JP2013201231A5 - - Google Patents

Description

FIG. 1 is a diagram showing the configuration of the Hall element of the present invention. The Hall element of the present invention has a magnetic sensing portion of a square N-type impurity region 121 having a side of 50 to 150 μm and a control current input terminal and Hall voltage output terminals 11, 12, 13 of the N-type high concentration impurity region at each apex thereof. , 14. N-type impurity region of the magnetic sensing portion between the depth 500 to 800 nm, the peak is between the impurity concentration of ^{1 × 10 16 (atoms / cm} 3) ≦ N ≦ 5 × 10 16 (atoms / cm 3) Have . The depth of the high-concentration N-type impurity region serving as the control current input terminal and the Hall voltage output terminal is preferably about 300 nm. That is, the magnetic sensing part is deepened, and the control current input terminal and the Hall voltage output terminal are arranged at a position shallower than the Hall magnetic sensing part.

Further, as an embodiment, a square magnetic sensing portion and a control current input terminal and a Hall voltage output terminal at each apex thereof, the N-type impurity region has a depth of 500 to 800 nm, and a concentration of 1 × 10 ¹⁶ (atoms / cm ³ ). Assuming that there is a peak in the range of ≦ N ≦ 5 × 10 ¹⁶ (atoms / cm ³ ) , the Hall element shape in which the control current input terminal and the Hall voltage output terminal are arranged shallowly is taken as an example, but this element shape is limited to a square. Absent. A shape having a magnetic sensing portion having a peak at a depth of 500 to 800 nm of the N-type impurity region, and a control current input terminal and a Hall voltage output terminal of the N-type high-concentration impurity region at each vertex thereof, and a shape capable of erasing offset voltage due to spinning current Any symmetrical Hall element may be used. For example, an N-type impurity region having a peak at a depth of 500 to 800 nm and a 45 ° tilted cross-shaped Hall element magnetic sensing portion, and a hole current control electrode and a hall voltage output terminal shallower than the N-type impurity region at each end thereof The same effect can be obtained even when the shape is other than the square shape such as the shape in which is arranged.

Claims (4)

A magnetic sensing portion that is an N-type impurity region; a peripheral portion of the magnetic sensing portion that is a P-type substrate; a junction formed by the magnetic sensing portion and the peripheral portion; and a control current input terminal disposed in the magnetic sensing portion And a Hall sensor having a Hall element having a Hall voltage output terminal,
The control current input terminal and the Hall voltage output terminal are arranged at a position shallower than the bottom of the magnetic sensing part,
The N-type impurity region has a concentration peak deeper than the bottoms of the control current input terminal and the Hall voltage output terminal,
A hall sensor characterized in that a control current flowing in the hall element flows inside the magnetic sensing part away from the surface of the joint and the magnetic sensing part. The N-type impurity region of the magnetic sensing portion has a depth of 500 to 800 nm and a peak between 1 × 10 ¹⁶ (atoms / cm ³ ) and 5 × 10 ¹⁶ (atoms / cm ³ ). The hall sensor as claimed in claim 1.   2. The Hall sensor according to claim 1, wherein the magnetic sensing portion is square or cross-shaped, and has a control current input terminal and a Hall voltage output terminal of an N-type high concentration impurity region at each apex and end thereof.   The Hall sensor according to claim 1, wherein the offset voltage can be removed by a spinning current.