JP2013219456A - Thermal protection circuit and thermal protection method - Google Patents

Thermal protection circuit and thermal protection method Download PDF

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JP2013219456A
JP2013219456A JP2012086322A JP2012086322A JP2013219456A JP 2013219456 A JP2013219456 A JP 2013219456A JP 2012086322 A JP2012086322 A JP 2012086322A JP 2012086322 A JP2012086322 A JP 2012086322A JP 2013219456 A JP2013219456 A JP 2013219456A
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fet
function unit
heat generation
switching element
detected
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JP5952060B2 (en
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Takeshi Yamashita
剛 山下
Yasutaka Hanaoka
康隆 花岡
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Yazaki Corp
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Yazaki Corp
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Priority to JP2012086322A priority Critical patent/JP5952060B2/en
Priority to PCT/JP2013/060264 priority patent/WO2013151111A1/en
Priority to CN201380018579.8A priority patent/CN104205635A/en
Priority to EP13717875.2A priority patent/EP2834918A1/en
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Priority to US14/488,887 priority patent/US20150002973A1/en
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
    • H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
    • H02H5/047—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature using a temperature responsive switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
    • H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/22—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for distribution gear, e.g. bus-bar systems; for switching devices
    • H02H7/222—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for distribution gear, e.g. bus-bar systems; for switching devices for switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature

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  • Emergency Protection Circuit Devices (AREA)
  • Protection Of Static Devices (AREA)
  • Electronic Switches (AREA)

Abstract

PROBLEM TO BE SOLVED: To reliably prevent abnormal heat generation of a switching element.SOLUTION: When a layer short circuit (interlayer short circuit) current appears in a FET 11 and a first cutoff function section 12a detects the layer short circuit (interlayer short circuit) current, a cutoff function section 12 does not cut off power supply from a power supply to a load resistance 22 if a temperature of the FET 11 detected by a second cutoff function section 12b does not exceed a predetermined value, but cuts off power supply from the power supply to the load resistance 22 at an input to the FET 11 if the temperature of the FET 11 detected by the second cutoff function section 12b exceeds the predetermined value.

Description

本発明は、スイッチング素子の異常発熱の保護に適した発熱保護回路及び発熱保護方法に関する。   The present invention relates to a heat generation protection circuit and a heat generation protection method suitable for protecting abnormal heat generation of a switching element.

従来より、電源からの電力を負荷側に供給するデバイスにおいては、メカニカルリレーに代えてＦＥＴ（Ｆｉｅｌｄ Ｅｆｆｅｃｔ Ｔｒａｎｓｉｓｔｏｒ）等のスイッチング素子を用いることが多い。   Conventionally, a device that supplies power from a power source to a load side often uses a switching element such as an FET (Field Effect Transistor) instead of a mechanical relay.

また、ＦＥＴに生じる異常発熱を回避する対策として、電源からの電力がＦＥＴを経由して負荷側に供給されるとともに、ＦＥＴの上流側にヒューズが設けられている回路構成においては、たとえば過電流が流れた際にヒューズの溶断にてその過電流の流れを遮断することが一般的に行われている。   As a measure to avoid abnormal heat generation in the FET, in a circuit configuration in which power from the power source is supplied to the load side via the FET and a fuse is provided on the upstream side of the FET, for example, overcurrent In general, the flow of overcurrent is interrupted by blowing a fuse when a current flows.

ところが、従来のメカニカルリレーを半導体化したＦＥＴを使用する場合、過電流以外の何らかの原因によって故障すると、異常発熱を起こす場合がある。このような現象は、過熱遮断機能を有したＦＥＴでも同様に生じる場合がある。   However, when using an FET in which a conventional mechanical relay is made semiconductor, failure may occur due to some cause other than overcurrent, which may cause abnormal heat generation. Such a phenomenon may occur similarly in an FET having an overheat cutoff function.

このような異常発熱を防止するようにしたものとして、特許文献１では、ＰチャネルＦＥＴのソース端子にバッテリのプラス端子が接続され、ＰチャネルＦＥＴのドレイ端子にパワーアンプの電源端子が接続され、ＰチャネルＦＥＴのゲート端子に温度スイッチＩＣの検出出力が接続され、パワーアンプの温度が規定値を超えると、温度スイッチＩＣからの出力がＨＩＧＨとなり、ＰチャネルＦＥＴがＯＦＦ状態となってバッテリからパワーアンプへの電源供給が遮断されるようにした発熱保護回路を提案している。   In order to prevent such abnormal heat generation, in Patent Document 1, the positive terminal of the battery is connected to the source terminal of the P-channel FET, the power terminal of the power amplifier is connected to the drain terminal of the P-channel FET, When the detection output of the temperature switch IC is connected to the gate terminal of the P-channel FET and the temperature of the power amplifier exceeds the specified value, the output from the temperature switch IC becomes HIGH, and the P-channel FET is turned off and power is supplied from the battery. A heat generation protection circuit is proposed in which the power supply to the amplifier is cut off.

特開２００８−１３５８２０号公報JP 2008-135820 A

ところで、上述した特許文献１での発熱保護回路では、パワーアンプの温度が規定値を超えると、温度スイッチＩＣからの出力によってＰチャネルＦＥＴがＯＦＦ状態とされるため、パワーアンプの異常発熱が回避されるようになっている。この場合、ＰチャネルＦＥＴがＯＦＦ状態とされるため、ＰチャネルＦＥＴも同様に異常発熱が回避される。   By the way, in the heat generation protection circuit in Patent Document 1 described above, if the temperature of the power amplifier exceeds a specified value, the P-channel FET is turned off by the output from the temperature switch IC, so that abnormal heat generation of the power amplifier is avoided. It has come to be. In this case, since the P-channel FET is turned off, abnormal heat generation is similarly avoided in the P-channel FET.

ところが、このような発熱保護回路では、たとえばサージの発生により、ＰチャネルＦＥＴのゲート酸化膜等が破壊されると、ゲート・ソース間やドレイン・ソース間にレアショート（層間短絡）が生じることがある。   However, in such a heat protection circuit, when a gate oxide film or the like of the P-channel FET is destroyed due to, for example, a surge, a rare short (interlayer short) may occur between the gate and the source or between the drain and the source. is there.

そして、このようなレアショート（層間短絡）が生じた場合、ＰチャネルＦＥＴがＯＦＦ状態とされないことから、レアショートによる発熱が温度スイッチＩＣの規定値を超えても、ＰチャネルＦＥＴの異常発熱が継続し、ＰチャネルＦＥＴが破壊されてしまうという問題があった。   When such a rare short (interlayer short) occurs, the P-channel FET is not turned off. Even if the heat generated by the rare short exceeds the specified value of the temperature switch IC, the P-channel FET generates abnormal heat. There was a problem that the P-channel FET was destroyed continuously.

本発明は、このような状況に鑑みてなされたものであり、スイッチング素子の異常発熱を確実に防止することができる発熱保護回路及び発熱保護方法を提供することを目的とする。   The present invention has been made in view of such a situation, and an object thereof is to provide a heat generation protection circuit and a heat generation protection method capable of reliably preventing abnormal heat generation of a switching element.

本発明の発熱保護回路は、電源からの電力を負荷側へ供給するスイッチング素子の異常発熱を保護する発熱保護回路であって、前記スイッチング素子の内部のレアショートを検出する機能と、前記スイッチング素子の温度を検出する機能とを有する遮断機能部を備え、前記遮断機能部は、前記レアショートを検出したとき、前記検出した温度が規定値を超えている場合には前記電源から負荷側に供給される電力を前記スイッチング素子の入力部分で遮断することを特徴とする。
本発明の発熱保護方法は、電源からの電力を負荷側へ供給するスイッチング素子の異常発熱を保護する発熱保護方法であって、前記スイッチング素子の内部のレアショートを検出する機能と、前記スイッチング素子の温度を検出する機能とを有する遮断機能部が設けられ、該遮断機能部により、前記レアショートを検出したとき、前記検出した温度が規定値を超えている場合には前記電源から負荷側に供給される電力を前記スイッチング素子の入力部分で遮断することを特徴とする。
本発明の発熱保護回路及び発熱保護方法では、スイッチング素子の内部のレアショートを検出する機能と、スイッチング素子の温度を検出する機能とを有する遮断機能部遮断機能部により、レアショートを検出したとき、検出した温度が規定値を超えている場合、電源から負荷側に供給される電力がスイッチング素子の入力部分で遮断される。 The heat generation protection circuit of the present invention is a heat generation protection circuit that protects abnormal heat generation of a switching element that supplies power from a power source to a load side, the function of detecting a rare short inside the switching element, and the switching element A shut-off function unit having a function of detecting the temperature of the power supply, and when the rare-short is detected, the shut-off function unit supplies the load from the power source when the detected temperature exceeds a specified value. The generated power is cut off at the input part of the switching element.
The heat generation protection method of the present invention is a heat generation protection method for protecting abnormal heat generation of a switching element that supplies power from a power source to a load side, the function of detecting a rare short inside the switching element, and the switching element A shut-off function unit having a function of detecting the temperature of the power source, and when the rare earth short is detected by the shut-off function unit, if the detected temperature exceeds a specified value, the power source is connected to the load side. The supplied power is cut off at the input portion of the switching element.
In the heat generation protection circuit and the heat generation protection method of the present invention, when a rare short is detected by the cutoff function unit cutoff function unit having a function of detecting a rare short inside the switching element and a function of detecting the temperature of the switching element. When the detected temperature exceeds the specified value, the power supplied from the power source to the load side is cut off at the input portion of the switching element.

本発明の発熱保護回路及び発熱保護方法によれば、スイッチング素子の内部のレアショートを検出する機能と、スイッチング素子の温度を検出する機能とを有する遮断機能部遮断機能部により、レアショートを検出したとき、検出した温度が規定値を超えている場合、電源から負荷側に供給される電力がスイッチング素子の入力部分で遮断されるようにしたので、負荷側の異常発熱を確実に防止することができる。   According to the heat generation protection circuit and the heat generation protection method of the present invention, a rare short circuit is detected by a cut-off function unit cut-off function unit having a function of detecting a rare short inside the switching element and a function of detecting the temperature of the switching element. When the detected temperature exceeds the specified value, the power supplied from the power supply to the load side is cut off at the input part of the switching element, so that abnormal heat generation on the load side is surely prevented. Can do.

本発明の発熱保護回路の一実施形態を説明するための図である。It is a figure for demonstrating one Embodiment of the heat generation protection circuit of this invention. 図１の発熱保護回路の詳細を説明するための図である。It is a figure for demonstrating the detail of the heat_generation | fever protection circuit of FIG. 図１の発熱保護回路の詳細を説明するための図である。It is a figure for demonstrating the detail of the heat_generation | fever protection circuit of FIG.

以下、本発明の発熱保護回路の実施形態の詳細を、図１〜図３を参照して説明する。まず、図１に示すように、発熱保護回路は、基板１０に搭載されたスイッチング素子であるＦＥＴ（Ｆｉｅｌｄ Ｅｆｆｅｃｔ Ｔｒａｎｓｉｓｔｏｒ）１１の近傍に配置される遮断機能部１２を備えている。   Details of the embodiment of the heat protection circuit of the present invention will be described below with reference to FIGS. First, as illustrated in FIG. 1, the heat generation protection circuit includes a blocking function unit 12 disposed in the vicinity of a field effect transistor (FET) 11 that is a switching element mounted on the substrate 10.

なお、図中符号２０はＦＥＴ１１をオン／オフ制御するＦＥＴ駆動ＩＣであり、同符号２１は規定値以上の電流が流れたとき電源からの電力供給を遮断するヒューズであり、同符号２２は負荷抵抗を示している。なお、ＦＥＴ１１としては、ＭＯＳ ＦＥＴ（Ｍｅｔａｌ Ｏｘｉｄｅ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｆｉｅｌｄ Ｅｆｆｅｃｔ Ｔｒａｎｓｉｓｔｏｒ）や、Ｃ−ＭＯＳ ＦＥＴ（Ｃｏｍｐｌｅｍｅｎｔａｒｙ ＭＯＳ ＦＥＴ）を用いることができる。また、これらはいずれにおいても、Ｐチャネル型、Ｎチャネル型を用いることができる。   In the figure, reference numeral 20 denotes an FET drive IC that controls on / off of the FET 11, reference numeral 21 denotes a fuse that cuts off power supply from a power source when a current exceeding a specified value flows, and reference numeral 22 denotes a load. Shows resistance. As the FET 11, a MOS FET (Metal Oxide Field Effect Effect Transistor) or a C-MOS FET (Complementary MOS FET) can be used. In either case, a P-channel type or an N-channel type can be used.

また、図１においては、電源と負荷抵抗２２との間に、ヒューズ２１と、基板１０に搭載されたＦＥＴ１１及び遮断機能部１２とが設けられ、ＦＥＴ１１はＦＥＴ駆動ＩＣ２０によりオン／オフ制御される接続形態がとられている。   In FIG. 1, a fuse 21, an FET 11 mounted on the substrate 10, and a cutoff function unit 12 are provided between a power source and a load resistor 22, and the FET 11 is on / off controlled by an FET drive IC 20. The connection form is taken.

また、遮断機能部１２は、後述のように、ＦＥＴ１１内部のレアショート（層間短絡）電流やＦＥＴ１１の温度を検出し、電源から負荷抵抗２２側に供給される電力をＦＥＴ１１の入力部分で遮断する機能を有している。   Further, as will be described later, the shut-off function unit 12 detects a rare short (interlayer short-circuit) current inside the FET 11 and the temperature of the FET 11, and shuts off the power supplied from the power source to the load resistor 22 at the input portion of the FET 11. It has a function.

すなわち、遮断機能部１２は、図２及び図３に示すように、ＦＥＴ１１とともに、基板１０に搭載されている。また、遮断機能部１２は、少なくとも、ＦＥＴ１１内部のレアショート（層間短絡）電流を検出する第１の遮断機能部１２ａと、ＦＥＴ１１の温度を検出する第２の遮断機能部１２ｂとを有している。   That is, the blocking function unit 12 is mounted on the substrate 10 together with the FET 11 as shown in FIGS. The cutoff function unit 12 includes at least a first cutoff function unit 12a that detects a rare short (interlayer short-circuit) current inside the FET 11, and a second cutoff function unit 12b that detects the temperature of the FET 11. Yes.

第１の遮断機能部１２ａは、基板１０の実装面とは反対側の面であって、ＦＥＴ１１と対峙する位置に設けられている。第２の遮断機能部１２ｂは、基板１０の実装面であって、ＦＥＴ１１に近接した位置に設けられている。   The first blocking function part 12 a is provided on the opposite side of the mounting surface of the substrate 10 and at a position facing the FET 11. The second blocking function part 12b is provided on the mounting surface of the substrate 10 and in a position close to the FET 11.

ここで、第１の遮断機能部１２ａは、ＦＥＴ１１内部のレアショート（層間短絡）電流（たとえば、ゲート電流の増加）を検出する。また、第２の遮断機能部１２ｂは、ＦＥＴ１１の温度を検出する。そして、遮断機能部１２は、第１の遮断機能部１２ａによりレアショート（層間短絡）電流が検出されたとき、第２の遮断機能部１２ｂにより検出されたＦＥＴ１１の温度が既定値を超えていなければ電源から負荷抵抗２２側への電力の供給を遮断しないが、第２の遮断機能部１２ｂにより検出されたＦＥＴ１１の温度が既定値を超えていれば電源から負荷抵抗２２側への電力の供給をＦＥＴ１１の入力部分で遮断する。   Here, the first cutoff function unit 12a detects a rare short (interlayer short) current (for example, an increase in gate current) inside the FET 11. The second cutoff function unit 12b detects the temperature of the FET 11. When the rare short-circuit (interlayer short-circuit) current is detected by the first cutoff function unit 12a, the cutoff function unit 12 must have the temperature of the FET 11 detected by the second cutoff function unit 12b exceeding a predetermined value. If the temperature of the FET 11 detected by the second cutoff function unit 12b exceeds a predetermined value, the power supply from the power source to the load resistor 22 side is not interrupted. Is blocked at the input portion of the FET 11.

なお、ここでは、第１の遮断機能部１２ａを基板１０の実装面とは反対側の面に設け、第２の遮断機能部１２ｂを実装面に設けた場合としているが、それぞれを逆になるように設けてもよい。また、第２の遮断機能部１２ｂは、ＦＥＴ１１の温度を検出できる近傍に設けられていればよく、図２、図３に示した配置に限定されない。また、第１の遮断機能部１２ａも図２、図３に示した配置に限定されない。   Here, the first blocking function part 12a is provided on the surface opposite to the mounting surface of the substrate 10 and the second blocking function part 12b is provided on the mounting surface. It may be provided as follows. Moreover, the 2nd interruption | blocking function part 12b should just be provided in the vicinity which can detect the temperature of FET11, and is not limited to the arrangement | positioning shown in FIG. 2, FIG. Moreover, the 1st interruption | blocking function part 12a is not limited to the arrangement | positioning shown in FIG. 2, FIG.

また、これら第１の遮断機能部１２ａ及び第２の遮断機能部１２ｂは、レアショート（層間短絡）電流が生じない構成とすることが好ましい。つまり、第１の遮断機能部１２ａ及び第２の遮断機能部１２ｂの内部構成において、それぞれの信号線間がサージに対して十分な耐圧性や絶縁性を有しているようにすることが好ましい。   Moreover, it is preferable that these 1st interruption | blocking function parts 12a and the 2nd interruption | blocking function part 12b are set as the structure which does not produce a rare short (interlayer short circuit) electric current. In other words, in the internal configuration of the first cutoff function unit 12a and the second cutoff function unit 12b, it is preferable that the respective signal lines have sufficient pressure resistance and insulation against surges. .

このような構成では、たとえばサージによりＦＥＴ１１にレアショート（層間短絡）電流が生じた場合、遮断機能部１２の第１の遮断機能部１２ａにより、そのレアショート（層間短絡）電流が検出される。また、第２の遮断機能部１２ｂにより、ＦＥＴ１１の温度が検出される。   In such a configuration, for example, when a rare short (interlayer short-circuit) current is generated in the FET 11 due to a surge, the rare short-circuit (interlayer short-circuit) current is detected by the first cut-off function unit 12a of the cut-off function unit 12. Further, the temperature of the FET 11 is detected by the second cutoff function unit 12b.

このとき、遮断機能部１２は、第１の遮断機能部１２ａによりレアショート（層間短絡）電流が検出されたとき、第２の遮断機能部１２ｂにより検出されたＦＥＴ１１の温度が既定値を超えていなければ電源から負荷抵抗２２側への電力の供給を遮断しない。一方、第２の遮断機能部１２ｂにより検出されたＦＥＴ１１の温度が既定値を超えていれば電源から負荷抵抗２２側への電力の供給をＦＥＴ１１の入力部分で遮断する。   At this time, when the first cutoff function unit 12a detects a rare short (interlayer short-circuit) current, the cutoff function unit 12 has the temperature of the FET 11 detected by the second cutoff function unit 12b exceeding a predetermined value. Otherwise, the supply of power from the power source to the load resistor 22 is not cut off. On the other hand, if the temperature of the FET 11 detected by the second cutoff function unit 12b exceeds a predetermined value, the supply of power from the power source to the load resistor 22 is cut off at the input portion of the FET 11.

なお、過電流が生じた場合は、上述したヒューズ２１の溶断により、電源から負荷抵抗２２側への電力の供給がＦＥＴ１１の上流側で遮断される。   When an overcurrent occurs, the supply of power from the power source to the load resistor 22 side is cut off on the upstream side of the FET 11 by the above-described melting of the fuse 21.

このように、本実施形態では、ＦＥＴ１１にレアショート（層間短絡）電流が生じ、第１の遮断機能部１２ａによりそのレアショート（層間短絡）電流が検出されると、遮断機能部１２により、第２の遮断機能部１２ｂにより検出されたＦＥＴ１１の温度が既定値を超えていなければ電源から負荷抵抗２２側への電力の供給を遮断しないが、第２の遮断機能部１２ｂにより検出されたＦＥＴ１１の温度が既定値を超えていれば電源から負荷抵抗２２側への電力の供給をＦＥＴ１１の入力部分で遮断するようにした。   As described above, in this embodiment, when a rare short (interlayer short) current is generated in the FET 11 and the rare short (interlayer short) current is detected by the first cutoff function unit 12a, the cutoff function unit 12 If the temperature of the FET 11 detected by the second cutoff function unit 12b does not exceed the predetermined value, the supply of power from the power source to the load resistor 22 side is not shut off, but the FET 11 detected by the second cutoff function unit 12b If the temperature exceeds the predetermined value, the power supply from the power source to the load resistor 22 side is cut off at the input portion of the FET 11.

これにより、レアショート（層間短絡）電流によるＦＥＴ１１の異常発熱を確実に防止することができる。また、ＦＥＴ１１の異常発熱の継続が回避されるため、ＦＥＴ１１が破壊されてしまうということも確実に防止することができる。   Thereby, abnormal heat generation of the FET 11 due to a rare short (interlayer short-circuit) current can be reliably prevented. In addition, since the continuation of abnormal heat generation of the FET 11 is avoided, it is possible to reliably prevent the FET 11 from being destroyed.

なお、本実施形態では、遮断機能部１２により、第２の遮断機能部１２ｂにより検出されたＦＥＴ１１の温度が既定値を超えていなければ電源から負荷抵抗２２側への電力の供給を遮断せず、第２の遮断機能部１２ｂにより検出されたＦＥＴ１１の温度が既定値を超えていれば電源から負荷抵抗２２側への電力の供給をＦＥＴ１１の入力部分で遮断するようにした場合として説明したが、これに限らず、第１の遮断機能部１２ａによりレアショート（層間短絡）電流が検出されたとき、遮断機能部１２により電力の供給がＦＥＴ１１の入力部分で遮断されるようにしてもよい。   In the present embodiment, if the temperature of the FET 11 detected by the second cutoff function unit 12b does not exceed the predetermined value, the supply of power from the power source to the load resistor 22 side is not cut off by the cutoff function unit 12. In the above description, the power supply from the power source to the load resistor 22 side is cut off at the input portion of the FET 11 if the temperature of the FET 11 detected by the second cutoff function unit 12b exceeds a predetermined value. Not limited to this, when a rare short (interlayer short circuit) current is detected by the first cutoff function unit 12a, the cutoff function unit 12 may cut off the supply of power at the input portion of the FET 11.

また、第１の遮断機能部１２ａによりレアショート（層間短絡）電流が検出されなくても、第２の遮断機能部１２ｂにより検出されたＦＥＴ１１の温度が既定値を超えていれば電源から負荷抵抗２２側への電力の供給をＦＥＴ１１の入力部分で遮断するようにしてもよい。この場合は、レアショート（層間短絡）以外の原因でＦＥＴ１１が異常発熱を生じることを回避することができる。   Even if a rare short (interlayer short-circuit) current is not detected by the first cutoff function unit 12a, the load resistance from the power source can be reduced if the temperature of the FET 11 detected by the second cutoff function unit 12b exceeds a predetermined value. The power supply to the 22 side may be cut off at the input portion of the FET 11. In this case, it is possible to avoid the FET 11 from generating abnormal heat due to a cause other than a rare short (interlayer short).

スイッチング素子によって電源からの電力を負荷側に供給するような回路を搭載した機器全般に適用可能である。   The present invention is applicable to all devices equipped with a circuit that supplies power from a power source to a load side by a switching element.

１０ 基板
１１ ＦＥＴ
１２ 遮断機能部
１２ａ 第１の遮断機能部
１２ｂ 第２の遮断機能部
２０ ＦＥＴ駆動ＩＣ
２１ ヒューズ
２２ 負荷抵抗 10 Substrate 11 FET
12 Blocking Function Unit 12a First Blocking Function Unit 12b Second Blocking Function Unit 20 FET Drive IC
21 fuse 22 load resistance

Claims (2)

電源からの電力を負荷側へ供給するスイッチング素子の異常発熱を保護する発熱保護回路であって、
前記スイッチング素子の内部のレアショートを検出する機能と、前記スイッチング素子の温度を検出する機能とを有する遮断機能部を備え、
前記遮断機能部は、前記レアショートを検出したとき、前記検出した温度が規定値を超えている場合には前記電源から負荷側に供給される電力を前記スイッチング素子の入力部分で遮断する
ことを特徴とする発熱保護回路。 A heat generation protection circuit that protects abnormal heat generation of the switching element that supplies power from the power source to the load side,
A cutoff function unit having a function of detecting a rare short inside the switching element and a function of detecting a temperature of the switching element;
The shut-off function unit shuts off the power supplied from the power source to the load side at the input part of the switching element when the detected temperature exceeds a specified value when the rare short is detected. Features a heat generation protection circuit. 電源からの電力を負荷側へ供給するスイッチング素子の異常発熱を保護する発熱保護方法であって、
前記スイッチング素子の内部のレアショートを検出する機能と、前記スイッチング素子の温度を検出する機能とを有する遮断機能部が設けられ、
該遮断機能部により、前記レアショートを検出したとき、前記検出した温度が規定値を超えている場合には前記電源から負荷側に供給される電力を前記スイッチング素子の入力部分で遮断する
ことを特徴とする発熱保護方法。 A heat generation protection method for protecting abnormal heat generation of a switching element that supplies power from a power source to a load side,
A shut-off function unit having a function of detecting a rare short inside the switching element and a function of detecting the temperature of the switching element;
When the rare-short is detected by the cutoff function unit, if the detected temperature exceeds a specified value, the power supplied from the power source to the load side is shut off at the input part of the switching element. A heat generation protection method characterized.
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