JP2013254841A5 - - Google Patents
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- JP2013254841A5 JP2013254841A5 JP2012129457A JP2012129457A JP2013254841A5 JP 2013254841 A5 JP2013254841 A5 JP 2013254841A5 JP 2012129457 A JP2012129457 A JP 2012129457A JP 2012129457 A JP2012129457 A JP 2012129457A JP 2013254841 A5 JP2013254841 A5 JP 2013254841A5
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- substrate
- light emitting
- stretched portion
- altered
- altered region
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- 239000000758 substrate Substances 0.000 claims 21
- 238000004519 manufacturing process Methods 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 1
Claims (10)
第一表面及び第二表面を有し、該第一表面は該第二表面と相対する基板を提供するステップと、
複数の発光スタック層を前記基板の第二表面に形成するステップと、
前記複数の発光スタック層を覆う支持層を形成するステップと、
前記基板の前記第一表面からエネルギーを前記基板内に与え、前記基板内に複数の不連続な第一変質領域を形成するステップと、
酸化層を前記基板の前記第一表面に形成するステップと、
前記複数の不連続な第一変質領域に沿って前記基板を切断するステップと、
を含む、発光素子の製造方法。 A method for manufacturing a light emitting device, comprising at least:
Providing a substrate having a first surface and a second surface, the first surface facing the second surface;
Forming a plurality of light emitting stack layers on the second surface of the substrate;
Forming a support layer covering the plurality of light emitting stack layers;
Applying energy from the first surface of the substrate into the substrate to form a plurality of discontinuous first altered regions in the substrate;
Forming an oxide layer on the first surface of the substrate;
Cutting the substrate along the plurality of discontinuous first altered regions;
A method for manufacturing a light emitting device, comprising:
請求項１に記載の発光素子の製造方法。 And further comprising removing the support layer.
The manufacturing method of the light emitting element of Claim 1.
前記第一延伸部は、前記第一変質領域と前記基板の前記第二表面との間に形成される、
請求項１に記載の発光素子の製造方法。 Furthermore, the step of forming a first stretched portion in the first altered region,
The first stretched portion is formed between the first altered region and the second surface of the substrate.
The manufacturing method of the light emitting element of Claim 1.
前記第二変質領域及び前記第一変質領域は、前記基板の前記第一表面に垂直である方向に互いに重なり合い又は重なり合わない、
請求項１に記載の発光素子の製造方法。 Further comprising applying energy from the first surface of the substrate into the substrate to form a plurality of discontinuous second altered regions within the substrate;
The second altered region and the first altered region overlap or do not overlap each other in a direction perpendicular to the first surface of the substrate;
The manufacturing method of the light emitting element of Claim 1.
第一表面及び第二表面を有し、該第一表面は該第二表面と相対する基板と、
前記基板の前記第二表面に位置する発光スタック層と、
前記基板の前記第一表面に位置し、前記基板の前記第一表面を完全に覆う酸化層と、
前記基板の内部に形成される複数の不連続な第一変質領域と、
を含む、発光素子。 A light emitting device, at least,
A first surface and a second surface, wherein the first surface is opposite the second surface;
A light emitting stack layer located on the second surface of the substrate;
An oxide layer located on the first surface of the substrate and completely covering the first surface of the substrate;
A plurality of discontinuous first altered regions formed in the substrate;
A light emitting device.
前記基板の前記第二表面に位置する第一導電型半導体層と、
前記第一導電型半導体層に位置する活性層と、
前記活性層に位置する第二導電型半導体層と、
を含む、請求項５に記載の発光素子。 The light emitting stack layer is at least
A first conductivity type semiconductor layer located on the second surface of the substrate;
An active layer located in the first conductivity type semiconductor layer;
A second conductivity type semiconductor layer located in the active layer;
The light emitting element of Claim 5 containing.
請求項５に記載の発光素子。 Furthermore, including a metal layer formed on the oxide layer,
The light emitting device according to claim 5 .
前記第一延伸部は、前記第一変質領域と前記基板の前記第二表面との間に形成され、前記第一延伸部の高さは、０．１−２００μｍである、
請求項５に記載の発光素子。 Furthermore, including a first stretched portion formed in the first altered region,
The first stretched portion is formed between the first altered region and the second surface of the substrate, and the height of the first stretched portion is 0.1-200 μm.
The light emitting device according to claim 5 .
前記第二延伸部は、前記第一変質領域と前記基板の前記第一表面との間に形成され、前記第二延伸部の高さは、前記第一延伸部の高さよりも小さい、
請求項８に記載の発光素子。 Furthermore, including a second stretched portion formed in the first altered region,
The second stretched portion is formed between the first altered region and the first surface of the substrate, and the height of the second stretched portion is smaller than the height of the first stretched portion.
The light emitting device according to claim 8 .
前記第二変質領域及び前記第一変質領域は、前記基板の前記第一表面に垂直である方向に互いに重なり合い又は重なり合わない、
請求項５に記載の発光素子。 And a second altered region formed in the substrate,
The second altered region and the first altered region overlap or do not overlap each other in a direction perpendicular to the first surface of the substrate;
The light emitting device according to claim 5 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012129457A JP6128758B2 (en) | 2012-06-07 | 2012-06-07 | Method for manufacturing light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012129457A JP6128758B2 (en) | 2012-06-07 | 2012-06-07 | Method for manufacturing light emitting device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013254841A JP2013254841A (en) | 2013-12-19 |
| JP2013254841A5 true JP2013254841A5 (en) | 2015-07-02 |
| JP6128758B2 JP6128758B2 (en) | 2017-05-17 |
Family
ID=49952127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012129457A Active JP6128758B2 (en) | 2012-06-07 | 2012-06-07 | Method for manufacturing light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6128758B2 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003338468A (en) * | 2002-03-12 | 2003-11-28 | Hamamatsu Photonics Kk | Manufacturing method of light-emitting element, light- emitting diode, and semiconductor laser element |
| JP5232375B2 (en) * | 2006-10-13 | 2013-07-10 | アイシン精機株式会社 | Method for separating semiconductor light emitting device |
| US8728916B2 (en) * | 2009-02-25 | 2014-05-20 | Nichia Corporation | Method for manufacturing semiconductor element |
| JP5528904B2 (en) * | 2010-05-20 | 2014-06-25 | 株式会社ディスコ | Method for dividing sapphire wafer |
| JP2011243875A (en) * | 2010-05-20 | 2011-12-01 | Disco Abrasive Syst Ltd | Dividing method of sapphire wafer |
-
2012
- 2012-06-07 JP JP2012129457A patent/JP6128758B2/en active Active
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