JPS63102264A - Thin film semiconductor device - Google Patents

Thin film semiconductor device

Info

Publication number
JPS63102264A
JPS63102264A JP61247438A JP24743886A JPS63102264A JP S63102264 A JPS63102264 A JP S63102264A JP 61247438 A JP61247438 A JP 61247438A JP 24743886 A JP24743886 A JP 24743886A JP S63102264 A JPS63102264 A JP S63102264A
Authority
JP
Japan
Prior art keywords
thin film
film semiconductor
gate
gate electrode
channel forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61247438A
Inventor
Koichi Murakami
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP61247438A priority Critical patent/JPS63102264A/en
Publication of JPS63102264A publication Critical patent/JPS63102264A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

PURPOSE:To stabilize a channel forming region thereby to be able to laminate regions in a thin film semiconductor device by elevationally interposing the channel forming region of a thin film semiconductor region between gate electrodes. CONSTITUTION:A second gate electrode 22 which becomes a lower gate electrode of a first thin film semiconductor region 25 is selectively formed on a semiconductor substrate 21, and a third gate insulating film 24 is formed on the surface. A first thin film semiconductor region 25, a first gate insulating film 26, a first gate electrode 27, a second gate insulating film 28, a second thin film semiconductor layer 29, a fourth gate insulating film 30, and a third gate electrode 31 are sequentially formed thereon. The channel forming regions 34 and 37 of first and second MOS transistors 43 and 44 are elevationally interposed between upper and lower gate electrodes 27 and 22, 31 and 27, respectively. Thus, with one gate electrode as a stationary electrode the potential of the channel forming region is stabilized, and the other gate electrode can be used as a signal input electrode.
JP61247438A 1986-10-20 1986-10-20 Thin film semiconductor device Pending JPS63102264A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61247438A JPS63102264A (en) 1986-10-20 1986-10-20 Thin film semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61247438A JPS63102264A (en) 1986-10-20 1986-10-20 Thin film semiconductor device

Publications (1)

Publication Number Publication Date
JPS63102264A true JPS63102264A (en) 1988-05-07

Family

ID=17163438

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61247438A Pending JPS63102264A (en) 1986-10-20 1986-10-20 Thin film semiconductor device

Country Status (1)

Country Link
JP (1) JPS63102264A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5189310A (en) * 1989-12-05 1993-02-23 Hewlett-Packard Company BICMOS logic gate circuit and structures
US5428238A (en) * 1992-12-10 1995-06-27 Sony Corporation Semiconductor memory cell having information storage transistor and switching transistor
JPH07193251A (en) * 1993-12-27 1995-07-28 Nec Corp Thin film transistor and its manufacture
US5757047A (en) * 1995-12-14 1998-05-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
EP1494287A1 (en) 2003-07-01 2005-01-05 STMicroelectronics S.A. DRAM element with two memory cells and method of making the same
WO2007139862A2 (en) * 2006-05-22 2007-12-06 Hewlett-Packard Development Company, L. P. Integrated circuit interconnect
WO2008023776A1 (en) * 2006-08-23 2008-02-28 Nec Corporation Semiconductor device and method for manufacturing the same
US8470688B2 (en) 2007-07-11 2013-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2013149970A (en) * 2011-12-22 2013-08-01 Semiconductor Energy Lab Co Ltd Semiconductor storage device
JP2013211532A (en) * 2012-02-29 2013-10-10 Semiconductor Energy Lab Co Ltd Semiconductor device
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5189310A (en) * 1989-12-05 1993-02-23 Hewlett-Packard Company BICMOS logic gate circuit and structures
US5428238A (en) * 1992-12-10 1995-06-27 Sony Corporation Semiconductor memory cell having information storage transistor and switching transistor
JPH07193251A (en) * 1993-12-27 1995-07-28 Nec Corp Thin film transistor and its manufacture
US5567959A (en) * 1993-12-27 1996-10-22 Nec Corporation Laminated complementary thin film transistor device with improved threshold adaptability
US5933736A (en) * 1995-12-14 1999-08-03 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device
US5757047A (en) * 1995-12-14 1998-05-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
EP1494287A1 (en) 2003-07-01 2005-01-05 STMicroelectronics S.A. DRAM element with two memory cells and method of making the same
FR2857150A1 (en) * 2003-07-01 2005-01-07 St Microelectronics Sa Element integrated dynamic random access memory, and such matrix elements METHOD
US7202518B2 (en) 2003-07-01 2007-04-10 Stmicroelectronics S.A. Integrated dynamic random access memory element, array and process for fabricating such elements
US7391109B2 (en) 2006-05-22 2008-06-24 Hewlett-Packard Development Company, L.P. Integrated circuit interconnect
WO2007139862A2 (en) * 2006-05-22 2007-12-06 Hewlett-Packard Development Company, L. P. Integrated circuit interconnect
WO2007139862A3 (en) * 2006-05-22 2008-05-02 Hewlett Packard Development Co Integrated circuit interconnect
JP5544715B2 (en) * 2006-08-23 2014-07-09 日本電気株式会社 Semiconductor device and manufacturing method thereof
WO2008023776A1 (en) * 2006-08-23 2008-02-28 Nec Corporation Semiconductor device and method for manufacturing the same
US8841730B2 (en) 2007-07-11 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8470688B2 (en) 2007-07-11 2013-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2017224870A (en) * 2011-12-01 2017-12-21 株式会社半導体エネルギー研究所 Semiconductor device
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9472680B2 (en) 2011-12-01 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10043833B2 (en) 2011-12-01 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
JP2017118127A (en) * 2011-12-22 2017-06-29 株式会社半導体エネルギー研究所 A semiconductor memory device
US9368501B2 (en) 2011-12-22 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
JP2013149970A (en) * 2011-12-22 2013-08-01 Semiconductor Energy Lab Co Ltd Semiconductor storage device
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
JP2013211532A (en) * 2012-02-29 2013-10-10 Semiconductor Energy Lab Co Ltd Semiconductor device

Similar Documents

Publication Publication Date Title
EP0951071A4 (en) Semiconductor device
JPS6126261A (en) Vertical mosfet and manufacture thereof
JPS56169368A (en) High withstand voltage mos field effect semiconductor device
JPH02312280A (en) Insulated gate bipolar transistor
GB1357516A (en) Method of manufacturing an mos integrated circuit
JPH04267563A (en) Thin film semiconductor device and method of manufacturing same
JPS61171165A (en) Mos transistor
MY130168A (en) Semiconductor device and manufacturing method thereof
JPH02263473A (en) Semiconductor device and semiconductor storage device
JPH01282857A (en) Semiconductor device and manufacture of the same
JPH01255276A (en) Semiconductor device
JPS63237580A (en) Semiconductor device and manufacture of the same
KR900001394B1 (en) Super high frequency intergrated circuit device
JPH01101519A (en) Active matrix substrate
JPS62265756A (en) Thin film transistor matrix
EP0382165A3 (en) High-voltage semiconductor device having silicon-on-insulator structure with reduced on-resistance
JPH0230186A (en) Thin-film field-effect transistor and manufacture thereof
JPS6453574A (en) Semiconductor device
JPS58115850A (en) Active matrix panel
GB1447675A (en) Semiconductor devices
JPS6484669A (en) Thin film transistor
JPS6016456A (en) Semiconductor device
JPH02275672A (en) Thin film transistor
JPS63122176A (en) Semiconductor device and its manufacture
JPS60186053A (en) Thin film complementary mos circuit