JP2013129542A - Method for producing epitaxially grown thin film of metal organic material - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for producing an epitaxially grown thin film of a metal-organic material whereby a uniform crystalline structure is formed on a wafer.SOLUTION: The method 1 for forming an epitaxially grown thin film includes performing a vacuum step, a combustion step, and a formation step in a closed space 2 in which a wafer substrate 3 and alpha rays 4 are previously set, wherein the vacuum step comprises evacuating the closed space 2 to maintain it in an ultra-high vacuum environment, the combustion step comprises sucking a strongly acidic substance 60 into the closed space 2 in the evacuation course to apply a high pressure to the closed space 2 to instantaneously combust the strongly acidic substance 60 by the principle of vacuum discharge and to thereby generate an instantaneous chemical temperature of at least 1,100 degrees, and the formation step comprises allowing the instantaneous combustion to continue for a definite period of time to purify the strongly acidic substance 60 by thermal sublimation into a perfect gas, whereupon the strongly acidic substance 60 begins discharge by the use of the high potential difference, and whereupon the electrons and nuclei of molecules of the gas formed by the thermal sublimation purification are passed through the wafer substrate 3 to separate the electrons among them to yield a crystalline body 61 to gain mass and the nuclei are in turn and uniformly embedded in the wafer substrate 3 to form an epitaxially grown thin film.

Description

  The present invention relates to an epitaxy method, and more particularly to a method for producing an epitaxy thin film of a metal organic material that is used on a wafer and forms a uniform crystal structure.

Currently, epitaxy thin film production methods used on wafers are roughly divided by liquid crystal epitaxy (Liquid Phase Epitaxy, LEP), metal organic vapor phase epitaxy (Metal-organic Chemical Vapor Deposition, MOCVD), It is divided into molecular beam epitaxy (MBE).
The liquid crystal epitaxy method is used for general light emitting diodes. In the molecular beam epitaxy method, a flat epitaxy thin film that is extremely thin and high in purity can be grown relatively easily, but the production capacity is low and the growth rate of the epitaxy thin film is slow. In addition to the high purity and flatness of the epitaxy thin film, as well as the molecular beam epitaxy method, the metalorganic vapor phase epitaxy method has high production capacity and the growth rate of the epitaxy thin film is faster than the molecular beam epitaxy method. Currently, metalorganic vapor phase epitaxy is used in many processes.

  In the conventional metal organic vapor phase epitaxy method, first, a gallium arsenide (GaAs) substrate is placed in a growth furnace. Further, a vapor of a methyl or ethyl compound (group III or group II metal element alkyl compound) and a hydride or alkylated (nonmetal group V or group VI element) gas are injected. Next, a thermo reaction is generated at a high temperature to generate a III-V or II-VI group compound, which is deposited on a gallium arsenide substrate and has a thickness of only a few microns (1 mm = 1000 microns). The compound is deposited on a semiconductor epitaxial layer. The gallium arsenide substrate provided with the outer extension layer is usually called an epitaxial wafer. When this is processed into a chip and energized, a very pure single color such as red, yellow or blue is emitted.

  However, in the conventional metal organic vapor phase epitaxy method, in the process of uniform epitaxy thin film (III-V or II-VI group compound deposition), it is not easy to control the manufacturing process parameters. In addition, chip processing such as thickness adjustment and polishing must be performed. In other words, the conventional metal organic vapor phase epitaxy method controls the temperature, pressure, concentration of reactants, etc. according to the types and ratios of reactants, controls different parameters, and stabilizes the deposition components. And the quality control of crystal phase etc. must be maintained. In addition, after the formation of the epitaxy thin film, the thickness of the epitaxy thin film is adjusted. Therefore, unless it is polished to several hundred nanometers (1 micron = 1000 nanometers), a usable true light emitting thickness cannot be achieved. . Therefore, the manufacturing process takes a long time (one week for the growth of one epitaxial thin film), the crystal phase is not easy to control, the yield is low, the production capacity is very low, and the necessary equipment occupies the factory. Since the area is extremely large, the amount of investment is enormous, making it impossible to reduce costs and increase production efficiency.

  The object of the present invention is to form a uniform crystal structure on a wafer in a short time with equipment having a small volume, high yield, high production capacity and quality, and effective equipment area and cost. It is an object to provide a method of manufacturing an organic thin film of an organic metal substance that can be lowered.

In order to achieve the above-mentioned object, the present invention provides the following method for producing an epitaxial thin film of a metal organic material.
In the method for producing an organic metal thin film, a vacuum step, a combustion step, and a formation step are performed in a sealed space in which a wafer substrate and α-rays are previously installed.
In the vacuum step, the sealed space is evacuated to maintain an ultra-vacuum environment,
In the combustion step, in the vacuum process, a strong acid substance is sucked into the sealed space, a high pressure is applied to the sealed space, and the strong acid substance is burned instantaneously according to a vacuum discharge principle. Achieve at least 1100 degrees,
In the forming step, the instantaneous combustion is continued for a certain time, and the strong acid substance is purified by thermal sublimation to form a complete gas,
As a result, the strong acid substance begins to discharge in an ultra-vacuum and high-pressure environment. Due to the high-voltage potential difference, electrons and nuclei of gas molecules formed by thermal sublimation purification are separated through the wafer substrate, and the crystals therein are separated. A body is created and gains mass and is sequentially and evenly embedded on the wafer substrate to form an epitaxy film.

  The method for producing a metal organic epitaxy thin film of the present invention is capable of forming a uniform crystal structure on a wafer in a short time with a small volume equipment, high yield, high production capacity and quality, and Equipment area and cost can be reduced effectively.

It is a block chart of the epitaxy thin film manufacturing method of this invention metal organic substance. It is an Example schematic diagram of the epitaxy thin film manufacturing method of this invention metal organic substance.

As shown in FIG. 1, in the method 1 for producing a metal organic matter epitaxy thin film of the present invention, a wafer substrate 3 and α rays 4 are previously installed in a sealed space 2.
The volume of the sealed space 2 is very small and can be placed on a general work desk. The wafer substrate 3 employs an organic metal. For example, silicon element crystal rods such as aluminum oxide, aluminum nitride, aluminum arsenide, and gallium nitride. In this embodiment, a silicon element crystal rod of 2 inch gallium nitride is employed. The α-ray 4 has two positive charges, can be very easily ionized with other substances, and is placed opposite to the wafer substrate 3 having the negative electrode. In the sealed space 2, a vacuum step 5, a combustion step 6, and a formation step 7 are performed to manufacture an epitaxy thin film. As shown in FIG. 2 in accordance with FIG. 1, in the vacuum step 5, the sealed space 2 is evacuated and an ultra-vacuum environment is maintained by minus 2 atmospheric pressure 8.

In the combustion step 6, the strong acid substance 60 is sucked into the sealed space 2 in the vacuum process described above. The strong acid material 60 employs osmium tetroxide (O _s O ₄ ). Its characteristics are colorless, volatile, and easy to sublime at room temperature. A high pressure of 10 mA, 140,000 volts, is applied to the enclosed space 2, and the strong acid substance 60 (O _s O ₄ ) is instantaneously combusted according to the vacuum discharge principle, and the instantaneous chemical temperature is at least 1100 degrees. .

In the formation step 7, the above-mentioned instantaneous combustion is continued for 16 seconds (if a 4-inch wafer is used, the instantaneous combustion is continued for 30 seconds), and the strong acid substance 60 (O _s O ₄ ) is purified by thermal sublimation, Complete gas. As a result, the strong acid substance 60 (O _s O ₄ ) starts to discharge in an ultra-vacuum and high-pressure environment, and the electrons and atomic nuclei of the gas molecules formed by thermal sublimation purification by the high-pressure potential difference are passed through the wafer substrate 3. Separate the electrons inside. In other words, the α-ray 4 (positive electrode) and the wafer substrate 3 (negative electrode) dissociate osmium (O _s ) gas atoms of the strong acid substance 60 (O _s O ₄ ) under an ultra vacuum. After the osmium ions (O _s ⁺ ) are accelerated and collided, a crystal 61 is generated to acquire mass, and are sequentially and uniformly embedded on the wafer substrate to form an epitaxy thin film.

As described above, the advantages of the present invention and the effects achieved are as follows.
1． In the present invention, the epitaxial thin film is uniformly embedded on the wafer substrate by ultra-vacuum combustion and electric discharge, so that the epitaxial thin film is slowly formed by the growth method and compared with the conventional method that requires processing processes such as cutting and polishing. Obviously better in the manufacturing process.
2． Since the equipment required for the present invention is small in volume, the difference is very large as compared with the conventional equipment that needs to be installed by consuming the whole area of the factory.
3． The present invention can form a uniform crystal structure within a short time, can complete an epitaxy thin film in a short time (16 seconds per 2 inch wafer), and takes a week to form. Compared with, efficiency can be dramatically improved.
Four. In the manufacturing process, the α ray 4 (positive electrode) and the wafer substrate 3 (negative electrode) are uniformly stabilized by high-pressure vacuum discharge in the manufacturing process, the wafer substrate 3 electrons are separated, and the defective rate of the manufacturing process is low (about 30%) Therefore, compared with the conventional manufacturing process with a high defective product rate (about 60%), the manufacturing efficiency can be effectively increased.

  The above description is only an example of the present invention, and does not limit the scope of the present invention. Any equivalent changes and modifications that can be made based on the scope of the claims of the present invention are all described in the present invention. Shall belong to the scope covered by the rights.

DESCRIPTION OF SYMBOLS 1 Epitaxy thin film manufacturing method of metal organic substance 2 Sealed space 3 Wafer substrate 4 Alpha ray 5 Vacuum step 6 Combustion step 7 Formation step 60 Strong acid substance 61 Crystalline 8 Minus 2 atmosphere

Claims (6)

In the method for producing an organic metal thin film, a vacuum step, a combustion step, and a formation step are performed in a sealed space in which a wafer substrate and α-rays are previously installed.
In the vacuum step, the sealed space is evacuated to maintain a super vacuum environment,
In the combustion step, in the vacuum process, a strong acid substance is sucked into the sealed space, a high pressure is applied to the sealed space, and the strong acid substance is instantaneously burned according to a vacuum discharge principle, and an instantaneous chemical temperature is Achieve at least 1100 degrees,
In the forming step, the instantaneous combustion is continued for a certain time, and the strong acid substance is purified by thermal sublimation to form a complete gas,
As a result, the strong acid substance begins to discharge in an ultra-vacuum and high-pressure environment, and due to the high-voltage potential difference, gas molecules electrons and nuclei formed by thermal sublimation purification are separated through the wafer substrate, and the crystals therein are separated. A method for producing an epitaxy thin film of a metal organic material, characterized in that a body is obtained, mass is obtained, and the wafer substrate is sequentially and uniformly embedded to form an epitaxy thin film. The method of manufacturing an organic thin film of an organic metal material according to claim 1, wherein the wafer substrate employs an organic metal,
For example, an epitaxial thin film manufacturing method of a metal organic material, which is a silicon element crystal rod such as aluminum oxide, aluminum nitride, aluminum arsenide, and gallium nitride.   2. The method for producing an organic thin film of metal organic material according to claim 1, wherein an ultra-vacuum environment of the vacuum step is minus 2 atm. In epitaxy thin film manufacturing method of the metal organic material according to claim 1, wherein the strong acid substance is characterized by employing the osmium tetroxide (O _s O _4), epitaxy thin film manufacturing method of the metal-organic.   2. The method for producing an organic thin film of metal organic material according to claim 1, wherein the high pressure applied during the combustion step is 140,000 volts and 10 mA. The method of manufacturing a metal organic matter epitaxy thin film according to claim 1, wherein a duration of instantaneous combustion in the forming step is determined according to a size of a wafer,
If the wafer is 2 inches, the instantaneous burn lasts 16 seconds,
If the wafer is 4 inches, the instantaneous burning is continued for 30 seconds.

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