JP2013235983A - High voltage part potting structure and potting method of high voltage part - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high voltage part potting structure that inhibits the occurrence and development of cracks in a potting material (a resin), easily prevents the insulation deterioration, and is suitable for a case that potting is conducted not for each terminal but for an entire circuit at one time, and to provide a potting method of the high voltage part.SOLUTION: A high voltage part potting structure includes: a transformer 1; a substrate 2; a chassis 5 supporting the transformer 1 and the substrate 2; and a potting material 6 filling areas around the transformer 1 and the substrate 2 and sealing the transformer 1, the substrate 2, and a nonwoven cloth (one of a first nonwoven cloth 3, a second nonwoven cloth 4, a third nonwoven cloth 7, a nonwoven cloth piece 8).

Description

  The present invention relates to a high-voltage part potting structure and a high-voltage part potting method in the field of electric circuits that handle high voltages in a narrow space where a sufficient spatial distance with respect to voltage cannot be secured.

  Conventionally, when realizing a high voltage circuit in a space-saving manner, there is a technique called potting (potting method, resin potting) for filling a resin insulator between circuits to ensure a withstand voltage (for example, Patent Document 1). reference). For high voltage circuits that require potting, a high voltage power supply unit (such as a TWT (traveling wave tube)) used in the field of electric circuits that handle high voltages in a narrow space where a sufficient spatial distance for the voltage cannot be secured. For example, see Patent Document 2).

  In the potting method described in Patent Document 1, since the object to be potted is for each terminal portion of the transformer, the sheet member is wound around the periphery of the terminal portion, the inside is sealed, and then the sheet member is removed. The purpose is to reduce the amount of potting material (resin) used.

  In general, the potting method is filled with an insulator so that cracks and voids (spaces due to bubbles) do not enter in a vacuum state, but there are places where cracks and voids have occurred in the solidified (cured) potting material (resin). If there is, it causes arc discharge due to poor insulation. Depending on the type of resin selected for the potting material, shrinkage (condensation) may occur in the process of hardening the insulator, and the insulator may be cracked by tensile stress or the like, and the insulation performance of the insulator may deteriorate. In order to prevent the occurrence and development of cracks, it is necessary to release the stress by releasing the upper surface of the resin-filled portion, or to devise the internal structure so that bubbles can be easily removed.

  Conventionally, as a countermeasure for cracks that occur during molding of a molded product, there is a method in which a nonwoven fabric is bonded when the molded product is cured (see, for example, Patent Document 3). Nonwoven fabrics are generally known in the form of sheets and cylinders (see, for example, Patent Document 4).

JP 61-27615 (FIGS. 1 and 2) JP-A-8-221140 (FIG. 1) Japanese Patent Laid-Open No. 11-245318 (FIG. 1) Japanese Patent Laid-Open No. 11-222758 (FIG. 4)

  In order to improve insulation reliability in the field of high-voltage power supplies (electric circuits that handle high voltages in a narrow space where a sufficient space distance against voltage cannot be secured) It is necessary to prevent insulation deterioration. Specifically, in order to prevent arc discharge from occurring, it is important to fill the insulating portion and the ground portion with a potting material (resin) without a gap.

  However, the potting method according to Patent Document 1 has a problem that the range of resin potting is limited only to the terminal portion of the transformer and is not intended to perform the entire potting including the transformer and the circuit board at once. It was. Further, the potting method according to Patent Document 1 includes a step of peeling the sheet member after potting the terminal portion, but there is also a problem that it takes time to peel off when there are a large number of terminals.

  The present invention has been made to solve the above-described problems. It is easy to prevent cracking and progress of a potting material (resin) and prevent insulation deterioration. An object of the present invention is to provide a high-voltage part potting structure and a high-voltage part potting method that are suitable for performing entire potting at once.

  The high voltage part potting structure according to the invention of claim 1 includes a transformer, a cylindrical first nonwoven fabric surrounding the transformer, a substrate having a plurality of protruding portions on at least one surface, a side surface of the substrate, A cylindrical second nonwoven fabric surrounding the protruding portion, a chassis supporting the transformer and the substrate, the transformer including the first nonwoven fabric, and the substrate including the second nonwoven fabric, and the transformer and And a potting material sealing the substrate.

  The high-voltage part potting structure according to the invention of claim 2 is a substrate having a transformer, a cylindrical first nonwoven fabric wound around the transformer and surrounding the transformer, and a plurality of protruding portions on at least one surface. And a cylindrical second nonwoven fabric wound around a side surface of the substrate and surrounding the protruding portion, a chassis supporting the transformer and the substrate, the transformer including the first nonwoven fabric, and the second nonwoven fabric. A potting material filled around the substrate and sealing the transformer and the substrate is provided.

  The high voltage part potting structure according to the invention of claim 3 includes a transformer, a cylindrical first nonwoven fabric into which the transformer is inserted, a substrate having a plurality of protrusions on at least one surface, and the substrate is inserted. A cylindrical second nonwoven fabric surrounding a side surface of the substrate and the protruding portion; a chassis supporting the transformer and the substrate; the transformer including the first nonwoven fabric; and the substrate including the second nonwoven fabric. A potting material filled around and sealing the transformer and the substrate is provided.

  The high voltage part potting structure according to the invention of claim 4 is the one according to any one of claims 1 to 3, which has a cylindrical third nonwoven fabric surrounding the protruding portion.

  The high-voltage part potting structure according to a fifth aspect of the present invention is the high-voltage part potting structure according to any one of the first to fourth aspects, wherein the chassis supports the transformer and the projecting portion facing each other.

  The high voltage part potting structure according to the invention of claim 6 is the one according to claim 5, wherein at least part of the cylinder made of the first nonwoven fabric is included in the cylinder made of the second nonwoven fabric.

  The high-voltage part potting structure according to the invention of claim 7 is the one according to any one of claims 1 to 6, wherein the cylinder made of the second nonwoven fabric is such that the substrate is arranged on the bottom surface.

  The high-voltage part potting structure according to the invention of claim 8 is a transformer, a cylindrical first nonwoven fabric surrounding the transformer, a substrate having a plurality of protruding portions on at least one surface, and the protruding portions of the substrate A cylindrical third nonwoven fabric surrounding the transformer, a chassis supporting the transformer and the substrate, the transformer including the first nonwoven fabric, and the substrate including the third nonwoven fabric are filled around the transformer and the substrate. And a potting material encapsulating.

  The high-voltage part potting structure according to the invention of claim 9 is the one according to any one of claims 1 to 8, wherein the potting material is a mixture of nonwoven fabric pieces mixed or kneaded.

  The high-voltage part potting structure according to the invention of claim 10 includes a transformer, a substrate having a plurality of projecting portions on at least one surface, a chassis supporting the transformer and the substrate, and a periphery of the transformer and the substrate. The potting material is filled and sealed with the transformer and the substrate, and the potting material is a mixture of non-woven fabric pieces or kneaded.

  The potting method of the high voltage part according to the invention of claim 11 includes a first nonwoven fabric layer forming step of winding a first nonwoven fabric around a transformer, or inserting the transformer into the tubular first nonwoven fabric. Wrapping the second nonwoven fabric around the side surface of the substrate having a plurality of protruding portions on at least one surface, and surrounding the protruding portion with the second nonwoven fabric, or inserting the substrate into the cylindrical second nonwoven fabric, The cylindrical second nonwoven fabric surrounds the side surface and the protruding portion of the substrate, and the second nonwoven fabric layer forming step of arranging the substrate on the bottom surface of the cylindrical second nonwoven fabric includes the first nonwoven fabric, A potting step of filling a potting material around the substrate including the transformer and the second nonwoven fabric, and sealing the transformer and the substrate.

  In the potting method of the high voltage portion according to the invention of claim 12, at least before the potting step, a third nonwoven fabric is wound around the protruding portion, or the protruding portion is formed into a cylindrical third nonwoven fabric. It is a thing of Claim 11 which has a 3rd nonwoven fabric layer formation process inserted.

  The high voltage portion potting method according to a thirteenth aspect of the present invention is the method according to claim 11 or 12, further comprising a supporting step of supporting the transformer and the substrate on a chassis before the potting step. .

  The potting method of the high voltage part according to the invention of claim 14 is a first nonwoven fabric layer forming step of winding a first nonwoven fabric around a transformer, or inserting the transformer into the tubular first nonwoven fabric. A third nonwoven fabric layer forming step of winding a third nonwoven fabric around the protruding portion of the substrate having a plurality of protruding portions on at least one surface, or inserting the protruding portion into the cylindrical third nonwoven fabric; And a potting step of filling a potting material around the transformer including the first nonwoven fabric and the substrate including the third nonwoven fabric, and sealing the transformer and the substrate. .

  The potting method of the high voltage portion according to the invention of claim 15 is the method according to any one of claims 11 to 14, wherein the potting step fills the potting material with a piece of nonwoven fabric mixed or kneaded. .

  A potting method for a high voltage portion according to the invention of claim 16 is a method of supporting a transformer and a substrate having a plurality of protrusions on at least one surface by a chassis, and a piece of nonwoven fabric around the transformer and the substrate. And a potting step of filling the potting material mixed or kneaded and sealing the transformer and the substrate.

  As described above, according to the first to third aspects of the present invention, even when a crack is generated in the potting material (potting material after curing), the first nonwoven fabric and the second nonwoven fabric propagate the crack to the transformer and the substrate. A high voltage part potting structure that can be prevented by the non-woven fabric can be obtained.

  According to the invention concerning Claim 4, in addition to the effect of Claims 1-3, the high voltage part potting structure which can prevent the progress of the crack to a projection part by the 3rd nonwoven fabric can be obtained.

  According to the fifth aspect of the present invention, in addition to the effects of the first to fourth aspects, a high-voltage part potting structure having a chassis that supports the transformer and the substrate without opening them can be obtained.

  According to the sixth aspect of the invention, in addition to the effect of the fifth aspect, it is possible to obtain a high voltage portion potting structure in which cracks hardly develop between the opposing transformer and the protruding portion (substrate).

  According to the invention according to claim 7, in addition to the effects of claims 1-6, the second nonwoven fabric can be almost eliminated on one surface (back surface) of the substrate, so the amount of the second nonwoven fabric used is small. A high voltage part potting structure can be obtained.

  According to the invention which concerns on Claim 8, even when a crack arises in a potting material (potting material after hardening), the progress of the crack to a transformer and a substrate can be prevented by the first nonwoven fabric and the third nonwoven fabric. A high voltage part potting structure can be obtained.

  According to the invention according to claim 9, in addition to the effects of claims 1 to 8, even if a crack occurs in the potting material (potting material after curing) due to the nonwoven fabric piece mixed or kneaded in the potting material, A high-voltage part potting structure that can prevent the development of cracks in the transformer and the substrate can be obtained.

  According to the invention of claim 10, even when a crack occurs in the potting material (potting material after curing), a high voltage portion potting structure is obtained that can prevent the progress of the crack to the transformer and the substrate by the nonwoven fabric piece. be able to.

  According to the eleventh aspect of the invention, even when a crack occurs in the potting material (particularly after hardening of the potting material), the progress of the crack to the transformer and the substrate is prevented by the first nonwoven fabric and the second nonwoven fabric. It is possible to obtain a potting method for a high voltage portion that can

  According to the twelfth aspect of the invention, in addition to the effect of the eleventh aspect, it is possible to obtain a high voltage portion potting method that can prevent the third nonwoven fabric from developing cracks to the protrusions.

  According to the thirteenth aspect of the invention, in addition to the effects of the eleventh and twelfth aspects, it is possible to obtain a potting method for a high voltage portion including a step of supporting the transformer and the substrate without opening the substrate.

  According to the invention of claim 14, even when a crack occurs in the potting material (particularly after hardening of the potting material), the progress of the crack to the transformer and the substrate is prevented by the first nonwoven fabric and the third nonwoven fabric. It is possible to obtain a potting method for a high voltage portion that can

  According to the invention of claim 15, in addition to the effects of claims 11 to 14, when the non-woven piece mixed or kneaded in the potting material causes cracks in the potting material (particularly after hardening of the potting material) However, it is possible to obtain a high voltage potting method that can prevent the development of cracks in the transformer and the substrate.

  According to the invention of claim 16, even when a crack occurs in the potting material (especially after hardening of the potting material), the non-woven fabric piece can prevent the crack from progressing to the transformer and the substrate. You can get the method.

It is a block diagram (after potting material hardening) of the high voltage circuit (example) which has the high voltage part potting structure which concerns on Embodiment 1 of this invention. It is a block diagram (after potting material hardening) of the high voltage circuit (reference structure) for comparing with the high voltage circuit (example) which has the high voltage part potting structure which concerns on Embodiment 1 of this invention. It is a block diagram (before "a 1st nonwoven fabric layer formation process, a 2nd nonwoven fabric layer formation process, a potting process") of the high voltage circuit (example) which has the high voltage part potting structure which concerns on Embodiment 1 of this invention. It is a block diagram (before "the 2nd nonwoven fabric layer formation process, potting process") of the high voltage circuit (example) which has the high voltage part potting structure which concerns on Embodiment 1 of this invention which concerns on Embodiment 1 of this invention . It is an enlarged view of the board | substrate and 2nd nonwoven fabric in the high voltage part potting structure which concerns on Embodiment 1 of this invention. It is an enlarged view of the board | substrate and 3rd nonwoven fabric in the high voltage part potting structure which concerns on Embodiment 1 of this invention. It is an enlarged view of the potting material in the high voltage part potting structure which concerns on Embodiment 1 of this invention.

Embodiment 1 FIG.
Embodiment 1 of the present invention will be described below with reference to FIGS. 1 (a), FIG. 2 (a), FIG. 3 (a), FIG. 4 (a), and (b) are perspective views of the longitudinal method of the high voltage circuit, and FIG. 1 (b), FIG. 2 (b), and FIG. FIG. 5 is a perspective view of a short method of a high voltage circuit, FIG. 5 is a view showing a state in which a nonwoven fabric is wound around the side surface of the substrate, and a protruding portion is surrounded by the nonwoven fabric, and FIG. The figure which shows the cylindrical nonwoven fabric (2nd nonwoven fabric) and a board | substrate, FIG.5 (b) is the cylinder by which the inner surface was each arrange | positioned facing the surface (one main surface) and the back surface (other main surface) of a board | substrate. It is a figure which shows a shape-like nonwoven fabric (2nd nonwoven fabric) and a board | substrate. 6A is a diagram showing a third nonwoven fabric and an electronic component covering (surrounding) an electronic component lead, and FIG. 6B is a diagram showing a third nonwoven fabric and the electronic component covering (surrounding) the electronic component. is there.

  1 to 7, 1 is a transformer, 1 a is a terminal which is a protruding portion of the transformer 1, 2 is a substrate having a plurality of protruding portions on at least one surface, and 2 a is an electronic component (component) which is a protruding portion of the substrate 2. 2aa is a lead of the electronic component (component) 2a, 2b is a protruding portion of the substrate 2, and is a terminal of the substrate 2. The electronic component 2 a and the terminal 2 b are mounted on the substrate 2. 3 is a cylindrical first nonwoven fabric that surrounds the transformer 1, 4 is a cylindrical second nonwoven fabric that surrounds the side surfaces and protrusions of the substrate 2, 5 is a chassis that supports the transformer 1 and the substrate 2, and 5a is a transformer that supports the transformer. The chassis 5b is a chassis that supports the substrate, and 5c is a frame that is the core of the chassis 5 (chassis 5a, chassis 5b). In the drawings, the same reference numerals denote the same or corresponding parts, and detailed descriptions thereof are omitted.

  1 to 7, reference numeral 6 denotes a potting material filled around the transformer 1 including the first nonwoven fabric 3 and the substrate 2 including the second nonwoven fabric 4 and sealing the transformer 1 and the substrate 2 (insulating resin is used). Preferred). The potting material 6 is set to seal a part of the high-pressure part of the transformer 1 (at least a part covered with the first nonwoven fabric 3). 7 is a cylindrical third nonwoven fabric surrounding the protruding portions (terminal 1a, electronic component 2a, terminal 2b, etc.), and 8 is a nonwoven fabric (first nonwoven fabric 3, second nonwoven fabric 4, third nonwoven fabric 7) of several square mm. It is a piece of non-woven fabric finely cut. In the drawings, the same reference numerals denote the same or corresponding parts, and detailed descriptions thereof are omitted.

  The first nonwoven fabric 3, the second nonwoven fabric 4, the third nonwoven fabric 7 and the nonwoven fabric piece 8 are preferably insulating. Further, the first nonwoven fabric 3, the second nonwoven fabric 4, the third nonwoven fabric 7, and the nonwoven fabric piece 8 have no fiber direction (very strong against tension) and can withstand the tensile stress of the resin (when the potting material 6 is cured). If it is a thing, the conventional nonwoven fabric may be sufficient (for example, refer patent document 4). Furthermore, the 1st nonwoven fabric 3, the 2nd nonwoven fabric 4, the 3rd nonwoven fabric 7, and the nonwoven fabric piece 8 are better as long as the resin which is the potting material 6 can be impregnated (penetrated).

  In the high voltage circuit having the high voltage portion potting structure shown in FIGS. 1A and 1B, the first nonwoven fabric 3 is wound around the transformer 1 and has a cylindrical shape surrounding the transformer 1. The first nonwoven fabric 3 serves as a cushioning material, and cracks are less likely to occur at the corners of the transformer 1 and around the terminals 1a after the potting material 6 is cured. Moreover, even when a crack occurs, the first nonwoven fabric 3 can suppress the extension / progress (wire transmission) of the crack. The 1st nonwoven fabric 3 can also suppress not only the crack of such a cylindrical inner surface side (inside) but also the extension / progress (wire transmission) of the crack from the cylindrical outer surface side (outside). Furthermore, if at least either the potting material 6 or the first nonwoven fabric 3 is insulative, the first nonwoven fabric 3 functions as an insulating layer.

  Similarly, the high voltage circuit having the high voltage portion potting structure shown in FIGS. 1A and 1B has a cylindrical shape in which the second nonwoven fabric 4 is wound around the side surface of the substrate 2 and surrounds the electronic component 2a and the terminal 2b. For this reason, the second nonwoven fabric 4 serves as a cushioning material, and after the potting material 6 is cured, cracks are unlikely to occur in the vicinity of the electronic component 2a and the terminal 2b, which are protruding portions of the substrate 2. Further, even when a crack occurs, the second nonwoven fabric 4 can suppress crack extension / progress (wire transmission). The 2nd nonwoven fabric 4 can also suppress not only the crack of such a cylindrical inner surface side (inside) but the extension and progress (wire transmission) of the crack from the cylindrical outer surface side (outside). Furthermore, if at least either the potting material 6 or the first nonwoven fabric 3 is insulative, the first nonwoven fabric 3 functions as an insulating layer.

  The first nonwoven fabric 3 and the second nonwoven fabric 4 in the high voltage circuit having the high voltage part potting structure shown in FIGS. You may make it plug. That is, even in a state where the transformer 1 is inserted into the cylindrical first nonwoven fabric 3 and a substrate is inserted into the cylindrical second nonwoven fabric 4 so as to surround the side surface of the substrate 2, the electronic component 2a, and the terminal 2b. Good. Moreover, it arrange | positions so that at least one part of the cylinder by the 1st nonwoven fabric 3 may include in the inside of the cylinder by the 2nd nonwoven fabric 4 (in other words, a cylindrical 1st nonwoven fabric to the opening of the cylindrical 2nd nonwoven fabric 4) 3 can be said to be inserted), the opening portions of the cylindrical first nonwoven fabric 3 and the cylindrical second nonwoven fabric 4 are reduced, and the resistance to cracking is increased. This can be easily achieved by the chassis 5 supporting the transformer 1 and the protruding portions of the substrate 2 (electronic component 2a and terminal 2b) facing each other.

  Next, FIGS. 2A and 2B are used to explain the effect of the high voltage portion potting structure according to the first embodiment. FIG. 2 is a configuration diagram of a high voltage circuit (reference configuration) for comparison with a high voltage circuit (example) having a high voltage portion potting structure according to the first embodiment. The first nonwoven fabric 3 and the second nonwoven fabric 4 as in the voltage part potting structure are not in the potting material 6. In other words, FIG. 2 can be said to be an example of the occurrence of cracks when the potting material 6 is filled up to the upper surface of the chassis 5 (case, frame 5c). When potting is performed in a state where the first nonwoven fabric 3 and the second nonwoven fabric 4 are not present, cracks are likely to occur starting from the locations between the transformer 1 and the chassis 5 and around the electronic components 2a, terminals 2b, and terminals 1a. In addition, cracks are likely to occur starting from the wall surface (chassis 5 or the like) (the portion described as “crack” in FIG. 2 simulates the actually generated crack).

  In the case of the potting material 6 that condenses at the time of curing, the tensile stress becomes strong in the portion where the resin is large, and a gap is formed between the wall surface (chassis 5 and the like), and the wall surface and components (the transformer 1 and the substrate 2 itself and the transformer 1 and the protrusion including the protruding portion of the substrate 2, this time, the resin-centered portion is torn and becomes an internal crack. Further, when the potting material 6 is made of silicon resin, the interface 1 is easily peeled off from the protruding portion such as the terminal 1a of the transformer 1 or the corner of the electronic component 2a. And stress concentrates from the peeled part as a starting point, and a crack is transmitted.

  On the other hand, in the high voltage circuit having the high voltage portion potting structure shown in FIG. 1, the above-described crack countermeasures are taken as described above. Since the potting operation is performed by inserting the first nonwoven fabric 3 and the second nonwoven fabric 4, the generation and progress of cracks starting from between the transformer 1 and the chassis 5 and around the electronic components 2a, terminals 2b, and terminals 1a are suppressed. I can do things. In addition, the generation and progress of cracks starting from the wall surface (chassis 5 or the like) can be suppressed. This is because the first non-woven fabric 3 and the second non-woven fabric 4 have no fiber direction and are very resistant to pulling, and therefore can withstand the tensile stress of the resin (potting material 6).

  Further, in the high voltage circuit having the high voltage part potting structure shown in FIG. 1, it is possible to avoid stress concentration of the resin by inserting the first nonwoven fabric 3 and the second nonwoven fabric 4 so as to partition the resin (potting material 6). it can. By putting the first nonwoven fabric 3 between the transformer 1 and the chassis 5 (5a), cracks are prevented from developing between the transformer 1 and the chassis 5 (5a) to cause insulation failure (crack progress preventing function). The first nonwoven fabric 3 and the second nonwoven fabric 4 can form an insulating layer (insulating layer generation) because the resin (potting material 6) penetrates to the back of the fiber.

  In the potting method described in Patent Document 1, it is necessary to remove the sheet attached around the terminal portion. However, in the high voltage portion potting structure according to Embodiment 1, the first nonwoven fabric 3 and the second nonwoven fabric are directly applied to the potting material 6. Since the non-woven fabric 4 may be buried and removal is unnecessary, workability and economy are high. Insulators that are easy to process such as mylar sheets that are conventionally used to be folded and bent are expensive, but non-woven fabrics are inexpensive and easy to process. Generally, when a high voltage circuit such as the transformer 1 is realized in a space-saving manner, a work called potting is performed in which a resin insulator is filled between the circuits to ensure a withstand voltage. In this potting, an insulator is filled so that cracks and bubbles do not enter in a vacuum state. However, if there are cracks or bubbles as described above, arc discharge due to poor insulation is caused. Depending on the type of resin, shrinkage (condensation) may occur in the process of curing the insulator, and the insulator may crack due to tensile stress or the like.

  In the past, cracks were prevented by preventing stress from developing or developing by releasing stress or devising the internal structure of the high-voltage circuit (chassis) to make it easier for bubbles to escape. There were many cases where sufficient stress relief and air vent holes could not be or could not be provided due to circuit structural limitations.

  For example, as shown in FIG. 2, when the chassis 5 is supported by the transformer 1 and the protruding portion (electronic component 2 a and terminal 2 b) of the substrate 2 facing each other, that is, the upper surface of the chassis 5 is opened. There are cases where it is impossible or when it is difficult to provide a large air vent. However, in the high voltage part potting structure according to the first embodiment, even in such a case, the first nonwoven fabric 3 and the second nonwoven fabric 4 are present in the potting material 6, and thus the first nonwoven fabric 3 described above. And the crack progress can be prevented from the crack progress preventing function by the second nonwoven fabric 4.

  Next, using FIG. 3, FIG. 4 and FIG. 5, a high voltage portion potting method for obtaining the high voltage portion potting structure according to the first embodiment (hereinafter simply referred to as “high voltage portion according to the first embodiment”). Will be described. In the drawings, the same reference numerals denote the same or corresponding parts, and detailed descriptions thereof are omitted.

  FIGS. 3A and 3B show the high-voltage circuit after performing a supporting process for supporting (attaching) the transformer 1 and the substrate 2 to the chassis. The details of the supporting process are a process of attaching the transformer 1 to the chassis 5a and attaching the substrate 2 to the chassis 5b. This supporting step may be performed at least before the potting step among the first nonwoven fabric layer forming step, the second nonwoven fabric layer forming step (third nonwoven fabric layer forming step), and the potting step described later.

  Fig.4 (a) has shown the high voltage circuit which performed the 1st nonwoven fabric layer formation process. Specifically, the first nonwoven fabric layer forming step is a step of winding the first nonwoven fabric around the transformer 1. The first nonwoven fabric layer forming step may be a step of inserting the transformer 1 into the cylindrical first nonwoven fabric 3. In this case, it is desirable to use the cylindrical first nonwoven fabric 3 from the beginning. In the first nonwoven fabric layer forming step, the order of execution with the second nonwoven fabric layer forming step described later is not particularly limited, but after the supporting step, the first nonwoven fabric layer forming step and the second nonwoven fabric layer forming step are executed, and As shown in FIG. 4 (FIGS. 3 and 1), in the case where the chassis 5 has a structure in which the transformer 1 and the protruding portion of the substrate 2 are opposed to each other, the first nonwoven fabric 3 is formed inside the cylinder of the second nonwoven fabric 4. When at least a part of the cylinder is included, it is better to execute the first nonwoven fabric layer forming step first.

  FIG.4 (b) has shown the high voltage circuit which gave the 2nd nonwoven fabric layer formation process after the 1st nonwoven fabric layer formation process. Specifically, the second nonwoven fabric layer forming step is a step in which the second nonwoven fabric 4 is wound around the side surface of the substrate 2 and the protruding portions (the electronic component 2a and the terminal 2b) are surrounded by the second nonwoven fabric 4. Further, in the second nonwoven fabric layer forming step, the substrate 2 is inserted into the cylindrical second nonwoven fabric 4, and the cylindrical second nonwoven fabric 4 surrounds the side surface and the protruding portion (the electronic component 2a and the terminal 2b) of the substrate 2, The step of disposing the substrate 2 on the bottom surface of the cylindrical second nonwoven fabric 4 (FIG. 5A illustrates this state) may be used. In this case, it is desirable to use the cylindrical second nonwoven fabric 4 from the beginning. 5A, all four side surfaces of the substrate 2 are covered with the second nonwoven fabric 4, but as shown in FIG. 5B, the two side surfaces of the substrate 2 are covered with the second nonwoven fabric 4. Also good.

  In this case (as shown in FIG. 5 (b)), the second nonwoven fabric layer forming step wraps the second nonwoven fabric 4 around the side surface of the substrate 2, and places the protruding portions (electronic parts 2a and terminals 2b) around the second nonwoven fabric 4. It is also a step of surrounding, and the substrate 2 is inserted into the cylindrical second nonwoven fabric 4, and the cylindrical second nonwoven fabric 4 surrounds the side surface and the protruding portion (electronic component 2 a and terminal 2 b) of the substrate 2, 2 It can be said that this is also a step of making the front surface and the back surface of the substrate 2 face the inner surface of the nonwoven fabric 4.

  In FIG. 5A, the second nonwoven fabric 4 is in contact with the corner portion of the substrate 2 and is not in contact with the side surface of the substrate 2, but the second nonwoven fabric 4 may be in contact with the side surface of the substrate 2. In FIG. 5 (b), the second nonwoven fabric 4 is in contact with the side surface of the substrate 2 and is not in contact with the front surface and the back surface of the substrate 2. However, the second nonwoven fabric 4 and at least one of the front surface and the back surface of the substrate 2 are You may make it contact. In addition, when making the 2nd nonwoven fabric 4 and the surface of the board | substrate 2 contact, the electronic component 2a and the 2nd nonwoven fabric 4 which are illustrated in the terminal 2b or FIG.5 (b) will contact, and a 2nd nonwoven fabric will be contacted. 4 can be swollen by the electronic component 2a and the terminal 2b. Therefore, it can be said that the second nonwoven fabric 4 has a cylindrical shape surrounding the protruding portion of the substrate 2. In this case, it can be said that the second nonwoven fabric 4 has the same function as the third nonwoven fabric 7 which will be described in detail later, so the second nonwoven fabric layer forming step can also be said to be a third nonwoven fabric layer forming step.

  A potting process is performed after a 1st nonwoven fabric layer formation process and a 2nd nonwoven fabric layer formation process (3rd nonwoven fabric layer formation process). The potting step is a step of filling the potting material 6 around the substrate 2 including the transformer 1 including the first nonwoven fabric 3 and the second nonwoven fabric 4 (third nonwoven fabric 7), and sealing the transformer 1 and the substrate 2. The method of potting (resin potting) itself is the same as the conventional technique. After the potting material 6 is cured through the potting process, the high voltage portion potting structure (according to the high voltage circuit) according to the first embodiment is obtained.

  FIG. 6 shows a cylindrical third nonwoven fabric 7 surrounding the protruding portion of the substrate 2. The case where the 3rd nonwoven fabric 7 is applied to the high voltage part potting structure which concerns on Embodiment 1 (the method of high voltage part potting which concerns on Embodiment 1) is demonstrated using this FIG. The third non-woven fabric 7 shown in FIG. 6A is a cylinder that is wound around the lead 2aa of the electronic component 2a that is the protruding portion of the substrate 2 and surrounds the lead 2aa. Or it is the cylindrical 3rd nonwoven fabric 7 in which lead 2aa is inserted and surrounds lead 2aa. In the latter case, it is desirable to use the cylindrical third nonwoven fabric 7 from the beginning.

  The third nonwoven fabric 7 shown in FIG. 6B is a cylindrical one wound around the electronic component 2a and the lead 2aa and surrounding the electronic component 2a and the lead 2aa. Or it is the cylindrical 3rd nonwoven fabric 7 in which the electronic component 2a and the lead 2aa are inserted and surrounds the electronic component 2a and the lead 2aa.

  The high voltage part potting structure according to Embodiment 1 may include the third nonwoven fabric 7 in addition to the first nonwoven fabric 3 and the second nonwoven fabric 4 described above, or the third nonwoven fabric 7 instead of the second nonwoven fabric 4. It may have. This also includes the case where the second nonwoven fabric 4 has the function of the third nonwoven fabric 7.

  Further, in the potting method of the high voltage portion according to the first embodiment, at least before the potting step, around the protruding portion (the lead 2aa or the electronic component 2a and the lead 2aa) which is the third nonwoven fabric layer forming step. A step of winding the third nonwoven fabric 7 or inserting the protruding portion (the lead 2aa or the electronic component 2a and the lead 2aa) into the cylindrical third nonwoven fabric 7 may be performed. Of course, the high voltage part potting method according to the first embodiment may include a third nonwoven fabric layer forming step in addition to the first nonwoven fabric layer forming step and the second nonwoven fabric layer forming step, and the second nonwoven fabric layer. It may replace with a layer formation process and may have a 3rd nonwoven fabric layer formation process.

  That is, by winding the third non-woven fabric 7 around a protrusion such as the tip of the protrusion, it is possible to stop peeling and cracking starting from the protrusion. In particular, the lead 2aa portion has low friction and the resin (potting material 6) is likely to be peeled off at the interface, but the progress of the crack can be prevented by winding the third nonwoven fabric 7. The target for forming the third nonwoven fabric 7 is not only the lead 2aa or the electronic component 2a and the lead 2aa, but also the terminal 1a and the terminal 2b. The formation method is also the same.

  In the high-voltage part potting structure according to the first embodiment (the high-voltage part potting method according to the first embodiment), the vertical direction and the partition between the transformer 1 and the chassis 5 and between the transformer 1 and the substrate 2 are respectively You may insert a sheet-like nonwoven fabric (1st nonwoven fabric 3, 2nd nonwoven fabric 4, 3rd nonwoven fabric 7) so that a horizontal direction or the circumference | surroundings may be enclosed. In the high voltage part potting structure according to the first embodiment (the high voltage part potting method according to the first embodiment), the first non-woven fabric 3, the second non-woven fabric 4, and the third non-woven fabric 7 are already tubed from the original shape. However, this also includes a hat shape in which an opening on one side is sealed.

  FIG. 7 shows the non-woven fabric piece 8 mixed or kneaded in the potting material 6. In the high-voltage part potting structure according to the first embodiment described so far with reference to FIG. 7 (potting method of the high-voltage part according to the first embodiment), the potting material into which the nonwoven fabric piece 8 is mixed or kneaded The case where 6 is used will be described.

  As shown in FIG. 7, by using a potting material 6 mixed or kneaded with non-woven fabric pieces 8 and filling the potting material 6 with non-woven fabric pieces 8 mixed or kneaded in the potting process, In addition to the crack progression prevention function and arc discharge prevention function (insulation function) by the first nonwoven fabric 3 and the second nonwoven fabric 4 (third nonwoven fabric 7), the crack crack progression prevention function and arc discharge prevention function (insulation function) by the nonwoven fabric piece 8 Therefore, the high-voltage part potting structure according to the first embodiment (the high-voltage part potting method according to the first embodiment) can provide a higher-performance high-voltage circuit. The non-woven fabric piece 8 can also suppress the development (transmission) of cracks generated from a position away from the first non-woven fabric 3 and the second non-woven fabric 4 (third non-woven fabric 7).

  In the high voltage portion potting structure according to the first embodiment (the high voltage portion potting method according to the first embodiment), the first nonwoven fabric 3 and the second nonwoven fabric 4 (third nonwoven fabric 7) are not used, but the nonwoven fabric. Only the piece 8 may be used to impart a crack progress preventing function or an arc discharge preventing function (insulating function) to the high voltage circuit. In this case, the high-voltage part potting structure includes a transformer 1 and a substrate 2 supported by the chassis 5 and a potting material 6 (mixed or kneaded with a nonwoven fabric piece) that seals the transformer 1 and the substrate 2 around the transformer 1 and the substrate 2. I can say that. Moreover, the potting method of a high voltage part is the potting which fills the surroundings of the transformer 1 and the board | substrate 2 with the potting material 6 in which the nonwoven fabric piece 8 was mixed or kneaded after the support process, and seals the transformer 1 and the board | substrate 2. It can be said that the process is executed.

  Summarizing the high-voltage part potting structure according to the first embodiment (the high-voltage part potting method according to the first embodiment), the non-woven fabric is embedded in the resin in the high-voltage circuit that performs insulation by resin potting. It can be said that the insulation deterioration is prevented. Non-woven fabric (first non-woven fabric 3 and second non-woven fabric 4) using the high-voltage section potting structure according to the first embodiment (the high-voltage section potting method according to the first embodiment) in the high-voltage circuit that performs insulation by resin potting. , When the third nonwoven fabric 7) is buried in the resin to arrange the nonwoven fabric when preventing insulation deterioration, the following 1 to 4 are obtained.

1. Between the transformer 1 and the chassis 5 and between the transformer 1 and the substrate 2, a sheet-like or tubular nonwoven fabric (first nonwoven fabric 3, second nonwoven fabric 4 so as to surround the vertical direction, the horizontal direction, or the periphery, respectively. The third nonwoven fabric 7) is inserted.
2. A non-woven fabric (first non-woven fabric 3, second non-woven fabric 4, third non-woven fabric 7) is wound around the lead 2aa (terminal 1a or terminal 2a) of the electrical component 2a.
3. Put the non-woven fabric (first non-woven fabric 3, second non-woven fabric 4, third non-woven fabric 7) on the tip of the protruding portion (terminal 1a, electrical component 2a, terminal 2b).
4. A non-woven fabric (which may have the same structure as the first non-woven fabric 3, the second non-woven fabric 4 and the third non-woven fabric 7) is cut into several square mm and mixed into the resin as a non-woven fabric piece 8.

  Therefore, the high voltage part potting structure according to the first embodiment is filled around the transformer 1, the substrate 2, the chassis 5 that supports the transformer 1 and the substrate 2, and the transformer 1 and the substrate 2. 2 and a potting material 6 in which a non-woven fabric (any one of the first non-woven fabric 3, the second non-woven fabric 4, the third non-woven fabric 7, and the non-woven fabric piece 8) is sealed.

  Similarly, the potting method of the high voltage part according to the first embodiment includes a supporting step of supporting the transformer 1 and the substrate 2 on the chassis 5, filling the potting material 6 around the transformer 1 and the substrate 2, and the transformer 1 And a potting process for sealing the substrate 2 and the nonwoven fabric (any of the first nonwoven fabric 3, the second nonwoven fabric 4, the third nonwoven fabric 7, and the nonwoven fabric piece 8).

  In the high voltage part potting structure according to the first embodiment, the chassis 5 may have either the transformer 1 or the substrate 2. In this case, the supporting step of the high voltage portion potting method according to the first embodiment is a step of supporting at least one of the transformer 1 and the substrate 2. When the chassis 5 supports only the transformer 1, at least one of the first nonwoven fabric 3 (for the transformer 1) or the third nonwoven fabric 7 (for the terminal 1 a) may be formed on the transformer 1. In this case, there is no second nonwoven fabric forming step. Similarly, when the chassis 5 supports only the substrate 2, at least one of the second nonwoven fabric 4 (for the substrate 2) or the third nonwoven fabric 7 (for the electronic component 2a, the terminal 2a, and the lead 2aa) is formed on the substrate 2. It only has to be. In this case, there is no 1st nonwoven fabric formation process.

  In such a case, the potting process can be said to be a process of filling the potting material 6 around the transformer 1 or the substrate 2 and sealing the transformer 1 or the substrate 2. In addition, the third nonwoven fabric layer forming step includes winding the third nonwoven fabric 7 around the protruding portion (at least one of the terminal 1a, the electronic component 2a, the terminal 2a, and the lead 2aa) or the protruding portion (the terminal 1a, the electronic component). It can be said that this is a process of inserting at least one of the component 2a, the terminal 2a, and the lead 2aa into the cylindrical third nonwoven fabric 7.

  Furthermore, in the case where the chassis 5 has either the transformer 1 or the substrate 2, even if none of the first nonwoven fabric 3, the second nonwoven fabric 4 and the third nonwoven fabric 7 has the high voltage portion potting structure, If the nonwoven fabric piece 8 is mixed or kneaded in the potting material 6, the high voltage part potting structure according to the first embodiment can be configured. In this case, the supporting step of the potting method of the high voltage portion according to the first embodiment includes the supporting step of supporting either the transformer 1 or the substrate 2 on the chassis, and the nonwoven fabric piece 8 mixed around the transformer 1 or the substrate 2. Alternatively, it can be said that a potting step of filling the kneaded potting material 6 and sealing the transformer 1 or the substrate 2 is provided.

1..Transformer, 1a..Terminal (protruding part), 2..Board, 2a..Electronic component (protruding part), 2aa..Lead, 2b..Terminal (protruding part), 3..First nonwoven fabric, 4 .. Second nonwoven fabric 5 .. Chassis 5a. Chassis (transformer 1 chassis), 5 b. Chassis (substrate 2 chassis), 5 c. Chassis (frame), 6. .. Third nonwoven fabric, 8 ... Nonwoven fabric piece.

Claims (16)

  A transformer, a cylindrical first nonwoven fabric surrounding the transformer, a substrate having a plurality of protruding portions on at least one surface, a cylindrical second nonwoven fabric surrounding the side surface of the substrate and the protruding portions, A high voltage comprising a transformer and a chassis supporting the substrate, and a potting material filled around the substrate including the first nonwoven fabric and the transformer including the second nonwoven fabric and sealing the transformer and the substrate. Part potting structure.   A transformer, a cylindrical first nonwoven fabric wound around the transformer and surrounding the transformer, a substrate having a plurality of protruding portions on at least one surface, and wound on the side surface of the substrate, A surrounding cylindrical second nonwoven fabric, a chassis for supporting the transformer and the substrate, the transformer including the first nonwoven fabric, and the substrate including the second nonwoven fabric are filled around the transformer and the substrate. High voltage potting structure with sealed potting material.   A transformer, a cylindrical first nonwoven fabric into which the transformer is inserted, a substrate having a plurality of protrusions on at least one surface, and a cylinder in which the substrate is inserted and surrounds the side surface of the substrate and the protrusions A second non-woven fabric having a shape, a chassis supporting the transformer and the substrate, the transformer including the first non-woven fabric and the substrate including the second non-woven fabric are filled, and the transformer and the substrate are sealed. High voltage potting structure with potting material.   The high voltage part potting structure in any one of Claims 1-3 which has the cylindrical 3rd nonwoven fabric surrounding the said projection part.   The high-voltage part potting structure according to any one of claims 1 to 4, wherein the chassis supports the transformer and the protruding portion so as to face each other.   The high-voltage part potting structure according to claim 5, wherein at least a part of the cylinder made of the first nonwoven fabric is included inside the cylinder made of the second nonwoven fabric.   The high-voltage part potting structure according to any one of claims 1 to 6, wherein the cylinder made of the second nonwoven fabric has the substrate disposed on the bottom surface.   A transformer, a cylindrical first nonwoven fabric surrounding the transformer, a substrate having a plurality of protruding portions on at least one surface, a cylindrical third nonwoven fabric surrounding the protruding portions of the substrate, the transformer, and Potting of high voltage section comprising a chassis for supporting the substrate, and a potting material filled around the substrate including the first nonwoven fabric and the third nonwoven fabric and sealing the transformer and the substrate. Construction.   The high voltage part potting structure according to any one of claims 1 to 8, wherein the potting material is a mixture of nonwoven fabric pieces or kneaded.   A transformer, a substrate having a plurality of projecting portions on at least one surface, a chassis supporting the transformer and the substrate, a potting material filled around the transformer and the substrate, and sealing the transformer and the substrate And the potting material is a high voltage portion potting structure in which a piece of nonwoven fabric is mixed or kneaded.   The first nonwoven fabric is wound around the transformer, or the transformer is inserted into the tubular first nonwoven fabric. The first nonwoven fabric layer forming step, and the side surface of the substrate having a plurality of protruding portions on at least one surface A second nonwoven fabric is wound and the protruding portion is surrounded by the second nonwoven fabric, or the substrate is inserted into the cylindrical second nonwoven fabric, and the cylindrical second nonwoven fabric is formed on the side surface of the substrate and the protrusion. A second non-woven fabric layer forming step of surrounding the portion and disposing the substrate on the bottom surface of the cylindrical second non-woven fabric; a transformer including the first non-woven fabric; and a potting material around the substrate including the second non-woven fabric And potting step of sealing the transformer and the substrate.   At least the third nonwoven fabric layer forming step of winding the third nonwoven fabric around the protruding portion or inserting the protruding portion into the cylindrical third nonwoven fabric at least before the potting step. The high voltage part potting method described.   13. The potting method for a high voltage part according to claim 11 or 12, further comprising a supporting step of supporting the transformer and the substrate on a chassis before the potting step.   A first nonwoven fabric layer forming step of winding a first nonwoven fabric around a transformer, or inserting the transformer into the tubular first nonwoven fabric, and the projection of the substrate having a plurality of projection portions on at least one surface A third nonwoven fabric layer forming step of winding a third nonwoven fabric around the portion, or inserting the protruding portion into the cylindrical third nonwoven fabric, and the transformer and the third nonwoven fabric including the first nonwoven fabric. A potting method of a high voltage section comprising a potting step of filling a potting material around the substrate and sealing the transformer and the substrate.   15. The potting method for a high voltage part according to any one of claims 11 to 14, wherein the potting step fills the potting material with a nonwoven fabric piece mixed or kneaded.   A supporting step of supporting a transformer and a substrate having a plurality of protrusions on at least one surface by a chassis; and filling the potting material mixed or kneaded with a non-woven fabric piece around the transformer and the substrate; A potting method for a high voltage portion, comprising a potting step for sealing the substrate.

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