JP2013110152A - Method for manufacturing semiconductor light-emitting device, and cleaning method with plasma - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for effectively removing a contamination such as organopolysiloxane which originates from a die bonding paste deposited on an electrode in manufacturing a semiconductor light-emitting device.SOLUTION: The method for manufacturing a semiconductor light-emitting device comprises the steps of: fixing a semiconductor light-emitting element having at least one electrode on a surface thereof to a mounting board having at least one electrode circuit on a surface thereof by means of a silicone-containing die bonding paste; curing the die bonding paste by heating the mounting board with the semiconductor light-emitting element mounted thereon; performing plasma processing for cleaning the mounting board with the semiconductor light-emitting element fixed thereon by means of plasma of a mixed gas containing argon and fluorocarbon after the curing of the die bonding paste; and connecting between the at least one electrode and the electrode circuit by wire bonding after the plasma processing.

Description

  The present invention relates to a method for manufacturing a semiconductor light emitting device having a plasma processing step capable of effectively removing contaminants such as organopolysiloxane derived from a die bonding paste containing silicone that adheres to the electrode surface of a semiconductor light emitting element.

  Conventionally, in the manufacture of a semiconductor light emitting device, a semiconductor light emitting element is fixed on a mounting substrate with a die bonding paste, the die bonding paste is thermally cured, and an electrode provided on the surface of the semiconductor light emitting element is then mounted on the mounting substrate. Connect to the electrode circuit. As a method of connecting the electrode provided on the surface of the semiconductor light emitting element to the electrode circuit on the mounting substrate, for example, wire bonding in which the electrode and the electrode circuit are connected by a thin metal wire such as a gold wire is widely used.

  In order to improve the light emission efficiency of the semiconductor light emitting device, high heat dissipation is required. Conventionally, as a die bonding paste, an epoxy die bonding paste mainly composed of an epoxy resin has been widely used. However, in recent years, the use of silicone die bonding paste, which has better heat dissipation than epoxy die bonding paste, has become the mainstream due to demands for improving heat dissipation.

  Silicone die bonding paste is excellent in heat dissipation, but has the following technical problem. That is, when heated when curing the silicone die bonding paste, a part of the silicone resin or a decomposition product thereof is vaporized and adheres to the surface of the electrode of the semiconductor light emitting element and the surface of the electrode circuit on the mounting substrate, Generates contaminants such as organopolysiloxanes. Such contaminants are preferably removed because the connection strength is reduced and the electrical resistance is reduced when the electrodes are connected by wire bonding.

  Incidentally, a metal oxide film contained in the electrode is formed on the surface of the electrode of the semiconductor light emitting device. Such a metal oxide film is known to reduce connection strength by wire bonding using a thin metal wire. Therefore, Patent Document 1 proposes to treat the electrode surface with argon plasma before wire bonding in order to remove such a metal oxide film. Thereby, the metal oxide film formed on the electrode surface can be removed.

Conventionally, a technique for intentionally forming an organopolysiloxane film for the purpose of imparting water repellency and lubricity to the surface of a substrate has been widely known. Such a film is, for example, accommodated in a chamber of a film forming apparatus, and after introducing an organosiloxane monomer into the chamber from a gas introduction tube, it is turned into plasma and adhered to the surface of the substrate. It is formed by the method. In such a method, there is a problem that an organopolysiloxane film is formed not only on the surface of the substrate but also in the chamber, thereby contaminating the chamber. Therefore, as a method of removing the organopolysiloxane film contaminating the chamber, Patent Document 2 discloses that after oxidizing the organopolysiloxane film deposited in the chamber with oxygen plasma, CF ₄ , C ₂ F ₆ , It has been proposed that a fluorine-based gas such as C ₄ F ₈ is introduced into the chamber to turn the fluorine-based gas into plasma. Thereby, the pre-oxidized organopolysiloxane is efficiently removed.

Japanese Patent Laid-Open No. 11-204828 JP 2005-272902 A

  As proposed in Patent Document 1, organopolysiloxane derived from a die bonding paste attached to an electrode can be removed by a method of treating the electrode surface with argon plasma. However, the treatment with argon plasma is a physical etching treatment in which ions and the like generated by plasma formation collide with the electrode surface. For this reason, when the treatment is performed with a low plasma power, the organopolysiloxane is decomposed into molecules having a lower vapor pressure, so that it is difficult to remove contaminants. On the other hand, when processing is performed with high plasma power, for example, the metal that forms the electrode is etched, and the metal adheres to the mounting substrate and the semiconductor light emitting element.

  One goal of improving the performance of semiconductor light emitting devices is to obtain higher brightness. Therefore, the surface of the mounting substrate is designed to have high reflectivity so that more emitted light from the semiconductor light emitting element can be extracted to the outside. In such a case, if the metal forming the electrode is etched and adheres to the surface of the mounting substrate having high reflectivity, the reflectivity is lowered and the light extraction efficiency is lowered. Therefore, when the electrode surface is treated with argon plasma, it is usually treated with a low plasma power. However, in that case, the organopolysiloxane on the electrode surface is decomposed into molecules having a low vapor pressure, making it difficult to remove them sufficiently.

Further, as disclosed in Patent Document 2, organopolysiloxane can be removed even in an atmosphere in which a fluorine-based gas such as CF ₄ , C ₂ F ₆ , or C ₄ F _{8 is} converted into plasma. However, the fluorine-based gas plasma is a chemical etching process and has a low physical collision energy, and thus has a problem that silicon oxide is likely to be deposited as a decomposition product of organopolysiloxane. In addition, contaminants containing fluorine may remain in the product due to the fluorine-based gas, which may reduce the reliability of the product. Furthermore, treatment with oxygen plasma is required in advance, but oxygen plasma oxidizes electrodes and the like and cannot be used in the manufacturing process of a semiconductor light emitting device.

  In view of the above situation, an object of the present invention is to provide a method for effectively removing contaminants such as organopolysiloxane derived from a die bonding paste attached to an electrode in the manufacture of a semiconductor light emitting device.

  One aspect of the present invention is a step of fixing a semiconductor light emitting device having at least one electrode on the surface with a die bonding paste containing silicone on a mount substrate having at least one electrode circuit on the surface; The step of curing the die bonding paste by heating the mount substrate mounted with the substrate, and the mount substrate on which the semiconductor light emitting element is fixed after the die bonding paste is cured, are mixed with a mixed gas containing argon and fluorocarbon. The present invention relates to a method for manufacturing a semiconductor light emitting device, comprising: performing a plasma process for cleaning with plasma; and connecting the at least one electrode and the electrode circuit by wire bonding after the plasma process.

  Another aspect of the present invention is to cause ions in a plasma of a mixed gas containing argon and fluorocarbon to collide with a substrate to which an organosiloxane is adhered, and to react radicals in the plasma with a substance derived from the organosiloxane. The present invention relates to a cleaning method using plasma, in which at least a part of the organosiloxane is removed from the substrate.

  According to the production method of the present invention, it is possible to suppress the etching of the electrode as in the case of performing argon plasma treatment, and therefore, contaminants such as organopolysiloxane can be selectively removed. As a result, the surface of the mounting substrate is not contaminated as when treated with argon plasma, and contaminants attached to the electrode surface of the semiconductor light emitting device can be effectively removed. Further, due to the synergistic effect of the chemical reaction of radicals generated from fluorocarbon and physical etching by collision of argon ions, contaminants can be efficiently removed even under low plasma power conditions.

It is a schematic explanatory drawing explaining each process of the manufacturing method of the semiconductor light-emitting device concerning one Embodiment of this invention. It is a schematic diagram which shows the structure of the plasma cleaning apparatus for implementing a plasma processing. And the flow rate ratio of CF ₄ gas and Ar gas, which is a graph showing the relationship between the etching rate for Au or photoresist (Photo Resist) resin. 1 is a top view of a semiconductor light emitting device according to an embodiment of the present invention. It is a figure which shows the preparation process of the sample used in the simulation test for confirming the effect of this invention. It is sectional drawing of the sample which formed the bump used by shear strength evaluation. It is a graph which shows the result of the elemental analysis of the electrode surface of the sample manufactured by the mock test. It is a graph which shows the result of the shear strength of the bonding wire of the sample manufactured by the mock test.

An embodiment of the present invention will be described with reference to the drawings.
In the method for manufacturing the semiconductor light emitting device 10 of the present embodiment, as shown in FIG. 1A, first, the semiconductor light emitting element 2 having the element electrodes 1a and 1b on the surface is bonded to the die bonding paste 3 containing silicone. Fix to the surface of the mount substrate 6. The surface of the mount substrate 6 includes a mounting region 5a where the semiconductor light emitting element 2 is disposed and an electrode circuit. The electrode circuit includes substrate electrodes 4a and 4b that are insulated from each other, and these are connected to the device electrodes 1a and 1b, respectively.

  The type of the semiconductor light emitting element 2 is not particularly limited, but specifically, for example, a semiconductor light emitting element that emits light in a wavelength region such as visible light and infrared light is used without particular limitation. These can be made from a semiconductor material such as GaN, for example.

  The mount substrate provided with the electrode circuit is composed of a lead frame 4 and a resin portion 5 formed by resin molding. The lead frame 4 is a member that becomes the substrate electrodes 4a and 4b. The resin portion 5 is formed so as to sandwich the lead frame 4 vertically, and includes a reflection surface 5b formed on the upper portion thereof so as to surround the semiconductor light emitting element 2 fixed to the mounting region 5a. The surface of the reflecting surface is silver plated. Therefore, the light emitted from the semiconductor light emitting element 2 is reflected upward by the surface of the substrate electrodes 4a and 4b and the reflection surface 5b.

  The structure of the mounting substrate is not limited to the above-described metal lead frame and resin portion, but a laminated plate of prepreg and copper foil, a ceramic substrate such as an aluminum nitride substrate, or the like is used. be able to. The reflective surface 5b is not particularly limited, but may have a structure in which the surface of a white resin such as polyphenylphthalamide (PPA) is used as it is as a reflective surface in addition to the glossy metal plating.

  As the metal forming the substrate electrodes 4a and 4b as the electrode circuit, glossy silver or a silver alloy containing silver as a main component is preferably used. The electrode circuit is preferably formed over the entire region surrounded by the reflective surface except for the region that insulates the substrate electrodes 4a and 4b from the viewpoint of obtaining high luminance. Further, from the viewpoint of obtaining high brightness, it is preferable to perform silver plating on the surfaces of the substrate electrodes 4a and 4b.

  In the present embodiment, for example, as shown in FIG. 1A, after applying a die bonding paste 3 containing silicone to a predetermined position of the mount substrate 6, the semiconductor light emitting element 2 is fixed. The die bonding paste 3 is applied to a predetermined mounting position of the mount substrate using, for example, a dispenser.

  As the die bonding paste containing silicone, any thermosetting die bonding paste containing silicone can be used without any particular limitation. Silicone is a general term for polymers having a polysiloxane structure and containing organic groups. Such die bonding pastes are sold by, for example, Toray Dow Corning Co., Ltd. and Shin-Etsu Chemical Co., Ltd., and are commercially available.

  Next, the die bonding paste 3 is cured by heating the mount substrate 6 to which the semiconductor light emitting element 2 is fixed. The heating temperature is appropriately selected depending on the type of the die bonding paste, and specifically, it is preferably about 150 to 160 ° C., for example. Although a heating means is not specifically limited, For example, a batch type or in-line type curing apparatus is used. At this time, an inert gas such as nitrogen or argon is introduced into the heating atmosphere so that the electrode circuit or the like is not oxidized. When the electrode circuit includes silver or a silver alloy, when the electrode circuit is oxidized, the electrode circuit changes to black, so that the light emission efficiency of the semiconductor light emitting device decreases.

  As described above, the semiconductor light emitting element 2 is fixed to the mount substrate 6 by curing the die bonding paste 3. At this time, the unreacted material of silicone contained in the die bonding paste is vaporized by being decomposed. Then, it contacts with the device electrodes 1a and 1b formed on the surface of the semiconductor light emitting device 2 and the electrode circuit formed on the surface of the mount substrate 6, and condenses or reacts on the spot, and as a result, contamination such as organopolysiloxane occurs. It is thought that the thing is producing | generating.

  Next, as shown in FIG. 1B, plasma processing (plasma cleaning) is performed on the mount substrate 6 on which the semiconductor light emitting element 2 is fixed by plasma of a mixed gas containing argon and fluorocarbon. The plasma processing is performed in a processing space including an anode and a cathode connected to a high frequency power source. The processing space is decompressed by a decompression pump and a mixed gas that is converted into plasma at a predetermined flow rate is introduced.

In the plasma, argon ions (Ar ⁺ ) and fluorocarbon-derived radicals are generated. As shown in FIG. 1B, the positively charged argon ions are electrically attracted to the negatively charged cathode 12 and collide with the semiconductor light emitting element 2 and the mount substrate 6. The radicals react when they come into contact with contaminants such as organopolysiloxane, and generate a gas having a high vapor pressure. The gas having a high vapor pressure is exhausted to the outside by the action of the decompression pump. By this step, contaminants such as organopolysiloxane formed on the electrode surface and the like are removed. In this way, physical etching with argon ions and chemical etching with active species (radicals) derived from fluorocarbons cooperate. Thereby, it is suppressed that an electrode is etched like the case where only argon is used. A more detailed mechanism for removing contaminants will be described later.

The fluorocarbon can be used without particular limitation as long as it is a compound in which at least one hydrogen of a hydrocarbon is replaced with fluorine. Specific examples thereof include CF ₄ , C ₂ F ₆ , C ₃ F ₈ , and CHF _3. , CH ₂ F _{2 and the} like.

Here, an apparatus used for plasma processing will be described in detail with reference to FIG.
FIG. 2 is a schematic diagram showing the structure of the plasma cleaning device 20. The plasma cleaning apparatus 20 includes a processing chamber 11 that provides a space for generating plasma, and a support base 12 that also serves as a cathode and an anode 13 are provided opposite to each other below and above the processing chamber 11. Yes. The inside of the processing chamber 11 is connected to a gas supply unit 19 that supplies a mixed gas containing argon and fluorocarbon via a gas inlet 14. On the other hand, the inside of the processing chamber 11 is connected to a decompression pump 16 through a gas exhaust port 15. By operating the decompression pump 16, the inside of the processing chamber 11 is decompressed. When a high frequency voltage is applied between the anode 12 and the cathode 13 by the high frequency power supply 17 in a state where the gas is introduced into the processing chamber 11, the introduced gas is turned into plasma. Adjustment of the gas flow rate and the output of the decompression pump 16 is controlled by the control unit 18.

Hereinafter, the procedure of the plasma processing will be described.
In the plasma processing, first, a mounting substrate 6 on which a semiconductor light emitting element 2 as an object to be processed is fixed is placed on a support base 12 disposed in the processing chamber 11 from a hermetic door (not shown), Close the sealed door. Then, the decompression pump 16 is operated to introduce gas from the gas introduction port 14 while exhausting the air inside the processing chamber 11 from the gas exhaust port 15. In the present embodiment, a mixed gas containing argon and fluorocarbon (for example, CF ₄ ) is introduced as the introduced gas.

  From the gas supply device 19, argon and fluorocarbon previously adjusted to a predetermined flow rate may be mixed and introduced as a mixed gas from the gas inlet 14, and argon and fluorocarbon may be introduced from a plurality of inlets, respectively. It may be introduced individually while controlling the flow rate. In any case, argon and fluorocarbon are mixed inside the processing chamber 11.

  The flow rate ratio (molar flow rate ratio) of fluorocarbon supplied to the processing chamber 11 with respect to argon is preferably 10 to 40%, more preferably 20 to 40%, assuming that argon is 100%. The higher the argon ratio, the greater the influence of physical etching, and the electrode may be more easily etched. On the other hand, the lower the argon ratio, the smaller the influence of physical etching, which may make it difficult to remove contaminants such as organopolysiloxane or to deposit silicon oxide.

FIG. 3 is a graph showing the relationship between the flow rate ratio between CF ₄ and argon and the etching rate for Au or photoresist resin (PR). It shows that the higher the Au etching rate, the greater the influence of physical etching, and the higher the PR etching rate, the greater the influence of chemical etching. When argon is 100%, it can be understood that the effects of physical etching and chemical etching can be obtained in a well-balanced manner when the flow ratio of fluorocarbon is in the range of 10 to 40%.

  Next, a high frequency voltage is applied between the anode 12 and the cathode 13 by the high frequency power source 17 while controlling the internal pressure of the processing chamber 11 to an appropriate pressure, and the introduced argon and fluorocarbon are turned into plasma. For example, when “Plasma Cleaner PSX307” manufactured by Panasonic Factory Solutions Co., Ltd. is used as the plasma cleaning device, the internal pressure of the processing chamber 11 is preferably about 5 to 20 Pa, for example. Moreover, it is preferable that the power of a high frequency power supply is about 100-200W.

  Then, the plasma processing is completed by allowing a predetermined time to elapse while the mount substrate on which the semiconductor light emitting element is fixed is exposed to the plasma atmosphere. The plasma treatment time is preferably, for example, 5 to 20 seconds.

Next, the mechanism for removing contaminants will be considered.
Removal of contaminants such as organopolysiloxane is considered to be due to the following mechanism. Here, a case where CF ₄ is used as the fluorocarbon will be described as an example.

The introduced argon (Ar) is turned into plasma by a high-frequency voltage, and at that time, electrons (e −) and Ar ions are generated. In addition, CF _{4 is} also turned into plasma by a high frequency voltage to generate CF * (* represents a radical, the same applies hereinafter), CF ₂ *, CF ₃ *, CF ₄ *, and the like. Ar ions, together with CF * and the like, break the bond between Si-O of the organopolysiloxane by the principle of reactive ion etching (RIE (Reactive Ion Etching)). This mechanism is RIE by Ar ion assist, which is different from simple physical etching by argon plasma. Here, a synergistic effect of a chemical reaction between a radical generated from a fluorocarbon and a substance derived from an organopolysiloxane and physical etching by collision of argon ions is obtained. By such a mechanism, the organopolysiloxane is decomposed and removed as a substance having a high vapor pressure such as SiF ₄ . It is considered that oxygen in the siloxane bond is removed as a gas such as CO ₂ .

  Next, as shown in FIG. 1C, in the mount substrate 6 to which the semiconductor light emitting element 2 is fixed, which is plasma-treated, the element electrodes 1a and 1b and the substrate electrodes 4a and 4b are respectively connected to the gold wires 8a and 8b. Connect with. In the present embodiment, as a method for connecting the device electrodes 1a and 1b and the substrate electrodes 4a and 4b, a wire bonding method using gold wires is employed. In this way, the semiconductor light emitting element 2 and the mount substrate 6 are electrically connected.

  And the connection part formed as mentioned above is normally sealed and protected by a transparent resin 9 such as an epoxy resin or a silicone resin, as shown in FIG. Note that the transparent resin may include a phosphor for converting the emission color of the semiconductor light emitting element 2 by wavelength conversion, if necessary. A top view of the completed semiconductor light emitting device is shown in FIG.

  As described above, since the surface of each electrode is cleaned in an atmosphere in which a mixed gas of argon and fluorocarbon is turned into plasma, the connection strength between the element electrodes 1a and 1b or the substrate electrodes 4a and 4b and the gold wire is sufficiently high. Therefore, the reliability of the semiconductor light emitting device is also high. Therefore, even in the sealing step with the transparent resin, the gold wire is not cut and the production yield is increased.

  In the plasma treatment, as described above, the mounting substrate on which the semiconductor light emitting element is fixed is subjected to a treatment (first treatment) for cleaning with a mixed gas plasma of argon and fluorocarbon, and then further cleaned with argon plasma. You may perform the process (2nd process) to perform. By performing such a second treatment, it is possible to prevent contaminants containing fluorocarbon or fluorine from remaining on the semiconductor light emitting device or the mount substrate.

  Specifically, after finishing the first process, introduction of fluorocarbon into the process chamber is stopped, and introduction of argon and evacuation by a vacuum pump are continued. Then, argon is turned into plasma while adjusting the power of the high frequency power supply so that the electrode is not etched. The internal pressure of the processing chamber 11 during the second processing is preferably about 5 to 10 Pa, for example. Moreover, it is preferable that the power of a high frequency power supply is about 50-100W. Moreover, as processing time by argon plasma, 1 to 5 second is preferable, for example.

  Next, in order to confirm the effect of the present invention, the following simulation experiment was conducted. Specifically, the relationship between the plasma treatment time, the amount of contaminants due to the organopolysiloxane and the bonding performance was evaluated. In addition, the following experiment does not limit this invention at all.

Example 1
First, as shown to Fig.5 (a), the evaluation board | substrate 30 which gave the gold plating 30a to the printed circuit board (FR4) was prepared. Next, as shown in FIG. 5 (b), the substrate 30 is fixed above the hot plate 31 so that the gold plating 30 a faces the hot plate, and the silicone die bonding paste 32 is placed at two locations near the center of the hot plate 31. 1 mg each of KER-3000-M2 (manufactured by Shin-Etsu Silicone Co., Ltd.) was potted using a dispenser. Thereafter, the hot plate 31 was covered with the substrate 30 with the dome 33, the temperature of the hot plate 31 was set to 160 ° C., and the silicone die bonding paste 32 was heated for 2 hours. Through such a process, a predetermined amount of organopolysiloxane was intentionally adhered to the gold plating 30a of the substrate 30 as a contaminant in a sealed space.

And the plasma processing by the plasma of the mixed gas containing argon and fluorocarbon was performed with respect to the gold plating 30a of the board | substrate 30 with which the contaminant adhered. Here, the plasma cleaning apparatus 20 (“Plasma Cleaner PSX307” manufactured by Panasonic Factory Solutions Co., Ltd.) as shown in FIG. 2 was used. Specifically, the substrate 30 was placed on the support 12 serving as a cathode provided inside the processing chamber 11 having a capacity of 6 L via the hermetic door 18. Then, the hermetic door 18 was closed, the decompression pump 16 was operated, and argon and CF ₄ gas were introduced from the gas inlet 14 while exhausting the air inside the processing chamber 11 from the gas outlet 15.

The flow rate of argon was set to 10 mL / min, and the flow rate of CF ₄ was set to 3 mL / min. The internal pressure inside the processing chamber 11 was 10 Pa.
Then, while controlling the internal pressure of the processing chamber 11, a high frequency voltage was applied between the cathode 12 and the anode 13 by the high frequency power source 17, and the introduced mixed gas containing argon and fluorocarbon was turned into plasma. The power of the high frequency power source was 150W. The plasma treatment time was set to 5 seconds, 10 seconds, 20 seconds, 30 seconds and 60 seconds from the viewpoint of obtaining five types of samples.

The plasma-treated substrate 30 was taken out from the processing chamber 11. Next, as shown in FIG. 6, a bump 34 (diameter: about 73 μm, height: about 23 μm) is formed on the gold-plated surface of the plasma-treated substrate 30 from a bonding wire (gold wire) having a diameter of about 25 μm using a bonding machine. Formed.
The above sample production was repeated three times to obtain a total of 15 types of samples.
Next, the following evaluation was performed about the obtained sample.

[Elemental analysis]
The concentration ratio (Si / Au) of silicon (Si) to the concentration of gold (Au) on the gold plating surface was determined by X-ray photoelectron spectroscopy (XPS). The results are shown as a graph in FIG. In the graph, the indication “CF / Ar (n)” indicates the analysis result of the sample obtained in the n-th manufacturing. It can be understood that in the samples obtained in any one of the first to third productions, the silicon-containing impurities are removed by the plasma treatment for about 10 seconds. It can also be seen that the reproducibility of the effect of removing impurities is high.

[Bump share strength evaluation]
Shear strength evaluation was performed on the bumps 34 formed on the surface of the gold plating 30a on the substrate 30 using a PTR50 manufactured by RHESCA. The results are shown as a graph in FIG. A high shear strength is obtained by performing the plasma treatment for about 10 seconds. This is presumably because the impurities on the surface of the gold plating 30a were sufficiently removed.

<< Comparative Experiment Example 1 >>
A sample was manufactured by performing the same operation as in Experimental Example 1 except that only argon was introduced from the gas inlet 14 and no CF ₄ gas was introduced during the plasma treatment. The argon flow rate was set to 5 mL / min. The internal pressure inside the processing chamber 11 was 7 Pa. The power of the high frequency power source was 150W.
The above sample production was repeated three times to obtain a total of 15 samples of Comparative Experimental Example 1. Next, the obtained samples were evaluated in the same manner as in Experimental Example 1. The results are shown in FIGS. In the graph, the display of “Ar (n)” indicates the analysis result of the sample obtained in the n-th manufacturing.

  In Comparative Experimental Example 1, unlike Experimental Example 1, it can be seen that even if plasma treatment is performed for 60 seconds, impurities including silicon are not sufficiently removed and the reproducibility of the effect is extremely low. In addition, the shear strength of the bump in Comparative Experimental Example 1 is greatly reduced as compared with Experimental Example 1.

  The present invention can be applied to the manufacture of a semiconductor light emitting device including a die bonding step using a die bonding paste containing silicone.

  1a, 1b: device electrode, 2: semiconductor light emitting device, 3: die bonding paste containing silicone, 4: lead frame, 4a, 4b: substrate electrode, 5: resin part, 5a: mounting area, 5b: reflecting surface, 6 : Mount substrate, 7: plasma atmosphere, 8a, 8b: gold wire (bonding wire), 9: transparent resin (sealing resin), 10: semiconductor light emitting device, 11: processing chamber, 12: canode, 13: anode, 14 : Gas introduction port, 15: Exhaust port, 16: Decompression pump, 17: High frequency power source, 18: Control unit, 19: Gas supply unit, 20: Plasma cleaning device, 30: Substrate (FR4), 31: Hot plate, 32 : Die bonding paste containing silicone, 33: Dome, 34: Bump

Claims (6)

Fixing a semiconductor light emitting element having at least one electrode on the surface thereof with a die bonding paste containing silicone on a mount substrate having at least one electrode circuit on the surface;
Curing the die bonding paste by heating the mount substrate on which the semiconductor light emitting element is mounted;
After curing the die bonding paste, performing a plasma treatment for cleaning the mount substrate on which the semiconductor light emitting element is fixed with plasma of a mixed gas containing argon and fluorocarbon;
And a step of connecting the at least one electrode and the electrode circuit by wire bonding after the plasma treatment.   The method for manufacturing a semiconductor light emitting device according to claim 1, wherein in the mixed gas, a flow ratio of fluorocarbon to argon is 10 to 40%.   The plasma treatment includes a first treatment for cleaning the mount substrate on which the semiconductor light emitting element is fixed with plasma of the mixed gas, and a second treatment for cleaning with argon plasma after the first treatment. A method for manufacturing a semiconductor light emitting device according to 1 or 2.   The manufacturing method of the semiconductor light-emitting device of any one of Claims 1-3 with which the said electrode circuit is provided with the silver alloy which has silver or silver as a main component.   5. The semiconductor light-emitting device according to claim 1, wherein the mount substrate includes a reflective surface that is formed so as to surround the semiconductor light-emitting element and reflects light emitted from the semiconductor light-emitting element. Production method.   At least one of the organosiloxanes is produced by causing ions in the plasma of a mixed gas containing argon and fluorocarbon to collide with the substrate on which the organosiloxane is adhered and reacting radicals in the plasma with a substance derived from the organosiloxane. A cleaning method using plasma, in which a part is removed from the substrate.

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