JP2013239534A - Method for manufacturing semiconductor product and semiconductor manufacturing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method capable of manufacturing a high-quality semiconductor product, and a semiconductor manufacturing device.SOLUTION: A method for manufacturing a semiconductor product comprises a semiconductor product manufacturing step S54, a PR step S55, and a manufacturing condition correction step S56. The PR step S55 acquires a Franz-Keldysh oscillatory waveform about a surface of a semiconductor or a laminated film on the surface of the semiconductor by a photoreflectance method during the manufacturing step S54, and acquires at least one numeric value of a surface recombination velocity, electric field strength, a Fermi level, and a dangling bond density on the basis of the Franz-Keldysh oscillatory waveform. The manufacturing condition correction step S56 corrects the conditions of the manufacturing step S54 on the basis of the acquired numeric value during the manufacturing step S54.

Description

  The present invention relates to a semiconductor product manufacturing method and a semiconductor manufacturing apparatus.

  Conventionally, for example, as disclosed in Patent Documents 1 to 12 below, it is known to use a photoreflectance method (PR method) in a semiconductor manufacturing technique. According to the photoreflectance method, it is possible to accurately observe the surface state of a semiconductor device or the like that is a measurement object by non-destructive non-contact.

  In particular, in Japanese Patent Application Laid-Open No. 7-50283, which is Patent Document 2, in etching of a semiconductor composed of two or more semiconductor layers and having different complex permittivity of each semiconductor layer, the complex permittivity is observed simultaneously while etching, A technique for controlling etching based on this change is disclosed. In this publication, it is disclosed that a photoreflectance method is used for the etching control. Specifically, a technique of performing photoreflectance measurement through an etchant during etching and controlling etching based on a change in the measured value. Is disclosed. Details thereof are described in paragraph 0024 of Patent Document 2. In the paragraph 0024, etching is performed while measuring reflectance by the photoreflectance method, the energy range for measuring the reflectance spectrum is narrowed to the vicinity of the expected forbidden band width, and the forbidden band is calculated from the reflectance spectrum. There is a description of optimizing the calculation program for obtaining the width.

JP-A-6-342773 Japanese Patent Laid-Open No. 7-50283 JP-A-10-199949 JP 2009-272447 A JP 2009-4706 A JP 2003-115514 A Japanese Patent Laid-Open No. 2-121725 JP 2002-26094 A JP 2004-247380 A JP 2006-49659 A JP 7-218355 A JP-A-7-63667

Photovoltaic effects on Franz-Keldysh oscillations in photoreflectance spectra: Application to determination of surface Fermi level and surface recombination velocity in undoped GaAs / n-type GaAs epitaxial layer structure, Hideo Takeuchi, et al, JOURNAL OF APPLIED PHYSICS Vol.97,063708 ( 2005)

  It is known that a PR signal acquired by the photoreflectance method has a plurality of vibration waveforms observed when the horizontal axis represents the probe light energy and the vertical axis represents the amount of change in reflectance (see FIG. Non-patent document 1). Such multiple vibration waveforms are called Franz-Keldish vibrations.

  Various detailed information about the semiconductor surface such as the surface recombination velocity can be obtained from the vibration period and the probe light intensity dependency in the Franz-Keldish vibration waveform. The inventor of the present application has found a technique of utilizing such detailed information, that is, feeding back various information obtained from the Franz-Keldish vibration waveform to manufacturing conditions in real time during the manufacturing process of the semiconductor product.

  Although Patent Document 2 describes a technique of performing etching while measuring reflectance by a photoreflectance method, there is no description or suggestion of using a Franz-Keldish vibration waveform. As a premise, in order to achieve the purpose of obtaining various detailed information on the semiconductor surface from the Franz-Keldish vibration waveform, it is also necessary to include the small vibration waveform on the high energy side in the Franz-Keldish vibration waveform There is. However, in Patent Document 2, as described in paragraph 0024, it is described that the energy range for measuring the reflectance spectrum is narrowed to the vicinity of the expected forbidden band width, and this uses a part of the reflectance spectrum. It means that. That is, as a result, Patent Document 2 merely evaluates information (PR signal) corresponding to at most one or two vibrations (peaks) appearing on the low energy side of the Franz-Keldish vibration waveform. As described above, Patent Document 2 does not have a viewpoint of utilizing the Franz-Keldish vibration waveform in the photoreflectance method for manufacturing a semiconductor product, and there is no description related to this in other documents. The prior art still leaves room for improvement in terms of improving the quality of semiconductor products.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor product manufacturing method and a semiconductor manufacturing apparatus capable of manufacturing a high-quality semiconductor product.

1st invention is a manufacturing method of a semiconductor product, a manufacturing process for manufacturing a semiconductor product,
During the manufacturing process, a Franz-Keldish vibration waveform is obtained by a photoreflectance method for a semiconductor surface or a laminated film on the semiconductor surface, and a surface recombination velocity, electric field strength is obtained based on the Franz-Keldish vibration waveform. A PR process for obtaining at least one value of Fermi level and dangling bond density;
During the manufacturing process, a manufacturing condition correction process for correcting the conditions of the manufacturing process based on the numerical value;
It is characterized by having.

A second invention is a semiconductor manufacturing apparatus,
Manufacturing means for manufacturing semiconductor products;
During the manufacturing process of the manufacturing means, a Franz-Keldish vibration waveform is obtained by a photoreflectance method for a semiconductor surface or a laminated film of the semiconductor surface, and surface recombination is performed based on the Franz-Keldish vibration waveform PR means for obtaining at least one value of velocity, electric field strength, Fermi level and dangling bond density;
During the manufacturing process, manufacturing condition correction means for correcting the conditions of the manufacturing process based on the numerical value;
It is characterized by having.

  According to the present invention, the manufacturing conditions can be optimized during the manufacturing process by feeding back the evaluation result by the photoreflectance method to the manufacturing conditions in real time during the manufacturing process. As a result, a high quality product can be manufactured.

It is a figure which shows the thermal CVD apparatus 1 concerning Embodiment 1 of this invention. It is a manufacturing flow which shows the manufacturing method of the semiconductor product concerning Embodiment 1 of this invention. It is one Example of the photoreflectance measured using the GaAs wafer. It is a figure which shows the ECR sputtering apparatus concerning Embodiment 2 of this invention. It is a manufacturing flow which shows the manufacturing method of the semiconductor product concerning Embodiment 2 of this invention. It is a figure which shows the ICP-Deep-RIE apparatus 200 concerning Embodiment 3 of this invention. It is a manufacturing flow which shows the manufacturing method of the semiconductor product concerning Embodiment 3 of this invention. It is a figure which shows the vapor deposition apparatus 300 concerning Embodiment 4 of this invention. It is a manufacturing flow which shows the manufacturing method of the semiconductor product concerning Embodiment 4 of this invention. It is a figure which shows the sputtering device 400 concerning Embodiment 5 of this invention. It is a manufacturing flow which shows the manufacturing method of the semiconductor product concerning Embodiment 5 of this invention. It is a figure which shows the ion implantation apparatus 500 concerning Embodiment 6 of this invention. It is a manufacturing flow which shows the manufacturing method of the semiconductor product concerning Embodiment 6 of this invention. It is a figure which shows the wafer cleaning apparatus 600 concerning Embodiment 7 of this invention. It is a manufacturing flow which shows the manufacturing method of the semiconductor product concerning Embodiment 7 of this invention. It is a figure which shows the liquid phase growth apparatus 700 concerning Embodiment 8 of this invention. It is a manufacturing flow which shows the manufacturing method of the semiconductor product concerning Embodiment 8 of this invention. It is a figure which shows the plating apparatus 800 concerning Embodiment 9 of this invention. It is a manufacturing flow which shows the manufacturing method of the semiconductor product concerning Embodiment 9 of this invention. It is a figure which shows the CMP grinding | polishing apparatus 900 concerning Embodiment 10 of this invention. It is a manufacturing flow which shows the manufacturing method of the semiconductor product concerning Embodiment 10 of this invention. It is a figure which shows the plating apparatus 1000 concerning Embodiment 11 of this invention. It is a figure which shows the wafer cleaning apparatus 1100 concerning Embodiment 12 of this invention. It is a figure for demonstrating the manufacturing method of the semiconductor product concerning Embodiment 13 of this invention, and shows the band diagram of AlGaN / GaN HEMT. It is a figure which shows the thermal CVD apparatus 1200 concerning Embodiment 14 of this invention.

Hereinafter, preferred embodiments for carrying out the present invention will be described with reference to the drawings. The contents of each embodiment are as listed below. In addition, the same code | symbol is attached | subjected to the same or corresponding structure.
Embodiment 1 FIG. Embodiment 2 of manufacturing method and manufacturing apparatus for performing thermal CVD 2. Manufacturing method and manufacturing apparatus for performing ECR 3. Manufacturing method and manufacturing apparatus for implementing ICP Deep RIE 4. Manufacturing method and manufacturing apparatus for performing vapor deposition 5. Manufacturing method and manufacturing apparatus for performing sputtering 6. Manufacturing method and manufacturing apparatus for carrying out ion implantation process 7. Manufacturing method and manufacturing apparatus for performing wafer cleaning process 8. Manufacturing method and manufacturing apparatus for performing liquid phase growth 9. Manufacturing method and manufacturing apparatus for carrying out plating process 10. Manufacturing method and manufacturing apparatus for carrying out polishing step Manufacturing method and manufacturing apparatus for performing plating process (sonic stimulation)
Embodiment 12 FIG. Manufacturing method and manufacturing apparatus for performing wafer cleaning process (sonic stimulation)
Embodiment 13 FIG. Embodiment 14. Manufacturing method for monitoring quantum well and heterojunction for generating two-dimensional electron gas by photoreflectance. Manufacturing method and manufacturing apparatus using photoreflectance, Raman scattering, and photoluminescence as evaluation means

Embodiment 1 FIG.
Embodiment 1 of the present invention is a manufacturing method and manufacturing apparatus for performing thermal CVD.

[Apparatus according to Embodiment 1]
FIG. 1 is a diagram showing a thermal CVD apparatus 1 according to a first embodiment of the present invention. In FIG. 1, a semiconductor wafer W is placed on a lower electrode 2 for overheating to a high temperature. The upper electrode 3 is an electrode that is installed in parallel with the lower electrode 2 and creates a high-temperature state between the upper electrode 3 and the lower electrode 2. A heated gas 4 is generated between the lower electrode 2 and the upper electrode 3, and the gas is decomposed at this portion to grow a thin film on the semiconductor wafer W as a substrate. The heater power source 5 is a heater power source for heating the upper electrode 3. The heater power source 6 is a heater power source for heating the lower electrode 2. The chamber 7 is usually made of thick stainless steel. The gas introduction system 8 is a gas introduction system for introducing gas into the chamber 7, and is provided with a valve 8a. The vacuum pump 9 is for discharging the gas introduced into the chamber to the outside.

  A photoreflectance probe light generator 10 emits probe light 11. The photodetector 12 is a photodetector for receiving the probe light 11 reflected by the semiconductor wafer W. The photoreflectance pump light generator 13 emits the pump light 14 onto the semiconductor wafer W, thereby stimulating the semiconductor.

  The thermal CVD apparatus 1 includes a control unit 20. The control unit 20 is connected to the heater power supplies 5 and 6, the valve 8 a, the probe light generator 10, the photodetector 12, the pump light generator 13, and the like.

[Production Method of Embodiment 1]
Next, a semiconductor manufacturing process will be described. FIG. 2 is a manufacturing flow showing the manufacturing method of the semiconductor product according to the first embodiment of the present invention.

  In general, a semiconductor product is a semiconductor wafer that is finally completed by producing a semiconductor wafer, optionally performing epi-growth, forming a pattern through resist coating, exposure, and development processes, and repeatedly performing etching and film formation. is there. However, in this specification, the term “semiconductor product” is used not only when referring to a final finished product but also when referring to a half-finished product.

  First, the semiconductor wafer W is placed on the lower electrode 2 in the chamber 7, and a wafer is set (step S51).

Next, gas introduction is performed (step S52). Here, the valve 8a of the gas introduction system 8 is closed, the internal gas (air) is exhausted from the vacuum exhaust system 9, and the inside of the chamber 7 is evacuated. The lower electrode 2 is heated and set to about 300 ° C. A desired gas is introduced from the gas introduction system 8 and a valve (not shown) of the vacuum exhaust system 9 is controlled to balance the gas exhaust amount and set to a constant pressure. Usually, it is kept at a low vacuum of several torr. When etching a semiconductor, an etching gas such as CHF ₃ , CF ₄ , O ₂ , or Ar is introduced. When forming a film, a film forming gas such as SiH ₄ , H ₂ , or NH ₃ is introduced.

  When a certain pressure is reached, heating is performed (step S53), the heater power supply 5 is turned on, and a high temperature state of 400 ° C to 1200 ° C is formed inside the chamber 7.

Thereby, film formation is performed (step S55). The introduced gas is decomposed by heat. When the semiconductor wafer W is exposed to the decomposed element, the semiconductor is etched and the silicon nitride film is formed.

  Next, photoreflectance evaluation by the photoreflectance method (PR method) is performed (step S55), and manufacturing conditions are adjusted based on the evaluation result (step S56). A detailed description of this part will be given later.

  If the film formation is completed, the current manufacturing process ends. If the film formation is not completed, the process loops to step S52 (step S57).

[Use of photoreflectance method]
(Basic technology)
The present embodiment is characterized in that a photoreflectance monitor is newly added in this semiconductor manufacturing process. The probe light 11 is generated from the probe light generator 10 and irradiated onto the semiconductor wafer W. The irradiated probe light 11 is reflected by the semiconductor wafer W and detected by the photodetector 12. The light intensity is generally about several μW / cm ² to several tens μW / cm ² . At this time, the pump light generator 13 irradiates the pump light 14 so as to overlap the place where the probe light 11 is irradiated onto the semiconductor wafer W. The pump light 14 generally uses an irradiation intensity of several tens of mW / cm ² at a wavelength of about 532 nm. The pump light 14 blinks in a pulse shape in a short time. The frequency is usually 200 Hz to 2 KHz. By flashing the pump light 14 in a pulse shape, the optical properties of the semiconductor change and the reflectance of the probe light 11 changes. This change is detected by the photodetector 12. Since the rate of change is small, a lock-in amplifier is often used. Next, the probe light generator 10 is monochromatized using a spectroscope to change the irradiation wavelength.

  FIG. 3 shows an example of photoreflectance measured using a GaAs wafer. The horizontal axis represents the probe light energy, and the vertical axis represents the amount of change in reflectance. Multiple vibration waveforms are observed. This is called the Franz Keldish oscillation. The electric field strength, surface recombination velocity, Fermi level, and dangling bond density of the semiconductor surface can be determined from the vibration period and probe light intensity dependence in this Franz-Keldish vibration waveform. There is a feature that very detailed information can be obtained with high accuracy. These principles are described in Photovoltaic effects on Franz-Keldysh oscillations in photoreflectance spectra: Application to determination of surface Fermi level and surface recombination velocity in undoped GaAs / n-type GaAs epitaxial layer structure, Hideo Takeuchi, et al, JOURNAL OF APPLIED PHYSICS Vol. 97,063708 (2005), which has already been publicly known and will not be described in detail.

  In Patent Document 2, as a result, one or two vibrations (peaks) appearing on the low energy side of the Franz-Keldish vibration waveform are evaluated. That is, in Patent Document 2, as a result, only information that appears in the peak near 1.42 eV or the next peak near 1.46 eV in FIG. 3 is used. This makes it impossible to acquire detailed information such as the electric field strength as described above. Only when an analysis including a minute vibration waveform appearing after 1.5 eV is performed, information such as the electric field strength can be obtained.

  When this embodiment is used, for example, in the case of thermal CVD, the photoreflectance signal is measured during film formation, the state of the semiconductor is checked, and when the surface state becomes rough, the surface recombination rate Therefore, it is possible to monitor the increase in electric field strength and the increase in electric field strength, so that it is possible to quickly perform feedback such as changing the temperature and gas pressure, and to achieve good film formation.

(Specific configuration of the present embodiment)
(1) Use of PR method The state of a semiconductor to be evaluated by the PR method in this embodiment is the crystallinity of a growing thin film. This crystallinity includes crystal defects, impurities, strain, composition ratio, mobility, surface roughness, temperature during growth, etc. in the case of multi-component materials.
Moreover, as a physical quantity monitored by the PR method, when the surface recombination rate is increased, the generation of crystal defects and the mixing of impurities can be considered. When the electric field strength increases, the crystal strain increases and the mobility decreases. When the PR spectrum intensity is reduced or the half-value width of the waveform is widened to become a broad waveform, the surface roughness is increased.

(2) Evaluation means of the present embodiment How to evaluate using the PR signal in the present embodiment is as follows.
(I) The electric field strength is obtained from the period of the PR spectrum. The longer the period, the stronger the electric field.
(Ii) For the surface recombination velocity, the electric field strength is similarly determined from the period of the PR spectrum, and the intensity dependency of the probe light is further measured. When the probe light intensity is increased, the spectrum period becomes longer and the electric field intensity decreases. The surface recombination velocity is measured by analyzing this variation tendency. The larger the surface recombination velocity, the longer the PR spectrum period and the greater the electric field strength, making it difficult to distinguish between the electric field strength and the recombination velocity. However, the surface recombination velocity can be accurately determined by simulation from the dependence of the probe light. Different.
(Iii) When surface roughness occurs, the PR signal decreases or the signal becomes broad.
(Iv) When there are many crystal defects, impurities, and strains, the electric field strength and the surface recombination rate increase.
(V) In the case of a multi-component system, if the composition ratio is shifted, the wavelength of the PR spectrum is shifted overall.
(Vi) When the temperature during growth increases, the entire PR spectrum shifts to the low energy side (wavelength side). From this, the temperature can be determined.
(Vii) Information in the depth direction can be obtained by changing the wavelength of the PR probe light. When a long wavelength probe light is used, it is possible to measure deep.
(Viii) Generally, the better the crystallinity, the lower the electric field strength and the lower the surface recombination rate.

(3) Feedback means of the present embodiment In the present embodiment, as to how the evaluation result by the PR method is fed back to which manufacturing condition, the controller performs the following operation. When it is recognized that the crystallinity has decreased based on the above evaluation criteria, the control unit 20 performs at least one of the following controls.
(I) The heat generation amount (energization amount) of the heater power sources 5 and 6 is controlled so that the temperature in the furnace becomes high.
(Ii) The valve 8a is controlled so as to limit the amount of supply gas in order to reduce the growth rate.
(Iii) Increasing the flow rate of an inert carrier gas such as hydrogen or nitrogen introduced together with the gas so that atoms are accurately grown at crystal positions. This controls a valve (not shown) for separately adjusting the flow rate of the inert carrier gas.

(4) As an effect of the present embodiment, since the growth conditions are adjusted, a high-quality crystal can be obtained.

[Effect of Embodiment 1]
In the conventional semiconductor manufacturing process, a semiconductor wafer is manufactured, epi-growth is performed in some cases, a pattern is formed by resist coating, exposure, and development processes, and etching and film formation are repeated. Form. At this time, a vacuum apparatus or a liquid phase apparatus is generally used as an apparatus used in the semiconductor manufacturing process other than the resist coating, exposure, and development processes.

  Since the semiconductor manufacturing equipment used in the conventional semiconductor manufacturing process is configured as described above, it is difficult to monitor the internal state, and it remains unclear how the semiconductor wafer being manufactured is processed and formed. Often manufactured. Ultra-high vacuum manufacturing equipment can be built while observing the atomic state of the surface because it can incorporate an electron beam diffractometer, etc., but low vacuum manufacturing equipment can only observe the color and shape of the inside from the viewing window, and the performance of the semiconductor After the process is complete, it will be removed and evaluated for characteristics. In the wet process, optical observation is difficult, and the change in electrical resistance can be evaluated by inserting an electrode.

  Thus, the conventional semiconductor manufacturing apparatus has a problem that it is difficult to manufacture a high-quality semiconductor because the semiconductor cannot be directly evaluated during manufacturing. That is, since no photoreflectance monitoring equipment is installed, it is difficult to grasp the situation during film formation, and it is difficult to manufacture a high-quality semiconductor. In this respect, in the present embodiment, since the properties of the semiconductor can be monitored during the formation of the semiconductor, the information can be fed back to the formation conditions in real time to manufacture a high-quality semiconductor.

[Modification of Embodiment 1]
Although the irradiation location of the probe light of the first embodiment is fixed, the in-plane distribution of the entire surface of the semiconductor wafer may be measured by scanning the probe light or scanning the wafer. In other words, the semiconductor in-plane distribution may be evaluated by the photoreflectance method by changing the relative positional relationship between the semiconductor and the probe light so as to scan the semiconductor surface. Usually, the geometry of the light source, photodetector, and semiconductor substrate is fixed, but the light source is operated like an electron beam of a cathode ray tube of a television to observe the semiconductor substrate evenly. In this case, it is preferable to provide a plurality of detectors or to provide a reflector for successfully introducing the reflected light into the detector. The semiconductor is moved on the XY axis by fixing the light source and the detector and moving the stage (lower electrode). Then, the semiconductor can be evaluated evenly.

  Instead of using the pump light of the first embodiment, in the case of a plasma apparatus, a high frequency to be applied may be applied in a pulse shape, and a simplified apparatus that does not use a pump light source may be configured. Further, in an apparatus other than the plasma apparatus, an electron beam or an ion beam can be used instead of the pump light. Also in this case, the beam is applied in a pulse shape.

In wet processes, sound waves may be used instead of excitation light. The pump light is used to increase the detection sensitivity, and the frequency only needs to be determined. Even if it is not light, a photoreflectance signal can be obtained by periodically stimulating the semiconductor.
The liquid temperature and the semiconductor surface temperature may be measured from the vibration period of the photoreflectance spectrum. As the temperature rises, the semiconductor band gap shrinks. This is because the energy at which photoreflectance appears is low (the wavelength is long).

  In the first embodiment, the wavelength of the probe light is scanned to observe the vibration waveform. However, scanning the wavelength requires a certain amount of time. Therefore, in the mass production process, the probe wavelength may be fixed and only the fluctuation intensity of the light reflection may be monitored, whereby a uniform semiconductor can be manufactured. Since the wavelength is fixed, it can be quickly fed back to the manufacturing process, and an expensive spectrometer can be omitted.

In the first embodiment, the wavelength of the probe light is scanned, but a probe light source having a plurality of wavelengths may be installed to obtain a photoreflectance spectrum at a time. As a result, the photoreflectance spectrum can be measured instantaneously and collectively. A probe light source having a plurality of wavelengths may be realized by installing a plurality of light sources.
It is also possible to irradiate rainbow-colored light, capture light of all wavelengths within the range simultaneously observed by a plurality of CCD light receivers formed in a strip shape, and acquire the spectrum instantaneously. Note that the number of probe light sources can be reduced by selecting a wavelength exhibiting a characteristic vibration intensity rather than using monochromatic probe light having a plurality of wavelengths.
When the evaluation target is various semiconductors, it is necessary to make a judgment by viewing the entire spectrum by manipulating the wavelength. In the case of mass production, the spectrum obtained is fixed, so if you focus only on the most sensitive place, you can judge whether it is manufactured normally. Usually, if the signal at that wavelength decreases, the crystallinity is decreased, and this is fordbacked to the manufacturing method.

  Although the incident angle of the probe light is fixed in the first embodiment, information on the depth direction of the semiconductor may be obtained by installing a probe light having a structure that changes the angle or a different angle. Note that the angle of the probe light may be changed, and the wavelength of the probe light may be changed. Since semiconductors are usually epitaxially grown or ion-implanted in units of several microns, information on whether the epitaxial film thickness is accurate is required. The depth direction means to evaluate the situation over several microns from the surface.

  The semiconductor wafers described so far were supposed to irradiate light to the exposed region of the semiconductor, but even with a wafer with an insulating film formed, the irradiation light uses light smaller than the band gap of the insulating film. Thus, the semiconductor surface can be evaluated. Even if an insulating film is formed on a semiconductor by heating or plasma irradiation, it is important to monitor the semiconductor surface in the manufacturing process because the semiconductor surface changes due to the influence of the process.

For “light below the band gap of the insulating film” and “photoreflectance light whose energy is smaller than the band gap of the semiconductor layer on the surface”, the specific description of such light (parameters such as wavelength or frequency) is insulated. It is as follows when it describes for every film | membrane and the semiconductor layer of the surface. This relationship is established between Si ₃ N ₄ (band gap: 5.1 eV) and a GaAs substrate (1.42 eV). In addition, this relationship also holds true for SiO ₂ (band gap: 8.9 eV) and a GaAs substrate (1.42 eV). The relationship is also established between Al _0.31 GaAs (band gap: 1.85 eV) and a GaAs substrate (1.42 eV).

  Between the insulating layer or the surface semiconductor layer and the measurement-symmetric semiconductor layer on the lower layer side, the band gap of the film on the surface must be larger than that of the lower layer with respect to the light and the band gap. This is because the reverse relationship is that light is absorbed by the surface and cannot reach below.

  That is, the manufacturing flow of the first embodiment may include a step of directly evaluating the semiconductor surface of the semiconductor in which the passivation film is formed on the surface of the semiconductor using light having a band gap less than that of the passivation film. The passivation film may include one or more films selected from the group consisting of a silicon nitride film, a silicon oxide film, an alumina film, an indium tin oxide film, a magnesium oxide film, and a titanium oxide film. A semiconductor in which a first semiconductor layer having a first band gap is formed on the surface and a second semiconductor layer having a second band gap smaller than the first band gap is provided below the semiconductor layer may be handled. In this case, the second semiconductor may be evaluated using photoreflectance light having energy smaller than that of the first band gap.

  In the above embodiment, a thermal CVD apparatus provided with a photoreflectance apparatus is shown. However, a thermal CVD apparatus, MBE apparatus, MOCVD apparatus, dry etching apparatus, ECR apparatus, ICP, which are often used in semiconductor manufacturing processes. The present invention can be similarly applied to an apparatus, an MBE apparatus, a vapor deposition apparatus, a sputtering apparatus, an ion implantation apparatus, an annealing apparatus, and the like. That is, it can be similarly applied to thermal CVD, MBE, MOCVD, dry etching, ECR, ICP, MBE, vapor deposition, sputtering, ion implantation, annealing, and the like as semiconductor manufacturing processes. In addition to the dry process, it can be incorporated into wet processes such as a wet etching apparatus, a wafer cleaning apparatus, a liquid phase growth apparatus, a plating apparatus, and a polishing apparatus. This point will be described in the second and later embodiments described later.

Embodiment 2. FIG.
The second embodiment of the present invention is a manufacturing method and a manufacturing apparatus for performing ECR.

[Apparatus according to Embodiment 2]
FIG. 4 is a diagram showing an ECR sputtering apparatus according to the second embodiment of the present invention. In FIG. 4, the correspondence between the symbols and the configuration is as follows. Reference numeral 100 denotes an ECR sputtering apparatus. Reference numeral 102 denotes a plasma generation chamber. Reference numeral 102a denotes a plasma extraction opening. 103 is a reaction chamber. Reference numeral 104 denotes a microwave introduction hole. Reference numeral 105 denotes a magnetic field coil. 106 is an exhaust port. Reference numeral 107 denotes a gas inlet. Reference numeral 108 denotes a high frequency power source. Reference numeral 109 denotes a transmitter and an EH tuner. Reference numeral 110 denotes a waveguide. 111 is a board | substrate support part. Reference numeral 112 denotes a semiconductor substrate. Reference numeral 113 denotes a target electrode. A bias power source DC is provided. Reference numeral 115 denotes a high frequency power source. 120 is a shield. B1 and B2 are valves, L1 and L2 are gas lines, and M1 and M2 are mass flow controllers.

  As in the first embodiment, a probe light generation device 10, a photodetector 12, and a pump light generation device 13 are provided as a configuration for performing the PR method.

  The control unit 140 is connected to the high-frequency power source 108, the valves B1 and B2, the bias power source DC, and the high-frequency power source 115, respectively. Further, similarly to the first embodiment, the probe light generator 10, the photodetector 12, and the pump light generator 13 are also connected.

[Manufacturing Method According to Second Embodiment]
Next, a semiconductor manufacturing process will be described. FIG. 5 is a manufacturing flow showing a method for manufacturing a semiconductor product according to the second embodiment of the present invention.

  First, the semiconductor substrate 112 is placed on the substrate support part 111, and a wafer is set (step S151).

  Next, gas introduction is performed (step S152). Here, the gas is introduced by controlling the valves B1 and B2.

  Next, ECR power is applied (step S153). Thereby, film formation is performed (step S154).

  Next, photoreflectance evaluation by the photoreflectance method (PR method) is performed (step S155), and the manufacturing conditions are adjusted based on the evaluation result (step S156). A detailed description of this part will be given later.

  If the film formation is completed, the current manufacturing process ends. If the film formation is not completed, the process loops to step S152 (step S157).

[Use of photoreflectance method]
(1) Use of PR method The state of a semiconductor to be evaluated by the PR method in this embodiment is as follows. First, the ECR apparatus has a case where a thin film is formed and a case where etching is performed. When growing a thin film, the crystallinity is evaluated as in the case of thermal CVD. The crystallinity here includes crystal defects, impurities, strains, and in the case of multi-component materials, the composition ratio, mobility, surface roughness, temperature during growth, and the like. When etching is performed, etching damage is evaluated. Etching damage includes the depth of damage, the type of damage, and the remaining thickness of the thin film.
The physical quantity monitored by the PR method is the same as in the case of thermal CVD in the first embodiment.

(2) Evaluation means of the present embodiment The evaluation method using the PR signal in the present embodiment is the same as in the case of thermal CVD in the first embodiment.

(3) Feedback means of the present embodiment In the present embodiment, as to how the evaluation result by the PR method is fed back to which manufacturing condition, the controller performs the following operation.
When film growth is performed by ECR, if it is recognized that the crystallinity has decreased, the control unit 140 performs at least one of control for suppressing high-frequency power of the ECR, control for raising the substrate temperature, and control for lowering the deposition gas concentration. One control is implemented.
When it is recognized by ECR that the crystallinity has deteriorated during etching, the control unit 140 controls the reduction of the high frequency power, the control of increasing the internal gas pressure to suppress the etching damage, and the control of raising the substrate temperature. At least one control is performed.

(4) Effects of this embodiment Since the growth conditions are adjusted, a high-quality film can be formed.
Since the etching conditions are adjusted, etching with less damage is possible.

Embodiment 3 FIG.
The third embodiment of the present invention is a manufacturing method and a manufacturing apparatus for performing ICP-Deep-RIE.

[Apparatus according to Embodiment 3]
FIG. 6 is a diagram showing an ICP-Deep-RIE apparatus 200 (hereinafter also simply referred to as apparatus 200) according to the third embodiment of the present invention. Reference symbol W denotes a semiconductor wafer. The ICP-Deep-RIE apparatus 200 includes an Sm-Co permanent magnet 202, a matching unit 204, an RF generator 206, water-cooled RF coils 208a and 208b, a heat-resistant glass cover 210, SF ₆ gas inlets 212a and 212b, A stage 214, a main valve 216, an inductor 220, a capacitor 222, a power source 224, a matching unit 226, an RF generator 228, a refrigerant path 230, and a circulating cooling system 232 are provided.

  As in the first embodiment, a probe light generation device 10, a photodetector 12, and a pump light generation device 13 are provided as a configuration for performing the PR method.

  The control unit 240 is connected to the configuration related to gas introduction and the configuration related to ICP power application in the apparatus 200 described above.

[Manufacturing Method According to Third Embodiment]
Next, a semiconductor manufacturing process will be described. FIG. 7 is a manufacturing flow showing a method for manufacturing a semiconductor product according to the third embodiment of the present invention.

  First, the semiconductor wafer W is placed on the stage 214, and a wafer is set (step S250).

Next, gas introduction is performed (step S251). Here, gas is introduced by controlling a valve (not shown) for opening and closing the SF ₆ gas inlets 212a and 212b.

  Next, ICP power is applied (step S252). Thereby, film formation is performed (step S253).

  Next, photoreflectance evaluation by the photoreflectance method (PR method) is performed (step S254), and the manufacturing conditions are adjusted based on the evaluation result (step S255). A detailed description of this part will be given later.

  If the film formation is completed, the current manufacturing process ends. If the film formation is not completed, the process loops to step S251 (step S256).

[Use of photoreflectance method]
(Specific configuration of the present embodiment)
(1) Use of PR method The state of a semiconductor to be evaluated by the PR method in this embodiment is as follows. Since the operation of the ICP device is almost the same as that of the ECR device, the use of the PR method is the same. In the ICP apparatus, a thin film may be formed or etched. In the case of growth, crystallinity (crystal defects, impurities, strain, composition ratio, mobility, surface roughness, temperature during growth, etc. in the case of multi-component materials) is evaluated as in the case of thermal CVD. When etching, the etching damage (depth of damage, type of damage, remaining thickness of thin film, etc.) is evaluated.
The physical quantity monitored by the PR method is the same as in the case of thermal CVD in the first embodiment.

(2) Evaluation means of the present embodiment The evaluation method using the PR signal in the present embodiment is the same as in the case of thermal CVD in the first embodiment.

(3) Feedback means of the present embodiment In the present embodiment, how the evaluation result by the PR method is fed back to which manufacturing condition is the same as in the case of the ECR apparatus in the second embodiment.

(4) The effect of this embodiment is the same as that of the ECR apparatus in the second embodiment.

Embodiment 4 FIG.
Embodiment 4 of the present invention is a manufacturing method and manufacturing apparatus for performing vapor deposition.

[Apparatus according to Embodiment 4]
FIG. 8 is a diagram showing a vapor deposition apparatus 300 according to Embodiment 4 of the present invention. Inside the vacuum vessel 302, a substrate holder with heater 304, a shutter 308, an evaporation source control unit 309, an evaporation source 310, and a baffle 312 are provided. The semiconductor substrate W4 is set on the substrate holder 304 with heater. The gas in the vacuum vessel 302 can be extracted by the oil rotary pump 314 and the oil diffusion pump 316.

  As in the first embodiment, a probe light generation device 10, a photodetector 12, and a pump light generation device 13 are provided as a configuration for performing the PR method.

  The control unit 340 is connected to the evaporation source control unit 309, the oil rotary pump 314, and the oil diffusion pump 316, and is also connected to the probe light generation device 10, the light detector 12, and the pump light generation device 13.

[Manufacturing Method According to Fourth Embodiment]
Next, a semiconductor manufacturing process will be described. FIG. 9 is a manufacturing flow showing a method for manufacturing a semiconductor product according to the fourth embodiment of the present invention.

  First, the semiconductor substrate W4 is set on the substrate holder with heater 304, and a wafer is set (step S350).

  Next, the operation of the vacuum pump (oil rotary pump 314, oil diffusion pump 316) is performed (step S351). As a result, the pressure in the vacuum vessel 302 is reduced to a predetermined value and maintained.

  Next, the evaporation source 310 is heated (step S352). Thereby, film formation is performed (step S353).

  Next, photoreflectance evaluation by the photoreflectance method (PR method) is performed (step S354), and the manufacturing conditions are adjusted based on the evaluation result (step S355). A detailed description of this part will be given later.

  If the film formation is completed, the current manufacturing process is terminated. If the film formation is not completed, the process loops to step S351 (step S356).

[Use of photoreflectance method]
(Specific configuration of the present embodiment)
(1) Use of PR method The state of a semiconductor to be evaluated by the PR method in this embodiment is as follows. In the vapor deposition apparatus, the density, impurities, strain, composition ratio of the thin film formed by vapor deposition, and the composition ratio, conductivity, surface roughness, temperature during growth, and the like in the case of multi-component materials are evaluated. Vapor deposition is characterized by forming a polycrystalline or amorphous film rather than crystalline.
The physical quantity monitored by the PR method is the same as in the case of thermal CVD in the first embodiment.

(2) Evaluation means of the present embodiment The evaluation method using the PR signal in the present embodiment is the same as in the case of thermal CVD in the first embodiment.

(3) Feedback means of the present embodiment In the present embodiment, as to how the evaluation result by the PR method is fed back to which manufacturing condition, the controller performs the following operation.
(I) Increase the degree of vacuum when impurities increase in the vapor deposition system.
(Ii) If the strain increases, the current of the electron beam is reduced to lower the film formation rate.
(Iii) When the composition ratio is changed, a large amount of unexpected elements is deposited by changing the ratio of application of the electron beam.
(Iv) If the conductivity decreases, increase the substrate temperature by decreasing the deposition rate.
(V) If surface roughness occurs, decrease the deposition rate, increase the substrate temperature, and increase the degree of vacuum.

(4) The effect of the present embodiment is that the deposition conditions are adjusted, so that a film having a good composition ratio and less surface roughness can be obtained.

Embodiment 5 FIG.
Embodiment 5 of the present invention is a manufacturing method and a manufacturing apparatus for performing sputtering.

[Apparatus according to Embodiment 5]
FIG. 10 is a diagram showing a sputtering apparatus 400 according to the fifth embodiment of the present invention. Inside the chamber 402, a substrate electrode 404 and a target 412 are arranged to face each other. The target 412 is connected to the high voltage power source 414. The chamber 402 is connected to a vacuum pump (not shown) via an exhaust pipe 406. A valve 408 is disposed in the gas introduction pipe 410 on the way.

  As in the first embodiment, a probe light generation device 10, a photodetector 12, and a pump light generation device 13 are provided as a configuration for performing the PR method.

  The control unit 440 is connected to the valve 408, the high-voltage power supply 414, a vacuum pump (not shown), and the like, and is also connected to the probe light generator 10, the photodetector 12, and the pump light generator 13.

[Manufacturing Method According to Embodiment 5]
Next, a semiconductor manufacturing process will be described. FIG. 11 is a manufacturing flow showing a method for manufacturing a semiconductor product according to the fifth embodiment of the present invention.

  First, a semiconductor substrate is set on the substrate electrode 402 side, and a wafer is set (step S450).

  Next, gas introduction is performed (step S451). That is, the valve 408 is controlled with the operation of a vacuum pump (not shown), and the chamber 402 is filled with a predetermined gas at a predetermined pressure.

  Next, the high voltage power source 414 is controlled to apply the high voltage power source (step S452). Thereby, film formation by sputtering is performed (step S453).

  Next, photoreflectance evaluation by the photoreflectance method (PR method) is performed (step S454), and the manufacturing conditions are adjusted based on the evaluation result (step S455). A detailed description of this part will be given later.

  If the film formation is completed, the current manufacturing process ends. If the film formation is not completed, the process loops to step S451 (step S456).

[Use of photoreflectance method]
(Specific configuration of the present embodiment)
(1) Use of PR method In this embodiment, the state of a semiconductor to be evaluated by the PR method is almost the same as that of vapor deposition. In the sputtering apparatus, the density, impurities, strain, composition ratio of a thin film formed by vapor deposition, and the composition ratio, conductivity, surface roughness, temperature during growth, and the like in the case of multi-component materials are evaluated. The sputtering apparatus is characterized by forming a polycrystalline or amorphous film rather than crystallinity.
The physical quantity monitored by the PR method is the same as in the case of thermal CVD in the first embodiment.

(2) Evaluation means of the present embodiment The evaluation method using the PR signal in the present embodiment is the same as in the case of thermal CVD in the first embodiment.

(3) Feedback means of the present embodiment In the present embodiment, how the evaluation result by the PR method is fed back to which manufacturing condition is the same as that of the vapor deposition apparatus described in the fourth embodiment.

(4) The effect of this embodiment is the same as that of the vapor deposition apparatus described in the fourth embodiment.

Embodiment 6 FIG.
Embodiment 6 of the present invention is a manufacturing method and a manufacturing apparatus for performing an ion implantation process.

[Apparatus according to Embodiment 6]
FIG. 12 is a diagram showing an ion implantation apparatus 500 according to the sixth embodiment of the present invention. A 60 kV high-voltage power supply 502, a gas system source power supply 504, a diffusion pump 506, an ion source 508, an analyzer magnet 512, a 100 keV power supply 514, and a stage 516 are provided. 510 is an ion beam. A semiconductor substrate W6 is disposed on the stage 516. The high-voltage power source 502, the gas system source power source 504, and the ion source 508 are mainly configured to adjust the ion amount. The analyzer magnet 514 and the 100 keV power source 514 are mainly configured for ion implantation.

  As in the first embodiment, a probe light generation device 10, a photodetector 12, and a pump light generation device 13 are provided as a configuration for performing the PR method.

  The control unit 540 is connected to the configuration related to the adjustment of the ion amount and the configuration related to the ion implantation, and is also connected to the probe light generation device 10, the photodetector 12, and the pump light generation device 13.

[Manufacturing Method According to Sixth Embodiment]
Next, a semiconductor manufacturing process will be described. FIG. 13 is a manufacturing flow showing a method for manufacturing a semiconductor product according to the sixth embodiment of the present invention.

  First, the semiconductor substrate W6 is set on the stage 516, and a wafer is set (step S550).

  Next, the control unit 540 controls the configuration related to the above-described ion generation, and the ion generation is performed (step S551).

  Next, the control unit 540 controls the configuration related to the above ion implantation, and the ion implantation is performed (step S552).

  Next, photoreflectance evaluation by the photoreflectance method (PR method) is performed on the semiconductor substrate W6 (step S553), and manufacturing conditions are adjusted based on the evaluation result (step S554). A detailed description of this part will be given later.

  If the film formation is completed, the current manufacturing process ends. If the film formation is not completed, the process loops to step S551 (step S555).

[Use of photoreflectance method]
(Specific configuration of the present embodiment)
(1) Use of PR method As the state of a semiconductor to be evaluated by the PR method in this embodiment, the ion implantation apparatus evaluates the crystallinity of an implanted crystal. This crystallinity includes crystal defects, implanted impurities, strain, composition ratio in the case of multi-component materials, mobility, surface roughness, temperature during growth, and the like.
The physical quantity monitored by the PR method is the same as in the case of thermal CVD in the first embodiment.

(2) Evaluation means of the present embodiment The evaluation method using the PR signal in the present embodiment is the same as in the case of thermal CVD in the first embodiment.

(3) Feedback means of this embodiment In this embodiment, as to how the evaluation result by the PR method is fed back to which manufacturing condition, the degree of vacuum is improved when impurities are increased by ion implantation. Others are the same as vapor deposition.

(4) The effect of this embodiment is that the degree of vacuum is adjusted, so that ion implantation of high-quality crystals with few impurities is possible.

Embodiment 7 FIG.
Embodiment 7 of the present invention is a manufacturing method and a manufacturing apparatus for performing a wafer cleaning process.

[Apparatus according to Embodiment 7]
FIG. 14 shows a wafer cleaning apparatus 600 according to the seventh embodiment of the present invention. This apparatus cleans the wafer W. Reference numeral 621 denotes a cleaning tank. 621a is an outer wall. 623 is a washing tank bottom. 625 is a drainage port. Reference numeral 629 denotes a drainage guide unit. Reference numeral 631 denotes an upper surface. Reference numeral 633 denotes a central drain port. Reference numeral 635 denotes an outer drainage port. 637 and 643 are circulation pipes. Reference numeral 639 denotes a circulation pump that plays a role of adjusting the stirring speed of the cleaning liquid by controlling the number of rotations thereof. Reference numeral 641 denotes a filter. 645 is an outer tub. Reference numeral 647 denotes an outer peripheral wall. Reference numeral 653 denotes a mixed cleaning liquid. A heater 634 serves to adjust the temperature of the cleaning liquid. The cleaning liquid circulates as shown by the arrows in the figure.

  As in the first embodiment, a probe light generation device 10, a photodetector 12, and a pump light generation device 13 are provided as a configuration for performing the PR method.

  The controller 640 is connected to the heater 634 and the circulation pump 639, and is also connected to the probe light generator 10, the photodetector 12, and the pump light generator 13.

[Manufacturing Method According to Embodiment 7]
Next, a semiconductor manufacturing process will be described. FIG. 15 is a manufacturing flow showing a method of manufacturing a semiconductor product according to the seventh embodiment of the present invention.

  First, the semiconductor wafer W is set in the cleaning tank 621, and the wafer is set (step S650).

  Next, by controlling the heater 634 and the circulation pump 639, cleaning is performed at a predetermined temperature and stirring speed (step S651).

  Next, photoreflectance evaluation by the photoreflectance method (PR method) is performed on the semiconductor wafer W (step S652), and manufacturing conditions are adjusted based on the evaluation result (step S653). A detailed description of this part will be given later.

  If the cleaning is completed, the current cleaning process ends. If the cleaning process is not completed, the process loops to step S651 (step S654).

[Use of photoreflectance method]
(Specific configuration of the present embodiment)
(1) Use of PR Method As a semiconductor state to be evaluated by the PR method in this embodiment, the wafer cleaning apparatus evaluates residual impurities, etching amount, and surface roughness on the surface.
The physical quantity monitored by the PR method is the same as in the case of thermal CVD in the first embodiment.

(2) Evaluation means of the present embodiment The evaluation method using the PR signal in the present embodiment is the same as in the case of thermal CVD in the first embodiment.

(3) Feedback Means of the Present Embodiment In the present embodiment, how to feed back the evaluation result by the PR method to which manufacturing condition is as follows. When there are residual impurities, the PR spectrum intensity decreases. Therefore, when a decrease in the intensity of the PR spectrum is recognized, the control unit 640 controls the heater 634 and the circulation pump 639 so as to increase the amount of washing water and the water ejection intensity.

(4) As an effect of the present embodiment, since the cleaning water amount and strength are adjusted, good wafer cleaning can be performed.

Embodiment 8 FIG.
Embodiment 8 of the present invention is a manufacturing method and manufacturing apparatus for performing liquid phase growth.

[Apparatus according to Embodiment 8]
FIG. 16 is a diagram showing a liquid phase growth apparatus 700 according to the eighth embodiment of the present invention. The liquid phase growth apparatus 700 includes a case 702, heaters 704a, 704b, 706a, and 706b, a source container 708 in which a source crystal 716 is poured, a pipe 710, and P or Te as an impurity therein. A removed impurity container 712, a valve 711, a sub-heater 714, and a carbon port 718 are provided. Liquid phase growth of a thin film is performed on the semiconductor substrate W8 by the source crystal 716.

  The pipe 710 is connected to the source crystal supply unit 720. The source crystal supply unit 720 can supply GaAs in the present embodiment as a source crystal. In particular, in the present embodiment, a Ga supply unit and an As supply unit are individually provided in the source crystal supply unit 720, and by making each supply amount variable, GaAs supplied as a source crystal can be supplied. The concentration ratio is adjustable. It is assumed that the concentration ratio of GaAs can be adjusted to a desired concentration ratio by connecting to the control unit 740.

  As in the first embodiment, a probe light generation device 10, a photodetector 12, and a pump light generation device 13 are provided as a configuration for performing the PR method.

  The control unit 740 is connected to the heaters 704a, 704b, 706a, and 706b, the valve 711, the sub-heater 714, and the source crystal supply unit 720, and includes the probe light generator 10, the photodetector 12, and pump light generation. The device 13 is also connected.

[Manufacturing Method According to Eighth Embodiment]
Next, a semiconductor manufacturing process will be described. FIG. 17 is a manufacturing flow showing the method of manufacturing a semiconductor product according to the eighth embodiment of the present invention.

  First, the semiconductor substrate W8 is set, and a wafer is set (step S750).

  Next, the growth liquid is introduced by controlling the valve 711 or the like. (Step S751). Note that the control of the control unit 740 adjusts the supply amount of the source crystal, adjusts the concentration ratio of GaAs, and adjusts the impurity addition amount from the impurity container 712.

  Next, the controller 740 controls the heaters 704a, 704b, 706a, 706b and the sub heater 714 to perform heating (step S752). Thereby, film formation by liquid phase growth is performed (Step S753).

  Next, photoreflectance evaluation by the photoreflectance method (PR method) is performed on the semiconductor substrate W8 (step S754), and manufacturing conditions are adjusted based on the evaluation result (step S755). A detailed description of this part will be given later.

  If the cleaning is completed, the current cleaning process ends. If the cleaning is not completed, the process loops to step S751 (step S756).

[Use of photoreflectance method]
(Specific configuration of the present embodiment)
(1) Use of PR method As a state of a semiconductor to be evaluated by the PR method in this embodiment, a liquid phase growth apparatus evaluates the crystallinity of a growing thin film. This crystallinity includes crystal defects, impurities, strain, composition ratio, mobility, surface roughness, temperature during growth, etc. in the case of multi-component materials.
The physical quantity monitored by the PR method is the same as in the case of thermal CVD in the first embodiment.

(2) Evaluation means of the present embodiment The evaluation method using the PR signal in the present embodiment is the same as in the case of thermal CVD in the first embodiment.

(3) Feedback Means of the Present Embodiment In the present embodiment, how to feed back the evaluation result by the PR method to which manufacturing condition is as follows. When it is recognized that the crystallinity has decreased, the control unit 740 performs at least one of the control for increasing the liquid temperature and the control for decreasing the liquid flow rate.

(4) As an effect of the present embodiment, since the above conditions are adjusted, a good crystal can be obtained.

Embodiment 9 FIG.
Embodiment 9 of the present invention is a manufacturing method and a manufacturing apparatus for performing a plating step.

[Apparatus according to Embodiment 9]
FIG. 18 is a diagram showing a plating apparatus 800 according to the ninth embodiment of the present invention. The plating apparatus 800 is an apparatus that performs electrolytic plating. Reference numeral 801 denotes a plating tank. Reference numeral 802 denotes a semiconductor wafer. Reference numeral 803 denotes a wafer support. Reference numeral 804 denotes a seal packing (electrically connected to the cathode electrode). Reference numeral 805 denotes an annular support. Reference numeral 806 denotes a top ring. Reference numeral 807 denotes a wafer retainer. Reference numeral 808 denotes a plating solution outlet. Reference numeral 809 denotes an insoluble anode electrode. Reference numeral 810 denotes a plating solution discharge path. 811 is a plating solution supply pipe. Reference numeral 812 denotes a plating solution injection nozzle base pipe. 813 is a plating solution spray nozzle. A plating solution supply unit 830 includes a supply source of the plating solution and a pump for controlling the outflow amount thereof. Reference numeral 832 denotes an electric field control unit for generating and adjusting an applied electric field for electrolytic plating.

  As in the first embodiment, a probe light generation device 10, a photodetector 12, and a pump light generation device 13 are provided as a configuration for performing the PR method.

  The control unit 840 is connected to the plating solution supply unit 830 and the electric field control unit 832, and is also connected to the probe light generation device 10, the photodetector 12, and the pump light generation device 13.

[Manufacturing Method According to Embodiment 9]
Next, a semiconductor manufacturing process will be described. FIG. 19 is a manufacturing flow showing the method of manufacturing a semiconductor product according to the ninth embodiment of the present invention.

  First, the semiconductor wafer 802 is set, and the wafer is set (step S851).

  Next, the control unit 840 controls the plating solution supply unit 830 so that the plating solution is introduced. (Step S852).

  Next, the control unit 840 controls the electric field control unit 832 to perform electrolysis (step S853). Thus, plating film formation is performed on the surface of the semiconductor wafer 802 (step S854).

  Next, photoreflectance evaluation by the photoreflectance method (PR method) is performed on the semiconductor wafer 802 (step S855), and manufacturing conditions are adjusted based on the evaluation result (step S856). A detailed description of this part will be given later.

  If the plating is completed, the current plating process is terminated. If the plating is not completed, the process loops to step S852 (step S857).

[Use of photoreflectance method]
(Specific configuration of the present embodiment)
(1) Use of PR method In the present embodiment, as a state of a semiconductor to be evaluated by the PR method, a liquid phase growth apparatus mainly grows metal, but the crystallinity of the growing thin film is evaluated. The crystallinity includes crystal defects, impurities, strain, composition ratio in the case of multi-component materials, mobility, surface roughness, temperature during growth, and the like.
The physical quantity monitored by the PR method is the same as in the case of thermal CVD in the first embodiment.

(2) Evaluation means of the present embodiment The evaluation method using the PR signal in the present embodiment is the same as in the case of thermal CVD in the first embodiment.

(3) Feedback means of this embodiment In this embodiment, how to feed back the evaluation results by the PR method to which manufacturing conditions is the same as in the case of the liquid phase growth apparatus in the eighth embodiment.

(4) The effect of the present embodiment is the same as that of the liquid phase growth apparatus in the eighth embodiment.

  As a modification of the tenth embodiment, the above-described manufacturing method and control may be performed by attaching a configuration related to the PR method to an electroless plating apparatus.

Embodiment 10 FIG.
Embodiment 10 of the present invention is a manufacturing method and a manufacturing apparatus for performing a polishing process.

[Apparatus according to Embodiment 10]
FIG. 20 is a diagram showing a CMP polishing apparatus 900 according to the tenth embodiment of the present invention. Reference numeral 912 denotes a platen. 914 is a polishing pad. Reference numeral 916 denotes a wafer holder. Reference numeral 918 denotes a slurry supply nozzle. Reference numeral 920 denotes a semiconductor wafer.

  As in the first embodiment, a probe light generation device 10, a photodetector 12, and a pump light generation device 13 are provided as a configuration for performing the PR method. In the present embodiment, wafer holder 916 and semiconductor wafer 920 are wide gap semiconductors and are transparent to probe light and pump light. As a result, the PR method can be implemented also by the positional relationship of FIG.

  The control unit 940 is connected to a motor that controls the rotation of the platen 912, a rotation control motor and a position control mechanism for the wafer holder 916, and a slurry supply nozzle 918, as well as the probe light generator 10, the photodetector 12, The pump light generator 13 is also connected.

[Manufacturing Method According to Tenth Embodiment]
Next, a semiconductor manufacturing process will be described. FIG. 21 is a manufacturing flow showing the method of manufacturing a semiconductor product according to the tenth embodiment of the present invention.

  First, the semiconductor wafer 920 is set on the wafer holder 916, and the wafer is set (step S950).

  Next, under the control of the control unit 940, rotation of the wafer holder 916 and the platen 912, etc., and slurry supply through the slurry supply nozzle 918 are performed, and polishing is performed (step S951).

  Next, photoreflectance evaluation by the photoreflectance method (PR method) is performed on the semiconductor wafer 920 (step S952), and manufacturing conditions are adjusted based on the evaluation result (step S954). A detailed description of this part will be given later.

  If the polishing is completed, the current polishing process ends. If the polishing is not completed, the process loops to step S951 (step S954).

[Use of photoreflectance method]
(Specific configuration of the present embodiment)
(1) Use of PR Method In this embodiment, as a state of a semiconductor to be evaluated by the PR method, a polishing apparatus evaluates a rough surface, mechanically generated crystal defects, a chemical reaction by a polishing liquid, and the like.
The physical quantity monitored by the PR method is the same as in the case of thermal CVD in the first embodiment.

(2) Evaluation means of the present embodiment The evaluation method using the PR signal in the present embodiment is the same as in the case of thermal CVD in the first embodiment.

(3) Feedback Means of the Present Embodiment In the present embodiment, how to feed back the evaluation result by the PR method to which manufacturing condition is as follows. When it is recognized that surface roughness has occurred, the control unit 940 executes at least one of control for decreasing the rotation speed of polishing and control for increasing and decreasing the amount of the grindstone.

(4) As an effect of this embodiment, since the polishing speed and the amount of the grindstone are adjusted, a flat surface with little damage is obtained.

Embodiment 11 FIG.
Embodiment 11 of the present invention is a manufacturing method and a manufacturing apparatus for performing a plating process. It is characterized in that the semiconductor is stimulated using sound waves instead of pump light.

  FIG. 22 is a diagram showing a plating apparatus 1000 according to the eleventh embodiment of the present invention. Except for having a sound wave generation source 1013, it has the same configuration as the plating apparatus 800 according to the ninth embodiment. The control unit 840 is connected to the sound wave generation source 1013.

  Next, a semiconductor manufacturing process will be described. The manufacturing flow and the method of using the photoreflectance method are the same as the manufacturing flow of the ninth embodiment shown in FIG. However, it differs from Embodiment 9 in that the semiconductor is stimulated with a sound wave from the sound wave generation source 1013 instead of the pump light.

Embodiment 12 FIG.
Embodiment 12 of the present invention is a manufacturing method and a manufacturing apparatus for performing a wafer cleaning process. It is characterized in that the semiconductor is stimulated using sound waves instead of pump light.

  FIG. 23 is a diagram showing a wafer cleaning apparatus 1100 according to the twelfth embodiment of the present invention. Except for having a sound wave generation source 1113, it has the same configuration as the wafer cleaning apparatus 600 according to the seventh embodiment. The control unit 640 is connected to the sound wave generation source 1113.

  Next, a semiconductor manufacturing process will be described. The manufacturing flow and the method of using the photoreflectance method are the same as the manufacturing flow of the seventh embodiment shown in FIG. However, it differs from the seventh embodiment in that the semiconductor is stimulated with sound waves from the sound wave generation source 1113 instead of the pump light.

Embodiment 13 FIG.
Embodiment 13 of the present invention is a manufacturing method for monitoring a quantum well and a heterojunction for generating a two-dimensional electron gas by a photoreflectance method.

  FIG. 24 is a diagram for explaining the method for manufacturing a semiconductor product according to the thirteenth embodiment of the present invention, and shows a band diagram of an AlGaN / GaN HEMT. Two-dimensional electron gas (2DEG) is generated at the AlGaN / GaN interface by spontaneous polarization and the piezoelectric effect. This two-dimensional electron gas should be large, and may decrease due to interface roughening under growth conditions. A good semiconductor is manufactured by performing feedback so as to reduce the roughness as much as possible during growth such as liquid phase growth.

  Although the apparatus according to the thirteenth embodiment is not shown, the well-known configuration of MBE (line-of-sight epitaxy), MOCVD apparatus, and liquid phase growth apparatus is applied to the surface of a semiconductor wafer or semiconductor substrate as in the first embodiment. What is necessary is just to provide the probe light generator 10, the photodetector 12, and the pump light generator 13 as a structure for implementing PR method.

  The manufacturing process of the present embodiment includes a process of growing a heterojunction that generates a two-dimensional electron gas. The evaluation process using the PR method is performed by monitoring the heterojunction using the photoreflectance method. The manufacturing condition correction includes a step of growing the heterojunction while correcting the manufacturing process conditions based on the evaluation result by the PR method.

  Regarding the physical quantity monitored by the PR method, how to use the PR signal for the evaluation, the feedback means, and the effect, first, in the case of MBE, it may be the same as the case of the vapor deposition apparatus of the fourth embodiment. . Further, in the case of MOCVD, the temperature at the time of growth, the degree of vacuum, the growth rate, and the gas concentration ratio may be controlled similarly to the case of the thermal DVD apparatus of the first embodiment. Further, the liquid phase growth may be the same as in the liquid phase growth apparatus of the eighth embodiment.

Embodiment 14 FIG.
Embodiment 14 of the present invention is a manufacturing method and manufacturing apparatus using photoreflectance, Raman scattering, and photoluminescence as evaluation means.

[Apparatus according to Embodiment 14]
FIG. 25 is a diagram showing a thermal CVD apparatus 1200 according to the fourteenth embodiment of the present invention. The basic configuration is the same as that of the thermal CVD apparatus 1 in FIG. 1 except that a detector 1015 is provided. The detector 1015 is a detector of Raman scattered light. A photoluminescence detector may be used in place of the Raman scattered light detector. When the pump light 14 is irradiated onto the semiconductor wafer W, light having a wavelength different from the wavelength of the pump light is emitted. This light can be detected, and Raman scattering spectroscopy and photoluminescence can be measured. At this time, in this embodiment, three types of evaluation can be performed using one pump light. In the prior art, when performing various measurements, a pump light source corresponding to each measurement is required. However, in this embodiment, the number of pump light sources can be reduced.

DESCRIPTION OF SYMBOLS 1 Thermal CVD apparatus 2 Lower electrode 3 Upper electrode 4 Heating gas 5 Heater power supply 6 Heater power supply 7 Chamber 8 Gas introduction system 8a Valve 9 Vacuum exhaust system 9 Form 10 Probe light generator 11 Probe light 11 Probe light 11 Probe light 12 Photodetector 13 Pump light generator 14 Pump light 20 Control unit

Claims (18)

A manufacturing process for manufacturing semiconductor products;
During the manufacturing process, a Franz-Keldish vibration waveform is obtained by a photoreflectance method for a semiconductor surface or a laminated film on the semiconductor surface, and a surface recombination velocity, electric field strength is obtained based on the Franz-Keldish vibration waveform. A PR process for obtaining at least one value of Fermi level and dangling bond density;
During the manufacturing process, a manufacturing condition correction process for correcting the conditions of the manufacturing process based on the numerical value;
A method for manufacturing a semiconductor product, comprising: The manufacturing process includes
One or more processes selected from the group consisting of thermal CVD process, ECR process, ICP process, vapor deposition process, MBE process, sputtering process, ion implantation process, wafer cleaning process, liquid phase growth process, plating process, and polishing process. The method of manufacturing a semiconductor product according to claim 1, wherein:   The PR step includes a step of irradiating a semiconductor surface with probe light, receiving reflected light of the probe light, and applying a stimulus for excitation to the semiconductor surface, and scanning the semiconductor surface with the semiconductor 3. The method of manufacturing a semiconductor product according to claim 1, wherein the in-plane distribution of the semiconductor is evaluated by a photoreflectance method by changing a relative positional relationship with the probe light. The manufacturing process includes performing at least one of plasma, electron beam, and ion irradiation,
4. The method according to claim 1, wherein at least one of the plasma, the electron beam, and the ion irradiation is used as a pulsed state for stimulating the semiconductor as an excitation source of a photoreflectance method. 5. The manufacturing method of the semiconductor product of description. The manufacturing process includes a wet process,
2. The method of manufacturing a semiconductor product according to claim 1, wherein in the PR step, evaluation by a photoreflectance method is performed on a semiconductor in a liquid phase in the wet process.   6. The semiconductor product according to claim 1, wherein in the PR step, the semiconductor is excited by a photoreflectance method by applying a sound wave to the semiconductor as an excitation source. Production method.   The method of manufacturing a semiconductor product according to claim 1, wherein the wavelength of the probe light of the photoreflectance method is fixed during the PR process.   8. The method of manufacturing a semiconductor product according to claim 1, wherein the PR step is to irradiate probe lights having a plurality of wavelengths and acquire a photoreflectance spectrum at a time. .   9. The method of manufacturing a semiconductor product according to claim 1, wherein the liquid temperature and the surface temperature of the semiconductor are measured from the vibration period of the photoreflectance spectrum. The manufacturing process includes a step of growing a heterojunction that generates a two-dimensional electron gas,
The PR step is evaluated by monitoring the heterojunction by a photoreflectance method,
The said manufacturing condition correction process includes the process of growing the said heterojunction, correcting the conditions of the said manufacturing process based on the evaluation result by the said PR process. A method for producing a semiconductor product as described in 1.   The method of manufacturing a semiconductor product according to claim 1, wherein the PR step includes a step of evaluating a structure in a depth direction of the semiconductor by changing a wavelength of pump light. .   12. The method of manufacturing a semiconductor product according to claim 11, wherein in the PR step, the structure in the depth direction of the semiconductor is evaluated by changing incident angles of the pump light and the probe light.   2. The PR step includes a step of directly evaluating a semiconductor surface of a semiconductor having a passivation film formed on the surface of the semiconductor using light having a band gap less than that of the passivation film. 13. A method for producing a semiconductor product as set forth in any one of 12 above.   14. The passivation film includes at least one film selected from the group consisting of a silicon nitride film, a silicon oxide film, an alumina film, an indium tin oxide film, a magnesium oxide film, and a titanium oxide film. A method for producing a semiconductor product as described in 1. above. In the manufacturing process, a first semiconductor layer having a first band gap is formed on a surface, and a second semiconductor layer having a second band gap smaller than the first band gap is provided below the semiconductor layer. Is the one that handles
15. The semiconductor according to claim 1, wherein in the PR step, the second semiconductor is evaluated using photoreflectance light whose energy is smaller than that of the first band gap. Product manufacturing method.   16. The semiconductor product according to claim 1, wherein at least one of photoluminescence evaluation and Raman scattering evaluation is performed using light used for a photoreflectance method in the PR step. Production method. Manufacturing means for manufacturing semiconductor products;
During the manufacturing process of the manufacturing means, a Franz-Keldish vibration waveform is obtained by a photoreflectance method for a semiconductor surface or a laminated film of the semiconductor surface, and surface recombination is performed based on the Franz-Keldish vibration waveform PR means for obtaining at least one value of velocity, electric field strength, Fermi level and dangling bond density;
During the manufacturing process, manufacturing condition correction means for correcting the conditions of the manufacturing process based on the numerical value;
A semiconductor manufacturing apparatus comprising: The manufacturing means includes
It is a means for performing one or more processes selected from the group consisting of thermal CVD, ECR, ICP, vapor deposition, MBE, sputtering, ion implantation, wafer cleaning, liquid phase growth, plating, and polishing. A method for manufacturing a semiconductor product according to claim 17.

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