JP2013157410A - Semiconductor element manufacturing method and semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable easy manufacturing of a compact semiconductor element having high heat radiation property, and provide a compact semiconductor element having high heat radiation property.SOLUTION: A semiconductor element manufacturing method comprises: bonding a plurality of IC chips 8 to predetermined positions of a single high heat dissipation material 10; and subsequently mounting 1-chip substrate 13 for rewiring on the IC chips 8. That is, by connecting the substrates 13 for rewiring to stand bumps 9 provided on a logic circuit surface of the IC chips 8 via ACF (Anisotropic Conductive Film) 16 disposed on each of the substrates 13 for rewiring, chip-on-chip mounting is performed. The method further comprises: subsequently, performing resin encapsulation by resin 18 on all of the IC chips 8 on which the substrate 13 for rewiring are mounted, respectively; and performing singulation by a dicing saw and the like to manufacture individual semiconductor elements.

Description

  The present invention relates to a method for manufacturing a semiconductor element and a semiconductor element, and more particularly to a semiconductor element such as a mold array package or a small package having high heat dissipation.

  In recent years, a semiconductor element such as a CSP (Chip Size Package) corresponding to the demand for miniaturization and thinning has been manufactured. For example, a mold array package is used for the purpose of improving productivity and reducing cost. Manufacture by the (MAP: Mold Array Package) method is performed. In this mold array package construction method, a large number of semiconductor circuits are assembled and arranged in an array on one substrate (MAP substrate), and the semiconductor circuits formed on the MAP substrate are separated into individual pieces by dicing. The semiconductor device is manufactured.

  In the method of manufacturing a semiconductor element (package) adopting the mold array package form as described above, an IC chip is mounted on an organic substrate or a lead frame with an adhesive for a semiconductor element, and rewiring is performed using a wire bonding technique or the like. It is. Then, the rewiring material and the IC chip are sealed with a resin, and after ensuring the environment resistance, the packaging of the semiconductor element can be completed by dividing into pieces using a dicing saw or the like. It is common.

  FIG. 4 shows a rewiring process by a conventional IC chip MAP method or the like. In this rewiring, wiring and electrodes for a plurality of semiconductor elements are formed as shown in FIG. After the IC chip 2 is wire-bonded to the rewiring collective substrate (lead frame or the like) 1 with a wire (gold wire or the like) 3, the whole is molded with a sealing resin 4. Then, a plurality of semiconductor elements shown in FIG. 4B are manufactured by dividing the assembled substrate 1 after molding into individual pieces.

JP 2004-179507 A

  By the way, in various semiconductor elements (packages) to which rewiring is performed, there are those that require high heat dissipation characteristics. However, in the MAP method for efficiently manufacturing a plurality of semiconductor elements, high heat dissipation characteristics are easily achieved. It was difficult to get.

  That is, when high heat dissipation characteristics are imparted to the semiconductor element shown in FIG. 4B, before the resin chip 4 is sealed, application of a high heat dissipation paint having high heat dissipation characteristics to the IC chip 2 is possible. Although it is necessary to attach a heat sink, etc., it is difficult to carry out these steps at this stage. As shown in FIG. 5 (A), a high heat dissipating paint 5 is applied on the sealing resin 4. Alternatively, as shown in FIG. 5B, the heat radiating plate 6 is disposed on the sealing resin 4.

  However, with the provision of the high heat dissipation characteristics shown in FIGS. 5A and 5B, it is difficult to achieve high heat dissipation because it is not possible to dispose a high heat dissipating paint or heat dissipating plate near the IC chip 2. In the case of FIG. 5B, since the semiconductor element manufactured by the MAP method is extremely small, it is difficult to mount the heat sink 6 on each semiconductor element.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for manufacturing a semiconductor element capable of easily manufacturing a small semiconductor element having high heat dissipation characteristics and a small semiconductor having high heat dissipation characteristics. It is to provide an element.

In order to achieve the above object, a method of manufacturing a semiconductor device (package) according to the invention of claim 1 includes a step of bonding a plurality of IC chips to a predetermined position of a high heat dissipation base material, and wiring for rewiring. And a step of mounting the separated redistribution substrate on which the electrodes are formed, on the IC chip, a step of resin-sealing a plurality of IC chips on which the redistribution substrate is mounted, and individual semiconductors And a step of dividing the device into pieces.
According to a second aspect of the present invention, there is provided a semiconductor device comprising: an IC chip on which bump electrodes are formed; and a rewiring substrate on which wirings and electrodes for rewiring are formed and separated into pieces. A high heat dissipation material is bonded to the surface opposite to the bump electrode, and the separated rewiring substrate is connected to the bump electrode of the IC chip through an anisotropic conductive film. Features.

  According to the configuration of the first aspect, after the plurality of IC chips are bonded to a predetermined position of one high heat dissipation material, the rewiring substrate separated into one piece (one chip) is mounted on the IC chip. It is mounted using connection technology such as flip chip bonding technology. For example, a rewiring board is mounted on a stand bump electrode provided on a logic circuit surface of an IC chip via an anisotropic conductive film provided on the rewiring board in a chip-on-chip (a technique similar to a chip-on-chip). This is done by connecting. Thereafter, resin sealing is performed on all the IC chips on which the rewiring substrate is mounted, and individual semiconductor elements are manufactured by being separated into pieces by a dicing saw or the like.

  According to the method for manufacturing a semiconductor device of the present invention, in a semiconductor device that requires high heat dissipation characteristics, it is possible to reliably dispose a material for high heat dissipation on the IC chip, and easily provide high heat dissipation characteristics. Can be obtained. That is, since the rewiring substrate conventionally used for mounting the IC chip plays a role of a rewiring material for electrical connection, it is not easy to apply a high heat dissipation paint. For example, since the rewiring substrate is mounted by chip-on-chip, the rewiring board that has been singulated (single chip) is applied, so that a high heat dissipating paint or the like is applied to obtain higher heat dissipation characteristics. There is an advantage that a heat dissipating material can be used.

  In addition, the semiconductor element manufacturing method of the present invention has an effect that a semiconductor element having high flatness can be obtained without causing warpage during manufacturing. That is, it is possible to arrange a rewiring board as a collective board instead of a separate rewiring board with respect to the IC chip. In this case, the rewiring collective board and the high heat dissipation board are arranged. Warpage is likely to occur due to the difference in thermal expansion coefficient of the substrate. This is because it is difficult in terms of cost to manage the inside of the factory at a constant temperature, and because of the horizontal division of labor, there is a case where a semi-finished product joined with a high heat dissipation base material and a rewiring aggregate board may be moved. It is. However, according to the present invention, since the separated rewiring substrate is mounted on a chip-on-chip basis, there is no warp of the high heat dissipation base material and the influence of this warp can be eliminated. Furthermore, there is an advantage that it can be carried out in an existing production facility.

  According to the semiconductor element of the present invention, there is an effect that a small semiconductor element having high heat dissipation characteristics can be obtained.

It is sectional drawing which shows the structure of the semiconductor element manufactured with the manufacturing method of the semiconductor element which concerns on the Example of this invention. It is a figure for demonstrating each process of the manufacturing method of the semiconductor element of an Example. It is a figure which shows the assembly board | substrate with which the board | substrate for rewiring on the wafer ring for conveyance of an Example was mounted. It is a figure which shows the rewiring process by the MAP construction method etc. of the conventional IC chip. The example of the heat dissipation countermeasure considered in the conventional semiconductor element is shown, A figure (A) is a figure in the case of apply | coating a high heat dissipation paint, A figure (B) is a figure in the case of arrange | positioning a heat sink.

  FIG. 1 shows a configuration of a semiconductor element (semiconductor package) obtained by a method of manufacturing a semiconductor element according to an embodiment of the present invention. In FIG. 1, 8 is an IC chip, 10 is a high heat dissipation material. , 11 is an adhesive for a semiconductor connecting the IC chip 8 and the high heat dissipation material 10, 13 is a rewiring substrate (15 is an organic substrate), and 9 is a stud used for rewiring the IC chip 8 and the rewiring substrate 13. Bumps (bump connection electrodes), 16 is an anisotropic conductive film (ACF) used for rewiring between the IC chip 8 and the rewiring substrate 13, and 18 is a sealing resin.

  FIG. 2 shows a semiconductor manufacturing method according to the embodiment. As shown in FIG. 2A, the IC chip 8 has stud bumps 9 as bump connection electrodes formed on the logic circuit surface thereof. In addition, a single high heat dissipation material (sheet) 10 in which a coating material 10b having a high thermal conductivity (for example, a coating material containing aluminum nitride) 10b is applied to the metal thin plate 10a is provided. The size is such that the IC chip 8 can be mounted. As the high heat dissipation material 10, various materials such as a glass cloth or a polyimide base coated with a high thermal conductivity paint and made flexible can be used. First, in the step of FIG. 2A, the IC chip 8 (the surface on which the stud bump 9 is not provided) is die-bonded at a predetermined position on the high heat dissipation material 10 using the semiconductor adhesive 11. . Then, after die bonding is completed for all of the IC chips 8, the adhesive 11 is cured.

  Next, as shown in FIG. 2B, the separated rewiring substrate 13 is connected to the IC chip 8 by chip-on-chip by flip-chip bonding or the like. In this rewiring substrate 13, wirings 14 a and electrodes 14 b for rewiring processing are formed on the organic substrate 15, and an anisotropic conductive film (ACF) 16 is temporarily provided on the electrode 14 b side of the rewiring substrate 13. Glued and made in advance. That is, as shown in FIG. 3, the transfer wafer ring 20 includes a collective substrate 22 in which a plurality of the rewiring substrates 13 are formed on the UV tape 21 on the transfer wafer ring 20 with the secondary mounting surface facing upward. It is mounted (with the supporting tape of the ACF 16), and the collective substrate 22 is cut by a dicing technique, whereby the rewiring substrate 13 made into one chip is manufactured.

  2B, the surface on the ACF 16 side of the rewiring substrate 13 is applied to the surface on the stud bump 9 side of the IC chip 8 to apply pressure, heat, and bond (die bonding technology). Thus, the rewiring substrate 13 is mounted on the IC chip 8 on a chip-by-chip basis (chip-on-chip). At this time, the material of the UV tape 21 is selected and the dicing conditions are set so that the support tape of the ACF 16 is peeled off by the adhesive force of the UV tape 21 shown in FIG.

  Next, when the mounting of the rewiring substrate 13 on all of the IC chips 8 is completed, as shown in FIG. 2C, a sealing resin (MAP) is formed on the collective substrate (MAP substrate) by a molding apparatus. Resin sealing using an epoxy resin or the like) 18 is performed. When this resin sealing is completed, the assembly substrate is mounted again on the UV tape 21 affixed on the wafer ring 20 with the secondary mounting surface facing upward, and the final product form (semiconductor element) is obtained by dicing technology. Individualization is performed so that A semiconductor element separated into a final product form is subjected to an electrical characteristic test and then housed in a shipping packaging material to be a finished product.

  According to such an embodiment, it is possible to manufacture a small semiconductor device having high heat dissipation characteristics using a conventional semiconductor manufacturing line. In the step of FIG. 2B, it is also possible to arrange a rewiring collective substrate with respect to the IC substrate 8. In this case, the thermal expansion coefficient of the rewiring collective substrate and the high heat dissipation base material 10 Although warpage occurs due to the difference, in the present invention, since the rewiring substrate 13 separated into the IC chip 8 is joined, warpage occurs in the product due to the difference in thermal expansion coefficient of each member (10, 13). There is nothing. Even if the resin (18) is sealed by potting a liquid resin in which no filler is mixed, permanent deformation does not occur in the high heat dissipation base material 10 and the like, and a semiconductor element (package) with high flatness is obtained. There is an advantage that it can be obtained.

  Further, the rewiring substrate 13 including the ACF 16 can be mounted on the IC chip 8 while correcting the position each time, and rewiring can be performed. Compared with the method of performing rewiring, it is advantageous for manufacturing a smaller semiconductor device. Note that the rewiring substrate 13 can have a circular shape similar to that of the wafer, and the manufacturing cost of the semiconductor element can be reduced.

  Further, in the semiconductor element of the example, the high heat dissipation material 10 is bonded to the surface of the IC chip 8 opposite to the stud bump 9 with an adhesive, and the bump electrode of the IC chip 8 is separated into pieces. Further, the rewiring substrate 13 is connected via the anisotropic conductive film 16, and there is an advantage that a small semiconductor element having high heat dissipation characteristics can be obtained.

2, 8 ... IC chip, 4, 18 ... Resin for sealing,
9 ... Stud bump, 10 ... High heat dissipation material,
10a ... thin metal plate, 10b ... paint,
11 ... Adhesive for semiconductor, 13 ... Substrate for rewiring,
14a ... wiring, 14b ... electrode,
15 ... Organic substrate, 16 ... ACF (anisotropic conductive film).

Claims (2)

Bonding a plurality of IC chips to a predetermined position of the high heat dissipation substrate;
A step of mounting a wiring board and electrodes for rewiring and mounting the separated rewiring substrate on an IC chip;
A step of resin-sealing a plurality of IC chips mounted with the rewiring substrate;
A method of manufacturing a semiconductor element, comprising the step of dividing into individual semiconductor elements. An IC chip on which bump electrodes are formed;
Provided are wiring and electrodes for rewiring, and a rewiring substrate separated into pieces,
A high heat dissipation material is bonded to the surface opposite to the bump electrode of the IC chip, and the separated rewiring substrate is connected to the bump electrode of the IC chip through an anisotropic conductive film. A semiconductor element.

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