JP2013115274A - Method of manufacturing semiconductor device, development device, and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which suitably removes reaction products produced through reaction between a photoresist and a developer in a short time without damaging a resist pattern in a development process of the photoresist formed on an organic antireflective film.SOLUTION: In a method of manufacturing a semiconductor device, a development process of a photoresist forms a resist pattern through: a first step of performing development using a developer and removal of the developer; and a second step of performing development using a developer and removal of the developer after the first process.

Description

  The present invention relates to a photolithography process mainly used for forming a device circuit in a method for manufacturing a semiconductor device.

  In recent years, the progress of downsizing, thinning, and weight reduction of electronic devices including portable terminal devices has been remarkable. Accordingly, semiconductor devices mounted on these electronic devices are also demanded to have a higher degree of integration. A highly integrated small semiconductor device is usually manufactured by transferring a circuit pattern onto a semiconductor substrate using a photolithographic technique, and repeatedly removing a film to be processed (etching) and implanting impurities (ion implantation).

  In the manufacture of semiconductor devices, with the miniaturization of wiring, the required dimensional accuracy of required semiconductor elements has become stricter. The influence of reflection from steps due to element isolation and multilayer wiring, and the film to be processed at the wavelength of the exposure light source On the other hand, the influence of the standing wave effect when the reflectance is high cannot be ignored. Therefore, a method of realizing low reflection by interposing an antireflection film between the film to be processed and the photoresist and canceling the incident wave and the reflected wave from the light source is widely used.

  As the material of the antireflection film, an inorganic antireflection film formed by plasma CVD or sputtering technology such as a SiON film, a SiN film, or a TiN film, and an organic solvent in which a thermosetting agent or a light absorbing material is mixed in an organic solvent. An antireflection film (hereinafter, organic BARC) is used.

  Organic BARC is advantageous in terms of equipment cost and throughput in forming an antireflection film because its material can be mounted on a coating type developing device in an exposure equipment. However, when organic BARC is used, a defect generated in the resist removal portion is a problem. This defect will be described.

  4 (a) to 4 (d) are cross-sectional views of main parts showing the process of developing a conventional photoresist. A process in a development process after a latent image of a circuit pattern is formed on the photoresist 4 by exposure is shown.

  On the etching target film 2 of the semiconductor substrate 1 fixed by the spin chuck 7, a lower layer made of an organic BARC 3 is provided, and a photoresist 4 is provided thereon. First, an alkaline developer 5 is discharged from the developer nozzle 6 to the photoresist 4 while rotating the semiconductor substrate 1 (FIG. 4A). As development proceeds, the photoresist 4 is dissolved (FIG. 4B), and a resist pattern is formed. While rotating the semiconductor substrate 1, pure water is discharged from the rinse liquid nozzle 10 to stop development (FIG. 4C).

  Here, in the process in which the photoresist 4 is dissolved, the developer 5 and the photoresist 4 react to form a polymer component colloid, which gels and forms a solidified reaction product 9 (FIG. 4 ( b)). Usually, as shown in FIG. 4C, the reaction product 9 is removed from the semiconductor substrate 1 by cleaning with pure water 8 and does not cause defects. However, when the organic BARC 3 is used in the lower layer of the photoresist 4, the adhesion between the organic BARC 3 and the reaction product 9 cannot be strongly removed and remains on the organic BARC as shown in FIG. . Therefore, it becomes a mask material for etching performed in the process after the development process, and causes a decrease in yield due to abnormal characteristics of the semiconductor device.

JP 2010-182826 A Japanese Patent Laid-Open No. 2005-210059 JP-A-2005-236106 JP 2004-335654 A

  Here, in order to remove the reaction product 9 remaining on the semiconductor substrate 1, it is effective to extend the rinse with pure water for about 10 hours. However, the extension of the rinsing is a factor that causes a deterioration in productivity due to an increase in throughput and a collapse of the resist pattern formed by the photoresist 4. Further, it is effective to extend the etching time of the organic BARC 3 in the etching process after development. However, since the etching speed is the same as that of the photoresist 4 which is also an organic film, if the etching time of the organic BARC 3 is extended, the resist pattern disappears or the shape deteriorates when the etched film 2 is etched. As a result, for example, a shape abnormality of the film to be etched 2 such as a wiring or a characteristic abnormality due to insufficient impurity implantation is caused, which causes a characteristic abnormality of the semiconductor device.

  Further, for example, there are those in which the dropping of the developer and the cleaning with pure water are performed a plurality of times (for example, Patent Documents 1 and 2), but none of the conventional techniques can appropriately and effectively remove the reaction product 9. .

  Therefore, the present invention has been made in view of the above-described problems, and the object thereof is a reaction product generated by a reaction between a photoresist and a developer in a lithography process of a photoresist on an organic antireflection film. Is to provide a method for properly removing the resist pattern in a short time without damaging the resist pattern.

  In order to solve the above problems, a method for manufacturing a semiconductor device according to the present invention forms a resist pattern by performing exposure processing and development processing on a photoresist formed on a lower layer made of an organic material on a semiconductor substrate. In the method of manufacturing a semiconductor device, the development process includes a first step of developing using a developer and removing the developer, and a developing step using the developer and removing the developer after the first step. And performing the second step, and forming the resist pattern by the second step.

  According to the above method, most of the photoresist other than the portion that becomes the resist pattern can be removed by the first step. In the second step, a fine unnecessary portion of a portion that becomes a resist pattern including a reaction product generated by a reaction between the photoresist attached to the organic material and the developer can be removed, and the line width can be reduced. The resist pattern can be formed stably.

  As described above, the development using the developer and the removal of the developer are performed twice in the first step and the second step, and the conditions in each step are appropriately adjusted, so that the semiconductor device can be manufactured in a short time. A resist pattern made of a photoresist on an organic material (organic antireflection film) which is indispensable for circuit dimension control can be formed with high definition. In addition, since the resist pattern can be formed with high definition, it is possible to suppress shape abnormality in processing after the resist pattern is formed. Therefore, the pattern accuracy after the development process is improved.

  Therefore, according to the above method, the reaction product generated by the reaction between the photoresist and the developer can be appropriately removed in a short time without damaging the resist pattern. As a result, a high-performance semiconductor device in which characteristic abnormality is suppressed can be manufactured with a high yield without reducing the production capacity.

  In addition to the above method, the method for manufacturing a semiconductor device according to the present invention may be such that the development time in the first step is an interface between the photoresist and the organic material after the dissolution of the photoresist is started. It may be a time obtained by adding an over time that is in a range of −50% to 100% of the arrival time to the arrival time that is a time until the time reaches the time.

  If the development time is long, the dissolution of the photoresist is too advanced, and a highly accurate resist pattern cannot be formed. On the contrary, a resist pattern with high accuracy cannot be formed even if the development time is insufficient. However, according to the above method, the development time in the first step is the time obtained by adding the over time in the range of −50% to 100% of the arrival time to the arrival time. It can be performed. Therefore, a highly accurate resist pattern can be formed.

  In addition to the above-described method, the method for manufacturing a semiconductor device according to the present invention may be performed by removing the developer in the first step on the photoresist while rotating the semiconductor substrate at a rotation speed of 500 rpm or more. You may carry out by discharging water for 10 seconds or more.

  According to the above method, the developer is removed by discharging pure water over the entire semiconductor substrate by discharging the pure water onto the photoresist for 10 seconds or more while rotating the semiconductor substrate at a rotation speed of 500 rpm or more. And dissolution by the developer can be effectively stopped. Therefore, the development in the first step can be performed effectively, which can contribute to the suppression of problems caused by the reaction product.

  In addition to the above method, the semiconductor device manufacturing method according to the present invention, in the development in the first step, discharges the developer onto the photoresist while rotating the semiconductor substrate at a rotation speed of 1000 rpm or more. Thereafter, the semiconductor substrate may be rotated at a rotation speed equal to or lower than the number of rotations at which the developer is held on the photoresist, or the rotation may be stopped.

  According to the above method, the developer can be uniformly distributed on the photoresist by discharging the developer onto the photoresist while rotating at a rotation speed of 1000 rpm or more. Thereafter, the development is advanced by lowering the rotation speed or stopping the rotation. Therefore, the development in the first step can be performed effectively, which can contribute to the suppression of problems caused by the reaction product.

  In addition to the above-described method, the method for manufacturing a semiconductor device according to the present invention may be performed by removing the developer in the second step on the photoresist while rotating the semiconductor substrate at a rotation speed of 500 rpm or more. You may carry out by discharging water for 30 seconds or more. It is preferable to remove the developer in the second step under these conditions in order to remove the reaction product in a short time without damaging the resist pattern.

  In order to solve the above problems, a developing device according to the present invention moves a developer nozzle for discharging a developer and the developer nozzle onto the photoresist in the developing device for developing the photoresist. A moving arm and a rinsing liquid nozzle that discharges a rinsing liquid for removing the developing solution, and the rinsing liquid nozzle is installed on the moving arm and is moved onto the photoresist together with the developing solution nozzle. It is characterized by that.

  In order to remove the reaction product generated by the reaction between the photoresist and the developer, it is effective to perform the development using the developer and the removal of the developer twice, and the time for the development and the removal of the developer is effective. It is preferable to carry out fine control. Therefore, according to the above configuration, both the developer nozzle and the rinse liquid nozzle can be moved onto the photoresist by the developer nozzle moving arm, so that cleaning with the rinse liquid after development is performed quickly, that is, the development time is finely adjusted. Can be controlled. Therefore, according to the said structure, the image development apparatus which can be used for the manufacturing method of the semiconductor device concerning this invention can be provided. That is, by using the developing device having the above-described configuration, a reaction product generated by the reaction between the photoresist and the developer can be appropriately removed in a short time without damaging the resist pattern.

  A semiconductor device according to the present invention is manufactured by the method for manufacturing a semiconductor device according to the present invention.

  According to the above configuration, a high-performance semiconductor device in which characteristic abnormality is suppressed can be provided.

  In the method of manufacturing a semiconductor device according to the present invention, as described above, the development processing uses a developer using a developer and a developer after the first step of developing and removing the developer. A second step of developing and removing the developer, and the resist pattern is formed by the second step.

  According to the above method, most of the photoresist other than the portion that becomes the resist pattern can be removed by the first step. In the second step, a fine unnecessary portion of a portion that becomes a resist pattern including a reaction product generated by a reaction between the photoresist attached to the organic material and the developer can be removed, and the line width can be reduced. The resist pattern can be formed stably.

  As described above, the development using the developer and the removal of the developer are performed twice in the first step and the second step, and the conditions in each step are appropriately adjusted, so that the semiconductor device can be manufactured in a short time. A resist pattern made of a photoresist on an organic material, which is indispensable for circuit dimension control, can be formed with high definition. In addition, since the resist pattern can be formed with high definition, it is possible to suppress shape abnormality in processing after the resist pattern is formed. Therefore, the pattern accuracy after the development process is improved.

  Therefore, according to the above method, the reaction product generated by the reaction between the photoresist and the developer can be appropriately removed in a short time without damaging the resist pattern. As a result, a high-performance semiconductor device in which characteristic abnormality is suppressed can be manufactured with a high yield without reducing the production capacity.

It is a flowchart which shows each process of the manufacturing method of the semiconductor device of this embodiment. FIG. 2A is a plan view illustrating an outline of the developing device of the present embodiment, and FIG. 2B is a cross-sectional view illustrating an outline of a developer moving arm and each nozzle included in the developing device of the present embodiment. (A) is a graph showing the relationship between the space width of the resist pattern and the number of defects, (b) is a graph showing the relationship between the development time and the number of defects caused by the reaction product 9, c) is a graph showing the relationship between the amount of development time over and the number of defects; (d) is a graph showing the relationship between the number of rotations of the semiconductor substrate and the number of defects during liquid immersion; and (e) the semiconductor substrate. It is a graph which shows the relationship between the discharge time of a pure water, and the number of defects when changing the rotation speed of this. (A)-(d) is sectional drawing of the principal part which shows the process of the development processing of the conventional photoresist. It is a top view which shows the outline of the conventional developing device.

  The embodiment of the present invention will be described below with reference to FIGS.

(Method for manufacturing semiconductor device)
FIG. 1 shows a development processing flow in the semiconductor device manufacturing method of the present embodiment. After the exposure processing of the photoresist 4 formed on the semiconductor substrate 1 made of Si, GaAs or the like with the organic BARC (organic material) 3 as a lower layer, first, development is performed on the photoresist 4 in Step 1 (S1). A developer solution for applying the solution is applied (see FIG. 4A). S1 is the first developer solution.

  Next, in S2, development is performed while the developer 5 is held on the photoresist 4 (see FIG. 4B). S2 is the first development. In S3, the developing solution 5 on the photoresist 4 is removed using a rinsing solution. It is preferable to use pure water 8 as the rinse liquid. S3 is the first developer removal. These processes from S1 to S3 are defined as a first step.

  After the first step, in step S4, a developer solution for applying a developer solution is further applied on the photoresist 4. S4 is the second developer solution. In step S5, development is performed, and in step S6, the developer 5 is removed using a rinse solution. It is preferable to use pure water 8 as the rinse liquid. S5 is the second development, and S6 is the second developer removal. These processes from S4 to S6 are defined as a second step. After the second step, the semiconductor substrate 1 is rotated and dried in S7.

  As described above, in this embodiment, the first step of performing development (S1 and S2) using the developer and the developer removal (S3), and the development using the developer (S1 and S5) after the first step. And a second step of performing developer removal (S6).

  Here, the photoresist may be either a positive type or a negative type. Further, for example, it may be a KrF excimer laser photoresist or an ArF excimer laser photoresist. What is necessary is just to prepare for an exposure light source.

  Organic BARC does not dissolve in a developer and is formed by mixing a thermosetting agent or a light absorbing material in an organic solvent.

  Here, the developer used in the first step and the developer used in the second step are preferably the same alkaline developer and used at the same temperature. However, a different alkaline developer may be used.

  In the present embodiment, most of the photoresist 4 other than the portion that becomes the resist pattern can be removed by the first step. In the second step, fine unnecessary portions in the resist pattern including the reaction product 9 generated by the reaction between the photoresist 4 attached to the organic BARC 3 and the developing solution 5 can be removed, and the line width is stabilized. Thus, a resist pattern can be formed. Conventionally, development and developer removal (cleaning with pure water) are performed once to form a resist pattern.

  As described above, in this embodiment, the development of the developer 5 and the removal of the developer 5 are performed twice in the first step and the second step, so that the circuit dimensions of the semiconductor device can be obtained in a short time. A resist pattern made of the photoresist 4 on the organic BARC 3 that is indispensable for control can be formed with high definition. Moreover, since the photoresist 4 can be formed with high definition, it is possible to suppress shape abnormality in processing after the formation of the resist pattern. Therefore, the pattern accuracy after the development process is improved.

  Therefore, according to the manufacturing method of the semiconductor device of the present embodiment, the reaction product 9 generated by the reaction between the photoresist 4 and the developer 5 can be appropriately removed in a short time without damaging the resist pattern. As a result, a high-performance semiconductor device in which characteristic abnormality is suppressed can be manufactured with a high yield without reducing the production capacity.

  Further, as can be seen from the examples described later, the development time in the first step, that is, the time required for S1 and S2, is the time when the dissolution of the photoresist 4 is started by spilling the developer 5. It is preferable to add the over time which is in the range of −50% to 100% of the arrival time to the arrival time which is the time until dissolution reaches the interface between the photoresist 4 and the organic BARC 3.

  If the development time is long, the dissolution of the photoresist 4 proceeds excessively, and a highly accurate resist pattern cannot be formed. On the contrary, a resist pattern with high accuracy cannot be formed even if the development time is insufficient. However, when the development time in the first step is the time obtained by adding the overtime that is in the range of −50% to 100% of the arrival time to the arrival time, it is possible to perform development with little excess or shortage. Therefore, a highly accurate resist pattern can be formed.

  Further, as can be seen from the examples described later, the removal of the developer 5 in the first step (S3) is performed by adding pure water to the photoresist 4 for 10 seconds or more while rotating the semiconductor substrate 1 at a rotation speed of 500 rpm or more. It is preferable to carry out by discharging.

  By performing S3 in this way, pure water can be evenly distributed over the entire semiconductor substrate 1, and development (dissolution) by the developer 5 can be effectively stopped. Therefore, the first development can be performed effectively, which can contribute to the suppression of problems caused by the reaction product 9.

  Further, as can be seen from the examples described later, in the first step, in S1, the developer 5 is discharged onto the photoresist 4 while rotating the semiconductor substrate 1 at a rotation speed of 1000 rpm or more, and then 0.5 seconds. It is preferable to discharge the developer 5 onto the photoresist 4 while rotating the semiconductor substrate 1 at a rotation speed of 30 rpm to 200 rpm for 2 seconds from 1 second. In S <b> 2, the semiconductor substrate 1 is preferably rotated (or stopped) at a rotation speed equal to or lower than that at which the developer 5 is held on the photoresist 4. By performing S1 as described above, the developer 5 can be evenly distributed over the photoresist 4. In S2, the development proceeds by lowering the rotation speed or stopping the rotation. Therefore, development in the first step can be performed effectively, which can contribute to the suppression of problems caused by the reaction product 9.

  The total development time in the first step and the second step is desirably 30 seconds or more. Line width control can be suitably performed when the total development time is reached. In the present embodiment, the development time refers to the time from the start of liquid fog to the start of the removal of the developer 5 (pure water cleaning). Therefore, the total development time is the time required for S1 + S2 + S4 + S5.

  Further, the rotation speed during development in the second step is preferably 500 rpm. Moreover, if the pure water rinse time in the second step is, for example, at a rotation speed of 500 rpm for 60 seconds or longer, the reaction product 9 can be suitably removed.

  Further, as can be seen from the examples described later, in S4, the developer 5 is discharged onto the photoresist 4, for example, for 1 second (or 0.7 seconds) while rotating the semiconductor substrate 1 at a rotation speed of 60 rpm or more. It is preferable to do this. In S5, it is preferable to rotate the semiconductor substrate 1 at a rotation speed equal to or lower than the number of rotations at which the developer 5 is held on the photoresist 4, or to stop the rotation. Further, it is preferable that pure water is discharged on the photoresist 4 for 30 seconds or more while the semiconductor substrate 1 is rotated at a rotation speed of 500 rpm or more for the removal of the developer in S6. Performing the second step (S4 to S6) under these conditions is preferable for removing the reaction product in a short time without damaging the resist pattern.

  Since the semiconductor device manufactured by the semiconductor device manufacturing method of this embodiment is formed using a high-definition resist pattern, it becomes a high-performance semiconductor device in which characteristic abnormality is suppressed.

(Configuration of developing device)
Next, the configuration of the developing device used in the method for manufacturing a semiconductor device of this embodiment will be described.

  As shown in FIG. 2A, in the developing device 20 of the present embodiment, the developing solution nozzle 6 that discharges the developing solution and the rinsing solution nozzle 16 that discharges the rinsing solution that cleans the developing solution are the same developing solution. It is installed on the nozzle moving arm 15, and both are moved onto the semiconductor substrate 12 (semiconductor substrate 1) by the developer nozzle moving arm 15. As shown in FIG. 2B, the developer nozzle moving arm 15 is fixed at a fixed position (position before moving onto the semiconductor substrate 12), as shown in FIG. 2B. A portion 18 is provided.

  Further, the developing device 20 has a developing cup 11 that is installed under the semiconductor substrate 12 and receives the discharged liquid. Within the development cup 11, the semiconductor substrate 12 is rotatably fixed by a spin chuck. The spin chuck is connected to a rotating shaft and a motor that rotates the rotating shaft. The motor is controlled by the control unit so that the rotational speed of the rotating shaft, that is, the rotational speed of the semiconductor substrate 12 can be adjusted.

As described above, in order to realize the development processing (S1 to S6) of the present embodiment, it is essential to control the time of pure water cleaning for removing the developer used for the first development and development. This is because the development time for the first time may be several seconds due to the improvement in resist performance and the thinning of the resist that accompany miniaturization. Here, in the conventional developing device 30, as shown in FIG. 5, the developing solution nozzle 6 and the rinsing solution nozzle 10 are controlled by individual moving arms (the developing solution nozzle moving arm 15 and the rinsing solution nozzle moving arm 13). Each liquid was discharged on the semiconductor substrate so as not to interfere with each other. Therefore, pure water treatment at intervals of several seconds is difficult due to the mechanism.

  However, in the developing device 20 of the present embodiment, the developing solution nozzle 6 and the rinsing solution nozzle 16 are installed on the same developing solution nozzle moving arm 15. Therefore, both the developing solution nozzle 6 and the rinsing solution nozzle 16 can be moved onto the photoresist of the semiconductor substrate 12 by the developing solution nozzle moving arm 15. That is, the movement time of the rinse liquid nozzle can be shortened. Therefore, it is possible to quickly perform cleaning with the rinse solution after development, that is, to finely control the development time. Therefore, by using the developing device 20, the reaction product 9 generated by the reaction between the photoresist 4 and the developer 5 can be appropriately removed in a short time without damaging the resist pattern.

(Examples and Comparative Examples)
In each of the following examples and comparative examples, a KrF excimer laser (249 nm) was used as an exposure light source, and an acetal positive resist was used as the material of the photoresist 4. As the developer 5, a tetramethylammonium aqueous solution (TMAH) was used, and a wiring process of 0.35 μm was performed.

(Comparative Example 1)
FIG. 3A shows the space width of the resist pattern and the number of defects (number of defects) caused by the reaction product 9 when development using the developer and removal of the developer are performed only once. It is a graph which shows the relationship of. In this case, the liquid was deposited for 1 second at a rotation speed of the semiconductor substrate 1 of 60 rpm, and the development was performed at a rotation speed of 0 rpm for the semiconductor substrate 1 and the overdevelopment time was 52 seconds. Thereafter, the developer was removed by discharging pure water for 60 seconds at a rotation speed of the semiconductor substrate 1 of 500 rpm.

  From FIG. 3A, it can be seen that the number of defects is increased in the coarse pattern having a large resist removal area.

(Comparative Example 2)
FIG. 3B is a graph showing the relationship between the development time and the number of defects caused by the reaction product 9 when the development using the developer and the removal of the developer are performed only once. . The conditions for liquid build-up and developer removal are the same as in Comparative Example 1.

  From FIG. 3 (b), it can be seen that the longer the development time, the larger the number of defects and the more the reaction product 9 sinks. On the other hand, in order to suppress the line width stability of the resist pattern and the occurrence of defects due to insufficient dissolution, generally development for 30 seconds or more is required. Therefore, in evaluating the effects of the method for manufacturing a semiconductor device according to the present invention, in the following examples, the first and second development times were fixed to 60 seconds in total. The pattern to be evaluated had a line width of 0.35 μm and a space width of 350 μm.

  In the following examples, after the development using the first developer and the removal of the developer, the development using the second developer and the removal of the developer were performed.

Example 1
FIG. 3C is a graph showing the relationship between the over time of the development time and the number of defects caused by the reaction product 9. The X axis shows the amount of overshoot relative to the arrival time from the start of dissolution of the photoresist 4 by the first development (S2) until the dissolution reaches the interface between the photoresist 4 and the organic BARC 3 by the first development (S2). (%). That is, the over amount is 0% in the arrival time. In the graph of FIG. 3C, the development time when the X-axis over amount is 50% is obtained by adding 50% of the arrival time (over time) to the arrival time. That is, when the arrival time is 10 seconds, the development time when the over-axis amount of the X axis in FIG. 3C is 100% is 10 + 10 × 100% = 20 seconds. The developing time when the X-axis over amount is −50% (in other words, the under amount is 50%) is 10 + 10 × (−50%) = 5 seconds.

  From FIG. 3 (c), it is effective that the development time in the first development is the arrival time plus an over time that is in the range of −50% to 100% of the arrival time. I understand. That is, it can be seen that it is effective to start the first developer removal (S3) at a time obtained by adding the overtime in the above range to the arrival time.

  In the first embodiment, in the first liquid accumulation (S1), after the developer 5 is discharged for 1 second at a rotational speed of the semiconductor substrate 1, the semiconductor substrate 1 is rotated at a rotational speed of 60 rpm. The developer 5 was discharged for 7 seconds. Thereafter, the first development (S2) was performed at a rotation speed of the semiconductor substrate 1 of 0 rpm. The first rinsing time with pure water was 10 seconds, and the processing rotation speed was 1000 rpm. The overdevelopment amount 0% in Example 1 was 8 seconds.

  The second liquid deposition is performed for 1 second at a rotation speed of the semiconductor substrate 1 of 60 rpm, and the second development is performed at a rotation speed of 0 rpm of the semiconductor substrate 1 and the development time is the total development time with the first development. For 60 seconds. Further, the removal of the developer for the second time was performed by discharging pure water for 30 seconds at a rotation speed of 500 rpm of the semiconductor substrate 1.

(Example 2)
FIG. 3D is a diagram showing the relationship between the number of rotations of the semiconductor substrate 1 and the number of defects caused by the reaction product 9 during the first liquid flooding (S1). The developing solution liquid for the first time was rotated while discharging the developing solution for about 1 second, and thereafter the development was carried out at a low speed enough to hold the developing solution 5 on the semiconductor substrate 1.

  From FIG. 3D, it can be seen that the dissolved solution containing the reaction product 9 is removed and the number of defects is reduced by increasing the rotational speed.

  In Example 2, the first over-development time was 100%, the first rinsing time was 10 seconds, and the processing speed was 1000 rpm. Other conditions were the same as in Example 1 above. The conditions for the second liquid accumulation, development, and developer removal were the same as in Example 1 above.

(Example 3)
FIG. 3E shows defects caused by the number of rotations of the semiconductor substrate 1, the discharge time of pure water (cleaning time, rinse time), and the reaction product 9 in the first developer removal (S3). It is a graph which shows the relationship with a number. It can be seen from FIG. 3 (e) that the number of revolutions is stable at 500 rpm or more and the discharge time of pure water is 10 seconds or more. In Example 3, a condition was adopted in which the rotation speed at the first liquid drip was 1000 rpm and the first overdevelopment time was 100%. Other conditions were the same as in Example 1 above.

  The conditions for the second liquid spill, development, and developer removal were the same as in Example 1 above.

  The discharge amount of pure water used in Examples 1 to 3 was set to 1 L / min. Although it is more qualitatively more advantageous, there is a concern that the resist pattern may collapse, but there is no limitation, but for example, 0.8 to 1.2 L / min is preferable.

Example 4
FIG. 3F shows defects caused by the number of rotations of the semiconductor substrate 1, the discharge time of pure water (cleaning time, rinse time), and the reaction product 9 in the second removal of the developer (S6). It is a graph which shows the relationship with a number. FIG. 3 (f) shows that the effect is high (defects are reduced) when the rotational speed is 500 rpm or more and the discharge time of pure water is 30 seconds or more.

  In Example 4, the over amount was set to 100% in the first development. Other conditions for the first liquid accumulation, development, and developer removal were the same as those in Example 1 above.

  The conditions for the second liquid accumulation, development, and developer removal were the same as those in Example 1 except for the second pure water discharge time and rotation speed.

  The present invention is not limited to the above-described embodiments, and various modifications can be made. That is, embodiments obtained by combining technical means appropriately changed within the scope not departing from the gist of the present invention are also included in the technical scope of the present invention.

  The present invention is useful for a method for manufacturing a semiconductor device in which a resist pattern is formed by performing exposure processing and development processing on a photoresist.

DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 2 Film to be etched 3 Organic antireflection film (organic BARC, organic material)
4 Photoresist 5 Developer 6 Developer nozzle 7 Spin chuck 8 Pure water 9 Reaction product 10 Rinse solution nozzle 11 Processing cup 12 Semiconductor substrate 13 Rinse solution nozzle moving arm 15 Developer nozzle moving arm (moving arm)
16 Rinsing liquid nozzle (rinsing liquid nozzle)
17 Developer drain part 18 Rinse drain part

Claims (7)

In a method for manufacturing a semiconductor device in which a photoresist formed on a lower layer made of an organic material on a semiconductor substrate is exposed to light and developed to form a resist pattern.
The development processing includes a first step of developing with a developer and removing the developer, and a second step of developing with the developer and removing the developer after the first step. ,
The method of manufacturing a semiconductor device, wherein the resist pattern is formed by the second step.   The development time in the first step is −50 of the arrival time, which is the arrival time from the start of dissolution of the photoresist until the dissolution reaches the interface between the photoresist and the organic material. 2. The method of manufacturing a semiconductor device according to claim 1, wherein an over time in a range of% to 100% is added.   The removal of the developer in the first step is performed by discharging pure water onto the photoresist for 10 seconds or more while rotating the semiconductor substrate at a rotation speed of 500 rpm or more. A method for manufacturing a semiconductor device according to 1 or 2.   In the development in the first step, the developer is discharged onto the photoresist while rotating the semiconductor substrate at a rotation speed of 1000 rpm or more, and then the semiconductor substrate is removed for 0.5 to 2 seconds. The developer is discharged onto the photoresist while rotating at a rotation speed of 30 rpm to 200 rpm, and the semiconductor substrate is rotated at a rotation speed equal to or lower than the rotation speed at which the developer is held on the photoresist, or the rotation is stopped. The method for manufacturing a semiconductor device according to claim 1, wherein:   The removal of the developer in the second step is performed by discharging pure water onto the photoresist for 30 seconds or more while rotating the semiconductor substrate at a rotation speed of 500 rpm or more. 5. A method for manufacturing a semiconductor device according to any one of 1 to 4. In a developing device for developing a photoresist formed on a semiconductor substrate,
A developer nozzle for discharging the developer;
A moving arm that moves the developer nozzle onto the photoresist;
A rinsing liquid nozzle for discharging a rinsing liquid for removing the developer,
The developing device, wherein the rinsing liquid nozzle is installed on the moving arm and is moved onto the photoresist together with the developing liquid nozzle.   A semiconductor device manufactured by the manufacturing method according to claim 1.

Images