JP2013140918A - Plasma processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma processing device capable of easily and precisely restoring an electrode position when replacing an electrode.SOLUTION: First and second electrodes 11, 12 include columnar bosses (protrusions) 21 in which tabs T provided at four corners project downward. A location member 13 is provided with a cylindrical recess 22 formed on a location face 14. An outside diameter of the boss 21 and an inside diameter of the recess 22 are determined corresponding to a required positioning accuracy. Accordingly, when the tabs T of the first and second electrodes 11, 12 are located on the location face 14 of the location member 13, the boss 21 is fitted in the recess 22, and a location position thereof is determined.

Description

  The present invention relates to a plasma processing apparatus.

A plasma processing apparatus is an apparatus in which a substrate, which is an object to be processed, is installed on one of a pair of opposed electrodes arranged in parallel, and plasma processing is performed on the substrate surface by causing plasma discharge between the electrodes in a reactive gas atmosphere. It is.
In order to stably generate plasma, it is important to manage the discharge gap length between the substrate and the electrode facing the substrate, so the distance between electrodes (for example, about 5 to 30 mm) is maintained constant.

  Specifically, the four corners of the outer peripheral edge of the counter electrode are placed on a plurality of support pieces fixed in the chamber, and the height of each electrode is adjusted with screws to maintain a predetermined distance between the electrodes. (See Patent Document 1).

JP 2010-212427 A

  By the way, in a plasma processing apparatus, in order to clean and repair an electrode, it is necessary to exchange an electrode. However, when the electrode is replaced, it is important to restore the position of the electrode accurately in order to reproduce the discharge. However, this operation requires time and skill. The present invention has been made in view of such circumstances, and provides a plasma processing apparatus that can easily restore the position of an electrode easily when replacing an electrode.

  The present invention relates to a chamber, a flat plate-like first and second electrode that is disposed in the chamber and generates plasma discharge, and a first and second electrode that are placed horizontally and opposite to each other. A plasma processing apparatus is provided that includes a member and a positioning mechanism that defines the horizontal positions of the first and second electrodes when the first and second electrodes are placed on the placement member.

  According to this invention, when the first and second electrodes are placed on the placement member, the first or second electrode is provided with the positioning mechanism that defines the horizontal position of the first and second electrodes. At the time of replacement, the position of the electrode to be replaced is defined by the positioning mechanism, and the electrode position is easily restored.

BRIEF DESCRIPTION OF THE DRAWINGS It is structure explanatory drawing of the plasma processing apparatus of Embodiment 1 of this invention. It is a principal part top view of the plasma processing apparatus of FIG. It is explanatory drawing of the positioning mechanism of the plasma processing apparatus of FIG. It is explanatory drawing which shows the 1st modification of the positioning mechanism of FIG. It is explanatory drawing which shows the 2nd modification of the positioning mechanism of FIG. It is structure explanatory drawing of the plasma processing apparatus of Embodiment 2 of this invention. It is explanatory drawing which shows the electric power feeding mechanism of the plasma processing apparatus of FIG. It is explanatory drawing which shows the 1st modification of the electric power feeding mechanism of FIG. It is explanatory drawing which shows the 2nd modification of the electric power feeding mechanism of FIG.

  The plasma processing apparatus of the present invention has a chamber, flat plate-like first and second electrodes that are disposed in the chamber and generate plasma discharge, and the first and second electrodes mounted horizontally and opposite to each other. And a positioning mechanism that defines the horizontal positions of the first and second electrodes when the first and second electrodes are mounted on the mounting member.

The positioning mechanism may include a protrusion protruding downward on at least one of the first and second electrodes and a recess formed on the mounting member and accommodating the protrusion.
The positioning mechanism may include a protrusion protruding downward on at least one of the first and second electrodes, a through hole formed in the mounting member and penetrating the protrusion, and a retaining member for the protruding protrusion.
The positioning mechanism may include a recess formed in at least one of the first and second electrodes and a protrusion formed in the mounting member and accommodated in the recess.
The mounting member may include a power feeding terminal that contacts and feeds power to at least one of the first and second electrodes, and may include a part of a power feeding cable that connects the power feeding terminal and a power source.

Hereinafter, the present invention will be described in detail using Embodiments 1 and 2 shown in the drawings.
Embodiment 1
FIG. 1 is a structural explanatory view showing a plasma processing apparatus according to Embodiment 1 of the present invention.
As shown in FIG. 1, the plasma processing apparatus of Embodiment 1 includes a stainless steel chamber M that constitutes a reaction chamber, and two pairs of flat rectangular plates that are disposed in the chamber M and generate plasma discharge. The first electrode 11 and the second electrode 12, the ceramic mounting member 13 for mounting the first electrode 11 and the second electrode 12 in parallel and horizontally facing each other, and the electrode through the first electrode 11 A voltage is introduced between the gas introduction pipe 15 for introducing the reaction gas G between them, the exhaust part 6 for exhausting the reaction gas from the chamber M, and between the first electrode 11 and the second electrode 12 via the feeding cable 16 and the ground cable 17. And a power supply unit E for applying.

  In the first embodiment, a substrate S, which is an object to be processed, is placed on the second electrode 12, and the surface of the substrate S is subjected to plasma processing, for example, a silicon film is formed or dry etching is performed. In the first embodiment, an example in which two pairs of the first and second electrodes 11 and 12 are arranged in the chamber M in two upper and lower stages is shown, but one pair or three or more pairs may be used.

The exhaust unit 6 includes a vacuum pump 6a, an exhaust pipe 6b that connects the vacuum pump 6a and the chamber M, and a pressure controller 6c disposed between the chamber M and the vacuum pump 6a.
The power source E is, for example, a plasma excitation power source that generates power of 10 W to 100 kW at a frequency of 1 to 60 MHz, specifically, 10 W to 10 kW at 13.56 MHz to 60 MHz, and a high frequency generator E ₁ . includes an impedance matching device E _2.

FIG. 2 is a top view of the first electrode 11 and the second electrode 12.
As shown in FIG. 2, the first electrode 11 and the second electrode 12 are rectangular and are made of stainless steel, aluminum alloy, or the like. Tabs T made of the same material are provided at the four corners of the first electrode 11 and the second electrode 12, respectively. Details will be described later.

  The first electrode 11 has a hollow inside, and a plurality of through holes are formed in the plasma discharge surface facing the second electrode 12 to be paired. The through holes are preferably processed by circular holes having a diameter of 0.1 mm to 2 mm at a pitch of several mm to several cm.

In addition, a gas introduction pipe 15 is connected to one end face of the first electrode 11, and a reactive gas G is supplied into the first electrode 11 from a gas supply source (not shown), and the substrate S is supplied from a large number of through holes. It is comprised so that it may eject toward the surface. As the source gas, for example, SiH ₄ (monosilane) gas diluted with H ₂ is used for forming a silicon film, and for dry etching, for example, NF 3 (nitrogen trifluoride) diluted with Ar is used. used.

  The second electrode 12 disposed below the first electrode 11 has a heater (not shown) inside, and a substrate S is installed on the upper surface, and heats the substrate S (for example, a silicon substrate, a glass substrate, etc.) during plasma discharge processing. To do.

The second electrode 12 is made of a material having conductivity and heat resistance, such as stainless steel, aluminum alloy, and carbon.
The dimensions of the first electrode 11 and the second electrode 12 are determined to be appropriate values in accordance with the dimension of the substrate S for forming the thin film. For example, the substrate S is designed to have a size of 1000 to 1500 mm × 600 to 1000 mm with respect to a size of 900 to 1200 mm × 400 to 900 mm.

  The heater built in the second electrode 12 controls the heating of the second electrode 12 from room temperature to 300 ° C., and for example, a heater incorporating a sheath heater and a thermocouple can be used.

FIG. 3 is an explanatory view showing a positioning mechanism 40 of the plasma processing apparatus shown in FIG.
As shown in the figure, the first and second electrodes 11 and 12 include columnar bosses (projections) 21 in which tabs T (see FIG. 2) provided at four corners protrude downward.

On the other hand, the mounting member 13 includes a cylindrical recess 22 formed on the mounting surface 14. The outer diameter of the boss 21 and the inner diameter of the recess 22 are determined in accordance with the required positioning accuracy.
Therefore, in this embodiment, when the tabs T of the first and second electrodes 11 and 12 are placed on the placement surface 14 of the placement member 13, the boss 21 is fitted into the recess 22 and the placement position thereof. Is determined.
Therefore, even if the first electrode 11 or the second electrode 12 is replaced with a new electrode, the mounting position before the replacement can be accurately restored.

FIG. 4 is an explanatory view showing a first modification 40a of the positioning mechanism of FIG.
In this modification 40a, the mounting member 13 includes a through-round hole 24 instead of the recess 22 (FIG. 3).

  The tab T is provided with a cylindrical boss 23 longer than the boss 21 (FIG. 3). Is provided.

Therefore, in this modified example 40a, when the tab T of the first and second electrodes 11 and 12 is placed on the placement surface 14 of the placement member 13, the boss 23 penetrates the through-round hole 24, A placement position is determined. The first and second electrodes 11 and 12 are firmly fixed to the mounting member 13 by inserting the lock lever 26 into the groove 25.
Note that a pin may be used instead of the lock lever 26 and the pin may be passed through a lateral hole formed in the boss 23 to fix the boss 23 to the mounting member 13.

FIG. 5 is an explanatory view showing a second modification 40b of the positioning mechanism of FIG.
In this modified example 40b, the tab T includes a through-round hole 28 instead of the boss 21. On the other hand, the mounting member 13 includes a columnar boss (projection) 27 protruding upward on the mounting surface 14. The outer diameter of the boss 27 and the inner diameter of the through-round hole 28 are determined in accordance with the required positioning accuracy.

  Therefore, in the modified example 40b, when the tab T of the first and second electrodes 11 and 12 is placed on the placement surface 14 of the placement member 13, the boss 27 penetrates the through-round hole 28, A placement position is determined. Therefore, even if the first electrode 11 or the second electrode 12 is newly replaced, the mounting position before the replacement is accurately restored.

Embodiment 2
FIG. 6 is a structural explanatory view showing a plasma processing apparatus according to Embodiment 2 of the present invention.
In this embodiment, a part of the mounting member 13 for mounting the first electrode 11 is on the mounting member 13a, and a part of the mounting member 13 for mounting the second electrode 12 is on the mounting member 13a. Has been replaced. The power feeding cable 16 is connected to the mounting member 13 a for mounting the first electrode 11, and the ground cable 17 is connected to the mounting member 13 a for mounting the second electrode 12.
Since the other configuration is the same as that of the first embodiment, description thereof is omitted.

FIG. 7 is an explanatory view showing the power feeding mechanism 50 of the mounting member 13a.
In FIG. 7, the positioning mechanism is the same as that of FIG.
The power feeding mechanism 50 passes through a coil spring-shaped phosphor bronze power feeding terminal 31 provided at the bottom of the recess 22, a cable guide path 29 formed in a tunnel shape on the mounting member 13 a, and the cable guide path 29. The power supply terminal 31 includes power supply or ground cables 16 and 17 connected to the power supply terminal 31.

  In such a configuration, when the first electrode 11 or the second electrode 12 is mounted on the mounting member 13 a and the boss 21 is inserted into the recess 22, the tip of the boss 21 is added to the coil spring-shaped power supply terminal 31. The first electrode 11 or the second electrode 12 and the power source E are energized through pressure contact, and the power supply terminal 31 and the power supply cable 16 or the ground cable 17 are used. The mounting member 13 a is formed of an insulating material (ceramic) in the same manner as the mounting member 13.

  Therefore, even if the first electrode 11 or the second electrode 12 is newly replaced, the connection and separation work of the power supply cable 16 and the ground cable 17 is not necessary, and the replacement work is facilitated.

FIG. 8 is an explanatory view showing a first modification 50a of the power feeding mechanism of the mounting member 13a.
In FIG. 8, the positioning mechanism is the same as that of FIG.
The power supply mechanism 50a includes a ring-shaped copper alloy power supply terminal 32 fitted in a ring-shaped recess 30 at the periphery of the upper opening of the through-hole 24, and a cable guide path 29 formed in a tunnel shape on the mounting member 13a. The power supply or grounding cables 16 and 17 are connected to the power supply terminal 32 through the cable guide path 29.

In such a configuration, when the first electrode 11 or the second electrode 12 is mounted on the mounting member 13 a and the boss 23 penetrates the through-round hole 24, the lower surface of the tab T is pressed against the ring-shaped power supply terminal 32. The first electrode 11 or the second electrode 12 and the power supply unit E are energized through the power supply terminal 32 and the power supply cable 16 or the ground cable 17.
Therefore, even if the first electrode 11 or the second electrode 12 is newly replaced, the connection and separation work of the power supply cable 16 and the ground cable 17 is not necessary, and the replacement work is facilitated.

FIG. 9 is an explanatory view showing a second modification 50b of the power feeding mechanism of the mounting member 13a.
In FIG. 9, the positioning mechanism is the same as that of FIG.
The power supply mechanism 50b includes a ring-shaped copper alloy power supply terminal 32 fitted into a ring-shaped recess 30 at the periphery of the boss 27 of the mounting surface 14, and a cable guide path 29 formed in a tunnel shape on the mounting member 13a. And power supply or ground cables 16 and 17 connected to the power supply terminal 31 through the cable guide path 29.

In such a configuration, when the first electrode 11 or the second electrode 12 is mounted on the mounting member 13 a and the boss 27 penetrates the through-round hole 28, the lower surface of the tab T is pressed against the ring-shaped power supply terminal 32. The first electrode 11 or the second electrode 12 and the power supply unit E are energized through the power supply terminal 32 and the power supply cable 16 or the ground cable 17.
Therefore, even if the first electrode 11 or the second electrode 12 is newly replaced, the connection / separation work of the power supply cable 16 and the ground cable 17 is not necessary, and the replacement work is facilitated.

6 Exhaust part 11 1st electrode 12 2nd electrode 13 Mounting member 13a Mounting member 14 Mounting surface 15 Gas introduction pipe 16 Power supply cable 17 Grounding cable 21 Boss 22 Recess 23 Boss 24 Through-round hole 25 Groove 26 Lock lever 27 Boss 28 Through round hole 29 Cable guide path 30 Ring-shaped recess 31 Feed terminal 32 Feed terminal 40, 40a, 40b Positioning mechanism 50, 50a, 50b Feed mechanism M Chamber S Substrate T Tab G Gas E Power source E ₁ High frequency generator E ₂ Impedance matcher

Claims (5)

  A chamber, a flat plate-shaped first and second electrode disposed in the chamber for generating plasma discharge, a mounting member for mounting the first and second electrodes horizontally and opposite each other, A plasma processing apparatus comprising: a positioning mechanism that defines a horizontal position of the first and second electrodes when the first and second electrodes are placed on the placement member.   The plasma processing apparatus according to claim 1, wherein the positioning mechanism includes a protrusion projecting downward on at least one of the first electrode and the second electrode, and a recess formed on the mounting member and accommodating the protrusion.   The positioning mechanism includes a protrusion protruding downward on at least one of the first and second electrodes, a through hole formed in the mounting member and penetrating the protrusion, and a retaining member for the protruding protrusion. Plasma processing equipment.   The plasma processing apparatus according to claim 1, wherein the positioning mechanism includes a recess formed in at least one of the first and second electrodes, and a protrusion formed in the mounting member and accommodated in the recess.   The mounting member includes a power supply terminal that contacts and feeds power to at least one of the first and second electrodes, and includes a part of an energization cable that connects the power supply terminal and a power source. The plasma processing apparatus as described in any one.

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