JP2013205729A - Integrated circuit device, electro-optic device, and electronic equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an integrated circuit device capable of high-quality image display irrespective of temperature change, an electro-optic device, and electronic equipment.SOLUTION: An integrated circuit device 100 includes a temperature detection circuit 140 that performs detection of environmental temperature by using a temperature detection element RTH outside the integrated circuit device 100, a control unit 130 that performs display control of an electro-optical panel 12 and control of the temperature detection circuit 140, a temperature detection monitor terminal TTS that is connected to the temperature detection element RTH, a ground terminal TGND, and an interface terminal group TGIF that is connected to a host device 310. The ground terminal TGND is arranged between the temperature detection monitor terminal TTS and the interface terminal group TGIF.

Description

  The present invention relates to an integrated circuit device, an electro-optical device, an electronic apparatus, and the like.

  An EPD (Electrophoretic Display) panel is known as an electro-optical panel. In the active EPD panel, it is necessary to measure the environmental temperature with high accuracy in order to change the drive waveform in accordance with the environmental temperature. In addition, an EPD panel for multi-gradation display is required to measure the environmental temperature with higher accuracy.

  For example, Patent Document 1 discloses a technique for measuring a temperature by detecting a leakage current of a transistor. However, this method has a problem that accurate temperature measurement is difficult due to noise generated from an interface circuit or the like.

JP 2011-75999 A

  According to some embodiments of the present invention, it is possible to provide an integrated circuit device, an electro-optical device, an electronic apparatus, and the like that can display a high-quality image even when the temperature changes.

  One aspect of the present invention is a temperature detection circuit that detects an environmental temperature using a temperature detection element outside an integrated circuit device, a control unit that performs display control of the electro-optic panel and control of the temperature detection circuit, A temperature detection monitor terminal connected to the temperature detection element; a ground terminal; and an interface terminal group connected to the host device, wherein the ground terminal is between the temperature detection monitor terminal and the interface terminal group. Related to the integrated circuit device.

  According to one aspect of the present invention, the ground line connected to the ground terminal can be disposed between the wiring connected to the temperature detection monitor terminal and the signal line connected to the interface terminal group. Due to the shielding effect of the ground wire, it is possible to reduce the influence of noise generated from signals input / output via the interface terminal group on the detection of the environmental temperature. As a result, temperature detection with high accuracy becomes possible, so that even when the environmental temperature changes, high-quality image display or the like becomes possible.

  In one aspect of the present invention, it includes a boost external connection terminal group connected to an external boost voltage generating element of the integrated circuit device, and the ground terminal includes the temperature detection monitor terminal and the boost external connection terminal. You may arrange | position between groups.

  In this way, the ground line connected to the ground terminal can be arranged between the wiring connected to the temperature detection monitor terminal and the wiring connected to the boosting external connection terminal group. The effect of noise generated from the signal output from the boosting external connection terminal group on the detection of the environmental temperature can be reduced by the line shielding effect. As a result, it is possible to detect the temperature with high accuracy, and it is possible to display a high-quality image even when the environmental temperature changes.

  In one aspect of the present invention, the boost voltage generating element is a boost circuit element that generates a power supply voltage of a gate driver that drives a gate line of the electro-optical panel, and the boost external connection terminal group includes: The booster circuit element may be connected.

  In this way, the boosting circuit element can be connected to the boosting external connection terminal group to generate the power supply voltage of the gate driver.

  In one aspect of the present invention, the device includes a source driver unit that drives a source line of the electro-optical panel, and an internal booster circuit that generates a power supply voltage of the source driver unit. The boosting capacitor may be a flying capacitor, and the boosting external connection terminal group may be connected to the flying capacitor.

  In this way, the flying capacitor can be connected to the boosting external connection terminal group to generate the power supply voltage of the source driver unit.

  In one aspect of the present invention, the temperature detection element is a thermistor, the ground terminal is connected to one end of the thermistor, and the temperature detection monitor terminal is connected to the other end of the thermistor. May be.

  In this way, since the resistance value of the thermistor changes with temperature, the ambient temperature can be detected using the thermistor.

  In one aspect of the present invention, the temperature sensor includes a reference voltage terminal that outputs a reference voltage for temperature detection, one end of a temperature detection resistor element is connected to the other end of the thermistor, and the reference voltage terminal The other end of the temperature detection resistor element may be connected, and a voltage obtained by dividing the reference voltage by the temperature detection resistor element and the thermistor may be input to the temperature detection monitor terminal.

  In this way, the environmental temperature can be detected by detecting the voltage at the temperature detection monitor terminal.

  In one embodiment of the present invention, the control unit controls the temperature detection circuit so that the temperature detection circuit performs temperature detection in a period different from a display control period of the electro-optical panel. May be.

  In this way, the temperature detection circuit can detect the temperature without being affected by fluctuations in the power supply voltage accompanying the operation of the driver circuit or the like that drives the electro-optical panel. It becomes possible.

  In the aspect of the invention, the temperature detection circuit may be disposed in the integrated circuit device with another circuit interposed between the temperature detection circuit and the control unit.

  In this way, since the temperature detection circuit can be arranged away from the control unit, the influence of the operation of the control unit on the operation of the temperature detection circuit can be reduced.

  In the aspect of the invention, the temperature detection circuit may be disposed without interposing another circuit between the temperature detection circuit and the first short side of the integrated circuit device.

  According to this configuration, since no other circuit is arranged between the temperature detection circuit and the first short side, the influence of the operation of the other circuit on the operation of the temperature detection circuit can be reduced.

  According to another aspect of the invention, the display memory block may include a display memory block that stores image data displayed on the electro-optical panel, and the display memory block may be disposed between the temperature detection circuit and the control unit. .

  In this way, by arranging the display memory block between the temperature detection circuit and the control unit, the influence of the operation of the control unit on the operation of the temperature detection circuit can be reduced.

  In the aspect of the invention, the electro-optical panel is an electrophoretic panel, the temperature detection element is the temperature detection element for the electrophoretic panel, and the display state of the electrophoretic panel is changed to the first display state. A waveform information storage unit for storing drive waveform information to be changed from the first display state to the second display state, and the control unit selects the drive waveform information corresponding to an environmental temperature based on a detection result of the temperature detection unit Then, control for driving the electrophoretic panel may be performed based on the selected driving waveform information.

  In this way, the control unit can perform control to drive the electrophoretic panel based on the drive waveform information selected corresponding to the environmental temperature, so that a high-quality image can be obtained even when the environmental temperature changes. Display is possible.

  According to another aspect of the present invention, there is provided a glass substrate on which an electro-optical panel is formed, an integrated circuit device that is mounted on the glass substrate and drives the electro-optical panel, and between the integrated circuit device and the host device. The integrated circuit device includes a temperature detection monitor terminal, and includes the temperature detection monitor terminal and the temperature detection. The flexible circuit board includes a flexible substrate on which a signal line is wired and a temperature detection element mounted on the flexible substrate. The element relates to an electro-optical device connected by wiring on the glass substrate and wiring on the flexible substrate.

  According to another aspect of the present invention, the temperature detection element can be mounted on a flexible substrate closer to the electro-optic panel than the main substrate on which the host device is mounted, so that the ambient temperature can be detected more accurately. Can do. As a result, high-quality image display can be performed even when the environmental temperature changes.

  In another aspect of the present invention, the integrated circuit device includes a ground terminal and an interface terminal group connected to the host device, and the ground terminal includes the temperature detection monitor terminal and the interface terminal group. It may be arranged between.

  In this way, the ground line connected to the ground terminal can be arranged between the wiring connected to the temperature detection monitor terminal and the signal line connected to the interface terminal group. Due to the shielding effect, it is possible to reduce the influence of noise generated from signals input / output via the interface terminal group on the detection of the environmental temperature, thereby enabling highly accurate temperature detection.

  In another aspect of the present invention, the device includes a boost voltage generating element mounted on the flexible substrate, and the integrated circuit device includes a boost external connection terminal group connected to the boost voltage generating element, The ground terminal may be disposed between the temperature detection monitor terminal and the boost external connection terminal group.

  In this way, the ground line connected to the ground terminal can be arranged between the wiring connected to the temperature detection monitor terminal and the wiring connected to the boosting external connection terminal group. The effect of noise generated from the signal output from the boosting external connection terminal group can be reduced by the line shielding effect, so that highly accurate temperature detection is possible.

  In another aspect of the present invention, the temperature detection element may be a thermistor.

  In this way, since the resistance value of the thermistor changes with temperature, the ambient temperature can be detected using the thermistor.

  Another aspect of the invention relates to an electronic apparatus including any of the electro-optical devices described above and the host device.

2 is a basic configuration example of a pixel of an electro-optical panel. The figure explaining operation | movement of an electrophoresis microcapsule. An example of a sub-frame drive waveform. 2 shows a basic configuration example of an integrated circuit device and an electro-optical device. The structural example of a temperature detection circuit. The figure explaining operation | movement of a temperature detection circuit. An example of a timing chart of each signal of the temperature detection circuit. An example of a timing chart of a Ready signal and a command. 3 is a detailed configuration example of a boosted voltage generating element. 2 shows a configuration example of an internal booster circuit and a boosted voltage generating element. An example of terminal arrangement and circuit arrangement in an integrated circuit device. An example of implementation of an electronic device. Configuration example of an electronic device.

  Hereinafter, preferred embodiments of the present invention will be described in detail. The present embodiment described below does not unduly limit the contents of the present invention described in the claims, and all the configurations described in the present embodiment are indispensable as means for solving the present invention. Not necessarily.

1. FIG. 1 shows a basic configuration example of pixels of an electro-optical panel (EPD (Electrophoretic Display) panel, electrophoretic panel) driven by the integrated circuit device of the present embodiment. As shown in FIG. 1, the pixel 20 of the EPD panel includes an electrophoretic microcapsule 30, a pixel selection transistor 22, a storage capacitor 24, a pixel electrode 26, and a counter electrode (common electrode) 28. The pixel selection transistor 22 has a gate line (scanning line) 14 connected to the gate, a source line (data line) 16 connected to the source, and a drain connected to the storage capacitor 24 and the pixel electrode 26. The EPD panel includes a plurality of pixels 20, a plurality of gate lines 14, and a plurality of source lines 16. As will be described later, the gate line 14 is driven by a gate driver 220, and the source line 16 is driven by a source driver unit 110 included in the integrated circuit device 100 of the present embodiment.

  FIG. 2 is a diagram for explaining the operation of the electrophoresis microcapsule 30 of the EPD panel. As shown in FIG. 2, a counter electrode (common electrode) 28 facing the plurality of pixel electrodes 26 formed on the active matrix substrate is formed on a counter substrate (not shown), and an electro-optic material is formed between the two substrates. A plurality of microcapsules 30 forming an electrophoretic layer are provided. Each microcapsule 30 includes positively charged black particles 32 and negatively charged white particles 33 floating in the fluid 31.

  Here, the counter electrode 28 can be held at a predetermined voltage. The voltage applied to the pixel electrode 26 can be controlled by using the gate line 14 and the source line 16 in FIG. When the electric field is positive, the black particles 32 move in the direction of the counter electrode 28 as shown in the microcapsule 30a. As a result, the pixel 20 viewed from the transparent counter electrode 28 side becomes black. Conversely, when the electric field is negative, the white particles 33 move in the direction of the counter electrode 28 as shown in the microcapsule 30b, and as a result, the pixel 20 viewed from the counter electrode 28 side becomes white. The microcapsule 30c shows a pixel that completely displays gray other than white or black. For example, to generate a pixel having black, white or gray, a sequence of voltage pulses is applied to the pixel electrode 26. When the display of the electro-optical panel 12 is updated, a driving waveform voltage is applied to the pixel 20 via the source line 16. The specific waveform to be applied is selected based on the display state after the update of the pixel 20 and the display state before the update.

  By applying voltage pulses of appropriate polarity, duration, and amplitude to the pixel electrode 26, the pixel 20 can be driven to black, white, or a dark gray intensity. The voltage pulse applied to the pixel 20 can be modulated in duration, amplitude, or both duration and amplitude, depending on environmental information such as temperature and waveform mode.

  FIG. 3 shows an example of a subframe drive waveform for driving the EPD panel. The pixels 20 of the EPD panel are driven by a pulse train as shown in FIG. The pulse train is composed of a plurality of pulses, and is also called a “waveform” or a “voltage transition sequence”. The application time of a single pulse corresponds to one subframe (SF). The pulse train (waveform) can be composed of several tens to several tens of subframes.

2. Integrated Circuit Device and Electro-Optical Device FIG. 4 shows a basic configuration example of the integrated circuit device 100 and the electro-optical device 200 of this embodiment. An integrated circuit device 100 shown in FIG. 4 includes a source driver unit 110, a boost control circuit 120, a control unit 130, a temperature detection circuit 140, a waveform information storage unit 150, a host I / F (interface) unit 160, a display memory block 170, It includes an internal booster circuit 180, a temperature detection monitor terminal TTS, a reference voltage terminal TRF, a ground terminal TGND, an interface terminal group TGIF, and a boost external connection terminal group TGBST. The electro-optical device 200 includes an electro-optical panel (electrophoresis panel, EPD panel) 12, an integrated circuit device 100, a boosted voltage generation element 210, a gate driver 220, a temperature detection element RTH, and a temperature detection resistance element RS. Note that the integrated circuit device 100 and the electro-optical device 200 of the present embodiment are not limited to the configuration in FIG. 4, and some of the components are omitted, replaced with other components, or other components are added. Various modifications can be made such as.

  The source driver unit 110 drives the plurality of source lines 16 of the electro-optical panel 12 under the control of the control unit 130. The source driver unit 110 is configured by a transistor having a breakdown voltage (for example, 30 V) lower than the breakdown voltage (for example, 40 V) of the transistors that constitute the gate driver 220.

  The boost control circuit 120 performs boost control of the internal boost circuit 180 and the external boost voltage generating element 210. The internal booster circuit 180 outputs the high potential side power supply voltage (for example, 15V) VSH and the low potential side power supply voltage (for example, −15V) VSL of the source driver unit 110 based on the boost control of the boost control circuit 120. The power supply voltages VSH and VSL for the source driver unit 110 are also used as boost reference voltages for the boost voltage generation element 210. The boost control circuit 120 outputs a boost clock signal to the internal boost circuit 180, and outputs a boost clock signal to the boost voltage generation element 210 via the boost external connection terminal group TGBST.

  The boosting external connection terminal group TGBST is connected to the boosting voltage generating element 210. The boosted voltage generating element 210 is, for example, a capacitor, a diode, or an inductor, and the high potential side power supply voltage (for example, 20 V) VGH and the low potential side power supply voltage of the gate driver 220 that drives the gate line of the electro-optical panel 12. This is an element for a booster circuit that generates (for example, −20 V) VGL. Further, the boosted voltage generating element 210 may be a flying capacitor for the internal booster circuit 180. A detailed configuration example of the boosted voltage generating element 210 will be described later.

  The control unit 130 performs display control of the electro-optical panel 12 and control of the temperature detection circuit 140. Specifically, for example, display data (image data) is received from the host device 310 via the host I / F unit 160, the ambient temperature detection control is performed for the temperature detection circuit 140, and the source driver unit 110 and the gate are controlled. The driver 220 is controlled.

  The control unit 130 controls the temperature detection circuit 140 so that the temperature detection circuit 140 detects the temperature in a period different from the display control period of the electro-optical panel 12 (at a shifted timing). The display control period is a period during which the integrated circuit device 100 and the gate driver 220 output a drive signal to the electro-optical panel 12. Specifically, the source driver unit 110 applies a drive signal voltage through the source line 16 under the control of the control unit 130, and the gate driver 220 applies the pixel selection transistor 22 through the gate line 14 under the control of the control unit 130. This is a period in which the pixel electrode 26 is set to a desired voltage by being turned on.

  The temperature detection circuit 140 detects the environmental temperature using the temperature detection element RTH outside the integrated circuit device 100. The temperature detection circuit 140 receives the detection voltage VTS from the temperature detection element RTH via the temperature detection monitor terminal TTS. The temperature detection circuit 140 includes an A / D conversion circuit that performs analog-digital conversion on the voltage value of the detection voltage VTS. Details of the temperature detection circuit 140 will be described later.

  The waveform information storage unit 150 stores drive waveform information for changing the display state of the electrophoretic panel (electro-optical panel) 12 from the first display state to the second display state. The first display state is, for example, the state shown in the microcapsule 30a in FIG. 2 (a state in which black is displayed), and the second display state is, for example, the state shown in the microcapsule 30b in FIG. Is displayed). The control unit 130 selects drive waveform information corresponding to the environmental temperature based on the detection result of the temperature detection circuit 140. The source driver unit 110 drives the source line 16 of the electrophoresis panel 12 based on the selected drive waveform information.

  The host I / F (interface) unit 160 performs communication with the host device 310 via the interface terminal group TGIF. The host I / F (interface) unit 160 is, for example, a serial interface, an MPU interface that generates an internal pulse for each access from the host device and accesses the memory, or an RGB interface that writes RGB data of a moving image using a dot clock. is there. The host device 310 is, for example, a display controller, and transmits image data, control commands, and the like to the control unit 130 via a host I / F (interface) unit 160.

  The display memory block 170 stores image data displayed on the electro-optical panel 12.

  The gate driver 220 drives the gate line 14 of the electro-optical panel 12 under the control of the control unit 130 included in the integrated circuit device 100.

  The temperature detection element RTH is an electrophoretic panel temperature detection element, for example, a thermistor. One end of the temperature detection element (thermistor) RTH is connected to the ground terminal TGND, and the other end is connected to one end of the temperature detection resistance element RS and the temperature detection monitor terminal TTS. The other end of the temperature detecting resistance element RS is connected to the reference voltage terminal TRF.

  In the EPD panel, the source driver unit 110 drives the source line 16 with a drive waveform as shown in FIG. 3, for example. Since the pixels of the EPD panel 12 have temperature characteristics, it is necessary to measure the environmental temperature and use a drive waveform corresponding to the environmental temperature. In addition, the EPD panel for multi-gradation display requires temperature detection with higher accuracy than in the case of binary display. Therefore, an electrophoretic panel temperature detection element RTH is provided to detect the environmental temperature and select a driving waveform corresponding to the detected environmental temperature. Specifically, drive waveform information is stored in the waveform information storage unit 150, and the control unit 130 selects drive waveform information corresponding to the environmental temperature based on the detection result of the temperature detection circuit 140.

  When the boost control circuit 120 performs boost control, a boost clock signal is output from the boost external connection terminal group TGBST. When the host I / F unit 160 performs communication with the host device 310, data signals and the like are input / output via the interface terminal group TGIF. When noise generated from these signals is superimposed on the detection voltage VTS from the temperature detection element RTH, accurate temperature detection becomes difficult. Therefore, as will be described later, in the integrated circuit device 100 and the electro-optical device 200 of this embodiment, the boosting external connection terminal group TGBST and the interface terminal group TGIF are set so that the temperature detection is not affected by noise from these signals. Is placed.

  FIG. 5 shows a configuration example of the temperature detection circuit 140 of the present embodiment. The temperature detection circuit 140 includes an A / D conversion circuit that performs analog-digital conversion on the detection voltage VTS from the temperature detection element (thermistor) RTH. The A / D conversion circuit includes a ladder resistor element RA, switch elements SW1 to SWn (n is an integer of 2 or more), and a comparator CMP. Note that the temperature detection circuit 140 of the present embodiment is not limited to the configuration of FIG. 5, and various components such as omitting some of the components, replacing them with other components, and adding other components. Variations are possible.

  A reference voltage VRF (for example, 2V) is applied to one end of the ladder resistance element RA, and the other end is connected to the ground node GND. The ladder resistor element RA is provided with n taps, and the corresponding switch element among the switch elements SW1 to SWn is connected to each tap.

One of the switch elements SW <b> 1 to SWn is set to an on state based on the comparison voltage setting information AD from the control unit 130, and the other is set to an off state. By doing so, a voltage corresponding to the comparison voltage setting information AD among the n voltages divided by the ladder resistor element RA is input as the comparison voltage VA to the inverting input node (−) of the comparator CMP. . For example, when the reference voltage VRF is 2V and the digital value AD is expressed by 9 bits, n = 2 ⁹ = 512, and one of 512 voltages in the range of 0V to 2V is selected. , Input to the comparator CMP.

  A detection voltage VTS, which is a voltage at one end of the thermistor RTH (temperature detection element 230 in a broad sense), is input to the non-inverting input node (+) of the comparator CMP, and the detection voltage VTS and the comparison voltage VA are compared. The When VTS> VA, the comparator CMP outputs an H level (high potential level) as the comparator output CMPOUT. On the other hand, when VTS <VA, L level (low potential level) is output as the comparator output CMPOUT.

  The control unit 130 outputs the comparison voltage setting information AD based on the comparator output CMPOUT, and sets the comparison voltage VA. Then, the comparison voltage setting information AD is updated based on the comparison result CMPOUT between the set comparison voltage VA and the detection voltage VTS. The comparison voltage setting information AD is further updated based on the comparison result CMPOUT between the comparison voltage VA corresponding to the updated comparison voltage setting information AD and the detection voltage VTS. By performing successive comparison in this way, a digital value corresponding to the detected voltage VTS, that is, temperature information converted into a digital value can be obtained.

  The control unit 130 can set the operation of at least some of the temperature detection circuits 140 to a non-operation state during the display control period. Specifically, in the display control period, the operation of the A / D conversion circuit included in the temperature detection circuit 140 is set to a non-operation state. For example, the control unit 130 can set the operation of the comparator CMP to a non-operation state during the display control period by outputting the control signal CMPON to the comparator CMP.

  One end of the thermistor RTH (temperature detection element) is connected to the resistance element RS, and the other end is connected to the ground node GND. A reference voltage VRF is applied to one end of the resistance element RS. A voltage (detection voltage) VTS obtained by dividing the reference voltage VRF by the temperature detection resistor element RS and the thermistor RTH is input to the temperature detection monitor terminal TTS. Since the resistance value of the thermistor RTH changes depending on the environmental temperature, the detection voltage VTS that is a voltage divided by the resistance element RS and the thermistor RTH also changes depending on the environmental temperature. Therefore, the environmental temperature can be measured by measuring the voltage value of the detection voltage VTS.

  FIG. 6 is a diagram for explaining a detection operation by successive comparison of the temperature detection circuit 140 shown in FIG. The horizontal axis indicates the number of comparisons, and the vertical axis indicates the comparison voltage setting information AD (9 bits).

  As shown in FIG. 6, first, the control unit 130 sets AD to 100h (hexadecimal number 100). Since the voltage value corresponding to 100h is larger than the detection voltage VTS, the comparator CMP outputs the L level as CMPOUT in the first comparison. The control unit 130 sets AD to 080h based on the comparison result. Since the voltage value corresponding to 080h is smaller than the detection voltage VTS, the comparator CMP outputs an H level as CMPOUT in the second comparison. The control unit 130 sets AD to 0C0h based on the comparison result. Since the voltage value corresponding to 0C0h is larger than the detection voltage VTS, the comparator CMP outputs L level as CMPOUT in the third comparison. By repeating the comparison in this way, for example, 0A3h can be obtained as the digital value corresponding to the detected voltage VTS by the ninth comparison, that is, the temperature information converted into the digital value.

  FIG. 7 is an example of a timing chart of each signal of the temperature detection circuit 140. FIG. 7 shows the power supply voltage VDD, the reference voltage VRF, the control signal CMPON, the comparison voltage setting information AD (9 bits), and the comparator output signal CMPOUT of the integrated circuit device 100.

  After the power supply voltage VDD rises, the reference voltage VRF rises and AD is set to an initial value 000h. At this time, since the control signal CMPON is at L level, the comparator CMP is in a non-operating state. Next, the control signal CMPON is set to the H level, the comparator CMP is activated, and the detection voltage VTS is compared with the comparison voltage VA. AD is an initial value 000h, and the comparator output signal CMPOUT is at the H level. Next, AD is set to 100h, and CMPOUT becomes L level. The control unit 130 latches this at the timing t1. Then, AD is set to 080h, CMPOUT becomes H level, and the control unit 130 latches it at timing t2. Thus, the comparison is repeated, and finally AD is set to 0A3h. After the final AD value is determined, the control signal CMPON is set to the L level, and the comparator CMP becomes inoperative.

  FIG. 8 is an example of a timing chart of a Ready signal and a command communicated between the integrated circuit device 100 and the host device 310 according to the present embodiment. The Ready signal is transmitted from the integrated circuit device 100 to the host device 310. While the Ready signal is at the H level, the host device 310 can transmit a command. However, when the Ready signal is at the L level, the host device 310 cannot transmit the command.

  As shown in FIG. 8, the host device 310 transmits a panel writing command during the period when the Ready signal is at the H level, and the control unit 130 performs display control of the electro-optical panel 12 based on the panel writing command. The control unit 130 sets the Ready signal to the L level during the display control period (display control period). Then, the Ready signal is returned to the H level after the end of the display control period. When the Ready signal returns to the H level, the host device 310 can transmit a temperature detection command. The control unit 130 performs temperature detection control based on the received temperature detection command, and sets the Ready signal to L level during the temperature detection period. In this way, temperature detection can be performed in a period different from the display control period (at a shifted timing).

  Note that the integrated circuit device 100 of the present embodiment is not limited to the configuration using the Ready signal as shown in FIG. For example, in a configuration that does not use the Ready signal, the host device 310 may transmit a temperature detection command during the display control period. In this case, the control unit 130 controls the temperature detection after the display control period ends. Just do it.

  FIG. 9 shows a detailed configuration example of the boosted voltage generating element 210. A boosting voltage generating element 210 shown in FIG. 9 is a boosting circuit element for generating power supply voltages VGH and VGL of the gate driver 220, and includes diodes DA1, DA2, DB1, DB2 and capacitors CA1, CA2, CA3, CB1, Includes CB2 and CB3. Note that the boosted voltage generating element 210 of the present embodiment is not limited to the configuration of FIG. 9, and some of the components are omitted, replaced with other components, or other components are added. Various modifications are possible.

  9 constitutes first and second booster circuits (charge pump circuits), and the high-potential-side power supply voltage (for example, 20V) VGH and the low-potential-side power supply voltage (for example, the gate driver 220). −20V) Output VGL respectively.

  The first diode DA1 (DB1) is provided between the boost reference voltage terminal TVSH (TVSL) and the first node NA1 (NB1). The second diode DA2 (DB2) is provided between the first node NA1 (NB1) and the voltage output node NGH (NGL).

  The first capacitor CA1 (CB1) is provided between the boosting clock terminal TVCKH (TVCKL) and the first node NA1 (NB1). The second capacitor CA2 (CB2) is provided between the voltage output node NGH (NGL) and the ground node GND. The third capacitor CA3 (CB3) is provided between the boost reference voltage terminal TVSH (TVSL) and the ground node GND.

  The boosting clock signal VCKH is a clock signal whose L level (low potential level) is 0 V (GND level) and H level (high potential level) is VA (> 0 V). The boost reference voltage VSH is a high-potential side power supply voltage (for example, 15 V) of the source driver unit 110.

  The boosting clock signal VCKL is a clock signal having an L level (low potential level) of −VA and an H level (high potential level) of 0 V (GND level). The boost reference voltage VSL is a low-potential-side power supply voltage (for example, −15 V) of the source driver unit 110.

  The first booster circuit operates as follows. During the period in which the boosting clock signal VCKH is at the L level (0 V), the voltage VSH-VF is applied to the capacitor CA1, and charges corresponding to this voltage are accumulated. Further, the voltage VSH-2 × VF is applied to the capacitor CA2, and charges corresponding to this voltage are accumulated. Here, VF is a forward voltage of the diodes DA1 and DA2.

  Next, during the period in which the boosting clock signal VCKH is at the H level, that is, the voltage VA, the potential of the boosting clock terminal TVCKH is raised to VA, so that the potential of the node NA1 rises to VSH−VF + VA. As a result, the charge of the capacitor CA1 moves to the capacitor CA2 via the diode DA2, and the potential of the voltage output node NGH rises. By repeating this, a voltage of VSH + VA−2 × VF is generated at the voltage output node NGH. In this manner, the first booster circuit generates the high-potential-side power supply voltage VGH = VSH + VA−2 × VF for the gate driver 220. For example, when VSH = 15V, VA = 6V, and VF = 0.5V, VGH = 20V.

  The operation of the second booster circuit is the same as the operation of the first booster circuit except that the direction of current and the polarity of charge are reversed, and thus detailed description thereof is omitted. The second booster circuit generates the low-potential-side power supply voltage VGL = VSL−VA + 2 × VF for the gate driver 220. For example, when VSL = −15V, VA = 6V, and VF = 0.5V, VGL = −20V.

  FIG. 10 shows a configuration example of the internal booster circuit 180 and the boosted voltage generating element 210. 10 is a flying capacitor for the internal booster circuit 180, and includes a plurality of capacitors CC1, CC2, CC3, CC4...

  Internal booster circuit 180 includes a primary booster circuit BST1, a secondary booster circuit BST2, and a tertiary booster circuit BST3. These booster circuits BST1 to BST3 are connected to the flying capacitors CC1, CC2, CC3, CC4... Via the boosting external connection terminal group TGBST. The internal booster circuit 180 generates the power supply voltages VSH and VSL of the source driver unit 110 based on the boost control of the boost control circuit 120.

  FIG. 11 shows an example of terminal arrangement and circuit arrangement in the integrated circuit device 100 of this embodiment. As described above, an EPD panel, particularly a multi-tone display EPD panel, requires high-accuracy temperature detection. However, the boost clock signal output from the boost external connection terminal group TGBST and the interface terminal group TGIF are When noise due to a data signal input / output via the signal is superimposed on the detection voltage VTS from the temperature detection element RTH, accurate temperature detection becomes difficult. Therefore, in the integrated circuit device 100 according to the present embodiment, for example, the terminal arrangement and the circuit arrangement shown in FIG.

  The ground terminal TGND is disposed between the temperature detection monitor terminal TTS and the reference voltage terminal TRF and the interface terminal group TGIF. In this manner, the ground line connected to the ground terminal is converted into a plurality of signals connected to the wiring connected to the temperature detection monitor terminal TTS, the wiring connected to the reference voltage terminal TRF, and the interface terminal group TGIF. It can be placed between the lines. As a result, the influence of noise generated from the data signal input / output via the interface terminal group TGIF on the detection voltage VTS can be reduced by the shielding effect of the ground line.

  The ground terminal TGND is disposed between the temperature detection monitor terminal TTS and the reference voltage terminal TRF and the boosting external connection terminal group TGBST. Thus, the ground line connected to the ground terminal is connected to the wiring connected to the temperature detection monitor terminal TTS, the wiring connected to the reference voltage terminal TRF, and the boosting external connection terminal group TGBST. It can arrange | position between several wiring. As a result, the effect of noise generated from the boosting clock signal output from the boosting external connection terminal group TGBST on the detection voltage VTS can be reduced by the shielding effect of the ground line.

  The temperature detection circuit 140 is disposed in the integrated circuit device 100 with another circuit interposed between the temperature detection circuit 140 and the control unit 130. Here, the other circuit is a circuit that is included in the integrated circuit device 100 and has a specific function, and is a circuit excluding the temperature detection circuit 140 and the control unit 130. For example, the display memory block 170 is disposed between the temperature detection circuit 140 and the control unit 130. By doing so, the temperature detection circuit 140 can be arranged away from a circuit that generates noise, such as the control unit 130, and thus the influence of noise on the operation of the temperature detection circuit 140 is reduced or minimized. can do.

  In addition, the temperature detection circuit 140 may be arranged without interposing another circuit between the first short side SE1 of the integrated circuit device 100. In this way, since no other circuit is arranged between the temperature detection circuit 140 and the first short side SE1, the influence of noise generated from other circuits on the operation of the temperature detection circuit 140 is reduced. can do. Further, by arranging a circuit that generates noise, such as the control unit 130, on the second short side SE2 side facing the first short side SE1, the influence of noise can be further reduced.

  Further, each circuit such as the temperature detection circuit 140, the boost control circuit 120, the display memory block 170, and the control unit 130 is moved from the first short side SE1 side to the second short side SE2 side, that is, the first short side SE2. You may arrange | position along the long side LE which cross | intersects side SE1. In this way, since the terminals such as the temperature detection monitor terminal TTS, the reference voltage terminal TRF, and the ground terminal TGND can be arranged on the long side, on the glass substrate GLS connecting the terminals and the flexible substrate FLX. Can be shortened.

  The integrated circuit device 100 is mounted on a glass substrate GLS on which the electro-optical panel 12 is formed. The integrated circuit device 100 and the host device 310 are connected by a plurality of signal lines LGIF wired on the flexible substrate FLX.

  The temperature detection element (thermistor) RTH is mounted on the flexible substrate FLX, and the temperature detection monitor terminal TTS and the temperature detection element RTH are connected by wiring on the glass substrate GLS and wiring on the flexible substrate FLX.

  The boosting voltage generating element 210 is mounted on the flexible substrate FLX, and the boosting external connection terminal group TGBST and the boosting voltage generating element 210 are connected by wiring on the glass substrate GLS and wiring on the flexible substrate FLX. .

  The ground wiring LGND is provided between the temperature detection element RTH and the boosted voltage generation element 210 on the flexible substrate FLX. A plurality of ground terminals TGND may be provided, and a plurality of ground wirings LGND may be provided.

  As described above, according to the integrated circuit device 100 and the electro-optical device 200 of this embodiment, the environmental temperature can be accurately measured, and display control can be performed based on the measured temperature. Even if it changes, it becomes possible to display a high-quality image.

3. Electronic Device FIG. 12 shows an example of mounting the electronic device 300 of the present embodiment. The electronic apparatus 300 includes an electro-optical device 200, a host device 310, a main substrate MB, a flexible substrate FLX, and a glass substrate GLS. The electro-optical device 200 includes an electro-optical panel 12, an integrated circuit device 100, a gate driver 220, and a temperature detection element RTH. Note that the electronic apparatus 300 of the present embodiment is not limited to the configuration of FIG. 12, and various modifications such as omitting some of the components, replacing them with other components, and adding other components. Implementation is possible.

  The electro-optical panel 12 is formed on the glass substrate GLS, and the integrated circuit device 100 and the gate driver 220 are mounted on the glass substrate GLS.

  The host device 310 is mounted on the main substrate MB and connected to the integrated circuit device 100 via a plurality of signal lines LGIF provided on the flexible substrate FLX.

  FIG. 13 shows a configuration example of the electronic device 300 of the present embodiment. The electronic apparatus 300 includes an electro-optical panel 12, a host device 310, an integrated circuit device 100, an operation unit 320, a storage unit 330, and a communication unit 340. Various modifications such as omitting some of these components and adding other components are possible.

  The electro-optical panel 12 is for displaying various images (information) as an output device of the electronic apparatus 300, and is, for example, an EPD panel or an ECD panel. The operation unit 320 is for a user to input various information, and can be realized by various buttons, a keyboard, and the like. The storage unit 330 stores various types of information such as image data, and can be realized by a RAM, a ROM, or the like. The communication unit 340 performs communication processing with the outside.

  Note that examples of the electronic device realized by the present embodiment include various devices such as an electronic card (credit card, point card, etc.), electronic paper, a remote control, a clock, a mobile phone, a portable information terminal, and a calculator. it can.

  Although the present embodiment has been described in detail as described above, it will be easily understood by those skilled in the art that many modifications can be made without departing from the novel matters and effects of the present invention. Accordingly, all such modifications are intended to be included in the scope of the present invention. For example, a term described at least once together with a different term having a broader meaning or the same meaning in the specification or the drawings can be replaced with the different term in any part of the specification or the drawings. In addition, the configurations and operations of the integrated circuit device, the electro-optical device, and the electronic apparatus are not limited to those described in this embodiment, and various modifications can be made.

12 electro-optic panel (EPD panel), 14 gate lines, 16 source lines,
20 pixels, 24 storage capacitors, 26 pixel electrodes, 28 counter electrodes,
30 microcapsules, 31 fluid, 32 black particles, 33 white particles,
100 integrated circuit device, 110 source driver unit, 120 boost control circuit,
130 control unit, 140 temperature detection circuit, 150 waveform information storage unit,
160 host I / F unit, 170 display memory block, 180 internal booster circuit,
200 electro-optic device,
210 boosted voltage generating element, 220 gate driver,
300 electronic device, 310 host device, 320 operation unit,
330 storage unit, 340 communication unit,
RTH temperature detection element, TTS temperature detection monitor terminal, TRF reference voltage terminal,
TGND ground terminal, TGIF interface terminal group, TGBST boost external connection terminal group

Claims (16)

A temperature detection circuit that detects an environmental temperature using a temperature detection element outside the integrated circuit device; and
A control unit that performs display control of the electro-optic panel and control of the temperature detection circuit;
A temperature detection monitor terminal connected to the temperature detection element;
A grounding terminal;
An interface terminal group connected to the host device,
The ground terminal is
An integrated circuit device, wherein the integrated circuit device is disposed between the monitor terminal for temperature detection and the interface terminal group. In claim 1,
A boost external connection terminal group connected to an external boost voltage generating element of the integrated circuit device;
The integrated circuit device, wherein the ground terminal is disposed between the temperature detection monitor terminal and the boost external connection terminal group. In claim 2,
The boost voltage generating element includes:
An element for a booster circuit that generates a power supply voltage of a gate driver that drives a gate line of the electro-optical panel;
2. The integrated circuit device according to claim 1, wherein the boosting external connection terminal group is connected to the boosting circuit element. In claim 2 or 3,
A source driver section for driving a source line of the electro-optical panel;
An internal booster circuit for generating a power supply voltage of the source driver unit,
The boost voltage generating element is the flying capacitor for the internal boost circuit,
2. The integrated circuit device according to claim 1, wherein the boosting external connection terminal group is connected to the flying capacitor. In any one of Claims 1 thru | or 4,
The temperature detecting element is a thermistor,
The ground terminal is connected to one end of the thermistor,
The integrated circuit device, wherein the temperature detection monitor terminal is connected to the other end of the thermistor. In claim 5,
Including a reference voltage terminal from which a reference voltage for temperature detection is output,
One end of a resistance element for temperature detection is connected to the other end of the thermistor,
The other end of the temperature detecting resistance element is connected to the reference voltage terminal,
An integrated circuit device, wherein a voltage obtained by dividing the reference voltage by the temperature detecting resistance element and the thermistor is input to the temperature detecting monitor terminal. In any one of Claims 1 thru | or 6.
The controller is
An integrated circuit device, wherein the temperature detection circuit is controlled so that the temperature detection circuit performs temperature detection in a period different from a display control period of the electro-optical panel. In any one of Claims 1 thru | or 7,
In the integrated circuit device, the temperature detection circuit is disposed with another circuit interposed between the temperature detection circuit and the control unit. In any one of Claims 1 thru | or 8.
The integrated circuit device, wherein the temperature detection circuit is arranged without interposing another circuit between the first short side of the integrated circuit device. In any one of Claims 1 thru | or 9,
A display memory block for storing image data displayed on the electro-optical panel;
The integrated circuit device, wherein the display memory block is disposed between the temperature detection circuit and the control unit. In any one of Claims 1 thru | or 10.
The electro-optical panel is an electrophoretic panel;
The temperature detection element is the temperature detection element for the electrophoresis panel,
A waveform information storage unit for storing drive waveform information for changing the display state of the electrophoretic panel from the first display state to the second display state;
The controller is
The drive waveform information corresponding to an environmental temperature is selected based on the detection result of the temperature detection unit, and the electrophoretic panel is controlled based on the selected drive waveform information. Integrated circuit device. A glass substrate on which an electro-optic panel is formed;
An integrated circuit device mounted on the glass substrate and driving the electro-optic panel;
A flexible substrate on which signal lines between the integrated circuit device and the host device are wired;
Including a temperature detection element mounted on the flexible substrate,
The integrated circuit device includes:
It has a monitor terminal for temperature detection,
The electro-optical device, wherein the temperature detection monitor terminal and the temperature detection element are connected by wiring on the glass substrate and wiring on the flexible substrate. In claim 12,
The integrated circuit device includes:
A grounding terminal;
An interface terminal group connected to the host device,
The ground terminal is
An electro-optical device, which is disposed between the temperature detection monitor terminal and the interface terminal group. In claim 12 or 13,
Including a boosted voltage generating element mounted on the flexible substrate;
The integrated circuit device includes:
A boosting external connection terminal group connected to the boosting voltage generating element;
The electro-optical device, wherein the ground terminal is disposed between the temperature detection monitor terminal and the boosting external connection terminal group. In any of claims 12 to 14,
The electro-optical device, wherein the temperature detection element is a thermistor. The electro-optical device according to any one of claims 12 to 15,
An electronic device comprising the host device.

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