JP2013210393A - Defect inspection method and defect inspection apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem that difficulty in adding signals of the same regions with sufficient accuracy caused by generation of difference in relationship between a region where a sample is irradiated with a laser and a region where detection is performed by a line sensor, because of generation of difference between a region to be irradiated and a region being actually irradiated due to height change of the sample under inspection of a defect on a surface of the sample.SOLUTION: A defect inspection method for inspecting a defect on a surface of a sample comprises a step for detecting the defect by addition processing of a detecting signal in which the amount of misalignment of a pixel of the detecting signal calculated by comparing distribution of a Haze signal and predetermined light quantity distribution is corrected.

Description

  The present invention relates to a surface defect inspection method and an inspection apparatus for inspecting minute defects existing on a sample surface with high sensitivity and high speed.

  In a production line for semiconductor substrates, thin film substrates, and the like, in order to maintain and improve product yield, inspection of defects existing on the surface of semiconductor substrates, thin film substrates, and the like is performed. As a conventional technology, “I irradiate a laser beam focused to several tens of μm on the wafer surface to collect and detect scattered light generated from the defects, and detect defects with dimensions of several tens to several μm or more. Patent Document 1 (Japanese Patent Laid-Open No. 9-304289) and Patent Document 2 (Japanese Patent Laid-Open No. 2000-162141) are known.

  Further, Patent Document 3 (Japanese Patent Application Laid-Open No. 2007-240512) discloses that “a linear illumination is performed on a wafer supported by a rotating / translating stage a plurality of times, and an illumination area is formed using an imaging optical system. In other words, a method is disclosed in which the scattered light generated from the image is imaged on a line sensor and the scattered light signals generated from the same region are added together.

JP-A-9-304289 JP 2000-162141 A JP 2007-240512 A

In recent years, LSI wiring has been rapidly miniaturized, and the size of defects to be detected is approaching the detection limit of optical inspection. According to the semiconductor roadmap, mass production of LSIs with 36 nm nodes is about to start in 2012, and the patternless wafer inspection device needs the ability to detect defects as large as DRAM half pitch. . In order to follow the miniaturization of semiconductors, it is necessary to improve the detection sensitivity of the inspection device intermittently. Here, the defects are particles adhering to the wafer, crystal defects COP (Crystal Originated Particle), scratches caused by polishing, and the like.
Depending on the methods disclosed in Patent Document 1 and Patent Document 2, there are problems such as damage to the wafer due to an increase in laser power and a decrease in throughput due to a reduction in the inspectable area per unit time. Specifically, it is known that the magnitude I of scattered light generated when a defect is illuminated with a laser has a relationship of I∝D ^ 6, where D is the particle size of the defect. However, with the recent miniaturization of LSI wiring, the defect size to be detected has been miniaturized, and thus the scattered light obtained is weak. Therefore, it is necessary to increase the scattered light generated from the fine defects. As a method of increasing the scattered light generated from the defect, there is an increase in the output of the laser. However, in the above method, the surface temperature of the laser irradiation portion on the wafer rises, and there is a risk of damaging the wafer. Further, although the scattered light to be detected can be increased by increasing the irradiation time, the area that can be inspected per unit time is reduced, resulting in a decrease in throughput. Further, depending on the method disclosed in Patent Document 3, there is a problem that the detection accuracy is lowered. Specifically, during the inspection, the wafer rotates at a high speed of several thousand RPM (Rotation Permit), and the height of the wafer itself varies with respect to the vertical direction of the wafer due to vibration and convection. In addition, the height of the wafer surface varies due to irregularities on the wafer surface. When laser is irradiated obliquely to the wafer, the laser irradiation location on the wafer changes due to the height variation of the wafer, so the area to be irradiated and the actual irradiation area are changed. A difference occurs, and a deviation occurs in the relationship between the area on the wafer irradiated with the laser and the area detected by the line sensor. For this reason, due to the wafer height variation during inspection, the correspondence between the pixels of the line sensors that detect scattered light from substantially the same region is broken, and it becomes impossible to add signals from the same region (hereinafter referred to as this subject). In the method of adding scattered light obtained by illuminating the same defect on the wafer surface a plurality of times, the defect inspection accuracy is inevitably lowered.

  The following is a brief description of an outline of typical inventions disclosed in the present application.

(1) A defect inspection method for inspecting a defect on the surface of a sample, the step of irradiating a predetermined region of the surface of the sample with illumination light having an elliptical illumination region a plurality of times, The step of receiving the scattered light from the surface with a detector capable of detecting the scattered light of a plurality of pixels arranged corresponding to the illumination area, and the scattered light from the surface of the sample each time Converting the detection signal into a detection signal, extracting a Haze signal obtained from scattered light generated from irregularities on the surface of the sample from each of the plurality of detection signals converted in the conversion step, and extracting the detection signal Comparing the distribution of the plurality of Haze signals extracted in the step with a predetermined light amount distribution, calculating a pixel shift amount for each of the plurality of detection signals, and for each of the plurality of detection signals And a step of correcting the plurality of detection signals using the pixel shift amount calculated in the above, and a step of detecting defects by adding the plurality of detection signals corrected in the correction step. This is a defect inspection method.
(2) In the defect inspection method according to (1), in the step of calculating the pixel shift amount, it is assumed that there is no distribution in the vertical direction with respect to the distribution of the plurality of Haze signals and the surface of the sample. This is a defect inspection method characterized by comparing a reference light amount distribution which is a distribution of a Haze signal obtained when illumination light is irradiated in the state.

  ADVANTAGE OF THE INVENTION According to this invention, the defect inspection method and defect inspection apparatus which test | inspect the defect which exists in the surface of a sample with high sensitivity can be provided.

It is a block diagram of the 1st Example of the defect inspection apparatus which concerns on this invention. 1 is a side view of a first embodiment of a defect inspection apparatus according to the present invention. It is a block diagram of the detection optical system of the 1st Example of the defect inspection apparatus which concerns on this invention. It is a side view of the spatial positional relationship of an illumination area | region and a line sensor. It is a top view of the positional relationship of the detection range on a sample surface. It is explanatory drawing of the positional relationship of the illumination area | region and sensor detection range in a sample surface when a pixel shift | offset | difference does not arise. It is explanatory drawing of the positional relationship of the illumination area | region and sensor detection range in a sample surface in case pixel deviation arises. It is explanatory drawing of a pixel shift | offset | difference magnitude | size and a pixel shift | offset | difference direction. It is explanatory drawing of a detection signal. It is explanatory drawing of the flow of the pattern matching using a Haze signal. It is explanatory drawing of a defect map and a Haze map. It is a modification of the first embodiment in the defect inspection apparatus according to the present invention. It is an example of the test | inspection flow in the 1st Example of the defect inspection method which concerns on this invention. In the defect inspection apparatus according to the present invention, it is a configuration diagram of the illumination optical system of the first embodiment that performs illumination so that illumination light has a non-Gaussian illuminance distribution on a sample surface. In the defect inspection apparatus which concerns on this invention, it is a block diagram of the illumination optical system of the 2nd Example which illuminates so that illumination light may become non-Gaussian illuminance distribution on a sample surface. It is a side view of the 2nd Example of the defect inspection apparatus which concerns on this invention. It is a side view explaining the positional relationship between the sample surface and the illumination area when the height of the sample varies. It is a top view of a mode that the illumination area on the sample surface changes when the height of the sample changes. It is a side view explaining regular reflection light and the advancing direction at the time of the height fluctuation of a sample. It is an example of the inspection flow in the 2nd Example of the defect inspection method which concerns on this invention. It is a top view explaining the positional relationship of the detection area | region at the time of using an illumination area | region and an area sensor on a sample surface. It is a top view of the 3rd example in a defect inspection device concerning the present invention. It is a top view explaining the 1st positional relationship of the illumination area | region and sensor detection range in a sample surface. It is a top view explaining the 2nd positional relationship of the illumination area | region and sensor detection range in a sample surface. It is a top view explaining the 3rd positional relationship of the illumination area | region and sensor detection range in a sample surface. It is a top view explaining the 4th positional relationship of the illumination area in a sample surface, and a sensor detection range.

  An example of an embodiment of a defect inspection apparatus according to the present invention will be described with reference to FIG. FIG. 1A is a plan view of an example of an embodiment of a defect inspection apparatus according to the present invention, and FIG. 1B is a side view. The defect inspection apparatus illustrated in FIG. 1 includes a wafer 1, an illumination optical system 101, detection optical systems 102 a to 102 f, a wafer stage 103, and a signal processing system 104.

(Illumination optical system 101)
The illumination optical system 101 includes a laser light source 2, a beam expander 3, a polarizing element 4, a mirror m, and a condenser lens 5. The laser beam 200 emitted from the laser light source 2 is adjusted to a desired beam diameter by the beam expander 3, converted to a desired polarization state by the polarization element 4, and then reflected by the condenser lens 5 via the reflection mirror m. The inspection area of the wafer 1 is irradiated at an elevation angle θi.
Here, in order to detect minute defects near the surface of the wafer, the laser light source 2 is desirably a laser light source that oscillates a laser beam having a short wavelength (wavelength of 355 nm or less) that is difficult to penetrate into the wafer. The illumination elevation angle θi is preferably an angle of 10 degrees from the wafer surface. The illumination area 20 has a substantially elliptical shape on the wafer surface, and is, for example, approximately 1000 μm in the major axis direction and approximately 20 μm in the minor axis direction. The beam expander 3 is an anamorphic optical system and includes a plurality of prisms. The beam diameter is changed only in one direction in a plane perpendicular to the optical axis, and spot illumination or linear illumination is performed on the wafer 1 using the condenser lens 5.

(Detection optical systems 102a to 102f)
The detection optical systems 102a to 102f are arranged in a plurality of different azimuth angle directions φ and elevation angles θs with respect to the wafer surface, and detect scattered light generated from the illumination region 20 on the wafer. The detection optical systems 102a to 102f are arranged at intervals of about 60 degrees with respect to the azimuth angle direction with respect to the wafer surface, and the arrangement azimuth angles φ of the detection optical systems 102a to 102f are 30, 90, 150, 210, 270, and 330, respectively. Degree.
Here, with respect to the azimuth angle direction φ in which a plurality of detection optical systems are arranged, the detection optical system 102a has an azimuth angle in which the angle between the optical axis 211 and the longitudinal direction 210 of the illumination region 20 is approximately 90 degrees. Arranged in the direction.

With respect to the azimuth angle direction φ in which a plurality of detection optical systems are arranged, the angle formed by the optical axis of at least one detection optical system and the longitudinal direction 210 of the illumination region 20 is arranged in the azimuth direction where the angle is approximately 90 degrees. If so, there is no limitation on the azimuth direction φ in which the remaining detection optical systems are arranged. In the case of FIG. 1, the detection optical system 102a corresponds to a detection optical system in which the longitudinal direction 210 of the illumination area 20 and the optical axis 211 of the detection optical system are orthogonal to each other. Although the reason will be described later, when pattern matching is performed using a signal based on roughness scattered light generated from surface roughness of the wafer (hereinafter referred to as a Haze signal) to detect the size of pixel shift and the direction of pixel shift, This is because the calculation is performed based on the coordinates of the signal based on the scattered light detected by the detection optical system 102a.
The detected elevation angle θs is 30 degrees from the wafer surface, and the numerical aperture is 0.3. The same applies to the detection optical systems 102b to 102f, each of which is arranged at a detection elevation angle of 30 degrees from the wafer surface and has a numerical aperture of 0.3.

The detection optical systems 102a to 102f have almost the same configuration, and FIG. 2 shows a detailed configuration of the detection optical system. The detection optical system 102 a includes an objective lens 10, a polarizing element 11, an imaging lens 12, and a line sensor 13. The illumination area 20 and the line sensor 13 are in a conjugate positional relationship, and the scattered light from the illumination area 20 is imaged on each pixel of the plurality of pixels of the line sensor 13. If the line sensors of the detection optical systems 102 a and 102 d are arranged so as to be substantially parallel to the longitudinal direction 210 of the illumination area 20, the line sensor and the illumination area 20 have a conjugate positional relationship.
The optical magnification of the objective lens 10 is a reduction system of 0.1 times. The polarization element 11 is, for example, a polarization filter or a PBS (Polarized Beam Splitter polarization beam splitter), and the roughness detection light is reduced by detecting the polarization so that a finer defect can be detected. The polarizing element 11 can be rotated around the optical axis of the detection optical system, and can be inserted and removed. NSPFU-30C manufactured by Sigma Koki Co., Ltd. may be used as the polarizing filter, and PBSW-10-350 manufactured by Sigma Koki Co., Ltd. may be used as the PBS. The line sensor 13 may use S3923-256Q manufactured by Hamamatsu Photonics. In S3924-256Q, the number of pixels is 256, the pixel pitch is 25 μm, and the pixel height is 0.5 mm.
The angle formed by the optical axis 212 of the detection optical system 102b and the longitudinal direction 210 of the illumination area 20 is about 30 degrees, and the detection is made from an elevation angle of 30 degrees. As shown in FIG. 3A, an image is formed on the surface 15 inclined by 30 degrees with respect to the optical axis. In order to correct the inclination of the image and form an image on a plane substantially perpendicular to the optical axis 212, the detection optical system may be reduced. Since this is a reduction system with an optical magnification of 0.1 of the objective lens, the inclination of the image is corrected, and an image is formed on the surface 16 substantially perpendicular to the optical axis 212. The overall optical magnification is determined by the magnification of the imaging lens 12, and the overall optical magnification of the detection optical systems 102a to 102f is 10 times.

When the line sensor 13 of the detection optical system 102b is arranged in a plane 16 perpendicular to the optical axis and parallel to the wafer 1, the illumination area 20 on the wafer 1 surface and the detection range 17 of the line sensor 13 are displayed. The positional relationship is as shown in FIG. 3B, and the angle formed by the longitudinal direction 210 of the illumination region 20 and the direction 213 in which the pixels of the line sensor are arranged is 30 degrees. In this state, not all scattered light generated from the illumination region 20 can be captured, so that the scattered light generated from the illumination region 20 can be captured by rotating the line sensor around the optical axis 212. Since the angle formed by the longitudinal direction 210 of the illumination area 20 and the direction 213 in which the pixels of the line sensor are arranged is 30 degrees, by rotating the same direction by 30 degrees, the longitudinal direction 210 of the illumination area 20 and the line The angle formed by the direction 213 in which the pixels of the sensor are lined is approximately 0 degrees, so that all the scattered light generated from the illumination area 20 can be captured and imaged on the line sensor.
Regarding the detection optical systems 102c, 102e, and 102f, the angle formed by the longitudinal direction 210 of the illumination region 20 and the direction 213 in which the pixels of the line sensor are arranged differs depending on the detection azimuth angle. Therefore, the line sensor is rotated around the optical axis according to the detected azimuth angle, and all the scattered light generated from the illumination area 20 is captured and imaged on the line sensor.

(Wafer stage 103)
As shown in FIG. 1B, the wafer stage 103 includes a chuck for holding the wafer 1 and a Z stage (not shown) for controlling the height, a rotary stage 6 for rotating the wafer, and the wafer 1 as R. It comprises a translation stage 7 for moving in the direction. The wafer stage 103 performs scanning so that the illumination region 20 illuminates the entire surface of the wafer 1 in a spiral shape by performing rotational scanning and translational scanning. Here, the height of the wafer surface at rest is defined as z = 0, and the vertically upward direction is defined as a positive direction.

(Signal processing system 104)
The signal processing system 104 includes an analog circuit 150, an A / D conversion unit 151, a pixel shift detection unit 152, a pixel shift correction unit 153, a signal addition / defect determination unit 154, a CPU 155, a map output unit 156, and an input unit 157. The

  Next, the reason why the pixel shift occurs due to the wafer height variation will be described with reference to FIG. 4A and FIG. Here, the wafer height fluctuation refers to the height fluctuation in the vertical direction of the wafer due to high-speed rotation of the wafer under inspection and unevenness of the wafer surface. Pixel shift is a region on the wafer irradiated with laser and a region detected by the line sensor due to the difference between the region to be irradiated and the region that is actually irradiated based on the wafer height variation. Refers to the displacement of the pixel. 4A shows the positional relationship between the detection range 21a of the line sensor on the surface of the wafer 1 and the illumination area 20 when viewed from the position where the detection optical system 102a is arranged, and FIG. 4B shows the detection. The positional relationship between the detection range 21b of the line sensor on the surface of the wafer 1 and the illumination area 20 when viewed from the position where the optical system 102b is arranged is shown. Here, the direction in which the pixels of the line sensor are arranged is defined as R1 direction, and the height direction of the pixels is defined as R2. R1 and R2 are orthogonal to each other.

  When the wafer height does not change, the illumination area 20 on the wafer is irradiated in both FIGS. 4A and 4B, and the positional relationship between the illumination area and the detection ranges 21a and 21b is the same. In this state, the detection ranges of the two line sensors are adjusted to approximately the same region by initial adjustment. That is, in the initial adjustment, the correspondence relationship between pixels that detect scattered light generated from substantially the same region is determined, and a signal based on the scattered light may be added during the inspection according to the correspondence relationship.

  Next, explanation will be given on the case where the wafer height fluctuates. When the wafer surface height is at z = 0, the illumination area 20 and the line sensor 13 are adjusted to be in focus, but when the wafer surface height fluctuates, the focus is adjusted. Due to the deviation, the imaging position of the scattered light generated from the illumination region 20 on the line sensor changes. Let “h” be an arbitrary constant. When the height of the wafer surface is shifted by + h μm in the z direction by rotating the wafer 1 at a high speed, the illumination area 20 is shifted to the position of the illumination area 20 ′, and the height of the wafer surface is −h μm in the z direction. In the case of a deviation, the illumination area 20 is shifted to the position of the illumination area 20 ″.

  In the example of FIG. 4A, the direction 25 in which the illumination area 20 is shifted is only the direction of R2, which is the pixel height direction. In this case, no pixel shift occurs. On the other hand, in the example of FIG. 4B, the illumination area 20 is in the direction 26 and is shifted not only in the direction of R2 but also in the direction of R1. A pixel shift occurs when the illumination region 20 is also shifted in the R1 direction. Here, pixel displacement refers to the fact that the correspondence between the pixels of the line sensors that detect scattered light from roughly the same region is broken due to the height variation of the wafer being inspected. Therefore, if the detection signals are added as they are without correcting the pixel shift, it becomes impossible to add signals from the same area, and the effect of signal amplification by signal addition is reduced. For this reason, the detection accuracy decreases.

The directions 25 and 26 of the illumination area 20 generated by the wafer height variation differ depending on the detection azimuth angle φ, and the size of the illumination area 20 varies depending on the detection elevation angle θs, the detection azimuth angle φ, and the wafer height variation. I know it ’s different. Hereinafter, the direction in which the illumination area 20 is shifted is considered as a vector, and the sign of the R1 component when it is decomposed into two components R1 and R2 is defined as the pixel shift direction, and the absolute value of the R1 component is defined as the pixel shift magnitude. The amount of pixel shift is defined as the amount of pixel shift. In the case of FIG. 4C, assuming a direction 27 in which the illumination area 20 is shifted, the pixel shift direction is negative (-: minus), and the pixel shift magnitude is the length of the line segment OA.
In the present invention, when a pixel shift occurs and the correspondence between pixels detecting scattered light generated from substantially the same region is broken, the pixel shift direction and the pixel shift size are detected by the following method. By correcting the coordinates of the detection signal, the correspondence between the pixels is corrected, the effect of signal amplification is maximized, and the detection sensitivity is improved.

(Processing in analog circuit 150 and A / D converter 151)
The line sensor 13 that irradiates the surface of the wafer with illumination light by the illumination optical system 101 of FIG. 1A and receives scattered light from the surface of the wafer generates an electrical signal corresponding to the amount of received light. Is led to the analog circuit 150. Hereinafter, processing performed in the analog circuit 150 will be described.
When the scattered light generated from the illumination area 20 is received, the line sensor 13 outputs a detection signal as shown in FIG. Roughness scattered light generated from the roughness of the wafer surface, which is unevenness on the wafer surface, is always generated during the laser irradiation period, and is detected as low-frequency swell like the roughness signal No (<several kHz). When a roughness signal (Haze signal) No enters the line sensor and undergoes photoelectric conversion, a shot noise No, which is a random fluctuation, is generated and detected simultaneously. On the other hand, since the defect scattered light So generated from the defect is generated in a pulse shape only for a short time while the illumination region 20 having an illumination width of 20 μm passes through the position where the defect exists, as shown as the defect signal So, Higher frequency than the roughness signal (> several kHz). That is, when the detection signal shown in FIG. 5 is guided to the analog circuit 150, a defect signal can be extracted by applying a high-pass filter (pass band:> several kHz) to the detection signal, and a low-pass filter (pass band: By applying <several kHz, the Haze signal can be extracted.

  From the above, the high-pass filter is applied to the defect signal that is an electric signal generated based on the defect scattered light detected by the line sensor 13, and the electric signal generated based on the roughness scattered light detected by the line sensor 13 is used. A low-pass filter is applied to a certain Haze signal. As a result, the defect signal and the Haze signal can be separated and processed. The signal subjected to the above filtering process is converted into a digital signal by the A / D converter 151 at a sampling pitch of several MHz or more. The Haze signal converted into the digital signal is input to the pixel shift detection unit 152 to detect the pixel shift size and the pixel shift direction due to the wafer height variation. A method of detecting the pixel shift magnitude and the pixel shift direction will be described with reference to FIG.

(Processing by the pixel shift detection unit 152)
FIG. 6 shows the wafer 1, the laser light source 2, the laser beam 200, the illumination area 20, the detection optical systems 102 a and 102 b, and the pixel shift detection unit 152. For example, when the illumination region 20 is illuminated with a laser beam having a Gaussian distribution, roughness scattered light corresponding to the Gaussian distribution is detected in each pixel of the line sensors of the detection optical systems 102a and 102b. Since the Haze signal low-pass filtered by the analog circuit 150 is guided to the pixel shift detection unit 152, Gaussian Haze signals 30a and 30b based on scattered light received by the detection optical systems 102a and 102b are input. Since the maximum value of the Gaussian distribution is the center of the distribution, in the initial adjustment, the center of the illumination area 20 and the center pixel of the line sensor are adjusted so as to approximately match each other. Correspondence with pixels can be established. When pixel shift occurs due to wafer fluctuation, the Gaussian distribution peak value of the Haze signal does not match the center pixel of the line sensor. Therefore, the pixel shift detection unit 152 performs pattern matching using the distribution of the Haze signals 30a and 30b, and detects a pixel shift amount such as a pixel shift size and a pixel shift direction.

Here, the difference between the pixel position at which the Gaussian distribution of the Haze signal takes a peak value (maximum value) and the center pixel of the line sensor is detected as the pixel shift amount. The barycentric coordinates of the illumination area 20 may be calculated using the detected light amount of each pixel of each line sensor, and the magnitude and direction of the deviation may be detected using the barycentric coordinates. Instead of the center pixel of the line sensor, a pixel position where the Haze signal detected by the line sensor takes a maximum value may be used. At this time, the Haze signal based on the scattered light received by the detection optical system 102a disposed at a position where the optical axis 211 is substantially orthogonal to the longitudinal direction 210 of the illumination area 20 causes pixel deviation even if the wafer height fluctuates. Since it does not occur, it can be used as a reference for detecting the pixel shift magnitude and the pixel shift direction. Alternatively, pixels that detect scattered light generated from the approximate center region of the illumination region 20 during initial adjustment may be recorded as a template, and the template may be used as a reference for detecting the magnitude and direction of pixel shift.
For the detection signals of all other detection optical systems, the pixel shift magnitude and the pixel shift direction, which are pixel shift amounts, are calculated, a pixel shift correction signal is generated, and the pixel shift correction signal is output to the pixel shift correction unit 153.

  Here, a specific example of the pixel shift correction signal is shown below. Let the coordinate system be two axes (R, θ). Consider a case where the wafer height fluctuates at θ = θ00 (arbitrary constant) and the detection signal of the detection optical system 102b detects that a pixel shift of “+5 μm in the R direction” has occurred due to pattern matching. The pixel shift correction signal in this case is as follows. For the detection signals of all the pixels of the detection optical system 102b, the coordinates in the R direction are corrected by “−5 μm” at the coordinates θ == θ00.

  In FIG. 6, the pattern matching is performed using only the Haze signal based on the scattered light received by the detection optical systems 102a and 102b, and the pixel deviation correction signal is generated. The Haze signal obtained from the detection optical system may be guided to the pixel shift detection unit 152 to generate a pixel shift correction signal for each detection signal. By generating a pixel shift correction signal for all of the obtained Hazeee signals and correcting the pixel shift of the detection signal, it becomes possible to add the detection signal more accurately and detect a defect.

(Processing in the pixel shift correction unit 153 to the input unit 157 and the map output unit 156)
The pixel shift correction unit 153 receives a defect signal and a haze signal from the AD conversion unit 151, and receives a pixel shift correction signal from the pixel shift detection unit 152. The defect signal and the Haze signal are corrected based on the pixel shift correction signal, and the pixel shift of the signal distribution is corrected. The pixel shift corrected signal is guided to the signal addition / defect determination unit 154, and the signals of the same pixels are added, and based on the added signal, defect determination / defect classification / defect size calculation by threshold processing, and Haze by level determination Processing is performed.

  Then, the defect map 160 and the haze map 161 shown in FIG. 7 are displayed on the map output unit 156 via the CPU 155. The defect map 160 is displayed based on the defect type / defect size / detected coordinates captured at the time of inspection, and the Haze map 161 is displayed based on the Haze signal level / detected coordinates captured at the time of inspection. The input unit 157 includes a user interface, and the user performs recipe setting and the like. As described above, since there are detection optical systems at a plurality of azimuth angles, when a defect inspection is performed by adding all signals based on scattered light received by the plurality of detection optical systems, the signal amplification effect Therefore, it is possible to detect a defect with high accuracy. In addition to increasing the signal amplification effect by signal addition, defect detection sensitivity can be improved by selecting the detection optical system to be used or by using the detection signal in each detection optical system with weighting. . The roughness scattered light depends on the azimuth angle depending on the roughness of the wafer surface. For example, in a wafer having a very smooth surface such as Si, roughness scattered light tends to be strongly generated in the direction in which the laser beam 200 is incident, that is, in the azimuth direction where the detection optical systems 102e and 102f exist. A wafer having a large surface roughness such as an Al deposition film has a property that roughness scattered light is strongly generated in the direction in which the laser beam 200 travels, that is, in the azimuth direction in which the detection optical systems 102b and 102c exist. By using only the detection signal detected by the detection optical system existing at the azimuth angle where the roughness scattered light is weakly generated, or by multiplying the detection signal as a gain according to the magnitude of the roughness scattered light and processing it It is possible to improve the defect detection sensitivity.

  In the above description, a method for performing pattern matching using the distribution of the Haze signals 30a and 30b with the detection optical system 102a as a reference and detecting a pixel shift amount such as a pixel shift size and a pixel shift direction has been described. As a Haze signal distribution, a reference light amount distribution which is a distribution of a Haze signal obtained when illumination light is irradiated in a state where there is no fluctuation in the vertical direction with respect to the surface of the wafer, not the detection optical system 102a. The pixel shift amount may be calculated in advance by using the reference light amount distribution as a reference. In this case, it is sufficient that there is at least one detection optical system. By using a predetermined reference light amount distribution as a reference for pattern matching, pixel deviation caused by physical positional deviation of the illumination optical system, the stage, etc. This can be taken into consideration, and an improvement in defect detection sensitivity can be realized. As described above, the pixel shift amount can be calculated by comparing the predetermined light amount distribution with the distribution of the detected Hazeee signal.

  In FIG. 1, laser illumination is performed from a direction parallel to the longitudinal direction 210 of the illumination. However, the illumination longitudinal direction 210 and the laser irradiation direction are not necessarily the same, and illumination is performed from different azimuth directions. It doesn't matter. As an advantage of illuminating from different directions, there is a point that it is possible to improve the classification performance of defects such as scratches having directionality in the defect shape. Scattered light generated from a defect that is substantially symmetric with respect to the azimuth direction, such as COP, does not have azimuth dependency and tends to be generated substantially uniformly in all azimuth directions. On the other hand, scattered light generated from defects that are not targeted with respect to the azimuth angle direction such as scratches has azimuth angle dependency. In addition, since the azimuth angle characteristics of scattered light from scratch also depend on the azimuth angle at which the illumination is incident, by changing the illumination direction actively and comparing the signals present in each azimuth angle direction, the defect classification accuracy and It is possible to improve the dimension calculation accuracy.

  FIG. 8 is an example of a side view of the embodiment shown in FIG. In FIG. 8, the oblique illumination optical system 101 that performs illumination from a low elevation angle θi, the low angle detection optical system 102g that performs scattered light detection in a low elevation angle direction θs, and the high angle that performs detection from a higher elevation angle than the low angle detection optical system. A detection optical system 102h exists. Regarding the oblique illumination optical system, there may be a vertical illumination optical system (not shown) for illuminating the wafer from a substantially vertical direction.

  At this time, detection signals based on scattered light respectively received by the detection optical systems 102g and 102h having different elevation angles with respect to the wafer surface are respectively input to the analog circuit 150, and thereafter the same as in the signal processing system of FIG. Is processed.

Although the embodiment in which the illumination optical system and the plurality of detection optical systems exist in different elevation angles has been described above, the following two points are mainly cited as the advantages of the defect inspection apparatus having such a configuration. First, as a first effect, when the particles adhering to the wafer are illuminated with the oblique illumination optical system, the scattering cross section for the particles can be made larger than that of the vertical illumination optical system. As a result, the amount of scattered light generated from the particles increases, and even finer defects can be detected. In addition, scattered light from defects with a size of several tens of nm is strongly scattered on the low elevation angle side, and scattered light from defects with a size of 100 nm or more is strongly scattered on the high elevation angle side. By detecting with a detection optical system and detecting a relatively large defect with a high elevation angle detection optical system, it is possible to increase the range of defect sizes that can be detected. On the other hand, for a dent defect on a wafer such as COP or scratch, when the illumination is performed with a vertical illumination optical system, the scattering cross-sectional area becomes larger, so that the sensitivity to the dent defect can be improved. Moreover, since the scattered light from the dent defect is strongly scattered toward the high elevation angle side, the detection sensitivity can be further improved by using the high elevation angle detection optical system. As described above, the intensity distribution and elevation angle characteristics of the scattered light generated from the defect change according to the type (particle, COP, scratch, etc.) and size of the defect. By combining and comparing, it is possible to improve defect classification accuracy and defect size calculation accuracy.
Further, as a second effect, with respect to the processing method of the detection signal detected by each detection optical system in a plurality of azimuth angles and a plurality of elevation angle directions, addition or averaging processing is performed on each detection signal. Addition increases the amount of light detected, which is effective in improving detection sensitivity.By averaging, the range of sizes that can be detected within the dynamic range of the sensor increases, and the effect of expanding the dynamic range is achieved. is there.

Although the laser light source 2 has been described as a light source that oscillates at a wavelength of 355 nm, a laser light source that oscillates a visible, ultraviolet, or vacuum ultraviolet laser beam may be used. Although the illumination area 20 has a substantially elliptical shape on the wafer surface and has been described as an example having a size of approximately 1000 μm in the major axis direction and approximately 20 μm in the minor axis direction, it needs to be elliptical. There is no limit on size.
Although FIG. 1 illustrates an embodiment in which six detection optical systems exist in different azimuth angle directions φ, the number of detection optical systems need not be limited to six. There are no restrictions on the detected azimuth angle φ and the detected elevation angle θs.
The objective lens 10 has been described with an example of an optical magnification of 0.1 times, but there is no limitation on the magnification. Further, although the example of the optical magnification of 10 times as the whole of the detection optical systems 102a to 102f has been described, there is no limitation on this as well. The numerical apertures of the detection optical systems 102a to 102f do not need to be substantially the same in all the detection optical systems and do not need to be all different.
The illumination optical system 101 has been described as an example in which illumination is performed by combining the expander 3 and the condenser lens 5. However, linear illumination may be performed using a cylindrical lens. When a cylindrical lens is used alone, it is possible to perform linear illumination on the wafer without changing the beam diameter only in one direction in a plane perpendicular to the optical axis using an anamorphic optical system. This is effective in that the beam expander 3 can be omitted and the optical system can be slimmed. The line sensor 13 is used to receive scattered light and photoelectrically convert it, and is a high-powered combination of a multi-anode photomultiplier tube, a TV camera, a CCD camera, a photodiode, a linear sensor, or an image intensifier. A sensitive image sensor or the like may be used. For example, by using a two-dimensional sensor, a wide area can be inspected at a time. The line sensor has been described with 256 pixels and a pixel size of 25 μm, but there are no restrictions on the number of pixels and the pixel size.

The method of detecting the pixel shift magnitude and the pixel shift direction in the pixel shift detection unit 152 has been described in the case where the illumination intensity distribution is a Gaussian distribution. However, the illumination intensity distribution is not limited to the Gaussian distribution. For example, as shown in FIG. 10, a laser beam 200 is divided into a laser beam 201 and a laser beam 202 by a birefringent element 40 such as a Wollaston prism, and the two divided laser beams are illuminated in an adjacent region, thereby obtaining a Gaussian distribution. Thus, it is possible to perform illumination having an illuminance distribution 41. In this case, a Haze signal 42 having two peak values is detected for each pixel of the line sensor. Further, as shown in FIG. 11, a laser beam 203 having a desired illuminance distribution and beam shape is generated by passing through a mask 43, and modulated illumination is performed by reducing and illuminating the adjusted laser beam 203 on the wafer. 44 can be performed. At this time, the haze signal 45 having a steeper peak value than when the illumination is performed with a Gaussian distribution is detected by the line sensor.
Furthermore, the illumination 44 modulated using DOE (Diffraction Optical Elements) may be performed without using the mask 43. When DOE is used, it is possible to generate modulated illumination with an arbitrary illuminance distribution and shape by simply replacing the condensing lens 5 with DOE without using the mask 43. Therefore, the mounting space of the illumination optical system This is advantageous in that it can be reduced.

As described above, by performing illumination having an illuminance distribution and beam shape different from the Gaussian distribution, a Haze signal characteristic of the Gaussian distribution is detected, and pattern matching is performed based on the detected Haze signal, thereby performing pattern matching with higher accuracy. Thus, the pixel shift size and the pixel shift direction can be detected with higher accuracy.
There are a plurality of low-angle detection optical systems 102g and high-angle detection optical systems 102h in different azimuth angle directions φ, and the elevation angles at which they are arranged need not be substantially the same, and all do not have to be different. . The numerical apertures of the low angle detection optical system 102g and the high angle detection optical system 102h need not be substantially the same in all detection optical systems, and need not be different from each other.
The pixel shift correction unit 152 generates a pixel shift correction signal and the pixel shift correction unit 153 corrects the coordinates of the detection signal based on the pixel shift correction signal. However, the following processing may be performed. Absent.
When the pixel shift detection unit 152 detects the pixel shift magnitude and the pixel shift direction, an added pixel correction signal is generated if the shift magnitude is equal to or greater than a specified value. As a specific example, if the size of the pixel shift is 2.5 μm or more corresponding to one pixel of the line sensor on the wafer surface, a signal for shifting the addition pixel by one pixel is generated. If the pixel shift size is 5.0 μm or more corresponding to 2 pixels, a signal for shifting the addition pixel by 2 pixels is generated. A value obtained by adding the direction of pixel shift to the size of the added pixel shift is called an added pixel correction signal, which is output from the pixel shift detection unit 152.

  When the added pixel correction signal is generated by the pixel shift detection unit 152, the pixel shift correction unit 153 does not perform coordinate correction processing. The signal addition / defect determination unit performs signal addition by switching the pixels to be added based on the addition pixel correction signal. Next, the defect detection processing flow will be described with reference to FIG.

  First, the wafer 1 is set on the stage, and an inspection recipe is set (step 170). Inspection is started (step 171), and the surface of the wafer is irradiated (step 172). Next, scattered light from the wafer surface is received by the line sensor (step 173), and the scattered light from the wafer surface is converted into a detection signal (step 174). The converted detection signal is separated into a defect signal obtained from scattered light generated from defects on the wafer surface and a Haze signal obtained from scattered light generated from irregularities on the wafer surface (step 175), and distribution and detection of the Haze signal are detected. The light amount distribution obtained by the optical system 102a is compared (step 176), and a pixel shift amount such as a pixel shift size and a pixel shift direction of the detection signal is calculated (step 177). Then, a pixel shift correction signal is transmitted based on the calculated pixel shift amount (step 178), and the pixel shift of the detection signal is corrected based on the pixel shift correction signal (step 179). In the signal addition / defect determination unit 154, signals at the same coordinates are added (step 180), and based on the added signal, defect determination, defect classification, dimension calculation, and haze processing are performed (step 181), and the defect map and the haze are processed. A map is displayed (step 182).

  Here, when adding the signals of the same coordinates, a plurality of detection signals based on scattered light obtained by irradiating the substantially same region of the wafer surface a plurality of times may be added. Detection signals based on scattered light received by the detection optical systems arranged in different azimuth directions may be added. When adding a plurality of detection signals based on scattered light received by detection optical systems arranged in different azimuth directions with respect to the wafer surface, the same region on the wafer surface may be irradiated at least once. Here, in the embodiment of the defect inspection apparatus according to the present invention, the illumination area on the wafer surface irradiated by the illumination optical system is fixed, but the stage supporting the wafer rotates and translates and detects while moving. Since the scattered light is detected by the optical system, the positional relationship between the wafer surface and the illumination area changes spirally. Therefore, “irradiating a substantially same area on the wafer surface a plurality of times” refers to irradiating an arbitrary area including a predetermined portion on the wafer surface (referred to as a “predetermined area”) a plurality of times. That is, it is not essential to irradiate the same region every time, and there is no problem even if the irradiated region changes as long as a predetermined region including a predetermined portion is irradiated. Further, in order to irradiate a predetermined area on the wafer surface a plurality of times, the distance that the stage translates during one rotation of the wafer needs to be shorter than the length in the major axis direction (longitudinal direction) of the illumination area. is there. Further, when all the detection signals are added every time, a large signal amplification effect can be obtained. Furthermore, defect detection may be performed using a detection signal obtained by correcting pixel shift for a single detection signal. In this case, the amount of pixel shift is corrected, and the position of the defect can be detected with high accuracy.

  FIG. 9 shows a method of calculating the pixel shift amount such as the pixel shift size and the pixel shift direction of the detection signal by comparing the distribution of the Haze signal with the light amount distribution obtained by the detection optical system 102a. Instead of step 176 and step 177, a step of calculating the pixel shift amount by comparing the distribution of the Haze signal with a predetermined light amount distribution such as a predetermined reference light amount distribution may be included. Here, the reference light amount distribution is a light amount distribution obtained when it is assumed that there is no variation in the Z-axis direction with respect to the wafer surface. As an example, the reference light amount distribution is the scattered light detected in a state where the wafer is not rotated and translated. A detection signal obtained based on the above may be used. As another example, a light amount distribution in which the light amount has a maximum value at the center of a plurality of pixels may be assumed. Further, the predetermined light amount distribution can be obtained when it is assumed that there is no fluctuation in the Z-axis direction with respect to the wafer surface, such as the detection optical system 102a or the reference light amount distribution, even if it is not the reference light amount distribution. A distribution other than the above-mentioned reference light amount distribution may be used as long as it corresponds to the light amount distribution to be obtained.

A second embodiment of the present invention will be described with reference to FIG. FIG. 12 includes a wafer 1, an illumination optical system 101, a detection optical system 102, a wafer stage 103, a signal processing system 104, an illumination area observation optical system 105, and a regular reflection light observation optical system 106.
Detailed configurations of the illumination optical system 101, the detection optical system 102, and the wafer stage 103 are substantially the same as those shown in FIG.

  In the second embodiment, the magnitude of the wafer height variation and the detection signal based on the scattered light received by at least one of the illumination area observation optical system 105 and the specular reflection light observation optical system 106 as described below and The variation direction is detected, the pixel displacement detection unit 152 calculates the pixel displacement size and the pixel displacement direction based on the magnitude and direction of the wafer height variation, and the pixel displacement correction unit 153 performs the pixel displacement correction. And Details of the detection method using the illumination area observation optical system 105 and the specular reflection light observation optical system 106 will be described below.

(Processing of illumination area observation optical system 105 and regular reflection light observation optical system 106)
(1) The position deviation size and direction of the illumination area are detected using the illumination area observation optical system 105, and the wafer height fluctuation is detected. (2) The position of the regular reflection light using the specular reflection light observation optical system 106. The displacement size and direction are detected to detect the wafer height fluctuation. The method (1) will be described with reference to FIGS. 13 and 14.
FIG. 13 is an enlarged side view of a region where the laser beam 200 is incident on the wafer 1 at an incident angle θi and the illumination region 20 is generated on the surface of the wafer 1 in FIG. When the wafer height does not fluctuate, the wafer surface exists at a height of z = 0, and when the wafer surface height fluctuates by + h μm, the position where the laser beam 200 and the wafer 1 intersect changes. Therefore, an illumination area 55 is generated on the wafer. Similarly, when the wafer surface height changes by −h μm, the position where the laser beam 200 and the wafer 1 intersect changes, so that an illumination area 56 is generated on the wafer. That is, the position of the illumination area to be generated on the wafer surface changes due to the wafer height variation.

FIG. 14 is a plan view of the region of FIG. Actually, the illumination areas 20, 55, and 56 exist on the same θ coordinate, but in FIG. 14, the beam position is intentionally shifted in the θ direction for explanation. When the wafer height variation occurs, it can be seen that when the periphery of the irradiated region is observed from the direction perpendicular to the wafer 1, the illumination region is observed to be shifted in the R direction. At this time, between the positional deviation of the illumination area: D and the wafer height fluctuation magnitude: h, D = h / cos θi (Equation 1)
There is a relationship. It means that the smaller the illumination elevation angle θi to the wafer 1, the larger the positional deviation D of the illumination area when the height variation of the wafer occurs. Roughness scattered light is generated from the illumination areas 20, 55, and 56, and the roughness scattered light is detected using the illumination area observation optical system 105. Thereby, it is possible to detect the positional deviation D of the illumination area caused by the wafer height variation. By using (Equation 1), it is possible to calculate from the positional deviation D of the illumination region whether the wafer height fluctuates: h or up and down.

  Next, the method (2) will be described with reference to FIG.

FIG. 15 is an enlarged view of the side surface of the region in FIG. 12 where the laser beam 200 is incident on the wafer 1 at an elevation angle θi and the specularly reflected light 204 is incident on the PSD 52. FIG. 14 shows a case where the wafer surface height fluctuates by z = −h μm. When the height of the wafer varies as shown in FIG. 14, the position of the specularly reflected light incident on the PSD 52 changes. Since an electrical signal is output from the PSD 52 according to the incident position, the regular reflection is caused by the variation in the wafer height with reference to the incident position of the regular reflection light 204 when the wafer surface height is at the position of z = 0. It is possible to detect how much the incident position of light has shifted. If the magnitude of the deviation of the regular reflection light detection position output from the PSD 52 is X,
X = 2 · h · cos θi (Formula 2)
There is a relationship.

  The detection position deviation magnitude X of the regular reflection light 204 from the wafer 1 is detected using the regular reflection light observation optical system 106, and by using (Equation 2), the wafer height fluctuation magnitude: h or up or down It is possible to calculate whether the direction has changed.

(Processing of signal processing system 104)
The configuration of the signal processing system 104 in FIG. 12 is substantially the same as that of the signal processing system 104 of the defect inspection apparatus shown in FIG. The difference is that the wafer height fluctuation magnitude and the fluctuation direction detected by any one of the reflected light detection observation optical system 106 are input. The pixel shift magnitude and the pixel shift direction are geometrically calculated from a trigonometric function using three directions: an azimuth angle direction φ where the detection optical system is arranged, an elevation angle direction θs, and a wafer height fluctuation magnitude h. The pixel shift size P is
P = h · sin θs / tanφ (Expression 3)
It becomes. Based on (Equation 3), the pixel shift detection unit 152 calculates the pixel shift size and the pixel shift direction for each detection optical system from the parameters of the azimuth angle φ, the elevation angle θs, and the wafer height variation magnitude h. A pixel shift correction signal is generated and output to the pixel shift correction unit 153.

  Next, the defect detection processing flow will be described with reference to FIG. First, the wafer 1 is set on the stage, and an inspection recipe is set (step 280). Inspection is started (step 281), and the wafer surface is irradiated (step 282). Next, scattered light from the wafer surface is received by the line sensor (step 283), and the scattered light from the wafer surface is converted into a detection signal (step 284). The converted detection signal is separated into a defect signal obtained from scattered light generated from defects on the wafer surface and a Haze signal obtained from scattered light generated from irregularities on the wafer surface (step 285). Next, by observing the position of the illumination area with the illumination area observation optical system 105, the magnitude and direction of the wafer height variation are detected (step 286). Alternatively, the size / direction of the wafer height variation is detected by observing the position of the regular reflection light with the regular reflection light observation optical system 106 (step 287). Based on the magnitude / direction of the wafer height variation detected by either means of step 286 or step 287, the pixel deviation magnitude / pixel deviation direction for each detector is calculated (step 288). Based on the calculated pixel shift amount, a pixel shift correction signal for each detector is transmitted (step 289). The pixel shift correction unit 153 corrects the pixel shift of the detection signal based on the pixel shift correction signal (step 290). The signal addition / defect determination unit 154 adds signals of the same coordinates (step 291). Based on the added signal, defect determination, defect classification, dimension calculation, and haze processing are performed (step 292), and a defect map and a haze map are displayed (step 293).

  Here, as in the first embodiment, when adding signals of the same coordinates, a plurality of detection signals based on scattered light obtained by irradiating the substantially same region on the wafer surface a plurality of times may be added. A plurality of detection signals based on scattered light received by detection optical systems arranged in different azimuth directions with respect to the wafer surface may be added. Further, when all these detection signals are added, a large signal amplification effect can be obtained. Furthermore, defect detection may be performed using a detection signal obtained by correcting pixel shift for a single detection signal. In this case, the amount of pixel shift is corrected, and the position of the defect can be detected with high accuracy.

  Although FIG. 12 has been described with an example in which there is only oblique illumination that performs illumination from a low elevation angle θi and one detection optical system, even if there is a vertical illumination optical system that performs illumination from a substantially vertical direction on the wafer. I do not care. Although an example in which only the detection optical system 102 arranged at the detection elevation angle θs exists has been described, a plurality of detection optical systems may be arranged in a plurality of elevation angle directions. There are no restrictions on the elevation angle and numerical aperture of a plurality of detection optical systems. As shown in FIG. 1, there are a plurality of detection optical systems 102 in different azimuth angle directions φ, and the elevation angles at which they are arranged do not have to be substantially the same, and all do not have to be different. Similarly, the azimuth angle is not limited. The CCD camera 51 is used for receiving and photoelectrically converting the roughness scattered light, and includes I-CCD (Intensified-CCS), EM-CCD (Electron Multiplexing-CCD), EEB-CCD (Electron Bomberment-CCD), A two-dimensional multi-anode photomultiplier tube, a two-dimensional avalanche photodiode array, or a highly sensitive sensor combining an image intensifier and an area sensor may be used. Since the scattered light generated from the surface roughness is very weak, it is advantageous in that roughness scattered light from a wafer with less surface roughness can be detected by using a highly sensitive sensor. The CCD camera 51 does not need to be the XC-EU 50, and there is no limitation on the model number of the CCD used.

FIG. 12 shows a configuration in which both the illumination region observation optical system 105 and the specular reflection light observation optical system 106 are mounted. In practice, at least one of the above optical systems is mounted. If so, the defect inspection flow shown in FIG. 16 can be performed.
Although an example of detecting the magnitude and direction of the wafer height variation using the illumination area observation optical system 105 or the specular reflection light observation optical system 106 has been described, the area sensor instead of the line sensor 13 as described below. May be used to detect the magnitude and direction of the wafer height variation.

  Consider a case where the detection azimuth angle φ at which the detection optical system 102 is disposed is approximately 90 degrees, and an area sensor is used as the photoelectric conversion element in the detection optical system 102. For the area sensor, S8665-0909 manufactured by Hamamatsu Photonics may be used. The number of pixels is 512 × 512 pixels, and the pixel size is 24 × 24 μm.

  FIG. 17 shows the positional relationship between the illumination area 20 on the wafer surface and the detection range 57 of the area sensor. When the wafer height fluctuates and the height of the wafer surface is shifted to the height of z = h, the illumination area 20 is shifted to the position of the illumination area 20 ′, and the height of the wafer surface is a height of z = −h. At this time, the illumination area 20 is shifted to the position of the illumination area 20 ″. When the illumination area 20 is displaced due to the wafer height variation, the pixels for detecting the scattered light generated from the illumination area are displaced, so that the magnitude and direction of the wafer height variation can be detected based on the displacement of the detected pixels.

  Specifically, the following examples can be considered. When illumination with one or two or more peak values such as a Gaussian distribution is performed, the size and direction of wafer height variation are detected based on the number of pixel movements that maximize the amount of light detected. can do. Alternatively, the center of illumination intensity may be obtained with respect to the R2 axis, and the magnitude and direction of wafer height fluctuation may be detected based on the number of moving pixels.

  When illumination with a uniform illuminance distribution is performed, the magnitude and direction of wafer height fluctuation can be detected based on the number of pixels that the central pixel of the illumination area moves with respect to the R2 axis.

  In the second embodiment, the example of calculating the pixel shift size and the pixel shift direction based on the size and direction of the wafer height variation and performing the coordinate correction has been described, but as shown in the first embodiment, Instead of the pixel shift correction signal, an addition pixel correction signal may be generated, and the pixel to be added may be corrected based on the generated pixel correction signal.

  A third embodiment of the present invention will be described with reference to FIG. Detailed configurations of the illumination optical system 101, the detection optical system 104, and the wafer stage 103 are substantially the same as those shown in FIG.

  In the first embodiment, in the detection optical system 102a in which the angle formed by the longitudinal direction 210 of the illumination area 20 and the optical axis 211 is approximately 90 degrees, pixel deviation does not occur even if the wafer height changes. In the detection optical system 102b in which the angle formed by the longitudinal direction 210 of the illumination area and the optical axis 212 is not approximately 90 degrees, it has been described that pixel deviation occurs when the wafer height fluctuates.

  However, by rotating the line sensor around the optical axis of the detection optical system and making the direction 26 of the illumination area shifted due to the wafer height variation approximately coincide with the pixel height direction, the occurrence of pixel shift can be avoided. Is possible. FIGS. 19A and 19B show the positional relationship between the illumination area 20a on the wafer surface and the detection ranges 21c and 21d of the detection optical system 102b. The height of the wafer surface is shifted by + h μm in the z direction. In this case, the illumination area 20a is shifted to the position of the illumination area 20a ′, and when the height of the wafer surface is shifted by −h μm in the z direction, the illumination area 20a is shifted to the position of the illumination area 20a ″. . Here, the longitudinal direction 210 of the illumination is defined as the R3 axis.

If the angle formed by the R3 axis and the direction 26 in which the illumination shifts due to the wafer height variation is ψ,
ψ == φ
And does not depend on the detected elevation angle.
Here, the height direction of the pixel of the line sensor is defined as the R4 axis, and the line sensor is rotated until the angle formed by R3 and R4 reaches ψ, thereby shifting the illumination region caused by the wafer height variation 26 And the height direction of the pixels substantially coincide with each other, and pixel deviation can be prevented from occurring. Since the magnitude of ψ also changes depending on the azimuth angle φ at which the detection optical system is arranged, an angle for rotating the line sensor is set for each detection optical system. However, in the state of FIG. 19A, even if a defect passes through the regions 60a and 60b and scattered light is generated, there is no intersecting region between the regions 60a and 60b and the detection range 21c of the line sensor. Scattered light cannot be detected and defects are overlooked. In order to avoid missing a defect, it is necessary to use a line sensor having a larger pixel height, or to reduce the optical magnification only in the height direction of the pixel. ) The detection range 21d with the line sensor described can be generated. By doing so, it is possible to detect scattered light even if the defect passes through the regions 60a and 60b, and it is possible to achieve both avoidance of pixel shift due to wafer height variation and avoidance of defect oversight.
In order to change the optical magnification only in the pixel height direction, an anamorphic optical system or the like may be used.

  FIG. 20A shows the positional relationship between the illumination area 20, the detection range 21e of the detection optical system 102a, and the detection range 21d of the detection optical system 102b on the wafer. However, both the detection optical systems 102a and 102b are optically reduced by the same magnification in the pixel height direction, and the line sensor of the detection optical system 102b is rotated by ψ as shown in FIG. 18 so that no pixel shift occurs. The positional relationship is the case.

As a result, pixel shift does not occur in the detection optical systems 102a and 102b, but it can be seen that the sizes of the detection range 21d and the detection range 21e on the wafer surface are different. The detection area 21d in the detection range 21d is "1 / sin ψ" times as large as the detection range 21e, and it becomes difficult to add scattered light generated from substantially the same region.
For this, the detection range may be approximately matched by setting the magnification of the detection optical system 102a to “sin ψ” times that of the detection optical system 102b. In FIG. 20 (b), the magnification of the detection optical system 102a is reduced to “sin ψ” times so as to coincide with the detection range 21d of the detection optical system 102b, so that pixel deviation and defect oversight can be avoided.
In order to make the detection ranges of the detection range 21e and the detection range 21f coincide with each other, the optical magnification of the detection optical system 102b may be made to coincide with each other by “1 / sinφ” times. In this embodiment, the signal processing system 104 does not include a pixel shift detection unit and a pixel shift correction unit. This is because it is possible to avoid the occurrence of pixel shift by rotating the line sensor around the optical axis of the detection optical system, so that it is not necessary to deal with pixel shift in the signal processing system.

  Although FIG. 18 illustrates an embodiment in which six detection optical systems exist in different azimuth angle directions φ, the number need not be six. There is no restriction on the azimuth angle between the detectors. Similarly, there is no restriction on the illumination elevation angle and the elevation angle direction in which the detection optical system is arranged.

  As described above, according to the embodiment of the present invention, by performing pattern matching using the Haze signal detected by each detection optical system, the pixel shift size and the pixel shift direction are detected, and the pixel shift size and the pixel shift are detected. By correcting the coordinates of the detection signal based on the direction, scattered light signals generated from substantially the same region can be accurately added.

In addition, by monitoring the displacement of the illumination area and by monitoring the specularly reflected light of the laser beam applied to the wafer, the magnitude and direction of the wafer height variation can be detected, and the coordinates of the detection signal can be determined based on that signal. By correcting, scattered light signals generated from substantially the same region can be accurately added.
Further, according to the azimuth angle φ where the detection optical system is arranged, by rotating the line sensor around the optical axis, and adjusting the optical magnification of the detection optical system according to the azimuth angle φ, Occurrence of pixel shift due to wafer height variation can be avoided.
In the above-described embodiment, the wafer has been described as an example of the inspection target, but a sample other than the wafer may be used as long as it is a sample such as a semiconductor substrate or a thin film substrate. In addition, the line sensor capable of detecting a plurality of pixels has been described as an example of the detection optical system, but there is no problem as long as the detector can detect a plurality of pixels such as an area sensor.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the above embodiment, and various modifications can be made without departing from the scope of the invention. Not too long.

DESCRIPTION OF SYMBOLS 1 Wafer, 2 Laser light source, 3 Beam expander, 4 Polarizing element, m Mirror, 5 Condensing lens, 6 Rotating stage, 7 Translation stage, 10 Objective lens, 11 Polarizing element, 12 Imaging element, 13 Line sensor, 15・ 16 Image plane, 20 ・ 20 ′ ・ 20 ′ ′ ・ 55 ・ 56 Illumination area, 17 ・ 21a ～ 21f Detection range of line sensor on wafer surface, 25 ・ 26 ・ 27 Illumination area moves due to wafer height fluctuation Direction, 30a / 30b Haze signal, 40 Birefringence element, 41 Illuminance distribution, 42/45 Haze signal, 43 Mask, 44 Deformation illumination area, 50 Microscope unit, 51 CCD camera, 52 PSD, 57 Area sensor on wafer surface Detection range, 60a / 60b inspection area, 101 illumination optical system, 102 / 102a-102h detection Optical system, 103 wafer stage, 104 signal processing system, 105 illumination area observation optical system, 106 specular reflection light observation optical system, 150 analog circuit, 151 A / D conversion unit, 152 pixel shift detection unit, 153 pixel shift correction unit, 154 Signal addition / defect determination unit, 155 CPU, 156 map output unit, 157 input unit, 160 defect map, 161 haze map, 170-189 inspection flow, 200-203 laser beam, 204 specular reflection light, 210 longitudinal direction of illumination , 211, 212 Optical axis of detection optical system, 213 Direction in which pixels of line sensor are arranged

  (1) An irradiation step of irradiating a sample with illumination light having an elliptical illumination region, and a detector capable of detecting scattered light from the sample and a plurality of pixels arranged corresponding to the illumination region. A scattered light detection step of detecting the regular reflection light from the sample, a conversion step of converting the scattered light detected in the scattered light detection step into a detection signal, and the regular reflection A detection signal correction step for correcting the detection signal converted in the conversion step based on the specular reflection light detected in the light detection step, and a defect in the sample is detected based on the detection signal corrected in the detection signal correction step. And a defect detection step.

Claims (14)

A defect inspection method for inspecting defects on the surface of a sample,
Irradiating illumination light having an elliptical illumination area on the surface of the sample; and
Receiving scattered light from the surface of the sample by a detector capable of detecting scattered light of a plurality of pixels arranged corresponding to the illumination region;
Converting scattered light received by the detector into a detection signal;
Extracting a Haze signal obtained from scattered light generated from irregularities on the surface of the sample from the detection signal;
Calculating a pixel shift amount based on the distribution of the Haze signal;
Correcting the detection signal using the pixel shift amount to detect a defect;
A defect inspection method characterized by comprising: A defect inspection method for inspecting defects on the surface of a sample,
Irradiating a predetermined area of the surface of the sample with illumination light having an elliptical illumination area a plurality of times;
Receiving scattered light from the surface of the sample each time by a detector capable of detecting scattered light of a plurality of pixels arranged corresponding to the illumination area;
A step of converting scattered light from the surface of the sample each time into a detection signal each time;
Extracting a Haze signal obtained from scattered light generated from irregularities on the surface of the sample from each of the plurality of detection signals converted in the converting step;
Comparing the distribution of the plurality of Haze signals extracted in the extracting step with a predetermined light amount distribution, and calculating a pixel shift amount for each of the plurality of detection signals;
Correcting the plurality of detection signals using a pixel shift amount calculated for each of the plurality of detection signals;
Adding a plurality of detection signals corrected in the correcting step to detect defects;
A defect inspection method characterized by comprising: The defect inspection method according to claim 2,
In the step of calculating the pixel shift amount, the distribution of the plurality of Haze signals and the Haze signal obtained when irradiation with illumination light is performed under the assumption that there is no variation in the vertical direction with respect to the surface of the sample. A defect inspection method comprising comparing a reference light amount distribution which is a distribution. The defect inspection method according to claim 2 or 3,
In the light receiving step, the defect inspection method includes receiving light by a plurality of detectors arranged in a plurality of azimuth directions with respect to the surface of the sample. The defect inspection method according to claim 4,
In the step of calculating the pixel shift amount, the distribution of the plurality of Haze signals is compared with the distribution of the Haze signal obtained from the scattered light received by one selected among the plurality of detectors. Defect inspection method characterized by The defect inspection method according to claim 5,
The selected one detector is a detector arranged so that an optical axis of scattered light detectable by the one detector is in a direction substantially orthogonal to a longitudinal direction of the illumination region. Defect inspection method. A defect inspection method according to any one of claims 4 to 6,
In the defect detection step, the defect detection method is characterized in that the defect is detected by adding all detection signals from the plurality of detectors. A defect inspection method according to any one of claims 4 to 6,
A defect inspection method, wherein, in the step of detecting a defect, a defect is detected using a detection signal from a part of detectors selected from the plurality of detectors. A defect inspection method according to any one of claims 2 to 8,
In the step of calculating the pixel shift amount, each of the plurality of detection signals is compared by comparing a pixel having a maximum value with respect to the distribution of the plurality of Haze signals with a pixel having a maximum value of a predetermined light amount distribution. A defect inspection method characterized by calculating a pixel shift amount for. A defect inspection method for inspecting defects on the surface of a sample,
Irradiating illumination light having an elliptical illumination area on the surface of the sample; and
Receiving light from the surface of the sample by a detector capable of detecting light of a plurality of pixels arranged corresponding to the illumination area;
Converting light received by the detector into a detection signal;
Correcting the detection signal so as to reduce the amount of pixel shift and detecting defects;
A defect inspection method characterized by comprising: A defect inspection apparatus for inspecting defects on the surface of a sample,
An illumination optical system for irradiating illumination light having an elliptical illumination area on a predetermined area of the surface of the sample;
Detection optics comprising: a detector capable of detecting scattered light of a plurality of pixels from the surface of the sample by illumination light of the illumination optical system; and a conversion circuit for converting the scattered light detected by the detector into a detection signal. The system,
A Haze signal obtained from scattered light generated from unevenness on the surface of the sample is extracted from the detection signal, and the pixel shift amount of the detection signal is determined by comparing the distribution of the Haze signal with a predetermined light amount distribution. A signal processing system comprising: a pixel shift detection unit to calculate; and a defect determination unit that detects a defect by correcting the detection signal based on the pixel shift amount;
A defect inspection apparatus comprising: The defect inspection apparatus according to claim 11,
As the predetermined light amount distribution, a reference light amount distribution that is a distribution of a Haze signal obtained when illumination light is irradiated under the assumption that there is no variation in the vertical direction with respect to the surface of the sample is used. Defect inspection equipment. The defect inspection apparatus according to claim 11 or 12,
The defect inspection apparatus, wherein the detection optical system includes a plurality of detectors arranged in a plurality of azimuth directions with respect to the surface of the sample. The defect inspection apparatus according to claim 13,
2. The defect inspection apparatus according to claim 1, wherein the predetermined light amount distribution is a distribution of a Haze signal obtained from scattered light received by one detector selected from the plurality of detectors.

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