JP2013050408A - Temperature cycle test apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a temperature cycle test apparatus, which allows a temperature cycle test of a test object like a semiconductor wafer without causing peculiar problems such as scratches on the semiconductor itself and attachment of dust within a test chamber.SOLUTION: The temperature cycle test apparatus comprises: a test chamber 1; and a wafer chuck 3 (control part) that controls the temperature of a semiconductor wafer 2 (test object). The wafer chuck 3 includes: an installation area 31 where the semiconductor wafer 2 is placed within the test chamber 1; and a temperature adjustment function for changing, from the outside of the test chamber 1, the temperature of the semiconductor wafer 2 by thermal conduction.

Description

  The present invention relates to a temperature cycle test apparatus, and more particularly to a temperature cycle test apparatus for testing a semiconductor wafer.

  As semiconductor devices are highly integrated, Via Hole and initial deterioration defects of wiring systems are increasing. Therefore, in addition to the temperature cycle test after packaging that has been conventionally performed, a temperature cycle test in a wafer state has been studied and implemented. On the other hand, when a temperature cycle test is performed in a wafer state, there are many problems that must be solved, such as adhesion of particles and generation of scratches.

A conventional general temperature cycle test apparatus includes a test tank, a high-temperature tank and a heater, a low-temperature tank and a cooler, and a damper. And the gas (gas, such as air or N2) made into high temperature beforehand is stored in the high temperature tank, the gas made into low temperature is stored in the low temperature tank, and they are introduce | transduced into a test tank with a damper. The object to be tested is exposed to high or low temperature due to the high or low temperature gas introduced into the test chamber, but the desired temperature cannot be reached simply by changing the gas, so the heater or cooler heats the air in the test chamber. Or cool. Such a temperature cycle test apparatus is disclosed in, for example, Patent Documents 1 and 2 and Non-Patent Document 1.
Another type of temperature cycle testing apparatus that is composed of a high-temperature bath and a heater, a low-temperature bath and a cooler and in which the test object moves between the high-temperature bath and the low-temperature bath is also commercialized. Such a temperature cycle test apparatus is disclosed in Patent Document 3 and Non-Patent Document 2, for example.

Japanese Patent Laid-Open No. 5-267418 Japanese Patent No. 2786688 JP 2007-333559 A

ESPEC CORP. Cold Thermal Shock Equipment TSA Series (Product Catalog) October 2010 ESPEC CORP. Thermal Shock Device TSD-100 (Product Catalog) March 2008

In a conventional general temperature cycle test apparatus, a high-temperature or low-temperature gas is introduced into a test tank to apply a temperature stress to the object to be tested. At that time, in order to obtain a rapid temperature change, it is necessary to introduce the gas into the test tank at a large flow rate. Also, a large amount of gas is introduced into the test tank during additional heating or cooling after the damper is released.
Even in a temperature cycle test apparatus of a type in which the DUT moves between a high-temperature tank and a low-temperature tank, the DUT is exposed to a high-temperature or low-temperature gas flow in the high-temperature tank and the low-temperature tank.

When the device under test of the temperature cycle test apparatus is a semiconductor wafer, the processing is performed in place of the carrier. The semiconductor wafer during the temperature cycle test is shaken or rotated in the carrier by the flow of high or low temperature gas.
As a result, there is a problem that the semiconductor wafer is scratched at the portion where the semiconductor wafer and the carrier are in contact.
In addition, the contact portion where the semiconductor wafer contacts the carrier is scraped due to the same cause, and there is a problem that it adheres to the semiconductor wafer as dust.
Furthermore, in a conventional general temperature cycle test apparatus, in the type of temperature cycle test apparatus in which dust generated from a damper for switching between high temperature and low temperature, or a test object moves between a high temperature tank and a low temperature tank, There is a problem that dust generated from the elevator section for moving the DUT adheres to the semiconductor wafer.

One aspect of the temperature cycle test apparatus according to the present invention includes a test tank and a control unit that controls the temperature of the DUT. The said control part is provided with the installation area | region which arrange | positions the said to-be-tested object in the said test tank, and the temperature adjustment part which changes the temperature of the said to-be-tested object from the exterior of the said test tank by heat conduction.
The temperature cycle test apparatus of the present invention has a function of adjusting the temperature of the DUT from the outside of the test tank 1, specifically, a temperature adjustment function by heat conduction. For this reason, it is not necessary to replace the air in the test tank 1. Or it is not necessary to move the to-be-tested object in a test tank to the test tank from which temperature differs. Thus, the temperature cycle test apparatus of the present invention does not require the generation of air flow around the device under test. As a result, it is possible to prevent the DUT from being damaged by the air flow and the dust from being attached thereto. In addition, it is possible to prevent generation of dust based on a mechanism that generates an air flow. Therefore, it is possible to prevent the object to be tested from being damaged or dust from adhering during the temperature cycle test.

  According to the present invention, by providing a mechanism for controlling the temperature of the DUT from the outside of the test tank, it is possible to avoid the addition of scratches to the DUT and adhesion of dust.

It is sectional drawing which shows the structural example of the temperature cycle test apparatus which concerns on Embodiment 1 of this invention. It is II-II sectional drawing which shows the structural example of the temperature cycle test apparatus which concerns on Embodiment 1 of this invention. It is sectional drawing which shows the structural example of the temperature cycle test apparatus which concerns on Embodiment 2 of this invention. It is sectional drawing which shows the structural example of the temperature cycle testing apparatus which concerns on Embodiment 3 of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. For clarity of explanation, the following description and drawings are omitted and simplified as appropriate. In the drawings, components having the same configuration or function and corresponding parts are denoted by the same reference numerals and description thereof is omitted.

Embodiment 1. FIG.
* Configuration of Embodiment 1 FIG. 1 is a cross-sectional view showing a configuration example of Embodiment 1, and FIG. 2 is a cross-sectional view taken along line II-II shown in FIG. FIG. 1 corresponds to a cross-sectional view taken along the line II shown in FIG. The temperature cycle test apparatus 101 includes a test tank 1 and a wafer chuck (control unit) 3, and shows a state where a semiconductor wafer (test object) 2 is installed in an installation area 31 of the wafer chuck 3. The wafer chuck 3 has a function of adjusting the temperature of the device under test (function of a temperature adjusting unit) with the entire surface of the wafer chuck 3 having a surface disposed in the test chamber 1 as an installation region 31. The wafer chuck 3 is disposed in the lower part of the test chamber 1 and is formed of a metal or the like (for example, copper) having high thermal conductivity for mounting the semiconductor wafer 2. An introduction path 4 for introducing a liquid or gas for heating or cooling the wafer chuck 3 is formed inside the wafer chuck 3. The introduction path 4 has an inlet 41 for injecting liquid or gas or the like and an outlet 42 for discharging liquid or gas or the like from the introduction path 4. In FIG. 2, a state in which the introduction path 4, the injection port 41, and the discharge port 42 are seen through using dotted lines is shown.

* Operation or Manufacturing Method of Embodiment 1 Next, the operation of Embodiment 1 of the present invention will be described with reference to the drawings. A semiconductor wafer 2 as a test object is placed on a wafer chuck 3. An introduction path 4 for introducing a liquid or gas for heating or cooling the wafer chuck 3 is provided inside the wafer chuck 3. When heating the semiconductor wafer 2, high-temperature water vapor or the like is introduced from the inlet 41 into the introduction path 4 to heat the wafer chuck 3. Water vapor or the like that has heated the wafer chuck 3 is discharged from the discharge port 42 via the introduction path 4. The semiconductor wafer 2 is heated by heat conduction from the wafer chuck 3. When cooling the semiconductor wafer 2, low temperature liquid nitrogen or the like is introduced from the inlet 41 into the introduction path 4 to cool the wafer chuck 3. Liquid nitrogen or the like that has cooled the wafer chuck 3 is discharged from the discharge port 42 via the introduction path 4. The semiconductor wafer 2 is cooled by heat conduction from the wafer chuck 3.

A temperature cycle test is performed by repeating overheating / cooling of the wafer chuck 3. In the drawings of this embodiment, only one set of introduction path, injection port, and discharge port is provided for the sake of simplicity. However, in order to make the temperature of the wafer chuck 3 uniform and to increase the heating / cooling rate. In addition, a plurality of introduction paths, injection ports, and discharge ports may be provided. Further, when heating, the same effect can be obtained by means of hot wire or the like.
In addition, FIG. 1 shows a case where the introduction path 4 has a shape along a cross section for easy explanation, but the present invention is not limited to this, and a concentric shape corresponding to the shape of the semiconductor wafer 2 is shown. The introduction path or other shapes may be used. 2 shows a case where the wafer chuck 3 has the same shape as that of the semiconductor wafer 2, the present invention is not limited to this, and a rectangular shape or other shapes may be used. As shown in FIG. 2, it is preferable that the wafer chuck 3 has a similar shape larger than the outer shape of the semiconductor wafer, since the uniformity of heat conduction of the semiconductor wafer 2 becomes good.

* Mechanism and Effect of Embodiment 1 The temperature cycle test apparatus of the present invention heats / cools the wafer chuck 3 from the outside of the test chamber 1 and heats / cools the semiconductor wafer 2 on the wafer chuck 3 by heat conduction. Like the conventional temperature cycle test apparatus, it has a structure that does not introduce gas or the like into the test chamber 1. Since no gas or the like is introduced into the test chamber 1, the phenomenon that the semiconductor wafer 2 rotates or shakes does not occur. Therefore, there is an effect that scratches and dust are not generated on the semiconductor wafer 2. Moreover, since there are no devices such as dampers and elevators in the test chamber 1, there is no dust from these devices.

Embodiment 2
In the second embodiment, one mode for sharpening the temperature change during heating / cooling compared to the first embodiment will be described.
* Configuration of Second Embodiment FIG. 3 is a cross-sectional view showing a configuration example of a temperature cycle test apparatus according to the second embodiment. The temperature cycle test apparatus 102 includes a test tank 1 and a wafer chuck (control unit) 7. The wafer chuck 7 according to the present embodiment includes an installation area 71 and a plurality of temperature adjusting units that adjust the temperature of the test object. In FIG. 3, a high temperature chuck 72 and a low temperature chuck 73 are shown as an example of a plurality of temperature adjustment units. The installation area 71 and the plurality of temperature adjustment units can be separated, and the installation area 71 can be configured by replacing the high temperature chuck 72 and the low temperature chuck 73.
The installation area 71, the high temperature chuck 72, and the low temperature chuck 73 are formed of a metal having a high thermal conductivity.
The installation area 71 is arranged in the lower part of the test tank 1 and places the semiconductor wafer 2 thereon. The installation area 71 is formed of a metal or the like having a high thermoelectric equality as in the installation area 31 of the first embodiment.
The high temperature chuck 72 is installed below the installation area 71 of the wafer chuck 7 when the wafer chuck 7 is heated, and the low temperature chuck 73 is installed below the installation area 71 of the wafer chuck 7 when the wafer chuck 7 is cooled.
Inside the high temperature chuck 72, an introduction path 5 for introducing liquid or gas for heating the high temperature chuck 72, an inlet 51 for injecting liquid or gas into the introduction path 5, and a liquid or gas from the introduction path 5 It has a discharge port 52 for discharging etc. Inside the low temperature chuck 73, an introduction path 6 for introducing a liquid or gas for cooling the low temperature chuck 73, an inlet 61 for injecting a liquid or gas into the introduction path 6, and a liquid or gas from the introduction path 6 It has a discharge port 62 for discharging etc.

* Operation or Manufacturing Method of Embodiment 2 Next, the operation of Embodiment 2 of the present invention will be described with reference to the drawings. A semiconductor wafer 2 as a test object is placed on a wafer chuck 7. The high temperature chuck 72 is always kept at a high temperature. The operation of heating the high temperature chuck 72 is the same as the operation of the wafer chuck 3 at the high temperature of the first embodiment. The low temperature chuck 73 is always kept at a low temperature. The operation of cooling the low temperature chuck 73 is the same as the operation of the wafer chuck 3 at the low temperature of the first embodiment.

Next, the operation when heating / cooling the semiconductor wafer 2 will be described. When heating the semiconductor wafer 2, the high temperature chuck 72 is brought into contact with the lower portion of the installation area 71. Since the high temperature chuck 72 is held at a high temperature in advance, the installation region 71 is heated by heat conduction from the high temperature chuck 72, and the semiconductor wafer 2 is also heated by heat conduction. When the semiconductor wafer 2 is cooled, the high temperature chuck 72 is moved from the lower part of the installation area 71, and instead, the low temperature chuck 73 is brought into contact with the lower part of the installation area 71. Since the low temperature chuck 73 is held in advance at a low temperature, the installation region 71 is cooled by heat conduction from the low temperature chuck 73, and the semiconductor wafer 2 is also cooled by heat conduction. The temperature cycle test is performed by repeating these operations. In the present embodiment, in order to simplify the description, a means for moving the high temperature chuck 72 and the low temperature chuck 73 is not described, but the chuck can be replaced using an arbitrary mechanical mechanism.
Although FIG. 3 has been described using the two temperature adjustment units of the high temperature chuck 72 and the low temperature chuck 73, the present invention is not limited to this. The temperature adjustment unit only needs to have two or more temperature adjustment units for adjusting the wafer chuck 7 to different temperatures.

* Mechanism and effect of the second embodiment In the second embodiment, the heating / cooling mechanism (temperature adjusting unit) of the wafer chuck 7 of the temperature cycle test apparatus 102 is separated from the installation area 71, the high-temperature chuck 72 dedicated to high temperature, and the low-temperature dedicated chuck By adding the low temperature chuck 73, the temperature change at the time of heating / cooling can be sharpened as compared with the temperature cycle apparatus 101 of the first embodiment.

Embodiment 3
In the third embodiment, a case where a vacuum is applied to the test chamber 1 will be described. FIG. 4 is a cross-sectional view showing a configuration example of the temperature cycle test apparatus according to the third embodiment, and the temperature cycle test apparatus 103 adds a vacuum processing unit 8 for evacuating the test tank 1 to the configuration example of the first embodiment. An example of the configuration is shown. The vacuum processing unit 8 can be realized by a vacuum pump, for example.
As described in the above embodiments, the present invention adjusts the temperature of the semiconductor wafer 2 by heat conduction from the wafer chucks 3 and 7. Therefore, it is not necessary to adjust the temperature of the air unlike the temperature cycle test apparatus of the prior art document. In addition, since the quality of the semiconductor wafer 2 may deteriorate in response to oxygen in the air, the semiconductor wafer 2 is preferably tested in a state where the oxygen content is low, for example, in a vacuum or a nitrogen gas atmosphere. Therefore, by making the inside of the test tank 1 in a vacuum state, it is possible to avoid the necessity of adjusting the temperature of the air in the test tank 1 and to sharpen the temperature change during heating / cooling.
Even if a vacuum processing unit is added to the temperature cycle test apparatus 102 of the second embodiment shown in FIG. 3, the effect of the second embodiment can be further improved.

  As described above, according to the temperature cycle test apparatus of each of the above embodiments, a wafer chuck (control unit) made of a metal having a high thermal conductivity is provided in the test tank, and the wafer chuck is set in the test tank. Since the semiconductor wafer on the wafer chuck is heated / cooled from outside by heating / cooling by heat conduction, scratches and dust are not generated. The temperature cycle test apparatus of the present invention is an apparatus in which a device under test can solve and adapt to the problems specific to a semiconductor wafer.

  In addition, this invention is not limited to embodiment shown above. Within the scope of the present invention, it is possible to change, add, or convert each element of the above-described embodiment to a content that can be easily considered by those skilled in the art.

DESCRIPTION OF SYMBOLS 1 Test tank 2 Semiconductor wafers 3 and 7 Wafer chucks 4, 5, and 6 Introductory path 8 Vacuum processing part 31,71 Installation area | region 41,51,61 Inlet 42,52,62 Outlet 72 High temperature chuck 73 Low temperature chuck 101,102 , 103 temperature cycle test equipment

Claims (4)

A test chamber;
A control unit for controlling the temperature of the DUT,
The control unit includes an installation area in which the DUT is disposed in the test tank,
A temperature cycle test apparatus comprising: a temperature adjusting unit that changes the temperature of the DUT by heat conduction from the outside of the test tank.   The temperature cycle test apparatus according to claim 1, wherein the temperature adjustment unit includes an introduction path for introducing an object that changes the temperature of the control unit by heat conduction.   The temperature adjustment unit is structured to be separable from the installation area, and includes a plurality of temperature adjustment units adjusted to different temperatures, and controls the temperature of the DUT by replacing the plurality of temperature adjustment units. The temperature cycle test apparatus according to claim 1 or 2, wherein   The temperature cycle test apparatus according to claim 1, further comprising a vacuum processing unit that evacuates the inside of the test tank.

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