JP2013143479A - Light-emitting device, manufacturing method of the same and projector - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device which can change a travelling direction of light emitted from a semiconductor light-emitting element and achieve a high heat dissipation performance.SOLUTION: A light-emitting device 100 according to the present invention comprises: a silicon substrate 10; a metal substrate 20 having a stem 22 provided on a first surface 12 of the silicon substrate 10, and projections 24 provided on the stem 22 to pierce the silicon substrate 10; semiconductor light-emitting elements 40 provided on a second surface 14 of the silicon substrate 10 on the opposite side to the first surface 12; and reflection films 30 provided on the projections 24, for reflecting light L emitted from the semiconductor light-emitting elements 40, respectively. The semiconductor light-emitting elements 40 overlap the metal plate 20 in plan view from a thickness direction of the silicon substrate 10. The projection 24 has an inclined plane 26 inclined against the second surface 14 and the reflection film 30 is provided on the inclined plane 26.

Description

  The present invention relates to a light emitting device, a manufacturing method thereof, and a projector.

  In order to increase the luminance of the light emitting device, for example, a structure in which a plurality of semiconductor light emitting elements are arranged in an array is adopted. Patent Document 1 discloses a light-emitting device that can change the traveling direction of light emitted from a plurality of semiconductor light-emitting elements arranged in an array by a reflective element and direct the light in the same direction. .

JP-A-8-80637

  In the light emitting device as described above, the semiconductor light emitting element generates heat, and for example, the luminance may be lowered. In particular, when a plurality of semiconductor light emitting elements are provided, the amount of heat generated by the entire light emitting device may increase.

  One of the objects according to some aspects of the present invention is to provide a light-emitting device that can change the traveling direction of light emitted from a semiconductor light-emitting element and can have high heat dissipation. Another object of some embodiments of the present invention is to provide a method for manufacturing the light-emitting device. Another object of some embodiments of the present invention is to provide a projector having the light-emitting device.

The light emitting device according to the present invention is
A silicon substrate;
A base provided on the first surface of the silicon substrate, and a metal substrate having a protrusion provided on the base and penetrating the silicon substrate;
A semiconductor light emitting device provided on a second surface opposite to the first surface of the silicon substrate;
A reflective film that is provided on the protrusion and reflects light emitted from the semiconductor light emitting element;
Including
The semiconductor light emitting element is overlapped with the metal substrate in a plan view from the thickness direction of the silicon substrate,
The protrusion has an inclined surface inclined with respect to the second surface,
The reflective film is provided on the inclined surface.

  According to such a light emitting device, the traveling direction of the light emitted from the semiconductor light emitting element can be changed by the reflective film provided on the inclined surface. Furthermore, in such a light emitting device, the semiconductor light emitting element overlaps the metal substrate in a plan view from the thickness direction of the silicon substrate. Therefore, compared with the case where the semiconductor light emitting element and the metal substrate do not overlap or the case where the metal substrate is not provided, it is possible to have higher heat dissipation.

In the light emitting device according to the present invention,
The first surface is provided with a recess,
The concave portion overlaps the semiconductor light emitting element in a plan view from the thickness direction of the silicon substrate,
A part of the metal substrate may be provided in the recess.

  According to such a light emitting device, the distance between the semiconductor light emitting element and the metal substrate can be reduced. Therefore, it can have much higher heat dissipation.

In the light emitting device according to the present invention,
The inclined surface may be inclined 45 ° with respect to the second surface.

  According to such a light emitting device, the direction of light emitted from the semiconductor light emitting element and traveling in the horizontal direction can be changed to the vertical direction.

In the light emitting device according to the present invention,
A plurality of the semiconductor light emitting elements are provided,
The metal substrate has a plurality of the protrusions,
A plurality of the reflective films may be provided.

  According to such a light emitting device, it is possible to increase the luminance and to direct the light emitted from the plurality of semiconductor light emitting elements in the same direction.

A method for manufacturing a light emitting device according to the present invention includes:
Forming a hole defined in the first surface of the silicon substrate by a surface inclined with respect to the first surface;
Forming a reflective film on the inclined surface;
Forming a metal substrate on the first surface so as to fill the hole,
Etching the silicon substrate from the opposite side of the first surface to form a second surface of the substrate, and projecting a part of the reflective film and a part of the protrusion from the second surface;
Arranging the semiconductor light emitting element on the second surface so as to overlap the metal substrate in a plan view from the thickness direction of the silicon substrate;
Including
The reflective film is a film that reflects light emitted from the semiconductor light emitting element.

  According to such a method for manufacturing a light-emitting device, it is possible to form a light-emitting device that can change the traveling direction of light emitted from a semiconductor light-emitting element and can have high heat dissipation.

In the method for manufacturing a light emitting device according to the present invention,
The first surface has an off angle with respect to the (100) plane;
In the step of forming the hole, the hole may be formed by a wet etching method.

  According to such a method for manufacturing a light emitting device, the inclined surface of the silicon substrate can be a (111) surface or a surface equivalent to the (111) surface, and the inclination angle of the inclined surface with respect to the second surface can be determined. , (54.74−off angle magnitude) °. That is, the inclination angle of the inclined surface of the protrusion on which the reflective film is formed (the inclination angle of the inclined surface with respect to the second surface) can be adjusted according to the magnitude of the off-angle.

The projector according to the present invention is
A light emitting device according to the present invention;
A light modulation device that modulates light emitted from the light emitting device according to image information;
A projection device for projecting an image formed by the light modulation device;
including.

  According to such a projector, high luminance can be achieved by including the light emitting device according to the present invention.

FIG. 3 is a cross-sectional view schematically showing the light emitting device according to the embodiment. The top view which shows typically the light-emitting device which concerns on this embodiment. Sectional drawing which shows typically the silicon substrate of the light-emitting device which concerns on this embodiment. FIG. 3 is a cross-sectional view schematically showing a semiconductor light emitting element of the light emitting device according to the embodiment. Sectional drawing which shows typically the manufacturing process of the light-emitting device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the light-emitting device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the light-emitting device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the light-emitting device which concerns on this embodiment. Sectional drawing which shows typically the light-emitting device which concerns on the modification of this embodiment. The top view which shows typically the light-emitting device which concerns on the modification of this embodiment. 1 is a diagram schematically showing a projector according to an embodiment.

  DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. The embodiments described below do not unduly limit the contents of the present invention described in the claims. In addition, not all of the configurations described below are essential constituent requirements of the present invention.

1. First, the light emitting device according to the present embodiment will be described with reference to the drawings. FIG. 1 is a cross-sectional view schematically showing a light emitting device 100 according to this embodiment. FIG. 2 is a plan view schematically showing the light emitting device 100 according to the present embodiment. 1 is a cross-sectional view taken along the line II of FIG. For convenience, FIGS. 1 and 2 show an X axis, a Y axis, and a Z axis as three axes orthogonal to each other.

  As shown in FIGS. 1 and 2, the light emitting device 100 includes a silicon substrate 10, a metal substrate 20, a reflective film 30, and a semiconductor light emitting element 40. For convenience, FIGS. 1 and 2 illustrate the semiconductor light emitting element 40 in a simplified manner.

  The silicon substrate 10 has a first surface 12 and a second surface 14 opposite to the first surface 12. In the illustrated example, the first surface 12 and the second surface 14 are parallel to each other. The thickness of the silicon substrate 10 is, for example, 50 μm or more and 100 μm or less.

  The difference in thermal expansion coefficient between the silicon substrate 10 and the semiconductor light emitting element 40 is smaller than the difference in thermal expansion coefficient between the metal substrate 20 and the semiconductor light emitting element 40. By disposing the silicon substrate 10 between the metal substrate 20 and the semiconductor light emitting element 40, it is possible to suppress stress from being generated in the semiconductor light emitting element 40 due to a difference in thermal expansion coefficient between the metal substrate 20 and the semiconductor light emitting element 40. can do.

  Here, FIG. 3 is an enlarged view of a part of the silicon substrate 10 shown in FIG. As shown in FIG. 3, the silicon substrate 10 is, for example, a substrate cut out with an off angle α with respect to the surface S which is the (100) plane. That is, the first surface 12 and the second surface 14 of the substrate 10 can have an off angle α with respect to the (100) plane.

  A through hole 16 is formed in the silicon substrate 10. The through hole 16 penetrates the silicon substrate 10 from the first surface 12 to the second surface 14. The opening diameter of the first surface 12 of the through hole 16 is larger than the opening diameter of the second surface 14 of the through hole 16.

  The through hole 16 is defined by the third surface 17 and the fourth surface 18 of the silicon substrate 10. It can be said that the third surface 17 and the fourth surface 18 are the inner surfaces of the through hole 16. For example, when the through-hole 16 is formed by a wet etching method using an etchant such as potassium hydroxide (KOH) or hydroxide (TMAH), the third surface 17 and the fourth surface 18 are (111) surfaces or The surface is equivalent to the (111) surface. In this case, the inclination angle β1 of the third surface 17 with respect to the second surface 14 is 54.74 ° minus the off angle α (54.74−α) °, and when α = 9.74 °, β1 = 45 °. The inclination angle β2 of the fourth surface 18 with respect to the second surface 14 is 54.74 ° plus an off-angle α (54.74 + α) °. When α = 9.74 °, β2 = 64.48 ° It becomes.

  As shown in FIG. 1, the metal substrate 20 supports the silicon substrate 10. The material of the metal substrate 20 is, for example, a metal such as copper. The metal substrate 20 can have a higher thermal conductivity than the silicon substrate 10 and the semiconductor light emitting element 40.

  The metal substrate 20 has a base portion 22 and a projection portion 24. The base 22 is provided on the first surface 12 of the silicon substrate 10. In the example illustrated in FIG. 1, the shape of the base portion 22 is a plate shape, and the silicon substrate 10 is provided on the base portion 22.

  The protruding portion 24 is provided on the base portion 22. The protruding portion 24 is formed integrally with the base portion 22. The protrusion 24 has a portion provided in the through hole 16 and a portion protruding upward from the second surface 14, and penetrates the silicon substrate 10. Although the cross-sectional shape of the protrusion part 24 is not specifically limited, In the example shown in FIG. The planar shape of the protrusion 24 is not particularly limited, but is rectangular in the example shown in FIG.

  The protrusion 24 has an inclined surface 26 that is inclined with respect to the second surface 14 of the silicon substrate 10. The inclination angle θ of the inclined surface 26 with respect to the second surface 14 is 45 °, for example. As described above, when α = 9.74 ° and β1 = 45 °, θ = 45 ° can be obtained.

  The inclined surface 26 faces the third surface 17 of the silicon substrate 10 with the reflective film 30 interposed therebetween. In the illustrated example, the inclined surface 26 and the third surface 17 are parallel to each other. As the inclined surface 26 moves from the first surface 12 to the second surface 14, the width of the protrusion 24 (a direction (X-axis direction) orthogonal to the direction (Z-axis direction) from the first surface 12 to the second surface 14. Is inclined so as to be smaller.

  The reflective film 30 is provided on the inclined surface 26 of the protrusion 24. The reflective film 30 can have a uniform film thickness, and the surface of the reflective film 30 (the surface opposite to the surface in contact with the inclined surface 26) is parallel to the inclined surface 26, for example. That is, the surface of the reflective film 30 is inclined by 45 ° with respect to the second surface 14, for example.

  As the reflective film 30, for example, a metal film such as copper, aluminum, or gold, a dielectric multilayer film in which an aluminum oxide layer, a titanium oxide layer, or the like is stacked is used. The reflective film 30 can reflect the light L emitted from the semiconductor light emitting element 40. More specifically, the reflective film 30 can have a high reflectance in the wavelength band of light generated in the semiconductor light emitting element 40, and the reflectance is desirably 100% or close thereto. In the example shown in FIG. 1, the reflective film 30 reflects the light L emitted from the semiconductor light emitting element 40 and traveling in the + X direction in the + Z direction (perpendicular direction of the second surface 14).

  The semiconductor light emitting element 40 is provided on the second surface 14 of the silicon substrate 10. In the example shown in FIG. 1, the semiconductor light emitting element 40 is provided on the silicon substrate 10. As shown in FIG. 2, the semiconductor light emitting element 40 overlaps the metal substrate 20 in a plan view from the thickness direction (Z-axis direction) of the silicon substrate 10 (hereinafter, also simply referred to as “plan view”).

  Although the number of the semiconductor light emitting elements 40 is not particularly limited, in the illustrated example, three semiconductor light emitting elements 40 are provided and arranged along the X axis. Thus, the plurality of semiconductor light emitting elements 40 may be arranged in an array. Depending on the number of semiconductor light emitting elements 40, a plurality of protrusions 24 can be provided. Similarly, a plurality of inclined surfaces 26 and reflective films 30 can be provided according to the number of semiconductor light emitting elements 40.

  In the illustrated example, the semiconductor light emitting element 40 is separated from the reflective film 30, but may be in contact with the reflective film 30. Since the semiconductor light emitting element 40 is in contact with the reflective film 30, the alignment accuracy between the reflective film 30 and the semiconductor light emitting element 40 can be improved.

  As the semiconductor light emitting element 40, for example, a semiconductor laser, a super luminescent diode (SLD), or the like can be used.

  Here, FIG. 4 is a cross-sectional view schematically showing the semiconductor light emitting device 40. As shown in FIG. 4, the semiconductor light emitting device 40 includes a substrate 41, a first cladding layer 42, an active layer 43, a second cladding layer 44, a contact layer 45, a first electrode 46, and a second electrode. 47 and the reflection part 48 can be provided.

  As the substrate 41, for example, a first conductivity type (for example, n-type) GaAs substrate or the like is used.

  The first cladding layer 42 is formed on the substrate 41. As the first cladding layer 42, for example, an n-type InGaAlP layer is used.

  The active layer 43 is formed on the first cladding layer 42. The active layer 43 has, for example, a multiple quantum well (MQW) structure in which three quantum well structures each composed of an InGaP well layer and an InGaAlP barrier layer are stacked.

  The second cladding layer 44 is formed on the active layer 43. As the second cladding layer 44, for example, a second conductivity type (for example, p-type) InGaAlP layer is used.

  For example, the p-type second cladding layer 44, the active layer 43 not doped with impurities, and the n-type first cladding layer 42 constitute a pin diode. Each of the first cladding layer 42 and the second cladding layer 44 is a layer having a larger forbidden band width and a smaller refractive index than the active layer 43. The active layer 43 has a function of generating light and guiding it while amplifying the light. The first cladding layer 42 and the second cladding layer 44 have a function of confining injected carriers (electrons and holes) and light (a function of suppressing light leakage) with the active layer 43 interposed therebetween.

  In the semiconductor light emitting device 40, when a forward bias voltage of a pin diode is applied between the first electrode 46 and the second electrode 47 (current is injected), recombination of electrons and holes in the active layer 43 occurs. Occur. This recombination causes light emission. With this generated light as a starting point, stimulated emission occurs in a chain, and the light intensity is amplified in the active layer 43. The light whose intensity has been amplified is emitted as light L from the first side surface 43 a of the active layer 43.

  As described above, the semiconductor light emitting device 40 is a so-called edge-emitting light emitting device that emits light from the side surface of the active layer 43.

  In the illustrated example, a reflective portion 48 is provided on the second side surface 43 b opposite to the first side surface 43 a of the active layer 43. The light is not emitted from the second side surface 43 b by the reflecting portion 48. As the reflecting portion 48, for example, a dielectric multilayer film in which an aluminum oxide layer and a titanium oxide layer are laminated is used.

  Although not shown, the reflecting portion 48 may not be provided, and light may be emitted from the second side surface 43b. Thus, when light is emitted from both side surfaces 43a and 43b, the protrusion 24 and the reflective film 30 can be provided corresponding to each of the both side surfaces 43a and 43b.

  The contact layer 45 is formed on the second cladding layer 44. As the contact layer 45, for example, a p-type GaAs layer is used.

  The first electrode 46 is formed on the entire lower surface of the substrate 41. As the first electrode 46, for example, a layer in which a Cr layer, an AuGe layer, a Ni layer, and an Au layer are stacked in this order from the substrate 41 side is used.

  The second electrode 47 is formed on the contact layer 45. As the second electrode 47, for example, a layer in which a Cr layer, an AuZn layer, and an Au layer are stacked in this order from the contact layer 45 side is used.

  The semiconductor light emitting device 40 may be provided on the silicon substrate 10 with the first electrode 46 side facing the second surface 14, or the second electrode 47 side facing the second surface 14 and the silicon substrate 10. It may be provided above.

  A second contact layer (not shown) may be provided between the first cladding layer 42 and the substrate 41, and the first electrode 46 may be provided on the second contact layer. Thereby, a single-sided electrode structure can be obtained. In this embodiment, the semiconductor light emitting element 40 is provided on the silicon substrate 10 with the substrate 41 side facing the second surface 14.

  The semiconductor light emitting element 40 is formed by, for example, a semiconductor processing technique such as an epitaxial growth technique, a photolithography technique, and an etching technique.

  The light emitting device 100 according to the present embodiment has, for example, the following characteristics.

  According to the light emitting device 100, the protrusion 24 of the metal substrate 20 has the inclined surface 26 that is inclined with respect to the second surface 14 on which the semiconductor light emitting element 40 is provided. The inclined surface 26 is provided with a reflective film 30 that reflects the light L emitted from the semiconductor light emitting element 40. Thereby, in the light emitting device 100, the traveling direction of the light L emitted from the semiconductor light emitting element 40 can be changed.

  Furthermore, in the light emitting device 100, the semiconductor light emitting element 40 overlaps the metal substrate 20 in plan view. Therefore, the light-emitting device 100 can have higher heat dissipation than when the semiconductor light-emitting element and the metal substrate do not overlap or when the metal substrate is not provided. In the light emitting device 100, the heat dissipation can be easily adjusted by the thickness of the silicon substrate 10. Thereby, in the light-emitting device 100, it can suppress that a brightness | luminance falls by the heat_generation | fever of the semiconductor light-emitting element 40. FIG.

  Further, in the light emitting device 100, the silicon substrate 10 is provided between the metal substrate 20 and the semiconductor light emitting element 40. Thereby, it can suppress that a stress arises in the semiconductor light-emitting device 40 due to the difference in thermal expansion coefficient between the metal substrate 20 and the semiconductor light-emitting device 40.

  Furthermore, in the light emitting device 100, a part of the protrusion 24 that penetrates the silicon substrate 10 is provided in the through hole 16 that penetrates the silicon substrate 10. Since the through-hole 16 can be formed by a semiconductor processing technique such as a photolithography technique and an etching technique, for example, the second hole 14 on which the semiconductor light emitting element 40 is provided can have high positional accuracy. Therefore, the projection 24 and the reflective film 30 provided on the inclined surface 26 of the projection 24 can also have high positional accuracy on the second surface 14. As a result, for example, the alignment accuracy between the reflective film 30 and the semiconductor light emitting element 40 can be improved.

  According to the light emitting device 100, the inclined surface 26 is inclined 45 ° with respect to the second surface 14 on which the semiconductor light emitting element 40 is provided. Thereby, the direction of the light L emitted from the semiconductor light emitting element 40 and traveling in the horizontal direction (+ X direction) can be changed to the vertical direction (+ Z direction).

  According to the light emitting device 100, a plurality of semiconductor light emitting elements 40 are provided. Correspondingly, the metal substrate 20 has a plurality of protrusions 24, and a plurality of reflective films 30 can be provided. Thereby, the brightness of the light emitting device 100 can be increased, and the light L emitted from the plurality of semiconductor light emitting elements 40 can be directed in the same direction.

2. Method for Manufacturing Light-Emitting Device Next, a method for manufacturing a light-emitting device according to the present embodiment will be described with reference to the drawings. 5-8 is sectional drawing which shows typically the manufacturing process of the light-emitting device 100 which concerns on this embodiment. 5 to 7 show a state that is upside down with respect to FIG.

  As shown in FIG. 5, a substrate 10 cut out with an off angle α (see FIG. 4) with respect to the surface S which is the (100) plane is prepared. The magnitude of the off angle α is, for example, 9.74 °.

  Next, the silicon substrate 10 is patterned to form holes 16 a in the first surface 12. The patterning is performed using a photolithography technique and an etching technique. More specifically, the hole 16a is formed by a wet etching method using an etching solution such as potassium hydroxide (KOH) or hydroxide (TMAH). Thus, the third surface 17 and the fourth surface 18 that define the hole 16a can be (111) surfaces or surfaces equivalent to the (111) surface, can do. Therefore, as described above, by setting α = 9.74 °, the third surface 17 can be inclined by 45 ° with respect to the second surface 14.

  As shown in FIG. 6, the reflective film 30 is formed on the third surface 17. The reflective film 30 is formed by, for example, a CVD (Chemical Vapor Deposition) method, a sputtering method, or an ion assisted deposition (Ion Assisted Deposition) method.

  Here, for example, since the third surface 17 is a (111) surface or a surface equivalent to the (111) surface, it can have high flatness. Therefore, the surface in contact with the third surface 17 of the reflective film 30 can also have high flatness. Thereby, the reflective film 30 can reflect the light L efficiently in a desired direction.

  As shown in FIG. 7, the metal substrate 20 is formed on the first surface 12 so as to fill the hole 16a. That is, the first surface 12, the surface of the reflective film 30 (the surface opposite to the surface in contact with the third surface 17), and the fourth surface 18 are covered with the metal substrate 20. A portion of the metal substrate 20 provided in the hole portion 16 a becomes a protruding portion 24, and a portion in contact with the surface of the reflective film 30 becomes an inclined surface 26. The metal substrate 20 is formed by, for example, forming metal powder on the first surface 12 so as to fill the hole 16a and then applying pressure to the metal powder.

  As shown in FIG. 8, the silicon substrate 10 is etched from the opposite side of the first surface 12 to form the second surface 14 of the substrate, and a part of the reflective film 30 and one of the protrusions 24 are formed from the second surface 14. Project the part. In the illustrated example, a part of the reflection film 30 and a part of the protrusion 24 are exposed by the etching. The etching may be performed by a dry etching method or a wet etching method. By this etching, the second surface 14 of the silicon substrate 10 is formed (exposed). Further, through holes 16 are formed in the silicon substrate 10 by the etching.

  As shown in FIG. 1, the semiconductor light emitting element 40 is disposed on the second surface 14. More specifically, the semiconductor light emitting element 40 is mounted on the second surface 14 via a brazing material (not shown).

  Through the above steps, the light emitting device 100 can be manufactured.

  The method for manufacturing the light emitting device 100 according to the present embodiment has the following features, for example.

  According to the method for manufacturing the light emitting device 100, the protrusion 24 having the inclined surface 26 that is inclined with respect to the second surface 14 on which the semiconductor light emitting element 40 is provided can be formed. A reflective film 30 that reflects the light L emitted from the semiconductor light emitting element 40 can be formed on the inclined surface 26. Thereby, the light emitting device 100 that can change the traveling direction of the light L emitted from the semiconductor light emitting element 40 can be formed.

  Furthermore, in the method for manufacturing the light emitting device 100, the semiconductor light emitting element 40 can be disposed so as to overlap the metal substrate 20 in plan view. Therefore, it is possible to form the light emitting device 100 having high heat dissipation as compared to the case where the semiconductor light emitting element and the metal substrate do not overlap or the case where the metal substrate is not provided.

  Furthermore, in the method for manufacturing the light emitting device 100, the reflective film 30 and the protrusion 24 can be provided in the hole 16a formed by a semiconductor processing technique such as a photolithography technique and an etching technique. Therefore, the reflective film 30 can have high positional accuracy on the second surface 14 on which the semiconductor light emitting element 40 is provided. As a result, for example, the alignment accuracy between the reflective film 30 and the semiconductor light emitting element 40 can be improved. Further, by forming the hole 16a by a semiconductor processing technique, the projection 24 can be reduced in size.

  According to the method for manufacturing the light emitting device 100, the first surface 12 has an off angle α with respect to the (100) surface, and the hole 16a can be formed by wet etching. As a result, the third surface 17 can be a (111) surface or a surface equivalent to the (111) surface, and the inclination angle β1 of the third surface 17 with respect to the second surface 14 is (54.74−α). ° can be. That is, the inclination angle θ of the inclined surface 26 of the protrusion 24 on which the reflective film 30 is formed (the inclination angle of the inclined surface 26 with respect to the second surface 14) can be adjusted by the magnitude of the off angle α. For example, if α = 9.74 °, θ = 45 ° can be obtained. Thereby, the direction of the light L traveling in the horizontal direction (+ X direction) from the semiconductor light emitting element 40 can be changed to the vertical direction (+ Z direction).

3. Next, a light emitting device according to a modification of the present embodiment will be described with reference to the drawings. FIG. 9 is a cross-sectional view schematically showing a light emitting device 200 according to a modification of the present embodiment. FIG. 10 is a plan view schematically showing the light emitting device 200 according to the present embodiment. 9 is a cross-sectional view taken along line IX-IX in FIG. Hereinafter, in the light emitting device 200 according to the modification of the present embodiment, members having the same functions as those of the constituent members of the light emitting device 100 according to the present embodiment are denoted by the same reference numerals, and detailed description thereof is omitted. For convenience, FIG. 9 shows the semiconductor light emitting element 40 in a simplified manner.

  In the light emitting device 200, as shown in FIGS. 9 and 10, a recess 19 is formed in the first surface 12 of the silicon substrate 10. Further, in the light emitting device 200, the metal substrate 20 has a convex portion 29.

  The convex portion 29 is formed integrally with the base portion 22. The convex portion 29 has a shape complementary to the concave portion 19 and is provided in the concave portion 19. That is, a part of the metal substrate 20 is provided in the recess 19. The concave portion 19 and the convex portion 29 overlap the semiconductor light emitting element 40 in plan view as shown in FIG.

  The recess 19 is formed by, for example, a photolithography technique and an etching technique. More specifically, the recess 19 is formed by a dry etching method. The step of forming the recess 19 may be performed before or after the step of forming the hole 16a (see FIG. 5).

  According to the light emitting device 200, for example, the distance between the semiconductor light emitting element 40 and the metal substrate 20 can be reduced by the protrusion 29 compared to the light emitting device 100. Therefore, the light emitting device 200 can have even higher heat dissipation.

4). Next, the projector according to the present embodiment will be described with reference to the drawings. FIG. 11 is a diagram schematically showing a projector 500 according to the present embodiment. For the sake of convenience, in FIG. 11, the housing constituting the projector 500 is omitted.

  As shown in FIG. 11, the projector 500 includes a red light source 100R that emits red light, green light, and blue light, a green light source 100G, and a blue light source 100B. As the light source of the projector 500, the light emitting device according to the present invention can be used. Hereinafter, as illustrated in FIG. 11, an example in which the light emitting device 100 (the red light emitting device 100R, the green light emitting device 100G, and the blue light emitting device 100B) is used as the light source of the projector 500 will be described. In FIG. 11, the light emitting device 100 is illustrated in a simplified manner for convenience.

  The projector 500 further includes lens arrays 502R, 502G, and 502B, transmissive liquid crystal light valves (light modulation devices) 504R, 504G, and 504B, and a projection lens (projection device) 508.

  Light emitted from the light sources 100R, 100G, and 100B is incident on the lens arrays 502R, 502G, and 502B. The lens array 502 can have a convex curved surface on the liquid crystal light valve 504 side. Thereby, the light incident on the lens array 502 can be condensed or the diffusion angle can be reduced by the convex curved surface. Therefore, the liquid crystal light valve 504 can be irradiated with good uniformity.

  The light condensed by the lens arrays 502R, 502G, and 502B is incident on the liquid crystal light valves 504R, 504G, and 504B. Each of the liquid crystal light valves 504R, 504G, and 504B modulates incident light according to image information.

  The three color lights modulated by the liquid crystal light valves 504R, 504G, and 504B are incident on the cross dichroic prism 506. For example, the cross dichroic prism 506 is formed by bonding four right angle prisms, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are arranged in a cross shape on the inner surface thereof. . Three color lights are synthesized by these dielectric multilayer films.

  The light synthesized by the cross dichroic prism 506 enters a projection lens 508 that is a projection optical system. The projection lens 508 enlarges and projects the image formed by the liquid crystal light valves 504R, 504G, and 504B onto the screen (display surface) 510.

  The projector 500 includes the light emitting device 100 that can change the traveling direction of the light emitted from the semiconductor light emitting element and has high heat dissipation. Therefore, the projector 500 can achieve high brightness.

  In the above example, a transmissive liquid crystal light valve is used as the light modulation device. However, a light valve other than liquid crystal may be used, or a reflective light valve may be used. Examples of such a light valve include a reflection type liquid crystal light valve and a digital micromirror device (Digital Micromirror Device). Further, the configuration of the projection optical system is appropriately changed depending on the type of light valve used.

  In addition, the light source 100 is a scanning type image display device having a scanning unit that is an image forming device that displays an image of a desired size on the display surface by causing the light from the light source 100 to scan on the screen. It can also be applied to a light source device of a projector.

  The present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same objects and effects). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that exhibits the same operational effects as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

10 silicon substrate, 12 1st surface, 14 2nd surface, 16 through-hole, 16a hole,
17 3rd surface, 18 4th surface, 19 recessed part, 20 metal substrate, 22 base,
24 projecting portions, 26 inclined surfaces, 29 convex portions, 30 reflecting films, 40 semiconductor light emitting devices,
41 substrate, 42 first cladding layer, 43 active layer, 43a first side surface,
43b second side surface, 44 second cladding layer, 45 contact layer, 46 first electrode,
47 second electrode, 48 reflector, 100 light emitting device, 200 light emitting device,
500 projector, 502 lens array, 504 light valve,
506 Cross dichroic prism, 508 projection lens, 510 screen

Claims (7)

A silicon substrate;
A base provided on the first surface of the silicon substrate, and a metal substrate having a protrusion provided on the base and penetrating the silicon substrate;
A semiconductor light emitting device provided on a second surface opposite to the first surface of the silicon substrate;
A reflective film that is provided on the protrusion and reflects light emitted from the semiconductor light emitting element;
Including
The semiconductor light emitting element is overlapped with the metal substrate in a plan view from the thickness direction of the silicon substrate,
The protrusion has an inclined surface inclined with respect to the second surface,
The light-emitting device, wherein the reflective film is provided on the inclined surface. The first surface is provided with a recess,
The concave portion overlaps the semiconductor light emitting element in a plan view from the thickness direction of the silicon substrate,
The light emitting device according to claim 1, wherein a part of the metal substrate is provided in the recess.   The light emitting device according to claim 1, wherein the inclined surface is inclined by 45 ° with respect to the second surface. A plurality of the semiconductor light emitting elements are provided,
The metal substrate has a plurality of the protrusions,
The light emitting device according to claim 1, wherein a plurality of the reflective films are provided. Forming a hole defined in the first surface of the silicon substrate by a surface inclined with respect to the first surface;
Forming a reflective film on the inclined surface;
Forming a metal substrate on the first surface so as to fill the hole,
Etching the silicon substrate from the opposite side of the first surface to form a second surface of the substrate, and projecting a part of the reflective film and a part of the protrusion from the second surface;
Arranging the semiconductor light emitting element on the second surface so as to overlap the metal substrate in a plan view from the thickness direction of the silicon substrate;
Including
The method of manufacturing a light emitting device, wherein the reflective film is a film that reflects light emitted from the semiconductor light emitting element. The first surface has an off angle with respect to the (100) plane;
6. The method for manufacturing a light emitting device according to claim 5, wherein, in the step of forming the hole, the hole is formed by a wet etching method. A light emitting device according to any one of claims 1 to 4,
A light modulation device that modulates light emitted from the light emitting device according to image information;
A projection device for projecting an image formed by the light modulation device;
Including a projector.

Images