethylideneamino) carboxyamino group, O- [1-methylpropylideneamino] carboxyamino group, (N-3,5-dimethylpyrazolylcarbonyl) amino group, (N-3-ethyl-5-methylpyrazolylcarbonyl) amino group, (N-3,5-diethyl) Pyrazolylcarbonyl) amino group, (N-3-propyl-5-methylpyrazolylcarbonyl) amino group, and (N-3-ethyl-5-propylpyrazolylcarbonyl) amino group.

  Examples of the isothiocyanato group blocked with a blocking agent include an O- (methylideneamino) thiocarboxyamino group, an O- (1-ethylideneamino) thiocarboxyamino group, and an O- (1-methylethylideneamino) thiocarboxyamino group. , O- [1-methylpropylideneamino] thiocarboxyamino group, (N-3,5-dimethylpyrazolylthiocarbonyl) amino group, (N-3-ethyl-5-methylpyrazolylthiocarbonyl) amino group, (N -3,5-diethylpyrazolylthiocarbonyl) amino group, (N-3-propyl-5-methylpyrazolylthiocarbonyl) amino group, and (N-3-ethyl-5-propylpyrazolylthiocarbonyl) amino group. It is done.

  The first functional group is preferably an isocyanato group blocked with a blocking agent.

  The polymer compound (A) includes, for example, a polymerizable monomer that is a raw material of the repeating unit represented by the formula (1) or a polymerizable monomer that is a raw material of the repeating unit represented by the formula (2); A polymerizable monomer mixture containing a polymerizable monomer containing a functional group can be produced by a method of copolymerizing using a photopolymerization initiator or a thermal polymerization initiator.

  As a polymerizable monomer used as the raw material of the repeating unit represented by Formula (1), glycidyl acrylate, glycidyl methacrylate, 2-glycidyl ethyl acrylate, and 2-glycidyl ethyl methacrylate are mentioned, for example.

  As a polymerizable monomer used as the raw material of the repeating unit represented by Formula (2), 3-acryloyloxymethyl-3-ethyloxetane and 3-methacryloyloxymethyl-3-ethyloxetane are mentioned, for example.

  As a polymerizable monomer containing a 1st functional group, the monomer which has either the isocyanato group blocked with the blocking agent, the isothiocyanate group blocked with the blocking agent, and an unsaturated bond is mentioned, for example. A monomer having any of an isocyanato group blocked with the blocking agent and an isothiocyanato group blocked with the blocking agent and an unsaturated bond includes a compound having either an isocyanato group, an isothiocyanato group, and an unsaturated bond; It can be produced by reacting with an agent. As the unsaturated bond, a double bond is preferable.

Examples of the compound having a double bond and an isocyanato group include 2-acryloyloxyethyl isocyanate, 2-methacryloyloxyethyl isocyanate, and 2- (2′-methacryloyloxyethyl) oxyethyl isocyanate.
Examples of the compound having a double bond and an isothiocyanato group include 2-acryloyloxyethyl isothiocyanate, 2-methacryloyloxyethyl isothiocyanate, and 2- (2′-methacryloyloxyethyl) oxyethyl isothiocyanate. .

  The said blocking agent can be used suitably for manufacture of the polymerizable monomer containing a 1st functional group. A compound having either an isocyanato group or an isothiocyanato group and an unsaturated bond is reacted with a blocking agent, so that either the isocyanato group blocked with the blocking agent or the isothiocyanato group blocked with the blocking agent is unsaturated. In the reaction for producing a monomer having a bond, an organic solvent, a catalyst, or the like can be added as necessary.

  Examples of the monomer having an isocyanate group blocked with a blocking agent and a double bond include 2- [O- [1′-methylpropylideneamino] carboxyamino] ethyl-methacrylate and 2- [N- [1 ', 3'-dimethylpyrazolyl] carbonylamino] ethyl-methacrylate.

  Examples of the monomer having an isothiocyanato group blocked with a blocking agent and a double bond include 2- [O- [1′-methylpropylideneamino] thiocarboxyamino] ethyl-methacrylate and 2- [N -[1 ', 3'-dimethylpyrazolyl] thiocarbonylamino] ethyl-methacrylate.

  Examples of the photopolymerization initiator that can be used for the production of the polymer compound (A) include acetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 4-isopropyl-2-hydroxy. 2-methylpropiophenone, 2-hydroxy-2-methylpropiophenone, 4,4′-bis (diethylamino) benzophenone, benzophenone, methyl (o-benzoyl) benzoate, 1-phenyl-1,2-propanedione -2- (O-ethoxycarbonyl) oxime, 1-phenyl-1,2-propanedione-2- (o-benzoyl) oxime, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin Carbonyl compounds such as tilether, benzyl, benzyldimethyl ketal, benzyldiethyl ketal, diacetyl, anthraquinone derivatives such as methylanthraquinone, chloroanthraquinone, chlorothioxanthone, 2-methylthioxanthone, 2-isopropylthioxanthone, and thioxanthone derivatives, diphenyl disulfide, dithiocarbamate, etc. Of the sulfur compounds.

  When light energy is used as energy for initiating copolymerization, the wavelength of light irradiated to the polymerizable monomer is preferably 360 nm or more, and more preferably 360 to 450 nm.

  The thermal polymerization initiator that can be used for the production of the polymer compound (A) may be any compound that serves as an initiator for radical polymerization. For example, 2,2′-azobisisobutyronitrile, 2,2 ′ -Azobisisovaleronitrile, 2,2'-azobis (2,4-dimethylvaleronitrile), 4,4'-azobis (4-cyanovaleric acid), 1,1'-azobis (cyclohexanecarbonitrile), Azo compounds such as 2,2′-azobis (2-methylpropane) and 2,2′-azobis (2-methylpropionamidine) dihydrochloride, methyl ethyl ketone peroxide, methyl isobutyl ketone peroxide, cyclohexanone peroxide, acetylacetone Ketone peroxides such as peroxide, isobutyl peroxide, benzoyl peroxide, , 4-dichlorobenzoyl peroxide, o-methylbenzoyl peroxide, lauroyl peroxide, p-chlorobenzoyl peroxide and other diacyl peroxides, 2,4,4-trimethylpentyl-2-hydroperoxide, diisopropylbenzene hydro Hydroperoxides such as peroxide, cumene hydroperoxide, tertiary butyl hydroperoxide, dicumyl peroxide, tertiary butyl cumyl peroxide, ditertiary butyl peroxide, tris (tertiary butyl peroxy) triazine, etc. Peroxyketals such as dialkyl peroxides, 1,1-ditertiary butyl peroxycyclohexane, 2,2-di (tertiary butyl peroxy) butane, tertiary butyl pers Xypivalate, tertiary butyl peroxy-2-ethylhexanoate, tertiary butyl peroxyisobutyrate, ditertiary butyl peroxyhexahydroterephthalate, ditertiary butyl peroxyazelate, tertiary butyl peroxy-azerate , 5-trimethylhexanoate, tertiary butyl peroxyacetate, tertiary butyl peroxybenzoate, alkyl peresters such as ditertiary butyl peroxytrimethyladipate, diisopropyl peroxydicarbonate, di-sec-butylperoxydi Examples thereof include peroxycarbonates such as carbonate and tertiary butyl peroxyisopropyl carbonate.

  The polymer compound (A) includes a polymerizable monomer that is a raw material of the repeating unit represented by the formula (1), a polymerizable monomer that is a raw material of the repeating unit represented by the formula (2), and a first functional group. Other polymerizable monomers other than the contained polymerizable monomer may be added during the polymerization.

  Additional polymerizable monomers used include, for example, acrylic esters and derivatives thereof, methacrylic esters and derivatives thereof, styrene and derivatives thereof, methacrylonitrile and derivatives thereof, acrylonitrile and derivatives thereof, and vinyls of organic carboxylic acids. Esters and derivatives thereof, allyl esters and derivatives of organic carboxylic acids, dialkyl esters and derivatives of fumaric acid, dialkyl esters and derivatives of maleic acid, dialkyl esters and derivatives of itaconic acid, N-vinylamide derivatives of organic carboxylic acids , Terminal unsaturated hydrocarbons and derivatives thereof, and organic germanium derivatives containing unsaturated hydrocarbon groups.

  The kind of the polymerizable monomer that is additionally used is appropriately selected according to the characteristics required for the organic thin film transistor insulating layer. From the viewpoint of excellent durability against solvents and reducing the hysteresis of organic thin film transistors, the film containing the polymer compound (A) produced using these compounds, such as styrene and styrene derivatives, has a high molecular density. A monomer that forms a hard film is selected. Further, from the viewpoint of adhesion to the adjacent surface of the organic thin film transistor insulating layer such as the gate electrode or the surface of the substrate, the polymer compound (A), such as methacrylic acid ester and its derivative, acrylic acid ester and its derivative, is used. A monomer that imparts plasticity is selected.

  The acrylate ester and its derivative may be a monofunctional acrylate or a polyfunctional acrylate although the amount of use is limited. Examples of acrylic acid esters and derivatives thereof include methyl acrylate, ethyl acrylate, acrylic acid-n-propyl, isopropyl acrylate, acrylic acid-n-butyl, acrylic acid isobutyl, acrylic acid-sec-butyl, and acrylic acid. Hexyl, octyl acrylate, 2-ethylhexyl acrylate, decyl acrylate, isobornyl acrylate, cyclohexyl acrylate, phenyl acrylate, benzyl acrylate, 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, acrylic Acid-3-hydroxypropyl, 2-hydroxybutyl acrylate, 2-hydroxyphenylethyl acrylate, ethylene glycol diacrylate, propylene glycol diacrylate, 1,4-butanediol di Acrylate, diethylene glycol diacrylate, triethylene glycol diacrylate, trimethylolpropane diacrylate, trimethylolpropane triacrylate, pentaerythritol pentaacrylate, 2,2,2-trifluoroethyl acrylate, 2,2,3,3,3- Pentafluoropropyl acrylate, 2- (perfluorobutyl) ethyl acrylate, 3-perfluorobutyl-2-hydroxypropyl acrylate, 2- (perfluorohexyl) ethyl acrylate, 3-perfluorohexyl-2-hydroxypropyl acrylate, 2 -(Perfluorooctyl) ethyl acrylate, 3-perfluorooctyl-2-hydroxypropyl acrylate, 2- (perfluorodecyl) ethyl acetate Relate, 2- (perfluoro-3-methylbutyl) ethyl acrylate, 3- (perfluoro-3-methylbutyl) -2-hydroxypropyl acrylate, 2- (perfluoro-5-methylhexyl) ethyl acrylate, 2- (perfluorocarbon) Fluoro-3-methylbutyl) -2-hydroxypropyl acrylate, 3- (perfluoro-5-methylhexyl) -2-hydroxypropyl acrylate, 2- (perfluoro-7-methyloctyl) ethyl acrylate, 3- (perfluoro -7-methyloctyl) -2-hydroxypropyl acrylate, 1H, 1H, 3H-tetrafluoropropyl acrylate, 1H, 1H, 5H-octafluoropentyl acrylate, 1H, 1H, 7H-dodecafluoroheptyl acrylate, 1H, 1 H, 9H-hexadecafluorononyl acrylate, 1H-1- (trifluoromethyl) trifluoroethyl acrylate, 1H, 1H, 3H-hexafluorobutyl acrylate, N, N-dimethylacrylamide, N, N-diethylacrylamide, and N-acryloylmorpholine.

  The methacrylic acid ester and derivatives thereof may be monofunctional methacrylates, and may be polyfunctional methacrylates although the amount of use is limited. Examples of methacrylic acid esters and derivatives thereof include, for example, methyl methacrylate, ethyl methacrylate, -n-propyl methacrylate, isopropyl methacrylate, -n-butyl methacrylate, isobutyl methacrylate, methacryl Acid-sec-butyl, hexyl methacrylate, octyl methacrylate, 2-ethylhexyl methacrylate, decyl methacrylate, isobornyl methacrylate, cyclohexyl methacrylate, phenyl methacrylate, benzyl methacrylate, meta 2-hydroxyethyl acrylate, 2-hydroxypropyl methacrylate, 3-hydroxypropyl methacrylate, 2-hydroxybutyl methacrylate, 2-hydroxyphenylethyl methacrylate, ethylene glycol Coal dimethacrylate, propylene glycol dimethacrylate, 1,4-butanediol dimethacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, trimethylolpropane dimethacrylate, trimethylolpropane trimethacrylate, pentaerythritol penta Methacrylate, 2,2,2-trifluoroethyl methacrylate, 2,2,3,3,3-pentafluoropropyl methacrylate, 2- (perfluorobutyl) ethyl methacrylate, 3-perfluorobutyl-2- Hydroxypropyl methacrylate, 2- (perfluorohexyl) ethyl methacrylate, 3-perfluorohexyl-2-hydroxypropyl methacrylate, 2- Perfluorooctyl) ethyl methacrylate, 3-perfluorooctyl-2-hydroxypropyl methacrylate, 2- (perfluorodecyl) ethyl methacrylate, 2- (perfluoro-3-methylbutyl) ethyl methacrylate, 3- (per Fluoro-3-methylbutyl) -2-hydroxypropyl methacrylate, 2- (perfluoro-5-methylhexyl) ethyl methacrylate, 2- (perfluoro-3-methylbutyl) -2-hydroxypropyl methacrylate, 3- ( Perfluoro-5-methylhexyl) -2-hydroxypropyl methacrylate, 2- (perfluoro-7-methyloctyl) ethyl methacrylate, 3- (perfluoro-7-methyloctyl) -2-hydroxypropyl methacrylate Relate, 1H, 1H, 3H-tetrafluoropropyl methacrylate, 1H, 1H, 5H-octafluoropentyl methacrylate, 1H, 1H, 7H-dodecafluoroheptyl methacrylate, 1H, 1H, 9H-hexadecafluorononyl methacrylate 1H-1- (trifluoromethyl) trifluoroethyl methacrylate, 1H, 1H, 3H-hexafluorobutyl methacrylate, N, N-dimethylmethacrylamide, N, N-diethylmethacrylamide, and N-acryloyl morpho Phosphorus is mentioned.

  Examples of styrene and derivatives thereof include styrene, 2,4-dimethyl-α-methylstyrene, o-methylstyrene, m-methylstyrene, p-methylstyrene, 2,4-dimethylstyrene, and 2,5-dimethylstyrene. 2,6-dimethylstyrene, 3,4-dimethylstyrene, 3,5-dimethylstyrene, 2,4,6-trimethylstyrene, 2,4,5-trimethylstyrene, pentamethylstyrene, o-ethylstyrene, m -Ethylstyrene, p-ethylstyrene, o-chlorostyrene, m-chlorostyrene, p-chlorostyrene, o-bromostyrene, m-bromostyrene, p-bromostyrene, o-methoxystyrene, m-methoxystyrene, p -Methoxystyrene, o-hydroxystyrene, m-hydroxystyrene, p-hydride Xylstyrene, 2-vinylbiphenyl, 3-vinylbiphenyl, 4-vinylbiphenyl, 1-vinylnaphthalene, 2-vinylnaphthalene, 4-vinyl-p-terphenyl, 1-vinylanthracene, α-methylstyrene, o-isopropenyl Toluene, m-isopropenyltoluene, p-isopropenyltoluene, 2,4-dimethyl-α-methylstyrene, 2,3-dimethyl-α-methylstyrene, 3,5-dimethyl-α-methylstyrene, p-isopropyl -Α-methylstyrene, α-ethylstyrene, α-chlorostyrene, divinylbenzene, divinylbiphenyl, diisopropylbenzene, and 4-aminostyrene.

Examples of methacrylonitrile and derivatives thereof include methacrylonitrile.
Examples of acrylonitrile and its derivatives include acrylonitrile.

  Examples of vinyl esters of organic carboxylic acids and derivatives thereof include vinyl acetate, vinyl propionate, vinyl butyrate, vinyl benzoate, and divinyl adipate.

  Examples of allyl esters of organic carboxylic acids and derivatives thereof include allyl acetate, allyl benzoate, diallyl adipate, diallyl terephthalate, diallyl isophthalate, and diallyl phthalate.

  Examples of the dialkyl ester of fumaric acid and its derivatives include dimethyl fumarate, diethyl fumarate, diisopropyl fumarate, di-sec-butyl fumarate, diisobutyl fumarate, di-n-butyl fumarate, di-2 fumarate. -Ethylhexyl and dibenzyl fumarate.

  Examples of the dialkyl ester of maleic acid and its derivatives include, for example, dimethyl maleate, diethyl maleate, diisopropyl maleate, di-sec-butyl maleate, diisobutyl maleate, di-n-butyl maleate, di-2 maleate -Ethylhexyl and dibenzyl maleate.

  Dialkyl esters of itaconic acid and derivatives thereof include, for example, dimethyl itaconate, diethyl itaconate, diisopropyl itaconate, di-sec-butyl itaconate, diisobutyl itaconate, di-n-butyl itaconate, di-2 itaconate -Ethylhexyl and dibenzyl itaconate are mentioned.

  Examples of N-vinylamide derivatives of organic carboxylic acids include N-methyl-N-vinylacetamide.

  Examples of terminal unsaturated hydrocarbons and derivatives thereof include 1-butene, 1-pentene, 1-hexene, 1-octene, vinylcyclohexane, vinyl chloride, and allyl alcohol.

  Examples of the organic germanium derivative containing an unsaturated hydrocarbon group include allyltrimethylgermanium, allyltriethylgermanium, allyltributylgermanium, trimethylvinylgermanium, and triethylvinylgermanium.

  As a polymerizable monomer used additionally, acrylic acid alkyl ester, methacrylic acid alkyl ester, styrene, acrylonitrile, methacrylonitrile, and allyltrimethylgermanium are preferable from the viewpoint of improving the characteristics of the organic thin film transistor insulating layer.

  When methacrylonitrile and its derivatives, or acrylonitrile and its derivatives are used as additional polymerizable monomers, a cyano group is introduced inside the organic thin film transistor insulating layer, and the solvent resistance and toughness of the organic thin film transistor insulating layer, etc. Will improve. In this case, the dielectric constant of the organic thin film transistor insulating layer is also improved.

  The amount of the repeating unit containing a cyclic ether structure contained in the polymer compound (A) is preferably 1 to 70 mol%, preferably 5 to 50 mol% based on the total amount of the repeating units contained in the polymer compound (A). Is more preferable.

  When the polymer compound (A) contains a repeating unit containing the first functional group, the charged molar amount of the polymerizable monomer containing the first functional group is the amount of all polymerizable monomers involved in the polymerization, Preferably they are 5 mol% or more and 50 mol% or less, More preferably, they are 5 mol% or more and 40 mol% or less. By adjusting the charged molar amount of the polymerizable monomer containing the first functional group within this range, a sufficient crosslinking structure is formed inside the organic thin film transistor insulating layer, and the content of the polar group is kept at a low level. Polarization of the organic thin film transistor insulating layer is suppressed.

  3000-1 million are preferable and, as for the weight average molecular weight of polystyrene conversion of a high molecular compound (A), 5000-500000 are more preferable. The polymer compound (A) may be linear, branched, or cyclic.

Examples of the polymer compound (A) include poly (styrene-co-glycidyl methacrylate), poly (styrene-co-3-methacryloyloxymethyl-3-ethyloxetane), and poly (4-methoxystyrene-co-glycidyl methacrylate). ), Poly (4-methoxystyrene-co-3-methacryloyloxymethyl-3-ethyloxetane), poly (styrene-co-glycidyl methacrylate-co-acrylonitrile), poly (styrene-co-3-methacryloyloxymethyl-3) -Ethyloxetane-co-acrylonitrile),
Poly (4- (methoxymethoxy) styrene-co-glycidyl methacrylate), poly (4- (methoxymethoxy) styrene-co-3-methacryloyloxymethyl-3-ethyloxetane), poly (4- (methoxyethoxymethoxy) styrene -Co-glycidyl methacrylate), poly (4- (methoxyethoxymethoxy) styrene-co-3-methacryloyloxymethyl-3-ethyloxetane), poly (4- (tetrahydropyranyloxy) styrene-co-glycidyl methacrylate), Poly (4- (tetrahydropyranyloxy) styrene-co-3-methacryloyloxymethyl-3-ethyloxetane), poly (4- (2-ethoxyethoxy) styrene-co-glycidyl methacrylate-co- [2- [O -(1'-methylpropylideneami ) Carboxyamino] ethyl-methacrylate]), poly (4- (2-ethoxyethoxy) styrene-co-3-methacryloyloxymethyl-3-ethyloxetane-co- [2- [O- (1'-methylpropylidene) Amino) carboxyamino] ethyl-methacrylate]), poly (4- (tetrahydropyranyloxy) styrene-co-glycidyl methacrylate-co- [2- [O- (1′-methylpropylideneamino) carboxyamino] ethyl- Methacrylate]), poly (4- (tetrahydropyranyloxy) styrene-co-3-methacryloyloxymethyl-3-ethyloxetane-co- [2- [O- (1'-methylpropylideneamino) carboxyamino] ethyl -Methacrylate]), poly (4- (2-ethoxyethoxy) styrene-co-glycidyl Methacrylate-co- [2- [1 ′-(3 ′, 5′-dimethylpyrazolyl) carbonylamino] ethyl-methacrylate]), poly (4- (2-ethoxyethoxy) styrene-co-3-methacryloyloxymethyl -3-ethyloxetane-co- [2- [1 '-(3', 5'-dimethylpyrazolyl) carbonylamino] ethyl-methacrylate]), poly (4- (tetrahydropyranyloxy) styrene-co-glycidyl methacrylate -Co- [2- [1 '-(3', 5'-dimethylpyrazolyl) carbonylamino] ethyl-methacrylate]), poly (4- (tetrahydropyranyloxy) styrene-co-3-methacryloyloxymethyl-3 -Ethyloxetane-co- [2- [1 '-(3', 5'-dimethylpyrazolyl) carbonylamino] ethyl-methacrylate ], Poly (styrene-co-glycidyl methacrylate-co-pentafluorostyrene), poly (styrene-co-3-methacryloyloxymethyl-3-ethyloxetane-co-pentafluorostyrene), poly (styrene-co-glycidyl) Methacrylate-co- [2- [O- (1′-methylpropylideneamino) carboxyamino] ethyl-methacrylate] -co-acrylonitrile) and poly (styrene-co-3-methacryloyloxymethyl-3-ethyloxetane) -Co- [2- [O- (1'-methylpropylideneamino) carboxyamino] ethyl-methacrylate] -co-acrylonitrile).

<Novolac type epoxy resin (B)>
The organic thin film transistor insulating layer material of the present invention contains a novolac type epoxy resin (B). As the novolak type epoxy resin, a hydroxyl group in the phenol novolac resin is glycidyl etherified or (3-ethyl-3-oxetanyl) methyl etherified, and a hydroxyl group in the cresol novolak resin is glycidyl etherified or (3-ethyl- 3-Oxetanyl) methyl etherified resin.

  A compound containing a cyclic ether structure undergoes cationic polymerization in the presence of an acid. The polymer compound (A) and the novolac epoxy resin (B) are cationically polymerized in the presence of an acid to form a crosslinked structure. When cationic polymerization of the polymer compound (A) and the novolac type epoxy resin (B) is performed using a polymerization initiator such as a photoacid generator, a photocationic polymerization initiator, a thermal acid generator, and a thermal cationic polymerization initiator. The polymerization is accelerated by light and heat, and the cross-linking density of the formed organic thin film transistor insulating layer is particularly increased.

  When the crosslinked structure is formed in the organic thin film transistor insulating layer, the movement of molecules is suppressed, and the polarization of the organic thin film transistor insulating layer is suppressed. When the polarization of the organic thin film transistor insulating layer is suppressed, when the organic thin film transistor insulating layer is a gate insulating layer, the hysteresis of the organic thin film transistor is reduced and the operation accuracy of the organic thin film transistor is improved.

<Organosilsesquioxane compound (C)>
The organic thin film transistor insulating layer material of the present invention is an organosilsesquioxane compound having at least one group selected from the group consisting of a group represented by formula (3) and a group represented by formula (4) ( C).

In formula (3) and formula (4), R ¹¹ , R ¹² , R ¹³ , R ¹⁴ , R ¹⁵ , R ¹⁶ , R ¹⁷ , and R ¹⁸ are each independently a hydrogen atom or a C 1-20 carbon atom. Represents an organic group. The definitions and specific examples of the organic group having 1 to 20 carbon atoms represented by R ¹¹ , R ¹² , R ¹³ , R ¹⁴ , R ¹⁵ , R ¹⁶ , R ¹⁷ , and R ¹⁸ include the aforementioned R ² , R ³ , And the definition and specific examples of the organic group having 1 to 20 carbon atoms represented by R ⁴ .
One embodiment of R ¹¹ , R ¹² , R ¹³ , R ¹⁴ , R ¹⁵ , R ¹⁶ , R ¹⁷ , and R ¹⁸ is a hydrogen atom.

  The organosilsesquioxane compound (C) having a group represented by the formula (3) includes, for example, an organoalkoxysilane having no group represented by the formula (3) and a group represented by the formula (4) Hydroxyalkoxysilane is hydrolyzed and condensed in the presence of water and an acid catalyst or an alkali catalyst to obtain a hydrolyzed condensate having a hydrosilyl group, and then the hydrolyzed condensate having a hydrosilyl group and the formula ( It can be obtained by reacting an unsaturated double bond compound having a group represented by 3) in the presence of a transition metal catalyst.

The organosilasesquioxane compound (C) having a group represented by the formula (4) is, for example,
Hydrolytic condensation of organoalkoxysilane having no group represented by formula (3) and no group represented by formula (4) with hydroalkoxysilane in the presence of water and an acid catalyst or an alkali catalyst. To obtain a hydrolyzed condensate having a hydrosilyl group, and then the hydrolyzed condensate having the hydrosilyl group and an unsaturated double bond compound having a group represented by formula (4) in the presence of a transition metal catalyst. It can obtain by making it react.

  Examples of the acid catalyst used for hydrolytic condensation of organoalkoxysilane include hydrochloric acid and acetic acid. Examples of the alkali catalyst include ammonia and triethylamine.

  Examples of the organoalkoxysilane having no group represented by the formula (3) and the group represented by the formula (4) which are raw materials of the organosilasesquioxane compound (C) include organoethoxysilane and organomethoxysilane. Is mentioned. Specific examples of organoethoxysilane and organomethoxysilane include tetraethoxysilane, tetramethoxysilane, methyltriethoxysilane, methyltrimethoxysilane, dimethyldiethoxysilane, dimethyldimethoxysilane, trimethylethoxysilane, trimethylmethoxysilane, ethyltrisilane. Ethoxysilane, ethyltrimethoxysilane, diethyldiethoxysilane, diethyldimethoxysilane, triethylethoxysilane, triethylmethoxysilane, phenyltriethoxysilane, phenyltrimethoxysilane, diphenyldiethoxysilane, diphenyldimethoxysilane, triphenylethoxysilane, tri Phenylmethoxysilane, methylphenyldiethoxysilane, methylphenyldimethoxysilane, dimethylphenol Le silane, and dimethylphenyl silane and the like.

Examples of the organosilsesquioxane compound (C) having a group represented by the formula (3) include 1,3-bis (glycidyloxypropyl) -1,1-3,3-tetramethyldisiloxane. .
Examples of the organosilasesquioxane compound (C) having a group represented by the formula (4) include (3-ethyl-3-oxetanyl) methyloxypropylsilasesquioxane and [(3-ethyl-3-oxetanyl). ) Methyloxypropyl] methyl silasesquioxane.

  From the viewpoint of flatness and uniformity of the film obtained from the organic thin film transistor insulating layer material of the present invention, the weight average molecular weight in terms of polystyrene of the organosilasesquioxane compound (C) is preferably 300 to 1,000,000, more preferably 300 to 500,000. preferable.

<Compound capable of generating acid by irradiation of electromagnetic wave or electron beam, or action of heat (D)>
The organic thin film transistor insulating layer material of the present invention contains a compound (D) capable of generating an acid by the action of electromagnetic waves or electron beams, or heat.
Examples of the compound (D) include iodonium salts and sulfonium salts.

  Examples of the iodonium salt include diphenyl iodonium hexafluorophosphate, diphenyl iodonium hexafluoroantimonate, and tolylcumyl iodonium tetrakis (pentafluorophenyl) borate.

  Examples of the sulfonium salt include triphenylsulfonium phosphate, p- (phenylthio) phenyldiphenylsulfonium hexafluorophosphate, triphenylsulfonium hexafluoroantimonate, p- (phenylthio) phenyldiphenylsulfonium hexafluoroantimonate, 4,4′- Bis [di (β-hydroxyethoxy) phenylsulfonio] phenyl sulfide-bis-hexafluoroantimonate and 4- [4- (4-tert-butylbenzoyl) phenylthio] phenyl-di (4-methylphenyl) sulfonium Hexafluorophosphate is mentioned.

The compound (D) capable of generating an acid by the action of electromagnetic waves or electron beams, or heat can be used as a photocationic polymerization initiator or a thermal cationic polymerization initiator. Specific examples of the compound (D) used as the photocationic polymerization initiator include trade name Rhodosil 2074 (manufactured by Rhodia Japan), trade name Adekaoptoma-SP-150 (made by ADEKA), trade name Adekaoptomer SP-152 (manufactured by ADEKA Corporation), trade name ADEKA OPTOMA-SP-170 (manufactured by ADEKA Corporation), trade name ADEKA OPTOMA-SP-172 (manufactured by ADEKA Corporation), and the like. Moreover, the compound described in Unexamined-Japanese-Patent No. 9-118663 and the compound described in Unexamined-Japanese-Patent No. 2007-262401 can also be used as a photocationic polymerization initiator.
Specific examples of the compound (D) used as the thermal cationic polymerization initiator include trade name TA-100 (manufactured by San Apro Co., Ltd.), trade name TA-120 (manufactured by San Apro Co., Ltd.), and trade name TA-160. (San Apro Co., Ltd.).

<Organic thin film transistor insulating layer material>
The organic thin-film transistor insulating layer material of the present invention is a combination of a solvent for mixing and viscosity adjustment, a crosslinking agent used for crosslinking the polymer compound (A) containing a repeating unit having a cyclic ether structure, and the crosslinking agent. It may contain additives used. Examples of the solvent include ether solvents such as tetrahydrofuran and diethyl ether, aliphatic hydrocarbon solvents such as hexane, alicyclic hydrocarbon solvents such as cyclohexane, unsaturated hydrocarbon solvents such as pentene, and aromatic hydrocarbon solvents such as xylene. Ketone solvents such as acetone, acetate solvents such as butyl acetate, alcohol solvents such as isopropyl alcohol, halogen solvents such as chloroform, and mixed solvents of these solvents. Examples of the additive include a catalyst for accelerating a crosslinking reaction, a sensitizer, a leveling agent, and a viscosity modifier.

  The organic thin film transistor insulating layer material of the present invention is a composition used for forming an insulating layer contained in an organic thin film transistor. Among the insulating layers of organic thin film transistors, it is preferably used for forming a gate insulating layer. As the organic thin film transistor insulating layer material, an organic thin film transistor overcoat layer material and an organic thin film transistor gate insulating layer material are preferable, and an organic thin film transistor gate insulating layer material is more preferable.

<Organic thin film transistor>
FIG. 1 is a schematic cross-sectional view showing the structure of a bottom gate top contact organic thin film transistor according to an embodiment of the present invention. The organic thin film transistor includes a substrate 1, a gate electrode 2 formed on the substrate 1, a gate insulating layer 3 formed on the gate electrode 2, an organic semiconductor layer 4 formed on the gate insulating layer 3, A source electrode 5 and a drain electrode 6 formed on the organic semiconductor layer 4 with a channel portion interposed therebetween, and an overcoat layer 7 covering the entire element are provided.

  A bottom gate top contact type organic thin film transistor includes, for example, a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an organic semiconductor layer formed on the gate insulating layer, and a source electrode formed on the organic semiconductor layer. And it can manufacture by forming a drain electrode and forming an overcoat layer. The organic thin film transistor insulating layer material of the present invention is suitably used for forming a gate insulating layer as an organic thin film transistor gate insulating layer material. Moreover, it can also be used for forming an overcoat layer as an organic thin film transistor overcoat layer material.

  FIG. 2 is a schematic cross-sectional view showing the structure of a bottom gate bottom contact type organic thin film transistor which is an embodiment of the present invention. In this organic thin film transistor, a substrate 1, a gate electrode 2 formed on the substrate 1, a gate insulating layer 3 formed on the gate electrode 2, and a channel portion on the gate insulating layer 3 are formed. A source electrode 5 and a drain electrode 6, an organic semiconductor layer 4 formed on the source electrode 5 and the drain electrode 6, and an overcoat layer 7 covering the entire element are provided.

  A bottom-gate bottom-contact type organic thin film transistor includes, for example, a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, a source electrode and a drain electrode formed on the gate insulating layer, and a source electrode and a drain electrode It can be manufactured by forming an organic semiconductor layer thereon and forming an overcoat layer. The organic thin film transistor insulating layer material of the present invention is suitably used for forming a gate insulating layer as an organic thin film transistor gate insulating layer material. Moreover, it can also be used for forming an overcoat layer as an organic thin film transistor overcoat layer material.

  The formation of the gate insulating layer or overcoat layer can be carried out by polymerizing the polymer compound (A), novolac type epoxy resin (B), organosilsesquioxane compound (C), electromagnetic wave or electron beam irradiation, or heat. An insulating layer coating solution containing a compound (D) that can be generated and an organic solvent is prepared, the insulating layer coating solution is coated on a substrate to form a coating layer, the coating layer is dried, and then cured. By doing. Here, the “substrate” means a constituent member of the organic thin film transistor on which the organic thin film transistor insulating layer is disposed, and “dry” means an organic solvent contained in the applied insulating layer coating liquid. The “curing” means that the polymer compound (A), the novolac type epoxy resin (B), and the organosilsesquioxane compound (C) are crosslinked. Examples of the organic solvent used in the insulating layer coating liquid include polymer compound (A), novolac type epoxy resin (B), organosilsesquioxane compound (C), and irradiation with electromagnetic waves or electron beams, or by the action of heat. Although it will not specifically limit if it can dissolve the compound (D) which can generate an acid, Preferably, it is an organic solvent whose boiling point in a normal pressure is 100 to 200 degreeC. Examples of the organic solvent include 2-heptanone (boiling point 151 ° C.) and propylene glycol monomethyl ether acetate (boiling point 146 ° C.). A leveling agent, a surfactant, a curing catalyst, and the like can be added to the insulating layer coating solution as necessary.

  The insulating layer coating solution can be applied onto the substrate by a known method such as spin coating, die coater, screen printing, or ink jet.

The dried coating layer is then cured. Crosslinking of the polymer compound (A), the novolac epoxy resin (B) and the organosilsesquioxane compound (C) is performed, for example, by irradiating the coating layer with electromagnetic waves or electron beams. By irradiation with electromagnetic waves or electron beams, the compound (D) as a photoacid generator or the compound (D) as a photocation initiator is decomposed to produce an acid, and a polymer compound (A), a novolac epoxy resin ( The cyclic ether in B) and the organosilsesquioxane compound (C) is opened and polymerized.
Further, when the compound (D) which is a thermal acid generator and the compound (D) which is a thermal cationic polymerization initiator are used, the thermal acid generator and the thermal cationic polymerization initiator are decomposed by the action of heat, and the acid is generated. Then, the cyclic ether in the polymer compound (A), the novolac type epoxy resin (B) and the organosilsesquioxane compound (C) is opened and polymerized.

  In one embodiment of the method for forming an organic thin film transistor insulating layer of the present invention, a step of applying a liquid containing an organic thin film transistor insulating layer material on a base material to form a coating layer on the base material; Irradiating with an electron beam. When the polymer compound (A) has a first functional group, and the first functional group is a functional group capable of generating a second functional group capable of reacting with active hydrogen upon irradiation with electromagnetic waves, It is preferable to form an organic thin film transistor insulating layer by the forming method.

  Another aspect of the method for forming an organic thin film transistor insulating layer according to the present invention includes a step of applying a liquid containing an organic thin film transistor insulating layer material on a base material to form a coating layer on the base material; Or a step of irradiating with an electron beam. When the polymer compound (A) has a first functional group, and the first functional group is a functional group capable of generating a second functional group capable of reacting with active hydrogen by the action of heat, Preferably, the organic thin film transistor insulating layer is formed by the forming method, and the organic thin film transistor insulating layer is a step of applying a liquid containing an organic thin film transistor insulating layer material on a base material to form a coating layer on the base material; More preferably, the coating layer is formed by a forming method including a step of irradiating an electromagnetic wave or an electron beam to the coating layer; and a step of applying heat to the coating layer.

  When heat is applied to the coating layer, the coating layer is heated to a temperature of about 80 to 250 ° C., preferably about 100 to 230 ° C., and maintained for about 5 to 120 minutes, preferably about 10 to 60 minutes. If the heating temperature is too low or the heating time is too short, crosslinking of the organic thin film transistor insulating layer may be insufficient, and if the heating temperature is too high or the heating time is too long, the organic thin film transistor insulating layer may be damaged.

  When the coating layer is irradiated with electromagnetic waves, the irradiation conditions are adjusted in consideration of the degree of crosslinking and damage of the organic thin film transistor insulating layer. When heating is performed by applying a microwave, the application condition is adjusted in consideration of the cross-linking of the organic thin film transistor insulating layer and the degree of damage.

  The wavelength of the electromagnetic wave to be irradiated is preferably 450 nm or less, more preferably 150 to 410 nm. If the wavelength of the electromagnetic wave to be irradiated exceeds 450 nm, the crosslinking of the cyclic ether may be insufficient. As electromagnetic waves, ultraviolet rays are preferable.

  Irradiation with ultraviolet rays can be performed using, for example, an exposure apparatus used for manufacturing a semiconductor or a UV lamp used for curing a UV curable resin. The electron beam irradiation can be performed using, for example, a micro electron beam irradiation tube. Heating can be performed using a heater, an oven, or the like.

  A self-assembled monolayer may be formed on the gate insulating layer. The self-assembled monolayer can be formed, for example, by treating the gate insulating layer with a solution obtained by dissolving 1 to 10% by weight of an alkylchlorosilane compound or an alkylalkoxysilane compound in an organic solvent.

  Examples of alkylchlorosilane compounds include methyltrichlorosilane, ethyltrichlorosilane, butyltrichlorosilane, decyltrichlorosilane, and octadecyltrichlorosilane.

  Examples of alkylalkoxysilane compounds include methyltrimethoxysilane, ethyltrimethoxysilane, butyltrimethoxysilane, decyltrimethoxysilane, and octadecyltrimethoxysilane.

  The substrate 1, the gate electrode 2, the source electrode 5, the drain electrode 6 and the organic semiconductor layer 4 may be configured by materials and methods that are usually used. Resin or plastic plates, films, glass plates, silicon plates, etc. are used as the material of the substrate. As the electrode material, chromium, gold, silver, aluminum, molybdenum, or the like is used, and the electrode is formed by a known method such as a vapor deposition method, a sputtering method, a printing method, or an ink jet method.

  As the organic semiconductor for forming the organic semiconductor layer 4, a π-conjugated polymer is used. For example, polypyrrole and derivatives thereof, polythiophene and derivatives thereof, polyaniline and derivatives thereof, polyallylamine and derivatives thereof, polyfluorene and derivatives thereof, poly Carbazole and derivatives thereof, polyindole and derivatives thereof, poly (p-phenylene vinylene) and derivatives thereof can be used. In addition, low molecular weight substances that dissolve in organic solvents, such as polycyclic aromatic derivatives such as pentacene, phthalocyanine derivatives, perylene derivatives, tetrathiafulvalene derivatives, tetracyanoquinodimethane derivatives, fullerenes and their derivatives, carbon nanotubes and their Derivatives can also be used. Specifically, 2,1,3-benzothiadiazole-4,7-di (ethylene boronate) and 2,6-dibromo- (4,4-bis-hexadecanyl-4H-cyclopenta [2,1-b Condensate with 3,4-b ′]-dithiophene, 9,9-di-n-octylfluorene-2,7-di (ethylene boronate) and 5,5′-dibromo-2,2′-; Examples thereof include condensates with bithiophene.

  The organic semiconductor layer can be formed, for example, by adding an organic semiconductor coating solution by adding a solvent or the like if necessary for the organic semiconductor, and coating the organic semiconductor coating solution on the gate insulating layer to form a coating film. It is performed by drying the resulting coating film.

The solvent used in the organic semiconductor coating solution is not particularly limited as long as it dissolves or disperses the organic semiconductor, but is preferably a solvent having a boiling point of 50 ° C. to 200 ° C. at normal pressure.
Examples of the solvent include chloroform, toluene, anisole, 2-heptanone, and propylene glycol monomethyl ether acetate. The organic semiconductor coating liquid can be applied onto the gate insulating layer by a known method such as spin coating, die coater, screen printing, and ink jet as in the case of the insulating layer coating liquid.

  The organic thin film transistor of the present invention may be coated with an overcoat material for the purpose of protecting the organic thin film transistor and enhancing the smoothness of the surface.

  The organic thin film transistor insulating layer manufactured using the organic thin film transistor insulating layer material of the present invention can be laminated with a flat film and the like, and a laminated structure can be easily formed. Moreover, an organic electroluminescent element can be suitably mounted on the organic thin film transistor insulating layer.

  By using the organic thin film transistor insulating layer material of the present invention, a display member having an organic thin film transistor can be preferably produced. A display provided with a display member can be manufactured using the display member having the organic thin film transistor.

  The organic thin film transistor insulating layer material of the present invention can also be used for forming a layer included in a transistor other than an insulating layer and a layer included in an organic electroluminescence element.

  EXAMPLES Hereinafter, although an Example demonstrates this invention, it cannot be overemphasized that this invention is not limited by an Example.

化合物（１−Ａ） Synthesis example 1
(Synthesis of Compound 1-A)
In a 300 ml three-necked flask equipped with a three-way cock and a septum, 33.29 g of 3-ethyl-3-hydroxymethyloxetane (manufactured by Toagosei Co., Ltd., trade name: OXT-101), triethylamine (Wako Pure Chemical Industries, Ltd.) 48.31 g (manufactured by company), 200 ml of dehydrated tetrahydrofuran (manufactured by Wako Pure Chemical Industries, Ltd.) and a stirrer were placed, and the air inside the flask was replaced with nitrogen. The flask was immersed in an ice bath, and 25.00 g of methacryloyl chloride was slowly added dropwise using a gas tight syringe while stirring the reaction mixture by stirring the stirring bar with a magnetic stirrer. After completion of the dropwise addition, the mixture was further stirred in an ice bath for 2 hours, and then stirred overnight at room temperature for reaction. After completion of the reaction, the produced triethylamine hydrochloride was filtered off, the filtrate was transferred to a 500 ml separatory funnel, 200 ml of diethyl ether was added to the filtrate, the organic layer was washed with 100 ml of ion-exchanged water, and the organic layer was separated. Liquid. After the organic layer was washed with water three times, the organic layer was separated and dried over anhydrous magnesium sulfate. After anhydrous magnesium sulfate was filtered off, the filtrate was concentrated using a rotary evaporator to obtain compound (1-A) as a light brown liquid. The yield of compound (1-A) was 29.3 g, and the yield was 61.3%.

Compound (1-A)

高分子化合物１ (Synthesis of polymer compound 1)
In a 50 ml pressure vessel (ACE GLASS), 9.00 g of the compound (1-A), 1.69 g of styrene (manufactured by Wako Pure Chemical Industries, Ltd.), and 0.001 of acrylonitrile (manufactured by Wako Pure Chemical Industries, Ltd.). 86 g, 0.06 g of 2,2′-azobis (2-methylpropionitrile) and 17.42 g of propylene glycol monomethyl ether acetate (manufactured by Tokyo Chemical Industry Co., Ltd.) were put in, bubbled with argon gas, and then sealed. Polymerization was carried out in an oil bath at 80 ° C. for 5 hours to obtain a viscous propylene glycol monomethyl ether acetate solution in which the polymer compound 1 was dissolved. The high molecular compound 1 has the following repeating unit. The numbers in parentheses indicate the mole fraction of repeating units.

Polymer compound 1

  The weight average molecular weight calculated | required from the standard polystyrene of the obtained high molecular compound 1 was 309000 (GPC made from Shimadzu, one Tskel super HM-H + one Tskel super H2000, a mobile phase = THF).

高分子化合物２ Synthesis example 2
(Synthesis of polymer compound 2)
1.88 g of 2,1,3-benzothiadiazole-4,7-di (ethylene boronate) and 2,6-dibromo- (4,4-bis-hexadecanyl-4H-cyclopenta [2,1-b; In an 80 mL toluene solution containing 3.81 g of 3,4-b ′]-dithiophene, 0.75 g of tetrakis (triphenylphosphine) palladium, methyltrioctylammonium chloride (manufactured by Sigma-Aldrich, trade name) in a nitrogen atmosphere 1.0 g of “Aliquat 336” (registered trademark)) and 24 mL of 2M aqueous sodium carbonate solution were added, and the resulting mixture was stirred vigorously and heated to reflux for 24 hours. The mixture was poured into 500 mL of acetone to precipitate a fibrous yellow polymer, which was collected by filtration and collected in acetone. And then dried overnight in a vacuum oven at 60 ° C. The resulting polymer is referred to as polymer compound 2. Polymer compound 2 is represented by the following structure, where n represents the number of repeating units. Yes.

Polymer compound 2

  The weight average molecular weight calculated | required from the standard polystyrene of the high molecular compound 2 was 32000 (Shimadzu GPC, 1 Tskel super HM-H + 1 Tskel super H2000, mobile phase = THF).

（Ｉ） Example 1
(Production of organic thin film transistor insulating layer material and field effect organic thin film transistor)
In a 20 ml sample bottle, 0.82 g of the propylene glycol monomethyl ether acetate solution of polymer compound 1 obtained in Synthesis Example 1 and 1.15 g of cresol novolac type epoxy resin YDCN-704 (manufactured by Toto Kasei Co., Ltd.), 0.14 g of a silsesquioxane compound OX-SQ ME20 (manufactured by Toagosei Co., Ltd.) containing the group represented by I), and TA-100 (manufactured by San Apro Co., Ltd.), which is a thermal cationic polymerization initiator, is set to 0.1. 047 g and 8.12 g of propylene glycol monomethyl ether acetate were added and dissolved while stirring to prepare a coating solution 1 as an organic thin film transistor insulating layer material.

(I)

  The obtained coating solution 1 is filtered using a membrane filter having a pore diameter of 0.2 μm, spin-coated on a glass substrate with a chromium electrode, and then baked on a hot plate at 120 ° C. for 5 minutes to form a gate insulating layer. Obtained.

  Next, the polymer compound 2 was dissolved in xylene to prepare a solution having a concentration of the polymer compound 2 of 0.5% by weight, and the solution was filtered through a membrane filter to prepare a coating solution 2.

  The obtained coating solution 2 was applied onto the gate insulating layer by a spin coating method to form an active layer having a thickness of about 30 nm. Next, a source electrode and a drain electrode were formed on the active layer by a vacuum vapor deposition method using a metal mask to produce a field effect organic thin film transistor. The source electrode and the drain electrode had a structure in which molybdenum oxide and gold were laminated from the active layer side, the channel length was 20 μm, and the channel width was 2 mm.

<Evaluation of transistor characteristics>
With respect to the field effect organic thin film transistor, the transistor characteristics were changed to a vacuum probe (BCT22MDC-5-HT-SCU; under the condition that the gate voltage Vg was changed to 20 to -40 V and the source-drain voltage Vsd was changed to 0 to -40 V. Nagase Electronic Equipments Service Co., LTD). The results are shown in Table 1.

  The hysteresis of the field effect organic thin film transistor is that the source-drain voltage Vsd is −40V, and the threshold voltage Vth1 and the gate voltage Vg when the gate voltage Vg is changed from 20V to −40V are changed from −40V to 20V. The difference from the threshold voltage Vth2 is shown.

<Evaluation of electrical characteristics>
The coating solution 1 was filtered using a membrane filter having a pore size of 0.2 μm, spin-coated on a glass substrate with a chromium electrode, and then baked on a hot plate at 120 ° C. for 5 minutes to obtain a gate insulating layer. .

  Next, on the obtained gate insulating layer, aluminum was vapor-deposited using a metal mask, an aluminum electrode was formed, and an MIM element was produced.

About the produced MIM element, an electric field of 1 MV / cm was applied between the electrodes, and the leakage current was measured using a vacuum probe (BCT22MDC-5-HT-SCU; manufactured by Nagase Electronic Equipments Service Co., LTD). The leakage current was 2.1 × 10 ⁻⁹ A / cm ² .

Example 2
(Manufacture of field-effect organic thin-film transistors)
The coating solution 1 was filtered using a membrane filter having a pore size of 0.2 μm, spin-coated on a glass substrate with a chromium electrode, and then baked on a hot plate at 120 ° C. for 5 minutes to obtain a gate insulating layer. .
An alloy of silver, palladium and copper (APC) was deposited to a thickness of about 100 nm on the gate insulating layer using a vacuum sputtering apparatus (STL-6421, manufactured by Shinko Seiki Co., Ltd.). Thereafter, all APCs on the gate insulating layer were removed by immersion in an APC etching solution (SEA-5, manufactured by Kanto Chemical Co., Inc.). Next, the coating solution 2 was applied on the gate insulating layer after the APC was removed by spin coating to form an active layer having a thickness of about 30 nm. Next, a source electrode and a drain electrode were formed on the active layer by a vacuum evaporation method using a metal mask, and a field effect organic thin film transistor including a gate insulating layer exposed to APC vapor was produced. The source electrode and the drain electrode had a structure in which molybdenum oxide and gold were laminated from the active layer side, the channel length was 20 μm, and the channel width was 2 mm. The transistor characteristics of the field effect organic thin film transistor were measured by the same method as in Example 1. The results are shown in Table 1.

Comparative Example 1
(Production of organic thin film transistor insulating layer material and field effect organic thin film transistor)
A coating liquid 3 which is an organic thin film transistor insulating layer material was prepared in the same manner as in Example 1 except that the silsesquioxane compound SQ-OX ME20 was not added. Thereafter, a field effect organic thin film transistor was prepared in the same manner as in Example 2 except that the coating liquid 3 was used instead of the coating liquid 1, and the transistor characteristics of the obtained field effect organic thin film transistor were measured. The results are shown in Table 1.

<Evaluation of electrical characteristics>
An MIM element was produced in the same manner as in Example 1 except that the coating liquid 3 was used instead of the coating liquid 1, and the leakage current was measured. The leakage current was 2.3 × 10 ⁻⁹ A / cm ² .

Comparative Example 2
(Production of organic thin film transistor insulating layer material and field effect organic thin film transistor)
Coating liquid 4 which is an organic thin film transistor insulating layer material was prepared in the same manner as in Example 1 except that TA-100 (manufactured by San Apro Co., Ltd.) which is a thermal cationic polymerization initiator was not added. Thereafter, the coating solution 2 was applied onto the gate insulating layer in the same manner as in Example 2 except that the coating solution 4 was used instead of the coating solution 1. However, when the coating liquid 2 was applied on the gate insulating layer, the gate insulating layer was dissolved and a field effect organic thin film transistor could not be produced.

Comparative Example 3
(Production of organic thin film transistor insulating layer material and field effect organic thin film transistor)
A coating liquid 5 as an organic thin film transistor insulating layer material was prepared in the same manner as in Example 1 except that the propylene glycol monomethyl ether acetate solution of the polymer compound 1 obtained in Synthesis Example 1 was not added. Thereafter, the coating solution 5 was applied onto a glass substrate with a chromium electrode and baked on a hot plate at 120 ° C. for 5 minutes. As a result, aggregation occurred and a uniform gate insulating layer was not obtained, and a field effect organic thin film transistor was manufactured. It could not be produced.

1 ... substrate,
2 ... Gate electrode,
3 ... gate insulating layer,
4 ... Organic semiconductor layer,
5 ... Source electrode,
6 ... drain electrode,
7: Overcoat layer.

Claims (10)

A polymer compound (A) containing a repeating unit having a cyclic ether structure;
Novolac type epoxy resin (B),
An organosilsesquioxane compound (C) having at least one group selected from the group consisting of a group represented by formula (3) and a group represented by formula (4);
An organic thin film transistor insulating layer material containing a compound (D) capable of generating an acid by the action of electromagnetic waves or electron beams, or heat.

(3)
[In formula, R < ¹¹ >, R < ¹² > and R < ¹³ > represent a hydrogen atom or a C1-C20 organic group each independently. ]

(4)
[In formula, R <^14> , R <^15> , R <^16> , R <^17> and R < ¹⁸ > represent a hydrogen atom or a C1-C20 organic group each independently. ] The organic thin film transistor insulating layer material according to claim 1, wherein the repeating unit having a cyclic ether structure is a repeating unit represented by the formula (1) or a repeating unit represented by the formula (2).

(1)
[Wherein, R ¹ represents a hydrogen atom or a methyl group. R ² , R ³ , and R ⁴ each independently represent a hydrogen atom or an organic group having 1 to 20 carbon atoms. R ^A represents a divalent group. a1 represents an integer of 0 or 1. ]

(2)
[Wherein, R ⁵ represents a hydrogen atom or a methyl group. R ⁶ , R ⁷ , R ⁸ , R ⁹ and R ¹⁰ each independently represent a hydrogen atom or an organic group having 1 to 20 carbon atoms. R ^B represents a divalent group. b1 represents an integer of 0 or 1. ] The organic thin-film transistor insulating layer material according to claim 1 or 2, wherein the polymer compound (A) further contains a repeating unit containing the following first functional group.

First functional group: a functional group capable of generating a second functional group capable of reacting with active hydrogen by the irradiation of electromagnetic waves or the action of heat.   The organic thin film transistor insulating layer material according to claim 3, wherein the first functional group is an isocyanato group blocked with a blocking agent or an isothiocyanato group blocked with a blocking agent. The organic thin film transistor insulating layer material according to claim 4, wherein the isocyanato group blocked with the blocking agent and the isothiocyanato group blocked with the blocking agent are groups represented by the formula (5).

(5)
Wherein, Xa represents an oxygen atom or a sulfur ^{atom, R 19} and ^{R 20} each independently represent a hydrogen atom or an organic group having 1 to 20 carbon atoms. ] The organic thin-film transistor insulating layer material according to claim 4, wherein the isocyanato group blocked with the blocking agent and the isothiocyanato group blocked with the blocking agent are groups represented by the formula (6).

(6)
[Wherein, Xb represents an oxygen atom or a sulfur atom, and R ²¹ , R ²² , and R ²³ each independently represents a hydrogen atom or an organic group having 1 to 20 carbon atoms. ]   The organic thin-film transistor which has the organic thin-film transistor insulating layer formed using the organic thin-film transistor insulating-layer material as described in any one of Claims 1-6.   The organic thin film transistor according to claim 7, wherein the organic thin film transistor insulating layer is a gate insulating layer.   The display member containing the organic thin-film transistor of Claim 7 or 8.   A display comprising the display member according to claim 9.

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