JP2013077611A - Method of manufacturing semiconductor light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting device, capable of preventing creeping up of thermo-setting resin, interposed between a semiconductor layer and a support substrate, to the semiconductor layer and a side face of a growth substrate.SOLUTION: A semiconductor crystal is allowed to grow on a sapphire substrate 10 to form a semiconductor layer 20. A resin layer 40 made from thermo-setting resin is formed on the surface of a support substrate 30. Under such condition as the semiconductor layer 20 and the support substrate 30 are tightly fitted together with the resin layer 40 in between, the resin layer 40 is thermo-set so that the support substrate 30 and the semiconductor layer 20 are joined together. After thermo-setting of the resin layer 40, the sapphire substrate 10 is removed. Before the support substrate 30 and the semiconductor layer 20 are joined together, a fluidity control part 41 that decreases or negates fluidity of the resin layer 40 is formed at a surface layer part in a peripheral region at a portion contacting to the semiconductor layer 20 of the resin layer 40.

Description

  The present invention relates to a semiconductor light emitting device such as an LED (light emitting diode), and more particularly to a method for manufacturing a semiconductor light emitting device including a step of removing a growth substrate used for crystal growth of a semiconductor layer by a laser lift-off method.

  Light emitting elements such as LEDs have been improved in efficiency and output due to recent technological advances. However, as the output increases, the amount of heat generated from the light emitting element also increases, resulting in a decrease in reliability. To solve this problem, a growth substrate having a relatively low thermal conductivity used for crystal growth is removed, and instead a so-called thin-film structure LED that supports a semiconductor layer with a member having a relatively high thermal conductivity. Has been proposed. According to the thin-film structure, the heat dissipation of the light emitting element can be improved, and the light extraction efficiency can be improved by removing the growth substrate. For example, a laser lift-off (LLO) method in which GaN is decomposed by irradiating a laser from the back side of the growth substrate is known as a method for peeling the growth substrate from a semiconductor layer containing a GaN-based semiconductor crystal.

When the growth substrate is removed by the laser lift-off (LLO) method, N ₂ gas is generated with the decomposition of the GaN crystal, and a crack may be generated in the semiconductor layer due to the impact. In order to prevent this, there is a method in which when the semiconductor layer is bonded to the support substrate, the space between them is filled with resin, and the semiconductor layer is firmly fixed on the support substrate. For example, in Patent Document 1, a liquid underfill material is filled between a support substrate and a semiconductor layer flip-chip connected to the support substrate and cured, and then the growth substrate is removed by a laser lift-off method. It is described to be removed.

JP 2006-344971 A

  FIG. 1 is a cross-sectional view showing a conventional method for manufacturing a semiconductor light emitting device. After the semiconductor layer 20 is formed on the sapphire substrate 10, the p electrode and the n electrode are formed and separated into chips. Thereafter, the support substrate 30 on which the electrodes corresponding to the p electrode and the n electrode are formed on the surface and the semiconductor layer 20 are bonded by a method such as eutectic bonding. Next, the liquid thermosetting resin 40 is filled so as to fill the space between the semiconductor layer 20 and the support substrate 30. Thereafter, the thermosetting resin 40 is thermoset by heat treatment. Next, the sapphire substrate 10 is removed by a laser lift-off method.

  According to such a manufacturing method, when the liquid thermosetting resin 40 is filled, the thermosetting resin 40 crawls up to the side surface of the semiconductor layer 20 and the side surface of the sapphire substrate 10, and peeling of the sapphire substrate 10 is difficult. There is a case. If the sapphire substrate 10 is to be peeled off in such a state, stress may be applied to the semiconductor layer 20 to cause cracks.

  The thermosetting resin 40 may be supplied onto the support substrate 30 before the support substrate 30 and the semiconductor layer 20 are joined. In this case as well, pressure application is performed when the semiconductor layer 20 and the support substrate 30 are bonded together. As a result, the thermosetting resin 40 may crawl up to the side surface of the semiconductor film 20 and the side surface of the sapphire substrate 10.

  The present invention has been made in view of the above points, and can prevent creeping of the thermosetting resin interposed between the semiconductor layer and the support substrate to the side surfaces of the semiconductor layer and the growth substrate. An object of the present invention is to provide a method for manufacturing a semiconductor light emitting device.

  The method of manufacturing a semiconductor light emitting device of the present invention includes a step of growing a semiconductor crystal on a growth substrate to form a semiconductor layer, a step of forming a resin layer made of a thermosetting resin on the surface of the support substrate, A step of thermally curing the resin layer in a state where the semiconductor layer and the support substrate are in close contact with a resin layer interposed therebetween, and joining the support substrate and the semiconductor layer; A step of removing the growth substrate, and a periphery of a portion of the resin layer in contact with the semiconductor layer before the step of bonding the support substrate and the semiconductor layer. The method includes a step of forming a flow suppression portion that reduces or loses the fluidity of the resin layer in the surface layer portion of the region.

  According to the method for manufacturing a semiconductor light emitting device according to the present invention, before the step of bonding the support substrate and the semiconductor layer, the fluidity of the resin layer is reduced in the surface layer portion of the peripheral region of the resin layer in contact with the semiconductor layer. Alternatively, since the flow suppressing part to be lost is formed, it is possible to prevent the resin material from creeping up to the side surface of the semiconductor layer and the side surface of the growth substrate when the semiconductor layer and the support substrate are bonded with the resin layer interposed therebetween. it can. This makes it possible to remove the support substrate without damaging the semiconductor film.

It is sectional drawing which shows the manufacturing method of the conventional semiconductor light-emitting device. 2A to 2D are cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to Example 1 of the invention. 3A to 3D are cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to Example 1 of the invention. 4A to 4C are cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to Example 1 of the invention. It is a top view which shows the formation area of the thermosetting layer which concerns on the Example of this invention. 6A to 6D are cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to Example 2 of the invention. 7A to 7D are cross-sectional views illustrating a method for manufacturing a semiconductor light emitting device according to Example 3 of the invention.

  Embodiments of the present invention will be described below with reference to the drawings. In the drawings shown below, substantially the same or equivalent components and parts are denoted by the same reference numerals.

  2 to 4 are sectional views showing a method for manufacturing a semiconductor light emitting device according to Example 1 of the invention.

(Formation of semiconductor layer)
A sapphire substrate 10 is prepared as a growth substrate for growing a semiconductor crystal. The sapphire substrate 10 is heated at 1000 ° C. for 10 minutes in a hydrogen atmosphere to perform thermal cleaning of the sapphire substrate 10. Next, the low temperature buffer layer 21, the underlying GaN layer 22, the n-type GaN layer 23, the active layer 24, the p-type AlGaN cladding layer 25, and the p-type GaN layer 26 are formed on the sapphire substrate 10 by MOCVD (metal organic chemical vapor deposition). A semiconductor layer 20 made of is formed. Specifically, the substrate temperature is set to 500 ° C., TMG (trimethyl gallium) (flow rate 10.4 μmol / min) and NH ₃ (flow rate 3.3 LM) are supplied for about 3 minutes, and the low-temperature buffer layer 21 made of GaN is formed on the sapphire substrate 10. Form on top. Thereafter, the substrate temperature is raised to 1000 ° C. and held for about 30 seconds to crystallize the low temperature buffer layer 21. Subsequently, while maintaining the substrate temperature at 1000 ° C., TMG (flow rate 45 μmol / min) and NH ₃ (flow rate 4.4 LM) are supplied for about 20 minutes to form the underlying GaN layer 22 having a thickness of about 1 μm. Next, TMG (flow rate 45 μmol / min), NH ₃ (flow rate 4.4 LM) and SiH ₄ (flow rate 2.7 × 10 ⁻⁹ mol / min) as a dopant gas are supplied for about 100 minutes at a substrate temperature of 1000 ° C. An n-type GaN layer 23 of about 5 μm is formed. Subsequently, an active layer 24 is formed on the n-type GaN layer 23. In this example, a multiple quantum well structure made of InGaN / GaN was applied as the active layer 24. That is, five cycles of growth are performed with InGaN / GaN as one cycle. Specifically, the substrate temperature is set to 700 ° C., TMG (flow rate 3.6 μmol / min), TMI (trimethylindium) (flow rate 10 μmol / min), NH ₃ (flow rate 4.4 LM) are supplied for about 33 seconds, and the thickness is about A 2.2 nm InGaN well layer is formed, and then TMG (flow rate 3.6 μmol / min) and NH ₃ (flow rate 4.4 LM) are supplied for about 320 seconds to form a GaN barrier layer having a thickness of about 15 nm. The active layer 24 is formed by repeating this process for five cycles. Next, the substrate temperature was raised to 870 ° C., TMG (flow rate 8.1 μmol / min), TMA (trimethylaluminum) (flow rate 7.5 μmol / min), NH ₃ (flow rate 4.4 LM), and Cp ₂ Mg (bis -cyclopentadienyl Mg) (flow rate 2.9 × 10 ⁻⁷ μmol / min) is supplied for about 5 minutes to form a p-type AlGaN cladding layer 25 having a thickness of about 40 nm. Subsequently, while maintaining the substrate temperature, TMG (flow rate 18 μmol / min), NH ₃ (flow rate 4.4 LM) and Cp ₂ Mg (flow rate 2.9 × 10 ⁻⁷ μmol / min) as a dopant were supplied for about 7 minutes, A p-type GaN layer 26 having a thickness of about 150 nm is formed. On the sapphire substrate 10, a semiconductor layer 20 composed of these layers is formed (FIG. 2A).

(Exposed n-type semiconductor layer)
The semiconductor layer 20 is partially etched from the surface of the p-type GaN layer 26 to form a recess 20a, and the n-type GaN layer 23 is exposed at the bottom of the recess 20a. Specifically, a resist mask (not shown) having an opening in a region exposing the n-type GaN layer 23 is formed on the surface of the p-type GaN layer 26 by photolithography, and then the wafer is subjected to reactive ion etching ( RIE) device. The semiconductor layer 20 is etched from the surface of the p-type GaN layer 26 through the resist mask to form a recess 20a, and the n-type GaN layer 23 is exposed at the bottom of the recess 20a. Thereafter, the resist mask is removed (FIG. 2B).

(Formation of protective film)
A protective film 50 is formed to cover the side surface of the semiconductor layer 20 exposed by forming the recess 20a. Specifically, an SiO ₂ film having a thickness of about 300 nm is formed on the wafer by sputtering or the like. Next, the protective film 50 is formed by patterning the SiO ₂ film by photolithography. Openings 50a and 50b for forming an n-electrode and a p-electrode are formed on the surfaces of the n-type GaN layer 23 and the p-type GaN layer 26, respectively. The protective film 50 is not limited to SiO ₂ and may be composed of other insulating films such as Si ₃ N ₄ or TaN. It is also possible to form an insulator constituting the protective film 50 by electron beam evaporation or CVD (FIG. 2C).

(Formation of n electrode and p electrode)
Ti and Al are sequentially deposited on the surface of the n-type GaN layer 23 exposed in the opening 50a of the protective film 50 to form the n-electrode 61. Thereafter, Pt, Ag, Ti, Pt, and Au are sequentially deposited on the surface of the p-type GaN layer 26 exposed in the opening 50b of the protective film 50 to form the p-electrode 62. Thereafter, Ti, Pt, and Au are sequentially deposited on the n-electrode 61 and the p-electrode 62 to form a bonding layer (not shown) (FIG. 2D).

(Division of semiconductor layers)
An element dividing groove that defines one section of the semiconductor light emitting device is formed in the semiconductor layer 20. Specifically, after a resist material is applied to the surface of the semiconductor layer 20, a resist mask (not shown) having a lattice pattern corresponding to the element dividing grooves is formed through exposure / development processing. Next, the wafer is put into an RIE (reactive ion etching) apparatus, and the semiconductor layer 20 exposed at the opening of the resist mask is etched by dry etching using Cl ₂ plasma to reach the sapphire substrate 10 to form a lattice-shaped element dividing groove. Form. Subsequently, the sapphire substrate 10 is diced along the element dividing grooves to divide the laminate composed of the sapphire substrate 10 and the semiconductor layer 20 into chips (FIG. 3A).

(Preparation of support substrate)
A support substrate 30 for supporting the semiconductor layer 20 is prepared. The support substrate 30 is preferably a member having, for example, higher thermal conductivity than the sapphire substrate 10 and sufficient mechanical strength to support the semiconductor layer 20. As the support substrate 30, for example, a silicon substrate, a ceramic substrate, a glass epoxy substrate, a metal substrate having an insulating layer formed on the surface, or the like can be used. A eutectic metal 31 made of SnAg or the like corresponding to the n electrode 61 and the p electrode 62 is patterned on the surface of the support substrate 30. In addition, it is good also as providing wiring on the support substrate 30 (FIG.3 (b)).

(Formation of thermosetting resin layer)
A thermosetting resin is supplied to the surface of the support substrate 30 to form the resin layer 40. The resin layer 40 can be formed using, for example, a polyimide film (Toray NCF: non-conductive film). The polyimide film is a film-like adhesive in which a thermosetting polyimide adhesive is sandwiched between cover films (PET). The polyimide adhesive can be supplied onto the support substrate 30 by affixing it to the surface of the support substrate 30 after peeling the cover film. The polyimide adhesive is softened (viscosity is lowered) by heating at a temperature within a predetermined range lower than the curing temperature, and can be laminated without forming bubbles on a substrate having irregularities. The polyimide adhesive is affixed on the support substrate 30 heated at about 80 ° C., for example. In addition, it is good also as supplying a liquid thermosetting resin to the surface of the support substrate 30 by methods, such as a dispensing method and a spin coat method (FIG.3 (c)).

(Formation of flow control part)
The peripheral region of the portion of the resin layer 40 formed on the support substrate 30 that is in contact with the semiconductor layer 20 is thermally cured to form a thermosetting layer 41 on the surface layer portion of the resin layer 40. The fluidity of the resin layer 40 is reduced or lost in the thermosetting layer 41. That is, the thermosetting layer 41 functions as a flow suppressing unit that reduces or loses the fluidity of the resin layer 40. Specifically, for example, an excimer laser having a wavelength of 248 nm and an energy density of 300 mJ / cm ² is irradiated to a peripheral region of a portion of the resin layer 40 where the semiconductor layer 20 is in contact to perform partial thermosetting of the resin layer 40 to perform thermosetting. Layer 41 is formed. Only the surface layer portion of the resin layer 40 can be thermally cured by appropriately setting the energy density of the excimer laser. Patterning of the thermosetting layer 41 can be performed by direct drawing by laser scanning, for example. In this thermosetting process, it is not necessary to completely cure the surface layer portion of the resin layer 40. That is, the thermosetting layer 41 may be in a gel state as long as it has a function of reducing or losing the fluidity of the resin layer 40 (FIG. 3D).

  FIG. 5 is a top view of the support substrate 30 on the surface of which the resin layer 40 is formed. In FIG. 5, a portion corresponding to the outer edge of the semiconductor layer 20 to be contacted in a later step is indicated by a broken line, and the thermosetting layer 41 is indicated by hatching. That is, the inner side of the broken line in FIG. The thermosetting layer 41 is formed in a peripheral region of a portion of the resin layer 40 that is in contact with the semiconductor layer 20 and is provided at a position in contact with (overlaps) the outer edge portion of the semiconductor layer 20. The thermosetting layer 41 is formed to have a rectangular annular pattern, for example. The thermosetting layer 41 is formed outside the formation region of the n-electrode 61, the p-electrode 62, and the eutectic metal 31 corresponding to these electrodes.

(Division of support substrate)
The support substrate 30 is divided into chips by a method such as dicing. One piece of the support substrate 30 has a size that is slightly larger than, for example, the size of the stacked body formed of the sapphire substrate 10 and the semiconductor layer 20 that have been separated into pieces in the previous step. In FIG. 5, the dividing line of the support substrate 30 is indicated by a one-dot chain line. In addition, the polyimide film which comprises the resin layer 40 can be diced with the support substrate 30 in the sheet | seat state before thermosetting (FIG. 4 (a)).

(Semiconductor layer and support substrate bonding)
By heating the separated support substrate 30 at about 80 ° C., the resin layer 40 is softened or liquefied, and the resin layer 40 has fluidity. At this time, the thermosetting layer 41 formed by irreversible thermosetting maintains a solid state. In a state where the viscosity of the resin layer 40 is low, the pieces of the semiconductor layer 20 and the pieces of the support substrate 30 are brought into close contact with each other, and a pressure is applied. Positioning is performed such that the n-electrode 61 and the p-electrode 62 formed on the semiconductor layer 20 and the eutectic metal 31 formed on the support substrate 30 are in contact with each other. The inner portion of the semiconductor layer 20 is in contact with the low viscosity portion of the resin layer 40. On the other hand, the outer edge portion of the semiconductor layer 20 is in contact with the thermosetting layer 41 formed by the previous thermosetting process. Further, a thermosetting layer 41 extends outside the outer edge of the semiconductor layer 20 so as to surround the semiconductor layer 20. Thus, since the thermosetting layer 41 having no fluidity is formed in the peripheral region of the contact portion of the resin layer 40 with the semiconductor layer 20, the individual semiconductor layers 20 are added to the softened or liquefied resin layer 40. Even if the piece is pressed, the resin material does not creep up on the side surface of the semiconductor layer 20 and the side surface of the sapphire substrate 10.

  In a state where the semiconductor layer 20 and the support substrate 30 are in close contact and pressure, the ambient temperature is raised to about 250 ° C. Thereby, the n-electrode 61 and the p-electrode 62 formed on the semiconductor layer 20 and the eutectic metal 31 formed on the support substrate 30 form a eutectic bond, and the resin layer 40 is cured. That is, the stacked body composed of the semiconductor layer 20 and the growth substrate 10 is firmly fixed to the surface of the support substrate 30 (FIG. 4B). The bonding between the semiconductor layer 20 and the support substrate 30 is not limited to eutectic bonding, and may be metal bonding such as Au—Au bonding.

(Removal of growth substrate)
The sapphire substrate 10 is peeled from the semiconductor layer 20. A laser lift-off method can be used for peeling the sapphire substrate 10. Specifically, an excimer laser with a wavelength of 248 nm and an energy density of 850 mJ / cm ² is irradiated from the back side of the sapphire substrate 10 (the side opposite to the surface on which the semiconductor layer 20 is formed). Thereby, the GaN crystal in the vicinity of the interface with the sapphire substrate 10 is decomposed into Ga and N ₂ gas, and the sapphire substrate 10 is separated from the semiconductor layer 20. Since the semiconductor layer 20 is firmly fixed on the support substrate 30 via the resin layer 40, the impact caused by the generation of N ₂ gas is reduced, and the occurrence of cracks in the semiconductor layer 20 is prevented. Further, since the resin material no longer creeps up on the side surface of the semiconductor layer 20 and the side surface of the sapphire substrate 10 by the flow suppressing portion 41, the sapphire substrate 10 can be easily formed without damaging the semiconductor layer 20 after laser irradiation. It can be removed (FIG. 4C). The laser used for laser lift-off is not limited to the excimer laser, but may be another laser such as a YAG laser. The semiconductor light emitting device is completed through the above steps.

  A method for manufacturing a semiconductor light emitting device according to Example 2 of the present invention will be described below. The manufacturing method according to the second embodiment is different from the first embodiment described above in the step of forming the flow suppressing portion on the surface of the resin layer 40. Since other steps are the same as those according to the first embodiment, the description thereof will be omitted.

  FIGS. 6A to 6D are cross-sectional views showing a flow suppressing portion forming process in the method for manufacturing a semiconductor light emitting device according to the second embodiment of the present invention. A resin layer 40 is formed on the support substrate 30. A protective tape 70 having an opening in the peripheral region (region where the flow suppressing portion is formed) of the portion of the resin layer 40 in contact with the semiconductor layer 20 is attached to the surface of the resin layer 40 (FIG. 6A).

  Next, a metal layer 41a made of a metal such as Al or Cu is formed on the resin layer 40 to which the protective tape 70 is attached by vapor deposition or sputtering. The metal layer 41a is formed on the surface of the protective tape 70 and on the surface of the resin layer 40 exposed at the opening of the protective tape 70 (FIG. 6B).

  Next, the metal layer 41a deposited on the protective tape 70 is removed together with the protective tape 70 (FIG. 6C). Thereafter, the support substrate 30 is separated into chips by a method such as dicing (FIG. 6D).

The metal layer 41a formed on the surface of the resin layer 40 can function as a flow suppression unit that reduces or loses the fluidity of the surface layer portion of the resin layer 40, like the thermosetting layer 41 in the first embodiment. Similar to the thermosetting layer 41 according to the first embodiment, the metal layer 41a is formed in a peripheral region of a portion of the resin layer 40 where the semiconductor layer 20 is in contact, and has, for example, a rectangular pattern (see FIG. 5). In the above description, the case where the flow suppressing portion is formed of the metal layer is exemplified, but the flow suppressing portion may be formed of a solid material other than metal. In other words, the flow suppression unit can be formed by an existing method such as a vapor deposition method, a sputtering method, or a CVD method, and can be formed of a material that maintains a solid state at the curing temperature of the resin layer 40. Examples of other candidate materials that constitute the flow suppression unit include SiO ₂ .

  As described above, by forming the flow suppressing portion constituted by the metal layer 41a and the like on the resin layer 40, the resin material creeps up to the side surface of the semiconductor layer and the side surface of the sapphire substrate as in the case of the above-described first embodiment. The sapphire substrate can be easily removed without damaging the semiconductor layer by a laser lift-off method or the like.

  The method for manufacturing the semiconductor light emitting device according to Example 3 of the present invention will be described below. The manufacturing method according to the third embodiment is different from the first embodiment described above in the step of forming the flow suppression portion on the surface of the resin layer 40. Other steps are the same as those according to the first embodiment described above, and the description thereof is omitted.

  FIGS. 7A to 7D are cross-sectional views showing a flow suppressing portion forming step in the method for manufacturing a semiconductor light emitting device according to the third embodiment of the present invention. A resin layer 40 is formed on the support substrate 30. A protective tape 70 having an opening in a peripheral region (region where a flow suppressing portion is formed) of a portion of the resin layer 40 in contact with the semiconductor layer 20 is attached to the surface of the resin layer 40 (FIG. 7A).

  Next, a UV curable resin is applied on the resin layer 40 to which the protective tape 70 is attached by a spin coating method or the like to form a UV curable resin layer 41b. The UV curable resin layer 41 b is formed on the surface of the protective tape 70 and the surface of the resin layer 40 made of a thermosetting resin exposed at the opening of the protective tape 70. Subsequently, the surface of the support substrate 30 is irradiated with UV light to cure the UV curable resin layer 41b. Since the UV curable resin layer 41b has a different curing method from the resin layer 40, only the UV curable resin layer 41b can be cured (FIG. 7B).

  Next, the UV curable resin layer 41b deposited on the protective tape 70 is removed together with the protective tape 70 (FIG. 7C). Thereafter, the support substrate 30 is separated into chips by a method such as dicing (FIG. 7D).

  The UV curable resin layer 41b formed on the surface of the resin layer 40 can function as a flow suppressing part that reduces or loses the fluidity of the surface layer part of the resin layer 40, like the thermosetting layer 41 in the first embodiment. it can. Similar to the thermosetting layer 41 according to the first embodiment, the UV curable resin layer 41b is formed in a peripheral region of a portion of the resin layer 40 that is in contact with the semiconductor layer 20, and has, for example, a rectangular pattern (see FIG. 5). In this manner, by forming the flow suppressing portion constituted by the UV curable resin layer 41b on the resin layer 40, the resin material is spread on the side surface of the semiconductor layer and the side surface of the sapphire substrate as in the case of the above-described first embodiment. The rising can be prevented, and the sapphire substrate can be easily removed without damaging the semiconductor layer by a laser lift-off method or the like.

  As is apparent from the above description, according to the method for manufacturing a semiconductor light emitting device according to each embodiment of the present invention, the resin layer 40 made of a thermosetting resin is interposed between the semiconductor layer 20 and the support substrate 30. Therefore, the semiconductor layer 20 is firmly fixed on the support substrate 30. As a result, damage to the semiconductor layer 20 when removing the growth substrate by the laser lift-off method can be mitigated. By the way, when the gap between the semiconductor layer and the support substrate is small, it is generally not easy to fill the gap with the resin material afterwards. However, as shown in each of the above-described embodiments, the resin layer 40 is formed on the support substrate 30 before the semiconductor layer 20 and the support substrate 30 are joined, so that the semiconductor layer 20 and the support substrate 30 are separated from each other. Even when the gap between them is relatively small, the resin layer 40 can be interposed in these gaps. That is, according to the manufacturing method according to each embodiment of the present invention, even when the semiconductor layer and the support substrate have no relatively high structure such as a bump as a bonding member between the semiconductor layer and the support substrate, It becomes possible to interpose a resin layer between them.

  In addition, according to the method for manufacturing a semiconductor light emitting device according to each embodiment of the present invention, the flow suppressing portion that reduces or loses the fluidity of the resin layer 40 is formed in the peripheral region of the portion of the resin layer 40 in contact with the semiconductor layer 20. Therefore, even if the semiconductor layer 20 and the support substrate 30 are brought into close contact with each other and pressure is applied, the resin material can be prevented from creeping up to the side surface of the semiconductor layer 20 and the side surface of the sapphire substrate 10. Accordingly, the sapphire substrate 10 can be removed without applying stress to the semiconductor layer 20. Further, by providing the flow suppressing portion at a position in contact with (overlapping) the outer edge portion of the semiconductor layer 20, it is possible to reliably prevent the resin material from creeping up.

  In each of the above-described embodiments, the semiconductor layer 20 and the support substrate 30 are separated and then bonded together. However, the semiconductor layer and the support substrate are bonded at the wafer level, and then chip-shaped. It is good also as separating. In this case, by forming the flow suppressing portion along the outer edge portion of the wafer-like support substrate, it is possible to prevent the resin material from creeping up to the side surface of the semiconductor wafer. In this case, the polyimide tape attached to the surface of the wafer-like support substrate may be a sheet corresponding to the wafer shape or may be divided into chips.

  An anisotropic conductive adhesive can be used as the material for the resin layer 40. An anisotropic conductive adhesive is a resin material in which fine metal particles having conductivity are mixed with a thermosetting resin, and a conductive path is formed only in a specific direction by applying heat and pressure. It is. When an anisotropic conductive adhesive is used, a eutectic bonding layer for electrically connecting the semiconductor layer 20 and the support substrate 30 becomes unnecessary, and only an electrode pad is provided on the semiconductor layer 20 and the support substrate 30. Good.

DESCRIPTION OF SYMBOLS 10 Sapphire substrate 20 Semiconductor layer 30 Support substrate 40 Resin layer 41 Thermosetting layer 41a Metal layer 41b UV curable resin layer

Claims (9)

Forming a semiconductor layer by growing a semiconductor crystal on a growth substrate;
Forming a resin layer made of a thermosetting resin on the surface of the support substrate;
Bonding the support substrate and the semiconductor layer by thermosetting the resin layer in a state where the semiconductor layer and the support substrate are in close contact with the resin layer interposed therebetween;
Removing the growth substrate after thermosetting the resin layer, and a method for manufacturing a semiconductor light emitting device,
Before the step of bonding the support substrate and the semiconductor layer, a flow suppressing portion that reduces or loses the fluidity of the resin layer is formed in a surface layer portion of a peripheral region of the resin layer that is in contact with the semiconductor layer. The manufacturing method characterized by including a process.   The manufacturing method according to claim 1, wherein the flow suppression unit is in a solid state or a gel state.   The manufacturing method according to claim 1, wherein the step of forming the flow suppressing part includes a process of thermally curing a surface layer part in a peripheral region of a part of the resin layer that is in contact with the semiconductor layer.   The manufacturing method according to claim 3, wherein in the step of forming the flow suppressing portion, the resin layer is partially thermally cured by laser irradiation.   The step of forming the flow suppressing portion includes a process of forming a solid material layer that maintains a solid state at a curing temperature of the resin layer on a surface of a peripheral region of a portion of the resin layer that is in contact with the semiconductor layer. The manufacturing method according to claim 1 or 2.   The manufacturing method according to claim 5, wherein the solid material layer is a metal layer.   The step of forming the flow suppressing portion includes a process of supplying a photocurable resin to a surface of a peripheral region of a portion of the resin layer that is in contact with the semiconductor layer, and curing the photocurable resin. The manufacturing method of Claim 1 or 2.   The manufacturing method according to claim 1, wherein in the step of bonding the support substrate and the semiconductor layer, the flow suppressing portion is in contact with an outer edge portion of the semiconductor layer.   The manufacturing method according to claim 1, wherein the semiconductor layer includes a group III nitride semiconductor crystal, and the growth substrate is removed by a laser lift-off method.

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