JP2013229292A5 - - Google Patents
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- JP2013229292A5 JP2013229292A5 JP2012277619A JP2012277619A JP2013229292A5 JP 2013229292 A5 JP2013229292 A5 JP 2013229292A5 JP 2012277619 A JP2012277619 A JP 2012277619A JP 2012277619 A JP2012277619 A JP 2012277619A JP 2013229292 A5 JP2013229292 A5 JP 2013229292A5
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- 239000010410 layer Substances 0.000 claims description 136
- 239000000463 material Substances 0.000 claims description 29
- 239000012044 organic layer Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 230000002093 peripheral Effects 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000005755 formation reaction Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 9
- 239000011777 magnesium Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910000882 Ca alloy Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N Indium(III) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910019015 Mg-Ag Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N Tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- -1 magnesium - calcium Chemical compound 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- 229910005555 GaZnO Inorganic materials 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910000941 alkaline earth metal alloy Inorganic materials 0.000 description 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Description
このような問題を解決するために、第１電極が形成された絶縁層上に第２電極に接続された補助電極（補助配線）を形成する技術が、例えば、特開２００２−３１８５５６に開示されている。ここで、補助電極は、第１電極と同じ材料から構成されている。この特許公開公報に開示された技術において、第１電極及び補助電極を例えばアルミニウム（Ａｌ）やＡｌ合金から構成した場合、有機ＥＬ表示装置の製造工程において補助電極の表面が酸化され易い。そして、補助電極が酸化されると、第２電極の一部（第２電極延在部）を補助電極上に形成したとき、補助電極と第２電極との間の接触抵抗が増加する結果、電圧降下が生じる。そして、この電圧降下の増加に起因して、表示装置の消費電力が増加してしまう。 To solve such problems, a technique of forming a connected auxiliary electrode to the second electrode (auxiliary wiring) to the first electrode is formed the insulating layer is, for example, JP 2002 - disclosed in 318556 ing. Here, the auxiliary electrode is made of the same material as the first electrode. In the technique disclosed in this patent publication, when the first electrode and the auxiliary electrode are made of, for example, aluminum (Al) or an Al alloy, the surface of the auxiliary electrode is easily oxidized in the manufacturing process of the organic EL display device. When the auxiliary electrode is oxidized, when a part of the second electrode (second electrode extension portion) is formed on the auxiliary electrode, the contact resistance between the auxiliary electrode and the second electrode increases. A voltage drop occurs. And the power consumption of a display apparatus will increase due to this increase in voltage drop.
更には、以上に説明した好ましい形態を含む本開示の表示装置等において、表示装置の表示領域の縁部に位置する補助電極層の部分は、表示装置の周辺部に設けられた給電部に、基体上に形成されたコンタクト部、及び、コンタクト部から延びる配線層を介して接続されている形態とすることができる。 Furthermore, in the display device and the like of the present disclosure including the preferred embodiment described above, the portion of the auxiliary electrode layer located at the edge of the display region of the display device is in a power supply unit provided in the peripheral portion of the display device. It can be set as the form connected through the contact part formed on the base | substrate, and the wiring layer extended from a contact part.
一方、上面発光型の表示装置における第２電極、あるいは又、下面発光型の表示装置における第１電極（これらの電極を、便宜上、『半光透過電極』と呼ぶ場合がある）を構成する材料（半光透過材料あるいは光透過材料）として、半光透過電極をカソード電極として機能させる場合、発光光を透過し、しかも、有機層に対して電子を効率的に注入できるように仕事関数の値の小さな導電材料から構成することが望ましく、例えば、アルミニウム（Ａｌ）、銀（Ａｇ）、マグネシウム（Ｍｇ）、カルシウム（Ｃａ）、ナトリウム（Ｎａ）、ストロンチウム（Ｓｒ）、銅（Ｃｕ）、アルカリ金属又はアルカリ土類金属と銀（Ａｇ）との合金［例えば、マグネシウム（Ｍｇ）と銀（Ａｇ）との合金（Ｍｇ−Ａｇ合金）］、マグネシウム−カルシウムとの合金（Ｍｇ−Ｃａ合金）、アルミニウム（Ａｌ）とリチウム（Ｌｉ）の合金（Ａｌ−Ｌｉ合金）等の仕事関数の小さい金属あるいは合金を挙げることができ、中でも、Ｍｇ−Ａｇ合金が好ましく、マグネシウムと銀との体積比として、Ｍｇ：Ａｇ＝５：１〜３０：１を例示することができる。あるいは又、マグネシウムとカルシウムとの体積比として、Ｍｇ：Ｃａ＝２：１〜１０：１を例示することができる。半光透過電極の厚さとして、４ｎｍ乃至５０ｎｍ、好ましくは、４ｎｍ乃至２０ｎｍ、より好ましくは６ｎｍ乃至１２ｎｍを例示することができる。あるいは又、半光透過電極を、透明導電性酸化物、より具体的には、例えば、酸化亜鉛（ＺｎＯ）、酸化アルミニウム・ドープの酸化亜鉛（ＡＺＯ）、ガリウム・ドープの酸化亜鉛（ＧＺＯ）、Ｉｎ−ＧａＺｎＯ4（ＩＧＺＯ）、インジウム−亜鉛複合酸化物（ＩＺＯ）、Ｆドープの酸化亜鉛（ＦＺＯ）を含む酸化亜鉛系材料；酸化インジウム（Ｉｎ2Ｏ3）、ＳｎドープのＩｎ2Ｏ3（ＩＴＯ）、フッ素ドープＳｎＯ2（ＦＴＯ）を含む酸化インジウム系材料；酸化錫（ＳｎＯ2）、アンチモンドープのＳｎＯ2（ＡＴＯ）、ＦドープのＳｎＯ2（ＦＴＯ）を含む酸化錫系材料から構成することもできる。あるいは又、半光透過電極を、有機層側から、上述した導電材料から成る第１層と、上述した透明導電性酸化物から成る第２層（例えば、厚さ３×１０-8ｍ乃至１×１０-6ｍ）との積層構造とすることもできる。積層構造とした場合、第１層の厚さを１ｎｍ乃至４ｎｍと薄くすることもできる。 On the other hand, the material constituting the second electrode in the top emission type display device or the first electrode in the bottom emission type display device (these electrodes may be referred to as “semi-transmissive electrodes” for convenience) When a semi-light transmissive electrode is made to function as a cathode electrode (semi-light transmissive material or light transmissive material), a work function value is set so that light can be transmitted and electrons can be efficiently injected into the organic layer. For example, aluminum (Al), silver (Ag), magnesium (Mg), calcium (Ca), sodium (Na), strontium (Sr), copper (Cu), alkali metal or alloys of alkaline earth metals and silver (Ag) [e.g., an alloy of magnesium (Mg) and silver (Ag) (Mg-Ag alloy), magnesium - calcium Alloys (Mg—Ca alloys), aluminum (Al) and lithium (Li) alloys (Al—Li alloys) and other metals or alloys having a low work function, among which Mg—Ag alloys are preferred. Examples of the volume ratio of magnesium to silver include Mg: Ag = 5: 1 to 30: 1. Alternatively, Mg: Ca = 2: 1 to 10: 1 can be exemplified as the volume ratio of magnesium and calcium. Examples of the thickness of the semi-transmissive electrode include 4 nm to 50 nm, preferably 4 nm to 20 nm, and more preferably 6 nm to 12 nm. Alternatively, the translucent electrode is made of a transparent conductive oxide, more specifically, for example, zinc oxide (ZnO), aluminum oxide-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), Zinc oxide materials including In—GaZnO 4 (IGZO), indium-zinc composite oxide (IZO), F-doped zinc oxide (FZO); indium oxide (In 2 O 3 ), Sn-doped In 2 O 3 ( ITO), an indium oxide-based material containing fluorine-doped SnO 2 (FTO); a tin oxide-based material containing tin oxide (SnO 2 ), antimony-doped SnO 2 (ATO), and F-doped SnO 2 (FTO) You can also. Alternatively, the semi-transparent electrode is formed from the organic layer side by the first layer made of the above-described conductive material and the second layer made of the above-mentioned transparent conductive oxide (for example, a thickness of 3 × 10 −8 m to 1 A laminated structure with × 10 −6 m) can also be used. In the case of a stacked structure, the thickness of the first layer can be reduced to 1 nm to 4 nm.
表示装置１０の表示領域１０’の縁部に位置する補助電極層８１の部分は、表示装置１０の周辺部１０”に設けられた給電部（図１、図３、図４には図示せず）に、基体（第１基板）２１上に形成されたコンタクト部７１、及び、コンタクト部７１から延びる配線層（図１、図３、図４には図示せず）を介して接続されている。そして、給電部から配線層を介して、更には、補助電極層８１、コンタクト部７１を介して、第２電極６２に電圧が印加される。給電部、配線層、補助電極層８１、コンタクト部７１は、図２Ａ及び図２Ｂに示した第２電源ライン１５に含まれる。 The portion of the auxiliary electrode layer 81 located at the edge of the display area 10 ′ of the display device 10 is a power feeding portion (not shown in FIGS. 1, 3, and 4) provided in the peripheral portion 10 ″ of the display device 10. ) Through a contact portion 71 formed on the substrate (first substrate) 21 and a wiring layer (not shown in FIGS. 1, 3 and 4) extending from the contact portion 71. Then, a voltage is applied to the second electrode 62 from the power feeding unit through the wiring layer, and further through the auxiliary electrode layer 81 and the contact unit 71. The power feeding unit, the wiring layer, the auxiliary electrode layer 81, and the contact. The unit 71 is included in the second power supply line 15 shown in FIGS. 2A and 2B.
発光部６０を構成する第１電極６１及び有機層６３は、第１絶縁層４１上に形成された第２絶縁層４２によって、隣接する発光部６０を構成する第１電極６１及び有機層６３と分離されている。第２開口部５２は、矩形の平面形状を有し、２次元マトリクス状に配列されている。また、第２絶縁層４２に形成され、コンタクト部７１が底部に露出した第４開口部５４は、上部が広く、下部が狭い形状（即ち、所謂、順テーパ形状）を有する。そして、第２電極６２と補助電極層８１とがコンタクト部７１を介して電気的に接続されている。 The first electrode 61 and the organic layer 63 constituting the light emitting unit 60 are separated from the first electrode 61 and the organic layer 63 constituting the adjacent light emitting unit 60 by the second insulating layer 42 formed on the first insulating layer 41. It is separated. The second openings 52 have a rectangular planar shape and are arranged in a two-dimensional matrix. The fourth opening 54 formed in the second insulating layer 42 and exposed at the bottom of the contact portion 71 has a shape with a wide upper portion and a narrow lower portion (that is, a so-called forward tapered shape). The second electrode 62 and the auxiliary electrode layer 81 are electrically connected via the contact portion 71.
凹部５５の底部にあっては、第１絶縁層４１の一部４１Ａでコンタクト部７１が被覆されているので、エッチングによってコンタクト部７１がエッチングされることを防ぐことができる。また、凹部５５の底部の一部及び側壁には、補助電極層８１が形成されている。これによって、補助電極層８１の面積が増加し、補助電極層全体の低抵抗化を図ることができる。但し、凹部５５の底部の一部及び側壁に補助電極層８１を形成することは、必須ではない。 Since the contact portion 71 is covered with a portion 41A of the first insulating layer 41 at the bottom of the recess 55, the contact portion 71 can be prevented from being etched by etching. An auxiliary electrode layer 81 is formed on a part of the bottom of the recess 55 and on the side wall. As a result, the area of the auxiliary electrode layer 81 is increased, and the resistance of the entire auxiliary electrode layer can be reduced. However, it is not essential to form the auxiliary electrode layer 81 on a part of the bottom of the recess 55 and the side wall.
また、実施例１の表示装置の製造方法によれば、第１電極及び補助電極層を形成する際におけるエッチング工程において、コンタクト部は第１絶縁層で被覆された状態にあるので、コンタクト部がエッチングされることを防ぐことができる。しかも、コンタクト部とソース／ドレイン電極とを同一のエッチング液でエッチングすることが可能になるため、また、第１電極と補助電極層とを同一のエッチング液でエッチングすることが可能になるため、製造工程の簡素化を図ることができると共に、製造コストの低減を図ることが可能となる。また、コンタクト部を２層以上の積層構造とし、コンタクト部の頂面を耐酸化性の高い材料で構成することで、表示装置の製造時におけるコンタクト部の性能劣化を最小限に留めることができる。 Further, according to the manufacturing method of the display device of Example 1, in the etching process when forming the first electrode and the auxiliary electrode layer , the contact part is covered with the first insulating layer. Etching can be prevented. In addition, the contact portion and the source / drain electrode can be etched with the same etching solution, and the first electrode and the auxiliary electrode layer can be etched with the same etching solution. The manufacturing process can be simplified and the manufacturing cost can be reduced. Further, the contact portion has a laminated structure of two or more layers, and the top surface of the contact portion is made of a material having high oxidation resistance, so that the deterioration of the performance of the contact portion at the time of manufacturing the display device can be minimized. .
実施例５においては、実施例１〜実施例４において説明した表示装置における表示領域の縁部に位置する補助電極層の部分等の説明を行う。 In the fifth embodiment, a description will be given of a portion of the auxiliary electrode layer located at the edge of the display area in the display device described in the first to fourth embodiments.
図２１Ａに示すように、表示装置１０の表示領域１０’の縁部に位置する補助電極層８１の部分は、表示装置１０の周辺部１０”に設けられた給電部２３に、基体（第１基板）２１上に形成された、コンタクト部７１、及び、コンタクト部７１から延びる配線層２２を介して接続されている。これによって、給電部２３から配線層２２を介して、更には、補助電極層８１、コンタクト部７１を介して、第２電極６２に電圧が印加される。場合によっては、図２１Ｂに示すように、配線層２２の代わりに、コンタクト部７１を表示装置１０の周辺部１０”まで延在させ、コンタクト部７１の延在部を給電部としてもよい。 As shown in FIG. 21A, the portion of the auxiliary electrode layer 81 located at the edge of the display region 10 ′ of the display device 10 is connected to the power supply unit 23 provided in the peripheral portion 10 ″ of the display device 10 (first (first)). And a wiring layer 22 extending from the contact portion 71. Thus, the auxiliary electrode is further connected from the power feeding portion 23 via the wiring layer 22. A voltage is applied to the second electrode 62 through the layer 81 and the contact portion 71. In some cases, the contact portion 71 is replaced with the peripheral portion 10 of the display device 10 instead of the wiring layer 22, as shown in FIG. ”And the extended portion of the contact portion 71 may be used as a power feeding portion.
尚、本開示は、以下のような構成を取ることもできる。
［１］《表示装置》
基体上に設けられた駆動用回路、
駆動用回路及び基体を覆う第１絶縁層、
第１電極、発光層を備えた有機層、及び、第２電極が積層されて成る発光部、並びに、
第１電極を覆う第２絶縁層、
を備えた発光素子が２次元マトリクス状に配列されて成る表示装置であって、
発光素子は、更に、
補助電極層、及び、
基体上に形成されたコンタクト部、
を備えており、
第１電極は、第１絶縁層上に形成されており、且つ、第１絶縁層に設けられた第１開口部に形成された第１電極延在部を介して駆動用回路に電気的に接続されており、
有機層は、少なくとも、第２絶縁層に形成された第２開口部の底部に露出した第１電極の部分の上に形成されており、
第１絶縁層には、底部にコンタクト部が露出した第３開口部が形成されており、
少なくとも第２絶縁層には、底部にコンタクト部が露出した第４開口部が形成されており、
補助電極層は、第１電極と離間して、第１絶縁層上から第３開口部内に亙り形成されており、
第２電極は、有機層上から第２絶縁層上、更には、第４開口部内に亙り形成されている表示装置。
［２］コンタクト部は、基体側から、少なくとも、第１コンタクト層及び第２コンタクト層の積層構造を有し、
第２コンタクト層を構成する材料のエッチング速度は、第１電極を構成する材料のエッチング速度よりも遅い［１］に記載の表示装置。
［３］第２コンタクト層を構成する材料は、酸化され難い金属、又は、酸化され難い金属を含む材料から成る［２］に記載の表示装置。
［４］第１コンタクト層を構成する材料は、第２コンタクト層を構成する材料よりも導電性の高い金属、又は、導電性の高い金属を含む材料から成る［２］又は［３］に記載の表示装置。
［５］第２コンタクト層は、モリブデン又はチタンを含む材料から成り、
第１コンタクト層は、アルミニウム、銀及び銅から成る群から選択された少なくとも１種類の金属を含む材料から成る［２］乃至［４］のいずれか１項に記載の表示装置。
［６］駆動用回路は、ゲート電極、ゲート絶縁層、チャネル形成領域及びソース／ドレイン電極から成り、
ソース／ドレイン電極はコンタクト部と同一の構成を有する［１］乃至［５］のいずれか１項に記載の表示装置。
［７］コンタクト部の下には、少なくとも、ゲート電極を構成する層から成る第１層、及び、ゲート絶縁層を構成する層から成る第２層の積層構造が形成されている［６］に記載の表示装置。
［８］第４開口部は、上部が広く、下部が狭い形状を有する［１］乃至［７］のいずれか１項に記載の表示装置。
［９］第１電極は、アルミニウム又は銀を含む材料から成り、発光層からの光を反射する［１］乃至［８］のいずれか１項に記載の表示装置。
［１０］補助電極層を構成する材料は、第１電極を構成する材料と同じである［１］乃至［９］のいずれか１項に記載の表示装置。
［１１］第２電極は、発光層からの光を透過する［１］乃至［１０］のいずれか１項に記載の表示装置。
［１２］第２電極は、複数の発光素子において共通である［１］乃至［１１］のいずれか１項に記載の表示装置。
［１３］第１絶縁層上の補助電極層の部分は、離間した状態で、第１絶縁層上に形成された第１電極を囲んでいる［１］乃至［１２］のいずれか１項に記載の表示装置。
［１４］表示装置の表示領域の縁部に位置する補助電極層の部分は、表示装置の周辺部に設けられた給電部に、基体上に形成されたコンタクト部、及び、コンタクト部から延びる配線層を介して接続されている［１］乃至［１３］のいずれか１項に記載の表示装置。
［１５］《電子機器》
［１］乃至［１４］のいずれか１項に記載の表示装置を備えている電子機器。
［１６］《表示装置の製造方法》
駆動用回路、並びに、
第１電極、発光層を備えた有機層、及び、第２電極が積層されて成る発光部、
を備えた発光素子が２次元マトリクス状に配列されて成る表示装置の製造方法であって、
基体上に、駆動用回路及びコンタクト部を設けた後、
駆動用回路、コンタクト部及び基体を覆う第１絶縁層を形成し、次いで、
駆動用回路の上方に位置する第１絶縁層の部分に、底部に駆動用回路の一部が露出した第１開口部を形成し、併せて、コンタクト部の上方に位置する第１絶縁層の部分に、凹部、及び、底部にコンタクト部が露出した第３開口部を形成し、その後、
全面に導電材料層を形成した後、導電材料層をパターニングすることで、第１絶縁層上に第１電極を形成し、第１開口部内に第１電極延在部を形成し、第１絶縁層上から第３開口部内に亙り、第１電極と離間した補助電極層を形成し、併せて、凹部の底部の少なくとも一部から導電材料層を除去し、次いで、
露出した凹部の底部の部分に位置する第１絶縁層の部分を除去し、コンタクト部を露出させた後、全面に第２絶縁層を形成し、次いで、底部に第１電極が露出した第２開口部を第２絶縁層に形成し、併せて、凹部の底部の部分に露出したコンタクト部の部分に至る第４開口部を第２絶縁層に形成し、又は、
全面に第２絶縁層を形成し、次いで、凹部の上方に位置する第２絶縁層の部分を除去した後、更に、凹部の底部の部分に位置する第１絶縁層の部分を除去して、底部に第１電極が露出した第２開口部を第２絶縁層に形成し、併せて、凹部の底部の部分に露出したコンタクト部の部分に至る第４開口部を第２絶縁層及び第１絶縁層に形成した後、
第２開口部の底部に露出した第１電極の部分から第２絶縁層の一部の上に亙り有機層を形成し、その後、
有機層上から第２絶縁層上、更には、第４開口部内に亙り第２電極を形成する、
各工程から成る表示装置の製造方法。
［１７］第１絶縁層における凹部、第１開口部及び第３開口部の形成は、少なくとも、フォトリソグラフィ技術に基づき行われ、
フォトリソグラフィ技術においては、ハーフトーンマスク又はグレイトーンマスクを用いる［１６］に記載の表示装置の製造方法。
In addition, this indication can also take the following structures.
[1] << Display device >>
A driving circuit provided on the substrate,
A first insulating layer covering the driving circuit and the substrate;
A first electrode, an organic layer having a light-emitting layer, and a light-emitting portion formed by laminating a second electrode, and
A second insulating layer covering the first electrode;
A display device in which light-emitting elements provided with a light-emitting element are arranged in a two-dimensional matrix,
The light emitting element is further
An auxiliary electrode layer, and
A contact part formed on the substrate,
With
The first electrode is formed on the first insulating layer, and is electrically connected to the driving circuit via the first electrode extension formed in the first opening provided in the first insulating layer. Connected,
The organic layer is formed on at least the portion of the first electrode exposed at the bottom of the second opening formed in the second insulating layer,
The first insulating layer is formed with a third opening with a contact portion exposed at the bottom,
At least the second insulating layer has a fourth opening with a contact portion exposed at the bottom,
The auxiliary electrode layer is spaced from the first electrode and formed over the first insulating layer and into the third opening,
The display device in which the second electrode is formed over the organic layer, the second insulating layer, and the fourth opening.
[2] The contact portion has a laminated structure of at least a first contact layer and a second contact layer from the substrate side,
The display device according to [1], wherein an etching rate of a material constituting the second contact layer is slower than an etching rate of a material constituting the first electrode.
[3] The display device according to [2], wherein the material forming the second contact layer is made of a metal that is hardly oxidized or a material that contains a metal that is not easily oxidized.
[4] The material constituting the first contact layer is made of a metal having a higher conductivity than the material constituting the second contact layer, or a material containing a metal having a high conductivity, described in [2] or [3] Display device.
[5] The second contact layer is made of a material containing molybdenum or titanium,
The display device according to any one of [2] to [4], wherein the first contact layer is made of a material containing at least one metal selected from the group consisting of aluminum, silver, and copper.
[6] The driving circuit includes a gate electrode, a gate insulating layer, a channel formation region, and a source / drain electrode.
6. The display device according to any one of [1] to [5], wherein the source / drain electrode has the same configuration as the contact portion.
[7] A laminated structure of at least a first layer composed of a layer constituting a gate electrode and a second layer composed of a layer constituting a gate insulating layer is formed under the contact portion. [6] The display device described.
[8] The display device according to any one of [1] to [7], wherein the fourth opening has a shape in which an upper part is wide and a lower part is narrow.
[9] The display device according to any one of [1] to [8], wherein the first electrode is made of a material containing aluminum or silver and reflects light from the light emitting layer.
[10] The display device according to any one of [1] to [9], wherein a material constituting the auxiliary electrode layer is the same as a material constituting the first electrode.
[11] The display device according to any one of [1] to [10], wherein the second electrode transmits light from the light emitting layer.
[12] The display device according to any one of [1] to [11], wherein the second electrode is common to the plurality of light emitting elements.
[13] The auxiliary electrode layer portion on the first insulating layer surrounds the first electrode formed on the first insulating layer in a separated state, according to any one of [1] to [12] The display device described.
[14] The portion of the auxiliary electrode layer located at the edge of the display area of the display device includes a power supply portion provided in the peripheral portion of the display device, a contact portion formed on the substrate, and a wiring extending from the contact portion The display device according to any one of [1] to [13], which is connected through a layer.
[15] << Electronic equipment >>
[1] An electronic apparatus including the display device according to any one of [14].
[16] << Method for Manufacturing Display Device >>
Driving circuit, and
A first electrode, an organic layer provided with a light emitting layer, and a light emitting part formed by laminating a second electrode;
A method of manufacturing a display device in which light-emitting elements provided with a two-dimensional matrix are arranged,
After providing the driving circuit and the contact part on the substrate,
Forming a first insulating layer covering the driving circuit, the contact portion and the substrate;
A first opening in which a part of the driving circuit is exposed is formed at the bottom of the portion of the first insulating layer positioned above the driving circuit, and the first insulating layer positioned above the contact portion is also formed. Forming a recess in the portion and a third opening with the contact portion exposed at the bottom;
After the conductive material layer is formed on the entire surface, the conductive material layer is patterned to form the first electrode on the first insulating layer, the first electrode extension in the first opening, and the first insulation. Forming an auxiliary electrode layer spaced from the first electrode over the layer into the third opening, and removing the conductive material layer from at least a portion of the bottom of the recess;
After removing the portion of the first insulating layer located at the bottom portion of the exposed recess and exposing the contact portion, a second insulating layer is formed on the entire surface, and then the second electrode in which the first electrode is exposed at the bottom portion. Forming an opening in the second insulating layer, and simultaneously forming a fourth opening in the second insulating layer reaching the contact portion exposed at the bottom of the recess; or
Forming a second insulating layer on the entire surface, and then removing a portion of the second insulating layer located above the recess, and further removing a portion of the first insulating layer located at the bottom portion of the recess; A second opening having the first electrode exposed at the bottom is formed in the second insulating layer, and a fourth opening reaching the contact portion exposed at the bottom of the recess is also formed by the second insulating layer and the first. After forming on the insulating layer,
Forming an organic layer over a portion of the second insulating layer from the portion of the first electrode exposed at the bottom of the second opening,
A second electrode is formed from the organic layer to the second insulating layer and further into the fourth opening;
A method for manufacturing a display device comprising the steps.
[17] The formation of the recess, the first opening, and the third opening in the first insulating layer is performed based on at least a photolithography technique,
In the photolithography technique, the method for manufacturing a display device according to [16], wherein a halftone mask or a gray tone mask is used.
Claims (11)
駆動用回路及び基体を覆う第１絶縁層、
第１電極、発光層を備えた有機層、及び、第２電極が積層されて成る発光部、並びに、
第１電極を覆う第２絶縁層、
を備えた発光素子が２次元マトリクス状に配列されて成る表示装置であって、
発光素子は、更に、
補助電極層、及び、
基体上に形成されたコンタクト部、
を備えており、
第１電極は、第１絶縁層上に形成されており、且つ、第１絶縁層に設けられた第１開口部に形成された第１電極延在部を介して駆動用回路に電気的に接続されており、
有機層は、少なくとも、第２絶縁層に形成された第２開口部の底部に露出した第１電極の部分の上に形成されており、
第１絶縁層には、底部にコンタクト部が露出した第３開口部が形成されており、
少なくとも第２絶縁層には、底部にコンタクト部が露出した第４開口部が形成されており、
補助電極層は、第１電極と離間して、第１絶縁層上から第３開口部内に亙り形成されており、
第２電極は、有機層上から第２絶縁層上、更には、第４開口部内に亙り形成されている表示装置。 A driving circuit provided on the substrate,
A first insulating layer covering the driving circuit and the substrate;
A first electrode, an organic layer having a light-emitting layer, and a light-emitting portion formed by laminating a second electrode, and
A second insulating layer covering the first electrode;
A display device in which light-emitting elements provided with a light-emitting element are arranged in a two-dimensional matrix,
The light emitting element is further
An auxiliary electrode layer, and
A contact part formed on the substrate,
With
The first electrode is formed on the first insulating layer, and is electrically connected to the driving circuit via the first electrode extension formed in the first opening provided in the first insulating layer. Connected,
The organic layer is formed on at least the portion of the first electrode exposed at the bottom of the second opening formed in the second insulating layer,
The first insulating layer is formed with a third opening with a contact portion exposed at the bottom,
At least the second insulating layer has a fourth opening with a contact portion exposed at the bottom,
The auxiliary electrode layer is spaced from the first electrode and formed over the first insulating layer and into the third opening,
The display device in which the second electrode is formed over the organic layer, the second insulating layer, and the fourth opening.
第２コンタクト層を構成する材料のエッチング速度は、第１電極を構成する材料のエッチング速度よりも遅い請求項１に記載の表示装置。 The contact portion has at least a laminated structure of a first contact layer and a second contact layer from the substrate side,
The display device according to claim 1, wherein an etching rate of a material constituting the second contact layer is slower than an etching rate of a material constituting the first electrode.
ソース／ドレイン電極はコンタクト部と同一の構成を有する請求項１乃至請求項４のいずれか１項に記載の表示装置。 The driving circuit includes a gate electrode, a gate insulating layer, a channel formation region, and source / drain electrodes.
Source / drain electrodes is the display device according to any one of claims 1 to 4 having the same configuration as the contact portion.
第１電極、発光層を備えた有機層、及び、第２電極が積層されて成る発光部、
を備えた発光素子が２次元マトリクス状に配列されて成る表示装置の製造方法であって、
基体上に、駆動用回路及びコンタクト部を設けた後、
駆動用回路、コンタクト部及び基体を覆う第１絶縁層を形成し、次いで、
駆動用回路の上方に位置する第１絶縁層の部分に、底部に駆動用回路の一部が露出した第１開口部を形成し、併せて、コンタクト部の上方に位置する第１絶縁層の部分に、凹部、及び、底部にコンタクト部が露出した第３開口部を形成し、その後、
全面に導電材料層を形成した後、導電材料層をパターニングすることで、第１絶縁層上に第１電極を形成し、第１開口部内に第１電極延在部を形成し、第１絶縁層上から第３開口部内に亙り、第１電極と離間した補助電極層を形成し、併せて、凹部の底部の少なくとも一部から導電材料層を除去し、次いで、
露出した凹部の底部の部分に位置する第１絶縁層の部分を除去し、コンタクト部を露出させた後、全面に第２絶縁層を形成し、次いで、底部に第１電極が露出した第２開口部を第２絶縁層に形成し、併せて、凹部の底部の部分に露出したコンタクト部の部分に至る第４開口部を第２絶縁層に形成し、又は、
全面に第２絶縁層を形成し、次いで、凹部の上方に位置する第２絶縁層の部分を除去した後、更に、凹部の底部の部分に位置する第１絶縁層の部分を除去して、底部に第１電極が露出した第２開口部を第２絶縁層に形成し、併せて、凹部の底部の部分に露出したコンタクト部の部分に至る第４開口部を第２絶縁層及び第１絶縁層に形成した後、
第２開口部の底部に露出した第１電極の部分から第２絶縁層の一部の上に亙り有機層を形成し、その後、
有機層上から第２絶縁層上、更には、第４開口部内に亙り第２電極を形成する、
各工程から成る表示装置の製造方法。 Driving circuit, and
A first electrode, an organic layer provided with a light emitting layer, and a light emitting part formed by laminating a second electrode;
A method of manufacturing a display device in which light-emitting elements provided with a two-dimensional matrix are arranged,
After providing the driving circuit and the contact part on the substrate,
Forming a first insulating layer covering the driving circuit, the contact portion and the substrate;
A first opening in which a part of the driving circuit is exposed is formed at the bottom of the portion of the first insulating layer positioned above the driving circuit, and the first insulating layer positioned above the contact portion is also formed. Forming a recess in the portion and a third opening with the contact portion exposed at the bottom;
After the conductive material layer is formed on the entire surface, the conductive material layer is patterned to form the first electrode on the first insulating layer, the first electrode extension in the first opening, and the first insulation. Forming an auxiliary electrode layer spaced from the first electrode over the layer into the third opening, and removing the conductive material layer from at least a portion of the bottom of the recess;
After removing the portion of the first insulating layer located at the bottom portion of the exposed recess and exposing the contact portion, a second insulating layer is formed on the entire surface, and then the second electrode in which the first electrode is exposed at the bottom portion. Forming an opening in the second insulating layer, and simultaneously forming a fourth opening in the second insulating layer reaching the contact portion exposed at the bottom of the recess; or
Forming a second insulating layer on the entire surface, and then removing a portion of the second insulating layer located above the recess, and further removing a portion of the first insulating layer located at the bottom portion of the recess; A second opening having the first electrode exposed at the bottom is formed in the second insulating layer, and a fourth opening reaching the contact portion exposed at the bottom of the recess is also formed by the second insulating layer and the first. After forming on the insulating layer,
Forming an organic layer over a portion of the second insulating layer from the portion of the first electrode exposed at the bottom of the second opening,
A second electrode is formed from the organic layer to the second insulating layer and further into the fourth opening;
A method for manufacturing a display device comprising the steps.
フォトリソグラフィ技術においては、ハーフトーンマスク又はグレイトーンマスクを用いる請求項１０に記載の表示装置の製造方法。 The formation of the recess, the first opening, and the third opening in the first insulating layer is performed based on at least a photolithography technique,
The method for manufacturing a display device according to claim 10, wherein a halftone mask or a gray tone mask is used in the photolithography technique.
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| JP2012277619A JP5954162B2 (en) | 2012-03-28 | 2012-12-20 | Manufacturing method of display device |
| US13/847,200 US9178174B2 (en) | 2012-03-27 | 2013-03-19 | Display device and method of manufacturing the same, method of repairing display device, and electronic apparatus |
| CN201310089632.5A CN103367390B (en) | 2012-03-27 | 2013-03-20 | Display device and its manufacture method, the method and electronic equipment of repairing display device |
| CN201810153757.2A CN108376697B (en) | 2012-03-27 | 2013-03-20 | Display device, method of manufacturing the same, method of repairing the same, and electronic apparatus |
| US14/863,589 US9716251B2 (en) | 2012-03-27 | 2015-09-24 | Display device and method of manufacturing the same, method of repairing display device, and electronic apparatus |
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