JP2013191895A - Semiconductor laser element, method for driving the same, and semiconductor laser device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor laser element of ultra short pulse and ultra high output, capable of emitting a pulse laser beam having higher peak power notwithstanding its simple configuration and structure.SOLUTION: A semiconductor laser element comprises: (A) a laminated structure composed of a first compound semiconductor layer 30 containing an n-type impurity, an active layer 40 having a quantum well structure, and a second compound semiconductor layer 50 containing a p-type impurity; (B) a first electrode 61 electrically connected to the first compound semiconductor layer 30; and (C) a second electrode 62 electrically connected to the second compound semiconductor layer 50. The second compound semiconductor layer 50 is provided with an electron barrier layer 53 having a thickness of not less than 1.5×10m. The second electrode 62 is separated into a first portion 62A and a second portion 62B by an isolation groove 63. The semiconductor laser element is driven by a pulse voltage having a value twice or more of a threshold voltage.

Description

  The present invention relates to a semiconductor laser element, a driving method thereof, and a semiconductor laser device.

  Today, ultra-short pulse and ultra-high-power lasers are actively used for research in advanced scientific fields using laser beams with pulse times in the attosecond range and femtosecond range. For example, a titanium / sapphire laser is known as an ultra-short pulse / high-power laser, and the titanium / sapphire laser is an expensive and large-sized solid-state laser light source. It is the main factor that hinders If an ultra-short pulse / ultra-high power laser can be realized by a semiconductor laser, it will lead to significant downsizing, low cost, and high stability, which will be a breakthrough in spreading advanced science and technology in this field. Is expected to be.

  On the other hand, the shortening of the pulse length of the semiconductor laser has been actively studied since the 1960s in the field of communication systems. As a method for generating a short pulse in a semiconductor laser, a gain switching method, a loss switching method (Q switching method), and a mode locking method are known. In these methods, a semiconductor laser, a semiconductor amplifier, and a nonlinear optical element are used. It aims at high output by combining with optical fiber.

J. Ohya et al., Appl. Phys. Lett. 56 (1990) 56. J. AuYeung et al., Appl. Phys. Lett. 38 (1981) 308. N. Yamada et al., Appl. Phys. Lett. 63 (1993) 583. J.E.Ripper et al., Appl.Phys.Lett. 12 (1968) 365. "Ultrafast diode lasers", P. Vasil'ev, Artech House Inc., 1995 Peter P. Vasil'EV IEEE Journal of Quantum Electronics Vol.24 No.12 p.2386 (1988) "12W peak-power 10ps duration optical pulse generation by gain switching of a single-transverse-mode GaInN blue laser diode", S. Kono, et al., Applied Physicis Letters 93, 131113 (2008)

  Among these, in the gain switching method which is the simplest method, an optical pulse having a pulse width of about 20 picoseconds to 100 picoseconds can be generated by driving a semiconductor laser with a short pulse current ( For example, J. Ohya et al., Appl. Phys. Lett. 56 (1990) 56. as Non-Patent Document 1, and J. AuYeung et al., Appl. Phys. Lett. 38 (1981) 308 as Non-Patent Document 2. N. Yamada et al., Appl. Phys. Lett. 63 (1993) 583. Non-patent document 4 as JE Ripper et al., Appl. Phys. Lett. 12 (1968) 365. Non-Patent Document 5, "Ultrafast diode lasers", P. Vasil'ev, Artech House Inc., 1995). In this gain switching method, since a commercially available semiconductor laser is only driven with a short pulse current, it is possible to realize a picosecond class short pulse light source with a very simple device configuration. However, the peak output of the optical pulse is about 0.1 watt to 1 watt for the 850 nm band AlGaAs semiconductor laser, and about 10 milliwatt to 100 milliwatt for the 1.5 μm band InGaAsP semiconductor laser. Therefore, for example, the light output is insufficient as a light source that requires a high peak output used for two-photon absorption. Therefore, in order to increase the peak output, for example, a complicated and difficult configuration combining a mode synchronization method and a semiconductor amplifier or an optical fiber amplifier is required.

  Up to now, in an AlGaAs semiconductor laser element, a three-electrode passive QS method has been used to obtain a peak power of 10 watts, an optical pulse width of 5 picoseconds, and an energy of 50 picojoules per pulse (non-native). As Patent Document 6, see Peter P. Vasil'EV IEEE Journal of Quantum Electronics Vol.24 No.12 p.2386 (1988)). In the GaN-based semiconductor laser device, a peak power of 12 watts, an optical pulse width of 10 picoseconds, and an energy per pulse of 120 picojoules are obtained by the strong excitation gain switching method (Non-Patent Document 7) "12W peak-power 10ps duration optical pulse generation by gain switching of a single-transverse-mode GaInN blue laser diode", S. Kono, et al., Applied Physicis Letters 93, 131113 (2008)).

  In this way, an example aimed at high output based on “all semiconductors”, which is an essential requirement for the ultimate miniaturization, that is, a semiconductor laser or a semiconductor laser and a semiconductor device without requiring mechanical parts and optical parts. In particular, there is almost no report on a semiconductor laser device composed only of a combination of and a 405 nm band semiconductor laser composed of a GaN-based compound semiconductor. However, if an “all-semiconductor” pulse laser having a high peak output can be realized in the 405 nm band, it can be used as a light source for a volumetric optical disc system that is expected as the next generation optical disc system of the Blu-ray optical disc system. As well as being able to realize an easy ultrashort pulse / high output light source that covers the entire wavelength band of the visible light region, it is possible to provide a light source required in the medical field, bioimaging field, etc. It becomes possible. In addition, a high-definition processing apparatus can be expected in the nano-processing field.

  Non-Patent Document 6 and Non-Patent Document 7 described above disclose semiconductor laser elements having high peak power. However, there is a strong demand for a semiconductor laser element that can emit pulsed laser light having an even higher peak power.

  Accordingly, an object of the present invention is to provide an ultra-short pulse / ultra-high-power semiconductor laser element capable of emitting pulse laser light having a higher peak power despite its simple configuration and structure, and a driving method thereof, and An object of the present invention is to provide a semiconductor laser device incorporating such a semiconductor laser element.

The semiconductor laser device according to the first or second aspect of the present invention for achieving the above object, or the first or second aspect of the present invention for achieving the above object. The semiconductor laser element in the semiconductor laser element driving method, or the semiconductor laser element constituting the semiconductor laser device according to the first aspect or the second aspect of the present invention for achieving the above object,
(A) a laminated structure including a first compound semiconductor layer containing an n-type impurity, an active layer having a quantum well structure, and a second compound semiconductor layer containing a p-type impurity,
(B) a first electrode electrically connected to the first compound semiconductor layer, and
(C) a second electrode electrically connected to the second compound semiconductor layer;
With
The second compound semiconductor layer is provided with an electron barrier layer having a thickness of 1.5 × 10 ⁻⁸ m (15 nm) or more. The semiconductor laser element having such a configuration may be hereinafter referred to as “the semiconductor laser element of the present invention”. The upper limit of the thickness of the electron barrier layer may be determined as appropriate by conducting various tests in view of the increase in driving voltage, the state of occurrence of strain in the second compound semiconductor layer, and the like.

The semiconductor laser device according to the first aspect of the present invention is 10 times more values of I _th of the threshold current, preferably 20 or more times the value, more preferably the pulse current having a value more than 50 times The driven semiconductor laser device according to the second aspect of the present invention has a pulse voltage having a value that is two times or more, preferably four times or more, more preferably ten times or more the threshold voltage value V _th. It is driven by.

In the semiconductor laser device driving method according to the first aspect of the present invention, the semiconductor laser device is composed of the semiconductor laser device of the present invention as described above, and the threshold current value I _th The semiconductor laser device is driven by a pulse current having a value of 10 times or more, preferably 20 times or more, more preferably 50 times or more of the above, and the method of driving a semiconductor laser device according to the second aspect of the present invention However, as described above, the semiconductor laser element is composed of the semiconductor laser element of the present invention, and the value of the threshold voltage value V _th is at least twice, preferably at least four times, more preferably Drives the semiconductor laser element with a pulse voltage having a value of 10 times or more.

Furthermore, the semiconductor laser device according to the first aspect of the present invention is a semiconductor laser device including a pulse generator and a semiconductor laser element driven by a driving pulse from the pulse generator, laser element, as described above, are composed of a semiconductor laser element or the like of the present invention, a semiconductor laser device, the value I 10 times or more of the values of _th threshold current, preferably 20 or more times the value, and more preferably It is driven by a pulse current having a value of 50 times or more. The semiconductor laser device according to the second aspect of the present invention is also a semiconductor laser device including a pulse generator and a semiconductor laser element driven by a driving pulse from the pulse generator, the semiconductor laser device As described above, the element is composed of the semiconductor laser element or the like of the present invention, and the semiconductor laser element has a value that is twice or more, preferably four times or more, more preferably 10 times the threshold voltage value V _th. It is driven by a pulse current having a value more than double.

Here, the threshold current value I _th refers to the current flowing through the semiconductor laser element when laser oscillation starts, and the threshold voltage value V _th refers to the voltage applied to the semiconductor laser element at that time. When the internal resistance of the semiconductor laser element is R (Ω),
V _th = R × I _th + V ₀
There is a relationship. V ₀ is a build-in potential of a pn junction.

In the semiconductor laser device according to the first aspect or the second aspect of the present invention or a driving method thereof, the semiconductor laser device according to the first aspect or the second aspect of the present invention, the second compound semiconductor layer has a thickness. An electron barrier layer of 1.5 × 10 ⁻⁸ m or more is provided. The semiconductor laser element or driving method thereof according to the first aspect of the present invention, in the semiconductor laser device according to a first aspect of the present invention, more than 10 times the value I _th in the threshold current of the semiconductor laser element In the semiconductor laser device or the driving method thereof according to the second aspect of the present invention and the semiconductor laser device according to the second aspect of the present invention, the semiconductor laser element is driven with a pulse current having a value of It is driven by a pulse voltage having a value more than twice the value of V _th . As a result, it was possible to obtain an ultrashort pulse / ultra high output semiconductor laser element that emits laser light having a peak power of 70 watts or more. A semiconductor laser device (semiconductor laser light source) having a peak light intensity of a watt class or higher can be easily obtained by a simple combination with commercially available electric drive system electronics.

FIGS. 1A and 1B are circuit diagrams of the semiconductor laser device of Example 1. FIGS. 1C and 1D show rectangular pulse voltages applied to the semiconductor laser element. It is a figure shown typically. FIG. 2 is a schematic cross-sectional view of the semiconductor laser device of Example 1 when cut along a virtual plane orthogonal to the extending direction of the resonator. FIG. 3 is a schematic cross-sectional view of the semiconductor laser device of Example 1 when cut along a virtual plane including the extending direction of the resonator. FIG. 4 is a schematic cross-sectional view of a modification of the semiconductor laser device of Example 1 when cut along a virtual plane including the direction in which the resonator extends. FIG. 5 is a schematic cross-sectional view of the semiconductor laser device of Example 2 when cut along a virtual plane including the extending direction of the resonator. FIG. 6 is a schematic cross-sectional view of a modification of the semiconductor laser device of Example 2 when cut along a virtual plane including the direction in which the resonator extends. FIG. 7 is a schematic cross-sectional view of another modification of the semiconductor laser device of Example 2 when cut along a virtual plane including the direction in which the resonator extends. FIG. 8 is a schematic cross-sectional view of a modification of the semiconductor laser device of Example 2 shown in FIG. 5 when cut along a virtual plane including the extending direction of the resonator. FIG. 9 is a schematic cross-sectional view of a modification of the semiconductor laser device of Example 2 shown in FIG. 6 when cut along a virtual plane including the extending direction of the resonator. FIG. 10 is a schematic cross-sectional view of a modification of the semiconductor laser device of Example 2 shown in FIG. 7 when cut along a virtual plane including the extending direction of the resonator. FIG. 11 is a schematic cross-sectional view of the semiconductor laser device of Example 3 when cut along a virtual plane including the extending direction of the resonator. FIG. 12 is a schematic cross-sectional view of a modification of the semiconductor laser device of Example 3 when cut along a virtual plane including the extending direction of the resonator. FIG. 13 is a schematic cross-sectional view of another modification of the semiconductor laser device of Example 3 when cut along a virtual plane including the extending direction of the resonator. FIG. 14 is a graph showing the measurement results of the peak power of the semiconductor laser device of Example 1. FIG. 15 shows the relationship between the pulse width of pulse current or pulse voltage (1.5 nanoseconds, 2.0 nanoseconds, and 2.5 nanoseconds) and the state of laser oscillation in the semiconductor laser device of Example 1. It is a graph which shows the result. FIG. 16 shows the relationship between the pulse width of pulse current or pulse voltage (3.0 nanoseconds, 3.5 nanoseconds, and 4.0 nanoseconds) and the laser oscillation state in the semiconductor laser device of Example 1. It is a graph which shows the result. FIG. 17 is a graph showing the results of investigating the relationship between the pulse width of pulse current or pulse voltage (4.5 nanoseconds) and the state of laser oscillation in the semiconductor laser device of Example 1. 18A and 18B are schematic partial cross-sectional views of a substrate and the like for explaining the method of manufacturing the semiconductor laser element of Example 3. FIG. FIGS. 19A and 19B are schematic partial cross-sectional views of a substrate and the like for explaining the method of manufacturing the semiconductor laser device of Example 3, following FIG. 18B. FIG. 20 is a schematic partial end view of a substrate and the like for explaining the method for manufacturing the semiconductor laser element of Example 3 following FIG.

Hereinafter, the present invention will be described based on examples with reference to the drawings. However, the present invention is not limited to the examples, and various numerical values and materials in the examples are examples. The description will be given in the following order.
1. 1. Description of the semiconductor laser device of the present invention, its driving method, and semiconductor laser device in general Example 1 (semiconductor laser element, driving method thereof, and semiconductor laser device)
3. Example 2 (Modification of Example 1)
4). Example 3 (another modification of Example 1 and others)

[Description of Semiconductor Laser Device, Driving Method, and Semiconductor Laser Device of the Present Invention]
In the semiconductor laser device or the like of the present invention, the distance (d) from the electron barrier layer to the active layer may be 8 × 10 ⁻⁸ m (80 nm) or less. Here, the “distance from the electron barrier layer to the active layer (d)” means the part of the electron barrier layer facing the active layer (boundary surface) and the part of the active layer facing the electron barrier layer (boundary surface) Means the distance between. The distance (d) from the electron barrier layer to the active layer may be set to “0”. In other words, the electron barrier layer may be provided in contact with the active layer. The electron barrier layer is also referred to as a cap layer or an evaporation preventing layer, reflects electrons from the first compound semiconductor layer containing n-type impurities, and the electrons penetrate through the second compound semiconductor layer, ie, overflow of electrons. It is a layer provided to prevent. By setting the distance (d) from the electron barrier layer to the active layer to 8 × 10 ⁻⁸ m (80 nm) or less, it is possible to suppress the electron barrier from being lowered due to the bending of the energy band at the time of high current injection. The effective barrier height in the layer can be increased.

In the semiconductor laser device or the like of the present invention including the above-described preferred embodiment, the active layer can be configured to include a carrier injection region and a carrier non-injection region. Such a configuration is referred to as a “first configuration semiconductor laser element” for convenience. The semiconductor laser device of the first configuration has a carrier injection region (light emitting region, gain region) and a carrier non-injection region (saturable absorption region) in the direction in which the resonator extends (hereinafter sometimes referred to as “resonator direction”). ) Are juxtaposed, and can be classified as a kind of multi-section (multi-region) type semiconductor laser element. As the arrangement state of the carrier injection region and the carrier non-injection region,
(1) N carrier injection regions and (N-1) carrier non-injection regions are provided, and the carrier injection region is arranged with the carrier non-injection region in between. (2) N carrier non-injection regions An example is a state in which an injection region and (N-1) carrier injection regions are provided, and a carrier non-injection region is disposed with the carrier injection region interposed therebetween. For example, ions of boron (B), aluminum (Al), silicon (Si), etc. are ion-implanted into the second compound semiconductor layer located above the carrier non-injection region to increase resistance. Also good. In the following description, the resonator direction is the X direction, and the thickness direction of the multilayer structure is the Z direction.

Alternatively, in the semiconductor laser device or the like of the present invention including the above-described preferred form, the length of the second electrode can be shorter than the length of the active layer. Such a configuration is referred to as a “second configuration semiconductor laser element” for convenience. There may be one second electrode or a plurality of second electrodes. The semiconductor laser device having the second configuration also includes a multi-layer in which a light emitting region (a portion of an active layer positioned immediately below the second electrode) and a saturable absorption region (a portion other than the active layer) are juxtaposed in the cavity direction. It can be classified as a kind of section type semiconductor laser device. As an arrangement state of the light emitting region and the saturable absorption region,
(1) N light-emitting regions and (N-1) saturable absorption regions are provided, and the light-emitting regions are arranged across the saturable absorption region. (2) N saturable absorption regions. And (N-1) light emitting regions are provided, and a saturable absorption region is disposed with the light emitting region interposed therebetween. By adopting the structure (2), damage to the light emitting end face of the semiconductor laser element is difficult to occur. For example, ions of boron (B), aluminum (Al), silicon (Si), etc. are ion-implanted into the second compound semiconductor layer located above the saturable absorption region to increase resistance. Also good.

  Alternatively, in the semiconductor laser element or the like of the present invention including the above-described preferable form, the second electrode can be separated into a first portion and a second portion by a separation groove. Such a configuration is referred to as a “third configuration semiconductor laser element” for convenience. Laser oscillation is generated by applying a pulse current or pulse voltage to the first portion of the second electrode. The width of the separation groove is 1 μm or more and 50% or less of the resonator length, preferably 10 μm or more and 10% or less of the resonator length, but is not limited thereto.

The semiconductor laser device having the third configuration also has a light emitting region (a portion of the active layer located immediately below the first portion of the second electrode) and a saturable absorption region (just below the second portion of the second electrode) in the cavity direction. Can be classified as a kind of multi-section type semiconductor laser device in which the active layer portion is located side by side. Here, the electrical resistance value between the first portion and the second portion of the second electrode is 1 × 10 ² Ω or more, preferably 1 × 10 ³ Ω or more, more preferably 1 × 10 ⁴ Ω or more. It is desirable. Alternatively, the electrical resistance value between the first part and the second part of the second electrode is 1 × 10 times or more, preferably 1 × 10 ² times the electrical resistance value between the second electrode and the first electrode. It is desirable that the ratio is at least twice, more preferably at least 1 × 10 ³ times. A pulse current or pulse voltage synchronized with the pulse current or pulse voltage applied to the first part of the second electrode may be applied to the second part of the second electrode, or a DC bias may be applied. Good. The applied voltage to the second portion of the second electrode may be forward bias or reverse bias. Here, the voltage applied to the first portion of the second electrode is preferably higher than the voltage applied to the second portion of the second electrode. As the arrangement state of the first part and the second part of the second electrode,
(1) A first portion of N second electrodes and a second portion of (N-1) second electrodes are provided, and the first portion of the second electrode sandwiches the second portion of the second electrode. (2) The second part of the N second electrodes and the first part of the (N-1) second electrodes are provided, and the second part of the second electrode is the second electrode. The state which is arrange | positioned on both sides of the 1st part of this can be mentioned.

The separation groove can be formed in the second electrode by etching the second electrode. In this case, when the etching rate of the second electrode is ER ₀ and the etching rate of the laminated structure is ER ₁ , ER ₀ / ER ₁ ≧ 1 × 10, preferably ER ₀ / ER ₁ ≧ 1 × 10 ² is satisfied. When ER ₀ / ER ₁ satisfies such a relationship, the second electrode can be reliably etched without etching the laminated structure (or even if it is etched slightly). In this case, the second electrode may be a palladium (Pd) single layer, a nickel (Ni) single layer, a platinum (Pt) single layer, or a lower metal layer and an upper metal layer in which the lower metal layer is in contact with the second compound semiconductor layer. Layered structure (however, the lower metal layer is made of one kind of metal selected from the group consisting of palladium, nickel and platinum, and the upper metal layer has an etching rate when the second electrode is etched, The metal layer is preferably made of a metal that is the same as or similar to the etching rate of the metal layer, or higher than the etching rate of the lower metal layer. When the lower metal layer is made of palladium and the upper metal layer is made of nickel, the thickness of the upper metal layer is desirably 0.1 μm or more, preferably 0.2 μm or more. Alternatively, the second electrode is preferably composed of a single layer of palladium (Pd). In this case, the thickness is preferably 20 nm or more, and preferably 50 nm or more. Further, the etching solution for etching the second electrode is aqua regia, nitric acid, sulfuric acid, hydrochloric acid, or a mixed solution of at least two of these acids (specifically, a mixed solution of nitric acid and sulfuric acid, It is desirable to use a mixture of sulfuric acid and hydrochloric acid.

In the semiconductor laser device of the present invention including the semiconductor laser device having the preferred configuration described above, the semiconductor laser device having the first configuration to the semiconductor laser device having the third configuration, the semiconductor laser device has a ridge stripe type separated confinement heterostructure (SCH). The distance (D) from the top surface of the portion of the second compound semiconductor layer located outside the both side surfaces of the ridge portion to the active layer has a structure (Separate Confinement Heterostructure) of 1.0 × 10 ⁻⁷ m ( 0.1 μm) or more. Such a configuration is referred to as a “fourth configuration semiconductor laser element” for convenience. By defining the distance (D) in this way, a saturable absorption region can be reliably formed on both sides (Y direction) of the active layer. The upper limit of the distance (D) may be determined based on an increase in threshold current, temperature characteristics, deterioration in current increase rate during long-term driving, and the like. The ridge portion can be formed by removing a part of the second compound semiconductor layer in the thickness direction, for example, by the RIE method. An example of the width of the ridge portion in the ridge stripe structure is 2 μm or less. In addition, a laminated insulating film having a SiO ₂ / Si laminated structure is formed on both side surfaces of the ridge portion, and the difference between the effective refractive index of the ridge portion and the effective refractive index of the laminated insulating film is 5 × 10 ^{−. The} configuration may be ^{3 to} 1 × 10 ⁻² . By using such a laminated insulating film, a single fundamental transverse mode can be maintained even at a high output operation exceeding 70 watts. The lower limit value of the width of the ridge portion is not limited, but can be 0.8 μm, for example.

In the semiconductor laser device and the like of the present invention including the semiconductor laser device having the preferred configuration, the first configuration, and the semiconductor laser device having the first configuration to the third configuration described above, the stacked structure is made of an AlGaInN-based compound semiconductor. be able to. That is, the semiconductor laser element can be a GaN semiconductor laser element. More specifically, for example,
The second compound semiconductor layer has at least a laminated structure of an electron barrier layer and a clad layer from the active layer side,
The cladding layer has a superlattice structure in which p-type GaN layers and p-type AlGaN layers are alternately stacked,
The electron barrier layer is composed of a p-type AlGaN layer,
The composition ratio of Al in the electron barrier layer can be higher than the average composition ratio of Al in the cladding layer. In addition, as a composition ratio of Al in the electron barrier layer, specifically, when the composition of the electron barrier layer is expressed as Al _x Ga _1-x N, 0.05 ≦ x ≦ 0.5, preferably 0.15 ≦ x ≦ 0.25, more preferably 0.18 ≦ x ≦ 0.20.

Specific examples of the AlGaInN compound semiconductor include GaN, AlGaN, GaInN, and AlGaInN. Furthermore, these compound semiconductors may contain boron (B) atoms, thallium (Tl) atoms, arsenic (As) atoms, phosphorus (P) atoms, and antimony (Sb) atoms as desired. . An active layer having a quantum well structure has a structure in which at least one well layer and a barrier layer are stacked, but as a combination of (a compound semiconductor constituting a well layer, a compound semiconductor constituting a barrier layer) , (In _y Ga _(1-y) N, GaN), (In _y Ga _(1-y) N, In _z Ga _(1-z) N) [where y> z], (In _y Ga _{(1 -y)} N, AlGaN). An AlGaInN-based compound semiconductor constituting a stacked structure of a semiconductor laser element may be referred to as a “GaN-based compound semiconductor” hereinafter, and an AlGaInN-based compound semiconductor layer may be referred to as a “GaN-based compound semiconductor layer” hereinafter. There is.

As described above, the portion of the second compound semiconductor layer located between the electron barrier layer and the second electrode is a clad layer having a superlattice structure in which p-type GaN layers and p-type AlGaN layers are alternately stacked. However, the thickness of the cladding layer is preferably 0.7 μm or less. By adopting such a superlattice structure, the series resistance component of the semiconductor laser element can be lowered while maintaining the high refractive index necessary for the cladding layer, leading to a lower operating voltage of the semiconductor laser element. . Although the lower limit of the thickness of the superlattice structure is not limited, for example, 0.3 μm can be exemplified, and the thickness of the p-type GaN layer constituting the superlattice structure is exemplified by 1 nm to 5 nm. The thickness of the p-type AlGaN layer constituting the superlattice structure can be 1 nm to 5 nm, and the total number of p-type GaN layers and p-type AlGaN layers is 60 to 300 layers. Can be illustrated. The second electrode is provided on the second compound semiconductor layer, and the distance from the active layer to the second electrode is 1 μm or less, preferably 0.6 μm or less. By defining the distance from the active layer to the second electrode in this way, it is possible to reduce the thickness of the p-type second compound semiconductor layer having a high resistance and to reduce the operating voltage of the semiconductor laser device. . Although it does not limit as a lower limit of the distance from an active layer to a 2nd electrode, 0.3 micrometer can be mentioned, for example. The second compound semiconductor layer is doped with Mg of 1 × 10 ¹⁹ cm ⁻³ or more, and the absorption coefficient of the second compound semiconductor layer with respect to light having a wavelength of 405 nm from the active layer is at least 50 cm ^−1. It can be set as the structure which is. The atomic concentration of Mg is derived from the material physical property of showing the maximum hole concentration at a value of 2 × 10 ¹⁹ cm ⁻³ , and the maximum hole concentration, that is, the specific resistance of the second compound semiconductor layer. This is a result designed to minimize. The absorption coefficient of the second compound semiconductor layer is defined from the viewpoint of reducing the resistance of the semiconductor laser device as much as possible. As a result, the light absorption coefficient of the active layer is generally 50 cm ^−1. Is. However, in order to increase the absorption coefficient, the Mg doping amount can be intentionally set to a concentration of 2 × 10 ¹⁹ cm ⁻³ or more. In this case, the upper limit Mg doping amount for obtaining a practical hole concentration is, for example, 8 × 10 ¹⁹ cm ⁻³ .

  In the second compound semiconductor layer, a non-doped compound semiconductor layer (for example, a non-doped GaInN layer or a non-doped AlGaN layer) as a lower cladding layer may be formed between the active layer and the electron barrier layer. Further, a non-doped GaInN layer as a light guide layer may be formed between the active layer and the lower cladding layer. The uppermost layer of the second compound semiconductor layer may be structured to be occupied by the Mg-doped GaN layer (p-side contact layer). The vertical beam emission half-value angle θ⊥ of the laser light emitted from the end face of the semiconductor laser element can be 25 degrees or less, preferably 21 degrees or less. The lower limit value of the beam radiation half-value angle θ⊥ is not limited, but can be 17 degrees, for example. Examples of the resonance length include 0.3 mm to 2 mm. The band gap of the compound semiconductor constituting the well layer in the active layer is desirably 2.4 eV or more. The wavelength of the laser light emitted from the active layer is desirably 360 nm to 500 nm, preferably 400 nm to 410 nm. Here, it goes without saying that the various configurations described above can be appropriately combined.

  In the method of driving the semiconductor laser device according to the first aspect of the present invention using the semiconductor laser device of the present invention including the various preferred modes and configurations described above, after the rise of the pulse current, before the fall Laser oscillation can be used, or laser oscillation can be performed simultaneously with or after the fall of the pulse current, thereby reliably suppressing the occurrence of so-called jitter. can do. Note that the pulse width of the pulse current is preferably not less than the carrier lifetime (for example, 1 nanosecond to 2 nanoseconds) which is the time required for the spontaneous emission light to recombine.

  On the other hand, in the method for driving a semiconductor laser device according to the second aspect of the present invention using the semiconductor laser device of the present invention including the various preferred modes and configurations described above, the pulse voltage rises and then falls. The laser can be oscillated before, or the laser can be oscillated simultaneously with the falling edge of the pulse voltage, or after the falling edge. Can be suppressed. When there is a request to reduce the electric pulse width, the applied voltage may be increased. The pulse width of the pulse voltage is preferably not less than the carrier lifetime (for example, 1 nanosecond to 2 nanoseconds).

The semiconductor laser device according to the first aspect of the present invention including the various preferred modes and configurations described above or the driving method thereof, the semiconductor laser device according to the first aspect of the present invention (hereinafter collectively referred to as In “sometimes referred to as“ first aspect of the present invention ”), the value of the pulse current may be 0.4 ampere or more, preferably 0.8 ampere or more. Alternatively, the value of the pulse current, when converted into the active layer 1 cm ² per (joining region area 1 cm ² per), i.e., (a operating current density, unit ampere / cm ²⁾ current density when converted by 3.5 × 10 ⁴ amperes / cm ² or more, preferably 7 × 10 ⁴ amperes / cm ² or more.

  In addition, the semiconductor laser device according to the second aspect of the present invention including the various preferable modes and configurations described above or the driving method thereof, and the semiconductor laser device according to the second aspect of the present invention (hereinafter collectively referred to as these). In the “second aspect of the present invention”, the value of the pulse voltage may be 8 volts or more, preferably 16 volts or more.

The semiconductor laser device according to the first aspect or the second aspect of the present invention including the various preferable modes and configurations described above or the driving method thereof, and the semiconductor laser according to the first aspect or the second aspect of the present invention In an apparatus (hereinafter, these may be collectively referred to simply as “the present invention”), various GaN-based compound semiconductor layers constituting a semiconductor laser element are sequentially formed on a substrate. Substrate, sapphire substrate, GaAs substrate, SiC substrate, alumina substrate, ZnS substrate, ZnO substrate, AlN substrate, LiMgO substrate, LiGaO ₂ substrate, MgAl ₂ O ₄ substrate, InP substrate, Si substrate, surface of these substrates (main surface) ) May have a base layer or a buffer layer formed thereon. In addition, as a method for forming various GaN-based compound semiconductor layers constituting the semiconductor laser device, metal organic chemical vapor deposition (MOCVD method, MOVPE method), molecular beam epitaxy method (MBE method), halogen transport or reaction. Hydride vapor phase growth method that contributes to the above.

Examples of the organic gallium source gas in the MOCVD method include trimethyl gallium (TMG) gas and triethyl gallium (TEG) gas, and examples of the nitrogen source gas include ammonia gas and hydrazine gas. In forming a GaN-based compound semiconductor layer having an n-type conductivity, for example, silicon (Si) may be added as an n-type impurity (n-type dopant), or a GaN-based compound having a p-type conductivity. In forming the compound semiconductor layer, for example, magnesium (Mg) may be added as a p-type impurity (p-type dopant). Further, when aluminum (Al) or indium (In) is included as a constituent atom of the GaN-based compound semiconductor layer, trimethylaluminum (TMA) gas may be used as the Al source, and trimethylindium (TMI) gas is used as the In source. Use it. Furthermore, monosilane gas (SiH ₄ gas) may be used as the Si source, and cyclopentadienyl magnesium gas, methylcyclopentadienyl magnesium, or biscyclopentadienyl magnesium (Cp ₂ Mg) may be used as the Mg source. . In addition to Si, examples of n-type impurities (n-type dopants) include Ge, Se, Sn, C, Te, S, O, Pd, and Po. As p-type impurities (p-type dopants), In addition to Mg, Zn, Cd, Be, Ca, Ba, C, Hg, and Sr can be mentioned.

  In general, the second electrode (or the second electrode formed on the contact layer) electrically connected to the second compound semiconductor layer having the p-type conductivity generally includes palladium (Pd), platinum (Pt), It has a single layer configuration or a multilayer configuration including at least one metal selected from the group consisting of nickel (Ni), Al (aluminum), Ti (titanium), gold (Au), and silver (Ag) Preferably, a transparent conductive material such as ITO (Indium Tin Oxide) can also be used. On the other hand, the first electrode electrically connected to the first compound semiconductor layer having n-type conductivity is gold (Au), silver (Ag), palladium (Pd), Al (aluminum), Ti (titanium). Having a single layer configuration or a multilayer configuration including at least one metal selected from the group consisting of tungsten (W), Cu (copper), Zn (zinc), tin (Sn) and indium (In) Desirably, for example, Ti / Au, Ti / Al, Ti / Pt / Au can be exemplified. The first electrode and the second electrode can be formed (film formation) by, for example, a PVD method such as a vacuum evaporation method or a sputtering method. The first electrode is electrically connected to the first compound semiconductor layer. The first electrode is formed on the first compound semiconductor layer, and the first electrode is interposed through a conductive material layer or a conductive substrate. A form connected to the first compound semiconductor layer is included. Although the second electrode is formed on the second compound semiconductor layer, in some cases, the second electrode may be connected to the second compound semiconductor layer through a conductive material layer.

  A pad electrode may be provided on the first electrode or the second electrode for electrical connection with an external electrode or circuit. The pad electrode has a single-layer configuration or a multi-layer configuration including at least one metal selected from the group consisting of Ti (titanium), aluminum (Al), Pt (platinum), Au (gold), and Ni (nickel). It is desirable to have. Alternatively, the pad electrode may have a multilayer configuration exemplified by a multilayer configuration of Ti / Pt / Au and a multilayer configuration of Ti / Au.

  The present invention is applied to, for example, an optical disc system, a communication field, an optical information field, an optoelectronic integrated circuit, a field applying a nonlinear optical phenomenon, an optical switch, a laser measurement field, various analysis fields, an ultrafast spectroscopy field, a multiphoton excitation spectroscopy field. , Mass spectrometric field, field of microspectroscopy using multiphoton absorption, quantum control of chemical reaction, nano 3D processing field, various processing fields applying multiphoton absorption, medical field, bio-imaging field be able to.

  Example 1 relates to a semiconductor laser device, a driving method thereof, and a semiconductor laser device according to the first aspect of the present invention, the second aspect of the present invention, and further, the first structure, the second structure, and the fourth structure. The present invention relates to a semiconductor laser element having the structure A conceptual diagram of the semiconductor laser device of Example 1 is shown in FIG. 1A or FIG. 1B, and a rectangular pulse voltage applied to the semiconductor laser element is schematically shown in FIG. 1C or FIG. Shown in FIG. 2 is a schematic cross-sectional view of the semiconductor laser device when the semiconductor laser device is cut along a virtual vertical plane (YZ plane) orthogonal to the resonator direction (X direction) of the semiconductor laser device of Example 1. FIG. 3 is a schematic cross-sectional view of the semiconductor laser device when the semiconductor laser device is cut along a virtual vertical plane (XZ plane) including the cavity direction of the semiconductor laser device.

  As shown in FIG. 1A, a semiconductor laser device including an ultrashort pulse / ultra-high output semiconductor laser element according to the first embodiment includes a pulse generator 10 and a drive pulse from the pulse generator 10. It is comprised from the semiconductor laser element 20 driven by. Specifically, the semiconductor laser device includes a GaN-based semiconductor laser element 20 having a light emission wavelength of 405 nm band, and a high-power pulse generator 10 that causes the GaN-based semiconductor laser element 20 to perform a gain switching operation. Although the DC constant current power source 11 is provided, the DC constant current power source 11 may not be provided as shown in FIG. Here, the DC constant current power supply 11 has a well-known circuit configuration, and the pulse generator 10 can be configured by combining a low voltage pulse generator and a high output voltage amplifier.

The voltage (drive pulse) applied to the semiconductor laser element 20 is a rectangular pulse voltage V ₂ having a time width (pulse width) t _p as shown in FIG. Since the DC constant current power supply 11 is provided, a rectangular pulse voltage V ₂ having a time width t _p is added to the DC voltage V ₁ . Here, the DC voltage V ₁ is derived from the current (value: I ₁ ) supplied from the DC constant current power supply 11, the internal resistance R of the semiconductor laser element 20, and the build-in potential V _{0 of the} pn junction.
V ₁ = R × I ₁ + V ₀ ≈V ₀ = 3 volts. However, the wiring resistance, the contact resistance between the wiring and the semiconductor laser element 20, etc. are ignored. In the circuit configuration shown in FIG. 1 (B), as shown in FIG. 1 (D), the voltage applied to the semiconductor laser element 20 is rectangular pulse voltage V ₂ of the time width t _p It is.

The semiconductor laser device 20 according to the first embodiment is a semiconductor laser device having a ridge stripe type separated confinement heterostructure (SCH structure). Specifically, the semiconductor laser element 20 is a GaN-based semiconductor laser element made of an index guide type AlGaInN developed for a Blu-ray optical disc system, and has a ridge stripe structure. The specification is that the absolute maximum rated light output is 120 milliwatts for continuous operation and 250 milliwatts for pulse drive (7.5 nanoseconds, duty ratio 50%). The standard value of the emission wavelength is 405 nm, the threshold current value I _th (standard value of the oscillation start current) is 40 milliamperes, and the radiation angle (horizontal direction) of the laser light emitted from the end face of the semiconductor laser element 20 is parallel to the active layer. The standard values of the beam radiation half-value angle θ //) and the vertical radiation angle (vertical beam radiation half-value angle θ⊥) are 8 degrees and 21 degrees, respectively. ) Is a high-power semiconductor laser device with reduced optical confinement. The resonance length is 0.8 mm.

As shown in a schematic cross-sectional view in FIG. 2, the semiconductor laser device 20 of Example 1 is provided on the (0001) plane of the n-type GaN substrate 21.
(A) a stacked structure including a first compound semiconductor layer 30 containing an n-type impurity, an active layer 40 having a quantum well structure, and a second compound semiconductor layer 50 containing a p-type impurity,
(B) a first electrode 61 electrically connected to the first compound semiconductor layer 30, and
(C) a second electrode 62 electrically connected to the second compound semiconductor layer 50;
It has. The first compound semiconductor layer 30, the active layer 40, and the second compound semiconductor layer 50 are made of a GaN-based compound semiconductor, specifically, an AlGaInN-based compound semiconductor.

The second compound semiconductor layer 50 includes an electron barrier layer 53 having a thickness of 1.5 × 10 ⁻⁸ m (15 nm) or more, specifically, a p-type AlGaN electron barrier layer having a thickness of 15 nm or 30 nm. 53 is provided. The distance (d) from the electron barrier layer 53 to the active layer 40 is 8 × 10 ⁻⁸ m (80 nm) or less, specifically, 40 nm.

More specifically, the semiconductor laser element 20 has a layer configuration shown in Table 1 below. Here, in Table 1, the compound semiconductor layer described below is a layer closer to the n-type GaN substrate 21. The band gap of the compound semiconductor constituting the well layer in the active layer 40 is 3.06 eV. The composition ratio of Al in the electron barrier layer 53 is higher than the average composition ratio of Al in the cladding layer 54. Specifically, the composition ratio of Al in the electron barrier layer 53 is 0.18 (Al _0.18 Ga _0.82 N), and the average composition ratio of Al in the cladding layer 54 is 0.03.

[Table 1]
Second compound semiconductor layer 50
p-type GaN contact layer (Mg doped) 55
p-type GaN (Mg doped) / AlGaN superlattice cladding layer 54
p-type Al _0.18 Ga _0.82 N electron barrier layer (Mg doped) 53
Non-doped AlGaN lower cladding layer 52
Non-doped GaInN optical guide layer 51
Active layer 40
GaInN quantum well active layer (well layer: Ga _0.92 In _0.08 N / barrier layer: Ga _0.98 In _0.02 N)
First compound semiconductor layer 30
n-type GaN cladding layer 32
n-type AlGaN cladding layer 31

The p-type GaN contact layer 55 and the p-type GaN / AlGaN superlattice clad layer 54 are partially removed by the RIE method to form a ridge portion 56 having a width of 1.4 μm. A laminated insulating film 57 made of SiO ₂ / Si is formed on both sides of the ridge portion 56. The SiO ₂ layer is the lower layer and the Si layer is the upper layer. Here, the distance (D) from the top surface of the portion of the second compound semiconductor layer 50 located outside the both side surfaces of the ridge portion 56 to the active layer 40 is 1.0 × 10 ⁻⁷ m or more, specifically Is 120 nm. Further, the difference between the effective refractive index of the ridge 56 and the effective refractive index of the laminated insulating film 57 is 5 × 10 ^{−3 to} 1 × 10 ⁻² , specifically 7 × 10 ⁻³ . A second electrode (p-type ohmic electrode, p-side electrode) 62 made of Pd / Pt / Au is formed on the p-type GaN contact layer 55 corresponding to the top surface of the ridge portion 56. On the other hand, a first electrode (n-type ohmic electrode, n-side electrode) 61 made of Ti / Pt / Au is formed on the back surface of the n-type GaN substrate 21.

The p-type GaN / AlGaN superlattice cladding layer 54 having a superlattice structure in which p-type GaN layers and p-type AlGaN layers are alternately stacked has a thickness of 0.7 μm or less, specifically 0.4 μm. And the thickness of the p-type GaN layer constituting the superlattice structure is 2.5 nm, the thickness of the p-type AlGaN layer constituting the superlattice structure is 2.5 nm, and the p-type GaN layer and the p-type AlGaN The total number of layers is 160 layers. The distance from the active layer 40 to the second electrode 62 is 1 μm or less, specifically 0.6 μm. Further, the p-type AlGaN electron barrier layer 53, the p-type GaN / AlGaN superlattice cladding layer 54, and the p-type GaN contact layer 55 constituting the second compound semiconductor layer 50 have a Mg content of 1 × 10 ¹⁹ cm ^−3. More than this (specifically, 2 × 10 ¹⁹ cm ⁻³ ) is doped. Further, in the second compound semiconductor layer 50, non-doped compound semiconductor layers (non-doped GaInN light guide layer 51 and non-doped AlGaN lower cladding layer 52) are provided between the active layer 40 and the electron barrier layer 53 from the active layer side. It has been.

  The semiconductor laser device of Example 1 is the semiconductor laser device having the first configuration, and the active layer 40 is composed of a carrier injection region and a carrier non-injection region. That is, the semiconductor laser device of Example 1 is a multi-section type semiconductor laser device in which a carrier injection region (light emitting region, gain region 40A) and a carrier non-injection region (saturable absorption region 40B) are juxtaposed in the cavity direction. It is a kind. Here, the arrangement state of the carrier injection region and the carrier non-injection region is specifically N (where N = 2 in the first embodiment) as shown in FIG. And (N-1) carrier injection regions, and a carrier non-injection region is arranged with the carrier injection region interposed therebetween. The carrier non-injection region is located at the end of the resonator and has a length of 5 μm.

  Alternatively, the semiconductor laser element of Example 1 is a semiconductor laser element having the second configuration, and the length of the second electrode 62 is shorter than the length of the active layer 40. That is, the multi-section type semiconductor in which the light emitting region 40A (the portion of the active layer 40 positioned immediately below the second electrode 62) and the saturable absorption region 40B (the other portion of the active layer 40) are juxtaposed in the resonator direction. It is a kind of laser element. Here, N (however, in Example 1, N = 2) saturable absorption regions 40B and (N-1) light emitting regions 40A are provided, and the saturable absorption regions 40B are light emitting regions. 40A is disposed between them. By adopting such a structure, the light emitting end face of the semiconductor laser element is hardly damaged.

In the semiconductor laser element or driving method of Example 1, 10 times more values of I _th of the threshold current, preferably 20 or more times the value, more preferably the pulse current having a value more than 50 times The semiconductor laser element is driven. This current value is a value far exceeding the current value (rated current) necessary for obtaining the rated light output. Alternatively, in the method of driving the semiconductor laser device according to the first embodiment, a pulse having a value that is two times or more, preferably four times or more, more preferably ten times or more the threshold voltage value _Vth. The semiconductor laser element is driven with a voltage. Further, the semiconductor laser device 20 of the first embodiment or the semiconductor laser device 20 constituting the semiconductor laser device of the first embodiment has a value that is 10 times or more, preferably 20 times or more the threshold current value I _th . More preferably, it is driven by a pulse current having a value of 50 times or more, and is driven by a pulse current far exceeding the rated current. Alternatively, the semiconductor laser element 20 of the first embodiment or the semiconductor laser element 20 constituting the semiconductor laser device of the first embodiment has a value that is twice or more, preferably four times or more the threshold voltage value V _th. More preferably, it is driven by a pulse voltage having a value of 10 times or more.

  In the semiconductor laser device of Example 1, the thickness of the electron barrier layer 53 is defined. Further, the distance (d) between the electron barrier layer 53 and the active layer 40 is defined, and further, the top surface of the portion of the second compound semiconductor layer 50 located outside the both side surfaces of the ridge portion 56. A distance (D) from the active layer 40 to the active layer 40 is defined. That is, the light emitting region 40A is surrounded by the saturable absorption region 40B. More specifically, the light emitting region 40A (corresponding to the carrier injection region) is surrounded by the saturable absorption region 40B (corresponding to the carrier non-injection region) regardless of whether it is in the X direction or the Y direction. ing. Since the light emitting region 40A is surrounded by the saturable absorption region 40B in this way, carriers in the saturable absorption region 40B can flow into the light emitting region 40A during high current injection, and the Q switch effect is greatly improved. It is considered that the peak power has further increased.

In Example 1, the thickness of the electron barrier layer 53 is 7.5 nm, 10 nm, 12.5 nm, 15 nm, and 30 nm, and the distance (d) between the electron barrier layer 53 and the active layer 40 is 40 nm. A laser element was produced. The applied voltage to the second electrode 62 was 48 volts, the first electrode 61 was grounded, the pulse width of the pulse current and pulse voltage was 6 nanoseconds, and the peak power of the semiconductor laser device was measured at room temperature. . The value of 2.5 amps pulsed current, when converted into the active layer 1 cm ² per (joining region area 1 cm ² per), i.e., (a operating current density, unit ampere / cm ²⁾ current density at When converted, it was about 2.2 × 10 ⁵ amperes / cm ² . The results are shown in FIG. 14 with white diamonds. A peak power of 120 watts could be achieved by setting the thickness of the electron barrier layer 53 to 30 nm. The wavelength of the pulsed laser beam was 405 ± 5 nm. Even when the pulse width of the pulse current and pulse voltage was set to 4 nanoseconds, the peak power of 90 watts could be achieved by setting the thickness of the electron barrier layer 53 to 30 nm (see white circles). . The peak power value is as low as about 4 watts until the thickness of the electron barrier layer 53 is 12.5 nm. However, when the thickness of the electron barrier layer 53 was 15 nm, the peak power increased rapidly to 70 watts. In addition, when the distance (d) between the electron barrier layer 53 and the active layer 40 was 82 nm, high peak power could not be obtained even when the thickness of the electron barrier layer 53 was 20 nm.

In the semiconductor laser device of Example 1 having such a configuration, the second compound semiconductor layer 50 is provided with the electron barrier layer 53 having a thickness of 1.5 × 10 ⁻⁸ m (15 nm) or more, and the semiconductor laser device is formed. By driving with a pulse current having a value 10 times or more of the threshold current value I _th , or by driving the semiconductor laser element with a pulse voltage having a value more than twice the value of the threshold voltage V _th , 70 An ultrashort pulse / high output semiconductor laser element that emits laser light having a peak power of watts or more was obtained.

  The results of investigating the relationship between the pulse width of the pulse current or pulse voltage and the laser oscillation state are shown in FIGS. As is apparent from these drawings, when the pulse width is 1.5 to 3.5 nanoseconds, laser oscillation occurs simultaneously with or after the fall of the pulse current or pulse voltage. Yes. Further, the peak power of the laser beam increases as the pulse width of the pulse current or pulse voltage increases. The optical pulse width is 1 picosecond to 30 picoseconds. On the other hand, when the pulse width is 4.0 nanoseconds and 4.5 nanoseconds, laser oscillation occurs after the rise of the pulse current or pulse voltage but before the fall. The increase in the peak power of the laser beam is not significant. In addition, a plurality of peaks are generated. From these results, it is possible to obtain the optimum pulse current or pulse width of the pulse voltage for obtaining a desired peak power by performing such a test in the semiconductor laser device.

  As a modification of the semiconductor laser device of Example 1, as shown in FIG. 4, a schematic cross-sectional view of the semiconductor laser device when cut along a virtual vertical plane (XZ plane) including the resonator direction is used. For example, boron (B), aluminum (Al) may be applied to a portion of the second compound semiconductor layer 50 located above the implantation region or to a portion of the second compound semiconductor layer 50 located above the saturable absorption region 40B. ), A high resistance region 50A is formed by ion implantation of ions such as silicon (Si), and thereby a structure that more reliably restricts (suppresses) the current flowing into the saturable absorption region 40B may be employed. .

  The second embodiment is a modification of the first embodiment. In the second embodiment, as shown in a schematic cross-sectional view of the semiconductor laser device when cut along a virtual vertical plane (XZ plane) including the resonator direction in FIG. In this case, N = 2) carrier injection regions and (N-1) carrier non-injection regions are provided, and the carrier injection regions are arranged with the carrier non-injection region interposed therebetween. Alternatively, N light emitting regions (gain regions) 40A and (N-1) saturable absorbing regions 40B are provided, and the light emitting regions 40A are arranged with the saturable absorbing regions 40B interposed therebetween.

  Alternatively, in the semiconductor laser device of the second embodiment, the second electrode 62 is separated into two by the separation groove 63. Specifically, the width of the separation groove 63 is 20 μm.

  The configuration and structure of the semiconductor laser device of the second embodiment can be the same as the configuration and structure of the semiconductor laser device of the first embodiment except that the structure of the second electrode 62 is different. To do. The semiconductor laser element driving method and the semiconductor laser device of the second embodiment can be the same as the semiconductor laser element driving method and the semiconductor laser device of the first embodiment, and a detailed description thereof will be omitted.

  With reference to FIGS. 6 to 10, which are schematic cross-sectional views of the semiconductor laser device when cut along a virtual vertical plane (XZ plane) including the resonator direction, a modification of the semiconductor laser device of Example 2 is as follows. This will be described below.

  The semiconductor laser element shown in FIG. 6 is a modification of the semiconductor laser element shown in FIG. In this semiconductor laser element, N (however, in this case, N = 3) carrier non-injection regions and (N−1) carrier injection regions are provided. Are arranged across the carrier injection region. Alternatively, N (= 3) saturable absorption regions and (N−1) light emitting regions are provided, and the saturable absorption regions are arranged with the light emitting region interposed therebetween.

  The semiconductor laser element shown in FIG. 7 is also a modification of the semiconductor laser element shown in FIG. In this semiconductor laser element, N (in this case, N = 4) carrier non-injection regions and (N−1) carrier injection regions are provided. Are arranged across the carrier injection region. Alternatively, N (= 4) saturable absorption regions and (N−1) light emitting regions are provided, and the saturable absorption regions are arranged with the light emitting region interposed therebetween.

  The semiconductor laser device shown in FIGS. 8, 9 and 10 is a modification of the semiconductor laser device shown in FIGS. In these semiconductor laser elements, a portion of the second compound semiconductor layer 50 located above the carrier non-injection region or a portion of the second compound semiconductor layer 50 located above the saturable absorption region 40B. Further, for example, ions of boron (B), aluminum (Al), silicon (Si), etc. are ion-implanted to form the high resistance region 50A. As a result, the current flowing into the saturable absorption region 40B can be more reliably limited (suppressed).

  Example 3 is also a modification of Example 1, and further relates to a semiconductor laser device having a third configuration. In Example 3, as shown in the schematic cross-sectional view of the semiconductor laser device when cut along a virtual vertical plane (XZ plane) including the resonator direction in FIG. 11, the second electrode includes the first portion. 62A and the second portion 62B are separated by a separation groove 63. The width of the separation groove is 20 μm. In the example shown in FIG. 11, two first portions 62A of the second electrode sandwich one second portion 62B.

  Even in the third embodiment, N (however, in the third embodiment, N = 2) carrier injection regions and (N−1) carrier non-injection regions are provided. The region is arranged with the carrier non-injection region interposed therebetween. Alternatively, N light emitting regions (gain regions) 40A and (N-1) saturable absorbing regions 40B are provided, and the light emitting regions 40A are arranged with the saturable absorbing regions 40B interposed therebetween. Alternatively, the entire length of the second electrode is shorter than the length of the active layer.

The electrical resistance value between the first part 62A and the second part 62B of the second electrode 62 (sometimes referred to as “separation resistance value”) is the electrical resistance between the second electrode 62 and the first electrode 61. It is 1 × 10 times or more of the value, specifically 1.5 × 10 ³ times. The electrical resistance value (separation resistance value) between the first portion 62A and the second portion 62B of the second electrode 62 is 1 × 10 ² Ω or more, specifically, 1.5 × 10 ⁴ Ω. is there.

  In the semiconductor laser device of Example 3, a pulse current or pulse voltage is applied to the first portion 62A of the second electrode, while a current is passed through the second portion 62B of the second electrode, or the second electrode By applying a voltage to the second portion 62B, an electric field is applied to the saturable absorption region 40B. A pulse current or pulse voltage synchronized with the pulse current or pulse voltage applied to the first portion 62A of the second electrode may be applied to the second portion 62B of the second electrode, or a DC bias may be applied. Good. The applied voltage to the second portion 62B of the second electrode may be forward bias or reverse bias. The voltage applied to the first portion 62A of the second electrode is higher than the voltage applied to the second portion 62B of the second electrode. And, by appropriately controlling the second portion 62B of the second electrode in this way, carriers in the saturable absorption region 40B can flow into the light emitting region 40A at the time of high current injection, and the Q switch effect is greatly increased. Peak power can be further increased.

Incidentally, it is preferable to form the two electrodes 62 having a separation resistance value of 1 × 10 ² Ω or more on the second compound semiconductor layer 50. However, in the case of a GaN-based semiconductor laser device, In contrast, since the mobility in the compound semiconductor having the p-type conductivity is small, the second compound semiconductor layer 50 having the p-type conductivity is formed on the second compound semiconductor layer 50 without being increased in resistance by ion implantation or the like. By separating the two electrodes 62 by the separation groove 63, the electric resistance value between the first portion 62 </ b> A and the second portion 62 </ b> B of the second electrode 62 is changed to the electric resistance between the second electrode 62 and the first electrode 61. The electric resistance value between the first portion 62A and the second portion 62B of the second electrode 62 can be 1 × 10 ² Ω or more.

Here, the second electrode 62 desirably has the following characteristics. That is,
(1) It has a function as an etching mask when the second compound semiconductor layer 50 is etched.
(2) The second electrode 62 can be wet-etched without causing deterioration in the optical and electrical characteristics of the second compound semiconductor layer 50.
(3) When a film is formed on the second compound semiconductor layer 50, the contact specific resistance value is 10 ⁻² Ω · cm ² or less.
(4) In the case of a laminated structure, the material constituting the lower metal layer has a large work function, exhibits a low contact specific resistance value with respect to the second compound semiconductor layer 50, and can be wet etched.
(5) In the case of a laminated structure, the material constituting the upper metal layer is resistant to etching (for example, Cl ₂ gas used in the RIE method) when forming the ridge structure, and Can be wet etched.

  In Example 3, the second electrode 62 was composed of a Pd single layer having a thickness of 0.1 μm.

  The basic configuration and structure of the semiconductor laser device of Example 3 can be the same as the configuration and structure of the semiconductor laser device of Example 1 except that the structure of the second electrode 62 is different. Description is omitted. The semiconductor laser element driving method and semiconductor laser device of the third embodiment can be the same as the semiconductor laser element driving method and semiconductor laser device of the first embodiment, and thus detailed description thereof is omitted.

  With reference to FIG. 12 and FIG. 13 which are schematic cross-sectional views of the semiconductor laser element when cut along a virtual vertical plane (XZ plane) including the resonator direction, a modification of the semiconductor laser element of Example 3 is This will be described below.

  In the semiconductor laser element shown in FIG. 12, two second portions 62B of the second electrode sandwich one first portion 62A. In the semiconductor laser element shown in FIG. 13, four second portions 62B and three first portions 62A of the second electrode are provided, and the second portion 62B sandwiches the first portion 62A. Even in these cases, N carrier non-injection regions and (N-1) carrier injection regions are provided, and the carrier non-injection regions are arranged with the carrier injection region interposed therebetween. Alternatively, N saturable absorption regions and (N−1) light emitting regions are provided, and the saturable absorption regions are arranged with the light emitting region interposed therebetween. Alternatively or alternatively, the entire length of the second electrode is shorter than the length of the active layer.

  Hereinafter, with reference to FIGS. 18A and 18B, FIGS. 19A and 19B, and FIG. 20, a manufacturing method of the semiconductor laser device of Example 3 will be described. 18A, 18B, and 19A, 19B are schematic partial cross-sectional views when the substrate or the like is cut along the YZ plane, and FIG. It is a typical partial end view when a board | substrate etc. are cut | disconnected by XZ plane.

[Step-300]
First, on the (0001) plane of the n-type GaN substrate 21, a first compound semiconductor layer 30 having a first conductivity type (n-type conductivity type) and made of a GaN-based compound semiconductor, based on a well-known MOCVD method, GaN A GaN-based compound having a light-emitting region (gain region) 40A and a saturable absorption region 40B made of a compound semiconductor and a second conductivity type (p-type conductivity type) different from the first conductivity type A second compound semiconductor layer 50 made of a semiconductor is sequentially stacked to form a stacked structure (see FIG. 18A).

[Step-310]
Thereafter, a strip-shaped second electrode 62 is formed on the second compound semiconductor layer 50. Specifically, after forming a Pd layer 62C on the entire surface based on a vacuum deposition method (see FIG. 18B), a strip-shaped etching resist layer is formed on the Pd layer 62C based on a photolithography technique. . Then, after removing the Pd layer 62C not covered with the etching resist layer using aqua regia, the etching resist layer is removed. In this way, the structure shown in FIG. 19A can be obtained. Note that the strip-shaped second electrode 62 may be formed on the second compound semiconductor layer 50 based on a lift-off method.

[Step-320]
Next, a part of the second compound semiconductor layer 50 is etched using the second electrode 62 as an etching mask to form a ridge structure. Specifically, based on the RIE method using Cl ₂ gas, a part of the second compound semiconductor layer 50 is etched using the second electrode 62 as an etching mask. Thus, the structure shown in FIG. 19B can be obtained. As described above, since the ridge structure is formed by the self-alignment method using the second electrode 62 patterned in a band shape as an etching mask, there is no misalignment between the second electrode 62 and the ridge structure.

[Step-330]
Thereafter, a resist layer 64 for forming the separation groove 63 in the second electrode 62 is formed (see FIG. 20). Reference numeral 65 is an opening provided in the resist layer 64 in order to form the separation groove 63. Next, using the resist layer 64 as a wet etching mask, a separation groove 63 is formed in the second electrode 62 by a wet etching method, whereby the second electrode 62 is separated into the first portion 62A and the second portion 62B. 63 to separate. More specifically, the separation groove 63 is formed in the second electrode 62 by using aqua regia as an etchant and immersing the whole in aqua regia for about 10 seconds. Thereafter, the resist layer 64 is removed. In this way, the structure shown in FIG. 11 can be obtained. As described above, unlike the dry etching method, the wet etching method is employed, so that the optical and electrical characteristics of the second compound semiconductor layer 50 are not deteriorated. Therefore, the light emission characteristics of the semiconductor laser element do not deteriorate. When the dry etching method is employed, the internal loss α _{i of} the second compound semiconductor layer 50 increases, which may increase the threshold voltage or decrease the light output. Here, when the etching rate of the second electrode 62 is ER ₀ and the etching rate of the laminated structure is ER ₁ ,
ER ₀ / ER ₁ ≒ 1 × 10 ²
It is. As described above, since a high etching selection ratio exists between the second electrode 62 and the second compound semiconductor layer 50, the stacked structure is not etched (or slightly etched). The two electrodes 62 can be reliably etched.

[Step-340]
Thereafter, an n-side electrode is formed, the substrate is cleaved, and further packaged, whereby a semiconductor laser element can be manufactured.

  As described above, in the method of manufacturing the semiconductor laser device of Example 3, a part of the second compound semiconductor layer is etched using the band-shaped second electrode as an etching mask to form a ridge structure. As described above, since the ridge structure is formed by the self-alignment method using the patterned second electrode as an etching mask, misalignment does not occur between the second electrode and the ridge structure. Further, a separation groove is formed in the second electrode by a wet etching method. As described above, unlike the dry etching method, by adopting the wet etching method, it is possible to suppress the deterioration of the optical and electrical characteristics in the second compound semiconductor layer. Therefore, it is possible to reliably prevent the light emission characteristics of the semiconductor laser element from being deteriorated.

In the semiconductor laser device of Example 3, the electrical resistance value between the first portion and the second portion of the second electrode is 10 times the electrical resistance value between the second electrode and the first electrode. More than twice, or more than 1 × 10 ² Ω. Therefore, the leakage current flow from the first part to the second part of the second electrode can be reliably suppressed. That is, the current injected into the light emitting region (gain region) can be increased, and at the same time, for example, the reverse bias voltage applied to the saturable absorption region can be increased, so that a pulsed laser beam with stronger peak power can be emitted. it can. And, such a high electrical resistance value between the first part and the second part of the second electrode can be achieved simply by separating the second electrode into the first part and the second part by the separation groove. it can.

  As mentioned above, although this invention was demonstrated based on the preferable Example, this invention is not limited to these Examples. The configuration and structure of the semiconductor laser element and the configuration of the semiconductor laser device described in the embodiments are examples, and can be appropriately changed. In the examples, various values are shown, but these are also exemplifications. For example, if the specifications of the semiconductor laser element to be used are changed, it is natural that the values change. For example, in Example 3, the second electrode may have a stacked structure of a lower metal layer made of palladium (Pd) having a thickness of 20 nm and an upper metal layer made of nickel (Ni) having a thickness of 200 nm. In wet etching with aqua regia, the nickel etching rate is about 1.25 times the palladium etching rate.

DESCRIPTION OF SYMBOLS 10 ... Pulse generator, 11 ... DC constant current power supply, 20 ... Semiconductor laser element, 21 ... n-type GaN substrate, 30 ... 1st compound semiconductor layer, 31 ... n-type AlGaN cladding layer, 32... N-type GaN cladding layer, 40... Active layer, 40 A... Light emitting region (carrier injection region), 40 B. ..Second compound semiconductor layer, 51... Non-doped GaInN light guide layer, 52... Non-doped AlGaN lower cladding layer, 53... P-type AlGaN electron barrier layer (Mg doped), 54. (Mg-doped) / AlGaN superlattice cladding layer, 55... P-type GaN contact layer (Mg-doped), 56... Ridge portion, 57. ..No. Electrodes, a first portion of 62A ... second electrode, a second portion of the 62B ... second electrode, 62C ... Pd layer, 64 ... resist layer, 65 ... opening

Claims (20)

(A) a laminated structure including a first compound semiconductor layer containing an n-type impurity, an active layer having a quantum well structure, and a second compound semiconductor layer containing a p-type impurity,
(B) a first electrode electrically connected to the first compound semiconductor layer, and
(C) a second electrode electrically connected to the second compound semiconductor layer;
With
The second compound semiconductor layer is provided with an electron barrier layer having a thickness of 1.5 × 10 ⁻⁸ m or more,
The second electrode is separated into a first part and a second part by a separation groove,
A semiconductor laser element driven by a pulse current having a value of 10 times or more of a threshold current value. (A) a laminated structure including a first compound semiconductor layer containing an n-type impurity, an active layer having a quantum well structure, and a second compound semiconductor layer containing a p-type impurity,
(B) a first electrode electrically connected to the first compound semiconductor layer, and
(C) a second electrode electrically connected to the second compound semiconductor layer;
With
The second compound semiconductor layer is provided with an electron barrier layer having a thickness of 1.5 × 10 ⁻⁸ m or more,
The second electrode is separated into a first part and a second part by a separation groove,
The laminated structure is made of an AlGaInN-based compound semiconductor,
The second compound semiconductor layer has at least a laminated structure of an electron barrier layer and a clad layer from the active layer side,
The cladding layer has a superlattice structure in which p-type GaN layers and p-type AlGaN layers are alternately stacked,
The electron barrier layer is composed of a p-type AlGaN layer,
The composition ratio of Al in the electron barrier layer is higher than the average composition ratio of Al in the cladding layer,
A semiconductor laser element driven by a pulse current having a value of 10 times or more of a threshold current value. (A) a laminated structure including a first compound semiconductor layer containing an n-type impurity, an active layer having a quantum well structure, and a second compound semiconductor layer containing a p-type impurity,
(B) a first electrode electrically connected to the first compound semiconductor layer, and
(C) a second electrode electrically connected to the second compound semiconductor layer;
With
The second compound semiconductor layer is provided with an electron barrier layer having a thickness of 1.5 × 10 ⁻⁸ m or more,
The active layer is composed of a carrier injection region and a carrier non-injection region, or the length of the second electrode is shorter than the length of the active layer,
The laminated structure is made of an AlGaInN-based compound semiconductor,
The second compound semiconductor layer has at least a laminated structure of an electron barrier layer and a clad layer from the active layer side,
The cladding layer has a superlattice structure in which p-type GaN layers and p-type AlGaN layers are alternately stacked,
The electron barrier layer is composed of a p-type AlGaN layer,
The composition ratio of Al in the electron barrier layer is higher than the average composition ratio of Al in the cladding layer,
When the composition of the electron barrier layer is expressed as Al _x Ga _1-x N, 0.15 ≦ x ≦ 0.25,
A semiconductor laser element driven by a pulse current having a value of 10 times or more of a threshold current value. (A) a laminated structure including a first compound semiconductor layer containing an n-type impurity, an active layer having a quantum well structure, and a second compound semiconductor layer containing a p-type impurity,
(B) a first electrode electrically connected to the first compound semiconductor layer, and
(C) a second electrode electrically connected to the second compound semiconductor layer;
With
The second compound semiconductor layer is provided with an electron barrier layer having a thickness of 1.5 × 10 ⁻⁸ m or more,
The second electrode is separated into a first part and a second part by a separation groove,
A semiconductor laser device that is driven by a pulse voltage having a value that is twice or more the threshold voltage value. (A) a laminated structure including a first compound semiconductor layer containing an n-type impurity, an active layer having a quantum well structure, and a second compound semiconductor layer containing a p-type impurity,
(B) a first electrode electrically connected to the first compound semiconductor layer, and
(C) a second electrode electrically connected to the second compound semiconductor layer;
With
The second compound semiconductor layer is provided with an electron barrier layer having a thickness of 1.5 × 10 ⁻⁸ m or more,
The second electrode is separated into a first part and a second part by a separation groove,
The laminated structure is made of an AlGaInN-based compound semiconductor,
The second compound semiconductor layer has at least a laminated structure of an electron barrier layer and a clad layer from the active layer side,
The cladding layer has a superlattice structure in which p-type GaN layers and p-type AlGaN layers are alternately stacked,
The electron barrier layer is composed of a p-type AlGaN layer,
The composition ratio of Al in the electron barrier layer is higher than the average composition ratio of Al in the cladding layer,
A semiconductor laser device that is driven by a pulse voltage having a value that is twice or more the threshold voltage value. (A) a laminated structure including a first compound semiconductor layer containing an n-type impurity, an active layer having a quantum well structure, and a second compound semiconductor layer containing a p-type impurity,
(B) a first electrode electrically connected to the first compound semiconductor layer, and
(C) a second electrode electrically connected to the second compound semiconductor layer;
With
The second compound semiconductor layer is provided with an electron barrier layer having a thickness of 1.5 × 10 ⁻⁸ m or more,
The active layer is composed of a carrier injection region and a carrier non-injection region, or the length of the second electrode is shorter than the length of the active layer,
The laminated structure is made of an AlGaInN-based compound semiconductor,
The second compound semiconductor layer has at least a laminated structure of an electron barrier layer and a clad layer from the active layer side,
The cladding layer has a superlattice structure in which p-type GaN layers and p-type AlGaN layers are alternately stacked,
The electron barrier layer is composed of a p-type AlGaN layer,
The composition ratio of Al in the electron barrier layer is higher than the average composition ratio of Al in the cladding layer,
When the composition of the electron barrier layer is expressed as Al _x Ga _1-x N, 0.15 ≦ x ≦ 0.25,
A semiconductor laser device that is driven by a pulse voltage having a value that is twice or more the threshold voltage value. A semiconductor laser device comprising a pulse generator and a semiconductor laser element driven by a driving pulse from the pulse generator,
The semiconductor laser element is
(A) a laminated structure including a first compound semiconductor layer containing an n-type impurity, an active layer having a quantum well structure, and a second compound semiconductor layer containing a p-type impurity,
(B) a first electrode electrically connected to the first compound semiconductor layer, and
(C) a second electrode electrically connected to the second compound semiconductor layer;
With
The second compound semiconductor layer is provided with an electron barrier layer having a thickness of 1.5 × 10 ⁻⁸ m or more,
The second electrode is separated into a first part and a second part by a separation groove,
The semiconductor laser device is a semiconductor laser device that is driven by a pulse current having a value of 10 times or more the threshold current value. A semiconductor laser device comprising a pulse generator and a semiconductor laser element driven by a driving pulse from the pulse generator,
The semiconductor laser element is
(A) a laminated structure including a first compound semiconductor layer containing an n-type impurity, an active layer having a quantum well structure, and a second compound semiconductor layer containing a p-type impurity,
(B) a first electrode electrically connected to the first compound semiconductor layer, and
(C) a second electrode electrically connected to the second compound semiconductor layer;
With
The second compound semiconductor layer is provided with an electron barrier layer having a thickness of 1.5 × 10 ⁻⁸ m or more,
The second electrode is separated into a first part and a second part by a separation groove,
The laminated structure is made of an AlGaInN-based compound semiconductor,
The second compound semiconductor layer has at least a laminated structure of an electron barrier layer and a clad layer from the active layer side,
The cladding layer has a superlattice structure in which p-type GaN layers and p-type AlGaN layers are alternately stacked,
The electron barrier layer is composed of a p-type AlGaN layer,
The composition ratio of Al in the electron barrier layer is higher than the average composition ratio of Al in the cladding layer,
The semiconductor laser device is a semiconductor laser device that is driven by a pulse current having a value of 10 times or more the threshold current value. A semiconductor laser device comprising a pulse generator and a semiconductor laser element driven by a driving pulse from the pulse generator,
The semiconductor laser element is
(A) a laminated structure including a first compound semiconductor layer containing an n-type impurity, an active layer having a quantum well structure, and a second compound semiconductor layer containing a p-type impurity,
(B) a first electrode electrically connected to the first compound semiconductor layer, and
(C) a second electrode electrically connected to the second compound semiconductor layer;
With
The second compound semiconductor layer is provided with an electron barrier layer having a thickness of 1.5 × 10 ⁻⁸ m or more,
The active layer is composed of a carrier injection region and a carrier non-injection region, or the length of the second electrode is shorter than the length of the active layer,
The laminated structure is made of an AlGaInN-based compound semiconductor,
The second compound semiconductor layer has at least a laminated structure of an electron barrier layer and a clad layer from the active layer side,
The cladding layer has a superlattice structure in which p-type GaN layers and p-type AlGaN layers are alternately stacked,
The electron barrier layer is composed of a p-type AlGaN layer,
The composition ratio of Al in the electron barrier layer is higher than the average composition ratio of Al in the cladding layer,
When the composition of the electron barrier layer is expressed as Al _x Ga _1-x N, 0.15 ≦ x ≦ 0.25,
The semiconductor laser device is a semiconductor laser device that is driven by a pulse current having a value of 10 times or more the threshold current value. A semiconductor laser device comprising a pulse generator and a semiconductor laser element driven by a driving pulse from the pulse generator,
The semiconductor laser element is
(A) a laminated structure including a first compound semiconductor layer containing an n-type impurity, an active layer having a quantum well structure, and a second compound semiconductor layer containing a p-type impurity,
(B) a first electrode electrically connected to the first compound semiconductor layer, and
(C) a second electrode electrically connected to the second compound semiconductor layer;
With
The second compound semiconductor layer is provided with an electron barrier layer having a thickness of 1.5 × 10 ⁻⁸ m or more,
The second electrode is separated into a first part and a second part by a separation groove,
The semiconductor laser device is a semiconductor laser device that is driven by a pulse current having a value that is at least twice the value of the threshold voltage. A semiconductor laser device comprising a pulse generator and a semiconductor laser element driven by a driving pulse from the pulse generator,
The semiconductor laser element is
(A) a laminated structure including a first compound semiconductor layer containing an n-type impurity, an active layer having a quantum well structure, and a second compound semiconductor layer containing a p-type impurity,
(B) a first electrode electrically connected to the first compound semiconductor layer, and
(C) a second electrode electrically connected to the second compound semiconductor layer;
With
The second compound semiconductor layer is provided with an electron barrier layer having a thickness of 1.5 × 10 ⁻⁸ m or more,
The second electrode is separated into a first part and a second part by a separation groove,
The laminated structure is made of an AlGaInN-based compound semiconductor,
The second compound semiconductor layer has at least a laminated structure of an electron barrier layer and a clad layer from the active layer side,
The cladding layer has a superlattice structure in which p-type GaN layers and p-type AlGaN layers are alternately stacked,
The electron barrier layer is composed of a p-type AlGaN layer,
The composition ratio of Al in the electron barrier layer is higher than the average composition ratio of Al in the cladding layer,
The semiconductor laser device is a semiconductor laser device that is driven by a pulse current having a value that is at least twice the value of the threshold voltage. A semiconductor laser device comprising a pulse generator and a semiconductor laser element driven by a driving pulse from the pulse generator,
The semiconductor laser element is
(A) a laminated structure including a first compound semiconductor layer containing an n-type impurity, an active layer having a quantum well structure, and a second compound semiconductor layer containing a p-type impurity,
(B) a first electrode electrically connected to the first compound semiconductor layer, and
(C) a second electrode electrically connected to the second compound semiconductor layer;
With
The second compound semiconductor layer is provided with an electron barrier layer having a thickness of 1.5 × 10 ⁻⁸ m or more,
The active layer is composed of a carrier injection region and a carrier non-injection region, or the length of the second electrode is shorter than the length of the active layer,
The laminated structure is made of an AlGaInN-based compound semiconductor,
The second compound semiconductor layer has at least a laminated structure of an electron barrier layer and a clad layer from the active layer side,
The cladding layer has a superlattice structure in which p-type GaN layers and p-type AlGaN layers are alternately stacked,
The electron barrier layer is composed of a p-type AlGaN layer,
The composition ratio of Al in the electron barrier layer is higher than the average composition ratio of Al in the cladding layer,
When the composition of the electron barrier layer is expressed as Al _x Ga _1-x N, 0.15 ≦ x ≦ 0.25,
The semiconductor laser device is a semiconductor laser device that is driven by a pulse current having a value that is at least twice the value of the threshold voltage. (A) a laminated structure including a first compound semiconductor layer containing an n-type impurity, an active layer having a quantum well structure, and a second compound semiconductor layer containing a p-type impurity,
(B) a first electrode electrically connected to the first compound semiconductor layer, and
(C) a second electrode electrically connected to the second compound semiconductor layer;
With
A method of driving a semiconductor laser device, wherein the second compound semiconductor layer is provided with an electron barrier layer having a thickness of 1.5 × 10 ⁻⁸ m or more,
A method for driving a semiconductor laser device, which is driven by a pulse current having a value of 10 times or more of a threshold current value.   14. The method of driving a semiconductor laser device according to claim 13, wherein the second electrode is separated into a first portion and a second portion by a separation groove. The second electrode is separated into a first part and a second part by a separation groove,
The laminated structure is made of an AlGaInN-based compound semiconductor,
The second compound semiconductor layer has at least a laminated structure of an electron barrier layer and a clad layer from the active layer side,
The cladding layer has a superlattice structure in which p-type GaN layers and p-type AlGaN layers are alternately stacked,
The electron barrier layer is composed of a p-type AlGaN layer,
14. The method of driving a semiconductor laser device according to claim 13, wherein the Al composition ratio in the electron barrier layer is higher than the average Al composition ratio in the cladding layer. The active layer is composed of a carrier injection region and a carrier non-injection region, or the length of the second electrode is shorter than the length of the active layer,
The laminated structure is made of an AlGaInN-based compound semiconductor,
The second compound semiconductor layer has at least a laminated structure of an electron barrier layer and a clad layer from the active layer side,
The cladding layer has a superlattice structure in which p-type GaN layers and p-type AlGaN layers are alternately stacked,
The electron barrier layer is composed of a p-type AlGaN layer,
When the composition of the electron barrier layer is expressed as Al _x Ga _1-x N, 0.15 ≦ x ≦ 0.25,
14. The method of driving a semiconductor laser device according to claim 13, wherein the Al composition ratio in the electron barrier layer is higher than the average Al composition ratio in the cladding layer. (A) a laminated structure including a first compound semiconductor layer containing an n-type impurity, an active layer having a quantum well structure, and a second compound semiconductor layer containing a p-type impurity,
(B) a first electrode electrically connected to the first compound semiconductor layer, and
(C) a second electrode electrically connected to the second compound semiconductor layer;
With
A method of driving a semiconductor laser device, wherein the second compound semiconductor layer is provided with an electron barrier layer having a thickness of 1.5 × 10 ⁻⁸ m or more,
A method for driving a semiconductor laser device, wherein the semiconductor laser device is driven by a pulse voltage having a value that is twice or more of a threshold voltage value.   The method of driving a semiconductor laser device according to claim 17, wherein the second electrode is separated into a first portion and a second portion by a separation groove. The second electrode is separated into a first part and a second part by a separation groove,
The laminated structure is made of an AlGaInN-based compound semiconductor,
The second compound semiconductor layer has at least a laminated structure of an electron barrier layer and a clad layer from the active layer side,
The cladding layer has a superlattice structure in which p-type GaN layers and p-type AlGaN layers are alternately stacked,
The electron barrier layer is composed of a p-type AlGaN layer,
18. The method of driving a semiconductor laser device according to claim 17, wherein the Al composition ratio in the electron barrier layer is higher than the average Al composition ratio in the cladding layer. The active layer is composed of a carrier injection region and a carrier non-injection region, or the length of the second electrode is shorter than the length of the active layer,
The laminated structure is made of an AlGaInN-based compound semiconductor,
The second compound semiconductor layer has at least a laminated structure of an electron barrier layer and a clad layer from the active layer side,
The cladding layer has a superlattice structure in which p-type GaN layers and p-type AlGaN layers are alternately stacked,
The electron barrier layer is composed of a p-type AlGaN layer,
When the composition of the electron barrier layer is expressed as Al _x Ga _1-x N, 0.15 ≦ x ≦ 0.25,
18. The method of driving a semiconductor laser device according to claim 17, wherein the Al composition ratio in the electron barrier layer is higher than the average Al composition ratio in the cladding layer.

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