JP2013243785A - Imaging method and imaging apparatus - Google Patents

Imaging method and imaging apparatus Download PDF

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JP2013243785A
JP2013243785A JP2013187128A JP2013187128A JP2013243785A JP 2013243785 A JP2013243785 A JP 2013243785A JP 2013187128 A JP2013187128 A JP 2013187128A JP 2013187128 A JP2013187128 A JP 2013187128A JP 2013243785 A JP2013243785 A JP 2013243785A
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Kazuhiko Nakamura
和彦 中村
Kiyotaka Kogo
清孝 向後
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Hitachi Kokusai Electric Inc
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Abstract

PROBLEM TO BE SOLVED: To correct CCD dark current and high-intensity signal compression.SOLUTION: An imaging apparatus using a CCD comprises a 14-bit A/D and a 12-bit imaging signal processing circuit. After extending a high level of video signal output from effective pixels of a solid state imaging element, a smear calculated from VOB and dark current of the effective pixel are subtracted. A 14-bit video signal is compressed into 12 bits, and then signal processing is performed. Alternatively, the imaging apparatus using the CCD comprises a CDS, a 10-bit A/D, and an imaging signal processing circuit. The smear calculated from the VOB and reference voltage of the dark current CDS of the effective pixel are changed in units of pixels. Equivalently, after the CDS, the smear and the dark current of the effective pixel are subtracted from the video signal output from the effective pixels. With reference to the smear and the dark current of the effective pixels, the high level is extended to be subjected to signal processing in consideration of high-intensity compression of the smear and the dark current of the effective pixels.

Description

本発明は、固体撮像素子を有する撮像装置の映像信号を改善する方法に関するものである。   The present invention relates to a method for improving a video signal of an imaging apparatus having a solid-state imaging device.

CCD(Charge-Coupled-Device)撮像素子は固体撮像素子の中でも感度が高く、暗電流レベルが異常に高い白キズと呼ばれる画素が少ないが、高温度時や高感度撮像時や蓄積時は白キズが多い。また、CCD撮像素子はスポット光のような高輝度被写体を撮像した場合に、スポット光を撮像した画素のフォトダイオードから垂直転送路に過剰電荷が漏れ込み、高輝度被写体を撮像した画素と同じ垂直方向の画素すべてにスポット光の照度に比例した映像信号が重畳されて、垂直スミアとよばれる白い縦線が発生する。CCD撮像素子に撮像面の外側に蓄積面を設けて、垂直転送を高速化すれば、垂直スミアは低減する。しかし、蓄積面を設ければ、CCD撮像素子面積が倍増し、高価格化する。垂直転送を高速化すれば、消費電力も倍増し、白キズが増加する。さらにCCD撮像素子の近赤外感度を高くすると、フォトダイオードが深くなり白キズが増加する。CCD撮像素子のフォトダイオードの信号電荷電子をオーバーフロードレインに掃き捨てる(電子シャッタを行う)ことにより感度を低下させると垂直スミアは一定のレベルのまま感度を低下させることとなり、相対的に垂直スミアは増加する。
そこで、従来、光学的黒画素部分の暗電流レベルが異常に高い白キズと呼ばれる画素の影響を低減するため、CCD撮像素子の垂直方向の光学的黒画素(Vertical-Optical Black以下V−OB)部分の12ラインの出力の各垂直画素信号を平均し、1ライン分の信号として記憶し、この固体撮像素子の有効画素部分の出力信号よりこの記憶した信号を減算していた。(特許文献1参照)
CCD (Charge-Coupled-Device) image sensors are more sensitive than solid-state image sensors, and there are few pixels called white scratches with abnormally high dark current levels, but white scratches at high temperatures, during high-sensitivity imaging, or during storage. There are many. In addition, when the CCD image pickup device picks up a high-brightness subject such as a spot light, excess charge leaks from the photodiode of the pixel picked up with the spot light into the vertical transfer path, and the same vertical as the pixel picked up the high-brightness subject. A video signal proportional to the illuminance of the spot light is superimposed on all the pixels in the direction, and a white vertical line called vertical smear is generated. If the CCD imaging device is provided with a storage surface outside the imaging surface to increase the vertical transfer speed, the vertical smear is reduced. However, if a storage surface is provided, the area of the CCD image sensor doubles and the price increases. Increasing the vertical transfer speed doubles power consumption and increases white scratches. Further, when the near-infrared sensitivity of the CCD image sensor is increased, the photodiode becomes deeper and white scratches increase. When the sensitivity is lowered by sweeping signal charge electrons of the photodiode of the CCD image pickup device to the overflow drain (using an electronic shutter), the vertical smear is lowered at a constant level, and the vertical smear is relatively To increase.
Therefore, conventionally, in order to reduce the influence of pixels called white scratches where the dark current level of the optical black pixel portion is abnormally high, the vertical optical black pixels (Vertical-Optical Black or below V-OB) of the CCD image sensor The vertical pixel signals output from the 12 lines of the portion are averaged and stored as a signal for one line, and the stored signal is subtracted from the output signal of the effective pixel portion of the solid-state imaging device. (See Patent Document 1)

また、デジタル信号処理回路の集積化が進み、複数ラインの出力信号を記憶し算術処理することが、映像専用のメモリ集積DSPだけでなく、安価な汎用のFPGA(Field Programmable Gate Array)でも容易に実現できる様になった。但し、信号処理諧調をなるべく減らさないと回路規模が増大する。諧調12ビットまでなら画素単位で高輝度部分と低輝度部分と別の階調補正を行い映像の階調範囲を拡大するICも映像信号処理ICも市販されている。出力映像信号の諧調は一般に送用10bitで産業用8bitである。
さらに、CCDから出力された信号から雑音を除去するCDS(Correlated
Double Sampling)と暗電流補正と利得可変増幅回路(Automatic Gain Control以下AGC)とデジタル映像信号Viに変換するADC(Analog Digital Converter)とを内蔵したFEP(Front End Processor)が普及し、FEPのADC階調は従来10ビットだったが、12ビットや14ビットが一般化し、16ビットも製品化された。ADCを22ビットとし、AGCをADCの後に配置したFEPも製品化された。
Also, with the progress of integration of digital signal processing circuits, it is easy to store and arithmetically process output signals of multiple lines not only with video-only memory integrated DSPs but also with inexpensive general-purpose FPGAs (Field Programmable Gate Arrays). It became possible to realize. However, the circuit scale increases unless the signal processing gradation is reduced as much as possible. For gradations up to 12 bits, both an IC and a video signal processing IC for expanding the gradation range of an image by performing gradation correction separately for a high-luminance portion and a low-luminance portion on a pixel basis are commercially available. The gradation of the output video signal is generally 10 bits for transmission and 8 bits for industrial use.
Furthermore, CDS (Correlated) removes noise from the signal output from the CCD.
FEP (Front End Processor) with built-in double sampling, dark current correction, variable gain amplifier (automatic gain control, AGC) and ADC (Analog Digital Converter) that converts to digital video signal Vi is widely used. Gradation was conventionally 10 bits, but 12 bits and 14 bits have become commonplace, and 16 bits have been commercialized. An FEP in which the ADC is 22 bits and the AGC is placed after the ADC has also been commercialized.

さらに、電子増倍型CCD撮像素子(Electron
Multiplying-Charge Coupled Device以下EM−CCDと略す)は、電子冷却部と組み合わせて感度を高くできるため、可視光と近赤外光の夜間の撮影用の照明なしの準動画監視が可能となった。また、EM−CCDは、電子増倍を行う電極のCMGの電圧振幅が高い高電子増倍時は、0.1Vで1.4倍感度が変化し、11℃で1.8倍感度が変化する。CMG電圧振幅が低い低電子増倍時は垂直転送後に信号が増倍されるため、フォトダイオードや垂直転送路の転送容量不足が補われ、暗電流を低減する電子冷却と組み合わせれば映像の階調範囲が拡大する。さらにフォトダイオードの蓄積容量のばらつきで画面内で不均一だった映像の階調範囲が、画面内で均一になる。しかし、CMG電圧振幅が中程度の中電子増倍時は暗電流も電子増倍され暗電流が高レベルになり映像信号成分が飽和して映像の階調範囲が低下する。暗電流を低減する電子冷却と組み合わせれば約6度で半分と改善されるがそれでも暗電流が高レベルになり映像信号成分が飽和して映像の階調範囲が低下する。さらにCMG電圧振幅が高い高電子増倍時は水平変調度も低下し高輝度信号が圧縮されるので、EM−CCDを特に強く電子冷却して暗電流も最小限にし、CMG電圧振幅も最小限にしても暗電流が高レベルに及び映像信号成分が飽和して映像の階調範囲が低下する(非特許文献1と非特許文献2参照)。しかも、EM−CCDの電子冷却は、放熱が困難である。
Furthermore, an electron multiplying CCD image sensor (Electron
Multiplying-Charge Coupled Device (hereinafter abbreviated as EM-CCD) can be combined with an electronic cooling unit to increase sensitivity, enabling quasi-video monitoring without illumination for nighttime shooting of visible light and near infrared light. . Also, EM-CCD changes the sensitivity by 1.4 times at 0.1 V and changes by 1.8 times at 11 ° C during high electron multiplication where the voltage amplitude of CMG of the electrode for electron multiplication is high. To do. At low electron multiplication with low CMG voltage amplitude, the signal is multiplied after vertical transfer. Therefore, the shortage of transfer capacity of the photodiode and vertical transfer path is compensated, and when combined with electronic cooling that reduces dark current, The adjustment range is expanded. Furthermore, the gradation range of the video that is non-uniform in the screen due to variations in the storage capacity of the photodiode becomes uniform in the screen. However, when the CMG voltage amplitude is medium, the dark current is also electron-multiplied, the dark current becomes high level, the video signal component is saturated, and the gradation range of the video is lowered. When combined with electronic cooling that reduces dark current, the temperature is improved to about half at about 6 degrees. However, the dark current becomes high level, the video signal component is saturated, and the gradation range of the video is lowered. In addition, when the high CMG voltage amplitude is high, the horizontal modulation rate is reduced and the high luminance signal is compressed, so the EM-CCD is particularly strongly electronically cooled to minimize the dark current and the CMG voltage amplitude is also minimized. Even so, the dark current is at a high level, the video signal component is saturated, and the gradation range of the video is lowered (see Non-Patent Document 1 and Non-Patent Document 2). Moreover, it is difficult to dissipate heat in the electronic cooling of the EM-CCD.

さらにEM−CCDは垂直スミア成分が多い映像信号を生成する。暗電流に加えて垂直スミア成分が高レベルに及び、暗電流と垂直スミア成分を含む映像信号が高レベルに及ぶため、CMGだけでなくEM−CCD外部の信号回路でも飽和し易い。そのEM−CCDを電子冷却しても、高感度動作時は、暗電流に加えて白キズや垂直スミアのレベルが大きいだけでなく暗電流と垂直スミア成分を含む映像信号が飽和してしまう。その結果、暗電流に加えて垂直スミア補正の過不足の誤差分が増加して、白い縦筋が残り黒い縦筋が発生して映像の階調範囲が低下してしまう。その結果、高輝度の外部照明光が直接画面に入る夜間監視の障害となっている。
また、有効画素のCCD出力が過飽和レベルになるのより更に強い飽和入射光ではフォトダイオードで発生し垂直転送路にあふれたた過剰な電荷で垂直転送路が過飽和状態となり、強い入射光の映像の画面下端が垂直スミアより高い過飽和レベルのブルーミングとよばれる白状態になる。さらに過飽和し制限レベルに達したCCD出力映像信号となる異常に強い過飽和入射光では入射光の強度が高くなるに従い強い過飽和入射光の映像の画面下方から順々に、垂直スミアより高い過飽和レベルの白状態になり異常に強い過飽和入射光で水平転送路も過飽和状態となり、逆に画面上部の垂直スミアは沈み、水平方向にも白いすじ状の水平スミアが明らかになり、映像の階調範囲が低下する。異常に強い過飽和入射光の強度が更に高くなると、白が画面全体に広がる。スミアやブルーミングの源となる入射光を以下光源とする。
Further, the EM-CCD generates a video signal having a lot of vertical smear components. In addition to the dark current, the vertical smear component reaches a high level, and the video signal including the dark current and the vertical smear component reaches a high level. Therefore, not only the CMG but also a signal circuit outside the EM-CCD easily saturates. Even when the EM-CCD is electronically cooled, not only the dark current but also the level of white scratches and vertical smear are high in addition to the dark current, and the video signal including the dark current and the vertical smear component is saturated. As a result, in addition to the dark current, the amount of error in excess or deficiency in vertical smear correction increases, white vertical stripes remain, black vertical stripes occur, and the gradation range of the image decreases. As a result, it is an obstacle to nighttime monitoring when high-intensity external illumination light directly enters the screen.
In addition, when the CCD output of the effective pixel becomes more saturated than the saturated saturation light, the vertical transfer path becomes oversaturated due to excessive charge generated by the photodiode and overflowing the vertical transfer path, and the image of the strong incident light The bottom of the screen is in a white state called blooming with a supersaturation level higher than the vertical smear. In addition, the supersaturated incident light that becomes the CCD output video signal that is oversaturated and reaches the limit level has a supersaturation level higher than that of the vertical smear in order from the bottom of the screen of the image of the strong supersaturated incident light as the incident light intensity increases. The horizontal transfer path also becomes supersaturated due to abnormally strong supersaturated incident light, and the vertical smear at the top of the screen sinks, and white streaky horizontal smears are revealed in the horizontal direction. descend. When the intensity of abnormally strong supersaturated incident light is further increased, white spreads over the entire screen. The incident light that is the source of smear and blooming is hereinafter referred to as the light source.

また、CCD撮像素子を用いた固体撮像装置において、白キズ等のCCD撮像素子の暗電流の影響や高レベル圧縮の影響を受けない様に、垂直スミアを低減するため、垂直遮光映像4ラインの各垂直画素信号の平均信号を算出し水平信号も平均し、低レベルと高レベルを圧縮しCCD撮像素子の受光面の有効画素から出力される映像信号から減算している
(特許文献2参照)。
さらに、CCD撮像素子を用いた固体撮像装置において、白キズ等のCCD撮像素子の暗電流の影響を受けない様に垂直スミアを低減するため、CCD撮像素子の受光面の有効画素より先に読み出す4ラインの垂直遮光画素から取得した信号の画面垂直方向の暗電流むらを補正してから、垂直遮光映像4ラインの各垂直画素信号の最小値から2番目の値を算出し、垂直スミア補正信号として記憶し、映像AGCに合わせて利得を可変して固体撮像素子の受光面の有効画素から出力されるAGC後の映像信号から減算する。また、前記固体撮像素子から出力される信号を14ビットにA/D変換して前記代表値信号を算出して15/16に減衰して、CCD撮像素子の受光面の有効画素から出力される映像信号から減算している(特許文献3参照)。
In addition, in a solid-state imaging device using a CCD imaging device, in order to reduce vertical smear so as not to be affected by dark current of the CCD imaging device such as white scratches or high level compression, four lines of vertical light-shielded video are displayed. The average signal of each vertical pixel signal is calculated, the horizontal signal is also averaged, the low level and the high level are compressed, and subtracted from the video signal output from the effective pixel on the light receiving surface of the CCD image sensor (see Patent Document 2). .
Furthermore, in a solid-state imaging device using a CCD image sensor, the vertical smear is reduced so as not to be affected by the dark current of the CCD image sensor such as white scratches, so that the effective pixel on the light receiving surface of the CCD image sensor is read out. After correcting dark current unevenness in the vertical direction of the screen of the signal obtained from the four lines of vertical shading pixels, the second value is calculated from the minimum value of each vertical pixel signal of the four lines of vertical shading video, and the vertical smear correction signal And the gain is varied in accordance with the video AGC, and subtracted from the post-AGC video signal output from the effective pixels on the light receiving surface of the solid-state imaging device. Also, the signal output from the solid-state image sensor is A / D converted to 14 bits, the representative value signal is calculated and attenuated to 15/16, and output from the effective pixels on the light receiving surface of the CCD image sensor. Subtraction is performed from the video signal (see Patent Document 3).

特開平07−067038号公報JP 07-067038 A 特開2007−150770JP2007-150770 特開2008−109639JP2008-109639

TI製TC246RGB-B0680 x 500 PIXELIMPACTRON TM PRIMARY COLOR CCD IMAGE SENSOR SOCS087 - DECEMBER2004 - REVISEDMARCH 2005TI TC246RGB-B0680 x 500 PIXELIMPACTRON TM PRIMARY COLOR CCD CCD SENSOR SOCS087-DECEMBER2004-REVISEDMARCH 2005 DesertStar Systems製 Night and Low-Light Imaging with FrogEye TM and SharkEyeTM DigitalCameras Application Note 2nd Edition October 28 2005DesertStar Systems Night and Low-Light Imaging with FrogEye TM and SharkEyeTM DigitalCameras Application Note 2nd Edition October 28 2005

本発明の目的は、CCD撮像素子から出力される映像信号の白つぶれまたは黒レベル付近の偽信号または黒レベル以下への沈みこみまたは過飽和レベルの白を低減するなどの映像信号の階調範囲を拡大することにある。   An object of the present invention is to reduce the gradation range of a video signal, such as whiteout of a video signal output from a CCD image sensor, a false signal near a black level, subduction below a black level, or white at a supersaturated level. There is to expand.

本発明は、上記課題を解決するため、固体撮像素子と該固体撮像素子の受光面の有効画素から出力される映像信号を取得する第1の取得部と前記固体撮像素子の受光面の上部または下部の遮光した画素から出力される信号を取得する第2の取得部とを有する固体撮像装置において、前記第1の取得部で取得した有効画素から出力される映像信号の高レベルを伸長した信号と、上部または下部の遮光した画素の信号を用いて算出した近似暗電流信号またはスミア信号または上記近似暗電流信号とスミア信号の合計信号の高レベルを伸長した信号と、前記伸長した2信号の差分信号との少なくとも一つの前記信号を前記固体撮像装置の出力映像信号の制御に用いることを特徴とする撮像方法である。   In order to solve the above-described problems, the present invention provides a solid-state imaging device, a first acquisition unit that acquires a video signal output from an effective pixel on the light-receiving surface of the solid-state imaging device, and an upper portion of the light-receiving surface of the solid-state imaging device or A signal obtained by extending a high level of a video signal output from an effective pixel acquired by the first acquisition unit in a solid-state imaging device having a second acquisition unit that acquires a signal output from a lower light-shielded pixel And an approximate dark current signal or smear signal calculated using the signal of the shaded pixel at the top or bottom, or a signal obtained by expanding a high level of the total signal of the approximate dark current signal and the smear signal, and the two expanded signals It is an imaging method characterized in that at least one of the signals with a differential signal is used for controlling an output video signal of the solid-state imaging device.

また、固体撮像素子と該固体撮像素子の受光面の有効画素から出力される映像信号を取得する第1の取得部と前記固体撮像素子の受光面の上部または下部の遮光した画素から出力される信号を取得する第2の取得部とを有する固体撮像装置において、前記第1の取得部で取得した有効画素から出力される映像信号の高レベルを伸長した信号と、上部または下部の遮光した画素の信号を用いて算出した近似暗電流信号またはスミア信号または上記近似暗電流信号とスミア信号の合計信号の高レベルを伸長した信号と、の差分を算出し、該算出した信号を前記固体撮像装置の出力映像信号の制御に用いることを特徴とする撮像方法である。   Also, a solid-state image sensor, a first acquisition unit that acquires an image signal output from an effective pixel on the light-receiving surface of the solid-state image sensor, and a light-shielded pixel above or below the light-receiving surface of the solid-state image sensor. In a solid-state imaging device having a second acquisition unit for acquiring a signal, a signal obtained by extending a high level of a video signal output from an effective pixel acquired by the first acquisition unit, and a light-shielded pixel at the top or bottom The difference between the approximate dark current signal or smear signal calculated using the above signal or a signal obtained by extending the high level of the total signal of the approximate dark current signal and the smear signal is calculated, and the calculated signal is used as the solid-state imaging device. It is an imaging method characterized by being used for controlling the output video signal.

さらに、固体撮像素子と該固体撮像素子の受光面の有効画素から出力される映像信号を取得する第1の取得部と前記固体撮像素子の受光面の上部または下部の遮光した画素から出力される信号を取得する第2の取得部とを有する固体撮像装置において、上部または下部の遮光した画素の信号を用いて算出した近似暗電流信号またはスミア信号または上記近似暗電流信号とスミア信号の合計信号の高レベルを伸長した信号を前記第1の取得部で取得した有効画素から出力される映像信号の高レベルを伸長した信号から減算するか、または上記近似暗電流信号またはスミア信号または上記近似暗電流信号とスミア信号の合計信号を減算してから減算した上記近似暗電流信号またはスミア信号または上記近似暗電流信号とスミア信号の合計信号を基準に減算した前記第1の取得部で取得した有効画素から出力される映像信号の高レベルを伸長するかのどちらかの信号を信号処理して出力映像信号とすることを特徴とする撮像方法である。   Furthermore, it outputs from the solid-state image sensor, the 1st acquisition part which acquires the video signal output from the effective pixel of the light-receiving surface of the solid-state image sensor, and the light-shielded pixel above or below the light-receiving surface of the solid-state image sensor In a solid-state imaging device having a second acquisition unit for acquiring a signal, an approximate dark current signal or a smear signal calculated using a signal of a light-shielded pixel in the upper part or the lower part, or a sum signal of the approximate dark current signal and the smear signal Or subtracting the high level of the video signal output from the effective pixel acquired by the first acquisition unit from the extended signal, or approximating the dark current signal or smear signal or approximating dark Subtract the total signal of the current signal and the smear signal and then subtract the approximate dark current signal or smear signal or the total signal of the approximate dark current signal and smear signal. An image pickup method characterized in that one of the signals to extend the high level of the video signal output from the effective pixel acquired by the first acquisition unit subtracted to the signal is processed into an output video signal is there.

また、上記において、前記第2の取得部で取得した遮光した画素から出力される信号の複数ラインの各垂直画素信号の最小値からN(Nは自然数)番目の値、最大値からM(Mは自然数)番目の値以下の値の平均値、または他の最大値からM番目の値以下の値から算出される代表値信号の少なくとも1つをスミア信号を含む近似暗電流信号として算出するか、または、遮光時の前記第1の取得部で取得した有効画素から出力される信号と遮光時の前記第2の取得部で取得した遮光した画素から出力される信号とを記憶する第一の手段(全画素メモリ)と前記第2の取得部で取得した遮光した画素から出力される信号の複数ラインの上部及び下部の遮光した画素の平均値を算出する手段とを有し、前記記憶第一手段に暗電流の基準値を記憶し前記第2の取得部で取得した遮光した画素から出力される信号の複数ラインの上部及び下部の遮光した画素の平均値を算出し上部及び下部の遮光した画素の基準値との比を前記記憶第一手段の暗電流の基準値にかけて近似暗電流信号を算出するか、または、遮光時の前記第1の取得部で取得した有効画素から出力される信号と遮光時の前記第2の取得部で取得した遮光した画素から出力される信号とを記憶する第一の手段(全画素メモリ)を有し、前記記憶第一手段に暗電流の基準値を記憶し前記第2の取得部で取得した遮光した画素から出力される信号の最小値を算出し前記記憶第一手段の遮光した画素の基準値の最小値との比を前記記憶第一手段の暗電流の基準値にかけて近似暗電流信号を算出するかの少なくとも一方を算出し、該算出した信号を前記固体撮像装置の出力映像信号の制御に用いることを特徴とする撮像方法である。   In the above, the Nth value (N is a natural number) from the minimum value of each vertical pixel signal of the plurality of lines of the signal output from the shielded pixel acquired by the second acquisition unit, and M (M Is a natural number) Whether to calculate at least one representative value signal calculated from an average value less than the first value or a value less than the Mth value from other maximum values as an approximate dark current signal including a smear signal Or a first signal storing a signal output from the effective pixel acquired by the first acquisition unit at the time of light shielding and a signal output from the light-shielded pixel acquired by the second acquisition unit at the time of light shielding. Means (all pixel memory) and means for calculating an average value of light-shielded pixels at the upper and lower parts of a plurality of lines of signals output from the light-shielded pixels acquired by the second acquisition unit, The dark current reference value is stored in one means, and The average value of the upper and lower light-shielded pixels of a plurality of lines of signals output from the light-shielded pixels acquired by the second acquisition unit is calculated, and the ratio between the upper and lower light-shielded pixel reference values is stored in the memory The approximate dark current signal is calculated over the dark current reference value of one means, or the signal output from the effective pixel obtained by the first obtaining unit at the time of light shielding and the second obtaining unit at the time of light shielding. The first means (all pixel memory) for storing the acquired signal output from the shielded pixel is stored, the dark current reference value is stored in the first storage means, and acquired by the second acquisition unit. The minimum value of the signal output from the light-shielded pixel is calculated, and the approximate dark current signal is obtained by multiplying the ratio of the light-shielded pixel reference value of the storage first means with the dark current reference value of the storage first means. Calculate at least one of the calculated values and the calculated signal Is used for controlling an output video signal of the solid-state imaging device.

さらに上記において、前記固体撮像素子と、12bit以上のA/Dと10bit以上の映像信号処理回路と14bit以上の全画素メモリとを有し、該全画素メモリに暗電流の基準値を記憶し、VOBの暗電流の現在の総量と基準VOBの暗電流の総量との比を暗電流増倍の近似値とし、前記第1の取得部で取得した有効画素から出力される映像信号の高レベルを伸長してから前記代表値信号から前記代表値信号と画面メモリの基準の有効画素の暗電流と基準VOBの暗電流との差分に暗電流増倍の近似値を乗算した値を減算し、白圧縮した10bitの映像信号を前記映像信号処理回路で信号処理することを特徴とする撮像装置である。   Further, in the above, the solid-state imaging device, A / D of 12 bits or more, a video signal processing circuit of 10 bits or more, and an all pixel memory of 14 bits or more, and a dark current reference value is stored in the all pixel memory, The ratio of the current total amount of dark current of the VOB and the total amount of dark current of the reference VOB is an approximate value of dark current multiplication, and the high level of the video signal output from the effective pixel acquired by the first acquisition unit is After decompression, a value obtained by multiplying the difference between the representative value signal, the dark current of the reference effective pixel of the screen memory and the dark current of the reference VOB by the approximate value of dark current multiplication is subtracted from the representative value signal, and white An image pickup apparatus, wherein a compressed 10-bit video signal is signal-processed by the video signal processing circuit.

また、上記において、前記固体撮像素子と雑音低減回路と雑音低減回路の基準電圧をオフセットさせる手段と、10bit以上のA/Dと10bit以上の映像信号処理回路と13+Nbitの全画素メモリとを有し、該全画素メモリに暗電流の基準値を記憶し、VOBの暗電流の現在の代表値と基準VOBの暗電流の代表値との比を暗電流増倍の近似値とし、VOBの暗電流の現在の代表値分、雑音低減回路の基準電圧をオフセットさせ(て映像信号からVOBの暗電流の現在の総量を減算し)、VOBの暗電流の現在の総量分の高輝度圧縮も考慮してVOBの暗電流の現在の総量分の基準電圧のオフセットを基準に映像信号の高輝度を伸長し、信号処理することを特徴とする撮像装置である。   In the above, the solid-state imaging device, the noise reduction circuit, a means for offsetting the reference voltage of the noise reduction circuit, an A / D of 10 bits or more, a video signal processing circuit of 10 bits or more, and a 13 + Nbit all-pixel memory. The dark current reference value is stored in all the pixel memories, and the ratio between the current representative value of the VOB dark current and the representative value of the dark current of the reference VOB is an approximation of the dark current multiplication, and the dark current of the VOB The reference voltage of the noise reduction circuit is offset by the current representative value (subtracting the current total amount of VOB dark current from the video signal), and high luminance compression corresponding to the current total amount of VOB dark current is also considered. The image pickup apparatus is characterized in that the high luminance of the video signal is expanded and signal-processed based on the offset of the reference voltage corresponding to the current total amount of dark current of the VOB.

また、雑音低減回路と雑音低減回路の基準電圧を画素単位で可変オフセットさせる手段と、10bit以上のA/Dと映像信号処理回路と14bit以上の全画素メモリとを有し、該全画素メモリに暗電流の基準値を記憶し、VOBの暗電流の現在の代表値と基準VOBの暗電流の代表値との比を暗電流増倍の近似値とし、前記雑音低減回路の基準電圧を全画素の暗電流の現在の近似値分オフセットさせて(映像信号から全画素の暗電流の現在の近似値分を減算し)、全画素の暗電流の現在の近似値の高輝度圧縮も考慮して全画素の暗電流の現在の近似値を基準に映像信号の高輝度を伸長し、信号処理することを特徴とする撮像装置である。   Further, the noise reduction circuit, means for variably offsetting the reference voltage of the noise reduction circuit in units of pixels, an A / D of 10 bits or more, a video signal processing circuit, and an all pixel memory of 14 bits or more are provided. The dark current reference value is stored, and the ratio of the current representative value of the VOB dark current and the representative value of the dark current of the reference VOB is an approximation of dark current multiplication, and the reference voltage of the noise reduction circuit is set to all pixels. Offset by the current approximate value of the dark current (subtract the current approximate value of the dark current of all pixels from the video signal) and also consider high-intensity compression of the current approximate value of the dark current of all pixels An image pickup apparatus is characterized in that a high luminance of a video signal is expanded and signal processing is performed based on a current approximate value of dark current of all pixels.

また、光学系と固体撮像素子と該固体撮像素子の受光面の有効画素から出力される映像信号を取得する第1の取得部と前記固体撮像素子の受光面の上部または下部の遮光した画素から出力される信号を取得する第2の取得部とを有する固体撮像装置において、前記第2の取得部で取得した遮光した画素から出力される信号の複数ラインの各垂直画素信号の最小値からN(Nは自然数)番目の値、最大値からM(Mは自然数)番目の値以下の値の平均値、または他の最大値からM番目の値以下の値から算出される代表値信号の少なくとも1つを算出し、該代表値信号が所定以上のレベルになったら前記光学系に備えた(光学絞りや可変NDフィルタ等の)光学減衰手段で入射光を光学減衰することと固体撮像素子のフォトダイオードの信号電荷電子をオーバーフロードレインに掃き捨てる(電子シャッタを行う)こととの少なくとも一方を行うことを特徴とする撮像方法である。   Further, the optical system, the solid-state imaging device, a first acquisition unit that acquires a video signal output from an effective pixel on the light-receiving surface of the solid-state imaging device, and light-shielded pixels above or below the light-receiving surface of the solid-state imaging device In a solid-state imaging device having a second acquisition unit that acquires a signal to be output, N is determined from the minimum value of each vertical pixel signal of a plurality of lines of signals output from the light-shielded pixels acquired by the second acquisition unit. (N is a natural number) th value, at least a representative value signal calculated from an average value less than the Mth (M is a natural number) value from the maximum value, or a value less than the Mth value from other maximum values One is calculated, and when the representative value signal reaches a predetermined level or higher, the optical attenuation means (such as an optical diaphragm or a variable ND filter) provided in the optical system optically attenuates the incident light, and the solid-state image sensor Photodiode signal charge Swept the child into the overflow drain is an imaging method which is characterized in that at least one of the (electronic shutter performs) that.

上記の様に本発明によれば、CCD撮像素子から出力される映像信号の白つぶれまたは黒レベル付近の偽信号または黒レベル以下への沈みこみまたは過飽和レベルの白を低減するなどの映像信号の階調範囲を拡大される。   As described above, according to the present invention, the video signal output from the CCD image pickup device is whitened, false signals near the black level, sinking below the black level, or white of the supersaturated level is reduced. The gradation range is expanded.

有効画素の信号の高輝度の圧縮を伸長してV−OBが3ライン以上で最小値から2番目の値(3ラインで中央値)を減算する場合の本発明の一実施例の全体構成の撮像装置を示すブロック図The overall configuration of an embodiment of the present invention in the case where the high-intensity compression of the effective pixel signal is expanded to subtract the second value (the median value in 3 lines) from the minimum value when V-OB is 3 lines or more. Block diagram showing imaging device 有効画素の信号の高輝度の圧縮を伸長してV−OBが5ライン以上で最小値から3番目の値(5ラインで中央値)を減算する場合の本発明の一実施例の全体構成の撮像装置を示すブロック図The overall configuration of an embodiment of the present invention in the case where the high-intensity compression of the signal of the effective pixel is expanded to subtract the third value (the median value in 5 lines) from the minimum value when V-OB is 5 lines or more. Block diagram showing imaging device 有効画素の信号の高輝度の圧縮を伸長してV−OBが2ライン以上で最小値でデジタルAGC(Digital AGC))を用いて減算する場合の本発明の一実施例の全体構成の撮像装置を示すブロック図An image pickup apparatus having an overall configuration according to an embodiment of the present invention in which high-intensity compression of a signal of an effective pixel is expanded and V-OB is subtracted using a digital AGC (Digital AGC) with a minimum value of 2 lines or more Block diagram showing 有効画素の信号の高輝度の圧縮を伸長してV−OBが3ライン以上で最大値除く平均値を減算する場合の本発明の一実施例の全体構成の撮像装置を示すブロック図The block diagram which shows the imaging device of the whole structure of one Example of this invention in the case of decompressing the high-intensity compression of the signal of an effective pixel and subtracting the average value excluding the maximum value when V-OB is 3 lines or more 有効画素の信号の高輝度の圧縮を伸長してV−OBが4ライン以上で最大値と最小値除く平均値を減算する場合の本発明の一実施例の全体構成の撮像装置を示すブロック図The block diagram which shows the imaging device of the whole structure of one Example of this invention when decompressing the high-intensity compression of the signal of an effective pixel, and subtracting the average value except the maximum value and the minimum value when V-OB is 4 lines or more 有効画素の信号の高輝度の圧縮を伸長してV−OBが4ライン以上で最大値と2番目に大きい値除く平均値の場合の本発明の一実施例の全体構成の撮像装置を示すブロック図A block showing an image pickup apparatus having an overall configuration according to an embodiment of the present invention in which high-intensity compression of a signal of an effective pixel is expanded and V-OB is an average value excluding the maximum value and the second largest value at 4 lines or more Figure 有効画素の信号の高輝度の圧縮を伸長してV−OBが3ライン以上で最小値から2番目の値(3ラインで中央値)と有効画素暗電流とを減算する場合の本発明の一実施例の全体構成の撮像装置を示すブロック図One embodiment of the present invention in which high-intensity compression of the effective pixel signal is expanded to subtract the second value from the minimum value (median value in three lines) and the effective pixel dark current when V-OB is 3 lines or more. The block diagram which shows the imaging device of the whole structure of an Example 有効画素の信号の高輝度の圧縮を伸長してV−OBが5ライン以上で最小値から3番目の値(5ラインで中央値)を減算する場合の本発明の一実施例の全体構成の撮像装置を示すブロック図The overall configuration of an embodiment of the present invention in the case where the high-intensity compression of the signal of the effective pixel is expanded to subtract the third value (the median value in 5 lines) from the minimum value when V-OB is 5 lines or more. Block diagram showing imaging device 有効画素の信号の高輝度の圧縮を伸長してV−OBが2ライン以上で最小値でデジタルAGC(Digital AGC))を用いて減算する場合の本発明の一実施例の全体構成の撮像装置を示すブロック図An image pickup apparatus having an overall configuration according to an embodiment of the present invention in which high-intensity compression of a signal of an effective pixel is expanded and V-OB is subtracted using a digital AGC (Digital AGC) with a minimum value of 2 lines or more Block diagram showing 有効画素の信号の高輝度の圧縮を伸長してV−OBが3ライン以上で最大値除く平均値を減算する場合の本発明の一実施例の全体構成の撮像装置を示すブロック図The block diagram which shows the imaging device of the whole structure of one Example of this invention in the case of decompressing the high-intensity compression of the signal of an effective pixel and subtracting the average value excluding the maximum value when V-OB is 3 lines or more 有効画素の信号の高輝度の圧縮を伸長してV−OBが4ライン以上で最大値と最小値除く平均値を減算する場合の本発明の一実施例の全体構成の撮像装置を示すブロック図The block diagram which shows the imaging device of the whole structure of one Example of this invention when decompressing the high-intensity compression of the signal of an effective pixel, and subtracting the average value except the maximum value and the minimum value when V-OB is 4 lines or more 有効画素の信号の高輝度の圧縮を伸長してV−OBが4ライン以上で最大値と2番目に大きい値除く平均値を減算する場合の本発明の一実施例の全体構成の撮像装置を示すブロック図An image pickup apparatus having an overall configuration according to an embodiment of the present invention in which high-intensity compression of a signal of an effective pixel is expanded to subtract an average value excluding a maximum value and a second largest value when V-OB is 4 lines or more. Block diagram shown 有効画素の信号の高輝度の圧縮を伸長してV−OBが2ライン以上で最小値を用いて暗電流増倍の近似値算出し、V−OB最小値と有効画素の暗電流とを減算する場合の本発明の一実施例の全体構成の撮像装置を示すブロック図High-intensity compression of the effective pixel signal is expanded to calculate an approximate value of dark current multiplication using the minimum value when V-OB is 2 lines or more, and the V-OB minimum value is subtracted from the effective pixel dark current. The block diagram which shows the imaging device of the whole structure of one Example of this invention when doing 有効画素の信号のV−OBが2ライン以上で最小値を用いて暗電流増倍の近似値算出し、V−OB最小値と有効画素の暗電流とを減算し、V−OB最小値と有効画素の暗電流に応じて高輝度の圧縮を伸長する場合の本発明の一実施例の全体構成の撮像装置を示すブロック図When the effective pixel signal V-OB is 2 lines or more, the approximate value of the dark current multiplication is calculated using the minimum value, and the V-OB minimum value and the effective pixel dark current are subtracted to obtain the V-OB minimum value. The block diagram which shows the imaging device of the whole structure of one Example of this invention in the case of extending | stretching high-intensity compression according to the dark current of an effective pixel 有効画素の信号のV−OBの最小値から2番目を用いて暗電流増倍の近似値算出し、V−OB最小値から2番目と有効画素の暗電流とを減算し、V−OB最小値から2番目と有効画素の暗電流に応じて高輝度の圧縮を伸長する場合の本発明の一実施例の全体構成の撮像装置を示すブロック図An approximate value of dark current multiplication is calculated using the second from the minimum value of V-OB of the effective pixel signal, the second and the dark current of the effective pixel are subtracted from the minimum value of V-OB, and the minimum of V-OB is obtained. The block diagram which shows the imaging device of the whole structure of one Example of this invention in the case of extending | stretching high-intensity compression according to the dark current of the 2nd and effective pixel from a value 有効画素の信号のV−OBが2ライン以上で最小値を用いて暗電流増倍の近似値算出し、V−OB最小値と有効画素の暗電流とを減算し、V−OB最小値と有効画素の暗電流に応じて高輝度の圧縮を伸長する場合の本発明の一実施例の全体構成の撮像装置を示すブロック図When the effective pixel signal V-OB is 2 lines or more, the approximate value of the dark current multiplication is calculated using the minimum value, and the V-OB minimum value and the effective pixel dark current are subtracted to obtain the V-OB minimum value. The block diagram which shows the imaging device of the whole structure of one Example of this invention in the case of extending | stretching high-intensity compression according to the dark current of an effective pixel 画素信号の高輝度の圧縮を伸長してV−OBが3ライン以上で最小値から2番目を用いて過飽和信号を算出する場合の本発明の一実施例の全体構成の撮像装置を示すブロック図The block diagram which shows the imaging device of the whole structure of one Example of this invention in the case of decompressing the high-intensity compression of a pixel signal and calculating a supersaturation signal using 2nd from the minimum value when V-OB is 3 lines or more 画素信号のV−OBが4ライン以上で最大値と2番目に大きい値除く平均値を用いて過飽和信号を算出する場合の本発明の一実施例の全体構成の撮像装置を示すブロック図The block diagram which shows the imaging device of the whole structure of one Example of this invention in the case of calculating a supersaturation signal using the average value except the maximum value and the 2nd largest value when V-OB of a pixel signal is 4 lines or more V−OBの最小値から2番目の値を代表値として検出する本発明の一実施例のフローチャートFlowchart of an embodiment of the present invention for detecting the second value from the minimum value of V-OB as a representative value V−OBの最小値から3番目の値を代表値として検出する本発明の一実施例のフローチャートFlowchart of an embodiment of the present invention for detecting the third value from the minimum value of V-OB as a representative value V−OBの最小値を代表値として検出する本発明の一実施例のフローチャートFlowchart of an embodiment of the present invention for detecting the minimum value of V-OB as a representative value V−OBの最大値を除く平均値を代表値として検出する本発明の一実施例のフローチャートThe flowchart of one Example of this invention which detects the average value except the maximum value of V-OB as a representative value V−OBの最大値と最小値を除く平均値を代表値として検出する本発明の一実施例のフローチャートThe flowchart of one Example of this invention which detects the average value except the maximum value and minimum value of V-OB as a representative value V−OBの最大値と2番目に大きい値を除く平均値を代表値として検出するフローチャートA flowchart for detecting an average value excluding the maximum value of V-OB and the second largest value as a representative value. 本発明の1実施例や従来技術でのV−OBでのスミアを含んだ暗電流値の検出を示す模式表図図3のA,図3のDはV−OBが3ラインの場合、図3のBはV−OBが5ラインの場合、図3のCは、V−OBが2ラインの場合、図3のE、図3のFはV−OBが4ラインの場合Schematic table showing detection of dark current value including smear in V-OB in one embodiment of the present invention and in the prior art FIG. 3A and FIG. 3D are diagrams in the case where V-OB is 3 lines. 3 B is when V-OB is 5 lines, C in FIG. 3 is when V-OB is 2 lines, E in FIG. 3 and F in FIG. 3 are when V-OB is 4 lines 本発明の1実施例や従来技術でのV−OBでのスミアを含んだ暗電流値の検出を示す画面の模式図図4のA、図4のDはV−OBが3ラインの場合、図4のBはV−OBが5ラインの場合、図4のCはV−OBが2ラインの場合、図4のE、図4のFはV−OBが4ラインの場合Schematic diagram of screen showing detection of dark current value including smear in V-OB in one embodiment of the present invention or in the prior art FIG. 4A, FIG. 4D is a case where V-OB is 3 lines, 4B shows a case where V-OB is 5 lines, FIG. 4C shows a case where V-OB is 2 lines, FIG. 4E shows a case where F-FIG. 4F shows a case where V-OB is 4 lines. 本発明の1実施例や従来技術での暗電流を含んだ信号値を示すEM−CCDの入出力の模式図((a)CMG振幅低低増倍時、(b)CMG振幅中中増倍時、(c)CMG振幅高高増倍時、(d)CMG振幅低低増倍時蓄積時)Schematic diagram of input / output of EM-CCD showing signal value including dark current in one embodiment of the present invention and in the prior art ((a) CMG amplitude at low / high multiplication, (b) Medium multiplication in CMG amplitude (C) When the CMG amplitude is increased or decreased, (d) When the CMG amplitude is increased or decreased) 本発明の1実施例の暗電流を含んだ信号値の伸長を示す補正途中の入出力の模式図((a)CMG振幅低低増倍時、(b)CMG振幅中中増倍時、(c)CMG振幅高高増倍時、(d)CMG振幅低低増倍時蓄積時)Schematic diagram of input / output during correction showing expansion of signal value including dark current according to one embodiment of the present invention ((a) at the time of CMG amplitude low / high multiplication, (b) at the time of medium multiplication of CMG amplitude, ( c) When CMG amplitude is multiplied by high and low (d) When accumulating when CMG amplitude is low and high 本発明の1実施例の伸長後の信号から暗電流を減算した値を示す補正後EM−CCDの入出力の模式図((a)CMG振幅低低増倍時、(b)CMG振幅中中増倍時、(c)CMG振幅高高増倍時、(d)CMG振幅低低増倍時蓄積時)Schematic diagram of corrected EM-CCD input / output showing the value obtained by subtracting the dark current from the expanded signal of one embodiment of the present invention ((a) When CMG amplitude is low / low multiplication, (b) Medium CMG amplitude (C) CMG amplitude high and high multiplication, (d) CMG amplitude low and low multiplication accumulation) 本発明の1実施例での有効画素の光源によるCCD出力レベルと白キズのないV−OBスミアレベル比例の補正を示す入射光とCCD出力レベルの模式図Schematic diagram of incident light and CCD output level showing correction of proportionality of CCD output level by effective light source and V-OB smear level without white defect in one embodiment of the present invention 本発明の1実施例での有効画素の光源によるCCD出力レベルと白キズのあるV−OBスミアレベル比例の破綻を示す入射光とCCD出力レベルの模式図Schematic diagram of incident light and CCD output level showing breakdown of proportionality between CCD output level due to light source of effective pixel and V-OB smear level with white defect in one embodiment of the present invention 本発明の1実施例での有効画素のブルーミング光源によるCCD出力レベルと白キズのないV−OBスミアレベルからの近似を示す入射光とCCD出力レベルの模式図Schematic diagram of incident light and CCD output level showing approximation from CCD output level of effective pixel blooming light source and V-OB smear level without white defect in one embodiment of the present invention

本発明による撮像装置の一実施例の図1A−図1Rと特許文献3の特開2008−109639の撮像装置の一実施例との相違は、白伸長部の101と、bit制限部の102と、加算器の104と減算器の105と除算器の106と乗算器の107と平均部の108と、基準メモリ部の109と、画面メモリ部の110とがあることである。bit制限部の102は、上位bit廃棄または除算部または白再圧縮部であり、映像信号処理回路7の入力bit数に合わせる。そのため、市販されている画素単位で高輝度部分と低輝度部分と別の階調補正を行い映像の階調範囲を拡大するICも映像信号処理ICも映像信号処理部7に用いることができる。映像信号処理部7の内部処理階調数が多ければbit制限部の102は映像信号処理部7の出力側で、一般に送用10bitで産業用8bitの出力映像信号の諧調数に合わせる。圧縮補正部5と暗電流スミア検出部6とbit制限部102と映像信号処理部7とは、映像専用のメモリ集積DSPや、FPGAに集積することもできる。   1A to 1R of an embodiment of the image pickup apparatus according to the present invention and the embodiment of the image pickup apparatus disclosed in Japanese Patent Application Laid-Open No. 2008-109639 of Japanese Patent Application Laid-Open No. 2008-109639 are as follows. There are an adder 104, a subtractor 105, a divider 106, a multiplier 107, an average unit 108, a reference memory unit 109, and a screen memory unit 110. A bit limiter 102 is a high-order bit discard or division unit or a white recompression unit that matches the number of input bits of the video signal processing circuit 7. For this reason, both an IC and a video signal processing IC for expanding the gradation range of a video by performing gradation correction separately for a high luminance part and a low luminance part in a commercially available pixel unit can be used for the video signal processing unit 7. If the number of internal processing gradations of the video signal processing unit 7 is large, the bit limiting unit 102 is on the output side of the video signal processing unit 7 and is generally adjusted to the tone number of the output video signal of 10 bits for transmission and 8 bits for industrial use. The compression correction unit 5, the dark current smear detection unit 6, the bit restriction unit 102, and the video signal processing unit 7 can be integrated in a video-only memory integrated DSP or FPGA.

本発明による映像信号の圧縮が伸長されてから暗電流や暗電流レベルが異常に高い白キズと呼ばれる画素の暗電流や垂直スミアが減算される動作を本発明の1実施例や従来技術での暗電流を含んだ信号値を示すEM−CCDの入出力の模式図の図5と、本発明の1実施例の暗電流を含んだ信号値の伸長を示す補正途中の入出力の模式図の図6と、本発明の1実施例の伸長後の信号から暗電流を減算した値を示す補正後EM−CCDの入出力の模式図の図7とを用いて説明する。   The operation of subtracting the dark current and the vertical smear of the pixel called white scratches, which are abnormally high in dark current and dark current level after the compression of the video signal according to the present invention is extended, is performed in one embodiment of the present invention and in the prior art. FIG. 5 is a schematic diagram of input / output of the EM-CCD showing a signal value including dark current, and FIG. 5 is a schematic diagram of input / output during correction indicating expansion of the signal value including dark current according to one embodiment of the present invention. A description will be given with reference to FIG. 6 and FIG. 7 which is a schematic diagram of the input / output of the post-correction EM-CCD showing the value obtained by subtracting the dark current from the expanded signal of one embodiment of the present invention.

暗電流を含んだ信号値を示すEM−CCDの入出力の模式図の図5において、(a)CMG振幅低低増倍時はフォトダイオードや垂直転送路の転送容量不足で画面内で不均一に高信号レベルが飽和する。(b)CMG振幅中中増倍時は垂直転送後に信号が増倍されるため、フォトダイオードや垂直転送路の転送容量不足が補われ、暗電流を低減する電子冷却と組み合わせれば映像の階調範囲が拡大する。さらにフォトダイオードの蓄積容量のばらつきで、画面内で不均一だった映像の階調範囲が画面内で均一になるに従い、CCD撮像素子から出力される暗電流や映像信号が高レベルになり圧縮されたら圧縮を伸長してから暗電流や暗電流レベルが異常に高い白キズと呼ばれる画素の暗電流や垂直スミアを減算する。
(c)CMG振幅高高増倍時でさらに電子増倍が高くなり、暗電流や暗電流レベルが異常に高い白キズと呼ばれる画素の暗電流や垂直スミアまでが高レベルになり圧縮されたら、暗電流や暗電流レベルが異常に高い白キズと呼ばれる画素の暗電流や垂直スミアや映像信号の圧縮を伸長して圧縮を伸長された映像信号から減算する。ちなみに、(d)CMG振幅低低増倍時蓄積時は、画面内で不均一に高信号レベルが飽和する。
In FIG. 5 of the schematic diagram of the input / output of the EM-CCD showing the signal value including the dark current, (a) When the CMG amplitude is low / low multiplication, the transfer capacity of the photodiode and the vertical transfer path is insufficient, resulting in unevenness in the screen High signal level is saturated. (B) Since the signal is multiplied after vertical transfer when the CMG amplitude is medium / multiple, the shortage of transfer capacity of the photodiode and vertical transfer path is compensated, and when combined with electronic cooling that reduces dark current, The adjustment range is expanded. Furthermore, due to variations in photodiode storage capacity, the dark current and video signal output from the CCD image sensor become high level and compressed as the gradation range of the image that was not uniform in the screen becomes uniform in the screen. Then, after decompression, the dark current and vertical smear of the pixel called white scratches are subtracted after dark current and dark current level are abnormally high.
(C) When the CMG amplitude is high and high, the electron multiplication is further increased, and the dark current and the vertical smear of the pixel called white scratches are high and compressed. The compression of the dark current, the vertical smear, and the video signal, which is called white scratches, where the dark current and the dark current level are abnormally high, is decompressed and the compression is subtracted from the decompressed video signal. By the way, (d) during accumulation when the CMG amplitude is low and low, the high signal level saturates unevenly within the screen.

本発明の1実施例の暗電流を含んだ信号値の伸長を示す補正途中の入出力の模式図の図6のように、CMG振幅に合わせて、高レベルの信号値を伸長して直線化してから、暗電流を減算すれば、本発明の1実施例の伸長後の信号から暗電流を減算した値を示す補正後EM−CCDの入出力の模式図の図7のように、直線化した映像信号が得られる。その後、直線的に除算したり、高レベルを圧縮したりして映像信号処理回路の入力bit数に合わせる。   As shown in FIG. 6 of the schematic diagram of the input / output during correction showing the expansion of the signal value including dark current according to one embodiment of the present invention, the high-level signal value is expanded and linearized in accordance with the CMG amplitude. Then, if the dark current is subtracted, the linearization is performed as shown in FIG. 7 in the schematic diagram of the input / output of the post-correction EM-CCD indicating the value obtained by subtracting the dark current from the expanded signal in one embodiment of the present invention. Video signal is obtained. Thereafter, linear division or high level compression is performed to match the number of input bits of the video signal processing circuit.

つぎに、本発明による撮像装置の一実施例の概要を、本発明の一実施例の全体構成の撮像装置を示すブロック図の図1A−図1Pと本発明の1実施例や従来技術でのV−OBでのスミア値の検出を示す画面の模式図の図4のA−図4のFとを用いて説明する。その後、本発明の幾つかの一実施例の動作を、本発明の一実施例の全体構成の撮像装置を示すブロック図の図1A−図1Pをと本発明の一実施例の代表値検出フローチャートの図2A−図2Fとを用いて説明する。   Next, an outline of an embodiment of the imaging apparatus according to the present invention is shown in FIGS. 1A to 1P of block diagrams showing an imaging apparatus having an overall configuration of an embodiment of the present invention and one embodiment of the present invention and the related art. This will be described with reference to FIG. 4A to FIG. 4F, which are schematic diagrams of screens showing detection of smear values in V-OB. Thereafter, the operation of some embodiments of the present invention, and the representative value detection flowchart of one embodiment of the present invention, as shown in FIGS. 2A to 2F of FIG.

電子増倍時は垂直転送後に信号が増倍されるため、フォトダイオードや垂直転送路の転送容量不足が補われ、暗電流を低減する電子冷却と組み合わせれば映像の階調範囲が拡大する。さらにフォトダイオードの蓄積容量のばらつきで、画面内で不均一だった映像の階調範囲が画面内で均一になるに従い、CCD撮像素子から出力される暗電流や映像信号が高レベルになり圧縮されたら白伸長部の101で圧縮を伸長してから暗電流や暗電流レベルが異常に高い白キズと呼ばれる画素の暗電流や垂直スミアを減算する。さらに電子増倍が高くなり、暗電流や白キズや垂直スミアまでが高レベルになり圧縮されたら、暗電流や白キズや垂直スミアを白伸長部の103で圧縮を伸長してから、白伸長部の101で圧縮を伸長した映像信号から減算する。   At the time of electron multiplication, the signal is multiplied after the vertical transfer, so that the shortage of the transfer capacity of the photodiode and the vertical transfer path is compensated, and when combined with electronic cooling that reduces the dark current, the gradation range of the image is expanded. Furthermore, due to variations in photodiode storage capacity, the dark current and video signal output from the CCD image sensor become high level and compressed as the gradation range of the image that was not uniform in the screen becomes uniform in the screen. Then, after the compression is expanded by the white expansion unit 101, the dark current and the vertical smear of the pixel called white scratches, which are abnormally high in dark current and dark current level, are subtracted. When the electron multiplication is further increased and the dark current, white scratches and vertical smear are at a high level and compressed, the dark current, white scratches and vertical smear are decompressed by the white stretcher 103 and then white stretched. 1 is subtracted from the decompressed video signal.

また、V―OBのH―OB部分には垂直スミアや水平スミアがほとんど混入しない暗電流や暗電流レベルが異常に高い白キズと呼ばれる画素の暗電流成分であることを利用し、V―OBのH―OB部分の信号を平均部の108で加算平均し、遮光した基準状態でV―OBのH―OB部分の信号を平均部の108で加算平均して基準メモリ部に記憶しておいた信号と比較すれば、温度と電子増倍による暗電流や暗電流レベルが異常に高い白キズと呼ばれる画素の暗電流成分の変化係数がリアルタイムで近似できる。別方法としては、V−OBの垂直水平の最小値からN番目は垂直スミアや水平スミアがほとんど混入しない暗電流成分であることを利用し、V−OBの垂直水平の最小値からN番目を検出し、基準メモリ部のV−OBの垂直水平の最小値からN番目と比較すれば、温度と電子増倍による暗電流や暗電流レベルが異常に高い白キズと呼ばれる画素の暗電流成分の変化係数がリアルタイムで近似できる。そこで、画面メモリ部の画面有効画素の暗電流や暗電流レベルが異常に高い白キズと呼ばれる画素の暗電流からV―OBのH―OB部分の信号の加算平均を減算した有効画素OB差分基準暗電流信号に温度と電子増倍による暗電流や暗電流レベルが異常に高い白キズと呼ばれる画素の暗電流成分の変化係数をかければ、OBとの差分の画面有効画素の暗電流や暗電流レベルが異常に高い白キズと呼ばれる画素の暗電流成分が近似できる。
つまり、V―OBの暗電流や暗電流レベルが異常に高い白キズと呼ばれる画素の暗電流や垂直スミア成分と、OBとの差分の画面有効画素の暗電流や暗電流レベルが異常に高い白キズと呼ばれる画素の暗電流成分とを減算し、画面有効画素の映像信号のみを算出できる。
Also, the V-OB uses the fact that the H-OB portion of the V-OB is a dark current component of a pixel called a white flaw, in which a vertical smear and a horizontal smear are hardly mixed and a dark current level is abnormally high. The signal of the H-OB part of the V-OB is added and averaged at the average part 108, and the signal of the H-OB part of the V-OB is added and averaged at the average part 108 in the shielded reference state and stored in the reference memory part. Compared with the received signal, the dark current component due to temperature and electron multiplication and the dark current component change coefficient of the dark current component of the pixel, which is abnormally high, can be approximated in real time. Another method is to use that the Nth from the vertical horizontal minimum value of the V-OB is a dark current component in which the vertical smear and the horizontal smear hardly mix, and the Nth from the vertical horizontal minimum value of the V-OB. If it is detected and compared with the Nth from the vertical and horizontal minimum value of V-OB of the reference memory unit, the dark current component of the pixel called a white scratch due to abnormally high dark current or dark current level due to temperature and electron multiplication The coefficient of change can be approximated in real time. Therefore, the effective pixel OB difference standard obtained by subtracting the addition average of the signals of the H-OB portion of the V-OB from the dark current of the pixel called the white defect whose dark current or dark current level of the screen effective pixel of the screen memory unit is abnormally high. If the dark current signal is multiplied by the dark current due to temperature and electron multiplication, or the dark current component change coefficient of the pixel called the white scratch, the dark current level is abnormally high. A dark current component of a pixel called a white scratch whose level is abnormally high can be approximated.
In other words, the dark current and vertical smear component of the pixel called white scratches, where the dark current and dark current level of V-OB are abnormally high, and the white current and the dark current level of the effective pixel of the screen that is the difference from OB are abnormally high. Only the video signal of the screen effective pixel can be calculated by subtracting the dark current component of the pixel called a scratch.

本発明の一実施例の全体構成の撮像装置を示すブロック図の図1A−図1Pにおいて、図1A−図1Fは有効画素の信号の高輝度の圧縮を伸長してV−OBの代表値を減算する場合であり、図1G−図1Mは有効画素の信号の高輝度の圧縮を伸長してV−OBの代表値と有効画素の暗電流の近似値とを減算する場合であり、具体的にはスミアを含むV−OBの代表値と有効画素の暗電流の近似値の差分と合計の信号の高輝度の圧縮を伸長して減算する。
スミアを含むV−OBの代表値として、図1Aと図1Gと図1Mと図1Nと図1Oと図1PとはV−OBが3ライン以上で最小値から2番目の値(3ラインで中央値)を検出する場合で、図1Bと図1HとはV−OBが5ライン以上で最小値から3番目の値(5ラインで中央値)を検出する場合で、図1Cと図1IとはV−OBが2ライン以上で最小値を検出しデジタルAGCする場合で、図1Dと図1JとはV−OBが3ライン以上で最大値除く平均値を検出する場合で、図1Eと図1KとはV−OBが4ライン以上で最大値と最小値除く平均値を検出する場合で、図1Fと図1LとはV−OBが4ライン以上で最大値と2番目に大きい値除く平均値を検出する場合である。また、OB暗電流の算出方法として、図1Aから図1MがV−OBのH−OBの平均を算出し、図1NがV−OBの最小値を算出し、図1OがV−OBの最小値から2番目を算出している。スミアの算出方法とOB暗電流の算出方法の組み合わせは、図1Aから図1Pに限らない。
1A to 1P, which are block diagrams showing an image pickup apparatus having an overall configuration according to an embodiment of the present invention, FIG. 1A to FIG. 1F show a representative value of V-OB by expanding high-intensity compression of an effective pixel signal. FIG. 1G to FIG. 1M show a case where the high-intensity compression of the effective pixel signal is expanded to subtract the representative value of V-OB and the dark current approximate value of the effective pixel. The difference between the representative value of V-OB including smear and the approximate value of dark current of effective pixels and the high-intensity compression of the total signal are expanded and subtracted.
As representative values of V-OB including smear, FIGS. 1A, 1G, 1M, 1N, 1O, and 1P show that V-OB is 3 lines or more and the second value from the minimum value (center of 3 lines). 1B and FIG. 1H are the cases where V-OB is 5 lines or more and the third value from the minimum value (the median value in 5 lines) is detected, and FIG. 1C and FIG. FIG. 1D and FIG. 1J show a case where the average value excluding the maximum value is detected when V-OB is 3 lines or more, and FIG. 1E and FIG. Is the case where the average value excluding the maximum and minimum values is detected when the V-OB is 4 lines or more. FIGS. 1F and 1L are the average values excluding the maximum value and the second largest value when the V-OB is 4 lines or more. Is detected. As a method for calculating the OB dark current, FIGS. 1A to 1M calculate the average of H-OB of V-OB, FIG. 1N calculates the minimum value of V-OB, and FIG. 1O shows the minimum of V-OB. The second is calculated from the value. The combination of the smear calculation method and the OB dark current calculation method is not limited to FIGS. 1A to 1P.

本発明の一実施例の代表値検出フローチャートの図2A−図2Fにおいて、図2AはV−OB最小値から2番目の値を検出する場合で、図2BはV−OB最小値から3番目の値を検出する場合で、図2CはV−OB最小値を検出する場合で、図2DはV−OBが最大値除く平均値を検出する場合で、図2EはV−OB最大値と最小値除く平均値を検出する場合で、図2FはV−OB最大値と2番目に大きい値を除く平均値を検出する場合である。
本発明の一実施例の全体構成の撮像装置を示すブロック図の図1A―図1Mの特徴は、比較部とラインメモリ部とにより、最大値または2番目に大きい値を除きCCD撮像素子の白キズの影響を削除している事である。
2A to 2F of the representative value detection flowchart of one embodiment of the present invention, FIG. 2A is a case where the second value is detected from the V-OB minimum value, and FIG. 2B is a third value from the V-OB minimum value. FIG. 2C shows a case where the V-OB minimum value is detected, FIG. 2D shows a case where the V-OB detects an average value excluding the maximum value, and FIG. 2E shows a V-OB maximum value and minimum value. FIG. 2F shows a case where the average value excluding the V-OB maximum value and the second largest value is detected.
1A to 1M of the block diagrams showing the image pickup apparatus having the overall configuration of an embodiment of the present invention are characterized in that the white value of the CCD image pickup element is excluded by the comparison unit and the line memory unit except for the maximum value or the second largest value. The effect of scratches is deleted.

本発明の1実施例や従来技術でのV−OBでのスミア値の検出を示す画面の模式図の図4のA−図の4Fと本発明の1実施例や従来技術でのV−OBでのスミア値の検出を示す模式表図の図3のA,B,C,D,E,Fがそれぞれ図1A,図1B,図1C,図1D,図1E,図1Fに対応している。図1A、図1DはV−OBが3ラインで、図1BはV−OBが5ラインで、図1CはV−OBが2ラインで、図1E、図1FはV−OBが4ラインである。なお、図4のA―図4のFは画面の模式図であり、CCD撮像面は、画面と上下左右が反転している。   4A of FIG. 4 of the schematic diagram of the screen showing the detection of the smear value in the V-OB in one embodiment of the present invention or in the prior art and the V-OB in one embodiment or the prior art of the present invention. 3, A, B, C, D, E, and F in the schematic table diagram showing smear value detection correspond to FIGS. 1A, 1B, 1C, 1D, 1E, and 1F, respectively. . 1A and 1D have 3 lines for V-OB, FIG. 1B has 5 lines for V-OB, FIG. 1C has 2 lines for V-OB, and FIGS. 1E and 1F have 4 lines for V-OB. . 4A to 4F are schematic views of the screen, and the CCD image pickup surface is vertically and horizontally reversed from the screen.

図3のCのようにV−OBが2ラインの中に信号値21の暗電流レベルが異常に高い白キズと呼ばれる画素の暗電流があると、平均値は11.5と特に大きく、スミア補正で誤差が特に大きいことが判る(以下、本実施例では暗電流レベルが異常に高い白キズと呼ばれる画素の暗電流と判定される最大信号値のレベルを21として説明を続ける)。図3のA、図3のDのようにV−OBが3ラインの中に信号値21の白キズがあると、平均値は9となり、中央値4や最大値を除く平均値3から大きく異なる値である。図3のE、図3のFのように、V−OBが4ラインの中に信号値21の暗電流レベルが異常に高い白キズと呼ばれる画素の暗電流があると、平均値は8となり、最大値を除く平均値3.67から大きく異なる値である。図3のBのように、V−OBが5ラインの中に信号値21の暗電流レベルが異常に高い白キズと呼ばれる画素の暗電流があると、平均値は7となり、中央値4や最大値を除く平均値3.5から大きく異なる値である。よって、平均値はV−OBのライン数が少し多くなってもスミア補正で誤差が大きいことが判る。図3のA―図3のFでは、本実施例の最小値は2で、中央値や最大値を除く平均値より1から2小さいが、従来の平均値の7から11.5ほど大きな誤差がない。最小値はV−OBのライン数が2と少ない場合でも従来のV−OBが5ラインの平均値よりスミア補正の誤差が少なく、実用的なことが判る。   As shown in FIG. 3C, when there is a dark current of a pixel called white scratch in which the dark current level of the signal value 21 is abnormally high in two lines of V-OB, the average value is particularly large as 11.5. It can be seen that the error is particularly large in the correction (hereinafter, in this embodiment, the description will be continued assuming that the level of the maximum signal value that is determined as the dark current of the pixel called white scratch with an abnormally high dark current level is 21). As shown in FIG. 3A and FIG. 3D, if there are white scratches in the signal value 21 in the three lines of V-OB, the average value is 9, which is larger than the average value 3 excluding the median value 4 and the maximum value. It is a different value. As shown in E of FIG. 3 and F of FIG. 3, if there is a dark current of a pixel called white scratch in which the dark current level of the signal value 21 is abnormally high in 4 lines of V-OB, the average value becomes 8. The value is greatly different from the average value 3.67 excluding the maximum value. As shown in FIG. 3B, when there is a dark current of pixels called white scratches in which the dark current level of the signal value 21 is abnormally high in 5 lines of V-OB, the average value becomes 7, and the median 4 or It is a value greatly different from the average value 3.5 excluding the maximum value. Therefore, it can be seen that the average value has a large error in smear correction even if the number of V-OB lines is slightly increased. In FIG. 3A to FIG. 3F, the minimum value in this embodiment is 2, which is 1 to 2 smaller than the average value excluding the median value and the maximum value, but is larger than the conventional average value by 7 to 11.5. There is no. It can be seen that even when the number of V-OB lines is as small as two, the minimum value of the conventional V-OB has less smear correction error than the average value of five lines and is practical.

本発明の一実施例の全体構成の撮像装置を示すブロック図の図1A―図1Pにおいて、1は撮像装置、2は入射光を結像するレンズ等の光学系、3は光学系2から入射した光を電気信号に変換するEM−CCD等のCCD撮像素子、4はCCD撮像素子3から出力された信号から雑音を除去するCDSと暗電流補正と信号の利得を調整するAGCとデジタル映像信号Viに変換するADCからなるFEP(但し、図1Cや図1Eのように、AGCが、FEPに含まれない構成を用いてもよい。)、5はデジタル映像信号ViからのOB代表値信号を減算してスミア成分の補正を行う白圧縮補正部、6はデジタル映像信号ViのV−OBの代表値信号の検出を行うOB代表値検出部であり、21〜23はデジタル映像信号ViのV−OBラインの画素ごとに比較する比較部で、71〜76はOB代表値を記憶するラインメモリであり、11は映像信号から代表値信号を減算する減算器である。7は検出白圧縮補正部5から出力された信号Vmに種々の映像処理を施しNTSC(National Television System Committee)方式またはPAL(Phase Alternating by Line)方式の複合映像信号(Video Burst Sync以下VBS)またはSDI(Serial Digital Interface)映像信号、あるいはHDTVのSDI(HD−SDI)等の所定方式の映像信号に変換して出力する映像信号処理部、8はEM−CCD3の駆動および電子増倍の利得制御を行うためのCCD駆動部(または、TGと標記する)であり、EM―CCDを駆動するタイミング信号を生成するタイミングジェネレータ(TG)と、生成されたタイミング信号を駆動するドライバとを主に備えており、9は撮像装置1内の各部を制御するCPU(Central Processing Unit)である(CPUから各部への制御線は図示せず)。10は、デジタルAGC(D.AGC)であり、OB代表値信号をFEPのAGCの増幅度に合わせてD.AGC自身の増幅度を調節する。14は冷却部であり、温度を検出する温度センサと冷却するペルチェ素子とペルチェ素子駆動回路と放熱フィンとファンとファン駆動回路であり、EM−CCD3を冷却し温度を調節する。   1A to 1P, which are block diagrams illustrating an imaging apparatus having an overall configuration according to an embodiment of the present invention, 1 is an imaging apparatus, 2 is an optical system such as a lens that forms incident light, and 3 is incident from an optical system 2 A CCD image sensor such as an EM-CCD that converts the generated light into an electrical signal, 4 is a CDS that removes noise from the signal output from the CCD image sensor 3, an AGC that adjusts the dark current correction, and a gain of the signal, and a digital video signal FEP composed of ADC to convert to Vi (however, AGC may be used not included in FEP as shown in FIGS. 1C and 1E), 5 is an OB representative value signal from digital video signal Vi A white compression correction unit that subtracts and corrects smear components, 6 is an OB representative value detection unit that detects a V-OB representative value signal of the digital video signal Vi, and 21 to 23 are V of the digital video signal Vi. -OB line In comparison unit for comparing pixel by pixel, 71-76 is a line memory for storing the OB representative value, 11 is a subtracter for subtracting the representative value signal from the video signal. Reference numeral 7 denotes a composite video signal (hereinafter referred to as VBS) of NTSC (National Television System Committee) system or PAL (Phase Alternating by Line) system by performing various video processing on the signal Vm output from the detected white compression correction unit 5. An SDI (Serial Digital Interface) video signal or a video signal processing unit that converts the video signal into a predetermined video signal such as an HDTV SDI (HD-SDI) and outputs it. 8 is a drive for the EM-CCD 3 and gain control for electron multiplication. A CCD drive unit (or denoted as TG) for performing the above operation mainly includes a timing generator (TG) for generating a timing signal for driving the EM-CCD and a driver for driving the generated timing signal. 9 is a CPU (Central Processing Unit) for controlling each part in the imaging apparatus 1 (control lines from the CPU to each part are not shown) ). 10 is a digital AGC (D.AGC), in which the OB representative value signal is set in accordance with the amplification degree of the FEP AGC. Adjusts the amplification level of AGC itself. Reference numeral 14 denotes a cooling unit, which is a temperature sensor for detecting temperature, a Peltier element for cooling, a Peltier element driving circuit, a heat radiating fin, a fan, and a fan driving circuit, and cools the EM-CCD 3 to adjust the temperature.

次に、本発明の一実施例の動作を図1A―図1Fを参照しつつ説明する。撮像装置1のEM−CCD3(またはCCD3)は光学系2で受光面に結像された入射光をフォトダイオードで光電変換して信号電荷を生成し、垂直転送したのち水平転送しながら信号電荷を電子増倍してFEP4に出力する。FEP4はEM−CCD3から出力された信号から雑音を除去し暗電流成分を補正し補正した信号を増幅してデジタル映像信号Viに変換して白圧縮補正部5にデジタル映像信号Viを出力する。デジタル映像信号Viは、白圧縮補正部5を介してOB代表値検出部6に送られると共に、後述する信号処理を行うために減算器11にも送られる。OB代表値検出部6はデジタル映像信号Viを比較部21〜23でV−OBラインの垂直画素信号ごとに比較し小さい順にラインメモリ71〜76に記憶し、スミア成分としてOB代表値信号を検出する。
あるいは、図1D−図1Fに示す実施例のように、比較部21,22とラインメモリ72,75,76とを用いて所定の基準を満たすV−OBラインの垂直画素信号を選び、その選ばれた垂直画素信号を加算部13を用いて加算を行い、加算結果をラインメモリ71に記憶し、平均化部12で平均値としてのOB代表値信号を算出するように構成してよい。
Next, the operation of one embodiment of the present invention will be described with reference to FIGS. 1A to 1F. The EM-CCD 3 (or CCD 3) of the imaging device 1 photoelectrically converts incident light imaged on the light receiving surface by the optical system 2 with a photodiode to generate a signal charge, which is transferred vertically and then horizontally transferred. Electron multiplication and output to FEP4. The FEP 4 removes noise from the signal output from the EM-CCD 3, corrects the dark current component, amplifies the corrected signal, converts the signal to the digital video signal Vi, and outputs the digital video signal Vi to the white compression correction unit 5. The digital video signal Vi is sent to the OB representative value detection unit 6 via the white compression correction unit 5 and also sent to the subtractor 11 for signal processing to be described later. The OB representative value detection unit 6 compares the digital video signal Vi with the vertical pixel signals of the V-OB lines by the comparison units 21 to 23 and stores them in the line memories 71 to 76 in order of detection, and detects the OB representative value signal as a smear component. To do.
Alternatively, as in the embodiment shown in FIGS. 1D to 1F, the vertical pixel signal of the V-OB line that satisfies a predetermined standard is selected using the comparison units 21 and 22 and the line memories 72, 75, and 76, and the selection is made. The added vertical pixel signals may be added using the adding unit 13, the addition result may be stored in the line memory 71, and the averaging unit 12 may calculate an OB representative value signal as an average value.

白圧縮補正部5はOB代表値信号をFEPのAGCの増幅度に合わせてD.AGC10で増幅し、減算器11はその増幅した信号をデジタル映像信号Viから減算し、映像信号処理部7にデジタル映像信号Vmを出力する。映像信号処理部7はデジタル映像信号Vmに種々の映像処理を施し所定方式の映像信号Voに変換して出力する。
さらに、CCD駆動部(TG)8はCPU9から出力される制御信号(図示せず)に従ってEM−CCD3を駆動するための信号を出力する。図1Cや図1Eに示す実施例ではFEP4にAGCがないので、白圧縮補正部5でデジタル映像信号ViからOB代表値信号を減算してからのデジタルAGCをおこなうように構成されている。
また、図1A―図1Fで示す実施例において、FEP内にAGCが含まれていない実施例や、スミア補正部のD.AGCの配置場所が異なる実施例や、デジタル信号ViやVmのビット数やOB代表値信号のビット数が異なる実施例や、比較部やラインメモリ部の構成が異なる実施例等があるが、これらは一実施例にすぎず種々の構成が適用されてよい。
The white compression correction unit 5 adjusts the OB representative value signal in accordance with the amplification degree of the AGC of the FEP. Amplified by the AGC 10, the subtractor 11 subtracts the amplified signal from the digital video signal Vi and outputs the digital video signal Vm to the video signal processing unit 7. The video signal processing unit 7 performs various video processing on the digital video signal Vm, converts it into a video signal Vo of a predetermined system, and outputs it.
Further, the CCD drive unit (TG) 8 outputs a signal for driving the EM-CCD 3 in accordance with a control signal (not shown) output from the CPU 9. In the embodiment shown in FIGS. 1C and 1E, the FEP 4 has no AGC, so that the white compression correction unit 5 performs the digital AGC after subtracting the OB representative value signal from the digital video signal Vi.
Further, in the embodiment shown in FIGS. 1A to 1F, the FEP does not include AGC, and the smear correction unit D.D. There are examples in which the arrangement location of AGC is different, examples in which the number of bits of the digital signals Vi and Vm and the number of bits of the OB representative value signal are different, examples in which the configurations of the comparison unit and the line memory unit are different, etc. Is merely an example and various configurations may be applied.

次に、図1A−1Fと図2A−2Fと図3のA−図3のFと図4のA−図4のFとを用いて垂直スミア信号の検出と補正の動作について説明する。
まず、図1A、図2A、図3のA、図4のAに示す実施例について説明する。CPU9は、ラインメモリ部72、73に最小値信号の上限値、2番目に小さい信号の上限値をそれぞれ設定しておく。ここで、これらの上限値は、例えば、信号の輝度を数値化したものを用いてよい(以下で述べる各値についても、同様の基準で数値化されたものである)。比較部21は、ラインメモリ部72に記憶されている上限値とV−OB領域の1ライン目(以下V−OB1)の映像信号の画素の値とを各画素間で比較し、値が小さい方の信号(V−OB1の映像信号)を各画素の最小値の信号としてラインメモリ部72に記憶する(ステップ21,22)。比較部21は、V−OB2の映像信号の画素の値とラインメモリ部72に最小値の信号の値とを各画素間で比較し、値が小さい方の信号をラインメモリ部72に各画素の最小値の信号として記憶する。値が大きい方の信号は比較部22に送られる。比較部22は、大きい方の信号の値と2番目に小さい信号としてラインメモリ部73に記憶されている上限値とを各画素間で比較し、小さい方の信号を各画素の2番目に小さい信号としてラインメモリ部73に記憶する(ステップ23)。同様に、比較部21は、Nライン目(Nは3以上の自然数)のV−OBNの映像信号の画素の値とメモリ部72の最小値とを各画素間で比較し、値が小さい方の信号を各画素の最小値の信号としてラインメモリ部72に記憶する。値が大きい方の信号は各画素の比較1の信号として、比較部22に送られる(ステップ24)。比較部22は、2番目に小さい信号の値と比較1の信号の値とを各画素間で比較し、値が小さい方の信号を各画素の2番目に小さい信号としてラインメモリ部73に記憶する(ステップ25)。比較部22が最後のV−OBの比較処理を終了すると、ラインメモリ部73は、2番目に小さい信号をスミア補正用のOB代表値信号としてスミア補正部5に出力し(ステップ26)、代表値検出処理が終了する(ステップ27)。
Next, the vertical smear signal detection and correction operation will be described with reference to FIGS. 1A-1F, 2A-2F, A-3 in FIG. 3, F in FIG. 4, and A in FIG.
First, the embodiment shown in FIGS. 1A, 2A, 3A, and 4A will be described. The CPU 9 sets the upper limit value of the minimum value signal and the upper limit value of the second smallest signal in the line memory units 72 and 73, respectively. Here, as these upper limit values, for example, values obtained by quantifying the luminance of the signal may be used (each value described below is also quantified by the same standard). The comparison unit 21 compares the upper limit value stored in the line memory unit 72 with the pixel value of the video signal of the first line in the V-OB area (hereinafter referred to as V-OB1) between the pixels, and the value is small. The other signal (video signal of V-OB1) is stored in the line memory unit 72 as a minimum value signal of each pixel (steps 21 and 22). The comparison unit 21 compares the pixel value of the video signal of V-OB2 with the minimum signal value of the line memory unit 72 between the pixels, and the signal having the smaller value is stored in the line memory unit 72 for each pixel. Is stored as a minimum value signal. The signal having the larger value is sent to the comparison unit 22. The comparison unit 22 compares the value of the larger signal with the upper limit value stored in the line memory unit 73 as the second smallest signal between the pixels, and compares the smaller signal with the second smallest value of each pixel. The signal is stored in the line memory unit 73 as a signal (step 23). Similarly, the comparison unit 21 compares the pixel value of the V-OBN video signal of the Nth line (N is a natural number of 3 or more) with the minimum value of the memory unit 72, and the smaller value is obtained. Is stored in the line memory unit 72 as a minimum value signal of each pixel. The signal having the larger value is sent to the comparison unit 22 as a comparison 1 signal for each pixel (step 24). The comparison unit 22 compares the value of the second smallest signal and the value of the comparison 1 signal between the pixels, and stores the signal having the smaller value in the line memory unit 73 as the second smallest signal of each pixel. (Step 25). When the comparison unit 22 finishes the last V-OB comparison process, the line memory unit 73 outputs the second smallest signal to the smear correction unit 5 as an OB representative value signal for smear correction (step 26). The value detection process ends (step 27).

次に、図1B、図2B、図3のB、図4のBに示す実施例について説明する。CPU9は、ラインメモリ部72、73、74に最小値信号の上限値、2番目に小さい信号の上限値、3番目に小さい信号の上限値をそれぞれ設定しておく。比較部21は、ラインメモリ部72に記憶されている上限値とV−OB1の映像信号の画素の値とを各画素間で比較し、値が小さい方の信号(V−OB1の映像信号)を最小値の信号としてラインメモリ部72に記憶する(ステップ21,28)。比較部21は、最小値の信号の値とV−OB2の映像信号の画素の値とを各画素間で比較し、値が小さい方の信号を各画素の最小値の信号としてラインメモリ部72に記憶する(ステップ29)。比較部22は、大きい方の信号の値と各画素の2番目に小さい信号としてラインメモリ部73に記憶された上限値とを各画素間で比較し、値が小さい方の信号を2番目に小さい信号としてラインメモリ部73に記憶する(ステップ29)。比較部21は、ラインメモリ部72に記憶された信号の値とV−OB3の映像信号の値とを各画素間で比較し、値が小さい方の信号を各画素の最小値の信号としてラインメモリ部72に記憶する。値が大きい方の信号は、比較1の信号として、比較部23に送られる(ステップ30)。比較部22は、ラインメモリ部73に記憶されている2番目に小さい信号の値と比較1の信号とを各画素間で比較し、値が小さい方の信号を各画素の2番目に小さい信号としてラインメモリ部73に記憶する。比較部23は、値が大きい方の信号と3番目に小さい信号としてラインメモリ部74に記憶された上限値とを各画素間で比較し、値が小さい方の信号を各画素の3番目に小さい信号としてラインメモリ部74に記憶する(ステップ31)。同様に、Nライン目(Nは4以上の自然数)のV−OBNの映像信号の画素の値とラインメモリ部72の最小値とを各画素間で比較し、値が小さい方の信号を各画素の最小値の信号としてラインメモリ部72に記憶する。値が大きい方の信号は各画素の比較1の信号として、比較部22に送られる(ステップ24)。比較部22は、2番目に小さい信号の値と比較1の信号の値とを各画素間で比較し、値が小さい方の信号を各画素の2番目に小さい信号としてラインメモリ部73に記憶する。値が大きい方の信号は、各画素の比較2の信号として比較部23に送られる(ステップ32)。比較部23は、3番目に小さい信号の値と比較2の信号の値とを各画素で比較し、値が小さい方の信号を各画素の3番目に小さい信号としてラインメモリ部74に記憶する(ステップ33)。比較部23で最後のV−OBの比較が終了すると、ラインメモリ部74は、3番目に小さい信号をスミア補正用のOB代表値信号としてスミア補正部5に出力し(ステップ34)、代表値信号検出処理が終了する(ステップ27)。   Next, the embodiments shown in FIGS. 1B, 2B, 3B, and 4B will be described. The CPU 9 sets an upper limit value of the minimum value signal, an upper limit value of the second smallest signal, and an upper limit value of the third smallest signal in the line memory units 72, 73, and 74, respectively. The comparison unit 21 compares the upper limit value stored in the line memory unit 72 with the pixel value of the V-OB1 video signal between the pixels, and the smaller value of the signal (V-OB1 video signal). Is stored in the line memory unit 72 as a minimum value signal (steps 21 and 28). The comparison unit 21 compares the value of the minimum signal and the value of the pixel of the video signal of V-OB2 between the pixels, and the line memory unit 72 uses the signal having the smaller value as the signal of the minimum value of each pixel. (Step 29). The comparison unit 22 compares the value of the larger signal with the upper limit value stored in the line memory unit 73 as the second smallest signal of each pixel, and compares the signal having the smaller value second. A small signal is stored in the line memory unit 73 (step 29). The comparison unit 21 compares the value of the signal stored in the line memory unit 72 and the value of the video signal of the V-OB3 between the pixels, and uses the signal having the smaller value as the minimum value signal of each pixel. Store in the memory unit 72. The signal having the larger value is sent as a comparison 1 signal to the comparison unit 23 (step 30). The comparison unit 22 compares the value of the second smallest signal stored in the line memory unit 73 and the signal of comparison 1 between the pixels, and the signal having the smaller value is the second smallest signal of each pixel. Is stored in the line memory unit 73. The comparison unit 23 compares the signal having the larger value with the upper limit value stored in the line memory unit 74 as the third smallest signal among the pixels, and compares the signal having the smaller value to the third value of each pixel. A small signal is stored in the line memory unit 74 (step 31). Similarly, the pixel value of the V-OBN video signal of the Nth line (N is a natural number of 4 or more) and the minimum value of the line memory unit 72 are compared between the pixels, and the signal having the smaller value is compared with each signal. The signal is stored in the line memory unit 72 as a signal of the minimum value of the pixel. The signal having the larger value is sent to the comparison unit 22 as a comparison 1 signal for each pixel (step 24). The comparison unit 22 compares the value of the second smallest signal and the value of the comparison 1 signal between the pixels, and stores the signal having the smaller value in the line memory unit 73 as the second smallest signal of each pixel. To do. The signal having the larger value is sent to the comparison unit 23 as a comparison 2 signal for each pixel (step 32). The comparison unit 23 compares the value of the third smallest signal and the value of the comparison 2 signal in each pixel, and stores the signal having the smaller value in the line memory unit 74 as the third smallest signal of each pixel. (Step 33). When the comparison of the last V-OB is completed in the comparison unit 23, the line memory unit 74 outputs the third smallest signal to the smear correction unit 5 as the smear correction OB representative value signal (step 34). The signal detection process ends (step 27).

さらに、図1C、図2C、図3のC、図4のCに示す実施例について説明する。CPU9は、ラインメモリ部72に最小値信号の上限値を設定しておく。比較部21は、上限値とV−OB1の映像信号の画素の値とを各画素間で比較し、値が小さい方の信号(V−OB1の映像信号)を最小値の信号としてラインメモリ部72に記憶する(ステップ21,35)。比較部21は、最小値の信号の値とV−OB2の映像信号の画素の値とを各画素間で比較し、値が小さい方の信号を最小値の信号としてラインメモリ部72に記憶する(ステップ36)。同様に、比較部21は、Nライン目(Nは3以上の自然数)のV−OBNの映像信号の画素の値と最小値の信号の値とを各画素間で比較し、値が小さい方の信号を最小値の信号としてラインメモリ部72に記憶する(ステップ37)。比較部21が最後のV−OBの比較処理を終了すると、ラインメモリ部72は、最小値の信号をスミア補正用のOB代表値信号としてスミア補正部5に出力し(ステップ38)、代表値検出処理が終了する(ステップ27)。   Further, the embodiments shown in FIGS. 1C, 2C, 3C, and 4C will be described. The CPU 9 sets an upper limit value of the minimum value signal in the line memory unit 72. The comparison unit 21 compares the upper limit value and the pixel value of the V-OB1 video signal between the pixels, and sets the signal having the smaller value (V-OB1 video signal) as the minimum value signal as a line memory unit. 72 (steps 21 and 35). The comparison unit 21 compares the value of the minimum value signal and the value of the pixel of the V-OB2 video signal between the pixels, and stores the signal having the smaller value in the line memory unit 72 as the minimum value signal. (Step 36). Similarly, the comparison unit 21 compares the pixel value of the video signal of the V-OBN of the Nth line (N is a natural number of 3 or more) and the value of the minimum signal value between the pixels, and the smaller value is obtained. Is stored in the line memory unit 72 as a minimum value signal (step 37). When the comparison unit 21 finishes the last V-OB comparison process, the line memory unit 72 outputs the minimum value signal to the smear correction unit 5 as the smear correction OB representative value signal (step 38). The detection process ends (step 27).

また、図1D、図2D、図3D、図4Dに示す実施例について説明する。CPU9は、ラインメモリ部71の値を0、ラインメモリ部75の値を信号の下限値に設定しておく。比較部21は、下限値とV−OB1の映像信号の値とを各画素間で比較し、値が大きい方の信号(V−OB1の映像信号)を各画素の最大値の信号としてラインメモリ部75に記憶する(ステップ21,39)。比較部21は、最大値の信号とV−OB2の映像信号の画素の値とを各画素間で比較し、値が大きい方の信号を最大値の信号としてラインメモリ部75に記憶する。加算部13は、値が小さい方の信号を中間値としてラインメモリ部71に加算記憶する(ステップ40)。同様に、比較部21は、Nライン目のV−OBN(Nは3以上の自然数)の映像信号の画素の値と最大値の信号とを各画素間で比較し、値が大きい方の信号を最大値の信号としてラインメモリ部75に記憶する。加算部13は、値が小さい方の信号を中間値としてラインメモリ部71に加算記憶する(ステップ41)。比較部21が最後のV−OBの比較処理を終了すると、ラインメモリ部71は、平均化部12に加算記憶した値を出力する。平均化部12は、中間値の信号を1/(N−1)に減衰して平均値を算出しスミア補正用のOB代表値信号としてスミア補正部5に出力し(ステップ42)、代表値検出処理が終了する(ステップ27)。   The embodiments shown in FIGS. 1D, 2D, 3D, and 4D will be described. The CPU 9 sets the value of the line memory unit 71 to 0 and the value of the line memory unit 75 to the lower limit value of the signal. The comparison unit 21 compares the lower limit value and the value of the V-OB1 video signal between the pixels, and uses the signal having the larger value (V-OB1 video signal) as the maximum value signal of each pixel in the line memory. Stored in the unit 75 (steps 21 and 39). The comparison unit 21 compares the maximum value signal and the pixel value of the V-OB2 video signal between the pixels, and stores the signal having the larger value in the line memory unit 75 as the maximum value signal. The adding unit 13 adds and stores the signal having the smaller value in the line memory unit 71 as an intermediate value (step 40). Similarly, the comparison unit 21 compares the pixel value of the video signal of the V-OBN (N is a natural number of 3 or more) of the Nth line with the maximum value signal between the pixels, and the signal having the larger value is compared. Is stored in the line memory unit 75 as a maximum value signal. The adding unit 13 adds and stores the signal having the smaller value in the line memory unit 71 as an intermediate value (step 41). When the comparison unit 21 finishes the last V-OB comparison process, the line memory unit 71 outputs the value added and stored in the averaging unit 12. The averaging unit 12 attenuates the intermediate value signal to 1 / (N−1), calculates the average value, and outputs the average value to the smear correction unit 5 as an OB representative value signal for smear correction (step 42). The detection process ends (step 27).

また、図1E、図2E、図3のE、図4のEに示す実施例について説明する。CPU9は、ラインメモリ部71の値を0、ラインメモリ部72の値を信号の上限値に設定しておき、ラインメモリ部75の値を信号の下限値に設定しておく。比較部21は、下限値とV−OB1の映像信号の画素の値とを各画素間で比較し、値が大きい方の信号(V−OB1の映像信号)を各画素の最大値の信号としてラインメモリ部75に記憶する(ステップ21,43)。比較部21は、最大値の信号とV−OB2の映像信号の画素の値とを各画素間で比較し、値が大きい方の信号を各画素の最大値の信号としてラインメモリ部75に記憶する。値が小さい方の信号は、各画素の最小値の信号として比較部22に送られる。比較部22は、値が小さい方の信号とラインメモリ部72に記憶された上限値とを各画素間で比較し、値が小さい方の信号を各画素の最小値の信号としてラインメモリ部72に記憶する(ステップ44)。比較部21は、ラインメモリ部75に記憶されている最大値の信号の値とV−OB3の映像信号の画素の値とを各画素で比較し、値が大きい方の信号を最大値の信号としてラインメモリ部75に記憶する。比較部21は、値が小さい方の信号を比較1の信号として比較部22に送る(ステップ45)。比較部22は、最小値の信号の値と比較1の信号の値とを各画素間で比較し、値が小さい方の信号を最小値の信号としてラインメモリ部72に記憶し、値が大きい方の信号を中間値として加算部13を介してラインメモリ部71に加算記憶する(ステップ46)。同様に、比較部21は、Nライン目(Nは4以上の自然数)のV−OBNの映像信号の画素の値と最大値の信号の値とを各画素間で比較し、値が大きい方の信号を最大値の信号としてラインメモリ部75に記憶し、値が小さい方の信号を比較1の信号として、比較部22に送る(ステップ47)。比較部22は、最小値の信号の値と比較1の信号の値とを各画素間で比較し、値が小さい方の信号を最小値の信号としてラインメモリ部72に記憶し、値が大きい方の信号を中間値として加算部13を介してラインメモリ部71に加算記憶する(ステップ48)。比較部22が最後のV−OBの比較処理を終了すると、ラインメモリ部71は、平均化部12に加算記憶した値を出力する。平均化部12は、中間値の信号を1/(N−2)に減衰して平均値を算出しスミア補正用のOB代表値信号としてスミア補正部5に出力し(ステップ49)、代表値信号処理が終了する(ステップ27)。   Further, the embodiments shown in FIGS. 1E, 2E, 3E, and 4E will be described. The CPU 9 sets the value of the line memory unit 71 to 0, sets the value of the line memory unit 72 to the upper limit value of the signal, and sets the value of the line memory unit 75 to the lower limit value of the signal. The comparison unit 21 compares the lower limit value with the pixel value of the video signal of V-OB1 between the pixels, and uses the signal with the larger value (V-OB1 video signal) as the signal of the maximum value of each pixel. It memorize | stores in the line memory part 75 (steps 21 and 43). The comparison unit 21 compares the maximum value signal and the pixel value of the V-OB2 video signal between the pixels, and stores the signal having the larger value in the line memory unit 75 as the maximum value signal of each pixel. To do. The signal having the smaller value is sent to the comparison unit 22 as a signal of the minimum value of each pixel. The comparison unit 22 compares the signal having the smaller value with the upper limit value stored in the line memory unit 72 between the pixels, and uses the signal having the smaller value as the signal of the minimum value of each pixel. (Step 44). The comparison unit 21 compares the value of the maximum signal stored in the line memory unit 75 with the value of the pixel of the video signal of V-OB3 for each pixel, and the signal with the larger value is the signal with the maximum value. Is stored in the line memory unit 75. The comparison unit 21 sends the signal having the smaller value to the comparison unit 22 as a signal of comparison 1 (step 45). The comparison unit 22 compares the value of the minimum value signal and the value of the comparison 1 signal between the pixels, stores the smaller value signal in the line memory unit 72 as the minimum value signal, and the value is larger. The other signal is added and stored as an intermediate value in the line memory 71 via the adder 13 (step 46). Similarly, the comparison unit 21 compares the pixel value of the video signal of the V-OBN of the Nth line (N is a natural number of 4 or more) and the value of the maximum signal value between the pixels, and the larger value is obtained. Is stored in the line memory unit 75 as a maximum value signal, and the signal having the smaller value is sent to the comparison unit 22 as a comparison 1 signal (step 47). The comparison unit 22 compares the value of the minimum value signal and the value of the comparison 1 signal between the pixels, stores the smaller value signal in the line memory unit 72 as the minimum value signal, and the value is larger. The other signal is added and stored as an intermediate value in the line memory 71 via the adder 13 (step 48). When the comparison unit 22 finishes the last V-OB comparison process, the line memory unit 71 outputs the value added and stored in the averaging unit 12. The averaging unit 12 attenuates the intermediate value signal to 1 / (N−2) to calculate an average value, and outputs the average value to the smear correction unit 5 as an OB representative value signal for smear correction (step 49). The signal processing ends (step 27).

また、図1F、図2F、図3のF、図4のFに示す実施例について説明する。CPU9は、ラインメモリ部71の値を0、ラインメモリ部75,76の値を信号の下限値にしておく。比較部21は、下限値とV−OB1の映像信号の画素の値とを各画素間で比較し、値が大きい方の信号(V−OB1の映像信号)を最大値の信号としてラインメモリ部75に記憶する(ステップ21,50)。比較部21は、最大値の信号の値とV−OB2の映像信号の画素の値とを各画素間で比較し、値が大きい方の信号を最大値の信号としてラインメモリ部75に記憶する。値が小さい方の信号は、各画素の2番目に大きい信号として比較部22に送られる。比較部22は、値が小さい方の信号とラインメモリ部76に記憶された下限値と各画素間で比較し、値が小さい方の信号を各画素の2番目に大きい信号としてラインメモリ部76に記憶する(ステップ51)。比較部21は、ラインメモリ部75に記憶されている最大値の信号の値とV−OB3の映像信号の画素の値とを各画素間で比較し、値が大きい方の信号を最大値の信号としてラインメモリ部75に記憶する。比較部21は、値が小さい方の信号を比較1の信号として比較部22に送る(ステップ45)。比較部22は、2番目に大きい信号の値と比較1の信号の値とを各画素で比較し、値が大きい方の信号を2番目に大きい信号としてラインメモリ部75に記憶し、値が小さい方の信号を中間値として加算部13を介してラインメモリ部71に加算記憶する(ステップ52)。同様に、比較部21は、Nライン目(Nは4以上の自然数)のV−OBNの映像信号の画素の値と最大値の信号の値とを各画素間で比較し、値が大きい方の信号を最大値の信号としてラインメモリ部75に記憶し、値が小さい方の信号を比較1の信号として比較部22に送る(ステップ47)。比較部22は、2番目に大きい信号の値と比較1の信号の値とを各画素間で比較し、値が大きい方の信号を2番目に大きい信号としてラインメモリ部75に記憶し、値が小さい方の信号を中間値として加算部13を介してラインメモリ部71に加算記憶する(ステップ53)。比較部22が最後のV−OBの比較処理を終了すると、ラインメモリ部71は、平均化部12に加算記憶した値を出力する。平均化部12は、中間値の信号を1/(N−2)に減衰して平均値を算出しスミア補正用のOB代表値信号としてスミア部5に出力し(ステップ49)、代表値信号検出処理が終了(ステップ27)する。   Further, the embodiments shown in FIGS. 1F, 2F, 3F, and 4F will be described. The CPU 9 sets the value of the line memory unit 71 to 0 and the values of the line memory units 75 and 76 to the lower limit value of the signal. The comparison unit 21 compares the lower limit value with the pixel value of the video signal of V-OB1 between the pixels, and uses the signal having the larger value (V-OB1 video signal) as the maximum value signal as a line memory unit. 75 (steps 21 and 50). The comparison unit 21 compares the maximum signal value and the pixel value of the V-OB2 video signal between the pixels, and stores the signal having the larger value in the line memory unit 75 as the maximum value signal. . The signal having the smaller value is sent to the comparison unit 22 as the second largest signal of each pixel. The comparison unit 22 compares the signal having the smaller value with the lower limit value stored in the line memory unit 76 between the pixels, and sets the signal having the smaller value as the second largest signal of each pixel. (Step 51). The comparison unit 21 compares the value of the maximum signal stored in the line memory unit 75 with the value of the pixel of the V-OB3 video signal between the pixels, and compares the signal having the larger value with the maximum value. The signal is stored in the line memory unit 75 as a signal. The comparison unit 21 sends the signal having the smaller value to the comparison unit 22 as a signal of comparison 1 (step 45). The comparison unit 22 compares the value of the second largest signal and the value of the comparison 1 signal in each pixel, and stores the signal having the larger value in the line memory unit 75 as the second largest signal. The smaller signal is added and stored in the line memory 71 via the adder 13 as an intermediate value (step 52). Similarly, the comparison unit 21 compares the pixel value of the video signal of the V-OBN of the Nth line (N is a natural number of 4 or more) and the value of the maximum signal value between the pixels, and the larger value is obtained. Is stored in the line memory unit 75 as a maximum value signal, and the signal having the smaller value is sent to the comparison unit 22 as a signal for comparison 1 (step 47). The comparison unit 22 compares the value of the second largest signal and the value of the comparison 1 signal between the pixels, and stores the signal having the larger value in the line memory unit 75 as the second largest signal. Is added and stored in the line memory 71 via the adder 13 as an intermediate value (step 53). When the comparison unit 22 finishes the last V-OB comparison process, the line memory unit 71 outputs the value added and stored in the averaging unit 12. The averaging unit 12 attenuates the intermediate value signal to 1 / (N−2), calculates the average value, and outputs it to the smear unit 5 as an OB representative value signal for smear correction (step 49). The detection process ends (step 27).

さらに、図1B、図2B、図3のB、図4のBに示す実施例は、各垂直画素信号の最小値から3番目の値を代表値として用いる方法を示しており、暗電流レベルが異常に高い白キズと呼ばれる画素の白キズの影響がないだけでなく、暗電流が極端に少ない画素欠陥である黒キズの影響がほとんどなくなり、厳しく選別した高価なCCD撮像素子を使用しにくい監視用途特にEM−CCDに適している。また、白キズと黒キズの影響がほとんどないため、垂直スミア発生の有無を検出する回路を省略できる。垂直スミア誤検出による黒い縦筋を防止する少レベル垂直スミア補正信号の切り捨て処理する回路も省略できる。図1Bに示す実施例では、信号ViからOB代表値信号を減算してから映像信号処理部7に入力する信号Vmを10bitにして、監視用途に多く使用される低価格の映像信号処理部7の入力ビット数に合わせている。但し、垂直スミア補正の精度を維持するため、FEP4の出力ビット数は14ビットとしている。   Further, the embodiments shown in FIGS. 1B, 2B, 3B, and 4B show a method of using the third value from the minimum value of each vertical pixel signal as a representative value, and the dark current level is Not only is there no influence of white scratches on pixels called abnormally high white scratches, but there is almost no influence of black scratches, which are pixel defects with extremely low dark current, making it difficult to use expensive CCD image sensors that are strictly selected Applications Especially suitable for EM-CCD. Further, since there is almost no influence of white scratches and black scratches, a circuit for detecting the presence or absence of vertical smear generation can be omitted. A circuit for truncating the low-level vertical smear correction signal that prevents black vertical streak due to vertical smear detection error can also be omitted. In the embodiment shown in FIG. 1B, the signal Vm input to the video signal processing unit 7 after subtracting the OB representative value signal from the signal Vi is set to 10 bits, and the low-priced video signal processing unit 7 that is often used for monitoring purposes. It matches the number of input bits. However, in order to maintain the accuracy of vertical smear correction, the number of output bits of FEP4 is 14 bits.

また、図1C、図2C、図3のC、図4のCは、本発明の他の一実施例であり、V−OB代表値として各垂直画素信号の最小値を算出する方法を示しており、垂直スミア補正信号の記憶が1ライン分で済み集積規模が従来例よりも小型になる。本実施例では、V−OBライン数が少なく、黒キズも少ないHDTVのCCD撮像素子に適している。さらに、AGCはないが、16bitのFEPを用い、垂直スミア補正が高精度となっている。ここで、図1A、1Bで比較部22、23とラインメモリ72、73とを省略し、図2Cの動作をすれば、V−OBライン数が少なく、黒キズも少ないHDTVのCCD撮像素子を用いた高感度用途になる。
さらに、図1D、図2D、図3のD、図4のDに示す実施例は、V−OBが3ライン以上で最大値を除く平均値を算出する方法を示しており、白キズが多くV−OBのライン数も多いが黒キズが少ないCCD撮像素子に適している。
図1E、図2E、図3のE、図4のEに示す実施例は、V−OBが4ライン以上で最大値と最小値を除く平均値を代表値として用いる方法を示しており、図1Eは22ビットにA/D変換しCCD撮像素子の暗電流の補正が容易な事と合わせて、白キズも黒キズも多くV−OBのライン数も多いCCD撮像素子を高感度動作させる用途に適している。
図1F、図2F、図3のF、図4のFに示す実施例は、V−OBが4ライン以上で最大値と2番目に大きい値を除く平均値を代表値としており、白キズが特に多くV−OBのライン数も多いCCD撮像素子を高感度動作させる用途に適している。
1C, FIG. 2C, FIG. 3C, and FIG. 4C are other embodiments of the present invention, and show a method of calculating the minimum value of each vertical pixel signal as a V-OB representative value. Thus, the vertical smear correction signal can be stored for one line, and the integration scale is smaller than that of the conventional example. The present embodiment is suitable for an HDTV CCD image sensor having a small number of V-OB lines and few black scratches. Furthermore, although there is no AGC, vertical smear correction is highly accurate using 16-bit FEP. Here, if the comparison units 22 and 23 and the line memories 72 and 73 are omitted in FIGS. 1A and 1B, and the operation of FIG. 2C is performed, a CCD image pickup device of an HDTV having a small number of V-OB lines and few black scratches can be obtained. It becomes the high sensitivity application used.
Further, the embodiments shown in FIGS. 1D, 2D, 3D, and 4D show a method of calculating an average value excluding the maximum value when V-OB is 3 lines or more, and there are many white scratches. It is suitable for a CCD image sensor with a large number of V-OB lines but few black scratches.
1E, FIG. 2E, FIG. 3E, and FIG. 4E show a method in which the average value excluding the maximum value and the minimum value is used as a representative value when V-OB is 4 lines or more. 1E is A / D-converted to 22 bits, and it is easy to correct the dark current of the CCD image sensor. In addition, the CCD image sensor with many white and black defects and a large number of V-OB lines can be operated with high sensitivity. Suitable for
In the embodiments shown in FIGS. 1F, 2F, 3F and 4F, the average value excluding the maximum value and the second largest value when V-OB is 4 lines or more is a representative value. It is particularly suitable for applications in which a CCD image pickup device having a large number of V-OB lines is operated with high sensitivity.

V−OBは画面始まりの変動が大きい垂直暗部むらによる補正精度劣化を避けるため、有効画素より後に出力される画面下のV−OB領域画素から出力される映像信号を垂直暗部むら補正してから、代表値を算出した方がスミア補正の精度が良くなる。しかし、スミア補正が1画面(約17m(1/60)秒)遅れるので、実用的ではない。そこで、14bitにA/D変換して画面始まりの変動が大きい垂直暗部むら補正を高精度に行い、有効画素より先に出力される画面上のV−OB領域画素から出力される映像信号を垂直暗部むら補正してから、代表値を算出すれば、有効画素出力と同時にスミア補正でき、遅れがない。   In V-OB, in order to avoid deterioration in correction accuracy due to vertical dark portion unevenness with a large fluctuation at the beginning of the screen, a video signal output from a V-OB area pixel below the screen that is output after the effective pixel is corrected for unevenness in the vertical dark portion. The accuracy of smear correction is better when the representative value is calculated. However, since smear correction is delayed by one screen (about 17 m (1/60) second), it is not practical. Therefore, A / D conversion to 14 bits is performed, and vertical dark spot unevenness correction with a large fluctuation at the beginning of the screen is performed with high accuracy, and the video signal output from the V-OB area pixel on the screen that is output before the effective pixel is vertical. If the representative value is calculated after correcting the dark portion unevenness, the smear correction can be performed simultaneously with the effective pixel output, and there is no delay.

また、図1Nと図1Pとは、V−OBが2ライン以上で最小値を用いて暗電流増倍の近似値算出し、V−OB最小値と有効画素の暗電流とを減算し、V−OB最小値と有効画素の暗電流に応じて高輝度の圧縮を伸長する場合の本発明の一実施例の全体構成の撮像装置を示すブロック図である。図1Nにおいて、CCD GNDまたはOB CLAMP LOOPまたはBLACK LEVEL CLAMP等CDSの基準電圧をオフセットさせる量をCDS入力信号振幅の半分以上確保し、12bit以上のA/Dと12bit以上の映像信号処理回路と全画素メモリとを有し、該全画素メモリに暗電流の基準値を記憶し、複数ラインのVOBの各垂直画素信号の最小値から2番目の値をスミア信号として算出し、VOBの暗電流の現在の基準量分をCCD GNDまたはOB CLAMP LOOPまたはBLACK LEVEL CLAMP等CDSの基準電圧をVOBの暗電流の現在の基準量にAGCの増幅度分D.AGCで減衰させた分、オフセットさせて映像信号からVOBの暗電流の現在の基準量を減算し、VOBの暗電流の現在の代表値と基準VOBの暗電流の代表値との比を暗電流増倍の近似値とし、全画素メモリの有効画素の暗電流と暗電流増倍の近似値とからOBとの差分暗電流を算出し、スミア信号と加算したものを映像信号からVOBの暗電流の現在の基準量を減算したものから減算し、減算した暗電流の現在の基準量とOBとの差分暗電流とスミアを含むOB代表値とを基準に、映像信号の高輝度を伸長し信号処理する。図6の伸長後の有効bit諧調の映像信号とする。諧調CDSの基準電圧をオフセットさせる応答が画面周期で構わないで、A/Dと映像信号処理回路とのbit諧調が12bit以上で済む。EM−CCDの暗電流むらが少なくなればbit諧調が10bit以上で済、暗電流や白キズや垂直スミアまでが高レベルになり圧縮されても、映像の階調範囲が拡大する。   In addition, FIG. 1N and FIG. 1P calculate the approximate value of dark current multiplication using the minimum value when V-OB is 2 lines or more, subtract the V-OB minimum value and the dark current of the effective pixel, FIG. 3 is a block diagram illustrating an imaging apparatus having an overall configuration according to an embodiment of the present invention when decompressing high-intensity compression in accordance with a minimum value of OB and a dark current of effective pixels. In FIG. 1N, the amount of offset of the CDS reference voltage such as CCD GND, OB CLAMP LOOP, or BLACK LEVEL CLAMP is secured more than half of the CDS input signal amplitude, A / D of 12 bits or more, video signal processing circuit of 12 bits or more, and all A dark current reference value is stored in all the pixel memories, a second value is calculated as a smear signal from the minimum value of the vertical pixel signals of the VOBs of the plurality of lines, and the dark current of the VOB is calculated. The image of the current reference amount is offset by the amount of AGC amplification D. AGC attenuated to the current reference amount of the VOB dark current, such as CCD GND, OB CLAMP LOOP or BLACK LEVEL CLAMP. The current reference amount of the VOB dark current is subtracted from the signal, and the ratio between the current representative value of the VOB dark current and the representative value of the reference VOB dark current is used as an approximation of the dark current multiplication. Effective pixel dark current and dark The difference dark current from OB is calculated from the approximate value of the current multiplication, and the sum of the smear signal is subtracted from the subtraction of the current reference amount of the VOB dark current from the video signal, and the subtracted dark current is calculated. Based on the dark current difference between the current reference amount and OB and the OB representative value including smear, the high luminance of the video signal is expanded and signal processing is performed. Assume that the decompressed effective bit tone video signal in FIG. The response for offsetting the reference voltage of the gradation CDS may be a screen cycle, and the bit gradation between the A / D and the video signal processing circuit is 12 bits or more. If the dark current unevenness of the EM-CCD is reduced, the bit gradation can be 10 bits or more, and even if the dark current, white scratches and vertical smear are at a high level and compressed, the gradation range of the image is expanded.

図1Pと図1Nとの違いは、OBからの暗電流の検出と補正とをFEP121の内部とスミア暗電流検出部5と白圧縮補正部6とに分けて、加算器112と除算器113と基準メモリ部114とを追加し、除算器113で検出したOB暗電流詳細補正の暗電流増倍量と加算器112で加算して暗電流増倍量とすれば、動作は複雑となるが、FEP121とスミア暗電流検出部5と白圧縮補正部6と映像信号処理回路7との映像信号諧調(bit数)を10bit以上で済ませたことである。図1Oの加算器111と112と除算器113と基準メモリ部114とを省略し、FEP内部の暗電流の祖補正を無視した有効画素の暗電流減算とFEP内部の暗電流の祖補正を無視した白伸長とすれば補正精度は低下するが、動作は簡易になる。   The difference between FIG. 1P and FIG. 1N is that the dark current detection and correction from the OB is divided into the inside of the FEP 121, the smear dark current detection unit 5, and the white compression correction unit 6, and an adder 112, a divider 113, If the reference memory unit 114 is added and the dark current multiplication amount of the OB dark current detailed correction detected by the divider 113 is added to the dark current multiplication amount by the adder 112, the operation becomes complicated. This is that the video signal gradation (number of bits) of the FEP 121, the smear dark current detection unit 5, the white compression correction unit 6, and the video signal processing circuit 7 is 10 bits or more. The adders 111 and 112, the divider 113, and the reference memory unit 114 in FIG. 1O are omitted, and the dark current subtraction of the effective pixels and the dark current correction inside the FEP are ignored, ignoring the dark current correction inside the FEP. If the white extension is performed, the correction accuracy is lowered, but the operation is simplified.

また、図1Oは、V−OBの最小値から2番目を用いて暗電流増倍の近似値算出し、V−OB最小値から2番目と有効画素の暗電流とを減算し、V−OB最小値から2番目と有効画素の暗電流に応じて高輝度の圧縮を伸長する場合の本発明の一実施例の全体構成の撮像装置を示すブロック図である。図1Oにおいて、CCD GND等画素単位で可変するCDSの基準電圧をオフセットさせる量をCDS入力信号振幅の半分以上確保し、10bit以上のA/Dと10bit以上の映像信号処理回路と全画素メモリとを有し、該全画素メモリに暗電流の基準値を記憶し、VOBの暗電流の現在の総量と基準VOBの暗電流の総量との比を暗電流増倍の近似値とし、CCD GND等画素単位で可変するCDSの基準電圧をオフセットさせて映像信号から全画素の暗電流の現在の近似値とスミアとの総量を減算し、全画素の暗電流の現在の近似値とスミアとの総量の圧縮も考慮して全画素の暗電流の現在の近似値とスミアとの総量を基準に、伸長し映像信号処理回路で信号処理する。図6の伸長後の有効bit諧調の映像信号とする。CDSの基準電圧の応答が画素単位が必要だが、映像の減算が不要になり、A/Dと映像信号処理回路とのbit諧調が10bit以上で済み、暗電流や白キズや垂直スミアまでが高レベルになり圧縮されても、映像の階調範囲が拡大する。
さらに、有効画素の各画素の暗電流がOB暗電流から算出され、有効画素の各画素の暗電流が有効画素の各画素の映像信号から減算されるため、暗電流むらがなくなり、高電子増倍時や長時間蓄積時の電流むらによるすだれ状の雑音がなくなり、実効感度が向上し、電子増倍率が低く制御できる。電子増倍率が低くて良いと電子増倍率の経時劣化も少なく、冷却部14の消費電力も少なくて済む。
Further, FIG. 1O calculates an approximate value of dark current multiplication using the second from the minimum value of V-OB, subtracts the second and the dark current of the effective pixel from the minimum value of V-OB, and V-OB. It is a block diagram which shows the imaging device of the whole structure of one Example of this invention in the case of extending | stretching high-intensity compression according to the dark current of the 2nd and effective pixel from the minimum value. In FIG. 1O, the amount of offset of the CDS reference voltage, which is variable in pixel units such as CCD GND, is secured by more than half of the CDS input signal amplitude, A / D of 10 bits or more, video signal processing circuit of 10 bits or more, and all pixel memory The dark current reference value is stored in all the pixel memories, and the ratio of the current total amount of dark current of the VOB and the total dark current amount of the reference VOB is used as an approximation of dark current multiplication, CCD GND, etc. Offset the CDS reference voltage, which is variable in pixel units, and subtract the current approximate value of the dark current and smear of all pixels from the video signal, then add the current approximate value of the dark current and smear of all pixels. In consideration of compression, the video signal processing circuit performs signal processing on the basis of the current approximate value of the dark current of all pixels and the total amount of smear. Assume that the decompressed effective bit tone video signal in FIG. The CDS reference voltage response requires pixel units, but no video subtraction is required, and the bit gradation between the A / D and the video signal processing circuit is 10 bits or more, and dark current, white scratches and vertical smear are high. Even if the level is compressed, the gradation range of the video is expanded.
Further, since the dark current of each pixel of the effective pixel is calculated from the OB dark current and the dark current of each pixel of the effective pixel is subtracted from the video signal of each pixel of the effective pixel, the dark current unevenness is eliminated and the high electron increase is eliminated. Interdigital noise due to current unevenness during doubling or long-time storage is eliminated, effective sensitivity is improved, and the electron multiplication factor can be controlled low. If the electron multiplication factor is low, the deterioration of the electron multiplication factor with time is small, and the power consumption of the cooling unit 14 is small.

電子増倍時は垂直転送後に信号が増倍されるため、フォトダイオードや垂直転送路の転送容量不足が補われ、暗電流を低減する電子冷却と組み合わせれば映像の階調範囲が拡大する。さらにフォトダイオードの蓄積容量のばらつきで、画面内で不均一だった映像の階調範囲が画面内で均一になるに従い、CCD撮像素子から出力される暗電流や映像信号が高レベルになり圧縮されたら圧縮を伸長してから暗電流や白キズや垂直スミアを減算するかまたは暗電流や白キズや垂直スミアを減算してから減算した暗電流や白キズや垂直スミアを基準に高レベルを伸長する。さらに電子増倍が高くなり、暗電流や白キズや垂直スミアまでが高レベルになり圧縮されたら、暗電流や白キズや垂直スミアや映像信号の圧縮を伸長して圧縮を伸長された映像信号から減算するかまたは暗電流や白キズや垂直スミアを減算してから減算した暗電流や白キズや垂直スミアの高輝度圧縮も考慮して減算した暗電流や白キズや垂直スミアを基準に高レベルを伸長する。   At the time of electron multiplication, the signal is multiplied after the vertical transfer, so that the shortage of the transfer capacity of the photodiode and the vertical transfer path is compensated, and when combined with electronic cooling that reduces the dark current, the gradation range of the image is expanded. Furthermore, due to variations in photodiode storage capacity, the dark current and video signal output from the CCD image sensor become high level and compressed as the gradation range of the image that was not uniform in the screen becomes uniform in the screen. Once the compression is extended, dark current, white scratches and vertical smear are subtracted, or dark current, white scratches and vertical smear are subtracted, and then the high level is expanded based on the dark current, white scratches and vertical smear subtracted. To do. When the electron multiplication is further increased and the dark current, white scratches and vertical smear are at a high level and compressed, the dark current, white scratches, vertical smear and video signal compression are expanded to expand the compressed video signal. Subtract from dark current, white scratches, or vertical smear, and then subtract from dark current, white scratches, or vertical smear to take into account high-intensity compression of dark current, white scratches, or vertical smear. Extend level.

その結果、暗電流や白キズや垂直スミアが多く、V−OB画素部分のライン数が少ないEM−CCD撮像素子や、垂直スミアも白キズも多いEM−CCDを使用しても、安定に映像信号の圧縮が伸長され、EM−CCDから出力される映像信号の映像の階調範囲の低下を電子的に補正し、白キズや垂直スミア補正の過不足の誤差分を低減する。つまり、映像信号の映像信号の白つぶれまたは黒レベル付近の偽信号を低減し、実効的に階調範囲が拡大される。   As a result, even when using an EM-CCD imaging device with many dark currents, white scratches and vertical smears and a small number of lines in the V-OB pixel part, and EM-CCDs with many vertical smears and white scratches, a stable image can be obtained. The compression of the signal is expanded, and a reduction in the gradation range of the image of the image signal output from the EM-CCD is electronically corrected to reduce an error due to white flaw and vertical smear correction. In other words, the grayscale range is effectively expanded by reducing the whiteout of the video signal or the false signal near the black level.

以上EM−CCDを用いた撮像装置について詳細に説明したが、本発明は、ここに記載された撮像装置に限定されるものではなく、上記以外のCCDを用いた撮像装置他の撮像装置に広く適用することができることは言うまでもない。   Although the image pickup apparatus using the EM-CCD has been described in detail above, the present invention is not limited to the image pickup apparatus described here, and can be widely applied to other image pickup apparatuses using other CCDs. It goes without saying that it can be applied.

本発明による他の実施例として、まず背景技術で述べた、異常に強い過飽和入射光により垂直スミアの一部のCCD出力レベルがブルーミングとよばれる過飽和レベルの白状態になることを説明する。スミアやブルーミングの源となる入射光を以下光源とする。V−OBスミアレベルとV−OBの暗電流または暗電流レベルが異常に高い白キズと呼ばれる画素の暗電流の合計値は、V−OBの縦の画素(列)の最小値(V-OBmin)で近似検出される、そして、ブルーミングになることを防止する撮像方法を、有効画素の信号の高輝度の圧縮を伸長してV−OBの代表値を減算する場合の本発明の一実施例の全体構成の撮像装置を示すブロック図の図1Qと図1Rと、本発明の1実施例での有効画素の光源によるCCD出力レベルと白キズのないV−OBスミアレベル比例の補正を示す入射光とCCD出力レベルの模式図の図8Aと、本発明の1実施例での有効画素の光源によるCCD出力レベルと白キズのあるV−OBスミアレベル比例の破綻を示す入射光とCCD出力レベルの模式図の図8Bと、本発明の1実施例での有効画素のブルーミング光源によるCCD出力レベルと白キズのないV−OBスミアレベルからの近似を示す入射光とCCD出力レベルの模式図の図8Cとを用いて説明する。   As another embodiment according to the present invention, first, it will be described that the CCD output level of a part of the vertical smear becomes a white state of a supersaturation level called blooming due to the abnormally strong supersaturated incident light described in the background art. The incident light that is the source of smear and blooming is hereinafter referred to as the light source. The sum of the V-OB smear level and the dark current of the V-OB or the dark current of a pixel called a white scratch with an abnormally high dark current level is the minimum value (V-OBmin) of the vertical pixels (columns) of the V-OB. An embodiment of the present invention in which the representative value of V-OB is subtracted by expanding the high-intensity compression of the signal of the effective pixel as an imaging method that is approximately detected in FIG. FIG. 1Q and FIG. 1R of the block diagrams showing the image pickup apparatus having the overall configuration of FIG. 1 and incident showing the correction of the proportionality of the CCD output level by the effective pixel light source and the V-OB smear level without white flaws in one embodiment of the present invention. FIG. 8A is a schematic diagram of the light and the CCD output level, and the incident light and the CCD output level showing breakdown of the proportionality of the CCD output level by the light source of the effective pixel and the V-OB smear level with white scratches in one embodiment of the present invention. 8B of the schematic diagram of the present invention and the present invention 8C of the schematic diagram of the incident light and the CCD output level showing an approximation from the CCD output level by the blooming light source of the effective pixel and the V-OB smear level free from white flaws in one embodiment of FIG.

背景技術で述べた様に、有効画素のCCD出力が過飽和レベルになるのより更に強い飽和入射光ではフォトダイオードで発生し垂直転送路にあふれたた過剰な電荷で垂直転送路が過飽和状態となり、強い入射光の映像の画面下端が垂直スミアより高い過飽和レベルのブルーミングとよばれる白状態になる。さらに過飽和し制限レベルに達したCCD出力映像信号となる異常に強い過飽和入射光では入射光の強度が高くなるに従い強い過飽和入射光の映像の画面下方から順々に、垂直スミアより高い過飽和レベルの白状態になり異常に強い過飽和入射光で水平転送路も過飽和状態となり、逆に画面上部の垂直スミアは沈み、水平方向にも白いすじ状の水平スミアが明らかになり、映像の階調範囲が低下する。異常に強い過飽和入射光の強度が更に高くなると、白が画面全体に広がる。   As described in the background art, the vertical transfer path becomes supersaturated with excessive charge generated by the photodiode and overflowing the vertical transfer path with saturated incident light that is stronger than the CCD output of the effective pixel reaches the supersaturation level. The lower end of the screen of the image with strong incident light becomes a white state called blooming with a supersaturation level higher than the vertical smear. In addition, the supersaturated incident light that becomes the CCD output video signal that is oversaturated and reaches the limit level has a supersaturation level higher than that of the vertical smear in order from the bottom of the screen of the image of the strong supersaturated incident light as the incident light intensity increases. The horizontal transfer path also becomes supersaturated due to abnormally strong supersaturated incident light, and the vertical smear at the top of the screen sinks, and white streaky horizontal smears are revealed in the horizontal direction. descend. When the intensity of abnormally strong supersaturated incident light is further increased, white spreads over the entire screen.

本発明の一実施例の全体構成の撮像装置を示すブロック図において、図1Hと図1Q、図1Lと図1Rとの違いは、白圧縮補正部5入力に白伸長部101が移動したことで,白伸長部103が不要となり、比較部115を追加し、比較部115の最大値を過飽和信号としてCPU9に供給している。また、白圧縮補正部5入力に白伸長部101が移動したことでFEP4の階調は10bitでもかまわない。図1Aから図1Gと図1Iと図1Jと図1Kと図1Mから図1Oにおいて上記と同様に、白圧縮補正部5入力に白伸長部101を移動し白伸長部103を不要とし比較部115を追加し比較部115の最大値を過飽和信号としてCPU9に供給しても良い。図示しないが本発明の一実施例の全体構成の撮像装置を示すブロック図においてCPU9は撮像装置1の各部と光学系2との状態を監視し制御している。   In the block diagram showing the imaging apparatus having the overall configuration of one embodiment of the present invention, the difference between FIGS. 1H and 1Q, and FIGS. 1L and 1R is that the white expansion unit 101 is moved to the input of the white compression correction unit 5. , The white extension unit 103 becomes unnecessary, and the comparison unit 115 is added, and the maximum value of the comparison unit 115 is supplied to the CPU 9 as a supersaturation signal. Further, the gradation of FEP4 may be 10 bits because the white expansion unit 101 is moved to the input of the white compression correction unit 5. 1A to 1G, FIG. 1I, FIG. 1J, FIG. 1K, and FIG. 1M to FIG. 1O, the white expansion unit 101 is moved to the input of the white compression correction unit 5 to eliminate the need for the white expansion unit 103, as described above. And the maximum value of the comparison unit 115 may be supplied to the CPU 9 as a supersaturation signal. Although not shown, in the block diagram showing the imaging apparatus having the overall configuration of one embodiment of the present invention, the CPU 9 monitors and controls the state of each part of the imaging apparatus 1 and the optical system 2.

本発明の一実施例の全体構成の撮像装置を示すブロック図の図1Qと図1Rとにおいて、過飽和信号が所定以上になったら、CPU9は光学系2の光学絞りを絞るか光学NDフィルタの減衰率を強くして入射光量を少なくするか、CCD駆動部(TG)8により電子シャッタで実効感度を低下させて垂直転送路と水平転送路との過飽和状態を防止する。そして、FEP4のAGCを高くするかEM−CCD3のCMG電圧を高くして電子増倍率を高くして感度を一定に保つ。図1Hと図1Lと同一部分の構成と動作との説明は省略する。   In FIG. 1Q and FIG. 1R of the block diagrams showing the image pickup apparatus having the overall configuration of one embodiment of the present invention, when the supersaturation signal exceeds a predetermined value, the CPU 9 reduces the optical aperture of the optical system 2 or attenuates the optical ND filter. Increasing the rate to reduce the amount of incident light, or reducing the effective sensitivity with the electronic shutter by the CCD drive unit (TG) 8, prevents the supersaturated state between the vertical transfer path and the horizontal transfer path. The sensitivity is kept constant by increasing the AGC of FEP4 or increasing the CMG voltage of EM-CCD3 to increase the electron multiplication factor. The description of the configuration and operation of the same parts as in FIGS. 1H and 1L is omitted.

本発明の1実施例での有効画素の光源によるCCD出力レベルとV−OBスミアレベルとを示す模式図の図8Aと図8Bと図8Cとにおいて、(a)はEM-CCDの非増倍時で(b)はEM-CCDの低増倍時やIT-CCDやFT-CCDで、(c)EM-CCDの高増倍時である。
図8Aと図8Bと図8Cとにおいて、横軸は入射光で縦軸はCCD出力で、左下側の直線及び曲線はV−OBの縦の画素(列)の最小値(V-OBmin)で近似検出される、V−OBスミアレベルとV−OBの暗電流または暗電流レベルが異常に高い白キズと呼ばれる画素の暗電流の合計値のCCD出力で、右上側の直線及び曲線は有効画素の垂直列の最大値Amaxつもりスミアやブルーミングの源となる入射光(以下光源)によるCCD出力である。縦軸との交点は、図8Aと図8Cでは暗電流であり、図8Bでは異常に多い暗電流である白キズの異常に多い暗電流である。
8A, FIG. 8B, and FIG. 8C showing the CCD output level and the V-OB smear level by the light source of the effective pixel in one embodiment of the present invention, (a) is the non-multiplication of EM-CCD. Sometimes (b) is at low multiplication of EM-CCD, IT-CCD and FT-CCD, and (c) is at high multiplication of EM-CCD.
8A, 8B, and 8C, the horizontal axis is incident light, the vertical axis is CCD output, and the lower left straight line and curve are minimum values (V-OBmin) of vertical pixels (columns) of V-OB. The CCD output of the total value of the dark current of the pixels called white scratches, which is the approximate detection of the V-OB smear level and the dark current of V-OB or the dark current level is abnormally high. This is a CCD output by incident light (hereinafter referred to as a light source) that becomes a source of smear and blooming. The intersection with the vertical axis is a dark current in FIGS. 8A and 8C, and an abnormally large dark current with white defects, which is an abnormally large dark current in FIG. 8B.

本発明の1実施例での有効画素の光源によるCCD出力とV−OBの縦の画素(列)の最小値(V-OBmin)で近似検出される、V−OBスミアレベルとV−OBの暗電流または暗電流レベルが異常に高い白キズと呼ばれる画素の暗電流の合計値とを示す模式図の図8Aと図8Bと図8Cとにおいて、有効画素の光源によるCCD出力レベルと白キズのないV−OBスミアレベルの比はCCD出力の飽和を白伸長して直線化すれば80dB等一定である。模式図の図8Aの(c)の様に、有効画素のCCD出力が飽和レベルになっても、有効画素のCCD出力を白伸長すれば、飽和入射光レベルは近似計算できる。   In one embodiment of the present invention, the V-OB smear level and V-OB are detected approximately by the CCD output from the effective pixel light source and the minimum value (V-OBmin) of the vertical pixel (column) of V-OB. 8A, FIG. 8B, and FIG. 8C, which are schematic diagrams showing dark current or the total value of dark current of pixels called white scratches with abnormally high dark current levels, the CCD output level and white scratches of the effective pixel light source. The ratio of the V-OB smear level that is not present is constant, such as 80 dB, if the CCD output saturation is linearly expanded by white extension. As shown in FIG. 8A (c) of the schematic diagram, even if the CCD output of the effective pixel reaches the saturation level, the saturated incident light level can be approximately calculated by white expansion of the CCD output of the effective pixel.

模式図の図8Bの(b)(c)の様に、さらに過飽和し制限レベルに達した有効画素のCCD出力信号となる異常に強い過飽和入射光では有効画素のCCD出力の変化量が少なくを白伸張しても飽和入射光レベルは近似誤差が多く有効ではない。V-OBminで近似検出される、V−OBスミアレベルとV−OBの暗電流または暗電流レベルが異常に高い白キズと呼ばれる画素の暗電流の合計値から80dB等一定の近似計算の方が高精度に有効画素の過飽和入射光レベルは近似計算できる。
模式図の図8Cの(c)の様に、V-OBminのCCD出力信号レベルが飽和レベルになってもV-OBminのCCD出力信号を白伸張すれば、白伸張したV-OBminのCCD出力信号から80dB等一定の近似計算で有効画素の異常に強い過飽和入射光レベルは近似計算できる。
As shown in (b) and (c) of FIG. 8B of the schematic diagram, the amount of change in the CCD output of the effective pixel is small with the abnormally strong supersaturated incident light that becomes the CCD output signal of the effective pixel that is further oversaturated and reaches the limit level. Even if white is stretched, the saturated incident light level is not effective due to many approximation errors. Approximate detection of V-OBmin and V-OB smear level and dark current of V-OB or a dark current level of a pixel called abnormally high is a constant approximation calculation such as 80 dB from the sum of dark currents of pixels called white scratches. The supersaturated incident light level of the effective pixel can be approximated with high accuracy.
As shown in Fig. 8C (c) of the schematic diagram, if the CCD output signal of V-OBmin reaches white level even if the CCD output signal level of V-OBmin becomes saturated, CCD output of V-OBmin expanded white. The supersaturated incident light level that is strong against abnormal effective pixels can be approximated by a constant approximation such as 80 dB from the signal.

そこで、過飽和直前レベルの垂直スミアを、白伸長したV−OB信号の垂直画素の最少値V-OBminから近似検出して、比較器で垂直スミアの最大値を検出し、AGCと電子増倍率とで定まる垂直転送路が過飽和状態となる第一の所定値以上になると、レンズ等の光学系の光学絞りを絞り、FEP内のAGCを高くするかEM−CCDのCMG電圧を高くして電子増倍率を高くして感度を一定にすれば、過飽和入射光の映像の画面の過飽和レベルの白状態と画面上部の沈みこみと水平スミアが防止できる。最小値V-OBminでなくても、V−OBの各垂直画素(列)信号の最小値からN(Nは自然数)番目の値、最大値からM(Mは自然数)番目の値以下の値の平均値、または他の最大値からM番目の値以下の値から算出される代表値信号の少なくとも1つを算出しても良い。レンズ等の光学系の光学絞りが絞り切り側の制限に達し光学絞りで入射光量を低減できない場合で水平転送路も過飽和状態ととなるさらに高い第二の所定値以上になると、電子シャッタで実効感度を低下させ、FEP内のAGCを高くすれば、過飽和入射光の映像の画面の過飽和レベルの白状態と画面上部の沈みこみと水平スミアは低減できる。   Therefore, the vertical smear immediately before the supersaturation is approximately detected from the minimum value V-OBmin of the vertical pixel of the white expanded V-OB signal, and the maximum value of the vertical smear is detected by the comparator, and the AGC, electron multiplication factor, When the vertical transfer path determined by (1) exceeds the first predetermined value that is in a supersaturated state, the optical aperture of the optical system such as a lens is stopped and the AGC in the FEP is increased or the CMG voltage of the EM-CCD is increased to increase the electron. If the sensitivity is made constant by increasing the magnification, it is possible to prevent the white state of the supersaturated level of the image of the supersaturated incident light image, the sinking of the upper part of the screen, and the horizontal smear. Even if it is not the minimum value V-OBmin, the value of the N-th (N is a natural number) value from the minimum value of each vertical pixel (column) signal of V-OB, and the value not more than the M-th (M is a natural number) value from the maximum value Alternatively, at least one of the representative value signals calculated from the average value or the maximum value of the Mth value or less may be calculated. If the optical diaphragm of the optical system such as a lens reaches the limit on the diaphragm opening side and the incident light quantity cannot be reduced by the optical diaphragm, and the horizontal transfer path becomes oversaturated, the electronic shutter will be effective. If the sensitivity is lowered and the AGC in the FEP is increased, the white state of the supersaturated level of the image of the supersaturated incident light image, the subsidence at the top of the screen, and the horizontal smear can be reduced.

特にレンズ等の光学系の光学絞りが絞り切り側の制限に達し光学絞りで入射光量を低減できない場合で水平転送路も過飽和状態ととなるさらに高い第二の所定値以上になると、電子シャッタで実効感度を低下させ、FEP内のVGAを高くすれば、過飽和入射光による垂直転送路と水平転送路の過飽和レベルの映像の白状態と画面上部の沈みこみと水平スミアとは低減できる。CCD撮像素子のフォトダイオードの信号電荷電子をオーバーフロードレインに掃き捨てる(電子シャッタを行う)ことにより感度を低下させると垂直スミアは一定のレベルのまま感度を低下させることとなり、相対的に垂直スミアは増加する。しかし、垂直スミアは白圧縮補正部5の減算器11で減算しているので目立たない。
AGCを高くするか電子増倍率を高くすると、雑音は増加するが、画面上部の垂直スミアは沈み、水平方向にも白いすじ状の水平スミアが明らかになることを防止できる。異常に強い過飽和入射光の強度が更に高くなると、過飽和レベルの白が画面全体に広がることは確実に防止できる。
In particular, when the optical diaphragm of an optical system such as a lens reaches the limit on the diaphragm opening side and the amount of incident light cannot be reduced by the optical diaphragm, and the horizontal transfer path becomes oversaturated, the electronic shutter will If the effective sensitivity is lowered and the VGA in the FEP is increased, the white state of the supersaturated image in the vertical transfer path and the horizontal transfer path due to the supersaturated incident light, the sinking in the upper part of the screen, and the horizontal smear can be reduced. When the sensitivity is lowered by sweeping signal charge electrons of the photodiode of the CCD image pickup device to the overflow drain (using an electronic shutter), the vertical smear is lowered at a constant level, and the vertical smear is relatively To increase. However, the vertical smear is not noticeable because it is subtracted by the subtractor 11 of the white compression correction unit 5.
When the AGC is increased or the electron multiplication factor is increased, the noise increases, but the vertical smear at the top of the screen sinks, and it is possible to prevent the white streak-like horizontal smear from becoming apparent in the horizontal direction. If the intensity of the abnormally strong supersaturated incident light is further increased, it is possible to reliably prevent the supersaturated white from spreading over the entire screen.

つまり、黒レベル以下への沈みこみまたは過飽和レベルの白を低減するなどの映像信号の階調範囲が実効的に拡大できる。過飽和入射光の検出はV−OBの画素の中で暗電流が異常に少ない黒キズと称される画素を含んでもかまわない。つまり、V−OBの複数ラインの各垂直画素(列)信号の最小値を含む信号から過飽和入射光の検出をしても良い。   That is, it is possible to effectively expand the gradation range of the video signal such as subsidence below the black level or reducing white at the supersaturation level. The detection of the supersaturated incident light may include a pixel called a black flaw among the V-OB pixels in which the dark current is abnormally small. That is, supersaturated incident light may be detected from a signal including the minimum value of each vertical pixel (column) signal of a plurality of lines of V-OB.

以上EM−CCDを用いた撮像装置について詳細に説明したが、本発明は、ここに記載された撮像装置に限定されるものではなく、上記以外のCCDを用いた撮像装置他の撮像装置に広く適用することができることは言うまでもない。   Although the image pickup apparatus using the EM-CCD has been described in detail above, the present invention is not limited to the image pickup apparatus described here, and can be widely applied to other image pickup apparatuses using other CCDs. It goes without saying that it can be applied.

1:撮像装置、2:光学系、3:EM−CCD、4:FEP、
5:白圧縮補正部、6:暗電流スミア検出部、7:映像信号処理部、
8:CCD駆動部(TG)、9:CPU、10:利得可変部(D.AGC)
11,105:減算器、12:係数部、13,104,111,112:加算器、
14:冷却部、21,22,23,115:比較部、71〜76:ラインメモリ部、
101,103:白伸長部、
102:bit制限部(上位bit廃棄〜除算部〜白再圧縮部)
106,113:除算器、107:乗算器、108:平均部、
109,114:基準メモリ部、110:画面メモリ部
1: imaging device, 2: optical system, 3: EM-CCD, 4: FEP,
5: White compression correction unit, 6: Dark current smear detection unit, 7: Video signal processing unit,
8: CCD drive unit (TG), 9: CPU, 10: Variable gain unit (D.AGC)
11, 105: subtractor, 12: coefficient part, 13, 104, 111, 112: adder,
14: Cooling unit, 21, 22, 23, 115: Comparison unit, 71-76: Line memory unit,
101, 103: white extension part,
102: bit limiter (higher-order bit discard-division unit-white recompression unit)
106, 113: Divider, 107: Multiplier, 108: Average part,
109, 114: reference memory unit, 110: screen memory unit

Claims (4)

固体撮像素子と該固体撮像素子の受光面の有効画素から出力される映像信号を取得する第1の取得部と前記固体撮像素子の受光面の上部または下部の遮光した画素から出力される信号を取得する第2の取得部とを有する固体撮像装置において、
遮光時の前記第1の取得部で取得した有効画素から出力される信号と遮光時の前記第2の取得部で取得した遮光した画素から出力される信号とを記憶する第一の手段と前記第2の取得部で取得した遮光した複数ラインの上部及び下部のV―OBのH―OBの画素から出力される信号の最大値からM(Mは自然数)番目の値以下の値の平均値を算出する手段とを有し、前記記憶する第一手段に暗電流の基準値を記憶し前記第2の取得部で取得した遮光した複数ラインの上部及び下部のV―OBのH―OBの画素から出力される信号の最大値からM(Mは自然数)番目の値以下の値の平均値を算出し、該遮光した複数ラインの上部及び下部のV―OBのH―OBの画素から出力される信号の最大値からM(Mは自然数)番目の値以下の値の平均値と該遮光した複数ラインの上部及び下部のV―OBのH―OBの画素から出力される信号最大値からM(Mは自然数)番目の値以下の値の平均値の基準値との比を前記記憶する第一手段の暗電流の基準値にかけて近似暗電流信号を算出し、
前記第1の取得部で取得した有効画素から出力される映像信号の高レベルを伸長した信号と前記算出した近似暗電流信号の高レベルを伸長した信号との差分信号を前記固体撮像装置の出力映像信号に用いることを特徴とする撮像方法。
A solid-state imaging device, a first acquisition unit that acquires video signals output from effective pixels on the light-receiving surface of the solid-state imaging device, and signals output from light-shielded pixels above or below the light-receiving surface of the solid-state imaging device In a solid-state imaging device having a second acquisition unit to acquire,
First means for storing a signal output from the effective pixel acquired by the first acquisition unit at the time of light shielding and a signal output from the light-shielded pixel acquired by the second acquisition unit at the time of light shielding; The average value of values equal to or less than the Mth (M is a natural number) value from the maximum value of the signals output from the V-OB H-OB pixels on the upper and lower V-OB lines acquired by the second acquisition unit. and means for calculating a, H-OB of the upper and lower V-OB multiple lines for storing a reference value of the dark current to the first means for the storage and shielding acquired by the second acquisition unit The average value of the values equal to or less than the Mth (M is a natural number) value is calculated from the maximum value of the signal output from each pixel, and from the V-OB H-OB pixels at the upper and lower portions of the shaded lines. Average value of values less than M (M is a natural number) from the maximum value of the output signal The ratio between the reference value of the average values of the upper and M (M is a natural number) from the maximum value at the bottom of the V-OB signals output from the pixels of the H-OB-th value following values of a plurality of lines that the shielding the calculated approximate dark signal over the reference value of the dark current of the first means for the storage,
The output of the solid-state imaging device a difference signal between the first signal extended high levels of approximation dark current signal the calculated high extended signal of the video signal output from the effective pixels obtained by the obtaining unit An imaging method characterized by being used for a video signal .
固体撮像素子と該固体撮像素子の受光面の有効画素から出力される映像信号を取得する第1の取得部と前記固体撮像素子の受光面の上部または下部の遮光した画素から出力される信号を取得する第2の取得部とを有する固体撮像装置において、
遮光時の前記第1の取得部で取得した有効画素から出力される信号と遮光時の前記第2の取得部で取得した遮光した画素から出力される信号とを記憶する第一の手段と前記第2の取得部で取得した遮光した複数ラインの上部及び下部のV―OBのH―OBの画素から出力される信号の最小値からN(Nは自然数)番目の値を算出する手段とを有し、前記記憶する第一手段に暗電流の基準値を記憶し前記第2の取得部で取得した遮光した複数ラインの上部及び下部のV―OBのH―OBの画素から出力される信号の最小値からN(Nは自然数)番目の値を算出し、該遮光した複数ラインの上部及び下部のV―OBのH―OBの画素から出力される信号の最小値からN(Nは自然数)番目の値と該遮光した複数ラインの上部及び下部のV―OBのH―OBの画素から出力される信号の最小値からN(Nは自然数)番目の値基準値との比を前記記憶する第一手段の暗電流の基準値にかけて近似暗電流信号を算出し、
前記第1の取得部で取得した有効画素から出力される映像信号の高レベルを伸長した信号と前記算出した近似暗電流信号の高レベルを伸長した信号との差分信号を前記固体撮像装置の出力映像信号に用いることを特徴とする撮像方法。
A solid-state imaging device, a first acquisition unit that acquires video signals output from effective pixels on the light-receiving surface of the solid-state imaging device, and signals output from light-shielded pixels above or below the light-receiving surface of the solid-state imaging device In a solid-state imaging device having a second acquisition unit to acquire,
First means for storing a signal output from the effective pixel acquired by the first acquisition unit at the time of light shielding and a signal output from the light-shielded pixel acquired by the second acquisition unit at the time of light shielding; Means for calculating the Nth (N is a natural number) value from the minimum value of the signals output from the V-OB H-OB pixels of the upper and lower shaded lines acquired by the second acquisition unit; a, it is outputted from the H-OB pixels of upper and lower V-OB multiple lines for storing a reference value of the dark current to the first means for the storage and shielding acquired by the second acquisition unit The Nth (N is a natural number) value is calculated from the minimum value of the signal, and N (N is the minimum value of the signal output from the V-OB H-OB pixels on the upper and lower sides of the shaded lines). natural number) th value and the plurality of lines that the light-shielding upper and lower portion of the V-OB Calculating an approximate dark signal the ratio of the minimum value of the signal output from the pixels of the H-OB N (N is a natural number) and the reference value of the second value over the reference value of the dark current of the first means for the storage And
The output of the solid-state imaging device a difference signal between the first signal extended high levels of approximation dark current signal the calculated high extended signal of the video signal output from the effective pixels obtained by the obtaining unit An imaging method characterized by being used for a video signal .
固体撮像素子と該固体撮像素子の受光面の有効画素から出力される映像信号を取得する第1の取得部と前記固体撮像素子の受光面の上部または下部の遮光した画素から出力される信号を取得する第2の取得部とを有する固体撮像装置において、
遮光時の前記第1の取得部で取得した有効画素から出力される信号と遮光時の前記第2の取得部で取得した遮光した画素から出力される信号とを記憶する第一の手段と前記第2の取得部で取得した遮光した複数ラインの上部及び下部のV―OBのH―OBの画素から出力される信号の最大値からM(Mは自然数)番目の値以下の値の平均値を算出する手段とを有し、前記記憶する第一の手段に暗電流の基準値を記憶し前記第2の取得部で取得した遮光した複数ラインの上部及び下部のV―OBのH―OBの画素から出力される信号の最大値からM(Mは自然数)番目の値以下の値の平均値を算出し、該遮光した複数ラインの上部及び下部のV―OBのH―OBの画素から出力される信号の最大値からM(Mは自然数)番目の値以下の値の平均値と該遮光した複数ラインの上部及び下部のV―OBのH―OBの画素から出力される信号の最大値からM(Mは自然数)番目の値以下の値の平均値の基準値との比を前記記憶する第一の手段の暗電流の基準値にかけて近似暗電流信号を算出し、
前記第1の取得部で取得した有効画素から出力される映像信号の高レベルを伸長した信号と前記算出した近似暗電流信号の高レベルを伸長した信号との差分信号を算出する手段を有し、該差分信号を算出する手段により、前記算出した近似暗電流信号の高レベルを伸長した信号と、前記伸長した信号と前記第1の取得部で取得した有効画素から出力される映像信号の高レベルを伸長した信号との差分信号を算出し、該差分信号を前記固体撮像装置の出力映像信号に用いることを特徴とする固体撮像装置
A solid-state imaging device, a first acquisition unit that acquires video signals output from effective pixels on the light-receiving surface of the solid-state imaging device, and signals output from light-shielded pixels above or below the light-receiving surface of the solid-state imaging device In a solid-state imaging device having a second acquisition unit to acquire,
First means for storing a signal output from the effective pixel acquired by the first acquisition unit at the time of light shielding and a signal output from the light-shielded pixel acquired by the second acquisition unit at the time of light shielding; The average value of values equal to or less than the Mth (M is a natural number) value from the maximum value of the signals output from the V-OB H-OB pixels on the upper and lower V-OB lines acquired by the second acquisition unit. H-OB of the upper and lower V-OBs of a plurality of light-shielded lines stored in the first acquisition unit and acquired by the second acquisition unit. The average value of the values equal to or less than the Mth (M is a natural number) value is calculated from the maximum value of the signal output from each pixel, and from the V-OB H-OB pixels at the upper and lower portions of the shaded lines. Average value of values less than M (M is a natural number) from the maximum value of the output signal The ratio of the maximum value of signals output from the H-OB pixels of V-OB at the upper and lower portions of the plurality of shielded lines to the reference value of the average value of the M or less (M is a natural number) value Calculating the approximate dark current signal over the dark current reference value of the first means for storing,
And means for calculating a difference signal between the first signal extended high levels of approximation dark current signal the calculated high extended signal of the video signal output from the effective pixels obtained by the obtaining unit , A signal obtained by expanding the high level of the calculated approximate dark current signal by the means for calculating the difference signal, and the height of the video signal output from the expanded signal and the effective pixel acquired by the first acquisition unit. A solid-state imaging device characterized by calculating a difference signal from a signal whose level is expanded and using the difference signal as an output video signal of the solid-state imaging device .
固体撮像素子と該固体撮像素子の受光面の有効画素から出力される映像信号を取得する第1の取得部と前記固体撮像素子の受光面の上部または下部の遮光した画素から出力される信号を取得する第2の取得部とを有する固体撮像装置において、
遮光時の前記第1の取得部で取得した有効画素から出力される信号と遮光時の前記第2の取得部で取得した遮光した画素から出力される信号とを記憶する第一の手段と前記第2の取得部で取得した遮光した複数ラインの上部及び下部のV―OBのH―OBの画素から出力される信号の最小値からN(Nは自然数)番目の値を算出する手段とを有し、前記記憶する第一の手段に暗電流の基準値を記憶し前記第2の取得部で取得した遮光した複数ラインの上部及び下部のV―OBのH―OBの画素から出力される信号の最小値からN(Nは自然数)番目の値を算出し、該遮光した複数ラインの上部及び下部のV―OBのH―OBの画素から出力される信号の最小値からN(Nは自然数)番目の値と該遮光した複数ラインの上部及び下部のV―OBのH―OBの画素から出力される信号の最小値からN(Nは自然数)番目の値の基準値との比を前記記憶する第一の手段の暗電流の基準値にかけて近似暗電流信号を算出し、
前記第1の取得部で取得した有効画素から出力される映像信号の高レベルを伸長した信号と前記算出した近似暗電流信号の高レベルを伸長した信号との差分信号を算出する手段を有し、該差分信号を算出する手段により、前記算出した近似暗電流信号の高レベルを伸長した信号と、前記伸長した信号と前記第1の取得部で取得した有効画素から出力される映像信号の高レベルを伸長した信号との差分信号を算出し、該差分信号を前記固体撮像装置の出力映像信号に用いることを特徴とする固体撮像装置
A solid-state imaging device, a first acquisition unit that acquires video signals output from effective pixels on the light-receiving surface of the solid-state imaging device, and signals output from light-shielded pixels above or below the light-receiving surface of the solid-state imaging device In a solid-state imaging device having a second acquisition unit to acquire,
First means for storing a signal output from the effective pixel acquired by the first acquisition unit at the time of light shielding and a signal output from the light-shielded pixel acquired by the second acquisition unit at the time of light shielding; Means for calculating the Nth (N is a natural number) value from the minimum value of the signals output from the V-OB H-OB pixels of the upper and lower shaded lines acquired by the second acquisition unit; The dark current reference value is stored in the first storing means, and output from the V-OB H-OB pixels on the upper and lower sides of the plurality of light-shielded lines acquired by the second acquisition unit. The Nth (N is a natural number) value is calculated from the minimum value of the signal, and N (N is the minimum value of the signal output from the V-OB H-OB pixels on the upper and lower sides of the shaded lines). (Natural number) th value and V-OB of the upper and lower parts of the shaded lines The approximate dark current signal is calculated by multiplying the ratio of the minimum value of the signal output from the H-OB pixel to the reference value of the Nth (N is a natural number) value and the reference value of the dark current stored in the first means. And
Means for calculating a differential signal between a signal obtained by extending a high level of a video signal output from an effective pixel acquired by the first acquisition unit and a signal obtained by extending a high level of the calculated approximate dark current signal; , A signal obtained by expanding the high level of the calculated approximate dark current signal by the means for calculating the difference signal, and the height of the video signal output from the expanded signal and the effective pixel acquired by the first acquisition unit. A solid-state imaging device characterized by calculating a difference signal from a signal whose level is expanded and using the difference signal as an output video signal of the solid-state imaging device .
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