JP2013131515A - Nitride semiconductor light-emitting element and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a highly-reliable flip-chip nitride semiconductor light-emitting element having metal bumps with a uniform height, and to provide a method of manufacturing the same.SOLUTION: In a method of manufacturing a nitride semiconductor light-emitting element, a protection layer is removed by using a first resist pattern 30 having an opening on an n-side electrode connection surface and on a p-side electrode connection surface of a nitride semiconductor light-emitting element structure 10 as a mask, and then, a first metal layer 25 to be an n-side electrode and a p-side electrode is formed without removing the first resist pattern 30. Next, a second resist pattern 31 having openings 31a and 31b is formed on the opening of the first resist pattern 30, and second metal layers 26a and 26b to be metal bumps are formed by electrolytic plating using the first metal layer 25 as an electrode. Thereafter, the opening 31b is covered with a third resist pattern 32, and a third metal layer 27 is formed on the second metal layer 26a by electrolytic plating to uniform heights of the metal bumps on the n-side electrode and the p-side electrode.

Description

  The present invention relates to a nitride semiconductor light-emitting element mounted on a mounting substrate via metal bumps and a manufacturing technique thereof.

  Nitride semiconductors are generally used in light emitting elements such as light emitting diodes (LEDs) and laser diodes (LD), light receiving elements such as solar cells and optical sensors, and electronic devices such as transistors and power devices. In particular, light emitting diodes (nitride semiconductor light emitting devices) using nitride semiconductors are widely used in various light sources used for backlights, illumination, traffic lights, large displays, and the like.

  As a method of mounting such a nitride semiconductor light emitting device on a mounting substrate, the semiconductor layer of the light emitting device is on the lower side, and the p-side electrode and the n-side electrode of the light emitting device are opposed to the wiring electrodes on the mounting substrate. There is a flip chip type mounting method for connection.

  A nitride semiconductor light emitting device used for a flip chip type mounting method includes an n-type nitride semiconductor layer and a p-type nitride semiconductor layer including an active layer formed on a substrate such as sapphire, and the n-type nitride semiconductor layer And a p-side electrode and an n-side electrode that are respectively connected to the p-type nitride semiconductor layer and formed on the same plane side on the substrate. The n-type nitride semiconductor layer is on the lower side, the p-side electrode and the n-side electrode are opposed to the wiring electrodes on the mounting substrate, and the wiring electrodes are pressed and connected via metal bumps. it can.

  By the way, as a method of forming metal bumps on the nitride semiconductor light emitting device, for example, in Patent Document 1, masking is performed on the p-side electrode and n-side electrode, which are pad electrodes made of a metal film, except for the upper surfaces of both electrodes. A method of forming a resist pattern, laminating a metal bump layer by electroless plating, and then peeling the resist pattern is disclosed.

  As another method, for example, in Patent Document 2, after forming a p-side electrode and an n-side electrode made of a metal film, a metal layer is laminated on the entire surface of the light emitting element, and an opening is formed above both electrodes. After forming the resist pattern, the metal bump layer is formed by electrolytic plating using the metal layer as a seed electrode, and then the resist pattern is peeled off, and the metal layer other than the electrode surface on which the metal bump layer is laminated is removed. A method is disclosed.

  Here, a method for manufacturing a nitride semiconductor light emitting device having metal bumps according to the prior art (for example, Patent Document 2) will be described with reference to FIG. FIG. 12 is a schematic cross-sectional view for explaining a manufacturing process of a semiconductor light emitting device having metal bumps according to the prior art. As shown in FIG. 12, (a) electrode formation on a GaN (gallium nitride) light emitting element wafer, (b) insulating film formation, (c) overall metal layer formation, (d) resist patterning, (e) by electroplating Bump formation, (f) resist removal, (g) metal layer removal, and (h) bonding to the submount member side wafer (not shown), (i) separation into light emitting element units (not shown) Each step is included.

First, a plurality of light emitting element units 121 each including an n-side electrode 103 and a p-side electrode 104 are formed on a wafer 120 on which a GaN-based compound semiconductor is grown on the surface of a sapphire substrate (not shown). The insulating film 122 of SiO ₂ film is formed in addition to the portions where the bumps of the n-side electrode 103 and the p-side electrode 104 are formed (FIG. 12B). .

  Next, a planar metal layer 105 that is electrically connected to the n-side electrode 103 and the p-side electrode 104 over almost the entire surface of the wafer 120 is formed of an Au / Ti alloy (FIG. 12C). The metal layer 105 is formed to a thickness of 0.5 to 3 μm by vapor deposition or sputtering.

  Next, a resist 123 is formed on the metal layer 105 (FIG. 12D), and bumps 106 and 107 are formed on the metal layer 105 by electroplating (FIG. 12E).

  Next, the resist 123 is removed (FIG. 12F), and further, the bump 106 and the p-side electrode electrically connected to the n-side electrode 103 are removed by removing the portion of the metal layer 105 exposed on the surface. Thus, a light emitting element side wafer in which the light emitting element units 121 having bumps 107 electrically connected to 104 are formed in a matrix is obtained (FIG. 12G).

JP 2004-153110 A JP-A-2005-79551

  However, in the method of forming metal bumps using electroless plating as described in Patent Document 1, it is difficult to stably form thick metal bumps. Then, as described in Patent Document 2, it is difficult to form the metal layer 105 so as to be flat by the method of forming the metal layer 105 by vapor deposition, sputtering, or the like.

  For this reason, in both Patent Document 1 and Patent Document 2, it is difficult to align the heights of the metal bumps formed on the p-side electrode and the n-side electrode. Further, when mounting using metal bumps having different heights, the metal bumps on the p-side electrode and the n-side electrode are not evenly applied, and the bonding strength of the metal bumps to the mounting substrate becomes insufficient. there were.

  Therefore, the present invention has been made in view of such problems, and has a nitride semiconductor light-emitting device having a thick metal bump and high reliability, and improved productivity of the nitride semiconductor light-emitting device. It is an object to provide a manufacturing method.

  In order to solve the above-described problem, a method for manufacturing a nitride semiconductor light emitting device according to the first invention includes an n-type nitride semiconductor layer and a p-type nitride semiconductor layer stacked on a substrate, and the same plane of the substrate. Nitride semiconductor light emitting device structure having an n-side electrode connection surface for connecting an n-side electrode to an n-type nitride semiconductor layer and a p-side electrode connection surface for connecting a p-side electrode to a p-type nitride semiconductor layer A body, an n-side electrode connected to the n-side electrode connection surface, a p-side electrode connected to the p-side electrode connection surface, and metal bumps formed on the n-side electrode and the p-side electrode A method for manufacturing a flip-chip nitride semiconductor light emitting device, comprising a protective layer forming step, a first resist pattern forming step, a protective layer etching step, a first metal layer forming step, and a second resist pattern forming step. A second metal layer forming step and a third resist A pattern forming step, and a third metal layer forming step, a resist pattern removal step, but was to be sequentially performed.

  According to this procedure, first, in the protective layer forming step, an insulating protective layer is formed on the nitride semiconductor light emitting element structure. Next, in the first resist pattern forming step, a first resist pattern having openings on the n-side electrode connection surface and the p-side electrode connection surface is formed. Next, in the protective layer etching step, the protective layer is etched using the first resist pattern as a mask. Next, in the first metal layer forming step, without removing the first resist pattern, the n-side electrode and the n-side electrode connection surface and the p-side electrode connection surface exposed from the protective layer on the first resist pattern, A first metal layer to be a p-side electrode is formed. Thereby, the first metal layer is not directly formed on the protective layer other than the portion where the n-side electrode and the p-side electrode are formed. Next, in the second resist pattern forming step, a second resist pattern having openings on the n-side connection surface and the p-side connection surface exposed from the protective layer is formed. At this time, when the opening of the second resist pattern is narrowly formed so as to be inside the opening of the first resist pattern, the second metal layer is formed at the peripheral edge of the upper surface of the n-side electrode and the p-side electrode. Unexposed surfaces can be formed.

  Next, in the second metal layer forming step, the second metal layer constituting the lower part of the metal bump on the n-side electrode and the metal bump on the p-side electrode by electrolytic plating using the first metal layer as an electrode for electrolytic plating. Form. As a result, the n-side electrode and the p-side electrode are directly bonded to the second metal layer constituting the metal bump formed on the upper surface of each electrode. At this time, since the second metal layer having substantially the same thickness as the metal bump is formed on the n-side electrode connection surface and the p-side electrode connection surface, the height of the upper surface of the second metal layer from the substrate Is higher on the second metal layer formed on the p-side electrode connection surface than on the n-side electrode connection surface.

  Next, in the third resist pattern forming step, a third resist pattern that has an opening on the n-side electrode connection surface and covers the second metal layer formed on the p-side electrode connection surface is formed. Then, in the third metal layer forming step, a third metal layer corresponding to the height difference is formed on the second metal layer formed on the n-side electrode connection surface as the upper part of the metal bump on the n-side electrode. Further, it is grown by electrolytic plating. As a result, the height of the metal bump formed on the n-side electrode connection surface from the substrate is the same as the height of the metal bump formed on the p-side electrode connection surface from the substrate.

  Finally, in the resist pattern removing step, the first resist pattern, the second resist pattern, and the third resist pattern are removed. In this manner, a nitride semiconductor light emitting device having a uniform height from the substrate on the upper surface of the metal bump on the n-side electrode and the upper surface of the metal bump on the p-side electrode is manufactured. Further, the outer edge of the upper end of the third metal layer formed on the n-side electrode in the third metal layer forming step and the upper edge of the second metal layer formed on the p-side electrode in the second metal layer forming step. When the outer edge is rounded, the upper edge of the metal bump on the n-side electrode and the p-side electrode is different from the case of adjusting the height by cutting or polishing the upper part of the metal bump. The roundness is preserved.

  The method for manufacturing a nitride semiconductor light emitting device according to the second invention includes an n-type nitride semiconductor layer and a p-type nitride semiconductor layer stacked on a substrate, and an n-type nitride semiconductor on the same plane side of the substrate. A nitride semiconductor light emitting device structure having an n-side electrode connection surface connecting the n-side electrode to the layer and a p-side electrode connection surface connecting the p-side electrode to the p-type nitride semiconductor layer, and an n-side electrode connection Flip-chip type nitride semiconductor having an n-side electrode connected to the surface, a p-side electrode connected to the p-side electrode connection surface, and metal bumps formed on the n-side electrode and the p-side electrode A method for manufacturing a light emitting device, comprising: a protective layer forming step, a first resist pattern forming step, a protective layer etching step, a first metal layer forming step, a second resist pattern forming step, and a second metal layer forming. Step and second resist pattern opening forming step A third metal layer forming step, a resist pattern removal step, but was to be sequentially performed.

  According to this procedure, first, in the protective layer forming step, an insulating protective layer is formed on the nitride semiconductor light emitting element structure. Next, in the first resist pattern forming step, a first resist pattern having openings on the n-side electrode connection surface and the p-side electrode connection surface is formed. Next, in the protective layer etching step, the protective layer is etched using the first resist pattern as a mask. Next, in the first metal layer forming step, without removing the first resist pattern, the n-side electrode and the n-side electrode connection surface on the first resist pattern, the n-side electrode connection surface exposed from the protective layer, and the p-side electrode connection surface A first metal layer to be a p-side electrode is formed. Thereby, the first metal layer is not directly formed on the protective layer other than the portion where the n-side electrode and the p-side electrode are formed.

  Next, in the second resist pattern forming step, a second resist pattern having an opening on the n-side electrode connection surface is formed. At this time, when the opening of the second resist pattern is narrowly formed so as to be inside the opening of the first resist pattern, an exposed surface on which the second metal layer is not formed is formed on the peripheral edge of the upper surface of the n-side electrode. Can be formed. Next, in the second metal layer forming step, the second metal layer constituting the lower portion of the metal bump on the n-side electrode is formed by electrolytic plating using the first metal layer on the n-side electrode connecting surface as an electrode for electrolytic plating. To do. At this time, the thickness of the formed second metal layer is the same as the difference in height from the substrate between the n-side electrode connection surface and the p-side electrode connection surface.

  Next, in the second resist pattern opening forming step, a second resist pattern having an opening on the p-side electrode connection surface is formed. As a result, a second resist pattern having openings on the n-side electrode connection surface and the p-side electrode connection surface is formed. At this time, when the opening of the second resist pattern is narrowly formed so as to be inside the opening of the first resist pattern, an exposed surface on which the second metal layer is not formed is formed on the peripheral edge of the upper surface of the p-side electrode. Can be formed. Next, in the third metal layer forming step, the second metal layer formed on the n-side electrode connection surface and the first metal layer on the p-side electrode connection surface are used as electrodes for electrolytic plating, respectively, and the n-side is formed by electrolytic plating. A third metal layer constituting the upper portion of the metal bump on the electrode and the metal bump on the p-side electrode is formed with the same thickness on the n-side electrode connection surface and the p-side electrode connection surface. As a result, the height of the upper surface of the third metal layer formed on the n-side electrode connection surface from the substrate coincides with the height of the upper surface of the third metal layer formed on the p-side electrode connection surface. To do.

  Finally, in the resist pattern removing step, the first resist pattern and the second resist pattern are removed. In this manner, a nitride semiconductor light emitting device having a uniform height from the substrate on the upper surface of the metal bump on the n-side electrode and the upper surface of the metal bump on the p-side electrode is manufactured. Also, when the outer edge of the upper end of the third metal layer formed in the third metal layer forming step is rounded, n is different from the case of adjusting the height by cutting or polishing the upper part of the metal bump. The roundness is preserved at the outer edge of the upper end of the metal bump on the side electrode and the p-side electrode.

  A nitride semiconductor light emitting device according to a third invention includes an n-type nitride semiconductor layer and a p-type nitride semiconductor layer laminated on a substrate, a p-side electrode provided on the p-type nitride semiconductor layer, A flip-chip type having an n-side electrode provided on the n-type nitride semiconductor layer on the same plane side of the p-side electrode and the substrate, and metal bumps provided on the n-side electrode and the p-side electrode In the nitride semiconductor light emitting device, the height of the upper surface of the metal bump formed on the n-side electrode from the substrate is the same as the height of the upper surface of the metal bump formed on the p-side electrode from the substrate. The metal bumps formed on the n-side electrode were configured such that the area on the upper surface side was smaller than the area on the bottom surface side in plan view.

  According to such a configuration, the nitride semiconductor light emitting device includes the height of the upper surface of the metal bump formed on the n-side electrode from the substrate and the height of the upper surface of the metal bump formed on the p-side electrode from the substrate. Therefore, during flip chip mounting, these metal bumps are equally pressed from the substrate side. Furthermore, since the metal bump formed on the n-side electrode has a small area on the upper surface side in plan view, when the metal bump is crushed by the pressing force of flip chip mounting, the upper end of the metal bump is It is possible to suppress spreading in the lateral direction more than necessary.

  A nitride semiconductor light emitting device according to a fourth invention includes an n-type nitride semiconductor layer and a p-type nitride semiconductor layer stacked on a substrate, a p-side electrode provided on the p-type nitride semiconductor layer, A flip-chip type having an n-side electrode provided on the n-type nitride semiconductor layer on the same plane side of the p-side electrode and the substrate, and metal bumps provided on the n-side electrode and the p-side electrode In the nitride semiconductor light emitting device, the height of the upper surface of the metal bump formed on the n-side electrode from the substrate is the same as the height of the upper surface of the metal bump formed on the p-side electrode from the substrate. The metal bumps formed on the n-side electrode were configured such that the area on the bottom surface side was smaller than the area on the top surface side in plan view.

  According to such a configuration, the nitride semiconductor light emitting device includes the height of the upper surface of the metal bump formed on the n-side electrode from the substrate and the height of the upper surface of the metal bump formed on the p-side electrode from the substrate. Therefore, during flip chip mounting, these metal bumps are equally pressed from the substrate side. Further, since the metal bump formed on the n-side electrode has a small area on the n-side electrode side in plan view, the areas of the active layer and the p-type nitride semiconductor layer contributing to light emission can be increased.

  In the nitride semiconductor light emitting device according to the fifth invention, at least one of the n-side electrode and the p-side electrode has a bottom surface of the metal bump formed on the n-side electrode and a metal bump on the p-side electrode, respectively, in plan view. You may comprise so that it may become wider than the bottom face.

  According to such a configuration, the metal bumps of the nitride semiconductor light emitting device are crushed and spread in the lateral direction when the nitride semiconductor light emitting device is pressed and brought into contact with the wiring electrodes of the mounting substrate via the metal bumps. . At this time, since at least one of the n-side electrode and the p-side electrode provided with the metal bump is configured to be wider than the bottom surface of the metal bump in plan view, the metal bump is configured to be widely configured in plan view. Spreads on top or p-side electrode.

  A nitride semiconductor light emitting device according to a sixth invention has an insulating protective layer covering the surface of the nitride semiconductor light emitting device, and the upper surfaces of the n-side electrode and the p-side electrode are exposed from the protective layer. You may comprise.

  According to such a configuration, the exposed upper surface where the metal bumps of the n-side electrode and the p-side electrode are not provided is not covered with the protective layer, so that when flip-chip mounting is performed, the upper surface of the electrode spreads laterally. The metal bumps are in electrical contact with each other, the bonding area between the n-side electrode and p-side electrode and the metal bump is increased, and the contact resistance between the n-side electrode and p-side electrode and the metal bump is lowered.

  In the nitride semiconductor light emitting device according to the seventh invention, at least one of the metal bump formed on the n-side electrode or the metal bump formed on the p-side electrode has a rounded outer edge at the upper end. You may comprise as follows.

  According to such a configuration, since the outer edge portion of the upper end of the metal bump is rounded, the area of the upper surface is reduced. For this reason, when flip-chip mounting is performed, the metal bump comes into contact with the wiring electrode of the mounting substrate on the upper surface having a small area and receives a pressing force from the substrate side. At this time, it is possible to suppress the upper end portion of the metal bump from spreading in the lateral direction more than necessary.

  According to the manufacturing method of the present invention, the heights of the upper surface of the metal bump on the n-side electrode and the upper surface of the metal bump on the p-side electrode are made uniform from the substrate side. When a pressing force is applied, a uniform pressing force is applied to both the metal bumps, and a nitride semiconductor light emitting device that can be satisfactorily connected without applying a pressing force more than necessary can be manufactured. Furthermore, in order to adjust the height of the metal bumps, instead of cutting the upper part of the higher metal bumps, a metal layer corresponding to the height difference is grown on the lower metal bumps. The nitride semiconductor light emitting device can be manufactured at low cost.

  The nitride semiconductor light emitting device of the present invention has a height from the substrate of the upper surface of the metal bump formed on the n-side electrode and a height from the substrate of the upper surface of the metal bump formed on the p-side electrode. When flip-chip mounting is applied, both metal bumps are equally pressed when subjected to a pressing force when flip-chip mounting, and an excessive pressing force is applied to the nitride semiconductor light emitting device. Can be connected well. Further, in plan view, when the area on the upper surface side of the metal bump on the n-side electrode is reduced, the area of the wiring electrode on the mounting board can be reduced, so that the degree of freedom in the wiring design of the mounting board can be increased. . Furthermore, when the area on the n-side electrode side of the metal bump formed on the n-side electrode is reduced, the area of the p-type nitride semiconductor layer contributing to light emission can be increased. More light can be extracted from the light emitting element.

It is a schematic diagram which shows the structure of the nitride semiconductor light-emitting device in 1st Embodiment of this invention, (a) is a top view, (b) is sectional drawing in the AA of (a). It is a flowchart which shows the flow of the manufacturing method of the nitride semiconductor light-emitting device in 1st Embodiment of this invention. It is typical sectional drawing for demonstrating a part of manufacturing process of the nitride semiconductor light-emitting device in 1st Embodiment of this invention, (a) is a mode that the nitride semiconductor light-emitting device structure was formed, (b). Shows a state of forming a protective layer, and (c) shows a state of forming a first resist pattern for forming an electrode. It is typical sectional drawing for demonstrating a part of manufacturing process of the nitride semiconductor light-emitting device in 1st Embodiment of this invention, (a) is a mode that the protective layer of the electrode connection part was removed, (b) is A state in which the first metal layer is formed and (c) shows a state in which an opening is formed in the second resist pattern. It is typical sectional drawing for demonstrating a part of manufacturing process of the nitride semiconductor light-emitting device in 1st Embodiment of this invention, (a) is a mode that the 2nd metal layer was formed, (b) is 3rd. A state in which an opening is formed in the resist pattern and a state in which (c) a third metal layer is formed are shown. It is typical sectional drawing for demonstrating a part of manufacturing process of the nitride semiconductor light-emitting device in 1st Embodiment of this invention, and shows a mode that the 1st resist pattern thru | or the 3rd resist pattern were removed. It is typical sectional drawing for demonstrating a mode that the upper part of a metal bump is formed in the manufacturing process of the nitride semiconductor light-emitting device in 1st Embodiment of this invention, (a) is a mode that the 3rd resist pattern was apply | coated. , (B) is a state where an opening is formed in the third resist pattern, (c) is a state where a third metal layer is formed, and (d) is a state where the second resist pattern and the third resist pattern are removed. Show. It is a schematic diagram which shows the structure of the nitride semiconductor light-emitting device in 2nd Embodiment of this invention, (a) is a top view, (b) is sectional drawing in the AA of (a). It is typical sectional drawing for demonstrating a mode that the upper part of a metal bump is formed in the manufacturing process of the nitride semiconductor light-emitting device in 2nd Embodiment of this invention, (a) is a mode that the 3rd resist pattern was exposed. (B) shows a state where the third resist pattern is developed, (c) shows a state where the third metal layer is formed, and (d) shows a state where the second resist pattern and the third resist pattern are removed. It is a schematic diagram which shows the structure of the nitride semiconductor light-emitting device in 3rd Embodiment of this invention, (a) is a top view, (b) is sectional drawing in the AA of (a). It is a flowchart which shows the flow of the manufacturing method of the nitride semiconductor light-emitting device in 3rd Embodiment of this invention. It is typical sectional drawing for demonstrating a part of manufacturing process of the nitride semiconductor light-emitting device in 3rd Embodiment of this invention, (a) is a mode that the opening part was formed in the 2nd resist pattern, (b) Shows a state where the second metal layer is formed, and (c) shows a state where an opening is additionally formed in the second resist pattern. It is typical sectional drawing for demonstrating a part of manufacturing process of the nitride semiconductor light-emitting device in 3rd Embodiment of this invention, (a) is a mode that the 3rd metal layer was formed, (b) is 1st. The state where the resist pattern and the second resist pattern are removed is shown. It is typical sectional drawing for demonstrating a mode that the upper part of a metal bump is formed in the manufacturing process of the nitride semiconductor light-emitting device in 3rd Embodiment of this invention, (a) is a mode that the 2nd metal layer was formed. (B) shows how the third resist pattern is double-exposed and developed, (c) shows how the third metal layer is formed, and (d) shows how the second resist pattern is removed. It is typical sectional drawing for demonstrating a mode that the nitride semiconductor light-emitting device in 1st Embodiment of this invention and 3rd Embodiment is mounted, (a) is 1st Embodiment, (b) is 3rd Embodiment. The state of implementation of the form is shown. It is typical sectional drawing for demonstrating the manufacturing process of the semiconductor light-emitting device which has a metal bump by a prior art.

  Hereinafter, a nitride semiconductor light emitting device and a method for manufacturing the nitride semiconductor light emitting device in the present invention will be described.

<First Embodiment>
[Nitride semiconductor light emitting device]
The structure of the nitride semiconductor light emitting device in the first embodiment of the present invention will be described with reference to FIG. The nitride semiconductor light emitting device 1 according to the first embodiment of the present invention is a flip chip type LED, and includes a substrate 2, a nitride semiconductor light emitting device structure 10 stacked on the substrate 2, and a protection. At least a layer 20, an n-side electrode 21, a p-side electrode 22, a metal bump 23, and a metal bump 24 are provided.

  In this specification, the “nitride semiconductor light emitting device structure” refers to a stacked structure in which an n-type nitride semiconductor layer 11 including an active layer 12 and a p-type nitride semiconductor layer 13 are stacked. The nitride semiconductor light emitting device structure 10 includes an n-side electrode connection surface 10a for electrically connecting the n-side electrode 21 to the n-type nitride semiconductor layer 11 on the same plane side of the substrate 2, and a p-side. It has a p-side electrode connection surface 10b for electrically connecting the electrode 22 to the p-type nitride semiconductor layer 13, and has a preferable structure for manufacturing the flip-chip nitride semiconductor light emitting device 1. is there. Further, in this specification, “upper” means a direction perpendicular to the surface of the substrate 2 on which the nitride semiconductor light emitting element structures 10 are stacked, and the direction in which the nitride semiconductor light emitting element structures 10 are stacked. And For example, in FIG.1 (b), the upper direction of a figure is pointed out.

(substrate)
The substrate 2 may be formed of a substrate material capable of epitaxially growing a nitride semiconductor, and the size, thickness, and the like are not particularly limited. As such a substrate material, an insulating substrate such as sapphire or spinel (MgA1 ₂ O ₄ ) whose main surface is any one of C-plane, R-plane, and A-plane, silicon carbide (SiC), silicon, ZnS ZnO, Si, GaAs, diamond, and oxide substrates such as lithium niobate and neodymium gallate that are lattice-bonded to nitride semiconductors. In addition, since the nitride semiconductor light emitting device 1 in the present embodiment is flip-chip mounted, the back surface of the substrate 2 is a light extraction surface. Therefore, since the light emitted from the nitride semiconductor light emitting device 1 passes through the substrate 2 and is emitted from the light extraction surface, the substrate 2 is preferably at least transparent to the wavelength of this light.

(Nitride semiconductor light emitting device structure)
As described above, the nitride semiconductor light emitting device structure 10 is a stacked structure in which the n-type nitride semiconductor layer 11 including the active layer 12 and the p-type nitride semiconductor layer 13 are stacked. In this embodiment, the nitride semiconductor light emitting device structure 10 includes a full-surface electrode 14 and a cover electrode 15 stacked on a p-type nitride semiconductor layer 13, and an n-side electrode 21 on the same plane side of the substrate 2. The n-side electrode connection surface 10a, which is the upper surface of the n-type nitride semiconductor layer 11 for electrically connecting to the n-type nitride semiconductor layer 11, and the p-side electrode 22 are electrically connected to the p-type nitride semiconductor layer 13. And a p-side electrode connection surface 10b which is an upper surface of the cover electrode 15 for connection.

(Full-surface electrode, cover electrode)
The full-surface electrode 14 is provided on the p-type nitride semiconductor layer 13 so as to cover substantially the entire surface of the p-type nitride semiconductor layer 13, and a current supplied via the p-side electrode 22 and the cover electrode 15 is supplied to the p-type nitride semiconductor layer 13. This is an electrode for uniformly diffusing the entire surface of the type nitride semiconductor layer 13. In addition, the nitride semiconductor light emitting device 1 according to the present embodiment that is flip-chip mounted also has a function as a reflective layer for reflecting the light emitted from the active layer 12 to the back side of the substrate 2 that is a light extraction surface. .

  The full-surface electrode 14 is preferably an ohmic electrode that can be electrically connected to the p-type nitride semiconductor layer 13 and has a good reflectance with respect to at least the wavelength of light emitted from the active layer 12. It is preferable. Therefore, as the full-surface electrode 14, it is possible to suitably use a single layer film of Ag having a high light reflectance and a multilayer film of Ni, Ti, etc. with Ag as the lowermost layer. More preferably, an Ag / Ni / Ti / Pt multilayer film with Ag as the lowermost layer (p-type nitride semiconductor layer 13 side) can be used, and each multilayer film has a thickness of about 1000 nm, for example. can do. The full-surface electrode 14 can be formed by sequentially laminating these materials, for example, by sputtering or vapor deposition.

  The cover electrode 15 covers the upper surface and side surfaces of the full-surface electrode 14, shields the p-side electrode 22 from the full-surface electrode 14, and functions as a barrier layer for preventing migration of the constituent material of the full-surface electrode 14, particularly Ag.

  As the cover electrode 15, for example, a single layer film of a metal such as Ti, Au, or W or a multilayer film of these metals can be used. Preferably, a multilayer film of Ti (lowermost layer) / Au / W / Ti with Ti as the lowermost layer (entire electrode 14 side) can be used, and the thickness of this multilayer film is 2 nm from the lower layer side, for example. It can be set to 1700 nm, 120 nm, and 3 nm.

  In the present embodiment, the full-surface electrode 14 and the cover electrode 15 are provided only on the p-type nitride semiconductor layer 13, but the full-surface electrode 14 and the cover electrode 15 are also provided on the n-type nitride semiconductor layer 11. You may do it. In this case, the n-side electrode connection surface 10 a is not the upper surface of the n-type nitride semiconductor layer 11 but the upper surface of the cover electrode 15.

(N-side electrode, p-side electrode)
The n-side electrode 21 is electrically connected to the n-type nitride semiconductor layer 11, and the p-side electrode 22 is electrically connected to the p-type nitride semiconductor layer 13 via the cover electrode 15 and the entire surface electrode 14. It is a pad electrode for supplying current to the element 1 from the outside. The n-side electrode 21 is provided in the n-side electrode connection surface 10 a that is the upper surface of the n-type nitride semiconductor layer 11 of the nitride semiconductor light emitting element structure 10. The p-side electrode 22 is provided in the p-side electrode connection surface 10 b that is the upper surface of the cover electrode 15 of the nitride semiconductor light emitting element structure 10. Metal bumps 23 and metal bumps 24 are provided on the upper surfaces of the n-side electrode 21 and the p-side electrode 22, respectively.

  The n-side electrode 21 and the p-side electrode 22 are preferably made of a material having low electric resistance, and a single layer or a multilayer film of metals such as Au, Cu, Ni, Al, and Pt, or alloys thereof can be used. The n-side electrode 21 and the p-side electrode 22 can be, for example, a multilayer film having a Cu single layer or Cu / Ni laminated film as a lower layer and Au or AuSn alloy as an upper layer.

  In order to obtain good electrical contact between the n-side electrode 21 and the n-type nitride semiconductor layer 11, the lowermost layer of the n-side electrode 21 is preferably made of Ti, Al, AlCuSi alloy, etc. As the lower layer, a multilayer film such as Ti / Au, Al / Ti / Au, Al / Ti / Pt / Au, Ti / Pt / Au, AlCuSi / Ti / Pt / Au can be used. Further, when an AlCuSi alloy is used as the lowermost layer and a multilayer film of AlCuSi / Ti / Pt / Au is used, the thickness of each layer can be set to, for example, 500 nm, 150 nm, 50 nm, and 700 nm, respectively.

(Metal bump)
The metal bump 23 and the metal bump 24 are the upper surfaces of the n-side electrode 21 and the p-side electrode 22, respectively, and are disposed on the respective portions of the n-side electrode 21 and the p-side electrode 22 except for the peripheral portion 21 a and the peripheral portion 22 a. It is provided in contact. That is, as shown in FIG. 1A, in a plan view (a top view), the n-side electrode 21 and the p-side electrode 22 are more than the bottom surfaces of the metal bumps 23 and the metal bumps 24 provided on the respective electrodes. It is getting wider. The metal bump 23 and the metal bump 24 are electrode connection layers for electrically connecting the n-side electrode 21 and the p-side electrode 22 of the nitride semiconductor light emitting element 1 and a wiring electrode (not shown) of the mounting substrate. . That is, when the nitride semiconductor light emitting element 1 is flip-chip mounted on the mounting substrate, the n-side electrode 21 and the p-side electrode 22 face the wiring electrodes (not shown) on the mounting substrate, and the metal bump 23 and the metal bump 24 is brought into pressure contact with the wiring electrode to electrically connect the n-side electrode 21 and the p-side electrode 22 to the wiring electrode (not shown) of the mounting substrate.

  As described above, the n-side electrode 21 and the p-side electrode 22 which are pad electrodes in plan view are configured to be wider than the bottom surfaces of the metal bump 23 and the metal bump 24, respectively. This is because when the nitride semiconductor light-emitting element 1 is bonded to the wiring electrode of the mounting substrate through the metal bump 23 and the metal bump 24 and bonded, the metal bump 23 and the metal bump 24 are crushed in the lateral direction. This is to prevent the n-side electrode 21 and the p-side electrode 22 that are pad electrodes from protruding outside. That is, when the crushed metal bump 23 and the metal bump 24 protrude from the n-side electrode 21 and the p-side electrode 22, the bonding strength is reduced, but this is prevented.

  Further, the peripheral portion 21 a of the n-side electrode 21 and the peripheral portion 22 a of the p-side electrode 22 are not covered with the protective layer 20 and are exposed. Thus, when the nitride semiconductor light emitting element 1 is bonded to the wiring electrode of the mounting substrate through the metal bump 23 and the metal bump 24 and bonded, the metal bump 23 and the metal bump 24 are crushed and laterally The metal bump 23 and the metal bump 24 spreading in the lateral direction are in electrical contact with the peripheral portion 21a of the n-side electrode 21 and the peripheral portion 22a of the p-side electrode 22 which are pad electrodes, respectively. For this reason, the electrical contact area between the n-side electrode 21 and the p-side electrode 22 and the metal bump 23 and the metal bump 24, respectively, can be increased, and the contact resistance between them can be lowered.

  The metal bump 23 and the metal bump 24 are rounded at the outer edge at the upper end. That is, the center part of the upper end of the metal bump 23 and the metal bump 24 is flat, and the corners of the upper end are rounded. This rounded shape is a shape in which, when the metal bump 23 and the metal bump 24 are formed by an electrolytic plating method, the outer edge at the upper end, which is a growth end, is rounded in the electrolytic plating process.

  Further, the metal bump 23 on the n-side electrode 21 has a lower portion 23a that is thick and an upper portion 23b that is thin. The height of the upper surface of the metal bump 23 (that is, the upper surface of the upper portion 23b) from the substrate 2 and the height of the upper surface of the metal bump 24 on the p-side electrode 22 from the substrate 2 are the same. As a result, during the flip chip mounting, the metal bumps 23 and the metal bumps 24 are evenly pressed from the substrate 2 side.

  In the present specification, the “height from the substrate” refers to the height from the back surface of the substrate 2 that applies a pressing force to the nitride semiconductor light emitting element 1 during flip chip mounting. Moreover, when the uneven | corrugated shape is provided in the back surface of the board | substrate 2, it shall mean the height from the lowest surface (the surface which becomes the lowest in FIG.1 (b)) of the board | substrate 2. FIG.

  Further, in this specification, “the same height” of the metal bumps 23 and 24 is not limited to a case where the metal bumps 23 and 24 are completely coincident with each other. In flip-chip mounting, the metal bumps 23 and 24 are in the same plane. It is assumed that the metal bumps 23 and 24 receive a pressing force substantially evenly when they are connected to the wiring electrodes on the mounted substrate. For example, when the thickness of the metal bump 23 is 20 μm, the difference between the height of the upper surface of the metal bump 23 from the substrate 2 and the height of the upper surface of the metal bump 24 from the substrate is within a range of about 1.5 μm. If so, it can be regarded as “the same height”.

  Further, the metal bump 23 on the n-side electrode 21 has an area on the upper surface side (that is, an area of the upper surface of the upper portion 23b) smaller than an area on the bottom surface side (that is, the area of the lower surface of the lower portion 23a) in plan view. Thereby, in flip chip mounting, when the metal bump 23 is crushed by receiving a pressing force, it is possible to prevent the upper end portion of the metal bump 23 from spreading laterally more than necessary.

  The metal bumps 23 and the metal bumps 24 in the present embodiment are formed by electrolytic plating using the n-side electrode 21 and the p-side electrode 22 as seed electrodes. The metal bump 23 and the metal bump 24 are not particularly limited as long as they have low electric resistance and can be formed by electrolytic plating, and a single layer film such as Au, Cu, Ni, or a multilayer film thereof can be used. Au is preferable because it has low electric resistance and low contact resistance, but an AuSn alloy that is an inexpensive alloy with Sn can be used. As a composition of this AuSn alloy, for example, Au can be 80% and Sn can be 20%.

Moreover, the uppermost layer of the metal bump 23 and the metal bump 24 can be selected according to the compatibility of the bonding property with the wiring electrode material of the mounting substrate. At this time, when the uppermost layer of the metal bump 23 and the metal bump 24 and the uppermost layer of the wiring electrode of the mounting substrate are both Au, the upper surfaces of the metal bump 23 and the metal bump 24 are subjected to CMP in order to obtain good bondability. It is preferable to polish and flatten by (chemical-mechanical polishing) or the like so as to reduce the gap on the joint surface with the wiring electrode as much as possible. Note that the uppermost layer of the metal bump 23 and the metal bump 24 is made of, for example, the AuSn alloy described above, so that the flatness condition necessary for securing the bondability can be set more than when Au is used for the uppermost layer. Can be relaxed.
In flip-chip mounting, the total film thickness of the metal bumps 23 and the metal bumps 24 is preferably set to 10 μm or more in order to achieve mounting with few connection failures, that is, high reliability.

(Protective layer)
The protective layer 20 is an insulating film that covers the exposed surface (upper surface and side surface) of the nitride semiconductor light emitting element structure 10, and functions as a protective film and an antistatic film for the nitride semiconductor light emitting element 1. The protective layer 20 can use insulating oxides such as Si, Ti, and Ta, and can be formed by a known method such as vapor deposition or sputtering. The thickness of the protective layer 20 is preferably 100 nm or more. For example, SiO ₂ having a thickness of about 350 nm can be used. The protective layer 20 does not cover the peripheral surfaces 21a and 22a, which are the exposed upper surfaces of the n-side electrode 21 and the p-side electrode 22, and the upper surfaces and side surfaces of the metal bumps 23 and 24.

[Operation of nitride semiconductor light emitting device]
The nitride semiconductor light emitting device 1 according to the first embodiment of the present invention shown in FIG. 1 has wiring on a mounting substrate connected to an n-side electrode 21 and a p-side electrode 22 via a metal bump 23 and a metal bump 24, respectively. When a current is supplied through an electrode (not shown), the active layer 12 of the nitride semiconductor light emitting device structure 10 emits light. The light emitted from the active layer 12 is extracted from the back side of the substrate 2. Of the light emitted from the active layer 12, the light traveling to the front surface side of the substrate 2 is reflected by the full-surface electrode 14 functioning as a reflective layer and extracted from the back surface side of the substrate 2, which is a light extraction surface.

[Manufacturing method of nitride semiconductor light emitting device]
A method for manufacturing a nitride semiconductor light emitting device according to the first embodiment of the present invention will be described with reference to FIG.

  As shown in FIG. 2, the nitride semiconductor light emitting device manufacturing method according to the first embodiment includes a nitride semiconductor light emitting device structure forming step S10, a protective layer forming step S11, a first resist pattern forming step S12, Protective layer etching step S13, first metal layer forming step S14, second resist pattern forming step S15, second metal layer forming step S16, metal bump layer height adjusting step S17, resist pattern removing step S18, And chip dividing step S19.

  Hereinafter, each step will be described in detail with reference to FIGS. 3A to 3D (see FIGS. 1 and 2 as appropriate). 3A to 3D, the description of the substrate 2 is omitted. Further, the shapes of the second metal layer 26a and the third metal layer 27 which become the lower portion 23a and the upper portion 23b of the metal bump 23 are simplified and shown with the same thickness.

(Nitride semiconductor light emitting device structure forming step: S10)
First, as shown in FIG. 3A (a), the nitride semiconductor light emitting element structure 10 is formed on the substrate 2.
The formation process of the nitride semiconductor light emitting element structure 10 will be specifically described. First, an n-type nitride semiconductor layer is formed on the substrate 2 made of sapphire or the like by using the MOVPE method (metal organic vapor phase epitaxy). 11. Each nitride semiconductor constituting the active layer 12 and the p-type nitride semiconductor layer 13 is grown. Thereafter, the substrate 2 on which each nitride semiconductor layer is grown (hereinafter referred to as a wafer as appropriate) is annealed at about 600 to 700 ° C. in a nitrogen atmosphere to reduce the resistance of the p-type nitride semiconductor layer 13. Is preferred.

  Next, a part of the n-type nitride semiconductor layer 11 is exposed as the n-side electrode connection surface 10a for connecting the n-side electrode 21. A mask having a predetermined shape is formed with a photoresist on the annealed wafer, and p-type nitride semiconductor layer 13 and active layer 12 and n-type nitride semiconductor layer 11 are further formed by RIE (reactive ion etching). The n-type nitride semiconductor layer 11 is exposed by removing a part of the n-type nitride semiconductor layer 11. After the etching, the resist is removed. In the present embodiment, the exposed surface of the n-type nitride semiconductor layer 11 is the n-side electrode connection surface 10a.

Next, a multilayer film formed by sequentially laminating, for example, Ag / Ni / Ti / Pt, for example, as the full-surface electrode 14 is formed on the entire surface of the wafer by sputtering. Then, a whole surface electrode 14 having a predetermined shape is formed by photolithography. Thereafter, as the cover electrode 15, for example, a multilayer film formed by sequentially stacking Ti / Au / W / Ti is formed by sputtering. Then, a cover electrode 15 having a predetermined shape that shields the entire surface electrode 14 is formed by photolithography. In the present embodiment, the upper surface of the cover electrode 15 is the p-side electrode connection surface 10b.
Thus, the nitride semiconductor light emitting element structure 10 is formed.

  A plurality of nitride semiconductor light emitting element structures 10 are formed in a matrix on the substrate 2, and the nitride semiconductor light emitting element 1 is divided into chips after completion on the substrate 2. In the example shown in FIG. 3A (a), two n-side electrode connection surfaces 10a are shown, but one belongs to the adjacent nitride semiconductor light emitting element structure 10.

(Protective layer forming step: S11)
Next, as shown in FIG. 3A (b), the entire surface of the nitride semiconductor light emitting device structure 10 formed in the previous step is laminated with insulating SiO ₂ or the like by sputtering, for example, to form a protective layer 20. Form.

(First resist pattern forming step: S12)
Next, as shown in FIG. 3A (c), a first resist having an opening 30a and an opening 30b in the region where the n-side electrode 21 and the p-side electrode 22 are formed by photolithography, respectively. A pattern 30 is formed.

(Protective layer etching step: S13)
Next, as shown in FIG. 3B (a), using the first resist pattern 30 as a mask, the protective layer 20 of the opening 30a and the opening 30b is removed by etching, and the n-type nitride semiconductor layer 11 and the cover electrode are respectively removed. 15 is exposed.

(First metal layer (pad electrode layer) forming step: S14)
Next, as shown in FIG. 3B (b), a single-layer film such as Au or Cu or a multilayer film such as AlCuSi / Ti / Pt / Au is formed by sputtering or the like on the n-side electrode 21 and the p-side. The first metal layer (pad electrode layer) 25 to be the electrode 22 is formed. At this time, it is preferable to form a multilayer film or a single-layer film having Al as the lowermost layer having a high reflectance with respect to the wavelength of light emitted from the active layer 12. The first metal layer 25 is formed not only on the formation region of the n-side electrode 21 and the p-side electrode 22, but also on the first resist pattern 30, and the entire surface of the first metal layer 25 is electrically conductive. ing.

  In this embodiment, since the first metal layer 25 to be the n-side electrode 21 and the p-side electrode 22 that are pad electrodes is formed after the protective layer 20 is formed, the upper surfaces of the n-side electrode 21 and the p-side electrode 22 are It is not covered with the protective layer 20. The first metal layer 25 is formed through the first resist pattern 30 except for the portions where the n-side electrode 21 and the p-side electrode 22 are formed, and the first metal layer 25 is directly formed on the protective layer 20. Not. For this reason, after the first resist pattern 30 is removed in a subsequent process, the metal film remains on the protective layer 20 and does not cause a leak.

(Second resist pattern forming step: S15)
Next, as shown in FIG. 3B (c), the openings 31a and the openings are formed on the openings 30a and 30b of the first resist pattern 30 by photolithography without removing the first resist pattern. A second resist pattern 31 having 31b is formed. Since the second resist pattern 31 is used to form the metal bumps 23 and the metal bumps 24 by electrolytic plating, the film thickness of the second resist pattern 31 is the film of the metal bumps 23 and the metal bumps 24. It is formed thicker than the thickness. The thickness of the second resist pattern 31 can be, for example, about 20 μm.

  In the present embodiment, the second resist pattern 31 is formed using a negative resist. For this reason, the mask 40 for exposure is configured to shield light from the portions to be the openings 31a and 31b of the second resist pattern. The negative resist exposed using the mask 40 is removed by the development to remove the opening 31a and the opening 31b which are unexposed portions.

  In the present embodiment, the first resist pattern 30 is not removed when the second resist pattern 31 is formed. As a result, the first metal layer 25 remains while the entire surface including the first metal layer 25 to be the n-side electrode 21 and the first metal layer 25 to be the p-side electrode 22 is electrically connected. Therefore, the first metal layer 25 is used to form the second metal layer 26a constituting the lower portion 23a of the metal bump 23 and the second metal layer 26b constituting the metal bump 24 in the second metal layer forming step S16. It can be used as a seed electrode for electrolytic plating.

  When the heights of both the metal bump 23 and the metal bump 24 are cut or polished so that the heights of both are uniform, the second metal layer 26a and the second metal layer 26b are formed in consideration of various variations in the manufacturing process. It is necessary to form a thickness of about 40 μm (see FIG. 3C (a)). Therefore, the thickness of the second resist pattern 31 needs to be about 40 μm or more.

  On the other hand, in the present embodiment, this corresponds to the difference between the height of the upper surface of the metal bump 23 of the second metal layer 26 a and the second metal layer 26 b from the substrate 2 and the height of the metal bump 24 from the substrate 2. In order to form the metal layer by electrolytic plating (see FIG. 3C (c)), it is necessary to form the second metal layer 26a and the second metal layer 26b at a thickness greater than the thickness of the metal bump 23 and the metal bump 24 to be manufactured. There is no.

(Second metal layer forming step: S16)
Next, as shown in FIG. 3C (a), by performing electrolytic plating using the first metal layer 25 exposed from the second resist pattern 31 in the opening 31a and the opening 31b as a seed electrode, the metal bumps 23 are formed. A second metal layer 26 a constituting the lower portion 23 a and a second metal layer 26 b constituting the metal bump 24 are formed.

  As a result, the first metal layer 25 formed in the opening 31 a to be the n-side electrode 21 and the second metal layer 26 a constituting the lower portion 23 a of the metal bump 23 are directly joined, and the opening to be the p-side electrode 22. The first metal layer 25 formed on 31b and the second metal layer 26b constituting the metal bump 24 are directly bonded.

  At this time, since the second metal layer 26a formed in the opening 31a and the second metal layer 26b formed in the opening 31b are formed at the same height, the second metal layer 26a formed in the opening 31a. The upper surface of the second metal layer 26b formed in the opening 31b is higher than the upper surface of the metal layer 26a.

  Here, the opening 31a and the opening 31b of the second resist pattern 31 are narrow openings that open inside the opening 30a and the opening 30b of the first resist pattern 30, respectively. Thereby, the second metal layer 26a and the second metal layer 26b are not formed in the portion where the second resist pattern 31 is formed on the opening 30a and the opening 30b of the first metal layer 25. This portion becomes the peripheral portion 21 a of the n-side electrode 21 and the peripheral portion 22 a of the p-side electrode 22.

  On the other hand, the opening 31a and the opening 31b of the second resist pattern 31 may be the same or wider than the opening 30a and the opening 30b of the first resist pattern 30, respectively. Thereby, the 1st metal layer 25 can be formed only in the side surface of the lower part of the 2nd metal layer 26a and the 2nd metal layer 26b. As a result, the electrical resistance at the time of supplying current to the nitride semiconductor light emitting device 1 can be reduced as compared with the case where the first metal layer 25 is not formed on the side surfaces of the lower portions of the second metal layer 26a and the second metal layer 26b. it can.

(Metal bump layer height adjustment step: S17)
Next, in the second metal layer forming step S16, the height of the upper surface of the second metal layer 26a formed in the opening 31a from the substrate 2 is the same as that of the upper surface of the second metal layer 26b formed in the opening 31b. A third metal layer 27 (see FIG. 3C (c)) for height adjustment is formed on the second metal layer 26a so as to be the same as the height from the substrate 2.

  For this purpose, first, as a third resist pattern forming step that is a sub-step of the metal bump layer height adjusting step S17, as shown in FIG. 3C (b), on the second metal layer 26a formed in the opening 31a. A third resist pattern 32 having an opening 32a is formed. Thus, the second metal layer 26b formed in the opening 31b is covered with the third resist pattern.

  The third resist pattern 32 can be either a positive resist or a negative resist, but this embodiment uses a positive resist. For this reason, the mask 41 for exposure is configured to have an opening in a portion that becomes the opening 32a of the third resist pattern. In the positive resist exposed using the mask 41, the exposed opening 32a is removed by development.

  Next, as shown in FIG. 3C (c), as a third metal layer forming step that is a sub-step of the metal bump layer height adjusting step S17, the second metal layer 26a formed in the opening 31a is subjected to electrolytic plating. As an electrode, the height of the upper surface of the third metal layer 27 for height adjustment from the substrate 2 is the same as the height of the upper surface of the second metal layer 26b formed in the opening 31b from the substrate 2. Then, the third metal layer 27 is formed by electrolytic plating. As a result, the third metal layer 27 having the same thickness as the difference between the height of the upper surface of the n-side electrode 21 from the substrate 2 and the height of the upper surface of the p-side electrode 22 from the substrate 2 was formed in the opening 31a. It is formed on the upper surface of the second metal layer 26a. Here, the third metal layer 27 constitutes the upper portion 23 b of the metal bump 23.

  When the third metal layer 27 is formed by electrolytic plating, the thickness of the third metal layer 27 can be controlled by the energization time to be formed if the concentration and current value of the electrolytic plating solution are the same. Further, the thickness of the third metal layer 27 may be controlled by appropriately combining the concentration of the electrolytic plating solution, the current value, and the energization time.

(Resist pattern removal step: S18)
Then, as shown in FIG. 3D, when the first resist pattern 30, the second resist pattern 31, and the third resist pattern 32 are removed, the second metal layer 26a and the third metal layer 27 become the metal bumps 23, and the second metal Layers 26b appear as metal bumps 24, respectively. At this time, the heights of the upper surface of the metal bump 23 on the n-side electrode 21 and the upper surface of the metal bump 24 on the p-side electrode 22 from the substrate 2 are aligned, and the metal bump 23 on the n-side electrode 21 is The area on the upper surface side is small in plan view (see FIG. 1).

(Chip division process: S19)
By dividing the plurality of nitride semiconductor light emitting elements 1 formed in a matrix on the substrate 2 into chips by scribing or dicing, the nitride semiconductor light emitting elements 1 on a chip basis are completed. Further, before dividing into chips, the substrate 2 may be ground (back grind) from the back surface of the substrate 2 and thinned to a desired thickness.

  Here, referring to FIG. 4 (refer to FIG. 1 and FIG. 2 as appropriate), the area on the upper surface side of the metal bump 23 formed on the n-side electrode 21 (the area of the upper surface of the upper part 23b) is the area on the bottom surface side ( A description will be given of the fact that it is smaller than the area of the bottom surface of the lower portion 23a.

  The second metal layer 26a formed in the second metal layer forming step S16 is formed so that the outer edge at the upper end is rounded. The roundness of the outer edge portion at the upper end is a shape that appears at the upper end portion, which is a growth end when the metal layer is formed by electrolytic plating as described above.

  FIG. 4A shows a state in which a positive resist is applied to form the third resist pattern 32 in the metal bump layer height adjusting step S17.

  Next, as shown in FIG. 4B, in order to form the opening 32a of the third resist pattern 32, exposure is performed using a mask 41 having an opening in a portion to become the opening 32a, and then development is performed. The exposed resist is removed. At this time, the peripheral portion of the rounded second metal layer 26a is insufficiently exposed, and the resist remains after development.

  Then, in order to adjust the height of the metal bump 23 and the metal bump 24 from the substrate 2 by metal plating, when electrolytic plating is performed with the resist remaining on the outer edge portion of the second metal layer 26a, FIG. As shown in FIG. 4C, a third metal layer 27 thinner than the second metal layer 26a is formed. This is because the third metal layer 27 does not grow by electrolytic plating at the outer edge portion of the second metal layer 26a where the resist remains, and the third metal layer 27 grows on the exposed central portion of the second metal layer 26a. It is.

  When the third metal layer 27 is grown sufficiently long, it grows little by little in the lateral direction. However, when the third metal layer 27 is grown short, it hardly grows in the lateral direction, and the second metal is also formed at the upper end. A third metal layer 27 thinner than the layer 26a is formed.

  Then, when the second resist pattern 31 and the third resist pattern 32 are removed, as shown in FIG. 4D, a metal bump 23 in which a relatively thick lower portion 23a and a thin upper portion 23b are laminated appears.

  As described above, according to the method for manufacturing a nitride semiconductor light emitting device in the first embodiment of the present invention, the manufacturing process can be shortened. In addition, the nitride semiconductor light emitting device 1 manufactured by the method for manufacturing a nitride semiconductor light emitting device in the first embodiment is highly reliable nitrided without fear of connection failure or leakage between electrodes during flip chip mounting. A semiconductor light emitting device can be obtained.

Second Embodiment
[Nitride semiconductor light emitting device]
Next, the structure of the nitride semiconductor light emitting device in the second embodiment of the present invention will be described with reference to FIG.
A nitride semiconductor light emitting device 1A according to the second embodiment of the present invention is a flip chip type LED, and includes a substrate 2, a nitride semiconductor light emitting device structure 10 stacked on the substrate 2, and a protection. At least a layer 20, an n-side electrode 21, a p-side electrode 22, a metal bump 23A, and a metal bump 24 are provided.
In addition, about the same structure as the nitride semiconductor light-emitting device 1 in 1st Embodiment, the same code | symbol is attached | subjected and description is abbreviate | omitted suitably.

  As shown in FIG. 5, the nitride semiconductor light emitting device 1A according to the second embodiment is different from the nitride semiconductor light emitting device 1 in the first embodiment shown in FIG. The metal bump 23A on the n-side electrode 21 is different in that the lower part 23Aa is thinner than the upper part 23Ab. That is, the metal bump 23A on the n-side electrode 21 has an area on the bottom surface side (that is, the area of the bottom surface of the lower portion 23Aa) smaller than an area on the upper surface side (that is, the area of the upper surface of the upper portion 23Ab) in plan view. The height of the upper surface of the metal bump 23 (ie, the upper surface of the upper portion 23b) from the substrate 2 is the same as the height of the upper surface of the metal bump 24 on the p-side electrode 22 from the substrate 2, and the metal bump. It is the same as that of the nitride semiconductor light emitting device 1 in the first embodiment that the outer edge portions of the upper end portions of 23A and the metal bumps 24 are rounded.

  Thus, since the height of the upper surface of the metal bump 23A on the n-side electrode 21 and the upper surface of the metal bump 24 on the p-side electrode 22 from the substrate 2 is the same, these metals are used in flip chip mounting. The bumps 23A and the metal bumps 24 are equally pressed from the substrate 2 side. Further, the metal bump 23A on the n-side electrode 21 emits light by reducing the area of the n-side electrode connection surface 10a because the area on the n-side electrode 21 side (bottom surface side) is smaller than the area on the upper surface side in plan view. The areas of the active layer 12 and the p-type nitride semiconductor layer 13 that contribute to the above can be increased. In addition, since the area of the mounting surface to be bonded to the wiring electrode of the mounting board, which is the upper surface of the metal bump 23A, is not unnecessarily small, the bonding strength between the metal bump 23A and the wiring electrode is greatly impaired. There is nothing. Furthermore, it is preferable because the wiring electrode of the mounting substrate can be designed without being restricted by the area on the n-side electrode 21 side.

  The operation of the nitride semiconductor light emitting device 1A in the second embodiment is the same as the operation of the nitride semiconductor light emitting device 1 in the first embodiment, and a description thereof will be omitted.

[Manufacturing method of nitride semiconductor light emitting device]
A method for manufacturing a nitride semiconductor light emitting device according to the second embodiment of the present invention will be described.
The method for manufacturing the nitride semiconductor light emitting device in the second embodiment is different from the method in the first embodiment shown in FIG. 2 in that the positive type is used as the third resist pattern in the metal bump layer height adjusting step S17. Since it is the same except that a negative resist is used instead of the resist, description of each step is omitted.

  Next, referring to FIG. 6 (refer to FIGS. 2 and 5 as appropriate), the area on the bottom surface side of the metal bump 23A formed on the n-side electrode 21 (the area of the bottom surface of the lower part 23Aa) is the area on the upper surface side (see FIG. It will be described that it is smaller than the area of the upper surface of the upper portion 23Ab.

  FIG. 6A shows a state in which a negative resist is applied to form the third resist pattern 32A in the metal bump layer height adjusting step S17. Here, the second resist pattern 31 formed using the negative resist and the third resist pattern 32A are shown as an integral one.

  As shown in FIG. 6A, in order to form an opening 32Aa on the second metal layer 26a of the third resist pattern 32A, exposure is performed with low intensity light using a mask 41A that shields the opening 32Aa. Then, the exposed portion 32Ab of the third resist pattern 32A is cured by performing the baking process. Thereafter, the entire surface of the third resist pattern 32A is exposed with strong light and then developed to remove the cured portion 32Ab and its lower layer, as shown in FIG. 6B.

  At this time, in the third resist pattern 32A formed integrally with the second resist pattern 31 which is a negative resist, the lower layer portion 32Ac of the cured portion 32Ab is removed by etching, so the second metal layer 26a The inner diameter of the opening 32Aa of the upper third resist pattern 32A is increased.

  Then, when electrolytic plating is performed using the third resist pattern 32A having such a shape, as shown in FIG. 6C, a mushroom-shaped third metal layer 27A having a thick upper portion is formed. The third metal layer 27A grows upward by electrolytic plating. However, the third metal layer 27A grows little by little in the lateral direction in the opening 32Aa where the inner diameter of the third resist pattern 32A is widened. It becomes.

  Then, when the second resist pattern 31 and the third resist pattern 32A are removed, as shown in FIG. 6D, the area on the bottom surface side (the area of the bottom surface of the lower part 23Aa) is changed to the area on the upper surface side (the upper surface of the upper part 23Ab). Metal bumps 23A formed smaller than (area) appear.

  As described above, according to the method for manufacturing a nitride semiconductor light emitting device in the second embodiment of the present invention, the manufacturing process can be shortened. In addition, the nitride semiconductor light emitting device 1A manufactured by the method for manufacturing a nitride semiconductor light emitting device in the second embodiment is highly reliable nitriding without fear of connection failure or leakage between electrodes at the time of flip chip mounting. A semiconductor light emitting device can be obtained.

<Third Embodiment>
[Nitride semiconductor light emitting device]
Next, the structure of the nitride semiconductor light emitting device in the third embodiment of the present invention will be described with reference to FIG.
The nitride semiconductor light emitting device 1B in the third embodiment is an LED that is mounted in a flip chip type. The nitride semiconductor light emitting device 1B in this embodiment includes a substrate 2, a nitride semiconductor light emitting device structure 10 stacked on the substrate 2, a protective layer 20, an n-side electrode 21, a p-side electrode 22, At least a metal bump 23B and a metal bump 24 are provided.
In addition, about the same structure as the nitride semiconductor light-emitting device 1 in 1st Embodiment, the same code | symbol is attached | subjected and description is abbreviate | omitted suitably.

  As shown in FIG. 7, the nitride semiconductor light emitting device 1B in the third embodiment is different from the nitride semiconductor light emitting device 1 in the first embodiment shown in FIG. The metal bump 23B on the n-side electrode 21 is different in that the lower part 23Ba is thinner than the upper part 23Bb. That is, the metal bump 23B on the n-side electrode 21 has an area on the upper surface side (that is, an area of the upper surface of the upper portion 23Bb) smaller than an area on the bottom surface side (that is, an area of the bottom surface of the lower portion 23Ba) in plan view. The height of the upper surface of the metal bump 23B (that is, the upper surface of the upper portion 23Bb) from the substrate 2 is the same as the height of the upper surface of the metal bump 24 on the p-side electrode 22 from the substrate 2, and the metal bump. It is the same as the nitride semiconductor light emitting device 1 in the first embodiment that the outer edge portions of the upper end portions of 23B and the metal bumps 24 are rounded.

  Thus, since the height of the upper surface of the metal bump 23B on the n-side electrode 21 and the upper surface of the metal bump 24 on the p-side electrode 22 from the substrate 2 is the same, these metals are used during flip chip mounting. The bumps 23B and the metal bumps 24 are equally pressed from the substrate 2 side. Further, the metal bump 23B on the n-side electrode 21 emits light by reducing the area of the n-side electrode connection surface 10a because the area on the n-side electrode 21 side (bottom surface side) is smaller than the area on the upper surface side in plan view. The areas of the active layer 12 and the p-type nitride semiconductor layer 13 that contribute to the above can be increased. In addition, since the area of the mounting surface to be bonded to the wiring electrode of the mounting board, which is the upper surface of the metal bump 23B, is not unnecessarily small, the bonding strength between the metal bump 23B and the wiring electrode is greatly impaired. There is nothing. Furthermore, it is preferable because the wiring electrode of the mounting substrate can be designed without being restricted by the area on the n-side electrode 21 side.

[Manufacturing method of nitride semiconductor light emitting device]
A method for manufacturing a nitride semiconductor light emitting device according to the third embodiment of the present invention will be described.

  As shown in FIG. 8, the method for manufacturing a nitride semiconductor light emitting device in the third embodiment includes a nitride semiconductor light emitting device structure forming step S20, a protective layer forming step S21, a first resist pattern forming step S22, Protective layer etching step S23, first metal layer forming step S24, second resist pattern forming step S25, metal bump layer height adjusting step S26, second resist pattern opening forming step S27, and third metal layer It includes a forming step S28, a resist pattern removing step S29, and a chip dividing step S30.

  In the first embodiment, after the second metal layer 26a and the second metal layer 26b having the same thickness are formed on the n-side electrode 21 and the p-side electrode 22, the height from the substrate 2 is adjusted. In contrast, the third metal layer 27 for height adjustment is formed on the second metal layer 26a, whereas in the third embodiment, the difference thickness for height adjustment is formed on the n-side electrode 21. The second metal layer 28 for height adjustment is formed first, and then the third metal layer 29a and the third metal layer 29b having the same thickness are formed on the second metal layer 28 and the p-side electrode 22. (See FIG. 9B (a)).

  Hereinafter, each step will be described in detail with reference to FIGS. 9A and 9B (see FIGS. 7 and 8 as appropriate). 9A and 9B, the description of the substrate 2 is omitted. Further, the shape of the second metal layer 28 that becomes the lower portion 23Ba of the metal bump 23B and the shape of the third metal layer 29a that becomes the upper portion 23Bb are simplified and shown by the same thickness.

  The nitride semiconductor light emitting device structure forming step S20 to the first metal layer forming step S24 and the chip dividing step S30 are respectively performed from the nitride semiconductor light emitting device structure forming step S10 to the first of the manufacturing method according to the first embodiment. Since it is the same as the metal layer forming step S14 and the chip dividing step S19, the description is omitted.

(Second resist pattern forming step: S25)
In the present embodiment, after the first metal layer forming step S24 (see FIG. 3B (b)), as shown in FIG. 9A (a), without removing the first resist pattern, the photolithography method is used. A second resist pattern 33 having an opening 33a is formed on the opening 30a of the first resist pattern 30 (see FIG. 3B (b)). The second resist pattern 33 is formed using a positive resist. For this reason, exposure is performed using a mask 42 having an opening in the opening 33a. Then, by developing, the first metal layer 25 that becomes the n-side electrode 21 is exposed in the opening 33a.

  Since the second resist pattern 33 is used for forming the metal bumps 23B and the metal bumps 24 by electrolytic plating, the film thickness of the second resist pattern 33 is the film of the metal bumps 23B and the metal bumps 24. It is formed thicker than the thickness. The thickness of the second resist pattern 33 can be set to about 20 μm, for example.

(Metal bump layer height adjusting step (second metal layer forming step): S26)
Next, as shown in FIG. 9A (b), the first metal layer 25 on the n-side electrode 21 exposed from the second resist pattern 33 is used as an electrode for electrolytic plating, and the lower portion 23Ba of the metal bump 23B is formed by electrolytic plating. A second metal layer 28 for adjusting the height is formed. At this time, the thickness of the formed second metal layer 28 is the same as the difference in height from the substrate 2 between the upper surface of the n-side electrode 21 and the upper surface of the p-side electrode 22.

The second metal layer 28 may be a single layer film such as Cu or Au or a multilayer film made of Cu / Ni / Au or the like.
In the electroplating, the wafer that has been completed up to the second resist pattern forming step S25 is immersed in a plating solution, and the first metal layer 25 is used as a negative electrode, and a current flows between the negative electrode and the positive electrode immersed in the plating solution. It is done by flowing.

(Second resist pattern opening forming step: S27)
Next, as shown in FIG. 9A (c), an opening 33b is formed in the second resist pattern 33 so that the first metal layer 25 to be the p-side electrode 22 is exposed. As a result, a second resist pattern 33 having openings on the upper surface of the second metal layer 28 formed on the n-side electrode 21 and the upper surface of the first metal layer 25 to be the p-side electrode 22 is formed.

(Third metal layer forming step: S28)
Next, as shown in FIG. 9B (a), metal bumps are formed by electrolytic plating using the second metal layer 28 formed in the opening 33a and the first metal layer 25 formed in the opening 33b as electrodes for electrolytic plating. The third metal layer 29a constituting the upper portion 23Bb of 23B and the third metal layer 29b constituting the metal bump 24 are formed with the same thickness.
As a result, the height of the upper surface of the third metal layer 29a formed in the opening 33a from the substrate 2 matches the height of the upper surface of the third metal layer 29b formed in the opening 33b from the substrate 2.

(Resist pattern removal step: S29)
Then, as shown in FIG. 9B (b), when the first resist pattern 30 and the second resist pattern 33 are removed, the metal bumps 23B composed of the third metal layer 29a and the second metal layer 28, and the third metal layer 29b. And metal bumps 24 made of At this time, the height of the upper surface of the metal bump 23B on the n-side electrode 21 from the substrate 2 and the height of the upper surface of the metal bump 24 on the p-side electrode 22 from the substrate 2 are aligned. The upper metal bump 23B has an area on the n-side electrode 21 side (bottom surface side) smaller than that on the upper surface side in plan view.

  Next, referring to FIG. 10 (refer to FIGS. 7 and 8 as appropriate), the area on the bottom surface side of the metal bump 23B formed on the n-side electrode 21 (the area of the bottom surface of the lower part 23Ba) is the area on the upper surface side (see FIG. It will be described that the upper surface 23Bb is smaller than the upper surface area.

  FIG. 10A shows the height of the upper surface of the metal bump 23B from the substrate 2 on the first metal layer 25 (see FIG. 9A (c)) to be the n-side electrode 21 in the metal bump layer height adjusting step S26. The second metal layer 28 having a thickness corresponding to the difference between the height of the upper surface of the metal bump 24 from the substrate 2 is shown. Then, in order to be able to form the third metal layer 29b on the first metal layer 25 (see FIG. 9A (c)) to be the p-side electrode 22, in the second resist pattern opening forming step S27, the opening Exposure is performed using a mask 43 (see FIG. 9A (c)) having an opening 33b.

  At this time, the second resist pattern 33 near the opening 33a on the n-side electrode 21 is not exposed, but the opening 33a of the second resist pattern 33 exposed in the second resist pattern forming step S25 is not exposed to the second resist. By the second development in the pattern opening forming step S27, a part of the inner wall of the opening 33a is further removed and spread.

  Then, by performing electrolytic plating in the third metal layer forming step S28, as shown in FIG. 10C, the third metal layer 29a is formed along the expanded inner diameter of the opening 33a. In electrolytic plating, the metal layer grows upward, but gradually grows in the lateral direction, so that the upper portion of the third metal layer 29a is formed to have a larger diameter than the second metal layer 28. Become.

  Then, when the second resist pattern 33 is removed, as shown in FIG. 10D, the area on the bottom side (the area of the bottom surface of the lower portion 23Ba) is smaller than the area on the upper surface side (the area of the upper surface of the upper portion 23Bb). A metal bump 23B appears.

  As described above, according to the method for manufacturing a nitride semiconductor light emitting device in the third embodiment of the present invention, the manufacturing process can be shortened. In addition, the nitride semiconductor light emitting device 1B manufactured by the method for manufacturing a nitride semiconductor light emitting device in the third embodiment is highly reliable nitride without fear of connection failure or leakage between electrodes during flip chip mounting. A semiconductor light emitting device can be obtained.

  Next, with reference to FIG. 11A, a state in which the nitride semiconductor light emitting device 1 according to the first embodiment is flip-chip mounted on the mounting substrate will be described.

  FIG. 11A shows a state in which the nitride semiconductor light emitting device 1 according to the first embodiment is flip-chip mounted on the mounting substrate 50. The metal bumps 23 of the nitride semiconductor light emitting element 1 are opposed to the wiring electrodes 51 of the mounting substrate 50, and the metal bumps 24 are opposed to the wiring electrodes 52. Then, the metal bump 23 is joined to the wiring electrode 51 and the metal bump 24 is joined to the wiring electrode 52 by receiving a pressing force from the substrate 2 side which is the back surface side of the nitride semiconductor light emitting element 1.

  At this time, since the height of the upper surface of the metal bump 23 from the substrate 2 and the height of the upper surface of the metal bump 24 from the substrate 2 are the same, the metal bump 23 and the metal bump 24 are evenly spaced from the substrate 2 side. Receives pressing force. For this reason, in the bonding between the metal bump 23 and the wiring electrode 51 and in the bonding between the metal bump 24 and the wiring electrode 52, the same bondability can be obtained.

  Further, the metal bumps 23 are crushed by the pressing force and spread in the lateral direction. Therefore, the wiring electrode 51 is formed wider than the area of the upper surface (wiring electrode 51 side) in plan view of the metal bump 23 in consideration of this spread. The same applies to the relationship between the metal bump 24 and the wiring electrode 52.

  Here, the metal bump 23 on the n-side electrode 21 has an upper portion 23b joined to the wiring electrode 51 having a thickness smaller than that of the lower portion 23a. Is smaller than the case where the thickness is the same as the thickness of the lower portion 23a. Therefore, the area of the wiring electrode 51 can be reduced corresponding to the thickness of the upper portion 23b. Thereby, the freedom degree of the wiring design of the mounting substrate 50 can be increased.

  FIG. 11B shows a state in which the nitride semiconductor light emitting device 1B according to the third embodiment is flip-chip mounted on the mounting substrate 50. The metal bumps 23B of the nitride semiconductor light emitting device 1B are opposed to the wiring electrodes 51 of the mounting substrate 50, and the metal bumps 24 are opposed to the wiring electrodes 52. The metal bump 23B and the metal bump 24 are bonded to the wiring electrode 51 and the wiring electrode 52, respectively, by receiving a pressing force from the substrate 2 side which is the back surface side of the nitride semiconductor light emitting device 1B.

  At this time, since the height of the upper surface of the metal bump 23B from the substrate 2 and the height of the upper surface of the metal bump 24 from the substrate 2 are the same, the metal bump 23B and the metal bump 24 are evenly spaced from the substrate 2 side. Receives pressing force. For this reason, in the bonding between the metal bump 23B and the wiring electrode 51, and in the bonding between the metal bump 24 and the wiring electrode 52, equivalent bondability can be obtained.

  Further, the metal bumps 23B are crushed by the pressing force and spread in the lateral direction. For this reason, the wiring electrode 51 is formed wider than the area of the upper surface (wiring electrode 51 side) in plan view of the metal bump 23B in consideration of this spread. The same applies to the relationship between the metal bump 24 and the wiring electrode 52.

  Furthermore, the metal bump 23B also extends in the lateral direction at the lower portion (on the n-side electrode 21 side) and contacts the exposed peripheral portion 21a of the n-side electrode 21. Here, since the thickness of the lower portion 23Ba of the metal bump 23B on the n-side electrode 21 is thinner than the thickness of the upper portion 23Bb, the area that the lower portion 23Ba is crushed and expanded is larger than the case where the lower portion 23Ba has the same thickness as the upper portion 23Bb. Get smaller. Therefore, the n-side electrode 21 can be reduced in area. Thereby, nitride semiconductor light emitting element 1B can reduce the region for forming n-side electrode 21 and increase the areas of p-type nitride semiconductor layer 13 and active layer 12 that contribute to light emission. For this reason, more light can be extracted from the nitride semiconductor light emitting device 1B.

  In the nitride semiconductor light emitting device 1A in the second embodiment shown in FIG. 5 as well, the metal bumps 23A on the n-side electrode 21 are formed on the lower portion 23Aa as in the nitride semiconductor light emitting device 1B in the third embodiment. Since the area in plan view is smaller than the area in plan view of the upper portion 23Ab, the same effect as the nitride semiconductor light emitting device 1B in the third embodiment can be obtained.

DESCRIPTION OF SYMBOLS 1, 1A, 1B Nitride semiconductor light emitting element 2 Substrate 10 Nitride semiconductor light emitting element structure 10a N side electrode connection surface 10b P side electrode connection surface 11 N type nitride semiconductor layer 12 Active layer 13 P type nitride semiconductor layer 14 Full surface electrode 15 Cover electrode 20 Protective layer 21 N side electrode 21a Peripheral part 22 P side electrode 22a Peripheral part 23, 23A, 23B Metal bump 23a, 23Aa, 23Ba Lower part 24b, 24Ab, 24Bb Upper part 24 Metal bump 25 First metal layer 26a , 26b Second metal layer 27, 27A Third metal layer 28 Second metal layer 29a, 29b Third metal layer 30 First resist pattern 30a, 30b Opening 31 Second resist pattern 31a, 31b Opening 32, 32A Third Resist pattern 32a, 32b Opening 33 Second resist pattern 33a, 3 b opening 40, 41, 42, 43 mask

Claims (7)

An n-type nitride semiconductor layer and a p-type nitride semiconductor layer stacked on a substrate, and an n-side electrode for electrically connecting the n-side electrode to the n-type nitride semiconductor layer on the same plane side of the substrate A nitride semiconductor light emitting device structure having a connection surface and a p-side electrode connection surface for electrically connecting a p-side electrode to the p-type nitride semiconductor layer;
The n-side electrode connected to the n-side electrode connection surface;
The p-side electrode connected to the p-side electrode connection surface;
A method of manufacturing a flip-chip type nitride semiconductor light emitting device having metal bumps formed on the n-side electrode and the p-side electrode,
A protective layer forming step of forming an insulating protective layer on the nitride semiconductor light emitting device structure;
A first resist pattern forming step of forming a first resist pattern having an opening on the n-side electrode connection surface and the p-side electrode connection surface;
A protective layer etching step of etching the protective layer using the first resist pattern as a mask;
A first metal that forms a first metal layer to be the n-side electrode and the p-side electrode on the first resist pattern, on the n-side electrode connection surface exposed from the protective layer and on the p-side electrode connection surface A layer forming step;
A second resist pattern forming step of forming a second resist pattern having an opening on the n-side electrode connection surface and the p-side electrode connection surface exposed from the protective layer;
A second metal layer forming step in which the first metal layer is used as an electrode for electrolytic plating, and a second metal layer is formed by electrolytic plating to form a lower metal bump on the n-side electrode and a metal bump on the p-side electrode. ,
A third resist pattern forming step of forming a third resist pattern having an opening on the n-side electrode connection surface and covering the second metal layer formed on the p-side electrode connection surface;
The second metal layer formed on the n-side electrode connection surface is used as an electrode for electrolytic plating, and a third metal layer that becomes an upper part of the metal bump on the n-side electrode by electrolytic plating is formed on the third metal layer. A third metal layer forming step of forming the upper surface of the second metal layer formed on the p-side electrode connection surface to be the same as the height from the substrate, the height from the substrate;
A resist pattern removing step of removing the first resist pattern and the second resist pattern;
Are sequentially performed. A method for manufacturing a nitride semiconductor light emitting device. An n-type nitride semiconductor layer and a p-type nitride semiconductor layer stacked on a substrate, and an n-side electrode for electrically connecting the n-side electrode to the n-type nitride semiconductor layer on the same plane side of the substrate A nitride semiconductor light emitting device structure having a connection surface and a p-side electrode connection surface for electrically connecting a p-side electrode to the p-type nitride semiconductor layer;
The n-side electrode connected to the n-side electrode connection surface;
The p-side electrode connected to the p-side electrode connection surface;
A method of manufacturing a flip-chip type nitride semiconductor light emitting device having metal bumps formed on the n-side electrode and the p-side electrode,
A protective layer forming step of forming an insulating protective layer on the nitride semiconductor light emitting device structure;
A first resist pattern forming step of forming a first resist pattern having an opening on the n-side electrode connection surface and the p-side electrode connection surface;
A protective layer etching step of etching the protective layer using the first resist pattern as a mask;
A first metal that forms a first metal layer to be the n-side electrode and the p-side electrode on the first resist pattern, on the n-side electrode connection surface exposed from the protective layer and on the p-side electrode connection surface A layer forming step;
A second resist pattern forming step of forming a second resist pattern having an opening on the n-side electrode connection surface;
A second metal layer serving as a lower portion of the metal bump on the n-side electrode having a thickness corresponding to a difference in height between the n-side electrode connecting surface and the p-side electrode connecting surface from the substrate; A second metal layer forming step of forming a metal layer by electrolytic plating using an electrode for electrolytic plating;
A second resist pattern opening forming step of forming an opening on the p-side electrode connecting surface in the second resist pattern;
The second metal layer and the first metal layer are used as electrodes for electrolytic plating, and a third metal layer is formed by electrolytic plating to form upper portions of metal bumps on the n-side electrode and metal bumps on the p-side electrode. Three metal layer forming steps;
A resist pattern removing step of removing the first resist pattern and the second resist pattern;
Are sequentially performed. A method for manufacturing a nitride semiconductor light emitting device. An n-type nitride semiconductor layer and a p-type nitride semiconductor layer stacked on a substrate, and an n-side electrode for electrically connecting the n-side electrode to the n-type nitride semiconductor layer on the same plane side of the substrate A nitride semiconductor light emitting device structure having a connection surface and a p-side electrode connection surface for electrically connecting a p-side electrode to the p-type nitride semiconductor layer;
The n-side electrode connected to the n-side electrode connection surface;
The p-side electrode connected to the p-side electrode connection surface;
A flip chip type nitride semiconductor light emitting device having metal bumps formed on the n-side electrode and the p-side electrode,
The height of the upper surface of the metal bump formed on the n-side electrode from the substrate is the same as the height of the upper surface of the metal bump formed on the p-side electrode from the substrate, and the n The nitride semiconductor light emitting element, wherein the metal bump formed on the side electrode has an area on the upper surface side smaller than an area on the bottom surface side in plan view. An n-type nitride semiconductor layer and a p-type nitride semiconductor layer stacked on a substrate, and an n-side electrode for electrically connecting the n-side electrode to the n-type nitride semiconductor layer on the same plane side of the substrate A nitride semiconductor light emitting device structure having a connection surface and a p-side electrode connection surface for electrically connecting a p-side electrode to the p-type nitride semiconductor layer;
The n-side electrode connected to the n-side electrode connection surface;
The p-side electrode connected to the p-side electrode connection surface;
A flip chip type nitride semiconductor light emitting device having metal bumps formed on the n-side electrode and the p-side electrode,
The height of the upper surface of the metal bump formed on the n-side electrode from the substrate is the same as the height of the upper surface of the metal bump formed on the p-side electrode from the substrate, and the n The nitride semiconductor light emitting element, wherein the metal bump formed on the side electrode has a bottom surface area smaller than a top surface area in plan view.   At least one of the n-side electrode or the p-side electrode is, in plan view, more than the bottom surface of the metal bump formed on the n-side electrode and the bottom surface of the metal bump formed on the p-side electrode, respectively. 5. The nitride semiconductor light emitting device according to claim 3, wherein the nitride semiconductor light emitting device is wide.   4. An insulating protective layer that covers a surface of the nitride semiconductor light emitting element structure, wherein upper surfaces of the n-side electrode and the p-side electrode are exposed from the protective layer. The nitride semiconductor light-emitting device according to claim 5.   4. The outer edge of the upper end of at least one of the metal bump formed on the n-side electrode and the metal bump formed on the p-side electrode is rounded. The nitride semiconductor light emitting device according to any one of claims 6 to 9.

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