JP2013239329A - Electron beam application device and electron beam adjustment method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electron beam application device in which the profile, or the like, of an electron beam in the opposite direction can be adjusted without affecting the electron beam in one direction.SOLUTION: The electron beam application device includes an EXB deflector 101 having 8 or more poles of electric field deflector and magnetic field deflector, respectively, first ratio and strength adjustment means 110, and second ratio and strength adjustment means 111. The first ratio and strength adjustment means 110 adjusts the ratio and strength of a dipole electric field and a dipole magnetic field generated by the EXB deflector 101, and the second ratio and strength adjustment means 111 adjusts the ratio and strength of a quadrupole electric field and a quadrupole magnetic field generated by the EXB deflector 101.

Description

  The present invention relates to an electron beam application apparatus and an electron beam adjustment method.

  For example, Patent Document 1 discloses a method that uses a Wien filter having a 12-pole structure to reduce nonuniform high-order components of an electric field and a magnetic field and to reduce aberrations. Patent Document 2 discloses a method for adjusting a quadrupole magnetic field and a quadrupole electric field in an electron microscope system including a quadrupole lens having a quadrupole electric field source member and a quadrupole magnetic field source member. ing.

Japanese Patent No. 4242101 JP 2004-134389 A

  Electron beam application apparatuses that perform observation, inspection, and processing of fine samples include an electron microscope, an electron beam inspection and measurement apparatus, and an electron beam drawing apparatus. These devices have means to detect the electron beam and detect, inspect, and process the sample by detecting the electrons that pass through the sample, secondary electrons generated from the sample, Auger electrons, backscattered electrons, etc. ing. Furthermore, in order to perform high-precision observation, inspection, and processing, the shape, position, and current of the electron beam itself are calibrated by detecting primary electrons and backscattered electrons.

  In particular, in the observation, inspection, and processing of semiconductor devices, etc., the resolution and measurement accuracy of the electron beam is improved to cope with the miniaturization and diversification that progresses year by year, and high throughput and long-term stability are maintained to maintain productivity. It is necessary to realize sex. In order to achieve high throughput, it is necessary to acquire images at a wide range (large field of view) and at high speed. However, when an image is acquired at high speed, the number of detected electrons per pixel decreases, and the S / N deteriorates accordingly. Therefore, it becomes necessary to increase the number of additions of the image, which ultimately limits the throughput.

  In the observation method using the electrons generated from the sample, the direct detection method that directs the electrons from the sample directly to the electron beam detector, and the reflection detection that irradiates the electrons from the sample to the reflector and acquires the electrons generated from it. There is a method. In either method, using an electromagnetic superimposing deflector (hereinafter referred to as an EXB deflector), only electrons from the sample are separated from the optical axis of the primary electron beam and guided to a detector or reflector. Yes. The EXB deflector uses a Wien filter that applies a deflecting action of an electric field and a magnetic field to electrons from one direction. Since the deflection action of the magnetic field is determined by the velocity direction of the electrons, the deflection direction is reversed for electrons from the opposite direction. For this reason, when electrons from the reverse direction enter the Wien filter, the action of the electric field and the magnetic field are in the same direction, and a large deflection action occurs.

  With the reflection detection method, it is easy to detect a large field of view, but there is a concern about the deterioration of S / N due to statistical variations of electrons generated from the reflection plate. On the other hand, the direct detection method is more advantageous in terms of S / N than the reflection detection method, but since the field of view is determined by the shape of the electron beam detector, the realization of large-field detection for high throughput becomes a problem. The spread of electrons from the sample on the detector is determined by the magnification and aberration of the downstream lens, the position change by the deflector, the aberration by the EXB deflector, and the like.

  In response to the problem of this direct detection method, the beam from the sample is separated from the optical axis by the EXB deflector, and then the electron beam is distributed using an optical element such as an astigmatism corrector that acts only on the electrons from the sample. Can be adjusted and led to a detector. However, especially in the scanning electron microscope SEM, there are large spatial restrictions between the detector and the electromagnetic superimposing deflector, and it is difficult to dispose the optical element. In the projection-type electron beam application apparatus, the primary electron beam or the secondary electron beam is largely deflected by the EXB deflector so that the optical element can be separated from the position where the optical element can be arranged. However, when a large deflection action is applied by the EXB deflector, the aberration (astigmatism, chromatic aberration, deflection distortion, etc.) of the deflected electron beam is increased. In any case, it is difficult to direct all electrons to the detector, resulting in a limited field of view.

  On the other hand, according to the study by the present inventors, for example, one EXB deflector cancels both the dipole field and the quadrupole field with respect to the beam from one direction, It was found that the performance of the electron beam application device can be improved by applying a dipole field and a quadrupole field. That is, without using the optical element as described above, electrons from the sample can be directly guided to the detector, and the field of view can be expanded.

  In addition, as a method of reducing the aberration generated in the Wien filter, there is a method of generating astigmatism by applying a quadrupole field and further a hexapole field and canceling out as in Patent Document 1. However, this is an effective method for electrons from one direction, and the method in the case of electrons from both directions is not mentioned. Patent Document 2 describes a method of canceling with an electric field and a magnetic field of a quadrupole field with respect to an electron beam from one direction by using an electromagnetic field superimposing type deflector having four electric field type and magnetic field type deflectors. However, this only affects the quadrupole field, and since it has only four poles for the electric field type and the magnetic field type deflector, it is impossible to cancel both the dipole field and the quadrupole field for a beam in one direction. Have difficulty.

  Embodiments to be described later have been made in view of the above, and other problems and novel features will become apparent from the description of the present specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of a typical embodiment will be briefly described as follows.

  The electron beam application apparatus according to the present embodiment includes an electromagnetic superposition type deflector having eight or more electric field type deflectors and magnetic field type deflectors, and a dipole electric field and a dipole magnetic field generated by the electromagnetic superposition type deflector. A first adjustment unit that adjusts the first ratio and the first intensity, and a second adjustment that adjusts the second ratio and the second intensity of the quadrupole electric field and quadrupole magnetic field generated by the electromagnetic superimposed deflector. Part.

  According to the one embodiment, the profile of the electron beam in the reverse direction can be adjusted without affecting the electron beam in one direction, and the performance of the electron beam application apparatus can be improved.

In the electron beam application apparatus by Embodiment 1 of this invention, it is the schematic which shows the structural example and operation example of the principal part, and is a figure showing the operation example at the time of measuring the profile and position of a primary electron beam. . In the electron beam application apparatus by Embodiment 1 of this invention, it is the schematic which shows the structural example and operation example of the principal part, and is a figure showing the operation example at the time of measuring the profile of the electron generated from the sample. It is the schematic which shows an example of the structure in the electron beam application apparatus by Embodiment 2 of this invention. In the SEM control part of FIG. 2, it is a figure which shows an example of the display display screen, and is a figure which shows an example of the adjustment method of the 1st ratio. FIG. 4 is a diagram illustrating an example of a first ratio adjustment method different from that in FIG. 3 on the display display screen in FIG. 3. FIG. 4 is a diagram illustrating an example of a first intensity adjustment method on the display screen of FIG. 3. It is a figure which shows an example of the 2nd intensity | strength adjustment method in the display display screen of FIG. It is the schematic which shows an example of the structure in the electron beam application apparatus by Embodiment 3 of this invention. In the SEM control part of FIG. 7, it is a figure which shows an example of the display display screen, and is a figure which shows an example of the 2nd intensity | strength adjustment method. In the SEM control part of FIG. 7, it is a figure which shows an example of the display display screen, and is a figure which shows an example of the 2nd intensity | strength adjustment method. It is the schematic which shows the structural example of an 8 pole type electromagnetic superposition type deflector. It is the schematic which shows an example of the structure in the electron beam application apparatus by Embodiment 4 of this invention. It is the schematic which shows an example of the structure in the electron beam application apparatus by Embodiment 5 of this invention. In the SEM control part of FIG. 12, it is a figure which shows an example of the display display screen, and is a figure which shows an example of the adjustment method of the 4th ratio. It is the schematic which shows an example of the structure in the electron beam application apparatus by Embodiment 6 of this invention. In the SEM control part of FIG. 14, it is a figure which shows an example of the display display screen, and is a figure which shows an example of the adjustment method of the offset for an astigmatic focus.

  In the following embodiment, when it is necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments. However, unless otherwise specified, they are not irrelevant, and one is the other. Some or all of the modifications, details, supplementary explanations, and the like are related. Further, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), especially when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and may be more or less than the specific number.

  Further, in the following embodiments, the constituent elements (including element steps and the like) are not necessarily indispensable unless otherwise specified and apparently essential in principle. Needless to say. Similarly, in the following embodiments, when referring to the shapes, positional relationships, etc. of the components, etc., the shapes are substantially the same unless otherwise specified, or otherwise apparent in principle. And the like are included. The same applies to the above numerical values and ranges.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiment, and the repetitive description thereof will be omitted.

(Embodiment 1)
<< Outline of electron beam application equipment (main part) >>
In response to the above-described problem, in the first embodiment, an electron beam application apparatus capable of adjusting the shape or the like of an electron beam in the reverse direction without affecting the electron beam in one direction with the EXB deflector, An electron beam adjustment method is provided. Specifically, for an electron beam in one direction, the action of the dipole electric field and the action of the dipole magnetic field are cancelled, and the action of the quadrupole electric field and the action of the quadrupole magnetic field are also cancelled. On the other hand, the action of the dipole electric field and the action of the dipole magnetic field are manifested, and the action of the quadrupole electric field and the action of the quadrupole magnetic field are also manifested.

  FIGS. 1A and 1B are schematic diagrams showing a configuration example and an operation example of the main part of the electron beam application apparatus according to Embodiment 1 of the present invention. FIG. FIG. 1B shows an operation example when measuring the profile and position of an electron beam, and FIG. 1B shows an operation example when measuring the profile of an electron generated from a sample. First, in FIG. 1A, the primary electron beam 100 reaches the sample via the EXB deflector 101 and the deflector 102. The primary electron beam that has reached the sample generates secondary electrons, backscattered electrons, Auger electrons, and the like. Here, the electrons generated from the sample are collectively referred to as a secondary electron beam 105. The secondary electron beam 105 generated from the sample is separated from the optical axis by the EXB deflector 101 and guided to the detector 106. The detected electrons are imaged in synchronization with the deflector 102, and the contrast of the material, shape, potential distribution, etc. on the sample can be observed.

As shown in FIG. 10, the EXB deflector 101 is, for example, an 8-pole electric field type deflector (corresponding to V _{1 to} V ₈ ) and an 8-pole magnetic field type deflector (coil) (corresponding to I _{1 to} I ₈ ). Composed. Each voltage (V _{1 to} V ₈ ) of the electric field type deflector and each current (I _{1 to} I ₈ ) of the coil are the current power source 108 and the voltage power source 109 shown in FIG. Is set by the first ratio and intensity adjusting means 110 and the second ratio and intensity adjusting means 111. An adjustment method using these will be described.

  In FIG. 1A, in order to determine the first voltage / current ratio input to the EXB deflector 101, the patterned sample 103 is irradiated with the primary electron beam, and the pattern image is generated by the primary electron deflection range 104 larger than the pattern. Get. First, a dipole electric field is applied to the EXB deflector 101 to such an extent that the movement of the pattern image can be confirmed by the voltage power source 109. The calculation of the dipole electric field is performed by the first ratio and intensity adjusting means 110 according to the number of poles of the EXB deflector. The deflection sensitivity in the electric field is calculated from the pattern movement amount of the image. Next, a dipole magnetic field is applied by the current power source 108 so that the pattern position returns to the original position below a specified value. At this time, the deflection direction becomes the same by applying a magnetic field in a direction rotated 90 degrees with respect to the electric field. When the pattern position returns to a predetermined value or less (that is, when the action of the dipole electric field and the action of the dipole magnetic field cancel each other), the ratio of voltage and current is set as the first ratio, It is stored in the intensity adjusting means 110.

  Subsequently, the second ratio and intensity adjusting unit 111 is used to calculate so as to apply a quadrupole electric field, and a voltage is applied to the EXB deflector 101 via the voltage power source 109. Astigmatism is generated by the quadrupole electric field, so that the profile of the pattern image changes. Next, a quadrupole magnetic field is applied from the current power source 108 so that the amount of change in the profile is not more than a specified value. At this time, by applying a magnetic field in a direction rotated by 45 degrees with respect to the electric field, the direction of occurrence of astigmatism becomes the same. When the amount of change in the profile is equal to or less than a specified value (that is, when the action of the quadrupole electric field and the action of the quadrupole magnetic field cancel each other), the ratio of the voltage and current is set as the second ratio. The ratio and intensity adjustment unit 111 stores the ratio. Here, the specified values of the position of the pattern image and the amount of change in the profile are determined by the resolution desired to be acquired and can be arbitrarily selected by the user.

  Next, an adjustment method for guiding the secondary electron beam 105 to the detector 106 will be described with reference to FIG. 1B. The secondary electron beam 105 is deflected by the deflector 102 and reaches the detector 106. When acquiring an image by primary electrons, the primary electron deflection range 104 is adjusted so that the pattern image is within the detection window 113 that is a detectable range of the detector 106 as described above. In order to observe the image of the beam 105, a large dipole field is applied to the deflector 102, and the primary electron deflection range 107 is adjusted so that the image formed by the detection window 113 is imaged. At this time, the patternless sample 112 is scanned by the primary electron beam 100 so that the image of the primary electron beam 100 does not affect the image of the secondary electron beam 105.

  The secondary electron beam image becomes bright when incident on the inside of the detection window 113, and becomes dark when electrons reach the outside of the detection window 113, so that contrast occurs, and the profile of the secondary electron beam from the bright and dark edges. Can be observed. Here, in the first embodiment, the detection window 113 is used to obtain the secondary electron beam image. However, if the secondary electron beam profile can be observed, for example, a mesh or the like before the detector 106. The same adjustment is possible by placing the pattern.

  Thus, if the first intensity applied to the EXB deflector 101 is adjusted, the beam profile of the secondary electron beam 105 can be observed. In order to determine the first intensity, the first electron beam image has a bright portion at the center of the image (that is, the deflection amount of the secondary electron beam by the EXB deflector falls within a desired range). The ratio and intensity adjusting means 110 adjusts the first intensity while maintaining the first ratio defined in FIG. 1A. Thereby, the first intensity is determined.

  Furthermore, the second intensity is adjusted by the second ratio and intensity adjusting unit 111 while maintaining the second ratio determined in FIG. 1A so that the beam profile by the bright and dark edge portions is adjusted to a desired profile. adjust. Thereby, the second intensity is determined. Here, the desired profile is to adjust the detection range of the primary electron beam to be larger than the observation region that the user wants to observe, and is adjusted to match the shape of the detection window 113. For example, when the detection window 113 is rectangular, the detection range of the primary electron beam can be increased by adjusting the secondary electron beam profile to be rectangular. These are due to the shape of the detection window 113 and are not particularly defined in the present embodiment.

  Here, the second ratio and intensity for the quadrupole field are for adjusting the secondary electron beam profile without affecting the primary electron beam as described above. It is essentially different from the ratio of quadrupole fields to achieve astigmatic focus of the primary electron beam. The quadrupole and quadrupole fields for acting on the astigmatic focus are in proportion to the dipole and dipole fields. Furthermore, the astigmatic focus can be realized with only either a quadrupole electric field or a quadrupole magnetic field. These are described in the sixth embodiment.

  As described above, typical effects obtained by using the electron beam application apparatus (electron beam adjusting method) of the first embodiment are as follows. First, the shape of the electron beam from the opposite direction can be adjusted without affecting the electron beam in one direction. Further, it is possible to cope with a case where the optical element cannot be arranged due to a spatial restriction in a scanning electron microscope (SEM) or the like. As a result, it is possible to direct electrons to the detector 106 by adjusting the spread of the electron beam on the detector 106 without increasing the aberration of the primary electron beam, and the field of view is maintained while maintaining the S / N. Can be spread. As a result, the electron beam measurement time can be shortened (throughput can be improved). Further, by using the method of the first embodiment, it becomes possible to adjust the spread of the electron beam according to the shape of the detector 106, and the degree of freedom in device design can be increased.

  The system of the first embodiment is not limited to the form as shown in FIG. 1, and various modifications can be made. For example, here, the profile of the secondary electron beam is adjusted without affecting the primary electron beam, but the profile of the primary electron beam may be adjusted without affecting the secondary electron beam. Is possible. Further, the deflector 102 is located between the EXB deflector 101 and the sample and is also deflected by the secondary electron beam. However, the same applies when the deflector 102 is upstream of the EXB deflector 101. At this time, a secondary electron beam image is obtained by changing the arrival position of the secondary electron beam due to the change of the arrival position of the primary electron beam. In addition, since the configuration is the simplest, an electromagnetic field superimposing deflector with 8 poles is shown, but the same effect can be expected with 8 or more poles. Furthermore, the system of the first embodiment can be applied to a projection type electron beam application apparatus such as a multi-beam type SEM.

(Embodiment 2)
<< Configuration and operation of electron beam application device (overall) >>
FIG. 2 is a schematic diagram showing an example of the configuration of an electron beam application apparatus according to Embodiment 2 of the present invention. The contents described in the first embodiment can also be applied to the second embodiment unless there are special circumstances. The electron beam application apparatus in FIG. 2 corresponds to, for example, an electron beam inspection (or measurement) SEM. The electron beam application apparatus includes an electron beam generating means 202, various optical parts that converge the electron beam and irradiate the sample 210, a stage 211 on which the sample 210 is mounted, a sample, An electron beam detector 213 for detecting electrons generated from 210 is provided. In addition, various control units / processing units responsible for control or processing of these blocks, and an SEM control unit 218 that manages the entire apparatus including the various control units / processing units are provided.

  Various optical system components include a blanking electrode 204, a current limiting diaphragm 205, two condenser lenses (upstream lenses) 206, an EXB deflector 207, an objective lens 208, a deflector 209, and the like. The various processing units include a detection signal amplification circuit 214 that amplifies a detection signal from the electron beam detector 213, an AD converter 215 that converts an analog signal from the amplification circuit into a digital signal, and the like. Among the various control units, a deflection amplifier 216 that applies a voltage to the deflector 209, a deflection control circuit 217 that adjusts a deflection direction, a deflection range, and the like, and an acceleration voltage of the primary electron beam irradiated to the sample are determined. A retarding voltage control unit 227 for controlling the retarding voltage, a lens intensity adjusting unit 228 for adjusting the intensity of each lens, and the like are included.

  Furthermore, among various control units, a dipole field control unit 219 responsible for controlling the EXB deflector 207, a quadrupole field control unit 220, a dipole magnetic field calculation unit 221, a dipole electric field calculation unit 222, and a quadrupole magnetic field calculation. A unit 223, a quadrupole electric field calculation unit 224, a magnetic field addition unit 225, an electric field addition unit 226, and the like. The dipole magnetic field calculation unit 221 and the dipole electric field calculation unit 222 perform a dipole magnetic field and a dipole electric field, respectively, according to the number of poles of the EXB deflector 207. At this time, the dipole field control unit 219 uses the first ratio and intensity of the dipole field applied to the EXB deflector 207 via the dipole magnetic field calculation unit 221 and the dipole electric field calculation unit 222 (that is, the dipole field). (Voltage) / dipole magnetic field (current) ratio and intensity). Similarly, the quadrupole magnetic field calculation unit 223 and the quadrupole electric field calculation unit 224 perform a quadrupole magnetic field and a quadrupole electric field, respectively, according to the number of poles of the EXB deflector 207. At this time, the quadrupole field control unit 220 uses the quadrupole field to be applied to the EXB deflector 207 via the quadrupole magnetic field calculation unit 223 and the quadrupole electric field calculation unit 224 (that is, the quadrupole electric field). (Voltage) / 4-pole magnetic field (current ratio and intensity) are controlled.

  The magnetic field addition unit 225 adds the calculation result of the dipole magnetic field calculation unit 221 and the calculation result of the quadrupole magnetic field calculation unit 223, and sets a magnetic field (current) to each pole of the EXB deflector 207 based on the addition result. To do. Similarly, the electric field addition unit 226 adds the calculation result of the dipole electric field calculation unit 222 and the calculation result of the quadrupole electric field calculation unit 224, and applies an electric field (voltage) to each pole of the EXB deflector 207 based on the addition result. ) Is set. The SEM control unit 218 includes a user interface represented by a personal computer, for example, and sets and stores various optical conditions via the various control units described above, and processes from the various processing units described above. The result is displayed (image output).

  In such a configuration, the primary electron beam 203 irradiated from the electron beam generating means 202 is adjusted to focus on the sample 210 using the two condenser lenses 206 and the objective lens 208, and the deflector 209 is adjusted. Used to scan on the sample 210. The acceleration voltage of the electron beam is adjusted by the retarding voltage applied to the stage 211 on which the sample 210 is mounted. A secondary electron beam 212 such as secondary electrons and backscattered electrons is generated from the sample 210 by the electron beam irradiated on the sample 210.

  The secondary electron beam 212 generated from the sample 210 is accelerated by the retarding electric field, passes through the objective lens 208, is deflected by the EXB deflector 207, and then reaches the electron beam detector 213. As described in the first embodiment, the first ratio and the second ratio are determined by changes in the position and profile of the primary electron beam 203 of the EXB deflector 207, and the second electron beam image is observed by observing the secondary electron beam image. The intensity of 1 and the intensity of the second are adjusted. For this purpose, a dipole field controller 219 for adjusting the first intensity and ratio for the dipole field and a quadrupole field control for adjusting the second intensity and ratio for the quadrupole field. Unit 220, two dipole field operation units (221, 222), two quadrupole field operation units (223, 224), and two addition units (225, 225) for adding these signals for each voltage and current 226).

  When the system of the first embodiment described above is simply realized, a current power source and a voltage power source are required for each pole number of the EXB deflector 207 (for example, in the case of FIG. 10, a total of 16 power sources). By using the configuration as in the second form, the number of current power supplies and voltage power supplies can be reduced. That is, the dipole magnetic field calculation unit 221 generates a current of each pole of the EXB deflector 207 necessary for realizing a dipole magnetic field from a certain current power source by using current distribution by a predetermined calculation circuit and the like. The magnetic field calculation unit 223 also generates a current of each pole of the EXB deflector 207 necessary for realizing a quadrupole magnetic field from a certain current power source using current distribution by a predetermined calculation circuit. Then, the magnetic field adding unit 225 adds the current for the dipole magnetic field and the current for the quadrupole magnetic field for each pole of the EXB deflector 207 and applies it to the EXB deflector 207. The same applies to the dipole electric field calculation unit 222, the quadrupole electric field calculation unit 224, and the electric field addition unit 226, and a voltage for each pole of the EXB deflector 207 is generated from a certain voltage power source and applied to the EXB deflector 207. .

For example, in the 8-pole EXB deflector as shown in FIG. 10, the calculation of the voltage and electrode of each pole (that is, the function of the calculation circuit of each calculation unit (221 to 224)) is expressed by equations (1) and (2). become that way. Here, n is an electrode number, V _defx and I _defx are the intensity of voltage and current in the X direction for forming a dipole field, and V _defy and I _defy are Y for forming a dipole field. The direction voltage and current intensity. V _defx , I _defx , V _defy , and I _defy correspond to the first intensity, respectively. Further, V _asx and I _asx are the intensity of voltage and current in the X direction for forming a quadrupole field, and V _asy and I _asy are the intensity of voltage and current in the Y direction for forming a quadrupole field. is there. V _asx , I _asx , V _asy , and I _asy each correspond to the second intensity. Here, the first ratio (α ₁ ) and the second ratio (α ₂ ) when the deflection direction of the secondary electron beam is the X direction are expressed by Expression (3) and Expression (4), respectively. The

In Expressions (1) to (4), for example, the dipole field control unit 219 determines each value of Expression (3), and the quadrupole field control unit 220 determines each value of Expression (4). Then, the dipole magnetic field calculation unit 221 uses the values (I _defx , I _defy ) determined by the dipole field control unit 219 and _uses the values (I _defx , I _defy ) according to the pole (n) of the EXB deflector. The term and the second term are calculated to generate a current for each pole. In addition, the dipole electric field calculation unit 222 uses the values (V _defx , V _defy ) determined by the dipole field control unit 219 and _uses the values (V _defx , V _defy ) according to the pole (n) of the EXB deflector. The term and the second term are calculated to generate a voltage for each pole. Similarly, the quadrupole magnetic field calculation unit 223 calculates and generates the third and fourth terms of Equation (2) using the values (I _asx , I _asy ) determined by the quadrupole field control unit 220, The quadrupole electric field calculation unit 224 uses the values (V _asx , V _asy ) determined by the quadrupole field control unit 220 to calculate and generate the third and fourth terms of Equation (1). In this case, for example, it corresponds to each value (V _defx , V _defy , V _asx , V _asy , I _defx , I _defy , I _asx , I _asy ) in the dipole field control unit 219 and the quadrupole field control unit 220. Thus, it is sufficient to provide four voltage power sources and four current power sources.

  Further, in FIG. 2, the user can arbitrarily adjust the ratio and strength via the SEM control unit 218. FIG. 3 is a diagram showing an example of the display display screen in the SEM control unit of FIG. 2, and is a diagram showing an example of a first ratio adjustment method. In FIG. 3, when the user selects the EXB adjustment tab 300, a primary system scan selection unit 301, a first ratio adjustment unit 303, and a second ratio adjustment unit 304 are displayed as the primary electron beam adjustment function. The Further, as a secondary electron beam adjustment function, the secondary system scan selection unit 305, the first intensity adjustment unit 306, and the second intensity adjustment unit (here, the second intensity X adjustment unit 307 and the second intensity). Y adjustment unit 308) is displayed. Further, an OBJ wobbler selection unit 309, an EXB wobbler selection unit 310, a wobbler stop selection unit 311, and an SEM image display unit 312 are displayed as auxiliary functions for adjustment.

  The basic adjustment method is as described in the first embodiment, but here the screen is configured so that the user can freely or easily adjust the ratio and intensity using the pointer 302 and numerical input. . When the primary system scan selection unit 301 is selected by the user, as described in the first embodiment, the deflector 209 in FIG. 2 is set to a deflection amount capable of observing the profile of the primary electron beam. 210 is set as a patterned sample, whereby a primary electron beam image is acquired.

  Here, for example, when the EXB wobbler selection unit 310 is selected, the intensity of the dipole field applied to the EXB deflector 207 can be automatically changed. Therefore, by observing the movement amount 314 of the primary electron pattern image (primary electron beam image) 313 at this time, the first ratio adjustment unit 303 can adjust the first ratio described above. Specifically, the first ratio is adjusted so that the amount of movement 314 of the primary electron pattern image 313 when the intensity of the dipole field is changed is minimized (ideally zero). Although illustration is omitted, the amount of change in the shape of the primary electron pattern image 313 when the intensity of the dipole field is changed is also minimized (ideally zero) with respect to the second ratio. As described above, the second ratio is adjusted using the second ratio adjustment unit 304.

  However, when the electron beam is focused on the deflection center of the EXB deflector 207, even if a dipole field is applied to the EXB deflector 207, the amount of movement of the pattern on the sample 210 may not be obvious. . In this case, for example, the adjustment may be performed as shown in FIG. 4 so that the change in the trajectory by the EXB deflector 207 is equal to or less than a specified value. FIG. 4 is a diagram illustrating an example of a first ratio adjustment method different from that in FIG. 3 on the display display screen in FIG. 3. Due to the change of the trajectory, the trajectory of electrons passing through the objective lens 208 changes, and at this time, the axis of the electron beam deviates from the center of the lens. For this reason, when a dipole field or a quadrupole field is applied to the EXB deflector 207 in a state where the axis of the objective lens 208 is passed in advance, the axis changes, so that an image is obtained when the intensity of the objective lens 208 is changed. Can be confirmed to move or change. Here, in FIG. 4, when the user selects the OBJ wobbler selection unit 401, the intensity of the objective lens 208 can be automatically changed. Therefore, in this state, the change in the trajectory when a dipole field or a quadrupole field is applied to the EXB deflector 207 is confirmed, and the first electron pattern image is moved or changed so that the amount of movement or change is not more than a specified value. Or the second ratio is adjusted.

  FIG. 5 is a diagram illustrating an example of a first intensity adjustment method on the display screen of FIG. When the secondary system scan selection unit 501 is selected by the user, as described in the first embodiment, the deflector 209 in FIG. 2 is set to a deflection amount capable of observing the profile of the secondary electron beam. 210 is set as a sample without a pattern, and a secondary electron beam image is acquired by this. Here, as shown in FIG. 5, the first intensity adjustment unit 503 is maintained in the state where the first ratio is maintained so that the bright portion 502 of the secondary electron beam image is arranged at the center of the image. To determine the first intensity.

  FIG. 6 is a diagram illustrating an example of a second intensity adjustment method on the display screen of FIG. As shown in FIG. 6, by confirming the profile of the secondary electron beam from the secondary electron beam image 602, the second intensity adjusting unit (for example, the second intensity X, for example) while maintaining the second ratio described above. The second intensity is determined using the adjustment unit 601). Specifically, the second intensity is determined so as to have a shape similar to the shape of the detection unit (corresponding to the detection window 113 in FIG. 1) in the electron beam detector 213 in FIG.

  Thus, the first and second ratios and intensities of the voltage and current applied to the EXB deflector 207 are determined. These ratios and intensities vary depending on the acceleration voltage of the primary electron beam, the retarding voltage of the sample, and the intensity of each lens. Therefore, the first and second ratios of voltage and current applied to the EXB deflector 207 in correspondence with other optical conditions such as the acceleration voltage of the primary electron beam, the retarding voltage of the sample, and the intensity of each lens The intensity is stored in the SEM control unit 218 and stored for each optical condition. Accordingly, when the user selects a desired optical condition, the first and second ratios and intensities are automatically set together with other optical conditions by the SEM control unit 218, and the time for adjustment is shortened. Is possible.

  As described above, by using the electron beam application apparatus (electron beam adjustment method) according to the second embodiment, the following effects are typically obtained in addition to the various effects described in the first embodiment. First, it becomes possible to reduce the voltage power supply and current power supply of the apparatus, and it is possible to reduce the cost of the apparatus and facilitate the setting of the voltage / current. In addition, it is possible to provide a user with an easy and highly flexible adjustment function. In addition, the system of this Embodiment 2 is not limited to the said form, A various deformation | transformation is possible. For example, the arrangement on the screen in the second embodiment can be freely changed by design, and the selection tool can have various forms.

(Embodiment 3)
<< Configuration and operation of electron beam application apparatus (whole) (variation example [1]) >>
FIG. 7 is a schematic diagram showing an example of the configuration of an electron beam application apparatus according to Embodiment 3 of the present invention. The contents described in the first and second embodiments can also be applied to the third embodiment unless there are special circumstances. The electron beam application apparatus in FIG. 7 corresponds to a multi-electron beam inspection (or measurement) SEM, for example, as a projection-type electron beam application apparatus. The electron beam application apparatus 700 is equipped with an electron beam generating means 701, various optical system parts that divide the electron beam into a plurality of electron beams, individually converge and irradiate the sample 710, and the sample 710. Stage 711, and an electron beam detection component for detecting electrons generated from the sample 710. In addition, various control units / processing units responsible for control or processing of these blocks, and an SEM control unit 730 that manages the entire apparatus including the various control units / processing units are provided.

  The various optical system components include an upstream lens 703, a beam separation unit 704, an individual focusing lens 705, an electromagnetic field superimposing (EXB) deflector 707, an objective lens 708, a deflector 709, and the like. The electron beam detection components include a secondary electron lens 712, a swing back deflector 713, a plurality of detectors 714, and the like. The various processing units include a plurality of detection amplifiers 715, a plurality of analog-digital (AD) converters 716, and the like. The various control units include a lens intensity control unit 717, an individual beam control unit 718, a deflection amplifier 727, a deflection control circuit 728, a retarding voltage control unit 729, and the like. Further, among the various control units, as described in Embodiment 2, the magnetic field addition unit 719, the electric field addition unit 720, the dipole magnetic field calculation unit 721, the dipole electric field calculation unit 722, and the quadrupole magnetic field calculation unit 723. A quadrupole electric field calculation unit 724, a dipole field control unit 725, a quadrupole field control unit 726, and the like are included.

  In such a configuration, the primary electron beam 702 irradiated from the electron beam generating unit 701 is adjusted to be approximately parallel through the upstream lens (irradiation optical system) 703 and reaches the beam separation unit 704. The beam separation unit 704 separates the electron beam that has passed through the upstream lens 703 into a plurality of primary electron beams 706, and each of the primary electron beams 706 is individually converged by the individual convergence lens 705. The converged primary electron beams 706 reach a sample 710 mounted on a stage 711 via an electromagnetic field superimposing (EXB) deflector 707 and an objective lens (projection optical system) 708 ( Projected). At this time, the plurality of primary electron beams 706 that reach the sample are deflected simultaneously by the deflector 709, and a plurality of secondary electron beams 731 are generated corresponding to the plurality of primary electron beams 706. The

  The plurality of secondary electron beams 731 are separated from the primary optical system by an electromagnetic field superimposing (EXB) deflector 707, enter the secondary optical system, and converge by the secondary electron lens 712, and then turn back deflector. The detection units of the plurality of detectors 714 are respectively reached via 713 and the like. A plurality of detection signals thereby are processed in parallel via a plurality of detection amplifiers 715 and a plurality of analog-digital (AD) converters 716, and the SEM control unit 730 receives the processing result and outputs it in the deflection control circuit 728. A plurality of images are formed in synchronization with the deflection signal.

  Here, in order to simultaneously reach a plurality of secondary electron beams 731 to the corresponding detectors (714), the secondary electron beams need to reach to be aligned with the arrangement of the plurality of detectors 714. There is. However, when a large deflection action is generated by the EXB deflector 707, the arrangement of a plurality of secondary electron beams (XY magnification in a projection type electron beam application apparatus) changes due to astigmatism, and is matched with the arrangement of detectors. Can be difficult. Therefore, it is beneficial to adjust the arrangement of a plurality of secondary electron beams using the following method.

  8 and 9 are diagrams illustrating an example of the display display screen in the SEM control unit of FIG. 7, and a diagram illustrating an example of a second intensity adjustment method. As described in Embodiment 2, when a secondary system scan is selected and one secondary electron beam image is acquired, a plurality of detector images 802 as shown in the SEM image display unit 801 in FIG. 8 are acquired. it can. Further, when four secondary electron beam images are superimposed on one image, four images corresponding to a plurality of detector images are simultaneously displayed as shown in the SEM image display unit 902 of FIG. Here, the brightest first bright portion 903 in which the bright portions of the respective detection units overlap each other is a place where the respective detection units can separately detect the respective electrons. Therefore, the arrangement of a plurality of secondary electron beams is adjusted using a second intensity adjusting unit (for example, the second intensity X adjusting unit 901) so that the first bright portion 903 is expanded to a specified value or more. Thereby, the second intensity is determined. Other ratios and strengths are as described in the first and second embodiments.

  As described above, by using the electron beam application apparatus (electron beam adjustment method) of the third embodiment, in addition to the various effects described in the first and second embodiments, an arrangement of a plurality of primary electron beams can be further provided. Without changing, it is possible to change only the arrangement of a plurality of secondary electron beams. As a result, in the projection-type electron beam application apparatus, it is possible to detect a larger field of view and to improve the throughput. In addition, the system of this Embodiment 3 is not limited to the said form, A various deformation | transformation is possible. For example, in the fourth embodiment, the arrangement of a plurality of secondary electron beams in a multi-beam type SEM is adjusted, but a projection electron beam application apparatus such as a mirror electron microscope or a surface imaging type electron optical system may be used. Applicable. In this case, the XY magnification of the surface beam can be adjusted.

(Embodiment 4)
<< Configuration and operation of electron beam application apparatus (whole) (variation example [2]) >>
FIG. 11 is a schematic diagram showing an example of the configuration of an electron beam application apparatus according to Embodiment 4 of the present invention. The contents described in the first and second embodiments can also be applied to the fourth embodiment unless there are special circumstances. The electron beam application apparatus of FIG. 11 has a hexapole field control unit 1109 for determining a third ratio and intensity for applying a hexapole field to the configuration example of FIG. 2 of the second embodiment described above. And a hexapole magnetic field calculation unit 1105 and a hexapole electric field calculation unit 1106 are added. Moreover, the electromagnetic field superimposition type (EXB) deflector 1112 has a 12-pole structure as disclosed in Patent Document 1, for example.

  As shown in the second embodiment, the dipole field and the quadrupole field are divided into a dipole magnetic field calculation unit 1101, a dipole electric field calculation unit 1102, a quadrupole magnetic field calculation unit 1103, a quadrupole electric field calculation unit 1104, and a dipole field control. It is adjusted by the unit 1107 and the quadrupole field control unit 1108. The magnetic field addition unit 1110 adds the calculation result of the dipole magnetic field calculation unit 1101, the calculation result of the quadrupole magnetic field calculation unit 1103, and the calculation result of the hexapole magnetic field calculation unit 1105, and based on the addition result, the EXB deflector 1112. A magnetic field (current) is set for each pole. Similarly, the electric field adding unit 1111 adds the calculation result of the dipole electric field calculation unit 1102, the calculation result of the quadrupole electric field calculation unit 1104, and the calculation result of the hexapole electric field calculation unit 1106, and based on the addition result, EXB An electric field (voltage) is set at each pole of the deflector 1112.

  In this way, the third-order astigmatism (third-time astigmatism) that can be generated by the EXB deflector 1112 is generated by applying the hexapole field to generate third-order astigmatism (third-time astigmatism). It becomes possible to cancel. At this time, as in the case of the dipole field and the quadrupole field described above, the hexapole field and the hexapole magnetic field are applied in order to apply the hexapole field only to the secondary electron beam without affecting the primary electron beam. Means (ie, a hexapole field control unit 1109) for determining the ratio and intensity (third ratio and intensity). Here, the third ratio and intensity adjustment method is as follows in the same manner as in the first embodiment.

  First, the voltage of each pole of the EXB deflector 1112 is calculated by the hexapole electric field calculation unit 1106 and applied to the EXB deflector 1112. Since the third-order aberration is generated by this hexapole electric field, the profile of the pattern image of the primary electron beam changes. A hexapole magnetic field is applied via the hexapole magnetic field calculation unit 1105 so that the profile change is not more than a specified value. At this time, if the hexapole magnetic field is rotated by 30 degrees with respect to the hexapole electric field, the direction of occurrence of the third-order aberration is the same. A hexapole electric field and a hexapole magnetic field when the profile change is equal to or less than a predetermined value are determined as a third ratio. Next, the third intensity is determined while observing the profile of the secondary electron beam with this ratio. This makes it possible to correct the tertiary aberration of the secondary electron beam without affecting the primary electron beam. Note that the system of the fourth embodiment can of course be applied to a projection type electron beam application apparatus as shown in the third embodiment.

(Embodiment 5)
<< Configuration and operation of electron beam application apparatus (whole) (variation example [3]) >>
FIG. 12 is a schematic diagram showing an example of the configuration of an electron beam application apparatus according to Embodiment 5 of the present invention. The electron beam application apparatus shown in FIG. 12 is different in the function of the dipole field control unit 1201 from the configuration example of FIG. 2 of the second embodiment described above. It has become. The dipole field control unit 1201 has a function of adjusting the fourth ratio in addition to the function of adjusting the first ratio and intensity described in FIG. The fourth ratio is a ratio between the first intensity and adjusts the dipole field in the direction rotated by 90 degrees with respect to the dipole field determined by the first intensity with the fourth ratio. .

In addition to applying the dipole field determined by the first intensity to the EXB deflector 1204 via the dipole magnetic field calculation unit 1202 and the dipole electric field calculation unit 1203, the dipole field control unit 1201 has a fourth ratio. Accordingly, a dipole field rotated by 90 degrees with respect to the dipole field is applied to the EXB deflector 1204 in a superimposed manner. When the EXB deflector 1204 gives a large deflection action to the secondary electron beam, a positional shift may occur in a direction rotated 90 degrees with respect to the deflection direction. This phenomenon occurs in principle when electrons have a velocity in the deflection direction, and depends on the intensity of the dipole field. Therefore, the fourth ratio is a means for adjusting the positional deviation amount to a specified value or less. For example the polarization direction of the secondary electron beam and X-direction, the fourth case of the set to alpha ₄ ratio of dipole field control unit 1201, (5) and bipolar in the Y direction so as to satisfy the equation (6) A child electric field (V _defy ) and a dipole magnetic field (I _defy ) are determined.

  FIG. 13 is a diagram illustrating an example of the display display screen in the SEM control unit of FIG. 12, and is a diagram illustrating an example of a fourth ratio adjustment method. When the first intensity is adjusted using the SEM control unit 1205 of FIG. 12 in the same manner as in FIG. 3 of the second embodiment, the bright part of the secondary electron beam image is brought to the center of the image. As shown in FIG. 13, a positional deviation 1302 occurs in the direction rotated 90 degrees with respect to the EXB deflection direction. Accordingly, the display screen of FIG. 13 is provided with a fourth ratio adjustment unit 1301 in addition to the items on the display screen of FIG. 3 and the like, and the user can change the positional deviation 1302 to a predetermined value or less. Adjustment can be performed using a ratio adjustment unit 1301 of four. As a result, it is possible to automatically correct the positional deviation that occurs in the direction rotated by 90 degrees with respect to the deflection direction that occurs when the secondary electron beam is largely deflected. The system of the fifth embodiment can of course be applied to a projection type electron beam application apparatus as shown in the third embodiment.

(Embodiment 6)
<< Configuration and operation of electron beam application apparatus (whole) (variation example [4]) >>
In the sixth embodiment, a method of adjusting the profile of the secondary electron beam while realizing the astigmatic focus of the primary electron beam while maintaining the condition will be described. For example, as disclosed in Patent Document 1 and the like, it is known that the ratio of the dipole field and the quadrupole field only needs to satisfy Expression (7) in order to realize astigmatic focus. Here, E ₁ and B ₁ are a dipole electric field and a dipole magnetic field, E ₂ and B ₂ are a quadrupole electric field and a quadrupole magnetic field, and R is a rotation radius (cyclotron radius) of a charged particle in the presence of the magnetic field. .

  Here, if an ideal electromagnetic field superposition type deflector having eight or more poles and having the same electric field and magnetic field distribution is used, the quadrupole electric field and the quadrupole magnetic field can give the same action to electrons. In this case, the astigmatic focus can be realized only with either a quadrupole electric field or a quadrupole magnetic field. Here, as an example, it is assumed that astigmatic focus is realized using a quadrupole electric field.

  FIG. 14 is a schematic diagram showing an example of the configuration of an electron beam application apparatus according to Embodiment 6 of the present invention. The electron beam application apparatus shown in FIG. 14 is different in the function of the quadrupole field control unit 1401 from the configuration example of FIG. 2 of the second embodiment described above. It has become. The quadrupole field control unit 1401 has an offset adjustment function for astigmatic focus in addition to the second ratio and intensity adjustment function described in FIG. The quadrupole field control unit 1401 applies an offset adjustment in addition to applying a quadrupole field determined by the second ratio and intensity to the EXB deflector 1404 via the quadrupole magnetic field calculation unit 1402 and the quadrupole electric field calculation unit 1403. A quadrupole field (in this case, a quadrupole electric field) set in accordance with the function is applied to the EXB deflector 1404 in a superimposed manner via a calculation unit (here, a quadrupole electric field calculation unit 1403).

  FIG. 15 is a diagram illustrating an example of the display display screen in the SEM control unit of FIG. 14, and is a diagram illustrating an example of an offset adjustment method for astigmatic focus. First, similarly to the case of FIG. 3 of the second embodiment, a scanning image by the primary electron beam is acquired by the primary system scan selection unit using the SEM control unit 1405 of FIG. 14, and the electric field of the dipole field is acquired. And the magnetic field ratio 1 (first ratio) is determined. Next, the secondary system scan selection unit acquires a scanned image by the secondary electron beam, and determines the dipole field intensity (first intensity).

  Subsequently, a scanning image by the primary electron beam is acquired again, and the on-sample pattern 1502 before adjustment is observed as shown in FIG. Here, the display screen of FIG. 15 is provided with a quadrupole electric field offset adjustment unit 1501 in addition to each item on the display screen of FIG. The user can perform adjustment using the quadrupole electric field offset adjustment unit 1501 so as to satisfy the condition of astigmatic focus, and an adjusted on-sample pattern 1503 can be obtained.

Next, with the quadrupole electric field offset applied, adjustment is performed in the same manner as in FIG. 3 of the second embodiment. That is, the ratio 2 (second ratio) of the electric field and the magnetic field of the quadrupole field is determined, and further, a scanning image by the secondary electron beam is acquired and the secondary electron beam profile is confirmed while confirming the secondary electron beam profile. Determine the intensity of 2. Thereby, as a quadrupole field, a quadrupole electric field adjusted in a superimposed manner with a quadrupole electric field offset as a starting point and a quadrupole magnetic field that cancels the overlapping portion of the quadrupole electric field are applied to the primary electron beam. As a result, only the quadrupole electric field offset acts effectively, and the quadrupole electric field and the quadrupole magnetic field act on the secondary electron beam. For example, when the deflection direction is the X direction, if the quadrupole electric field offset is V _as0 , the quadrupole electric field is adjusted to be expressed by equation (8).

  As described above, by using the electron beam application apparatus (electron beam adjustment method) of the sixth embodiment, in addition to the various effects described in the first and second embodiments, the astigmatic focus of the primary electron beam. Thus, it is possible to adjust the profile of the secondary electron beam. In addition, the system of this Embodiment 6 is not limited to the said form, A various deformation | transformation is possible. For example, in the sixth embodiment, an electric field is used as a quadrupole field offset for realizing astigmatic focus, but a magnetic field may be used instead. Furthermore, the system of the sixth embodiment can be applied to a projection-type electron beam application apparatus, and the XY magnification of a beam can be adjusted with a planar beam. Further, in the multi-beam SEM, the beam arrangement of the primary electron beam can be adjusted.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiments. However, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the invention.

  100: primary electron beam, 101: EXB deflector, 102: deflector, 103: sample with pattern, 104: primary electron deflection range, 105: secondary electron beam, 106: detector, 107: primary electron deflection Range: 108: Current power source, 109: Voltage power source, 110: First ratio and intensity adjusting means, 111: Second ratio and intensity adjusting means, 112: Sample without pattern, 113: Detection window, 201: Vacuum Case: 202: Electron beam generating means, 203: Primary electron beam, 204: Blanking electrode, 205: Current limiting diaphragm, 206: Upstream lens, 207: EXB deflector, 208: Objective lens, 209: Deflector, 210: Sample, 211: Stage, 212: Secondary electron beam, 213: Electron beam detector, 214: Detection signal amplification circuit, 215: AD converter, 216: Deflection 217: deflection control circuit, 218: SEM control unit, 219: dipole field control unit, 220: quadrupole field control unit, 221: dipole magnetic field calculation unit, 222: dipole electric field calculation unit, 223: quadrupole Magnetic field calculation unit, 224: quadrupole electric field calculation unit, 225: magnetic field addition unit, 226: electric field addition unit, 227: retarding voltage control unit, 228: lens intensity adjustment means, 300: EXB adjustment tab, 301: primary system Scan selection unit, 302: pointer, 303: first ratio adjustment unit, 304: second ratio adjustment unit, 305: secondary system scan selection unit, 306: first intensity adjustment unit, 307: second intensity X adjustment unit, 308: second intensity Y adjustment unit, 309: OBJ wobbler selection unit, 310: EXB wobbler selection unit, 311: wobbler cancel selection unit, 312: SEM image display unit, 313: primary electron Turn image, 314: amount of movement, 401: OBJ wobbler selection unit, 501: secondary system scan selection unit, 502: bright portion of secondary electron beam image, 503: first intensity adjustment unit, 601: second intensity X adjustment unit, 602: secondary electron beam image, 700: electron beam application device, 701: electron beam generating means, 702: primary electron beam, 703: upstream lens, 704: beam separation unit, 705: individual focusing lens, 706: Multiple primary electron beams, 707: EXB deflector, 708: Objective lens, 709: Deflector, 710: Sample, 711: Stage, 712: Secondary electron lens, 713: Back deflector, 714: Plural detectors, 715: Plural detection amplifiers, 716: Plural AD converters, 717: Lens intensity controller, 718: Individual beam controller, 719: Magnetic field adder, 720: Electric field adder, 721: Dipole magnetic field calculator, 722: Dipole electric field calculator, 723: Quadrupole magnetic field calculator, 724: Quadrupole electric field calculator, 725: Dipole field controller, 726: Quadrupole field control 727: deflection amplifier, 728: deflection control circuit, 729: retarding voltage control unit, 730: SEM control unit, 731: multiple secondary electron beams, 801: SEM image display unit, 802: multiple detectors Image, 901: second intensity X adjustment unit, 902: SEM image display unit, 903: first bright part, 1101: dipole magnetic field calculation unit, 1102: dipole electric field calculation unit, 1103: quadrupole magnetic field calculation unit, 1104: Quadrupole electric field calculation unit, 1105: Hexapole magnetic field calculation unit, 1106: Hexapole electric field calculation unit, 1107: Dipole field control unit, 1108: Quadrupole field control unit, 1109: Hexapole field control unit, 11 0: Magnetic field adder, 1111: Electric field adder, 1112: EXB deflector, 1201: Dipole field controller, 1202: Dipole magnetic field calculator, 1203: Dipole electric field calculator, 1204: EXB deflector, 1205: SEM control unit, 1301: fourth ratio adjustment unit, 1302: positional deviation, 1401: quadrupole field control unit, 1402: quadrupole magnetic field calculation unit, 1403: quadrupole electric field calculation unit, 1404: EXB deflector, 1405: SEM control unit, 1501: quadrupole electric field offset adjustment unit, 1502: pattern on sample before adjustment, 1503: pattern on sample after adjustment.

Claims (16)

An electromagnetic superimposed deflector having at least 8 poles each of an electric field deflector and a magnetic field deflector;
A first adjustment unit for adjusting a first ratio and a first intensity of a dipole electric field and a dipole magnetic field generated by the electromagnetic superimposing deflector;
An electron beam application apparatus comprising: a second adjustment unit that adjusts a second ratio and a second intensity between a quadrupole electric field and a quadrupole magnetic field generated by the electromagnetic superimposing deflector. The electron beam application apparatus according to claim 1,
The direction of the dipole electric field is a direction rotated by 90 degrees with respect to the direction of the dipole magnetic field,
The electron beam application apparatus, wherein the direction of the quadrupole electric field is a direction rotated 45 degrees with respect to the direction of the quadrupole magnetic field. The electron beam application apparatus according to claim 2, wherein
The first adjustment unit adjusts the first ratio so that the action of the dipole electric field and the action of the dipole magnetic field cancel each other with respect to the electron beam in the first direction,
The second adjustment unit adjusts the second ratio so that the action of the quadrupole electric field and the action of the quadrupole magnetic field cancel each other with respect to the electron beam in the first direction,
The first adjustment unit adjusts the first intensity so that an electron beam in a second direction that is opposite to the first direction is in a desired state,
The second adjustment unit adjusts the second intensity so that the electron beam in the second direction is in a desired state. The electron beam application apparatus according to claim 1, further comprising:
A scanning unit that scans a primary electron beam on the sample;
A first measurement unit for measuring the profile and position of the primary electron beam;
A detector for detecting a secondary electron beam generated from the sample;
A second measuring unit for measuring the profile and position of the secondary electron beam,
The first adjustment unit includes:
A dipole field controller configured to set a voltage value of the first voltage power source and a current value of the first current power source based on the first ratio and the first intensity;
A dipole electric field calculation unit for generating a voltage to be applied to each pole of the electromagnetic superimposed deflector from the first voltage power source;
A dipole magnetic field calculation unit that generates a current to be applied to each pole of the electromagnetic superimposed deflector from the first current power source,
The second adjusting unit is
A quadrupole field controller that sets a voltage value of the second voltage power source and a current value of the second current power source based on the second ratio and the second intensity;
A quadrupole electric field calculation unit for generating a voltage to be applied to each pole of the electromagnetic superimposing deflector from the second voltage power source;
An electron beam application apparatus comprising: a quadrupole magnetic field calculation unit that generates a current to be applied to each pole of the electromagnetic superimposing deflector from the second current power source. The electron beam application apparatus according to claim 4, wherein
The second adjustment unit adjusts the second ratio so that a profile of the primary electron beam measured by the first measurement unit and a change amount of the position are equal to or less than a predetermined value. apparatus. The electron beam application apparatus according to claim 5, wherein
The second adjustment unit adjusts the second intensity so as to generate astigmatism of the secondary electron beam. The electron beam application apparatus according to claim 1,
The electron beam application apparatus is an electron beam application apparatus which is a projection type electron beam application apparatus. The electron beam application apparatus according to claim 7, further comprising:
A scanning unit that scans a plurality of primary electron beams on the sample;
A first measurement unit for measuring profiles and positions of the plurality of primary electron beams;
A detection unit for detecting a plurality of secondary electron beams generated from the sample;
A second measuring unit for measuring the profile and position of the plurality of secondary electron beams,
The first adjustment unit includes:
A dipole field controller configured to set a voltage value of the first voltage power source and a current value of the first current power source based on the first ratio and the first intensity;
A dipole electric field calculation unit for generating a voltage to be applied to each pole of the electromagnetic superimposed deflector from the first voltage power source;
A dipole magnetic field calculation unit that generates a current to be applied to each pole of the electromagnetic superimposed deflector from the first current power source,
The second adjusting unit is
A quadrupole field controller configured to set a voltage value of the second voltage power source and a current value of the second current power source based on the second ratio and the second intensity;
A quadrupole electric field calculation unit for generating a voltage to be applied to each pole of the electromagnetic superimposing deflector from the second voltage power source;
An electron beam application apparatus comprising: a quadrupole magnetic field calculation unit that generates a current to be applied to each pole of the electromagnetic superimposing deflector from the second current power source. The electron beam application apparatus according to claim 7, wherein
The second adjustment unit adjusts the second intensity to determine an XY magnification of the plurality of secondary electron beams. The electron beam application apparatus according to claim 4, wherein
The electromagnetic superimposed deflector has 12 poles each of the electric field deflector and the magnetic field deflector,
The electron beam application apparatus further includes a third adjustment unit that adjusts a third ratio and a third intensity between a hexapole electric field and a hexapole magnetic field generated by the electromagnetic superimposing deflector. . The electron beam application apparatus according to claim 10, wherein
The direction of the hexapole electric field is a direction rotated by 30 degrees with respect to the direction of the hexapole magnetic field,
The third adjusting unit adjusts the third ratio so that the amount of change in the profile and position of the primary electron beam measured by the first measuring unit is equal to or less than a predetermined value. . The electron beam application apparatus according to claim 11, wherein
The third adjustment unit adjusts the third intensity so as to generate a three-fold astigmatism of the secondary electron beam. The electron beam application apparatus according to claim 1,
Furthermore, for the dipole electric field or dipole magnetic field rotated 90 degrees with respect to the direction of the dipole electric field or dipole magnetic field, the intensity of the dipole electric field or dipole magnetic field is set to the first intensity. An electron beam application apparatus having a fourth adjustment unit that adjusts to maintain the fourth ratio. The first ratio of the dipole electric field and the dipole magnetic field, the quadrupole electric field and the quadrupole magnetic field so that the amount of change in the profile or position of the first electron beam coming from the first direction is not more than a predetermined value. A first step for determining each second ratio;
The dipole electric field and the dipole magnetic field while maintaining the first ratio so that the deflection amount of the second electron beam coming from the second direction opposite to the first direction falls within a predetermined range. A second step of determining a first intensity of
An electron beam comprising: a third step of determining a second intensity of the quadrupole electric field and the quadrupole magnetic field while maintaining the second ratio so that the profile of the second electron beam approaches a predetermined profile. Adjustment method. 15. The electron beam adjustment method according to claim 14, further comprising:
Subsequent to the first step, the aberration of the first electron beam caused by the dipole electric field and the dipole magnetic field is superimposed on the quadrupole electric field or the quadrupole magnetic field so as to be equal to or less than a predetermined value. A fourth step of determining an offset quadrupole electric field or offset quadrupole magnetic field to be
In the third step, while the offset quadrupole electric field or the offset quadrupole magnetic field is applied, the second ratio is maintained so that the profile of the second electron beam approaches a predetermined profile. An electron beam adjustment method for determining a second intensity of the quadrupole electric field and the quadrupole magnetic field. The first ratio of the dipole electric field and the dipole magnetic field, the quadrupole electric field and the quadrupole magnetic field, such that the amount of change in the profile or position of the plurality of electron beams coming from the first direction is equal to or less than a predetermined value. Each of the second ratios of
The dipole electric field and the dipole magnetic field while maintaining the first ratio so that deflection amounts of a plurality of electron beams coming from the second direction opposite to the first direction are within a predetermined range. And determine the first intensity of
The second intensity of the quadrupole electric field and the quadrupole magnetic field is determined while maintaining the second ratio so that the relative positions of the plurality of electron beams coming from the second direction approach a predetermined relative position. Electron beam adjustment method.

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