JP2013214843A - Integration acoustic device and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an integration acoustic device which enables an acoustic device to be manufactured at low costs while preventing the damage to an integrated circuit with a simple structure, and to provide a manufacturing method of the integration acoustic device.SOLUTION: An integration acoustic device 10 is formed so as to include an integrated circuit board 11 including an integrated circuit formed therein, a resin layer 13 provided on the integrated circuit board, and an acoustic device 12 formed on the resin layer 13. A clearance 16 may be defined between the resin layer 13 and the acoustic device 12. A base layer 17 may be placed between the resin layer 13 and the acoustic device 12. The acoustic device 12 may cooperate with the integrated circuit in the integrated circuit board to function as a frequency reference oscillator or a resonance type sensor.

Description

  The present invention relates to an integrated acoustic device in which an acoustic device such as a piezoelectric thin film filter (FBAR), a Lamb wave device, or a surface acoustic wave (SAW) device is integrated on an integrated circuit board, and a manufacturing method thereof.

  Conventionally, when such an acoustic device is disposed on an integrated circuit substrate, the surface of the integrated circuit substrate is flattened, and then the acoustic device is manufactured directly on the flattened surface.

  On the other hand, according to Patent Document 1, for example, a functional device in which a MEMS material layer such as single crystal Si or PZT or a MEMS structure is attached to an integrated circuit substrate with a resin to produce an integrated MEMS. And a manufacturing method thereof.

  Non-Patent Document 1 reports an example in which an FBAR is fabricated on an integrated circuit substrate.

JP 2010-017855 A

Hiroaki SATOH, Hitoshi SUZUKI, Chikau TAKAHASHI, Chouji NARAHARA and Yasuo EBATA, “A 400MHZ ONE-CHIP OSCILLATOR USING AN AIR-GAP TYPE THIN FILM RESONATOR”, PROCEEDINGS OF IEEE ULTRASONIC SYMPOSIUM, pp.363-368,1987

By the way, when an acoustic device is manufactured directly on the surface of the flattened integrated circuit board described above, the flattened surface of the integrated circuit board is an acoustic device from the viewpoint of material properties, flatness, surface roughness, and the like. In some cases, it is not suitable for the fabrication of the substrate, and a process for planarizing the surface of the integrated circuit substrate is required, resulting in an increase in manufacturing cost.
Further, when it is necessary to define a gap between the acoustic device and the integrated circuit board, there is a possibility that the integrated circuit of the integrated circuit board may be damaged in the process of forming the gap.

  Further, in the method for manufacturing a functional device according to Patent Document 1, the resin for attaching the MEMS to the integrated circuit board is finally removed, and a gap is defined between the integrated circuit board and the MEMS. . For this reason, in the resin removal step, the integrated circuit of the integrated circuit substrate may be damaged. In addition, additives are often blended in the resin, and the performance of the MEMS may deteriorate due to resin residues resulting from the additive.

  In the device manufactured according to Non-Patent Document 1, since the FBAR is manufactured directly on the integrated circuit substrate, the integrated circuit of the integrated circuit substrate may be damaged when the FBAR is manufactured. Further, the FBAR is manufactured in a portion where no integrated circuit is formed on the integrated circuit substrate. For this reason, it is necessary to secure a place for mounting the FBAR on the integrated circuit board, and the integrated circuit board becomes large.

  In view of the above problems, the first object of the present invention is to provide an integrated acoustic device that can produce an acoustic device with a simple configuration at low cost and without damaging the integrated circuit. The second object is to provide the manufacturing method.

In order to achieve the first object, an integrated acoustic device of the present invention includes an integrated circuit board having an integrated circuit formed therein, a resin layer provided on the integrated circuit board, and an upper layer of the resin layer. And an acoustic device formed in the above.
According to the above configuration, even if the surface has an uneven shape, it is leveled by application of the resin, so there is no need to flatten the surface of the integrated circuit substrate. Accordingly, a planarization step is not necessary, and a standard integrated circuit substrate can be used as it is as an integrated circuit substrate, so that manufacturing costs can be reduced. Furthermore, by bonding and arranging a base layer suitable for an acoustic device on the resin layer, the performance of the acoustic device can be improved as compared with the case where the acoustic device is directly manufactured on the integrated circuit substrate.

  In the above configuration, preferably, a gap is defined between the resin layer and the acoustic device. For this reason, the vibration of the acoustic device is not transmitted to the integrated circuit board.

Preferably, a base layer is disposed between the resin layer and the acoustic device. The underlayer is preferably silicon, silicon oxide, silicon nitride, silicon carbide, germanium, silicon germanium, titanium oxide, diamond or sapphire.
The resin layer is preferably made of benzocyclobutene (BCB) or polyimide.
The acoustic device is preferably composed of Al, ScAlN or ZnO. Acoustic device may comprise SiO _2.
The acoustic device is preferably a piezoelectric thin film filter (FBAR) or surface acoustic wave (SAW) device.
The acoustic device preferably operates as a frequency reference oscillator or a resonant sensor in cooperation with an integrated circuit in the integrated circuit substrate.

According to the above configuration, when the acoustic device includes, for example, SiO ₂ , the base film can be selectively formed by using a material that can be selectively etched with SiO ₂ , for example, silicon, germanium, or silicon germanium. By etching the underlayer, a void can be defined between the acoustic device and the integrated circuit substrate. SiO ₂ has a positive Young's modulus temperature coefficient and can be combined with other materials having a negative Young's modulus temperature coefficient to correct the temperature coefficient of the acoustic device.
When the acoustic device includes SiO ₂ as a sacrificial layer, the underlying film is also made of SiO _2, and the underlying film is etched at the same time when the acoustic device is manufactured, so that the acoustic device and the integrated circuit substrate can be etched. A void can be defined. Although the integrated circuit board also contains SiO ₂ , the integrated circuit board is protected by the resin layer and thus is not damaged by this etching. Not only SiO _2, but also a material that can damage the integrated circuit substrate by etching, such as titanium oxide, can be used for an acoustic device for the above reasons.
Furthermore, if the adhesive function of the resin layer is utilized, a base layer suitable for an acoustic device can be bonded and disposed on the resin layer. For example, single crystal silicon, silicon carbide, diamond and sapphire are known as materials having good acoustic characteristics. In addition, a smooth surface suitable for manufacturing an acoustic device can be obtained without damaging the integrated circuit substrate by separately bonding and arranging a ground layer that has been polished in advance.
In this way, for example, the acoustic device can operate as a frequency reference oscillator or a resonant sensor in cooperation with the integrated circuit in the integrated circuit substrate, and the integrated acoustic device is small in size and low in cost with a simple configuration. Can be made.

  In order to achieve the second object, the integrated acoustic device manufacturing method of the present invention includes a first step of forming a base layer on a semiconductor or dielectric substrate, and an integrated circuit formed therein. A second step of applying a bonding material on the upper surface of at least one of the integrated circuit substrate and the semiconductor or dielectric substrate on which the underlayer is formed, and the semiconductor or dielectric substrate is turned upside down on the integrated circuit substrate A third step of overlapping and bonding, a fourth step of removing only the semiconductor or dielectric substrate, leaving the underlying layer on the integrated circuit substrate, and a lower layer by patterning a metal thin film on the underlying layer A fifth step of forming an electrode, a sixth step of forming an acoustic device from above the lower electrode on the integrated circuit substrate, and taking out the lower electrode and the upper electrode of the acoustic device on the integrated circuit substrate from the underlying layer Connect to electrode Characterized in that it contains a seventh step of forming an electrode connection portion for.

In the above configuration, preferably, after the seventh step, an eighth step of removing the underlayer in the lower region of the acoustic device is provided.
Preferably, the base layer is silicon, silicon oxide, silicon nitride, silicon carbide, germanium, silicon germanium, titanium oxide, diamond, or sapphire.

The integrated acoustic device of the present invention preferably has a piezoelectric thin film filter (FBAR) made of AlN, ScAlN or ZnO, preferably via a resin layer made of benzocyclobutene (BCB) or polyimide on the surface of the integrated circuit substrate. Since an acoustic device such as a surface acoustic wave (SAW) device is formed, the surface of the integrated circuit substrate is covered and protected by a resin layer. Therefore, a process for planarizing the integrated circuit board is not required, and the integrated circuit of the integrated circuit board is not damaged in the acoustic device manufacturing process, and the product yield of the device is improved. In addition, the acoustic device can be reduced in size and improved in performance with a simple configuration.
When using a base layer suitable for the integrated acoustic device of the present invention, for example, single crystal silicon, silicon carbide, diamond and sapphire, using the adhesive function of the resin layer, these base layers are bonded on the resin layer, By disposing the substrate, a base layer suitable for an acoustic device can be formed without damaging the integrated circuit substrate. When a substrate having a high flatness is required as the underlayer, the underlayer can be planarized on the semiconductor or dielectric substrate on which the underlayer is formed. Therefore, there is no risk of damaging the integrated circuit substrate by polishing or the like.

  According to the method for manufacturing an integrated acoustic device of the present invention, the integrated acoustic device can be manufactured at low cost without damaging the integrated circuit.

The structure of 1st embodiment of the integrated acoustic device by this invention is shown, (A) is a top view, (B) is sectional drawing along the II line | wire of (A). It is sectional drawing which shows the manufacturing process of the semiconductor substrate in the integrated acoustic device of FIG. FIG. 2 is a cross-sectional view showing a manufacturing process of the integrated circuit board in the integrated circuit board of FIG. 1. 2A is a cross-sectional view of the semiconductor substrate of FIG. 2 and the integrated circuit substrate of FIG. 3, and FIG. FIG. 5 is a cross-sectional view sequentially showing steps for electrical connection of an acoustic device on the integrated circuit boards joined in FIG. 4. The structure of 2nd embodiment of the integrated acoustic device by this invention is shown, (A) is a top view, (B) is sectional drawing along the II-II line of (A).

(First embodiment of integrated acoustic device)
Hereinafter, the present invention will be described in detail based on the embodiments shown in the drawings.
FIG. 1 shows a configuration of a first embodiment of an integrated acoustic device 10 (hereinafter referred to as a device) according to the present invention, in which (A) is a plan view and (B) is a line I-I in (A). FIG.
In FIG. 1, a device 10 includes an integrated circuit board 11 and an acoustic device 12 disposed on the integrated circuit board 11. In this case, the acoustic device 12 is, for example, a piezoelectric thin film filter (referred to as film bulk acoustic resonator, FBAR).
Here, the FBAR is an acoustic device that uses the resonance vibration of a piezoelectric film that is a bulk acoustic wave, and can be used for a bandpass filter or a low-phase noise oscillator. It has a structure that makes it easy to vibrate.

The integrated circuit board 11 has a known configuration, and includes an integrated circuit such as an IC or an LSI configured therein. That is, for example, it includes a transistor on a semiconductor substrate, a single-layer or multilayer wiring layer, and various elements configured in or between these wiring layers.
The integrated circuit board 11 has two metal pads (not shown) on the upper surface thereof for connection to a plurality of metal pads 11a serving as extraction electrodes from the integrated circuit and an acoustic device connection portion comprising two terminals. It has.

  Further, the integrated circuit board 11 includes a resin layer 13 over the entire surface. The resin layer 13 is made of, for example, benzocyclobutene (referred to as BCB) or polyimide. As shown in the plan view of FIG. 1A, the resin layer 13 is removed from the region of the metal pad 11a so as not to prevent electrical connection to the outside of the metal pad 11a.

  The acoustic device 12 is made of, for example, AlN, and is bonded onto the integrated circuit substrate 11 by a resin layer 13 disposed on the integrated circuit substrate 11. Furthermore, the acoustic device 12 includes an upper electrode 15 on its upper surface and a lower electrode 14 on its lower surface.

  Here, as shown in FIG. 1B, the upper electrode 15 is connected to the metal pad of the integrated circuit substrate 11 via the left electrode connection portion 15a.

  Further, as shown in FIG. 1B, the lower electrode 14 is connected to the metal pad of the integrated circuit substrate 11 through the right electrode connection portion 14a. As a result, the acoustic device 12 is electrically connected to the integrated circuit in the integrated circuit substrate 11.

  Below the acoustic device 12, a gap (hereinafter referred to as a void) 16 is defined between the acoustic device 12 and the resin layer 13 on the integrated circuit substrate 11. Thereby, the acoustic device 12 becomes easy to vibrate. The void 16 is formed by forming a base layer 17 over the entire surface of the resin layer 13 before the formation of the acoustic device 12 and selectively removing it by etching or the like after the formation of the acoustic device 12. Has been.

  As described above, the material of the base layer 17 inserted between the resin layer 13 and the acoustic device 12 is silicon, silicon oxide, silicon nitride, silicon carbide, germanium, silicon germanium, titanium oxide, diamond, sapphire, or the like. Can be mentioned.

The device 10 according to the embodiment of the present invention is configured as described above, and is manufactured according to the manufacturing method shown in FIGS.
FIG. 2 is a cross-sectional view showing a manufacturing process of a semiconductor or dielectric substrate in the integrated acoustic device of FIG.
First, as shown in FIG. 2A, first, a semiconductor or dielectric substrate, for example, a silicon (Si) substrate 21 having a thickness of 300 μm is prepared, and a base layer 22 is formed on the upper surface of the silicon substrate 21. .
The underlayer 22 is made of, for example, silicon having a thickness of 1 μm, silicon oxide, silicon nitride, germanium, or the like. More specifically, in the case of silicon having a thickness of 1 μm, an SOI (Silicon On Insulator) having a device layer of 1 μm can be used. A silicon oxide, silicon nitride, germanium or the like having a thickness of 1 μm can be formed on a silicon substrate by CVD (Chemical Vapor Deposition) or sputter deposition. Further, a substrate made of a base film material may be bonded onto a silicon substrate, and this may be thinned by polishing to form a base film.

FIG. 3 is a cross-sectional view showing a manufacturing process of the integrated circuit board in the integrated circuit board of FIG.
As shown in FIG. 3, an integrated circuit substrate 31 into which an acoustic device is to be incorporated is prepared separately from the silicon substrate 21 described above. The integrated circuit board 31 has a known configuration, and an integrated circuit (not shown) such as an IC or an LSI is configured inside. In the example, a 0.18 μm process CMOS substrate manufactured by TSMC of Taiwan was used.
Then, an extraction electrode (a metal pad 11a in FIG. 1B and a not-shown metal pad for connecting an acoustic device) is formed on the upper surface of the integrated circuit substrate 31 by, for example, a metal deposition process by patterning a photoresist. Here, each extraction electrode is composed of, for example, Cr having a thickness of 10 nm, Pt having a thickness of 30 nm, and a layer having a thickness of 100 nm.

A resin material for bonding is applied over the entire upper surface of the integrated circuit substrate 31 by, for example, spin coating, and then heat treatment is performed to form the resin layer 32. The resin layer 32 has a thickness of 3 μm, for example, and is made of benzocyclobutene (BCB) or polyimide. In the examples, the heat treatment was 100 ° C. for benzocyclobutene (BCB), soft bake in the air, 350 ° C. for polyimide (UR-3100E), and full cure in nitrogen.
Thereby, the entire surface of the integrated circuit substrate 31 is covered and protected by the resin layer 32, and the uneven shape of the surface is concealed and becomes relatively flat.

4A shows a bonding process of the semiconductor substrate of FIG. 2 and the integrated circuit board of FIG. 3, and FIG. 4B is a cross-sectional view showing the semiconductor substrate removal process.
As shown in FIG. 4A, the silicon substrate 21 (see FIG. 2) on which the base layer 22 is formed on the integrated circuit substrate 31 (see FIG. 3) on which the resin layer 32 is formed in this way. They are joined by being turned upside down and heated and pressed.
As an example, when the resin layer 32 is BCB, it can be joined at a pressure of 1 MPa by heating at 270 ° C. When the resin layer 32 was a polyimide, it was heated at 350 ° C. and bonded with a pressure of 2 MPa.

Next, as shown in FIG. 4B, the silicon substrate 21 is removed, for example, by plasma etching using SF ₆ or the like. As a result, the base layer 22 is disposed on the integrated circuit substrate 31.

5A to 5F are cross-sectional views sequentially showing steps for electrical connection of acoustic devices on the integrated circuit boards joined in FIG.
As shown in FIG. 5 (A), on the surface of the integrated circuit substrate 31 where the base layer 22 is bonded to the resin layer 32 on the integrated circuit substrate 31, as shown in FIG. Then, the lower electrode 33 is formed. The lower electrode 33 is made of ruthenium having a thickness of 100 nm, for example. In the example, ruthenium etching was performed at about 100 ° C. using a photoresist mask and ozone gas.

Subsequently, as shown in FIG. 5B, the acoustic device 34 is similarly formed by patterning in the region above the lower electrode 33 on the integrated circuit substrate 31. The acoustic device 34 is made of AlN having a thickness of 1.6 μm, for example. As shown in FIG. 5B, a part of the acoustic device 34 protrudes from the left end of the lower electrode 33 and extends on the base layer 22. . In the example, AlN was formed by reactive sputtering using argon and nitrogen with aluminum as a target. Thereafter, AlN was wet etched into the shape of the acoustic device 34 using diluted TMAH (Tetramethylammonium Hydroxide).
Next, as shown in FIG. 5C, an upper electrode 36 made of, for example, aluminum having a thickness of 100 nm is formed on the acoustic device 34 made of AlN. In the embodiment, as a process for forming the upper electrode 36, a lift-off method using two-layer photoresist patterning and vacuum deposition is used.

Thereafter, as shown in FIG. 5D, the underlying silicon layer 22 is etched into the shape shown in FIG. 1A, and further, the upper and lower sides of the resin layer 32 are formed on both sides of the lower electrode 33 and the acoustic device 34. Via holes 35a and 35b reaching the extraction electrodes (not shown) on the integrated circuit board 31 are formed.
Etching of the silicon of the underlayer 22 is performed by RIE or the like using SF ₆ after forming a mask made of a photoresist having a thickness of 2 μm.
The via holes 35a and 35b are formed, for example, by forming a mask made of a photoresist having a thickness of 10 μm over the lower electrode 33 and the acoustic device 34 over the entire upper surface of the base layer 22, and then forming CF ₄ and O _2. This is performed by removing the mask after removing the resin layer 32 in the region of the via holes 35a and 35b by RIE etching or the like.

Thereafter, as shown in FIG. 5E, a metal layer is formed by sputtering or the like on the end portions of the upper electrode 36 and the lower electrode 33 and the inner surfaces and the peripheral edges of the via holes 35a and 35b. This metal layer is composed of, for example, a two-layer film made of Cr / Au having a thickness of 1 μm.
The metal portions formed on the inner surface and the peripheral edge of the via hole 35a are integrated with the lower electrode 33 to form the electrode connecting portion 33a, and the metal portions formed on the inner surface and the peripheral edge of the via hole 36a are the upper electrode 36. And the electrode connecting portion 36a. In this example, a 130 nm thick back antireflection film (referred to as BARC) and a 1 μm thick photoresist were used for these patterning.
Accordingly, the lower electrode 33 and the upper electrode 36 connected to the acoustic device 34 are electrically connected to the corresponding extraction electrodes (not shown) of the integrated circuit board 31 by the electrode connection portions 33a and 36a, It functions as the acoustic device 34.

Subsequently, as shown in FIG. 5 (F), the region located below the acoustic device 34 of the base layer 22 is removed by etching or the like, and a void 38 is defined.
The photoresist mask used in etching the base layer 22 has a pair of mask holes 39a and 39b shown in FIG. The photoresist mask is formed on the entire surface of the integrated circuit substrate 31 from above the lower electrode 33, the acoustic device 34, the upper electrode 36, and the electrode connection portions 33a and 36a. In FIG. 1A, regions removed by etching or the like from the mask holes 39a and 39b are indicated by dotted arcs.
During the etching, the foundation layer 22 is etched from these mask holes 39a and 39b, and the foundation layer 22 is removed to the position of the arc shown in FIG. (Indicated by reference numeral 16 in FIG. 1B) is formed. In the example, the silicon underlayer 22 was etched with XeF ₂ gas.

  Since the device 10 according to the present invention is constructed and manufactured as described above, the acoustic devices 12 and 34 are integrated circuit boards as shown in FIG. 1 and FIG. Bonded onto the integrated circuit substrates 11 and 31 through resin layers 13 and 32 formed on the surfaces of the layers 11 and 31. Therefore, the surfaces of the integrated circuit boards 11 and 31 are covered and protected by the resin layers 13 and 32, and the subsequent acoustic devices 12 and 34 are electrically connected to the integrated circuit boards 11 and 31. In the process or the formation process of the gaps 16 and 38, the integrated circuit of the integrated circuit boards 11 and 31 is not damaged.

Further, since the resin layers 13 and 32 are formed on the integrated circuit substrates 13 and 31, even if the surface of the integrated circuit substrates 11 and 31 has an uneven shape, the resin layers 13 and 32 have these uneven shapes. Absorb. Therefore, there is no need to perform a step of flattening the surfaces of the integrated circuit substrates 13 and 32.
In the embodiment, single crystal silicon to be the base layer 22 is bonded and arranged on the resin layers 13 and 32. However, the single crystal silicon is excellent in smoothness and suitable for film formation of high-performance AlN. Can be selectively etched.

Further, when the acoustic devices 12 and 34 are made of SiO ₂ , the temperature characteristics of the acoustic devices 12 and 34 can be corrected, and the SiO ₂ constituting the acoustic devices 12 and 34 can be used as the material of the base layer 22. For example, a material suitable for film formation of the acoustic devices 12 and 34, such as single crystal silicon, can be selected.

  In the embodiment described above, the void 38 is defined by removing the region below the acoustic device 34 of the foundation layer 22, but the present invention is not limited thereto, and the void 38 may not be defined. In this case, since it is not necessary to remove the underlayer 22, it is possible to select a material without considering etching. For example, it has excellent acoustic characteristics such as silicon carbide, diamond, sapphire, etc. Such materials that cannot be formed on the substrate 31 can also be used.

  The integrated acoustic device 10 of the present invention can operate as an oscillator, a frequency reference oscillator, a resonator, a resonant sensor, a filter, or the like in cooperation with the integrated circuit in the integrated circuit board 11.

(Second Embodiment of Integrated Acoustic Device)
FIG. 6 shows the configuration of the second embodiment of the integrated acoustic device according to the present invention.
In FIG. 6, the device 40 has substantially the same configuration as that of the device 10 shown in FIG. 1.

The device 40 is different from the device 10 shown in FIG. 1 in the following points.
That is, the device 40 is provided with an acoustic device 41 instead of the acoustic device 12. The acoustic device 41 is a SAW device and is composed of AlN or ScAlN.
Here, below the acoustic device 41, the gap 16 shown in FIG. 1B is not provided. Note that if a gap (not shown) is formed between the acoustic device 41 and the resin layer 13 as in the first embodiment, the device can be operated as a Lamb wave device which is a kind of SAW device.

  Further, a comb-shaped upper electrode 42 is formed on the upper surface of the acoustic device 41 in place of the upper electrode 15, and the upper electrode 42 is connected to the extraction electrode (on the integrated circuit substrate 11) via the electrode connection portion 43. (Not shown).

The integrated acoustic device 40 having such a configuration is manufactured in the same manner as the device 10 shown in FIG. 1, that is, according to the manufacturing method shown in FIGS.
At that time, the lower electrode forming step shown in FIG. 5A and the gap forming step shown in FIG. 5F are omitted.

  According to the integrated acoustic device 40 according to this embodiment, the integrated circuit board 11 is covered and protected by the resin layer 13 in the same manner as the device 10 shown in FIG. The integrated circuit on the circuit board 11 is not damaged. Further, since the resin layer 13 is formed on the integrated circuit substrate 11, it is not necessary to flatten the surface of the integrated circuit substrate 11.

  For example, in the above-described embodiment, the acoustic device 12 is a piezoelectric thin film filter (FBAR), and the acoustic device 41 is a general SAW device, but is not limited thereto, and other acoustic devices such as a Lamb wave device. There may be.

  The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the invention described in the claims, and it goes without saying that these are also included in the scope of the present invention.

10, 40: Integrated acoustic device (device)
11, 31: Integrated circuit board 11a: Metal pad 12: Acoustic device (FBAR)
13, 32: Resin layer 14: Lower electrode 14a, 15a: Electrode connection 15: Upper electrode 16, 38: Air gap 17: Underlayer 21: Semiconductor substrate 22: Underlayer 33: Lower electrode 33a, 36a: Electrode connection 34 : Acoustic device 35a, 35b: Via hole 36: Upper electrode 38: Gap 39a, 39b: Mask hole 40: Integrated acoustic device 41: Acoustic device (SAW device)
42: Upper electrode 43: Electrode connection portion

Claims (13)

An integrated circuit board having an integrated circuit configured therein;
A resin layer provided on the integrated circuit substrate;
An acoustic device formed on the resin layer;
An integrated acoustic device comprising:   The integrated acoustic device according to claim 1, wherein a gap is defined between the resin layer and the acoustic device.   The integrated acoustic device according to claim 1, wherein a base layer is disposed between the resin layer and the acoustic device.   The integrated acoustic device according to claim 3, wherein the underlayer is silicon, silicon oxide, silicon nitride, silicon carbide, germanium, silicon germanium, titanium oxide, diamond, or sapphire.   The integrated acoustic device according to claim 1, wherein the acoustic device is made of Al, ScAlN, or ZnO. The integrated acoustic device according to claim 1, wherein the acoustic device contains SiO ₂ .   The integrated acoustic device according to claim 1, wherein the acoustic device is a piezoelectric thin film filter (FBAR), a surface acoustic wave (SAW) device, or a Lamb wave (plate wave) device. .   The integrated acoustic device according to claim 1, wherein the acoustic device operates as a frequency reference oscillator or a resonant sensor in cooperation with an integrated circuit in the integrated circuit substrate.   The integrated acoustic device according to claim 1, wherein the resin layer is made of benzocyclobutene (BCB) or polyimide. A first step of forming an underlayer on a semiconductor or dielectric substrate;
A second stage of applying a bonding resin material to the upper surface of the integrated circuit substrate in which the integrated circuit is configured;
A third stage in which the semiconductor or dielectric substrate is turned upside down and overlaid on the integrated circuit substrate; and
A fourth step of removing only the semiconductor or dielectric substrate leaving the underlayer on the integrated circuit substrate;
A fifth step of patterning a metal thin film on the underlayer to form a lower electrode;
Forming an acoustic device on the integrated circuit substrate from above the lower electrode;
A seventh step of forming an electrode connection part for connecting the lower electrode and the upper electrode of the acoustic device to the extraction electrode on the integrated circuit substrate in the base layer;
A method for manufacturing an integrated acoustic device, comprising:   The method of manufacturing an integrated acoustic device according to claim 10, further comprising an eighth step of removing the underlayer in a lower region of the acoustic device after the seventh step.   The method for manufacturing an integrated acoustic device according to claim 10 or 11, wherein the underlayer is silicon, silicon oxide, silicon nitride, silicon carbide, germanium, silicon germanium, titanium oxide, diamond, or sapphire. .   The method of manufacturing an integrated acoustic device according to claim 10, wherein the acoustic device is made of AlN, ScAlN, or ZnO.