JP2013258020A - Method for manufacturing organic el display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing an organic EL display device which allows an organic EL display device to be manufactured without interfering with the function of a lower electrode of injecting a carrier.SOLUTION: The method for manufacturing an organic EL display device comprises: a patterning member-forming step for forming, on a substrate, a patterning member having a patterning shape which does not cover a predetermined contact part; a lower electrode-forming step for growing a conductive film made of an electrode material so as to cover at least the area of a part of the patterning member and the predetermined contact part; an organic compound layer-forming step for growing a film made of an organic material on the lower electrode; a patterning member-removing step for removing the patterning member together with the conductive film formed on the patterning member and the organic compound layer; and an upper electrode-forming step for forming an upper electrode.

Description

  The present invention relates to a method for manufacturing an organic EL display device.

  The organic EL display device is a display device having a plurality of organic EL elements each having an anode, a cathode, and an organic compound layer including at least a light-emitting layer provided between the anode and the cathode. The organic light emitting element emits light when the excitons generated when the holes injected from the anode side and the electrons injected from the cathode side recombine in the light emitting layer return to the ground state. By the way, the organic compound layer which comprises an organic light emitting element is a laminated body which consists of a single layer or several layers which have a light emitting layer at least. Here, when the organic compound layer is a laminate composed of a plurality of layers, a hole transport layer, an electron transport layer, and the like are appropriately formed in addition to the light emitting layer.

  There are many methods for manufacturing an organic EL display device, and a vacuum deposition method is known as one of the manufacturing methods. The vacuum deposition method is an organic compound layer formed by sequentially vaporizing (sublimating) a material (vapor deposition material) that is a constituent material of an organic EL element, and then forming a thin film on a substrate that is a base material of an organic EL display device. It is the method of forming the structural member of organic EL elements, such as. At this time, the vapor deposition material is first put in a crucible and vaporized by being heated to a temperature equal to or higher than the vaporization temperature in a vacuum apparatus during film formation. A thin film is formed by the vapor generated by the vaporization coming into contact with the substrate or the like.

  By the way, when manufacturing an organic EL display device by a vacuum vapor deposition method, generally, a film forming method for forming a film while patterning an organic compound layer in a predetermined shape using a metal mask is performed. In particular, in the case of manufacturing an organic EL display device that emits full color light such as red, green, and blue, a film forming method (patterning method) using a metal mask when forming each light emitting layer of red, green, and blue in a predetermined region. ) Has been implemented. However, the patterning method using the metal mask has a limit in definition because it becomes difficult to make the opening widths equal to each other when the opening width of the metal mask is narrowed.

  On the other hand, several patterning methods that do not use a metal mask have been proposed. For example, there is a photolithography process (pattern formation process using photolithography) proposed in Patent Document 1 and Patent Document 2. Here, when the photolithography process is used, an etching step for removing an unnecessary organic compound layer is included at least once. Patent Document 1 employs a light irradiation dry etching method in which patterning is performed while irradiating light during an etching process. On the other hand, in Patent Document 2, a dry etching method is employed in the etching process. In any of the methods, an unnecessary organic compound layer is removed during the etching process, and an electrode (lower electrode) previously disposed under the removed organic compound layer is exposed.

JP 2000-36385 A Japanese Patent No. 3839276

  However, in the case of patterning the organic compound layer by dry etching, when the lower electrode is exposed, a residue of the organic compound layer is generated at the interface between the organic compound layer and the lower electrode, and this residue is the lower part as foreign matter. May be present on the electrode surface. In addition, during dry etching, the lower electrode is exposed to an etching environment, and the lower electrode surface may be oxidized or impurities may be generated on the lower electrode surface, thereby contaminating the lower electrode surface. Further, when the lower electrode is exposed to the atmosphere after dry etching, the lower electrode may be damaged due to oxidation of the surface. As described above, when dry etching is performed, the surface of the lower electrode is oxidized, contaminated by impurities, etc., or foreign matter is generated, thereby fulfilling the carrier injection function that the lower electrode should originally have. There was a case that disappeared. This is one of the problems when using a photolithography process as a manufacturing process of an organic EL display device.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to make it possible to manufacture an organic EL display device without impairing the carrier injection function of the lower electrode. It is in providing the manufacturing method of.

The manufacturing method of the organic EL display device of the present invention includes a substrate and a plurality of organic EL elements provided on the substrate,
A drive circuit is provided inside the substrate,
The organic EL element comprises a lower electrode provided on a substrate, an organic compound layer formed on the lower electrode, and an upper electrode formed on the organic compound layer,
In the method of manufacturing an organic EL display device in which the drive circuit and the lower electrode are electrically connected by a contact portion provided in the substrate.
A patterning member forming step of forming a patterning member having a pattern shape not covering a predetermined contact portion on the substrate;
A lower electrode forming step of forming a conductive film made of an electrode material so as to cover at least a part of the region on the patterning member and the predetermined contact portion;
An organic compound layer forming step of forming a film made of an organic material on the lower electrode;
Removing the patterning member together with the conductive film and the organic compound layer formed on the patterning member;
And an upper electrode forming step for forming the upper electrode.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of an organic electroluminescence display which makes it possible to manufacture an organic electroluminescence display without impairing the carrier injection function of a lower electrode can be provided.

  That is, according to the present invention, when an organic compound layer having a desired pattern shape is formed using a photolithography process, the lower electrode provided below the organic compound layer is exposed to the etching environment or the atmosphere in the dry etching process. It will never be. For this reason, the surface of the lower electrode can be prevented from being contaminated by oxidation, generation of impurities, or the like, or foreign matter or the like can be generated on the surface. Therefore, an organic EL display device can be manufactured without impairing the characteristics of the lower electrode. Moreover, in the manufacturing method of this invention, the lower electrode and organic compound layer which are provided in a predetermined area | region can be formed using the same patterning member. For this reason, an organic EL display device having a high pixel aperture ratio, which cannot be achieved by patterning using a conventional metal mask, can be manufactured due to problems such as mask alignment accuracy and deposition deposition accuracy.

It is a cross-sectional schematic diagram which shows 1st embodiment in the manufacturing method of the organic electroluminescence display of this invention. It is a cross-sectional schematic diagram which shows 1st embodiment in the manufacturing method of the organic electroluminescence display of this invention. It is a cross-sectional schematic diagram which shows 2nd embodiment in the manufacturing method of the organic electroluminescence display of this invention. It is a cross-sectional schematic diagram which shows 2nd embodiment in the manufacturing method of the organic electroluminescence display of this invention. It is a cross-sectional schematic diagram which shows 2nd embodiment in the manufacturing method of the organic electroluminescence display of this invention. It is a cross-sectional schematic diagram which shows 2nd embodiment in the manufacturing method of the organic electroluminescence display of this invention. It is a cross-sectional schematic diagram which shows the mode of film-forming of the lower electrode and organic compound layer in the process from the formation process of a patterning member to the formation process of an organic compound layer. FIG. 3 is a schematic cross-sectional view showing the manufacturing process of the organic EL display device in Example 1. FIG. 3 is a schematic cross-sectional view showing the manufacturing process of the organic EL display device in Example 1. FIG. 3 is a schematic cross-sectional view showing the manufacturing process of the organic EL display device in Example 1. FIG. 3 is a schematic cross-sectional view showing the manufacturing process of the organic EL display device in Example 1. FIG. 3 is a schematic cross-sectional view showing the manufacturing process of the organic EL display device in Example 1.

  The manufacturing method of the present invention is a method for manufacturing an organic EL display device having a substrate and a plurality of organic EL elements provided on the substrate.

  Here, a drive circuit is provided inside the substrate.

  On the other hand, the organic EL element is an electronic element composed of a lower electrode provided on a substrate, an organic compound layer formed on the lower electrode, and an upper electrode formed on the organic compound layer.

  The drive circuit and the lower electrode are electrically connected by a contact portion provided in the substrate.

Here, the manufacturing method of the present invention includes the following steps (A1) to (A5).
(A1) A patterning member forming step (A2) of forming a patterning member having a pattern shape not covering the predetermined contact portion on the substrate (A2) at least a part of the region on the patterning member, and the predetermined contact portion. Step of forming lower electrode for forming conductive film made of electrode material so as to cover (A3) Step of forming organic compound layer for forming film made of organic material on lower electrode (A4) Patterning member for patterning Patterning member removing step for removing the conductive film and the organic compound layer formed on the member (A5) Upper electrode forming step for forming the upper electrode

When a display device having a plurality of types of pixels with different emission colors is manufactured by the manufacturing method of the present invention, the above steps (A1) to (A4) are repeated as appropriate depending on the type of the pixels. In the case of manufacturing an organic EL display device having a plurality of types of pixels, the following steps (i) and (ii) may be performed prior to the step (A1) in the present invention.
(I) First lower electrode forming step (ii) First organic compound layer forming step

  Here, the first lower electrode and the first organic compound layer are a lower electrode and an organic compound layer constituting the first organic light-emitting element formed in the first predetermined region, respectively.

In the present invention, when the first lower electrode is formed on the substrate in advance, specific manufacturing processes include the following manufacturing processes (B1) to (B7). Here, in the case of manufacturing a display device having three or more types of pixels based on the manufacturing process having the following (B1) to (B7), the above steps (B3) to (B6) are repeated as appropriate according to the type of pixel. Do.
(B1) forming the first lower electrode on the substrate, forming the first lower electrode (B2) forming the first organic compound layer on the substrate, forming the first organic compound layer (B3) Patterning one organic compound layer to form a patterning member having a pattern shape not covering the second contact portion on the substrate (B4) forming a second lower electrode on the second contact portion; Step of forming second lower electrode (B5) Step of forming second organic compound layer on second lower electrode (B6) Step of removing patterning member to remove patterning member (B7) First Upper electrode process for forming an electrode layer that also serves as the upper electrode and the second upper electrode

  The display device manufactured in the steps (B1) to (B7) includes at least two types of organic EL elements, that is, a first organic EL element and a second organic EL element. Here, the first organic EL element includes a first lower electrode provided on the substrate, a first organic compound layer formed on the first lower electrode, and a first organic compound layer formed on the first organic compound layer. An organic EL element comprising an upper electrode. The second organic EL element includes a second lower electrode provided on the substrate, a second organic compound layer formed on the second lower electrode, a second upper electrode formed on the second organic compound layer, It is an organic EL element consisting of In addition, the lower electrode (first lower electrode, second lower electrode) included in each organic EL element is an electrode formed individually. The drive circuit and the first lower electrode are electrically connected by a first contact portion provided in the substrate. Further, the drive circuit and the second lower electrode are electrically connected by a second contact portion provided in the substrate.

  Hereinafter, the present invention will be described with reference to the drawings. However, the items described below are merely examples of embodiments of the present invention, and the present invention is not limited to these embodiments.

(1) First Embodiment FIG. 1 is a schematic cross-sectional view showing a first embodiment in the method for producing an organic EL display device of the present invention. Hereinafter, the manufacturing process of this embodiment will be described with reference to FIG.

(1-1) Substrate (FIG. 1 (a1))
First, a substrate 10 provided with a contact portion 11 is manufactured as a substrate (FIG. 1 (a1)). As a material of the substrate 10, glass, a film made of a polymer material, a Si wafer, or the like can be used. The material of the contact portion 11 is preferably a metal that can make ohmic contact (electrical connection) with the lower electrode 31 formed in a later step. The contact portion 11 is connected to a circuit (not shown) for driving an organic EL display device provided in the substrate 10 in advance. The shape of the contact portion 11 is not particularly limited as long as it can be electrically connected to a lower electrode 31 described later.

(1-2) Release layer forming step (FIG. 1 (a2))
Next, the peeling layer 21 is formed on the substrate 10 (FIG. 1 (a2)). The release layer 21 is formed to lift off the lower electrode 31 formed in a region other than the predetermined region in a later process. The release layer 21 is preferably made of a material that dissolves in a solvent such as water. For example, LiF, polyvinyl pyrrolidone, polyvinyl alcohol, or the like is suitably selected. However, the present invention is not limited to this as long as the layer dissolved in the predetermined solvent and formed on the release layer can be lifted off efficiently.

  When the release layer 21 is formed, a spin coating method, a slit coating method, an ink jet method, or the like can be used, but is not limited thereto.

  In addition, the layer provided on the peeling layer 21 can be removed by immersing it in a predetermined solvent together with the substrate 10 in the patterning member removing step described later.

(1-3) Resist layer forming step (FIG. 1 (a3))
Next, a resist layer 22 (photoresist layer) is formed on the release layer 21 (FIG. 1 (a3)). The resist layer 22 is preferably a positive photoresist in consideration of the influence on the lower layer during exposure, but is not limited thereto.

  When the resist layer 22 is formed, a spin coating method, a slit coating method, an ink jet method, or the like can be used, but is not limited thereto.

  A protective layer (not shown) for protecting the peeling layer 21 and the like can be provided between the peeling layer 21 and the resist layer 22. Specifically, when the release layer 21 is affected by the materials (solvent, solute) used when forming the resist layer 22, a protective layer is provided so as not to damage the release layer 21. Thus, the resist layer 22 can be formed uniformly. As a constituent material of the protective layer, a material that can be processed and removed by dry etching, for example, an inorganic material such as SiN is preferable. Moreover, when forming a protective layer, CVD method etc. can be used, but it is not limited to this.

(1-4) Development processing step (FIG. 1 (a4))
Next, the resist layer 22 provided in the region where the pixel 30 is provided is selectively exposed and developed to remove the resist layer 22 in the region where the organic EL element on the contact portion 11a is provided (FIG. 1 (a4)). In addition, a well-known method can be employ | adopted as a method utilized when exposing the resist layer 22 or performing a development process.

(1-5) Release layer processing step (FIG. 1 (a5))
Next, using the remaining resist layer 22 as a mask, the release layer 21 is processed by dry etching (FIG. 1 (a5)). By processing the peeling layer 21 by dry etching, the surface layer of the contact portion 11 is exposed. Moreover, the area | region which provides an organic EL element in the board | substrate 10 appears. When performing the dry etching process, a reactive gas capable of efficiently etching the constituent material is appropriately selected according to the constituent material of the release layer 21. For example, when the release layer 21 is formed using an organic compound, O ₂ gas or the like can be used as a reaction gas.

  In the present invention, the steps from the release layer forming step (step (1-2)) to the release layer processing step (step (1-5)) are collectively referred to as a patterning member forming step. Can do. That is, the patterning member 20 which has an opening part in the area | region which provides the pixel 30 which has an organic EL element is formed by performing the process from a process (1-2) to a process (1-5).

(1-6) Lower electrode formation step (FIG. 1 (a6))
Next, the lower electrode 31 is formed on the contact portion 11 using the patterning member 20 formed of the release layer 21 and the resist layer 22 formed in the dry etching process. In addition, when the drive circuit connected to the contact portion 11 is provided for each subpixel, a concave and convex shape such as a groove is formed in a predetermined region of the substrate 10 so that the lower electrode 31 is patterned in units of subpixels. It is preferable to provide a member (not shown).

  In the present invention, the constituent material of the lower electrode 31 is not particularly limited. In the case of forming a top emission type organic EL display device, a material (a metal material such as Al) that efficiently reflects at least light having a specific wavelength emitted from an organic compound layer described later is preferable. On the other hand, when forming a bottom emission type organic EL display device, a material (transparent conductive material such as ITO) that efficiently transmits light of a specific wavelength emitted from at least an organic compound layer is preferable.

  In addition, when forming the lower electrode 31, when the ohmic contact (electrical connection) is difficult to take between the lower electrode 31 and the surface of the contact part 11, the process demonstrated below is performed. That is, after forming the release layer, before forming the lower electrode, the oxide film that may exist on the surface of the contact portion 11 may be removed in advance by Ar sputtering or the like.

  When forming the lower electrode 31, using a vacuum deposition method in which the straightness of the material at the time of film formation is high, the amount of film deposited on the side wall of the patterning member 20 is reduced, and patterning can be easily performed. Yes, but not limited to this.

(1-7) Step of forming organic compound layer (FIG. 1 (a7))
Next, an organic compound layer 32 including a light emitting layer having a light emitting material is formed on the lower electrode 31 (FIG. 1 (a7)). It is preferable to form the organic compound layer 32 continuously with the lower electrode 31 because the probability that the surface of the lower electrode 31 is contaminated by oxidation or the like, or foreign matter or the like is generated can be reduced. In the present invention, continuously forming means that the lower electrode 31 and the organic compound layer 32 are formed in the same film forming apparatus.

  The organic compound layer 32 has a laminated structure including one or more functional layers including at least a light emitting layer. Although it is preferably a laminated structure composed of a plurality of functional layers, it is not limited to this. When the organic compound layer 32 has a laminated structure including a plurality of functional layers, a hole transport layer, an electron transport layer, or the like can be employed as the functional layer.

  As a constituent material of the light emitting layer, a metal complex (aluminum complex, iridium complex) material or the like can be used.

  As a constituent material of the hole transport layer, a phthalocyanine-based material, a triphenyldiamine-based material, or the like can be used.

  As a constituent material of the electron transport layer, an oxazole derivative, a triazole derivative, or the like can be used.

  However, in the present invention, the constituent materials of the layers included in the organic compound layer 32 are not limited to the materials described above.

  When forming the organic compound layer 32, it is preferable to use a vacuum vapor deposition method in which the straightness of the material during film formation is high, like the lower electrode 31. This is because the amount of film deposited on the side wall of the patterning member 20 is reduced, the patterning can be easily performed, and it can be formed in the same vacuum atmosphere as the formation of the lower electrode 31. However, if the organic compound layer 32 can be formed in an environment that can reduce the probability that the lower electrode 31 is contaminated on the surface due to oxidation or generation of impurities, or foreign matter is generated, the organic compound layer 32 can be formed. The formation method of the layer layer 32 is not limited to the vacuum evaporation method.

(1-8) Sacrificial layer formation step (FIG. 1 (a8))
Next, a sacrificial layer 33 is formed on the organic compound layer 32 (FIG. 1 (a8)). The sacrificial layer 33 is a member provided to protect the organic compound layer 32 in the peeling layer removing step described later. The sacrificial layer 33 is preferably a thin film that functions as a constituent member of the organic EL element, and the material is not particularly limited as long as it is insoluble in the solvent used when the release layer 21 is removed. For example, when a material (water-soluble inorganic material or organic material) that can be removed by washing is used as the constituent material of the release layer 21, the constituent material of the sacrificial layer 33 may be a material that is insoluble in water.

  When the sacrificial layer 33 is formed, a vacuum deposition method can be used, but is not limited thereto.

(1-9) Patterning member removal step (FIGS. 1 (a9) and (a10))
Next, the substrate 10 is immersed in a specific solvent, the peeling layer 21 formed on the substrate 10 is dissolved, and the patterning member 20 and the thin film provided on the patterning member 20 are collectively removed ( FIG. 1 (a9), (a10)).

  At this time, the organic compound layer 32 is protected from the solvent that dissolves the release layer 21 by the sacrificial layer 33. Next, after removing the release layer 21, the sacrificial layer 33 is removed by dipping in a specific solvent. At this time, the organic compound layer 32 is protected from the solvent that dissolves the sacrificial layer 33 by the uppermost layer (uppermost layer) of the organic compound layer 32. Here, the constituent material of the sacrificial layer 33 may be a material having a higher wet etching rate than the constituent material of the uppermost layer of the organic compound layer 32.

(1-10) Common layer forming step (FIG. 1 (a11))
Next, after removing the sacrificial layer 33, the common layer 34 (common organic compound layer) is formed. The constituent material of the common layer 34 is not particularly limited as long as it can efficiently inject carriers into the organic compound layer 32. The common layer 34 is formed as a layer for injecting and transporting holes or electrons in accordance with the characteristics (top emission type, bottom emission type) of the organic EL element provided in the device and the element configuration. Here, as a constituent material of the common layer 34, in consideration of the functions of the common layer 34 (the function of injecting and transporting holes, the function of injecting and transporting electrons), a material that transports holes or an electron transport material Select as appropriate.

  Moreover, when forming the common layer 34, a vacuum evaporation method can be used, but it is not limited to this.

(1-11) Upper electrode forming step (FIG. 1 (a12))
Next, the upper electrode 35 is formed on the common layer 34 (FIG. 1 (a12)). The organic EL display device is completed through the above steps.

  Here, when a top emission type element is manufactured as the organic EL element, the upper electrode 35 may be an electrode layer made of a material that does not inhibit (absorb, reflect, or scatter) light emitted from the organic compound layer 32. For example, transparent oxide materials (indium tin oxide, indium zinc oxide, indium tungsten zinc oxide, etc.) can be mentioned.

  When a bottom emission type element is manufactured as the organic EL element, the upper electrode 35 may be an electrode layer made of a material that reflects light emitted from the organic compound layer 32. For example, metal materials (Al, Ag, etc.) are mentioned.

  When the upper electrode 35 is formed, a sputtering method, a vacuum evaporation method, or the like can be used, but is not limited thereto.

  Thus, in the manufacturing method of the present invention, the etching process is performed before the lower electrode 31 is formed, and thereafter, the lower electrode 31 and the organic compound layer 32 are sequentially formed. For this reason, the surface of the lower electrode 31 is not contaminated by oxidation of the surface of the lower electrode 31 or generation of impurities in the etching process. In addition, it is not necessary to consider the occurrence of foreign matters on the surface of the lower electrode 31 in the etching process. Therefore, the organic EL display device can be manufactured while maintaining the carrier transport function inherent in the lower electrode 31.

(2) Second Embodiment FIG. 2 is a schematic cross-sectional view showing a second embodiment in the method for producing an organic EL display device of the present invention. Hereinafter, this embodiment will be described with reference to FIG. In the following description, differences from the first embodiment will be mainly described.

(2-1) Substrate (FIG. 2 (b1))
First, the board | substrate 10 provided with the contact part 11 (11a, 11b, 11c) is produced. A substrate 10 shown in FIG. 2 is a substrate for manufacturing an organic EL display device including three types of organic EL elements having different emission colors. Therefore, the substrate 10 is provided with three types of contact portions 11a, 11b, and 11c so as to correspond to the three types of organic EL elements. In the following description, the contact portion 11a is a first contact portion included in the first subpixel. The contact part 11b is a second contact part included in the second subpixel. The contact part 11c is a third contact part included in the third subpixel.

(2-2) First lower electrode forming step (FIG. 2 (b1))
In the substrate 10 shown in FIG. 2 (b1), the first lower electrode 31a includes a first organic EL element so as to be electrically connected to the first contact portion 11a corresponding to the first organic EL element. It is provided in a pattern shape corresponding to the region 30a where the sub-pixel is provided.

  As a constituent material of the first lower electrode 31a, the materials exemplified as the constituent material of the lower electrode 31 in the first embodiment can be used.

  In addition, as the method for forming the first lower electrode 31a, the method exemplified as the method for forming the lower electrode in the first embodiment can be employed. In the present embodiment, when the first lower electrode 31a is formed, a conductive film to be the first lower electrode 31a is formed on the entire surface of the substrate 10, and then the first subpixel is formed using a known patterning method. You may employ | adopt the method of processing into the pattern shape corresponding to the area | region 30a to provide. Moreover, when forming the 1st lower electrode 31a, the 1st lower electrode layer 31a may be formed by one layer, and may be formed as a laminated body of two or more layers.

(2-2) Step of forming the first organic compound layer (FIG. 2 (b2))
Next, the first organic compound layer 32a is formed on the entire surface of the substrate 10 (FIG. 2 (b2)). Similar to the organic compound layer 32 described in the first embodiment, the first organic compound layer 32a has a laminated structure including at least one functional layer including a light emitting layer.

(2-3) Sacrificial layer formation step (FIG. 2 (b3))
Next, a sacrificial layer 33 is formed on the first organic compound layer 31a (FIG. 2 (b3)). The sacrificial layer 33 is preferably a thin film that functions as a constituent member of the organic EL element, and the material is particularly limited as long as it is insoluble in the solvent used when the release layer 21 is removed. There is nothing.

(2-4) Release layer forming step (FIG. 2 (b4))
Next, the peeling layer 21 is formed on the sacrificial layer 33 (FIG. 2 (b4)). The member provided on the release layer 21 is removed (lifted off) together with the release layer 21 in a release layer removing step described later.

(2-5) Protective layer forming step (FIG. 2 (b5))
Next, the protective layer 23 is formed on the peeling layer 21 (FIG. 2 (b5)). Examples of the constituent material of the protective layer 23 include SiN. Note that the release layer 21 is not affected by the material (resist material, solvent) used in the next step (resist layer forming step) by the protective layer 23.

(2-6) Resist layer forming step (FIG. 2 (b6))
Next, a resist layer 22 is formed on the protective layer 23 (FIG. 2 (b6)). As a constituent material of the resist layer 22, the same materials as those listed in the first embodiment can be used.

(2-7) Exposure development process (FIG. 2 (b7))
Next, the resist layer 22 is exposed and developed to remove the resist layer 22 formed in the region where the second subpixel 30b including the second organic EL element is provided (FIG. 2 (b7)). . Note that the second contact portion 11b is also included in the planar region in which the second subpixel is provided.

(2-8) Processing steps such as release layer (FIG. 2 (b8))
Next, using the remaining resist layer 22 as a mask, by dry etching, the protective layer 23 formed in the region where the second organic EL element is provided, the release layer 21, the first organic compound layer 32a, Are removed sequentially. Thus, the patterning member 20b having an opening in the region where the second subpixel 30b is provided is formed (FIG. 2 (b8)).

In this step, the reaction gas used when performing the dry etching process can be appropriately selected according to the constituent material of the layer to be processed. For example, CF ₄ can be used as a reactive gas when processing the protective layer 23, and O ₂ can be used when processing the release layer 21 and the first organic compound layer 31a. Moreover, the 2nd contact part 11b expose | expresses by this process.

(2-9) Second lower electrode formation step (FIG. 2 (b9))
Next, the second lower electrode 31b is formed on the second contact portion 11b using the patterning member 20b. In addition, the material similar to the constituent material of the 1st lower electrode 31c can be used for the constituent material of the 2nd lower electrode 31b. Further, as a method of forming the second lower electrode 31b, a method similar to the method of forming the lower electrode 31 in the first embodiment can be employed.

(2-10) Step of forming the second organic compound layer (FIG. 2 (b10))
Next, the second organic compound layer 32b is formed on the second lower electrode 31b (FIG. 2 (b10)). The second organic compound layer 32b is preferably formed continuously with the second lower electrode 31b. The second organic compound layer 32b includes at least a light emitting layer having a light emission color different from that of the first organic compound layer 32a.

(2-11) Sacrificial layer forming step (FIG. 2 (b11))
Next, a sacrificial layer 33 is formed on the second organic compound layer 32b (FIG. 2 (b11)). The sacrificial layer 33 has the same function as the sacrificial layer 33 (FIG. 2B3) formed on the first organic compound layer 31a in the previous step.

(2-12) Patterning member removal step (FIGS. 2 (b12) to (b13))
Next, the patterning member 20b is removed from the substrate 10 (FIG. 2 (b13). Specifically, the patterning member 20b is immersed in a solvent in which the peeling layer 21 included in the patterning member 20b is dissolved and formed on the peeling layer 21. The patterning member 20b is lifted off from the substrate 10 together with the existing layer (FIG. 2 (b12)).

(2-13) Patterning member forming step (FIGS. 2 (b14) to (b18))
Next, the patterning member 20c having an opening in the region where the third subpixel including the third organic EL element is provided is formed (FIGS. 2 (b14) to (b18)). Note that the third contact portion 11c is also included in the planar region in which the third subpixel is provided.

As a process for forming the patterning member 20c, there are processes shown in the following steps (2-13a) to (2-13e).
(2-13a) Release layer 21 forming step (FIG. 2 (b14))
(2-13b) Step of forming protective layer 23 (FIG. 2 (b15))
(2-13c) Step of forming resist layer 22 (FIG. 2 (b16))
(2-13d) Exposure development process (FIG. 2 (b17))
(2-13e) Processing step of protective layer 23 and the like (FIG. 2 (b18))

  In addition, when performing the process shown by process (2-13a) thru | or (2-13e), it may carry out by the process similar to the process demonstrated in said (2-4) thru | or (2-8). it can.

(2-14) Third lower electrode formation step (FIG. 2 (b19))
Next, the third lower electrode 31c is formed on the third contact portion 11c using the patterning member 20c. The constituent material of the third lower electrode 31c can be the same material as that of the first lower electrode 31c and the second lower electrode 31b. Further, as a method of forming the third lower electrode 31b, a method similar to the method of forming the lower electrode 31 in the first embodiment can be employed.

(2-15) Step of forming the third organic compound layer (FIG. 2 (b20))
Next, the third organic compound layer 32c is formed on the third lower electrode 31c (FIG. 2 (b20)). The third organic compound layer 32c is preferably formed continuously with the third lower electrode 31c. The third organic compound layer 32c includes a light emitting layer having a light emission color different from that of at least the first organic compound layer 32a and the second organic compound layer 32b.

(2-16) Sacrificial layer forming step (FIG. 2 (b21))
Next, a sacrificial layer 33 is formed on the third organic compound layer 32c (FIG. 2 (b21)). The sacrificial layer 33 has the same function as the sacrificial layer 33 (FIG. 2B3) formed on the first organic compound layer 31a in the previous step.

(2-17) Patterning member removal step (FIGS. 2 (b22) to (b23))
Next, the patterning member 20c is removed from the substrate 10 (FIG. 2 (b23)). Specifically, the patterning member 20c is lifted off from the substrate 10 together with the layer formed on the release layer 21 by being immersed in a solvent in which the release layer 21 is dissolved (FIG. 2 (b22)).

  At this time, the organic compound layer 32 is protected from the solvent that dissolves the release layer 21 by the sacrificial layer 33. Next, after removing the release layer 21, the sacrificial layer 33 is removed by dipping in a specific solvent. At this time, the organic compound layer 32 is protected from the solvent that dissolves the sacrificial layer 33 by the uppermost layer (uppermost layer) of the organic compound layer 32. Here, the sacrificial layer 33 may be a material having a higher wet etching rate than the constituent material of the uppermost layer of the organic compound layer 32.

(2-18) Common layer forming step (FIG. 2 (b24))
Next, after removing the sacrificial layer 33, the common layer 34 (common organic compound layer) is formed (FIG. 2 (b24)). As a constituent material of the common layer 34, the same material as that used in the first embodiment can be used. In forming the common layer 34, a method similar to the method used in the first embodiment can be used.

(2-19) Upper electrode formation step (FIG. 2 (b25))
Next, the upper electrode 35 is formed on the common layer 34 (FIG. 2B25). The organic EL display device is completed through the above steps. As a constituent material of the upper electrode 35, the same material as that used in the first embodiment can be used. Further, when the upper electrode 35 is formed, a method similar to the method used in the first embodiment can be used.

  In the present invention, as described in this embodiment, a plurality of types of organic EL display devices having different emission colors and the like are manufactured by repeatedly performing the patterning member 20 forming step and the patterning member 20 removing step. can do. Theoretically, by performing the forming process of the patterning member 20 and the removing process of the patterning member 20 n times, an organic EL display device having n + 1 types of organic EL elements can be manufactured.

In addition, when forming the lower electrode (31b, 31c) using the patterning member 20, the end of the lower electrode (31b, 31c) may come into contact with the end of the lower electrode included in the adjacent subpixel. In some cases, the ends of the lower electrodes (31b, 31c) are insulated. Specifically, the end portions of the lower electrodes (31a, 31b) may be oxidized and insulated using O ₂ gas used when the patterning members (20b, 20c) are formed. For example, in the dry etching process performed before forming the second lower electrode 31b, the dry etching is performed so that the end portion of the first lower electrode 31a is oxidized. By performing this process, even if the first lower electrode 31a and the second lower electrode 31b are in contact with each other, the occurrence of leakage or short-circuit due to contact between the electrode members is suppressed. The same process can be performed when the third lower electrode 31c is manufactured. The constituent material of the lower electrode attached to the side wall of the patterning member (20b, 20c) can be peeled off in the removing process of the peeling layer 21 by lift-off.

  In the present invention, the side wall portions of the patterning members (20b, 20c) are processed (side etching) in the process of exposing the surface layers of the contact portions (11b, 11c) by performing dry etching. On top of that, the lower electrodes (31b, 31c) and the organic compound layers (32b, 32c) are preferably formed.

  FIG. 3 is a schematic cross-sectional view showing a state of film formation of the lower electrode and the organic compound layer in the steps from the patterning member forming step to the organic compound layer forming step. FIG. 3A shows an example in which the patterning member 20 is formed on the substrate 10 from a laminate composed of two organic compound layers.

Depending on the process conditions when dry etching is performed, the lower layer 2a that is the layer on the substrate 10 side among the layers constituting the patterning member 20 may be side-etched more than the upper layer 2b. Therefore, as shown in FIG. 3 (a), the cross-section of the patterning member 20 after dry etching is larger than the opening width d _b on the side opposite to the the substrate 10 towards the opening width d _a of the substrate 10 side There is a case.

  When the lower electrode 31 is formed by using the difference in the opening width and the straightness of the evaporation material in the vacuum deposition method, the lower electrode 31 is placed on the predetermined contact portion 11 as shown in FIG. It is possible to form a film with a certain width. Further, the organic compound layer 32 is formed on the lower electrode 31 while controlling the width by the same method, so that the organic compound layer 32 covers the end portion of the lower electrode 31 as shown in FIG. be able to. Thereby, it can suppress that the lower electrode 31 contacts with the upper 1st electrode formed at a next process.

  As described above, when the lower electrode 31 is formed with a constant width, a film is formed while the substrate 10 is transported in a uniaxial direction so as to have a constant width anywhere in the plane of the substrate 10, or an evaporation source is Although it is preferable to use a method of forming a film while transporting in a uniaxial direction, the present invention is not limited to this.

  Further, when forming the organic compound layer 32, as shown in FIG. 3C, the organic compound layer 32 is formed to have a constant width and to cover the end portion of the lower electrode 31 by the same film forming method. Is desirable.

  FIG. 4 is a schematic cross-sectional view showing the manufacturing process of the organic EL display device in this example (Example 1). Hereinafter, the manufacturing process of the present embodiment will be described with reference to FIG.

(1) Substrate (FIG. 4 (d1))
In this example, first, a substrate 10 provided with contact portions (11a, 11b, 11c) for electrical connection with a lower electrode to be described later was prepared. (Fig. 4 (d1))

(2) Patterning member forming step (FIGS. 4D2 to 4D5)
Next, an aqueous solution prepared by mixing polyvinylpyrrolidone and water was applied to the entire surface of the substrate 10, and a release layer 21 was formed by forming a film by spin coating (FIG. 4 (d2)). At this time, the thickness of the release layer 21 was 500 nm.

  Next, a positive photoresist (AZ Electronic Materials, AZ1500) was applied and formed on the release layer 21 by spin coating to form a resist layer 22 (FIG. 4 (d3)). At this time, the film thickness of the resist layer 22 was 1000 nm.

  Next, using the mask which has an opening in the area | region which provides an exposure apparatus and the 1st subpixel 30a, it exposed selectively about the area | region which provides the 1st subpixel 30a. At this time, the exposure time was 40 seconds. Next, using a developer (manufactured by AZ Electronic Materials, product name: 312 MIF diluted with water to a concentration of 50%), the resist layer 22 provided in the region where the first subpixel 30a is provided is formed. It was removed (FIG. 4 (d4)). At this time, the development time (time to immerse in the developer) was 60 seconds.

Next, the peeling layer 21 provided in the region where the first subpixel 30a is provided is selectively removed by dry etching using O ₂ gas, and patterning having an opening in the region where the first subpixel 30a is provided. The member 20a was formed (FIG. 4 (d5)). At this time, the flow rate of O ₂ gas was 20 sccm, and the pressure was 8 Pa. Further, the output condition when dry etching was 150 W, and the dry etching time was 300 seconds.

  As a result of the above processing, the first contact portion 11a included in the region where the first subpixel 30a is provided was exposed, and thus the surface of the first contact portion 11a was processed by dry etching using Ar gas.

(3) First lower electrode formation step (FIG. 4 (d6))
Next, Al was formed on the entire surface of the substrate 10 by vacuum evaporation to form the first lower electrode 31a (FIG. 4 (d6)).

(4) Step of forming the first organic compound layer (FIG. 4 (d7))
Next, the first organic compound layer 32a including the blue light-emitting layer was formed on the entire surface of the substrate 10 by vacuum deposition, continuously from the previous step (first lower electrode forming step) (FIG. 4 (d7)). )). The first organic compound layer 32a was a laminate in which a hole transport layer, a blue light emitting layer, and a hole block layer were laminated in this order. Moreover, the film thickness of the layer which comprises the 1st organic compound layer 32a was made into the hole transport layer: 120 nm, the blue light emitting layer: 20 nm, and the hole block layer: 10 nm, respectively.

(5) Sacrificial layer forming step (FIG. 4 (d8))
Next, a sacrificial layer 33 was formed by depositing an electron transporting material over the entire surface of the substrate 10 by a vacuum deposition method (FIG. 4D8). At this time, the thickness of the sacrificial layer 33 was set to 20 nm.

(6) Step of removing patterning member (FIGS. 4 (d9) to (d10))
Next, the substrate 10 was immersed in water. At this time, the release layer 21 is made of water-soluble polyvinyl pyrrolidone. For this reason, the peeling layer 21 was dissolved by this process, and the patterning member 20a and the layer formed on the patterning member 20a were lifted off from the substrate 1 (FIGS. 4 (d9) to (d10)).

(7) Patterning member forming step (FIGS. 4 (d11) to (d14))
Next, an aqueous solution prepared by mixing polyvinyl pyrrolidone and water was applied to the entire surface of the substrate 10, and a release layer 21 was formed by forming a film by spin coating (FIG. 4 (d11)). At this time, the thickness of the release layer 21 was 500 nm.

  Next, a positive photoresist (manufactured by AZ Electronic Materials, AZ1500) was applied and formed on the release layer 21 by spin coating to form a resist layer 22 (FIG. 4 (d12)). At this time, the film thickness of the resist layer 22 was 1000 nm.

  Next, using the mask which has an opening in the area | region which provides an exposure apparatus and the 2nd subpixel 30b, it exposed selectively about the area | region which provides the 2nd subpixel 30b. At this time, the exposure time was 40 seconds. Next, the resist layer 22 provided in the region where the second sub-pixel 30b is provided using a developer (manufactured by AZ Electronic Materials, product name: 312MIF diluted with water to a concentration of 50%). It was removed (FIG. 4 (d13)). At this time, the development time (time to immerse in the developer) was 60 seconds.

Next, the peeling layer 21 provided in the region where the second subpixel 30b is provided is selectively removed by dry etching using O ₂ gas to form the second patterning member 20b (FIG. 4 (d14)). )). At this time, the flow rate of O ₂ gas was 20 sccm, and the pressure was 8 Pa. Further, the output condition when dry etching was 150 W, and the dry etching time was 300 seconds.

  As a result of the above processing, the second contact portion 11b included in the region where the second subpixel is provided was exposed, and thus the surface of the second contact portion 11b was processed by dry etching using Ar gas.

(8) Second lower electrode formation step (FIG. 4 (d15))
Next, Al was formed on the entire surface of the substrate 10 by vacuum evaporation to form the second lower electrode 31b (FIG. 4 (d15)).

(9) Step of forming the second organic compound layer (FIG. 4 (d16))
Next, the second organic compound layer 32b including the green light emitting layer was formed on the entire surface of the substrate 10 by vacuum deposition, continuously from the previous step (second lower electrode forming step) (FIG. 4 (d16)). ). The second organic compound layer 32a was a laminate in which a hole transport layer, a blue light emitting layer, and a hole block layer were laminated in this order. The thicknesses of the layers constituting the second organic compound layer 32b were a hole transport layer: 160 nm, a blue light emitting layer: 30 nm, and a hole block layer: 10 nm, respectively.

(10) Sacrificial layer forming step (FIG. 4 (d17))
Next, a sacrificial layer 33 was formed by depositing an electron transporting material over the entire surface of the substrate 10 by vacuum evaporation (FIG. 4D17). At this time, the thickness of the sacrificial layer 33 was set to 20 nm.

(11) Patterning member removal step (FIG. 4 (d18))
Next, the substrate 10 was immersed in water. At this time, the release layer 21 is made of water-soluble polyvinyl pyrrolidone. For this reason, the peeling layer 21 was dissolved by this process, and the patterning member 20 and the layer formed on the patterning member 20 were lifted off from the substrate 1 (FIG. 4 (d18)).

(12) Patterning member forming step (FIGS. 4 (d19) to (d22))
Next, an aqueous solution prepared by mixing polyvinylpyrrolidone and water was applied to the entire surface of the substrate 10, and a release layer 21 was formed by forming a film by spin coating (FIG. 4 (d19)). At this time, the thickness of the release layer 21 was 500 nm.

  Next, a positive photoresist (manufactured by AZ Electronic Materials, AZ1500) was applied and formed on the release layer 21 by spin coating to form a resist layer 22 (FIG. 4 (d20)). At this time, the film thickness of the resist layer 22 was 1000 nm.

  Next, using the mask which has an opening in the area | region which provides an exposure apparatus and the 3rd subpixel 30c, it exposed selectively about the area | region which provides the 3rd subpixel 30c. At this time, the exposure time was 40 seconds. Next, the resist layer 22 provided in the region where the third subpixel 30c is provided is formed using a developer (manufactured by AZ Electronic Materials, product name: 312MIF diluted with water to a concentration of 50%). It was removed (FIG. 4 (d21)). At this time, the development time (time to immerse in the developer) was 60 seconds.

Next, the peeling layer 21 provided in the region where the third subpixel 30c is provided is selectively removed by dry etching using O ₂ gas to form the patterning member 20c (FIG. 4 (d22)). . At this time, the flow rate of O ₂ gas was 20 sccm, and the pressure was 8 Pa. Further, the output condition when dry etching was 150 W, and the dry etching time was 300 seconds.

  As a result of the above processing, the third contact portion 11c included in the region where the third subpixel 30c is provided was exposed, and thus the surface of the third contact portion 11c was processed by dry etching using Ar gas.

(13) Step of forming the third lower electrode (FIG. 4 (d23))
Next, Al was formed on the entire surface of the substrate 10 by vacuum evaporation to form the third lower electrode 31c (FIG. 4 (d23)).

(14) Step of forming the third organic compound layer (FIG. 4 (d24))
Next, the second organic compound layer 32b including the red light emitting layer was formed on the entire surface of the substrate 10 by vacuum deposition continuously from the previous step (third lower electrode forming step) (FIG. 4 (d24)). ). The second organic compound layer 32a was a laminate in which a hole transport layer, a red light emitting layer, and a hole block layer were laminated in this order. The thicknesses of the layers constituting the second organic compound layer 32b were a hole transport layer: 200 nm, a red light emitting layer: 30 nm, and a hole block layer: 10 nm, respectively.

(15) Sacrificial layer forming step (FIG. 4 (d25))
Next, a sacrificial layer 33 was formed by depositing an electron transporting material over the entire surface of the substrate 10 by vacuum evaporation (FIG. 4D17). At this time, the thickness of the sacrificial layer 33 was set to 20 nm.

(16) Patterning member removal step (FIG. 4 (d26))
Next, the substrate 10 was immersed in water. At this time, the release layer 21 is made of water-soluble polyvinyl pyrrolidone. For this reason, the peeling layer 21 was dissolved by this step, and the patterning member 20c and the layer formed on the patterning member 20c were lifted off from the substrate 1 (FIG. 4 (d26)).

  At this time, the organic compound layer 32 is protected from the solvent that dissolves the release layer 21 by the sacrificial layer 33. Next, after removing the release layer 21, the sacrificial layer 33 is removed by dipping in a specific solvent. At this time, the uppermost layer (uppermost layer) of the organic compound layer 32 is protected from the solvent that dissolves the sacrificial layer 33. Here, the sacrificial layer 33 may be a material having a higher wet etching rate than the constituent material of the uppermost layer of the organic compound layer 32.

(17) Common layer forming step (FIG. 4 (d27))
Next, after the sacrificial layer 33 was removed by vacuum deposition, an electron injection layer as the common layer 34 was formed (FIG. 4 (d27)). At this time, the thickness of the electron injection layer was 20 nm.

(18) Upper electrode forming step (FIG. 4 (d28))
Next, Ag was deposited by sputtering to form the upper electrode 35 (FIG. 4 (d28)). At this time, the film thickness of the upper electrode 35 was 16 nm.

(19) Sealing Step Next, the substrate 10 is moved to a nitrogen atmosphere, and an ultraviolet curable resin is used to bond the substrate 10 and a sealing glass plate (not shown) to form a nitrogen sealing structure. The organic EL display device was protected from being exposed to the outside air. Through the above steps, an organic EL display device was obtained.

(20) Evaluation of organic EL display device Next, organic EL display device obtained and organic EL layer obtained by patterning red, green and blue organic compound layers using metal mask vapor deposition in a vacuum consistent environment The characteristics with the display device were compared. Specifically, for each color, the characteristics of light emission chromaticity, current efficiency, and luminance degradation during long-term driving were measured and evaluated. As a result, it was found to be equivalent to an organic EL display device obtained by employing patterning using a metal mask vapor deposition method. Further, the pixel aperture ratio could be increased as compared with the metal mask vapor deposition method.

  As described above, according to the method of the present invention, it has been found that the organic compound layer can be patterned with a large aperture ratio as compared with the metal mask vapor deposition method, and the device characteristics are not problematic.

  An organic EL display device was manufactured according to the manufacturing process shown in FIG.

(1) Substrate with electrode (FIG. 2 (b1))
In the present embodiment, an electrode-attached substrate in which the first lower electrode 31a is provided in advance in the region where the first subpixel 30a is provided on the substrate 10 is used (FIG. 2 (b1)). In the present embodiment, the first lower electrode 31a is a laminated electrode thin film made of a film made of Ag and a film made of ITO (indium tin oxide), and is electrically connected to the first contact portion 11a. . In addition to the first contact portion 11a, the substrate 10 includes a second contact portion 11b provided in a region where a second subpixel described later is provided, a third contact portion 11c provided in a region where the third subpixel is provided, It also has.

(2) Step of forming the first organic compound layer (FIG. 2 (b2))
Next, a first organic compound layer 32a including a blue light emitting layer was formed on the entire surface of the substrate 10 by vacuum deposition (FIG. 2 (b2)). The first organic compound layer 32a was a laminate in which a hole transport layer, a blue light emitting layer, and a hole block layer were laminated in this order. Moreover, the film thickness of the layer which comprises the 1st organic compound layer 32a was made into the hole transport layer: 120 nm, the blue light emitting layer: 20 nm, and the hole block layer: 10 nm, respectively.

(3) Sacrificial layer formation step (FIG. 2 (b3))
Next, a sacrificial layer 33 was formed by depositing an electron transporting material on the entire surface of the substrate 10 by vacuum deposition (FIG. 2B3). At this time, the thickness of the sacrificial layer 33 was set to 20 nm.

(4) Patterning member forming step (FIGS. 2 (b4) to (b8))
Next, the peeling layer 21 was formed by apply | coating the aqueous solution prepared by mixing polyvinylpyrrolidone and water to the whole surface of the board | substrate 10, and forming into a film with a spin coat method (FIG.2 (b4)). At this time, the thickness of the release layer 21 was 500 nm.

  Next, a protective layer 23 was formed by forming a SiN film on the release layer 21 by plasma CVD (FIG. 2 (b5)). At this time, the thickness of the protective layer 23 was 1000 nm.

  Next, a positive photoresist (AZ 1500, manufactured by AZ Electronic Materials) was applied and formed on the protective layer 23 by spin coating to form a resist layer 22 (FIG. 2 (b6)). At this time, the film thickness of the resist layer 22 was 1000 nm.

  Next, using the mask which has an opening in the area | region which provides an exposure apparatus and the 2nd subpixel 30b, it exposed selectively about the area | region which provides the 2nd subpixel 30b. At this time, the exposure time was 40 seconds. Next, using a developer (manufactured by AZ Electronic Materials, product name: 312 MIF diluted with water to a concentration of 50%), the resist layer 22 provided in the region where the first subpixel 30a is provided is formed. It was removed (FIG. 2 (b7)). At this time, the development time (time to immerse in the developer) was 60 seconds.

Next, the protective layer 23 in the region where the second subpixel 30b is provided was selectively removed by dry etching using CF ₄ gas. At this time, the flow rate of CF ₄ gas was 30 sccm, and the pressure was 10 Pa. In addition, the output condition for dry etching was 150 W, and the dry etching time was 420 seconds.

Next, the peeling layer 21, the sacrificial layer 33, and the first organic compound layer 32a provided in the region where the second subpixel 30b is provided are selectively removed by dry etching using O ₂ gas, and the patterning member is removed. 20b was formed (FIG. 2 (b8)). At this time, the flow rate of O ₂ gas was 20 sccm, and the pressure was 8 Pa. Further, the output condition when dry etching was 150 W, and the dry etching time was 300 seconds.

  As a result of the above processing, the second contact portion 11b included in the region where the second subpixel 30b is provided was exposed, and thus the surface of the second contact portion 11b was processed by dry etching using Ar gas. In this step, the first organic compound layer 32a is easily side-etched in the process of dry etching. For this reason, the cross-sectional shape of the laminated film after etching is a cross-sectional shape in which the opening width of the first organic compound layer 32 a is larger than the opening width of the protective layer 23. By using this difference in opening width, the second lower electrode 31b formed in the next step (second lower electrode forming step) is formed on the second contact portion 11b with a constant width. Is possible.

(5) Step of forming the second lower electrode (FIG. 2 (b9))
Next, Al was formed on the entire surface of the substrate 10 by vacuum evaporation to form the second lower electrode 31b (FIG. 2 (b9)). Before forming the second lower electrode 31b, a series of processing processes including dry etching are performed in the region where the second subpixel 30b is provided. For this reason, with respect to the second lower electrode 31b, it is necessary to consider the foreign matter that may be generated on the surface of the second lower electrode 31 by the dry etching process and the oxidation / contamination of the surface of the second lower electrode 31b due to exposure in the dry etching environment. Absent.

(6) Step of forming the second organic compound layer (FIG. 2 (b10))
Next, a second organic compound layer 32b including a green light-emitting layer was formed on the entire surface of the substrate 10 by a vacuum deposition method continuously from the previous step (second lower electrode forming step) (FIG. 2 (b10)). ). The second organic compound layer 32a was a laminate in which a hole transport layer, a blue light emitting layer, and a hole block layer were laminated in this order. Moreover, the film thickness of the layer which comprises the 2nd organic compound layer 32b was made into the positive hole transport layer: 160 nm, the green light emitting layer: 30 nm, and the hole block layer: 10 nm, respectively.

(7) Sacrificial layer formation step (FIG. 2 (b11))
Next, a sacrificial layer 33 was formed by depositing an electron transporting material on the entire surface of the substrate 10 by a vacuum deposition method (FIG. 2B11). At this time, the thickness of the sacrificial layer 33 was set to 20 nm.

(8) Patterning member removal step (FIGS. 2 (b12) to (b13))
Next, the substrate 10 was immersed in water. At this time, the release layer 21 is made of water-soluble polyvinyl pyrrolidone. For this reason, the peeling layer 21 was dissolved by this process, and the patterning member 20 and the layer formed on the patterning member 20 were lifted off from the substrate 10 (FIG. 2 (b12) to (b13)).

(9) Patterning member forming step (FIGS. 2 (b14) to (b18))
Next, an aqueous solution prepared by mixing polyvinylpyrrolidone and water was applied to the entire surface of the substrate 10, and a release layer 21 was formed by forming a film by spin coating (FIG. 2 (b14)). At this time, the thickness of the release layer 21 was 500 nm.

  Next, an SiN film was formed on the release layer 21 by a plasma CVD method to form a protective layer 23 (FIG. 2 (b15). At this time, the thickness of the protective layer 23 was set to 1000 nm.

  Next, a positive photoresist (AZ Electronic Materials, AZ1500) was applied and formed on the release layer 21 by spin coating to form a resist layer 22 (FIG. 2 (b16)). At this time, the film thickness of the resist layer 22 was 1000 nm.

  Next, using the mask which has an opening in the area | region which provides an exposure apparatus and the 3rd subpixel 30c, it exposed selectively about the area | region which provides the 3rd subpixel 30c. At this time, the exposure time was 40 seconds. Next, the resist layer 22 in the region where the third subpixel 30c is provided was removed using a developer (manufactured by AZ Electronic Materials, trade name: 312MIF diluted with water to a concentration of 50%) ( FIG. 2 (b17)). At this time, the development time (time to immerse in the developer) was 60 seconds.

Next, the protective layer 23 provided in the region where the third subpixel 30c is provided is selectively removed by dry etching using CF ₄ gas. At this time, the flow rate of CF ₄ gas was 30 sccm, and the pressure was 10 Pa. In addition, the output condition for dry etching was 150 W, and the dry etching time was 420 seconds.

Next, the third patterning member 20c was formed by selectively removing the release layer 21 provided in the region where the third subpixel 30c is provided by dry etching using O ₂ gas (FIG. 2B18). )). At this time, the flow rate of O ₂ gas was 20 sccm, and the pressure was 8 Pa. Further, the output condition when dry etching was 150 W, and the dry etching time was 300 seconds.

  As a result of the above processing, the third contact portion 11c included in the region where the third subpixel 30c is provided was exposed, and thus the surface of the third contact portion 11c was processed by dry etching using Ar gas.

  As a result of the above processing, the third contact portion 11c included in the region where the third subpixel 30 is provided was exposed, and thus the surface of the third contact portion 11c was processed by dry etching using Ar gas. In this step, the second organic compound layer 32b is easily side-etched in the process of dry etching. For this reason, the cross-sectional shape of the laminated film after the etching is a cross-sectional shape in which the opening width of the second organic compound layer 32 b is larger than the opening width of the protective layer 23. By utilizing this difference in opening width, the third lower electrode 31c formed in the next step (third lower electrode forming step) is formed on the third contact portion 11c with a constant width. Is possible.

(10) Step of forming the third lower electrode (FIG. 2 (b19))
Next, Al was formed on the entire surface of the substrate 10 by vacuum evaporation to form a third lower electrode 31c (FIG. 2 (b19)).

(11) Step of forming the third organic compound layer (FIG. 2 (b20))
Next, a third organic compound layer 32c including a red light emitting layer was formed on the entire surface of the substrate 10 by a vacuum deposition method continuously from the previous step (third lower electrode forming step) (FIG. 2 (b20)). ). In addition, the 3rd organic compound layer 32c was taken as the laminated body formed by laminating | stacking a hole transport layer, a red light emitting layer, and a hole block layer in this order. Moreover, the film thickness of the layer which comprises the 3rd organic compound layer 32c was made into the hole transport layer: 200nm, the red light emitting layer: 30nm, and the hole block layer: 10nm, respectively.

(12) Sacrificial layer forming step (FIG. 2 (b21))
Next, a sacrificial layer 33 was formed by depositing an electron transporting material over the entire surface of the substrate 10 by vacuum evaporation (FIG. 2B21). At this time, the thickness of the sacrificial layer 33 was set to 20 nm.

(13) Patterning member removal step (FIG. 2 (b22))
Next, the substrate 10 was immersed in water. At this time, the release layer 21 is made of water-soluble polyvinyl pyrrolidone. For this reason, the peeling layer 21 was dissolved by this step, and the patterning member 20 and the layer formed on the patterning member 20 were lifted off from the substrate 10 (FIG. 2 (b22)).

  At this time, the organic compound layer 32 is protected from the solvent that dissolves the release layer 21 by the sacrificial layer 33. Next, after removing the release layer 21, the sacrificial layer 33 is removed by dipping in a specific solvent. At this time, the uppermost layer (uppermost layer) of the organic compound layer 32 is protected from the solvent that dissolves the sacrificial layer 33. Here, the sacrificial layer 33 may be a material having a higher wet etching rate than the constituent material of the uppermost layer of the organic compound layer 32.

(14) Common layer forming step (FIG. 2 (b23))
Next, after the sacrificial layer 33 was removed by vacuum deposition, an electron injection layer as the common layer 34 was formed (FIG. 4 (b23)). At this time, the thickness of the electron injection layer was 20 nm.

(15) Upper electrode forming step (FIG. 2 (b24))
Next, Ag was formed by sputtering to form the upper electrode 35 (FIG. 2 (b23)). At this time, the film thickness of the upper electrode 35 was 16 nm.

(16) Sealing Step Next, the substrate 10 is moved to a nitrogen atmosphere, and an ultraviolet curable resin is used to bond the substrate 10 and a sealing glass plate (not shown) to form a nitrogen sealing structure. The organic EL display device was protected from being exposed to the outside air. Through the above steps, an organic EL display device was obtained.

(17) Evaluation of organic EL display device The obtained organic EL display device was evaluated in the same manner as in Example 1. As a result, it was found to be equivalent to an organic EL display device obtained by employing patterning using a metal mask vapor deposition method. Further, the pixel aperture ratio could be increased as compared with the metal mask vapor deposition method.

  As described above, according to the method of the present invention, it has been found that the organic compound layer can be patterned with a large aperture ratio as compared with the metal mask vapor deposition method, and the device characteristics are not problematic.

  10: substrate, 11 (11a, 11b, 11c): contact portion, 20 (20a, 20b, 20c): patterning member, 21: release layer, 22: resist layer, 23: protective layer, 31: lower electrode, 32: Organic compound layer, 33: sacrificial layer, 34: common layer, 35: upper electrode

Claims (6)

A substrate, and a plurality of organic EL elements provided on the substrate,
A drive circuit is provided inside the substrate,
The organic EL element comprises a lower electrode provided on a substrate, an organic compound layer formed on the lower electrode, and an upper electrode formed on the organic compound layer,
In the method of manufacturing an organic EL display device in which the drive circuit and the lower electrode are electrically connected by a contact portion provided in the substrate.
A patterning member forming step of forming a patterning member having a pattern shape not covering a predetermined contact portion on the substrate;
A lower electrode forming step of forming a conductive film made of an electrode material so as to cover at least a part of the region on the patterning member and the predetermined contact portion;
An organic compound layer forming step of forming a film made of an organic material on the lower electrode;
Removing the patterning member together with the conductive film and the organic compound layer formed on the patterning member;
And a step of forming the upper electrode to form the upper electrode. Having at least a substrate, a first organic EL element and a second organic EL element provided on the substrate,
A drive circuit is provided inside the substrate,
The first organic EL element includes a first lower electrode provided on a substrate, a first organic compound layer formed on the first lower electrode, and a first organic compound layer formed on the first organic compound layer. An upper electrode, and
The second organic EL element includes a second lower electrode provided on the substrate, a second organic compound layer formed on the second lower electrode, and a second upper part formed on the second organic compound layer. Electrodes,
The first lower electrode and the second lower electrode are electrodes formed individually,
The drive circuit and the first lower electrode are electrically connected by a first contact portion provided in the substrate,
In the method of manufacturing an organic EL display device in which the drive circuit and the second lower electrode are electrically connected by a second contact portion provided in the substrate.
Forming a first lower electrode on the substrate; forming a first lower electrode;
Forming a first organic compound layer on the substrate; forming a first organic compound layer; and
A patterning member forming step of patterning the first organic compound layer to form a patterning member having a pattern shape not covering the second contact portion on the substrate;
Forming a second lower electrode on the second contact portion, forming a second lower electrode;
Forming a second organic compound layer to form a second organic compound layer on the second lower electrode;
Removing the patterning member to remove the patterning member;
And an upper electrode forming step of forming an electrode layer that also serves as the first upper electrode and the second upper electrode.   The method for manufacturing an organic EL display device according to claim 1, wherein the patterning member includes an organic compound. The patterning member has a release layer that dissolves in a predetermined solvent,
The method for manufacturing an organic EL display device according to claim 1, wherein the patterning member is removed by dissolving the release layer. The patterning member has a sacrificial layer;
The method for manufacturing an organic EL display device according to claim 1, wherein the sacrificial layer is insoluble in a solvent that dissolves the release layer. The patterning member has a protective layer;
The method for manufacturing an organic EL display device according to claim 4, wherein the protective layer is formed on the release layer.

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