JP2013211532A5

JP2013211532A5 - Semiconductor device and manufacturing method of semiconductor device

Info

Publication number: JP2013211532A5
Application number: JP2013031874A
Authority: JP
Filing date: 2013-02-21
Publication date: 2016-03-31
Anticipated expiration: 2033-02-21

Claims

A first oxide semiconductor film;
A first insulating film above the first oxide semiconductor film;
A first conductive film above the first insulating film;
A second insulating film above the first conductive film;
A second oxide semiconductor film above the second insulating film;
A third insulating film above the second oxide semiconductor film;
A second conductive film above the third insulating film,
The first oxide semiconductor film includes a channel formation region of the first transistor;
The second oxide semiconductor film includes a channel formation region of a second transistor;
The first conductive film has a region functioning as a gate electrode of the first transistor and a region functioning as a first gate electrode of the second transistor;
The second conductive film has a region functioning as a second gate electrode of the second transistor;
The first insulating film has a region between the first oxide semiconductor film and the first conductive film,
The second insulating film has a region between the second oxide semiconductor film and the first conductive film,
The semiconductor device, wherein the third insulating film has a region between the second oxide semiconductor film and the second conductive film.

Forming a first oxide semiconductor film;
Forming a first insulating film above the first oxide semiconductor film;
Forming a first conductive film on the first insulating film;
Forming a second insulating film above the first conductive film;
Forming a second oxide semiconductor film over the second insulating film;
Forming a third insulating film above the second oxide semiconductor film;
Forming a second conductive film above the third insulating film;
The first oxide semiconductor film includes a channel formation region of the first transistor;
The second oxide semiconductor film includes a channel formation region of a second transistor;
The first conductive film has a region functioning as a gate electrode of the first transistor and a region functioning as a first gate electrode of the second transistor;
The second conductive film has a region functioning as a second gate electrode of the second transistor;
The first insulating film has a region between the first oxide semiconductor film and the first conductive film,
The second insulating film has a region between the second oxide semiconductor film and the first conductive film,
The method for manufacturing a semiconductor device, wherein the third insulating film includes a region between the second oxide semiconductor film and the second conductive film.

Forming a first oxide semiconductor film;
Forming a first insulating film above the first oxide semiconductor film;
Forming a first conductive film on the first insulating film;
Forming a second insulating film above the first conductive film;
Forming a second oxide semiconductor film over the second insulating film;
Forming a third insulating film above the second oxide semiconductor film;
Forming a second conductive film above the third insulating film;
The first oxide semiconductor film or the second oxide semiconductor film is formed through a first step of removing hydrogen, water, a hydroxyl group, or a hydride and a second step of supplying oxygen. And
The first oxide semiconductor film includes a channel formation region of the first transistor;
The second oxide semiconductor film includes a channel formation region of a second transistor;
The first conductive film has a region functioning as a gate electrode of the first transistor and a region functioning as a first gate electrode of the second transistor;
The second conductive film has a region functioning as a second gate electrode of the second transistor;
The first insulating film has a region between the first oxide semiconductor film and the first conductive film,
The second insulating film has a region between the second oxide semiconductor film and the first conductive film,
The method for manufacturing a semiconductor device, wherein the third insulating film includes a region between the second oxide semiconductor film and the second conductive film.