JP2013149694A5 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- JP2013149694A5 JP2013149694A5 JP2012007608A JP2012007608A JP2013149694A5 JP 2013149694 A5 JP2013149694 A5 JP 2013149694A5 JP 2012007608 A JP2012007608 A JP 2012007608A JP 2012007608 A JP2012007608 A JP 2012007608A JP 2013149694 A5 JP2013149694 A5 JP 2013149694A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- insulating film
- control gate
- semiconductor
- semiconductor region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 8
- 229910052757 nitrogen Inorganic materials 0.000 claims 4
- 239000011701 zinc Substances 0.000 claims 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 3
- 229910052738 indium Inorganic materials 0.000 claims 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 3
- 229910052725 zinc Inorganic materials 0.000 claims 3
- 230000001747 exhibiting Effects 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 2
Claims (6)
前記半導体領域上の、第１の絶縁膜と、A first insulating film on the semiconductor region;
前記第１の絶縁膜上の、電荷蓄積層と、A charge storage layer on the first insulating film;
前記電荷蓄積層上の、第２の絶縁膜と、A second insulating film on the charge storage layer;
前記第２の絶縁膜上の、コントロールゲートと、を有し、A control gate on the second insulating film;
前記コントロールゲートは、インジウム又は亜鉛のいずれか一と、窒素とを有することを特徴とする半導体装置。The control gate includes any one of indium and zinc and nitrogen.
前記半導体領域上の、第１の絶縁膜と、A first insulating film on the semiconductor region;
前記第１の絶縁膜上の、電荷蓄積層と、A charge storage layer on the first insulating film;
前記電荷蓄積層上の、第２の絶縁膜と、A second insulating film on the charge storage layer;
前記第２の絶縁膜上の、コントロールゲートと、を有し、A control gate on the second insulating film;
前記コントロールゲートは、第１の導電層と、前記第１の導電層上の第２の導電層と、を有し、The control gate includes a first conductive layer and a second conductive layer on the first conductive layer;
前記第１の導電層は、インジウム又は亜鉛のいずれか一と、窒素とを有することを特徴とする半導体装置。The semiconductor device, wherein the first conductive layer includes any one of indium and zinc and nitrogen.
前記半導体領域は、ソース領域と、ドレイン領域とを有し、
前記ソース領域の周囲に、第１の領域を有し、
前記ドレイン領域の周囲に、第２の領域を有し、
前記半導体領域は、ｐ型を示し、
前記第１の領域は、前記半導体領域よりも、ｐ型を示す不純物の濃度が高く、
前記第２の領域は、前記半導体領域よりも、ｐ型を示す不純物の濃度が高く、
前記ソース領域は、前記コントロールゲートと重ならない領域を有し、
前記ドレイン領域は、前記コントロールゲートと重ならない領域を有し、
前記第１の領域は、前記コントロールゲートと重なる領域を有し、
前記第２の領域は、前記コントロールゲートと重なる領域を有することを特徴とする半導体装置。 In claim 1 or claim 2,
The semiconductor region has a source region and a drain region,
A first region around the source region;
A second region around the drain region;
The semiconductor region is p-type;
The first region has a higher concentration of impurities exhibiting p-type than the semiconductor region,
The second region has a higher concentration of impurities exhibiting p-type than the semiconductor region,
The source region has a region that does not overlap the control gate;
The drain region has a region that does not overlap the control gate;
The first region has a region overlapping the control gate;
The semiconductor device, wherein the second region has a region overlapping with the control gate.
前記第１の半導体領域上の、第２の半導体領域と、A second semiconductor region on the first semiconductor region;
前記第２の半導体領域上の、第１の絶縁膜と、A first insulating film on the second semiconductor region;
前記第１の絶縁膜上の、電荷蓄積層と、A charge storage layer on the first insulating film;
前記電荷蓄積層上の、第２の絶縁膜と、A second insulating film on the charge storage layer;
前記第２の絶縁膜上の、コントロールゲートと、を有し、A control gate on the second insulating film;
前記コントロールゲートは、インジウム又は亜鉛のいずれか一と、窒素とを有し、The control gate has any one of indium or zinc and nitrogen,
前記第２の半導体領域が示す導電型は、前記第１の半導体領域が示す導電型と異なることを特徴とする半導体装置。A semiconductor device characterized in that a conductivity type indicated by the second semiconductor region is different from a conductivity type indicated by the first semiconductor region.
前記コントロールゲートは、さらに酸素を有し、The control gate further comprises oxygen;
前記酸素は、前記窒素の２倍乃至５倍で含有されていることを特徴とする半導体装置。2. The semiconductor device according to claim 1, wherein the oxygen is contained 2 to 5 times the nitrogen.
前記コントロールゲートの組成式は、ＩｎThe composition formula of the control gate is In ａa ＧａGa ｂb ＺｎZn ｃc ＯO ｄd ＮN ｅe 、（０≦ａ≦１、０≦ｂ≦１、０≦ｃ≦１、０＜ｄ≦１、０＜ｅ≦１）と示されることを特徴とする半導体装置。(0 ≦ a ≦ 1, 0 ≦ b ≦ 1, 0 ≦ c ≦ 1, 0 <d ≦ 1, 0 <e ≦ 1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012007608A JP6088142B2 (en) | 2012-01-18 | 2012-01-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012007608A JP6088142B2 (en) | 2012-01-18 | 2012-01-18 | Semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017018197A Division JP6411556B2 (en) | 2017-02-03 | 2017-02-03 | Semiconductor memory device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013149694A JP2013149694A (en) | 2013-08-01 |
| JP2013149694A5 true JP2013149694A5 (en) | 2015-02-26 |
| JP6088142B2 JP6088142B2 (en) | 2017-03-01 |
Family
ID=49046940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012007608A Expired - Fee Related JP6088142B2 (en) | 2012-01-18 | 2012-01-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6088142B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10665604B2 (en) * | 2017-07-21 | 2020-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, memory device, and electronic device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE1007475A3 (en) * | 1993-09-06 | 1995-07-11 | Philips Electronics Nv | Semiconductor device having a non-volatile memory and method for fabricating such a semiconductor device. |
| JPH0897307A (en) * | 1994-09-29 | 1996-04-12 | Toshiba Corp | Semiconductor memory |
| JP2001267435A (en) * | 2000-03-15 | 2001-09-28 | Hitachi Ltd | Semiconductor integrated circuit device |
| JP5221065B2 (en) * | 2007-06-22 | 2013-06-26 | 株式会社東芝 | Nonvolatile semiconductor memory device |
| JP2009194311A (en) * | 2008-02-18 | 2009-08-27 | Toshiba Corp | Nonvolatile semiconductor memory device, and manufacturing method thereof |
| JP2010010349A (en) * | 2008-06-26 | 2010-01-14 | Toshiba Corp | Nonvolatile semiconductor storage device, and manufacturing method of the same |
| JP5430113B2 (en) * | 2008-10-08 | 2014-02-26 | キヤノン株式会社 | Field effect transistor and manufacturing method thereof |
-
2012
- 2012-01-18 JP JP2012007608A patent/JP6088142B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2013048216A5 (en) | ||
| JP2012023359A5 (en) | ||
| JP2011222982A5 (en) | Semiconductor device | |
| JP2013149965A5 (en) | ||
| JP2013211543A5 (en) | Semiconductor device | |
| JP2014003280A5 (en) | Semiconductor device | |
| JP2012216834A5 (en) | ||
| JP2011233880A5 (en) | Semiconductor device | |
| JP2010206190A5 (en) | Semiconductor device | |
| JP2011228691A5 (en) | ||
| JP2013179276A5 (en) | ||
| JP2013175716A5 (en) | Semiconductor device | |
| JP2011228695A5 (en) | ||
| JP2012083738A5 (en) | ||
| JP2012060160A5 (en) | ||
| JP2011222989A5 (en) | Semiconductor device | |
| JP2011233876A5 (en) | ||
| JP2013236068A5 (en) | Semiconductor device | |
| JP2011103458A5 (en) | ||
| JP2011243973A5 (en) | ||
| JP2013047808A5 (en) | Display device | |
| JP2011258941A5 (en) | ||
| JP2010212672A5 (en) | Semiconductor device | |
| JP2010258423A5 (en) | Semiconductor device | |
| JP2014179596A5 (en) |