JP2013184169A - Solder alloy powder for bump, solder paste for bump, and solder bump - Google Patents
Solder alloy powder for bump, solder paste for bump, and solder bump Download PDFInfo
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Abstract
Description
本発明は、バンプ形成時にバンプ表面に生じる突起を抑制することができるバンプ用はんだ合金粉末、バンプ用はんだペースト及びはんだバンプに関するものである。 The present invention relates to a solder alloy powder for bumps, a solder paste for bumps, and solder bumps that can suppress protrusions generated on the bump surface during bump formation.
半導体の高密度実装技術としてはんだバンプによる接合技術が一般に用いられている。このはんだバンプに用いるはんだ合金粉末としては、例えば特許文献１に記載のＰｂ−Ｓｎはんだ合金粉末などが知られている。また、近年の環境上の配慮等に対応して鉛フリーのはんだ合金の開発が進んでおり、この鉛フリーのはんだ合金としては、ＳｎＡｇ系やＳｎＡｇＣｕ系の合金はんだが知られている。 As a high-density mounting technique for semiconductors, a joining technique using solder bumps is generally used. As a solder alloy powder used for this solder bump, for example, a Pb—Sn solder alloy powder described in Patent Document 1 is known. Also, lead-free solder alloys have been developed in response to environmental considerations in recent years, and SnAg-based and SnAgCu-based alloy solders are known as the lead-free solder alloys.
例えば、従来、特許文献２には、ＳｎＡｇＣｕ系の鉛フリーはんだが提案されている。この鉛フリーはんだは、Ａｇを３．０〜５．０重量％，Ｃｕを０．５〜３．０重量％、及び残部Ｓｎから成る組成を有するはんだ合金である。 For example, Patent Document 2 has conventionally proposed a SnAgCu-based lead-free solder. This lead-free solder is a solder alloy having a composition composed of 3.0 to 5.0% by weight of Ag, 0.5 to 3.0% by weight of Cu, and the balance Sn.
上記従来の技術には、以下の課題が残されている。
すなわち、鉛フリーはんだとして代表的なＳｎＡｇＣｕ系はんだ合金粉末を用いてペースト化後、印刷・リフロー処理を行い、はんだバンプを形成すると、はんだバンプにニードル状の突起が発生してバンプ形状不良となる場合があった。このニードル状の突起は、隣接する他のはんだバンプに接触してショートを引き起こすおそれがあり、特に、近年のファインピッチのはんだバンプでは、隣接するバンプ同士が近接しており、ニードル状の突起の発生が大きな問題となる。また、ニードル状の突起が生じるとバンプ高さの均一性が悪くなり、フリップチップ接合時のアッセンブリの際に接合ができなくなる不都合もあった。
The following problems remain in the conventional technology.
That is, when a solder bump is formed after a paste is formed using SnAgCu solder alloy powder, which is a typical lead-free solder, and a solder bump is formed, a needle-like protrusion is generated on the solder bump, resulting in a defective bump shape. There was a case. This needle-shaped protrusion may cause a short circuit by coming into contact with other adjacent solder bumps. Particularly, in recent fine-pitch solder bumps, adjacent bumps are close to each other. Occurrence becomes a big problem. Further, when the needle-like protrusion is generated, the uniformity of the bump height is deteriorated, and there is a disadvantage that the bonding cannot be performed at the time of the assembly at the time of flip chip bonding.
本発明は、前述の課題に鑑みてなされたもので、ニードル状の突起の発生を抑制可能なバンプ用はんだ合金粉末、バンプ用はんだペースト及びはんだバンプを提供することを目的とする。 The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a solder alloy powder for bumps, a solder paste for bumps, and a solder bump that can suppress the occurrence of needle-like protrusions.
本発明者らは、ＳｎＡｇＣｕ系のはんだ合金材料について鋭意検討の結果、含有される特定の不純物元素がニードル状の突起の発生要因となっていることを突き止めた。 As a result of intensive studies on SnAgCu-based solder alloy materials, the present inventors have found that the specific impurity element contained is a cause of needle-like protrusions.
したがって、本発明は、上記知見から得られたものであり、前記課題を解決するために以下の構成を採用した。すなわち、第１の発明に係るバンプ用はんだ合金材料は、Ａｇ：２．８〜４．２重量％、Ｃｕ：０．４〜０．６重量％を含有し、残部がＳｎ及び不可避不純物からなる成分組成を有し、前記不可避不純物のうちＦｅが８ｐｐｍ以下、Ｎｉが５ｐｐｍ以下、Ａｓが２０ｐｐｍ以下であることを特徴とする。 Therefore, the present invention has been obtained from the above findings, and the following configuration has been adopted in order to solve the above problems. That is, the solder alloy material for bumps according to the first invention contains Ag: 2.8 to 4.2% by weight, Cu: 0.4 to 0.6% by weight, with the balance being Sn and inevitable impurities. It has a component composition, Fe is 8 ppm or less, Ni is 5 ppm or less, and As is 20 ppm or less among the inevitable impurities.
すなわち、このバンプ用はんだ合金粉末では、不可避不純物のうちＦｅが８ｐｐｍ以下、Ｎｉが５ｐｐｍ以下、Ａｓが２０ｐｐｍ以下であるので、ニードル状の突起発生の核となる金属間化合物を造りやすいＦｅ，Ｎｉ，Ａｓを上記含有量以内に制限することで、リフロー処理等ではんだバンプを形成した際にニードル状の突起の発生を抑制し、良好なバンプ形状を得ることができる。 That is, in this solder alloy powder for bumps, among the inevitable impurities, Fe is 8 ppm or less, Ni is 5 ppm or less, and As is 20 ppm or less. Therefore, it is easy to produce an intermetallic compound that becomes the nucleus of needle-like protrusion generation. By restricting As to the above content, it is possible to suppress the generation of needle-like protrusions when a solder bump is formed by reflow treatment or the like, and to obtain a good bump shape.
なお、Ｆｅ，Ｎｉ及びＡｓは、上述したようにニードル状の突起の発生を助長させる元素であり、それぞれが上記含有量を超えると、ニードル状の突起の発生率が大幅に高くなる。
また、Ａｇ及びＣｕの含有量を上記範囲とした理由は、業界において、Ａｇ含有量が多い鉛フリー合金の主成分としては、Ｓｎ３Ａｇ０．５Ｃｕ，Ｓｎ４Ａｇ０．５Ｃｕ合金が一般的であるためである。
Note that Fe, Ni, and As are elements that promote the generation of needle-shaped protrusions as described above. If each of the elements exceeds the above content, the incidence of needle-shaped protrusions is significantly increased.
The reason why the contents of Ag and Cu are in the above range is that, in the industry, Sn3Ag0.5Cu and Sn4Ag0.5Cu alloys are generally used as the main component of lead-free alloys having a high Ag content.
第２の発明に係るバンプ用はんだペーストは、第１の発明のバンプ用はんだ合金粉末と、フラックスとを混合したことを特徴とする。 The bump solder paste according to the second invention is characterized by mixing the bump solder alloy powder of the first invention and a flux.
第３の発明に係るはんだバンプは、上記第１の発明のバンプ用はんだ合金粉末を用いて形成されたことを特徴とする。
すなわち、このはんだバンプでは、上記第１の発明のバンプ用はんだ合金粉末を用いて形成されているので、ニードル状の突起が生じず、良好なバンプ形状を有しており、ファインピッチのフリップチップであっても良好な接合が可能である。
なお、従来、ニードル状の突起は約２５μｍ程度のものが発生しうるが、１５０μｍ以下のファインピッチでは、バンプ端部の間の距離が約５０μｍとなり、２５μｍの突起によってショートが発生する。このため、特に１５０μｍ以下のファインピッチ用途において、ニードル状の突起の発生を抑えた本発明の利用価値は極めて高いものである。
A solder bump according to a third invention is formed using the solder alloy powder for bumps of the first invention.
That is, since this solder bump is formed using the solder alloy powder for bumps of the first aspect of the invention, it does not produce needle-like protrusions, has a good bump shape, and has a fine pitch flip chip. Even so, good bonding is possible.
Conventionally, needle-like protrusions of about 25 μm can be generated. However, at a fine pitch of 150 μm or less, the distance between the bump ends is about 50 μm, and a short circuit is caused by the 25 μm protrusion. For this reason, the utility value of this invention which suppressed generation | occurrence | production of the needle-like protrusion especially in the fine pitch use below 150 micrometers is very high.
本発明によれば、以下の効果を奏する。
すなわち、本発明に係るバンプ用はんだ合金粉末、バンプ用はんだペースト及びはんだバンプによれば、不可避不純物のうちＦｅが８ｐｐｍ以下、Ｎｉが５ｐｐｍ以下、Ａｓが２０ｐｐｍ以下であるので、ニードル状の突起の発生を抑制し、良好なバンプ形状を得ることができる。したがって、本発明によれば、ファインピッチの高密度フリップチップであっても良好な接合ができ、信頼性の高い高密度実装が可能になる。
The present invention has the following effects.
That is, according to the solder alloy powder for bumps, the solder paste for bumps and the solder bumps according to the present invention, among the inevitable impurities, Fe is 8 ppm or less, Ni is 5 ppm or less, and As is 20 ppm or less. Generation | occurrence | production can be suppressed and a favorable bump shape can be obtained. Therefore, according to the present invention, even a fine pitch high density flip chip can be satisfactorily bonded, and high density mounting with high reliability becomes possible.
以下、本発明に係るバンプ用はんだ合金粉末、バンプ用はんだペースト及びはんだバンプの一実施形態について、図１及び図２を参照して説明する。 Hereinafter, an embodiment of a solder alloy powder for bumps, a solder paste for bumps and a solder bump according to the present invention will be described with reference to FIGS. 1 and 2.
本実施形態におけるバンプ用はんだ合金粉末は、Ａｇ：２．８〜４．２重量％、Ｃｕ：０．４〜０．６重量％を含有し、残部がＳｎ及び不可避不純物からなる成分組成を有し、上記不可避不純物のうちＦｅが８ｐｐｍ以下、Ｎｉが５ｐｐｍ以下、Ａｓが２０ｐｐｍ以下である。このバンプ用はんだ合金粉末の粒径は、例えば５〜１５μｍであり、平均粒径は、１０．０〜１１．０μｍである。なお、この粒径は、レーザー回折・散乱式粒度分析計（Ｎｉｋｋｉｓｏ社製ＭＴ３３００）により測定している。また、上記不純物含有量の分析は、高周波誘導結合プラズマ発光分析装置（日本ジャーレル・アッシュ社製ＩＣＡＰ−５７７）を用いて行っている。 The solder alloy powder for bumps in this embodiment contains Ag: 2.8 to 4.2% by weight, Cu: 0.4 to 0.6% by weight, and the balance is composed of Sn and inevitable impurities. Of the inevitable impurities, Fe is 8 ppm or less, Ni is 5 ppm or less, and As is 20 ppm or less. The solder alloy powder for bumps has a particle size of, for example, 5 to 15 μm, and an average particle size of 10.0 to 11.0 μm. The particle size is measured by a laser diffraction / scattering particle size analyzer (MT3300 manufactured by Nikiso). The impurity content is analyzed using a high-frequency inductively coupled plasma emission spectrometer (ICAP-577 manufactured by Nippon Jarrell-Ash).
このバンプ用はんだ合金粉末の作製方法は、まず、所定含有量になるように秤量したＳｎ，Ａｇ，Ｃｕの各原料をルツボ内で溶解させて合金の溶湯とし、さらにこの合金を、ガスアトマイズ法などの手法を用いて造粒することにより、例えばＳｎ−３重量％Ａｇ−０．５重量％Ｃｕのはんだ合金粉末（固相線温度：２１７℃、液相線温度：２１７℃）とする。
なお、不可避不純物のうちＦｅを８ｐｐｍ以下、Ｎｉを５ｐｐｍ以下、Ａｓを２０ｐｐｍ以下とするため、上記製法中において、Ｓｎ，Ａｇ，Ｃｕ原料（特にＳｎ）の不純物を管理し、不純物量の低いものを選定している。
The solder alloy powder for bumps is prepared by first melting Sn, Ag, and Cu raw materials weighed so as to have a predetermined content in a crucible to form a molten alloy, and further using this alloy as a gas atomizing method or the like. For example, a Sn-3 wt% Ag-0.5 wt% Cu solder alloy powder (solidus temperature: 217 ° C., liquidus temperature: 217 ° C.) is obtained.
Of the inevitable impurities, Fe is 8 ppm or less, Ni is 5 ppm or less, and As is 20 ppm or less, so that impurities of Sn, Ag, Cu raw material (especially Sn) are controlled and the amount of impurities is low in the above manufacturing method. Is selected.
また、このバンプ用はんだ合金粉末を用いてはんだバンプを作製するには、まず上記バンプ用はんだ合金粉末とフラックスとを、例えばフラックス比率：１１質量％で混合してバンプ用はんだペーストとする。このはんだペーストの粘度は、約１５０Ｐａ・ｓである。次に、図１に示すように、例えばバンプ形成用孔Ｈを設けたドライフィルムＦをＳｉウエハＷに貼り付け、該ＳｉウエハＷ上のバンプ形成用孔Ｈ内に配したアンダーバンプメタルＵＢＭ上に上記はんだペーストＰを印刷する。さらに、このはんだペーストＰに対して２回のリフロー処理（１ｓｔリフロー及び２ｎｄリフロー）を行ってはんだバンプＢを作製する。 In order to produce a solder bump using the bump solder alloy powder, first, the bump solder alloy powder and the flux are mixed, for example, at a flux ratio of 11% by mass to obtain a bump solder paste. The solder paste has a viscosity of about 150 Pa · s. Next, as shown in FIG. 1, for example, a dry film F provided with a bump forming hole H is attached to a Si wafer W, and the under bump metal UBM arranged in the bump forming hole H on the Si wafer W The solder paste P is printed on. Further, the solder paste B is manufactured by performing reflow processing (1st reflow and 2nd reflow) twice on the solder paste P.
上記フラックスは、一般的なフラックスを用いることができ、このフラックスには、通常、ロジン、活性剤、溶剤および増粘剤等が含まれる。また、フラックスとしては、ペーストの濡れ性の観点からＲＡやＲＭＡフラックス等が好ましい。
なお、１ｓｔリフローの後に、バンプ形状を整えるため、ドライフィルムＦを除去後、ＲＭＡポストフラックスを塗布し、再度２ｎｄリフローを行ってはんだバンプＢを得ている。
また、上記アンダーバンプメタルＵＢＭは、Ｃｕ又はＣｕにＯＳＰ（有機膜処理）を施したもの、Ａｕ／Ｎｉメッキ処理やＳｎメッキ処理を施したものである。
As the flux, a general flux can be used, and this flux usually includes rosin, an activator, a solvent, a thickener, and the like. Moreover, as a flux, RA, RMA flux, etc. are preferable from a wettability viewpoint of a paste.
In addition, in order to arrange bump shape after 1st reflow, after removing the dry film F, RMA post flux is applied, 2nd reflow is performed again, and the solder bump B is obtained.
The under bump metal UBM is obtained by subjecting Cu or Cu to OSP (organic film treatment), Au / Ni plating treatment, or Sn plating treatment.
上記２回のリフロー処理（１ｓｔリフロー及び２ｎｄリフロー）は、例えば図２に示すプロファイルにより行う。また、リフロー処理は、ベルト炉を使用し、窒素雰囲気中で行う。
このように作製したはんだバンプは、例えば直径約１００μｍ、約高さ７０μｍである。また、バンプピッチは、例えば１５０μｍである。
The above-described two reflow processes (1st reflow and 2nd reflow) are performed using, for example, the profile shown in FIG. The reflow process is performed in a nitrogen atmosphere using a belt furnace.
The solder bump thus produced has a diameter of about 100 μm and a height of 70 μm, for example. The bump pitch is, for example, 150 μm.
このように本実施形態のバンプ用はんだ合金粉末では、不可避不純物のうちＦｅが８ｐｐｍ以下、Ｎｉが５ｐｐｍ以下、Ａｓが２０ｐｐｍ以下であるので、ニードル状の突起発生の核となる金属間化合物を造りやすいＦｅ，Ｎｉ，Ａｓを上記含有量以内に制限することで、リフロー処理ではんだバンプを形成した際にニードル状の突起の発生を抑制し、良好なバンプ形状を得ることができる。 Thus, in the solder alloy powder for bumps of this embodiment, among the inevitable impurities, Fe is 8 ppm or less, Ni is 5 ppm or less, and As is 20 ppm or less. Therefore, an intermetallic compound serving as a nucleus for generating needle-like protrusions is formed. By restricting easy Fe, Ni, and As to the above contents, the formation of needle-like protrusions can be suppressed when a solder bump is formed by reflow treatment, and a good bump shape can be obtained.
また、本実施形態のはんだバンプでは、このバンプ用はんだ合金粉末を用いて形成されているので、ニードル状の突起が生じず、良好なバンプ形状を有しており、ファインピッチのフリップチップであっても良好な接合が可能である。 In addition, since the solder bumps of this embodiment are formed using the solder alloy powder for bumps, needle-like protrusions are not generated, the bumps have a good shape, and are fine pitch flip chips. However, good bonding is possible.
次に、上記実施形態におけるバンプ用はんだ合金粉末、バンプ用はんだペースト及びはんだバンプに基づいて、はんだバンプを作製した実施例について、ニードル状の突起発生の有無に関して評価した結果を説明する。 Next, a description will be given of the results of evaluating the presence or absence of the occurrence of needle-like protrusions in Examples in which solder bumps were produced based on the solder alloy powder for bumps, the solder paste for bumps, and the solder bumps in the above embodiment.
まず、本発明の実施例として、表１に示す成分組成及び不可避不純物のはんだ合金粉末を作製し、ＲＡフラックスを表１に示すフラックス比率で混ぜてはんだペーストとした。すなわち、本発明の実施例１〜９は、すべて不可避不純物のうちＦｅが８ｐｐｍ以下、Ｎｉが５ｐｐｍ以下、Ａｓが２０ｐｐｍ以下である。本実施例の各はんだペーストを用いて、上述したリフロー処理によってはんだバンプを形成した。そして、作製したはんだバンプを、ＳＥＭ及び光学顕微鏡で観察することで、ニードル状の突起について発生の有無を調べ、その発生率（以下、ニードル発生率と称す）を算出した。 First, as examples of the present invention, solder alloy powders having the component compositions and inevitable impurities shown in Table 1 were prepared, and RA flux was mixed at a flux ratio shown in Table 1 to obtain a solder paste. That is, Examples 1 to 9 of the present invention are all inevitable impurities of which Fe is 8 ppm or less, Ni is 5 ppm or less, and As is 20 ppm or less. Using each solder paste of the present example, solder bumps were formed by the above-described reflow process. Then, the produced solder bumps were observed with an SEM and an optical microscope to examine whether or not the needle-like protrusions were generated, and the generation rate (hereinafter referred to as needle generation rate) was calculated.
なお、比較例として、本発明の範囲から外れる不可避不純物の含有量としたものを複数作製し、はんだバンプを作製して、同様にニードル発生率を求めた。これらの結果も併せて表１に示す。なお、比較例１〜３は、Ｆｅが本発明の範囲よりも多く含有され、比較例４〜６は、Ｎｉが本発明の範囲よりも多く含有されている。また、比較例７，８は、Ａｓが本発明の範囲よりも多く含有されている。
なお、各実施例及び比較例において、測定したバンプ数はそれぞれ７５６個とした。
As a comparative example, a plurality of inevitable impurity contents outside the scope of the present invention were produced, solder bumps were produced, and the needle generation rate was similarly determined. These results are also shown in Table 1. Comparative Examples 1 to 3 contain more Fe than the range of the present invention, and Comparative Examples 4 to 6 contain more Ni than the range of the present invention. Moreover, as for Comparative Examples 7 and 8, As is contained more than the range of this invention.
In each example and comparative example, the number of bumps measured was 756.
この結果からわかるように、上記比較例は、いずれもニードル発生率が１％を超えているのに対し、本発明の実施例は、いずれもニードル発生率が１％未満であり、ニードル状の突起の発生が抑制されて良好なバンプ形状が得られている。
なお、本実施例のバンプ用はんだ合金粉末をペースト化して、印刷・リフローで形成したバンプで、良好なバンプ形状の例について、ＳＥＭ写真を図３に示す。また、比較例について、ニードル状の突起が発生している例について、ＳＥＭ写真を図４に示す。
As can be seen from the results, in all of the comparative examples, the needle generation rate exceeds 1%, whereas in the examples of the present invention, the needle generation rate is less than 1%, The generation of protrusions is suppressed and a good bump shape is obtained.
In addition, the SEM photograph is shown in FIG. 3 about the example of a favorable bump shape by making the solder alloy powder for bumps of this example into a paste and forming it by printing / reflow. Moreover, about the example in which the needle-like protrusion has generate | occur | produced about the comparative example, a SEM photograph is shown in FIG.
なお、本発明の技術範囲は上記実施形態及び上記実施例に限定されるものではなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。 The technical scope of the present invention is not limited to the above-described embodiments and examples, and various modifications can be made without departing from the spirit of the present invention.
Ｂ…はんだバンプ、Ｆ…ドライフィルム、Ｐ…はんだペースト、ＵＢＭ…アンダーバンプメタル、Ｗ…Ｓｉウエハ B ... Solder bump, F ... Dry film, P ... Solder paste, UBM ... Under bump metal, W ... Si wafer
Claims (3)
前記不可避不純物のうちＦｅが８ｐｐｍ以下、Ｎｉが５ｐｐｍ以下、Ａｓが２０ｐｐｍ以下であることを特徴とするバンプ用はんだ合金粉末。 Ag: 2.8 to 4.2% by weight, Cu: 0.4 to 0.6% by weight, with the balance being composed of Sn and inevitable impurities,
The solder alloy powder for bumps, wherein among the inevitable impurities, Fe is 8 ppm or less, Ni is 5 ppm or less, and As is 20 ppm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012048893A JP5966449B2 (en) | 2012-03-06 | 2012-03-06 | Solder alloy powder for bumps, solder paste for bumps and solder bumps |
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| JP5966449B2 JP5966449B2 (en) | 2016-08-10 |
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| JP2015098052A (en) * | 2013-10-16 | 2015-05-28 | 三井金属鉱業株式会社 | Solder alloy and solder powder |
| US20220088722A1 (en) * | 2019-05-27 | 2022-03-24 | Senju Metal Industry Co., Ltd. | Solder alloy, solder power, and solder joint |
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| JP2019076958A (en) * | 2013-10-16 | 2019-05-23 | 三井金属鉱業株式会社 | Solder alloy and solder powder |
| JP2021062410A (en) * | 2013-10-16 | 2021-04-22 | 三井金属鉱業株式会社 | Solder alloy and solder powder |
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| JP7183313B2 (en) | 2013-10-16 | 2022-12-05 | 三井金属鉱業株式会社 | Solder alloy and solder powder |
| JP7183314B2 (en) | 2013-10-16 | 2022-12-05 | 三井金属鉱業株式会社 | Solder alloy and solder powder |
| US20220088722A1 (en) * | 2019-05-27 | 2022-03-24 | Senju Metal Industry Co., Ltd. | Solder alloy, solder power, and solder joint |
| US11583959B2 (en) * | 2019-05-27 | 2023-02-21 | Senju Metal Industry Co., Ltd. | Solder alloy, solder power, and solder joint |
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| JP5966449B2 (en) | 2016-08-10 |
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