JP2013130453A - Semiconductor pressure sensor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor capable of preventing generation of defective products with high accuracy.SOLUTION: The semiconductor pressure sensor includes a mother board 14 where one surface of a semiconductor pressure sensor chip 11 having a diaphragm 13 is connected to one surface and a first pressure guide hole 15 is formed, a spacer 16 disposed around the semiconductor pressure sensor chip, a circuit pattern 17 disposed in one surface of the spacer, a bonding wire 18 for interconnecting the circuit pattern and the semiconductor pressure sensor chip, a bump 19 having its one end surface connected to the circuit pattern, an insulating plate 21 where a second pressure guide hole 22 having one surface connected to the other end surface of the bump and communicated with a space formed around the bump and a signal line 23 having one end connected to the bump and a signal extracted to the outside are provided, and a case 24 having one end side connected to the insulating plate and the other end side connected to the mother board and enclosing the semiconductor pressure sensor chip, the spacer, and the bump.

Description

The present invention relates to a semiconductor pressure sensor.
More specifically, the present invention relates to a semiconductor pressure sensor that can perform pressure measurement with high accuracy even based on bump bonding and prevent occurrence of defective products.

FIG. 6 is an explanatory view showing the structure of a main part of a conventional example that is generally used.
In the figure, a semiconductor pressure sensor chip 1 is die-bonded on a mother substrate 3 via a glass pedestal 2 with a low-stress adhesive 4 such as rubber, gel-like silicone resin or epoxy resin. The mother board 3 is formed with an air opening hole 3 a that communicates with the semiconductor pressure sensor chip 1 through a through hole 2 a formed substantially at the center of the glass pedestal 2. Moreover, the taper 3b is formed in the mounting side of the glass pedestal 2 of the air release hole 3a.
Further, the semiconductor pressure sensor chip 1 is disposed in the recess 5a of the resin-molded cover 5 having a recess 5a for housing the semiconductor pressure sensor chip 1 and a pressure introduction hole 5b for applying pressure in the recess 5a. A circuit pattern 5c is formed from the portion facing the electrode (not shown) formed on the semiconductor pressure sensor chip 1 on the inner peripheral surface of the cover 5 to the opening side of the recess 5a. One end of the circuit pattern 5 c is electrically connected to an electrode (not shown) of the semiconductor pressure sensor chip 1 via the bump 6, and the other end is connected to the circuit pattern 7 formed on the mother board 3. The cover 5 is bonded to the mother board 4 with an adhesive 4.

Japanese Patent Laid-Open No. 10-274584 JP-A-10-274582 Japanese Patent Laid-Open No. 10-274583 Japanese Patent Laid-Open No. 2004-45216

Such an apparatus has the following problems.
Since the semiconductor pressure sensor and the cover are bonded via the bumps, in the pressure measurement under high pressure, the distortion of the cover deformed by the pressure is directly transmitted to the pressure sensor, and the distortion is output as an erroneous signal.
Since the mother board, the semiconductor pressure sensor, and the cover are firmly bonded with adhesive and bumps, a peeling force is generated between the mother board and the cover when measuring pressure under high pressure, resulting in excessive stress on the bumps. Concentration occurs. Since the stress is directly transmitted to the sensor via the bump, the distortion is output as an erroneous signal.
In pressure measurement under high pressure, a peeling force is generated between the mother board and the cover, and excessive stress concentration occurs in the bump portion. For this reason, there is a high risk of occurrence of peeling or failure at the bump interface.
Because the semiconductor pressure sensor, which is a different material, and the cover are bump-bonded, the strain due to the difference in thermal expansion coefficient between the semiconductor pressure sensor and the cover is transferred to the semiconductor pressure sensor when measuring pressure at high or low temperatures, and the strain is mistaken. Output as a signal.
Residual strain due to the difference in thermal expansion coefficient during bump bonding concentrates on the bump and bonding interface for a long period of time, causing fatigue and output value drift.
Residual strain due to a difference in thermal expansion coefficient is concentrated on the bump portion during bump bonding, and peeling or breakage failure occurs at the bump and its bonding interface.

  An object of the present invention is to solve the above-described problems, and to provide a semiconductor pressure sensor that can perform highly accurate pressure measurement and prevent occurrence of defective products even based on bump bonding.

In order to achieve such a problem, in the present invention, in the semiconductor pressure sensor of claim 1,
In a semiconductor pressure sensor having a case in which a semiconductor pressure sensor chip is built, a plate-like semiconductor pressure sensor chip in which a diaphragm is formed by a recess provided on one surface, and one surface of the semiconductor pressure sensor chip is A mother board connected to one surface and provided with a first pressure introduction hole communicating with the recess, a spacer provided with a gap around the semiconductor pressure sensor chip, and one surface of the spacer A circuit pattern provided on the substrate, a bonding wire for connecting the circuit pattern and the semiconductor pressure sensor chip, a bump having one end connected to the circuit pattern, and one surface connected to the other end of the bump. The second pressure guiding hole communicating with the space formed around the bump and the signal line from which one end is connected to the bump and a signal is taken out to the outside And a case in which one end side is connected to the insulating plate and the other end side is connected to the mother board, and a semiconductor pressure sensor chip, the spacer, and the bump are enclosed. .

In the semiconductor pressure sensor according to claim 2 of the present invention, in the semiconductor pressure sensor according to claim 1,
The spacer and the insulating plate are made of a material having the same thermal expansion coefficient.

In the semiconductor pressure sensor according to claim 3 of the present invention, in the semiconductor pressure sensor according to claim 1 or 2,
The insulating plate and the case are made of an insulating material and are integrally formed.

According to claim 1 of the present invention, there are the following effects.
Since the pressure sensor chip is bonded to the circuit pattern provided on the spacer with a bonding wire while maintaining a gap with the spacer, distortion due to the difference in thermal expansion coefficient among the insulating plate, spacer, and case is applied to the pressure sensor chip. In addition, it is possible to obtain a semiconductor pressure sensor capable of realizing highly accurate pressure measurement even in pressure measurement at high temperature or low temperature.
Since the pressure sensor chip is bonded to the circuit pattern provided on the spacer with a bonding wire while maintaining a gap with the spacer, the distortion of the insulating plate or case deformed by high pressure is not transmitted to the pressure sensor chip. In addition, a semiconductor pressure sensor capable of realizing high-precision pressure measurement even in pressure measurement under high pressure can be obtained.

  The pressure sensor chip is bonded to the circuit pattern provided on the spacer with a bonding wire while maintaining a gap with the spacer. Therefore, even when measuring pressure under high pressure, the peeling force between the motherboard and the case However, it is possible to obtain a semiconductor pressure sensor that can greatly reduce the peeling and destruction of the bump interface even under high pressure without being transmitted to the bump portion.

According to claim 2 of the present invention, there are the following effects.
Since the spacer and the insulating plate are made of a material having the same thermal expansion coefficient, the residual strain at the time of bump bonding generated in the bump can be made almost zero, and the bump and its bonding interface are peeled or broken due to the residual stress. A semiconductor pressure sensor that can eliminate the above-described defects can be obtained.

According to claim 3 of the present invention, there are the following effects.
Since the insulating plate and the case are made of an insulating material and are integrally formed, it is possible to obtain a semiconductor pressure sensor that can reduce the number of components and can be made inexpensive.

It is principal part structure explanatory drawing of one Example of this invention. It is principal part structure explanatory drawing of the other Example of this invention. It is principal part structure explanatory drawing of the other Example of this invention. It is principal part structure explanatory drawing of the other Example of this invention. It is principal part structure explanatory drawing of the other Example of this invention. It is principal part structure explanatory drawing of the prior art example generally used conventionally.

Hereinafter, the present invention will be described in detail with reference to the drawings.
FIG. 1 is an explanatory view of the main part configuration of an embodiment of the present invention.
In the figure, the same symbol structure as in FIG. 6 represents the same function.
Only the difference from FIG. 6 will be described below.

In FIG. 1, a semiconductor pressure sensor chip 11 has a plate shape in which a diaphragm 13 is formed by a recess 12 provided on one surface.
The mother substrate 14 is provided with a first pressure introducing hole 15 that is connected to one surface of the semiconductor pressure sensor chip 11 and communicates with the recess 12.
The spacer 16 is provided around the semiconductor pressure sensor chip 11 with a gap.
The circuit pattern 17 is provided on one surface of the spacer 16.
The bonding wire 18 connects the circuit pattern 17 and the semiconductor pressure sensor chip 11.

One end surface of the bump 19 is connected to the circuit pattern 17.
The insulating plate 21 has one surface connected to the other end surface of the bump 19, a second pressure introducing hole 22 communicating with a space formed around the bump 19, and one end connected to the bump 19, and a signal is transmitted to the outside. A signal line 23 to be taken out is provided.
The case 24 has one end connected to the insulating plate 21 and the other end connected to the mother board, and the semiconductor pressure sensor chip 11, the spacer 16, and the bump 19 are enclosed.
In this case, the spacer 16 and the insulating plate 21 are made of a material having the same thermal expansion coefficient. For example, a ceramic material is used.

In this case, a glass pedestal 25 is provided between the semiconductor pressure sensor chip 11 and the mother board 14. Of course, the pedestal 25 is not provided, and the semiconductor pressure sensor chip 11 and the mother board 14 may be directly connected.
The pedestal 25 is sealed and bonded to the mother board 14 with the bonding material 26 and separates the pressures of the first pressure introducing hole 15 and the second pressure introducing hole 22.
The mother board 14 and the case 24 are joined by a joining method suitable for the material, such as welding, eutectic bonding, or adhesive.
Reference numeral 27 denotes a third pressure introducing hole provided in the base 25.

In the above configuration, the semiconductor pressure sensor chip 11 detects the strain generated by the pressure difference between the pressure from the first pressure introduction hole 15 and the pressure of the second pressure introduction hole 22.
The detected strain is converted into an electrical signal by the semiconductor pressure sensor chip 11.
The electrical signal of the semiconductor pressure sensor chip 11 is taken out through the bonding wire 18, the circuit pattern 17, the bump 19, and the signal line 23.

As a result,
Since the pressure sensor chip 11 is bonded to the circuit pattern 17 provided on the spacer 16 with the bonding wire 18 while maintaining a gap with the spacer 16, the thermal expansion coefficient difference between the insulating plate 21, the spacer 16, and the case 24. Thus, a semiconductor pressure sensor capable of realizing high-precision pressure measurement even in high-pressure or low-temperature pressure measurement can be obtained.
Since the pressure sensor chip 11 is bonded to the circuit pattern 17 provided on the spacer 16 and the bonding wire 18 while maintaining a gap with the spacer 16, the distortion of the insulating plate 21 and the case 24 deformed by high pressure is not caused. Thus, a semiconductor pressure sensor capable of realizing high-precision pressure measurement even in pressure measurement under high pressure can be obtained without being transmitted to the pressure sensor chip 11.

  Since the pressure sensor chip 11 is bonded to the spacer 16 with a circuit pattern 17 provided on the spacer 16 and a bonding wire 18 while maintaining a gap, even in the pressure measurement under high pressure, the mother substrate 14 and the case are connected. The peeling force between the 24 is not transmitted to the bump 19 portion, and a semiconductor pressure sensor can be obtained that can extremely reduce the peeling and breakage of the bump 19 interface even under high pressure.

  Since the spacer 16 and the insulating plate 21 are made of a material having the same thermal expansion coefficient, the residual strain generated when the bump 19 is bonded to the bump 19 can be substantially zero, and the bump 19 and the bonding due to the residual stress can be reduced. A semiconductor pressure sensor that can eliminate the peeling of the interface and the failure of destruction can be obtained.

FIG. 2 is an explanatory view showing the construction of the main part of another embodiment of the present invention.
In FIG. 2, instead of the insulating plate 21, the ceramic layer 31 and the internal wiring 32 can be used to replace a multilayer ceramic substrate such as HTCC or LTCC.
Although not shown, the internal wiring 32 and the signal line 23 are electrically connected by solder or the like.

FIG. 3 is an explanatory view showing the structure of the main part of another embodiment of the present invention.
FIG. 3 shows an embodiment in which the case 24 and the insulating plate 21 are replaced with a withstand voltage case 41.

  As a result, a semiconductor pressure sensor can be obtained in which the number of components can be reduced and the cost can be reduced.

FIG. 4 is an explanatory view showing the configuration of the main part of another embodiment of the present invention.
In FIG. 4, the second pressure guiding hole 51 is provided in the mother board 14.

FIG. 5 is an explanatory view showing the structure of the main part of another embodiment of the present invention.
In FIG. 5, the case 24 is provided with a second pressure introducing hole 61.

Of course, the first pressure guide hole 15 can be used as an absolute pressure gauge by vacuum-sealing.
Of course, the first pressure introduction hole 15 and the second pressure introduction hole 22 can be used as a differential pressure gauge or a level gauge by connecting to the high pressure side and the low pressure side, respectively.

The above description merely shows a specific preferred embodiment for the purpose of explanation and illustration of the present invention.
Therefore, the present invention is not limited to the above-described embodiments, and includes many changes and modifications without departing from the essence thereof.

DESCRIPTION OF SYMBOLS 11 Semiconductor pressure sensor chip 12 Recessed part 13 Diaphragm 14 Mother board 15 1st pressure-induction hole 16 Spacer 17 Circuit pattern 18 Bonding wire 19 Bump 21 Insulation board 22 2nd pressure-induction hole 23 Signal line 24 Case 25 Base 26 Bonding material 27 Third pressure hole 31 Ceramic layer 32 Internal wiring 41 Dielectric withstand voltage case 51 Second pressure hole 61 Second pressure hole

Claims (3)

In a semiconductor pressure sensor having a case with a built-in semiconductor pressure sensor chip,
A plate-like semiconductor pressure sensor chip in which a diaphragm is formed by a recess provided on one surface;
One surface of the semiconductor pressure sensor chip is connected to one surface, and a mother substrate provided with a first pressure introducing hole communicating with the recess,
A spacer provided with a gap around the semiconductor pressure sensor chip;
A circuit pattern provided on one surface of the spacer;
A bonding wire connecting the circuit pattern and the semiconductor pressure sensor chip;
A bump having one end face connected to the circuit pattern;
One surface is connected to the other end surface of the bump, and a second pressure introducing hole communicating with a space formed around the bump and a signal line for connecting one end to the bump and extracting a signal to the outside are provided. An insulated plate,
A semiconductor pressure sensor comprising: a case in which one end side is connected to the insulating plate and the other end side is connected to the mother board, and a semiconductor pressure sensor chip, the spacer, and the bump are enclosed. The semiconductor pressure sensor according to claim 1, wherein the spacer and the insulating plate are made of a material having the same thermal expansion coefficient. The semiconductor pressure sensor according to claim 1, wherein the insulating plate and the case are made of an insulating material and are integrally formed.

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