JP2013079868A - Electronic device, manufacturing method thereof, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electronic device with high reliability.SOLUTION: An electronic device 100 according to the present invention includes a base body 10, a lid body 20 that is placed on the base body 10, and a functional element 102 that is placed on a cavity 32 sealed by the base body 10 and lid body 20. At least one of the base body 10 and lid body 20 is provided with a communication hole 40, and a sealing member 60 that closes the communication hole 40. A face 15a of at least one of the base body 10 and lid body 20 defining the cavity 32 is provided with a metal layer 70. The metal layer 70 is provided to overlap a first opening 41 on the cavity 32 side of the communication hole 40 in a plan view.

Description

  The present invention relates to an electronic device, a manufacturing method thereof, and an electronic apparatus.

  In recent years, electronic devices such as inertial sensors that detect physical quantities using, for example, silicon MEMS (Micro Electro Mechanical System) technology have been developed. Among such inertial sensors, a gyro sensor (angular velocity sensor) that detects angular velocity is used for a camera shake correction function of a digital still camera (DSC), a motion sensing function of a game machine, or the like.

  Generally, it is desirable that a vibration type gyro sensor that vibrates a structure and detects a Coriolis force is sealed in a vacuum atmosphere. The vibration type gyro sensor constantly vibrates to detect the Coriolis force. When air (or other gas etc.) exists in the package (cavity) that houses the vibration type gyro sensor, This is because the vibration phenomenon is attenuated.

  As a technique for sealing the inside of the package in a vacuum, a technique using a laser disclosed in Patent Document 1 can be given. More specifically, in the technique described in Patent Document 1, a spherical sealing member is disposed in the through hole formed in the package, and the sealing member is melted by a laser to fill the inside of the through hole. The inside of the package is sealed in a vacuum.

JP 2005-64024 A

  However, for example, when the sealing member is melted in the above-described technique, a part of the sealing member may be scattered in the package and adhere to a functional element such as an inertial sensor. If a part of the sealing member adheres to the functional element, for example, the frequency of the functional element may change or the Q value may decrease. Therefore, the reliability of an electronic device in which such a functional element is accommodated in the package may be reduced.

  One of the objects according to some aspects of the present invention is to provide an electronic device having high reliability and a method for manufacturing the same. Another object of some aspects of the present invention is to provide an electronic apparatus including the electronic device.

[Application Example 1]
An electronic device according to the present invention includes:
A substrate;
A lid placed on the substrate;
A functional element placed in a cavity surrounded by the base and the lid;
Including
At least one of the base and the lid is provided with a through hole and a sealing member that closes the through hole,
A metal layer is provided on a surface defining the cavity of at least one of the base and the lid;
The metal layer is provided so as to overlap the first opening on the cavity side of the through hole in plan view.

  According to such an electronic device, for example, when the sealing member is melted by laser irradiation to close the through hole, even if a part of the sealing member is scattered in the cavity, the scattered sealing member is It can be attached to the metal layer. Thereby, it can suppress that the scattering sealing member adheres to a functional element. As a result, such an electronic device can have high reliability.

[Application Example 2]
In the electronic device according to the present invention,
In the through hole, the area of the second opening opposite to the first opening may be larger than the area of the first opening.

  According to such an electronic device, for example, the range of the sealing member that scatters can be reduced as compared with the case where the area of the first opening is the same as the area of the second opening. Therefore, the area of the metal layer can be reduced, and the electronic device can be reduced in size.

[Application Example 3]
In the electronic device according to the present invention,
The functional element may be disposed at a position that does not overlap the first opening in plan view.

  According to such an electronic device, even if the sealing member is scattered in the cavity, it is possible to more reliably suppress the scattered sealing member from adhering to the functional element.

[Application Example 4]
In the electronic device according to the present invention,
The metal layer may contain an element contained in the sealing member.

  According to such an electronic device, the sealing member is scattered in the cavity by melting the sealing member while heating the metal layer above the eutectic temperature of the metal of the sealing member and the metal of the metal layer. Even if it does, the sealing member scattered on the metal layer and the metal layer can be alloyed. Thereby, even if vibration etc. are added, the scattered sealing member does not leave | separate from a metal layer, but it can suppress more reliably that a sealing member adheres to a functional element.

[Application Example 5]
In the electronic device according to the present invention,
Silicon may be used for the lid.

  According to such an electronic device, when forming the through hole, it is possible to apply a processing technique used for manufacturing a silicon semiconductor device. As a result, the through hole can be formed with a fine and high accuracy.

[Application Example 6]
In the electronic device according to the present invention,
The substrate is glass;
The functional element may be a gyro sensor using silicon.

  According to such an electronic device, the base body and the functional element, and the base body and the lid can be easily joined using anodic bonding. Further, when the gyro sensor is formed by silicon MEMS processing, if the base is made of silicon, for example, an insulating film needs to be interposed in order to maintain insulation between the gyro sensor and the base, but the base should be made of glass. Therefore, it is not necessary to interpose an insulating film, and insulation can be easily separated.

[Application Example 7]
An electronic device manufacturing method according to the present invention includes:
Placing the functional element on the substrate;
Preparing a lid,
Forming a through hole in at least one of the base and the lid;
Forming a metal layer on at least one of the base and the lid;
Placing the lid on the base and storing the functional element in a cavity surrounded by the base and the lid;
Placing a sealing member in the through hole;
Melting the sealing member with an energy beam and closing the through hole;
Including
The metal layer is
It is a surface that defines at least one of the cavities of the base and the lid, and is formed at a position that overlaps the first opening on the cavity side of the through hole in plan view.

  According to such a manufacturing method of an electronic device, for example, when a sealing member is melted by laser irradiation to close a through hole, even if a part of the sealing member is scattered in the cavity, the scattered sealing The member can be attached to the metal layer. Thereby, it can suppress that the scattering sealing member adheres to a functional element. As a result, an electronic device having high reliability can be formed.

[Application Example 8]
In the method for manufacturing an electronic device according to the present invention,
In the step of closing the through hole,
You may heat the said metal layer more than the eutectic temperature of the metal of the said sealing member, and the metal of the said metal layer.

  According to such an electronic device manufacturing method, even if the sealing member is scattered in the cavity, the sealing member scattered on the metal layer and the metal layer can be alloyed. Therefore, even if vibration or the like is applied, the scattered sealing member does not leave the metal layer and can more reliably suppress the sealing member from adhering to the functional element.

[Application Example 9]
In the method for manufacturing an electronic device according to the present invention,
In the step of closing the through hole,
The sealing member may be melted after decompressing the cavity through the through hole.

  According to such an electronic device manufacturing method, the cavity can be sealed in a reduced pressure state, and the vibration of the functional element (more specifically, the gyro sensor) can be suppressed from being attenuated by the air viscosity.

[Application Example 10]
The electronic device according to the present invention is
An electronic device according to the present invention is included.

  According to such an electronic apparatus, since it includes the electronic device according to the present invention, it can have high reliability.

FIG. 3 is a cross-sectional view schematically showing the electronic device according to the embodiment. FIG. 2 is a plan view schematically showing the electronic device according to the embodiment. 1 is a cross-sectional perspective view schematically showing an electronic device according to an embodiment. The top view which shows typically the functional element of the electronic device which concerns on this embodiment. The figure for demonstrating operation | movement of the functional element of the electronic device which concerns on this embodiment. The figure for demonstrating operation | movement of the functional element of the electronic device which concerns on this embodiment. The figure for demonstrating operation | movement of the functional element of the electronic device which concerns on this embodiment. The figure for demonstrating operation | movement of the functional element of the electronic device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the electronic device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the electronic device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the electronic device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the electronic device which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the electronic device which concerns on this embodiment. Sectional drawing and the top view which show typically the manufacturing process of the electronic device which concerns on this embodiment. Sectional drawing which shows typically the electronic device which concerns on the modification of this embodiment. The perspective view which shows typically the electronic device which concerns on this embodiment. The perspective view which shows typically the electronic device which concerns on this embodiment. The perspective view which shows typically the electronic device which concerns on this embodiment.

  Preferred embodiments of the present invention will be described below with reference to the drawings.

1. Electronic Device First, an electronic device according to the present embodiment will be described with reference to the drawings. FIG. 1 is a cross-sectional view schematically showing an electronic device 100 according to this embodiment. FIG. 2 is a plan view schematically showing the electronic device 100 according to the present embodiment. FIG. 3 is a cross-sectional perspective view schematically showing the electronic device 100 according to the present embodiment. 1 is a cross-sectional view taken along line AA in FIG. 2, and FIG. 3 is a cross-sectional perspective view taken along line AA in FIG. For convenience, FIGS. 1 to 3 illustrate an X axis, a Y axis, and a Z axis as three axes orthogonal to each other.

  As shown in FIGS. 1 to 3, the electronic device 100 includes a package 30 having a base 10 and a lid 20, a sealing member 60, a metal layer 70, and a functional element 102. The electronic device 100 can further include a conductive layer 50. For convenience, the functional element 102 is simplified in FIGS. 1 and 2, and the functional element 102 is omitted in FIG. 2 and 3, the sealing member 60 is omitted from the illustration.

  As the substrate 10, for example, a glass substrate, a silicon substrate, or a quartz substrate can be used. The base 10 supports the functional element 102. More specifically, a recess 14 is formed in the first surface 12 of the base 10, and the functional element 102 is disposed above the recess 14. By the recess 14, the functional element 102 can move only in a desired direction without being obstructed by the base 10. The first surface 12 is a surface that defines the cavity 32.

  In the example of FIGS. 1 and 3, a recess 15 is formed in the first surface 12 of the base 10. A metal layer 70 is provided on the bottom surface 15 a of the recess 15. The bottom surface 15 a is a surface that defines the cavity 32. The depth of the recess 15 may be the same as the depth of the recess 14 or may be different.

  The lid 20 is placed on the base 10. The lid 20 may be bonded to the base body 10. In some cases, it may be bonded to a part of the functional element 102. A silicon substrate is used as the lid 20. When a glass substrate is used as the substrate 10, the substrate 10 and the lid 20 may be bonded by anodic bonding.

  In addition, the joining method of the base | substrate 10 and the cover body 20 is not specifically limited, For example, joining by adhesives, such as low melting glass (glass paste), and joining by solder may be sufficient. Alternatively, the base 10 and the lid 20 may be joined by forming a metal thin film (not shown) at each joint portion of the base 10 and the lid 20 and eutectically bonding the metal thin films to each other. .

  The base 10 and the lid 20 form a cavity 32 that houses the functional element 102. In the illustrated example, a concave portion is formed in the lid 20, and the concave portion is sealed by the base body 10 to become a cavity 32. The planar shape (the shape viewed from the Z-axis direction) of the base body 10 and the lid body 20 is not particularly limited as long as the functional element 102 can be accommodated in the cavity 32. However, in the example shown in FIG. ).

  The cavity 32 is sealed in a reduced pressure state or an inert gas (for example, nitrogen gas) atmosphere. In particular, when a vibration gyro sensor is used as the functional element 102, the cavity 32 is desirably in a reduced pressure state (more preferably in a vacuum state). Thereby, it can suppress that the vibration phenomenon of a gyro sensor attenuate | damps by air viscosity.

  In the example shown in the figure, the concave portion to be the cavity 32 is formed in the lid body 20, but may be formed in the base body 10, and the functional element 102 is accommodated in the concave portion 14 formed in the base body 10. The cavity 32 may be formed by sealing the recess 14 with the lid 20.

  A through hole 40 is formed in the lid 20. The through hole 40 communicates with the cavity 32. In the illustrated example, the through hole 40 penetrates the lid 20 in the Z-axis direction. The first opening 41 is an opening provided on the second surface 22 of the lid 20 that defines the cavity 32. The second opening 42 is an opening provided on the third surface 24 that is the surface opposite to the second surface 22 of the lid 20 and forms the outer shape of the package 30. The through hole 40 has a shape in which the area of the second opening 42 opposite to the first opening 41 is larger than the area of the first opening 41 on the cavity 32 side. As shown in FIG. 2, the first opening 41 is disposed inside the outer periphery of the second opening 42 in a plan view (viewed from the Z-axis direction). The through hole 40 has a shape in which the area of the opening gradually increases from the first opening 41 toward the second opening 42.

  The shape of the 1st opening 41 is a polygon, as shown in FIG. In the illustrated example, the shape of the first opening 41 is a rectangle (more specifically, a square). The shape of the second opening 42 is not particularly limited, and may be, for example, a circular shape. However, in the illustrated example, it is a rectangle (more specifically, a square) like the first opening 41. As shown in FIG. 2, the first opening 41 is disposed at a position that does not overlap the functional element 102 in plan view. That is, the first opening 41 is disposed outside the outer edge of the functional element 102.

  The side surface of the through hole 40 (the surface of the lid 20 that defines the through hole 40) is constituted by, for example, four flat surfaces 43, 44, 45, and 46. When the through hole 40 is formed by wet etching the lid body 20 made of a (100) silicon substrate, the flat surfaces 43, 44, 45, and 46 have a (111) plane crystal plane. In this case, the flat surfaces 43, 44, 45, 46 are formed with a predetermined angle (about 54.7 °) with respect to the first surface 22 of the lid 20.

  As shown in FIG. 3, the opening diameter L1 of the first opening 41 is, for example, about 100 μm. The opening diameter L2 of the second opening 42 is, for example, about 426 μm. A distance D between the first surface 22 and the second surface 24 of the lid 20 is, for example, about 230 μm. The depth (the distance between the first surface 12 and the second surface 22) H of the cavity 32 is, for example, about 50 μm. Note that the opening diameter L1 is, for example, a distance between a side that is a joint between the flat surface 43 and the first surface 22 and a side that is a joint between the flat surface 45 and the first surface 22. The opening diameter L <b> 2 is, for example, a distance between a side that is a joint between the flat surface 43 and the second surface 24 and a side that is a joint between the flat surface 45 and the second surface 24.

  As shown in FIGS. 1 to 3, the conductive layer 50 is formed on the side surface of the through hole 40. As the conductive layer 50, for example, a layer in which a chromium layer and a gold layer are laminated in this order from the side surface side of the through hole 40 can be used. The conductive layer 50 can improve the adhesion between the side surface of the through hole 40 and the sealing member 60. Although the thickness of the conductive layer 50 is not specifically limited, For example, it is about 30 nm-200 nm.

  The material of the conductive layer 50 can be changed as appropriate depending on the material of the sealing member 60. Although not shown, the conductive layer 50 may be formed on the entire surface of the lid 20.

  The sealing member 60 is disposed in the through hole 40 and closes the through hole 40. The cavity 32 can be sealed by the sealing member 60. The material of the sealing member 60 is an alloy such as AuGe, AuSi, AuSn, SnPb, PbAg, SnAgCu, SnZnBi, for example.

  The metal layer 70 is accommodated in the cavity 32. In the illustrated example, the metal layer 70 is provided on the bottom surface 15 a of the recess 15 formed on the first surface 12 of the base 10 so as to be separated from the functional element 102. In plan view, the metal layer 70 is provided so as to overlap the first opening 41 of the through hole 40. More specifically, as shown in FIG. 2, the first opening 41 of the through hole 40 is disposed inside the outer edge of the metal layer 70. That is, the first opening 41 completely overlaps the metal layer 70. That is, the area of the metal layer 70 (the area when viewed from the Z-axis direction) is larger than the area of the first opening 41. The planar shape of the metal layer 70 is not particularly limited as long as it overlaps with the through hole 40, but in the illustrated example, it is rectangular (more specifically, square).

  The metal layer 70 is made of a material that forms the sealing member 60 and a material that can be alloyed. The metal layer 70 may contain an element contained in the sealing member 60. For example, when the material of the sealing member 60 is AuGe, the metal layer 70 may be configured to include Au that can be alloyed with AuGe. Moreover, when the material of the sealing member 60 is AuGe, it may be configured to include at least one of Ti and Al that can be alloyed with AuGe. Alternatively, when the substrate 10 is a glass substrate or a quartz substrate, the metal layer 70 may be a multilayer film including a chromium layer having good adhesion to the glass substrate or the quartz substrate. Although the thickness of the metal layer 70 is not specifically limited, For example, it is about 100 nm.

  The functional element 102 is mounted on the base 10 and placed (accommodated) in a cavity 32 formed by the base 10 and the lid 20 (enclosed by the base 10 and the lid 20). The functional element 102 may be bonded to the base 10 by, for example, anodic bonding or direct bonding, or may be bonded by an adhesive. The form of the functional element 102 is not particularly limited as long as it operates in a cavity 32 sealed in a reduced pressure state or an inert gas atmosphere. For example, a gyro sensor, an acceleration sensor, a vibrator, a SAW (elasticity) Various functional elements such as (surface wave) elements and microactuators can be mentioned.

  Hereinafter, an example in which a gyro sensor is used as the functional element 102 will be described. FIG. 4 is a plan view schematically showing the functional element 102 of the electronic device 100 according to the present embodiment. For convenience, FIG. 4 shows an X axis, a Y axis, and a Z axis as three axes orthogonal to each other. The same applies to FIGS. 5 to 8 described later.

  As shown in FIG. 4, the functional element 102 can include a vibration system structure 104, a driving fixed electrode 130, a detection fixing electrode 140, and a fixing unit 150.

  The vibration system structure 104 is integrally formed, for example, by processing a silicon substrate bonded to the base 10. Thereby, it is possible to apply a fine processing technique used for manufacturing a silicon semiconductor device, and the vibration system structure 104 can be downsized.

  The vibration system structure 104 is supported by a fixing portion 150 fixed to the base body 10 (see FIG. 1), and is disposed apart from the base body 10. The vibration system structure 104 can include a first vibration body 106 and a second vibration body 108. The first vibrating body 106 and the second vibrating body 108 are connected to each other along the X axis.

  The first vibrating body 106 and the second vibrating body 108 can have a shape that is symmetric with respect to a boundary line B (a straight line along the Y axis) of both. Therefore, hereinafter, the configuration of the first vibrating body 106 will be described, and the description of the configuration of the second vibrating body 108 will be omitted.

  The first vibrating body 106 includes a drive unit 110 and a detection unit 120. The drive unit 110 can include a drive support unit 112, a drive spring unit 114, and a drive movable electrode 116.

  The driving support 112 has, for example, a frame shape, and the detection unit 120 is disposed inside the driving support 112. In the illustrated example, the driving support portion 112 includes a first extension portion 112a extending along the X axis and a second extension portion 112b extending along the Y axis.

  The drive spring portion 114 is disposed outside the drive support portion 112. In the illustrated example, one end of the driving spring portion 114 is connected to the vicinity of the corner portion of the driving support portion 112 (the connecting portion between the first extending portion 112a and the second extending portion 112b). The other end of the driving spring portion 114 is connected to the fixed portion 150.

  In the illustrated example, four driving spring portions 114 are provided in the first vibrating body 106. Therefore, the first vibrating body 106 is supported by the four fixing parts 150. Note that the fixing portion 150 on the boundary line B between the first vibrating body 106 and the second vibrating body 108 may not be provided.

  The drive spring portion 114 has a shape extending along the X axis while reciprocating along the Y axis. The plurality of driving spring portions 114 are imaginary lines (not shown) along the X axis passing through the center of the driving support portion 112 and imaginary lines along the Y axis passing through the center of the driving support portion 112 (see FIG. (Not shown). By making the drive spring portion 114 in the shape as described above, the drive spring portion 114 is prevented from being deformed in the Y-axis direction and the Z-axis direction, and the drive spring portion 114 is vibrated. The direction can be smoothly expanded and contracted in the X-axis direction. As the driving spring portion 114 expands and contracts, the driving support portion 112 (the driving portion 110) can be vibrated along the X axis. The number of the drive spring portions 114 is not particularly limited as long as the drive support portion 112 can vibrate along the X axis.

  The driving movable electrode 116 is disposed outside the driving support 112 and connected to the driving support 112. More specifically, the driving movable electrode 116 is connected to the first extending portion 112 a of the driving support portion 112.

  The driving fixed electrode 130 is disposed outside the driving support portion 112. The driving fixed electrode 130 is fixed on the base 10 (see FIG. 1). In the example shown in the drawing, a plurality of driving fixed electrodes 130 are provided, and are arranged to face each other via the driving movable electrode 116. In the illustrated example, the driving fixed electrode 130 has a comb-like shape, and the driving movable electrode 116 has a protrusion 116 a that can be inserted between the comb teeth of the driving fixed electrode 130. ing. By reducing the distance (gap) between the driving fixed electrode 130 and the protruding portion 116a, the electrostatic force acting between the driving fixed electrode 130 and the driving movable electrode 116 can be increased.

  When a voltage is applied to the driving fixed electrode 130 and the driving movable electrode 116, an electrostatic force can be generated between the driving fixed electrode 130 and the driving movable electrode 116. As a result, the drive support portion 112 (drive portion 110) can be vibrated along the X axis while the drive spring portion 114 is expanded and contracted along the X axis.

  In the illustrated example, four drive movable electrodes 116 are provided in the first vibrating body 106. However, the number of drive movable electrodes 116 is particularly limited if the drive support 116 can be vibrated along the X axis. It is not limited. In the illustrated example, the driving fixed electrode 130 is disposed to face the driving movable electrode 116. However, if the driving support 112 can be vibrated along the X axis, the driving fixing electrode 130 is fixed. The electrode 130 may be disposed only on one side of the driving movable electrode 116.

  The detection unit 120 is connected to the drive unit 110. In the illustrated example, the detection unit 120 is disposed inside the drive support unit 112. The detection unit 120 can include a detection support unit 122, a detection spring unit 124, and a detection movable electrode 126. Although not shown, the detection unit 120 may be disposed outside the drive support unit 112 as long as it is connected to the drive unit 110.

  The detection support part 122 has, for example, a frame shape. In the illustrated example, the detection support portion 122 includes a third extension portion 122a that extends along the X axis and a fourth extension portion 122b that extends along the Y axis.

  The detection spring portion 124 is disposed outside the detection support portion 122. The detection spring portion 124 connects the detection support portion 122 and the drive support portion 112. More specifically, one end of the detection spring part 124 is connected to the vicinity of a corner of the detection support part 122 (a connection part between the third extension part 122a and the fourth extension part 122b). The other end of the detection spring portion 124 is connected to the first extending portion 112 a of the drive support portion 112.

  The detection spring portion 124 has a shape extending along the Y axis while reciprocating along the X axis. In the illustrated example, four detection spring portions 124 are provided in the first vibrating body 106. The plurality of detection spring portions 124 are imaginary lines (not shown) along the X axis passing through the center of the detection support portion 122 and imaginary lines along the Y axis passing through the center of the detection support portion 122 (see FIG. (Not shown). By forming the detection spring portion 124 as described above, the detection spring portion 124 is prevented from being deformed in the X-axis direction and the Z-axis direction, and the detection spring portion 124 is vibrated by the detection unit 120. Can be smoothly expanded and contracted in the Y-axis direction. As the detection spring part 124 expands and contracts, the detection support part 122 (the detection part 120) can be displaced along the Y axis. The number of the detection spring portions 124 is not particularly limited as long as the detection support portion 122 can be displaced along the Y axis.

  The detection movable electrode 126 is disposed inside the detection support portion 122 and connected to the detection support portion 122. In the illustrated example, the detection movable electrode 126 extends along the X axis and is connected to the two fourth extension portions 122 b of the detection support portion 122.

  The detection fixed electrode 140 is disposed inside the detection support part 122. The detection fixed electrode 140 is fixed on the substrate 10 (see FIG. 1). In the example shown in the figure, a plurality of detection fixed electrodes 140 are provided and are arranged to face each other via the detection movable electrode 126.

  The number and shape of the detection movable electrode 126 and the detection fixed electrode 140 are not particularly limited as long as a change in electrostatic capacitance between the detection movable electrode 126 and the detection fixed electrode 140 can be detected.

  Next, the operation of the functional element 102 will be described. 5-8 is a figure for demonstrating operation | movement of the functional element 102 of the electronic device 100 which concerns on this embodiment. For convenience, in FIG. 5 to FIG. 8, each part of the functional element 102 is illustrated in a simplified manner.

  When a voltage is applied to the driving fixed electrode 130 and the driving movable electrode 116 by a power source (not shown), an electrostatic force can be generated between the driving fixed electrode 130 and the driving movable electrode 116. Accordingly, as shown in FIGS. 5 and 6, the driving spring portion 114 can be expanded and contracted along the X axis, and the driving portion 110 can be vibrated along the X axis.

  More specifically, a first alternating voltage is applied between the driving movable electrode 116 and the fixed electrode 130 of the first vibrating body 106, and the driving movable electrode 116 and the fixed electrode 130 of the second vibrating body 108 are A second alternating voltage having a phase difference of 180 degrees from the first alternating voltage is applied between them. As a result, the first driving unit 110a of the first vibrating body 106 and the second driving unit 110b of the second vibrating body 108 can be vibrated along the X-axis at opposite phases and at a predetermined frequency. That is, the first drive unit 110a and the second drive unit 110b connected to each other along the X axis vibrate in opposite phases along the X axis. In the example shown in FIG. 5, the first drive unit 110a is displaced in the α1 direction, and the second drive unit 110b is displaced in the α2 direction opposite to the α1 direction. In the example shown in FIG. 6, the first drive unit 110a is displaced in the α2 direction, and the second drive unit 110b is displaced in the α1 direction.

  Since the detection unit 120 is connected to the drive unit 110, the detection unit 120 also vibrates along the X axis in accordance with the vibration of the drive unit 110. That is, the first vibrating body 106 and the second vibrating body 108 are displaced in directions opposite to each other along the X axis.

  As shown in FIG. 7 and FIG. 8, when the angular velocity ω around the Z axis is applied to the functional element 102 in a state where the driving units 110 a and 110 b are performing the first vibration, Coriolis force acts, and the detection unit 120 , Along the Y axis. That is, the first detection unit 120a connected to the first drive unit 110a and the second detection unit 120b connected to the second drive unit 110b are opposite to each other along the Y axis due to the first vibration and the Coriolis force. Displace in the direction. In the example shown in FIG. 7, the first detection unit 120a is displaced in the β1 direction, and the second detection unit 120b is displaced in the β2 direction opposite to the β1 direction. In the example shown in FIG. 8, the first detection 120a is displaced in the β2 direction, and the second detection unit 120b is displaced in the β1 direction.

  As the detection units 120a and 120b are displaced along the Y axis, the distance L between the detection movable electrode 126 and the detection fixed electrode 140 changes. Therefore, the capacitance between the detection movable electrode 126 and the detection fixed electrode 140 changes. The functional element 102 detects the amount of change in capacitance between the detection movable electrode 126 and the detection fixed electrode 140 by applying a voltage to the detection movable electrode 126 and the detection fixed electrode 140, and Z An angular velocity ω around the axis can be obtained.

  In addition, although the form (electrostatic drive system) which drives the drive part 110 with an electrostatic force was demonstrated above, the method to drive the drive part 110 is not specifically limited, A piezoelectric drive system or the Lorentz force of a magnetic field It is possible to apply an electromagnetic drive system using

  The electronic device 100 according to the present embodiment has the following features, for example.

  The electronic device 100 includes the metal layer 70 that is accommodated in the cavity 32 and overlaps the first opening 41 of the through hole 40 in plan view. Therefore, for example, when the sealing member is melted by laser irradiation to close the through hole 40, even if a part of the sealing member scatters into the cavity 32, the scattered sealing member adheres to the metal layer 70. Can be made. Thereby, it is possible to suppress the scattered sealing member from adhering to the functional element 102. As a result, the electronic device 100 can have high reliability.

  According to the electronic device 100, since the through hole 40 has a shape in which the area of the first opening 41 on the cavity 32 side is smaller than the area of the second opening 42, for example, the area of the first opening Compared with the case where the area of the second opening is the same, the range of the sealing member that scatters can be reduced. Therefore, the area of the metal layer 70 (the area when viewed from the Z-axis direction) can be reduced, and the electronic device 100 can be downsized.

  According to the electronic device 100, the first opening 41 and the functional element 102 are not arranged at an overlapping position in plan view. Thereby, even if the sealing member scatters in the cavity 32, it is possible to more reliably suppress the scattered sealing member from adhering to the functional element 102.

  According to the electronic device 100, the metal layer 70 can include an element included in the sealing member 60. As a result, even if the sealing member is scattered in the cavity 32 by melting the sealing member while heating the metal layer 70 to the eutectic temperature of the metal of the sealing member and the metal of the metal layer 70 or higher. The sealing member scattered on the metal layer 70 and the metal layer 70 can be alloyed. For example, the metal layer 70 is formed using AuSn, and the sealing member 60 made of AuGe is melted with a laser while being heated to a eutectic temperature of 280 ° C. or higher. When the scattered sealing member arrives at the surface layer of the metal layer 70, it forms a eutectic with AuSn and adheres to the surface of the metal layer 70. Therefore, even if vibration or the like is applied to the electronic device 100, the scattered sealing member does not leave the metal layer 70 and can more reliably suppress the sealing member from adhering to the functional element 102. .

  According to the electronic device 100, the lid 20 in which the through hole 40 is formed is made of silicon. Thereby, when forming the through-hole 40, the processing technique used for manufacture of a silicon semiconductor device can be applied. As a result, the through hole 40 can be formed with a fine and high accuracy.

  According to the electronic device 100, the material of the base 10 is glass, and the functional element 102 is a gyro sensor using silicon. Therefore, the base 10 and the functional element 102, and the base 10 and the lid 20 can be easily joined using anodic bonding. Further, when the gyro sensor is formed by MEMS processing of silicon, if the base is made of silicon, for example, an insulating film needs to be interposed in order to maintain insulation between the gyro sensor and the base, but the base 10 is made of glass. Therefore, it is not necessary to interpose an insulating film, and insulation can be easily separated.

  According to the electronic device 100, the metal layer 70 is provided on the bottom surface 15 a of the recess 15 of the base body 10. Therefore, even if the sealing member scattered in the cavity 32 does not adhere to the metal layer 70, the scattered sealing member can be stopped in the recess 15, and the sealing member adheres to the functional element 102. This can be suppressed.

  According to the electronic device 100, the shape of the first opening 41 can be a polygon (more specifically, a rectangle). Therefore, for example, in a state where the spherical sealing member 60a is disposed in the through hole 40, a gap is formed between the side surface of the through hole 40 and the sealing member 60a (between the sealing member 60a and the metal layer 50). 48 can be provided (see FIG. 14). Thereby, when making the cavity 32 into a pressure-reduced state, it can suppress that the sealing member 60a jumps out. For example, if a gap is not provided in a state where the spherical sealing member is disposed in the through hole, the sealing member may jump out of the package due to a pressure difference inside and outside the package.

2. Next, a method for manufacturing an electronic device according to the present embodiment will be described with reference to the drawings. 9 to 14 are cross-sectional views schematically showing manufacturing steps of the electronic device 100 according to the present embodiment. In addition to the cross-sectional view (FIG. 14A), FIG. 14 also shows a plan view (FIG. 14B) schematically showing the manufacturing process of the electronic device 100. For convenience, the functional element 102 is simplified in FIGS.

  As shown in FIG. 9, for example, a glass substrate is patterned to form recesses 14 and 15 on the first surface 12 side to obtain the base body 10. At this time, the depth of the recess 14 and the depth of the recess 15 may be the same or different. Next, the metal layer 70 is formed on the bottom surface 15 a of the recess 15 of the base 10. The metal layer 70 is formed by forming a conductive layer (not shown) and then patterning the conductivity. For example, the conductive layer is formed by sputtering. The patterning is performed by a photolithography technique and an etching technique. Note that the metal layer 70 may be formed first, and then the recess 14 may be formed.

  The step of forming the metal layer 70 may be performed at any time as long as it is before the step of placing the lid 20 on the base 10 and accommodating the functional element 102. This may be performed after the conductive layer 50 is formed on the side surface of the substrate.

  As shown in FIG. 10, a silicon substrate 102 a to be a functional element 102 is bonded to the base 10. The bonding between the base 10 and the silicon substrate 102a is performed using, for example, anodic bonding, direct bonding, or an adhesive. In addition, when joining the base | substrate 10 and the silicon substrate 102a by anodic bonding, it is preferable to carry out, making the metal layer 70 the same electric potential as the base | substrate 10. FIG. Thereby, it can suppress that the silicon substrate 102a adheres on the metal layer 70. FIG.

  As shown in FIG. 11, the silicon substrate 102a is ground and thinned by, for example, a grinding machine, and then patterned into a desired shape to form the functional element 102. Thereby, the functional element 102 can be mounted (mounted) on the base 10. The patterning is performed by a photolithography technique and an etching technique, and a Bosch method can be used as a more specific etching technique. Thereby, fine processing is possible, and the functional element 102 can be miniaturized.

  As shown in FIG. 12, for example, a silicon substrate is prepared as the lid 20, and the silicon substrate is patterned to obtain the lid 20 in which the through holes 40 and the recesses 32 a that become the cavities 32 are formed. The patterning is performed by a photolithography technique and an etching technique, and wet etching can be used as a more specific etching technique. The through hole 40 is formed by wet etching from the third surface 24 side. The recess 32a is formed by wet etching from the second surface 22 side. By the wet etching, the side surface of the through hole 40 can be a flat surface having a (111) crystal plane, and the shape of the first opening 41 is a polygon (more specifically, a rectangle). Can do. Further, the through hole 40 can be formed such that the area of the second opening 42 is larger than the area of the first opening 41. In addition, the through-hole 40 and the recessed part 32a may be formed simultaneously, and may be formed in a separate process.

  Next, the conductive layer 50 is formed on the side surface of the through hole 40. The conductive layer 50 is formed, for example, by forming a conductive layer (not shown) by sputtering and patterning the conductive layer.

  As shown in FIG. 13, the lid 20 is placed on the base 10, and the functional element 102 and the metal layer 70 are accommodated in the cavity 32 formed by the base 10 and the lid 20. The lid 20 may be bonded to the base body 10. The bonding between the base 10 and the lid 20 is performed using, for example, anodic bonding or an adhesive. The base 10 and the lid 20 are joined such that the first opening 41 and the functional element 102 do not overlap with each other and at least a part of the first opening 41 and at least a part of the metal layer 70 overlap in a plan view. Done.

  As shown in FIG. 14, the sealing member 60 a is disposed in the through hole 40. In the illustrated example, the sealing member 60a is spherical and is a so-called solder ball. As the sealing member 60a, a member whose diameter is larger than the opening diameter L1 of the first opening 41 is used. Thereby, it can suppress that the sealing member 60a falls to the cavity 32. FIG. Further, as described above, the shape of the first opening 41 is a polygon. Therefore, as shown in FIG. 14 (b), in a plan view, the sealing member 60a is disposed in the through hole 40, and between the side surface of the through hole 40 and the sealing member 60a (with the sealing member 60a and A gap 48 may be provided between the metal layer 50.

Next, the sealing member 60a is melted by irradiation with an energy beam (for example, laser) to close the through hole 40 (see FIG. 1). Thereby, the cavity 32 can be sealed. The type of laser is not particularly limited, and for example, a YAG laser or a CO ₂ laser can be used.

  The melting of the sealing member 60a is performed, for example, by using the metal layer 70 as a eutectic of the metal of the sealing member 60a (metal constituting the sealing member 60a) and the metal of the metal layer 70 (metal constituting the metal layer 70). It is performed while heating above the temperature. For example, when the sealing member 60a made of AuGe and the metal layer 70 made of AuSn are used, the metal layer 70 is heated to 280 ° C. or higher.

  Further, the sealing member 60a is melted, for example, after the cavity 32 is decompressed (through vacuum) through the through hole 40. For example, in the vacuum chamber, the sealing member 60a may be melted by irradiating a laser to close the through hole 40.

  In the above description, an example (see FIG. 12) in which the lid 20 is obtained by forming the through hole 40 and the recess 32a to be the cavity 32 after mounting the functional element 102 on the base body 10 (see FIG. 11). However, first, the through hole 40 and the like may be formed to obtain the lid 20, and then the functional element 102 may be mounted on the base 10.

  Through the above steps, the electronic device 100 can be manufactured.

  The method for manufacturing the electronic device 100 according to this embodiment has the following features, for example.

  According to the method for manufacturing the electronic device 100, at least a part of the metal layer 70 and at least a part of the first opening 41 of the through hole 40 overlap. Therefore, for example, when the spherical sealing member 60a is melted by laser irradiation and the through hole 40 is closed, even if a part of the sealing member is scattered in the cavity 32, the scattered sealing member is removed from the metal layer. 70 can be attached. Thereby, it is possible to suppress the scattered sealing member from adhering to the functional element 102. As a result, the electronic device 100 having high reliability can be formed.

  According to the method for manufacturing the electronic device 100, the sealing member 60a can be melted while the metal layer 70 is heated to a temperature higher than the eutectic temperature of the metal of the sealing member 60a and the metal of the metal layer 70. Thereby, even if the sealing member is scattered in the cavity 32, the scattered sealing member can be fixed on the surface of the metal layer 70. Therefore, even if vibration or the like is applied to the electronic device 100, the scattered sealing member does not leave the metal layer 70 and can more reliably suppress the sealing member from adhering to the functional element 102. .

  According to the method for manufacturing the electronic device 100, the sealing member 60 a can be melted after the cavity 32 is decompressed through the through hole 40. Thereby, the cavity 32 can be sealed in a reduced pressure state, and the vibration of the functional element 102 (more specifically, the gyro sensor) can be suppressed from being attenuated by the air viscosity.

  According to the method for manufacturing the electronic device 100, the first opening 41 and the functional element 102 can be prevented from overlapping in plan view. Accordingly, for example, when the spherical sealing member 60 a is melted by laser irradiation, even if a part of the sealing member 60 a is scattered in the cavity 32, the scattered sealing member is transferred to the functional element 102 more effectively. It can suppress adhering.

  According to the manufacturing method of the electronic device 100, the shape of the first opening 41 can be a polygon (more specifically, a rectangle). Therefore, the gap 48 can be provided between the side surface of the through hole 40 and the sealing member 60 a in a state where the spherical sealing member 60 a is disposed in the through hole 40. Thereby, when making the cavity 32 into a pressure-reduced state, it can suppress that the sealing member 60a jumps out. For example, if a gap is not provided in a state where the spherical sealing member is disposed in the through hole, the sealing member may jump out of the package due to a pressure difference inside and outside the package.

3. Next, an electronic device according to a modification of the present embodiment will be described with reference to the drawings. FIG. 15 is a cross-sectional view schematically showing an electronic device 200 according to a modification of the present embodiment, and corresponds to FIG. Hereinafter, in the electronic device 200 according to the modified example of the present embodiment, members having the same functions as the constituent members of the electronic device 100 according to the present embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the example of the electronic device 100, as shown in FIG. 1, the metal layer 70 is formed on the first surface 12 of the base body 10, and the through hole 40 is formed on the lid body 20. On the other hand, in the example of the electronic device 200, as shown in FIG. 15, the metal layer 70 is provided on the bottom surface 23 a of the recess 23 formed in the second surface 22 of the lid 20, and the through hole 40 is formed on the base body. 10 is formed.

  In the electronic device 200, a silicon substrate can be used as the substrate 10. By using a silicon substrate as the base 10, it is possible to apply a processing technique used for manufacturing a silicon semiconductor device when the through hole 40 is formed in the base 10. As a result, the through hole 40 can be formed with a fine and high accuracy. As the lid 20, for example, a glass substrate, a silicon substrate, or a quartz substrate can be used.

  In the electronic device 200, the first opening 41 of the through hole 40 is an opening provided in the first surface 12 of the base body 10 that defines the cavity 32. The second opening 42 of the through hole 40 is an opening provided on the fourth surface 16 that forms the outer shape of the package 30 on the surface opposite to the first surface 12 of the base body 10.

  As a manufacturing method of the electronic device 200, the above-described manufacturing method of the electronic device 100 can be basically applied. Therefore, the detailed description is abbreviate | omitted.

  According to the electronic device 200, like the electronic device 100, the electronic device 200 has the metal layer 70 that is accommodated in the cavity 32 and overlaps at least a part of the first opening 41 of the through hole 40 in plan view. Therefore, for example, when the sealing member is melted by laser irradiation to close the through hole 40, even if a part of the sealing member scatters into the cavity 32, the scattered sealing member adheres to the metal layer 70. Can be made. Thereby, it is possible to suppress the scattered sealing member from adhering to the functional element 102. As a result, the electronic device 200 can have high reliability.

  Although not shown, the through hole 40 may be formed in both the base 10 and the lid 20. In the case of such a configuration, the metal layer 70 may be provided on a surface defining the base 32 and the cavity 32 of the lid 20 so that each of the two through holes 40 overlaps.

4). Next, an electronic device according to the present embodiment will be described with reference to the drawings. The electronic apparatus according to the present embodiment includes the electronic device according to the present invention. Below, the electronic device containing the electronic device 100 is demonstrated as an electronic device which concerns on this invention.

  FIG. 16 is a perspective view schematically showing a mobile (or notebook) personal computer 1100 as the electronic apparatus according to the present embodiment.

  As shown in FIG. 16, the personal computer 1100 includes a main body portion 1104 having a keyboard 1102 and a display unit 1106 having a display portion 1108. The display unit 1106 has a hinge structure portion with respect to the main body portion 1104. It is supported so that rotation is possible.

  Such a personal computer 1100 incorporates an electronic device 100.

  FIG. 17 is a perspective view schematically showing a mobile phone (including PHS) 1200 as an electronic apparatus according to the present embodiment.

  As shown in FIG. 17, the mobile phone 1200 includes a plurality of operation buttons 1202, an earpiece 1204, and a mouthpiece 1206, and a display unit 1208 is disposed between the operation buttons 1202 and the earpiece 1204. .

  Such a cellular phone 1200 incorporates the electronic device 100.

  FIG. 18 is a perspective view schematically showing a digital still camera 1300 as the electronic apparatus according to the present embodiment. Note that FIG. 18 also shows a simple connection with an external device.

  Here, an ordinary camera sensitizes a silver salt photographic film with a light image of a subject, whereas a digital still camera 1300 photoelectrically converts a light image of a subject with an imaging device such as a CCD (Charge Coupled Device). An imaging signal (image signal) is generated.

  A display unit 1310 is provided on the back of a case (body) 1302 in the digital still camera 1300, and is configured to display based on an imaging signal from the CCD. The display unit 1310 displays an object as an electronic image. Functions as a viewfinder.

  A light receiving unit 1304 including an optical lens (imaging optical system), a CCD, and the like is provided on the front side (the back side in the drawing) of the case 1302.

  When the photographer confirms the subject image displayed on the display unit 1310 and presses the shutter button 1306, the CCD image pickup signal at that time is transferred and stored in the memory 1308.

  In the digital still camera 1300, a video signal output terminal 1312 and an input / output terminal 1314 for data communication are provided on the side surface of the case 1302. A television monitor 1430 is connected to the video signal output terminal 1312 and a personal computer 1440 is connected to the input / output terminal 1314 for data communication, if necessary. Further, the imaging signal stored in the memory 1308 is output to the television monitor 1430 or the personal computer 1440 by a predetermined operation.

  Such a digital still camera 1300 incorporates the electronic device 100.

  The electric appliances 1100, 1200, and 1300 as described above include the highly reliable electronic device 100. Therefore, the electric devices 1100, 1200, and 1300 can have high reliability.

  Note that the electronic apparatus including the electronic device 100 includes, for example, an ink jet type discharge in addition to the personal computer (mobile personal computer) shown in FIG. 16, the mobile phone shown in FIG. 17, and the digital still camera shown in FIG. Devices (for example, inkjet printers), laptop personal computers, televisions, video cameras, video tape recorders, various navigation devices, pagers, electronic notebooks (including those with communication functions), electronic dictionaries, calculators, electronic game machines, word processors, work Station, video phone, security TV monitor, electronic binoculars, POS terminal, medical equipment (eg electronic thermometer, blood pressure monitor, blood glucose meter, electrocardiogram measuring device, ultrasonic diagnostic device, electronic endoscope), fish detector, various measurements Equipment, instruments (eg If, vehicle, aircraft, gauges of a ship), can be applied to a flight simulator.

  The above-described embodiments and modifications are merely examples, and the present invention is not limited to these. For example, it is possible to appropriately combine each embodiment and each modification.

  The present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same objects and effects). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that exhibits the same operational effects as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

10 substrate, 12 1st surface, 14 recess, 15 recess, 15a bottom surface, 16 4th surface,
20 Lid, 22 First surface, 23 Recess, 23a Bottom surface, 24 Second surface,
30 packages, 32 cavities, 32a recesses, 40 through holes,
41 first opening, 42 second opening, 43 to 46 flat surface, 48 gap, 50 conductive layer,
60 sealing member, 60a sealing member, 70 metal layer, 100 electronic device,
102 functional element, 102a silicon substrate, 104 vibration system structure,
106 first vibrating body, 108 second vibrating body, 110 driving unit, 112 driving support unit,
112a first extending portion, 112b second extending portion, 114 driving spring portion,
116 movable electrode for driving, 116a protrusion, 120 detector, 122 support for detection,
122a third extension part, 122b fourth extension part, 124 spring part for detection,
126 movable electrode for detection, 130 fixed electrode for driving, 140 fixed electrode for detection,
150 fixed part, 200 electronic device, 1100 personal computer,
1102 Keyboard, 1104 Main unit, 1106 Display unit,
1108 Display unit, 1200 mobile phone, 1202 operation buttons, 1204 earpiece,
1206 Mouthpiece, 1208 Display unit, 1300 Digital still camera,
1302 Case, 1304 Light receiving unit, 1306 Shutter button,
1308 Memory, 1310 Display unit, 1312 Video signal output terminal,
1314 Input / output terminal, 1430 TV monitor,
1440 personal computer

Claims (10)

A substrate;
A lid placed on the substrate;
A functional element placed in a cavity surrounded by the base and the lid;
Including
At least one of the base and the lid is provided with a through hole and a sealing member that closes the through hole,
A metal layer is provided on a surface defining the cavity of at least one of the base and the lid;
The metal layer is an electronic device provided to overlap the first opening on the cavity side of the through hole in plan view. In claim 1,
In the electronic device, the area of the second opening on the side opposite to the first opening is larger than the area of the first opening. In claim 2,
The functional device is an electronic device that is disposed at a position that does not overlap the first opening in plan view. In any one of Claims 1 thru | or 3,
The said metal layer is an electronic device containing the element contained in the said sealing member. In any one of Claims 1 thru | or 4,
An electronic device in which silicon is used for the lid. In any one of Claims 1 thru | or 5,
The substrate is glass;
The functional element is an electronic device which is a gyro sensor using silicon. Placing the functional element on the substrate;
Preparing a lid,
Forming a through hole in at least one of the base and the lid;
Forming a metal layer on at least one of the base and the lid;
Placing the lid on the base and storing the functional element in a cavity surrounded by the base and the lid;
Placing a sealing member in the through hole;
Melting the sealing member with an energy beam and closing the through hole;
Including
The metal layer is
A method for manufacturing an electronic device, which is a surface defining at least one of the cavities of the base and the lid, and is formed at a position overlapping the first opening on the cavity side of the through hole in plan view. In claim 7,
In the step of closing the through hole,
The method for manufacturing an electronic device, wherein the metal layer is heated to a temperature equal to or higher than a eutectic temperature of the metal of the sealing member and the metal of the metal layer. In claim 7 or 8,
In the step of closing the through hole,
A method for manufacturing an electronic device, comprising: depressurizing the cavity through the through hole and then melting the sealing member.   An electronic apparatus comprising the electronic device according to claim 1.