JP2013020235A - Method for manufacturing pellicle support frame, pellicle support frame, and pellicle - Google Patents
Method for manufacturing pellicle support frame, pellicle support frame, and pellicle Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 37
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims abstract description 36
- 230000008021 deposition Effects 0.000 claims abstract description 30
- 229910018571 Al—Zn—Mg Inorganic materials 0.000 claims abstract description 14
- 239000007864 aqueous solution Substances 0.000 claims abstract description 12
- 230000003287 optical effect Effects 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 6
- 229910052742 iron Inorganic materials 0.000 claims abstract description 5
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 5
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 229910052718 tin Inorganic materials 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims description 29
- 229910000838 Al alloy Inorganic materials 0.000 claims description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 238000000137 annealing Methods 0.000 claims description 18
- 238000007743 anodising Methods 0.000 claims description 14
- 150000003839 salts Chemical class 0.000 claims description 13
- 229910017706 MgZn Inorganic materials 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 claims description 11
- 238000010828 elution Methods 0.000 claims description 9
- 238000002441 X-ray diffraction Methods 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 5
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 claims description 5
- MUBZPKHOEPUJKR-UHFFFAOYSA-L Oxalate Chemical compound [O-]C(=O)C([O-])=O MUBZPKHOEPUJKR-UHFFFAOYSA-L 0.000 claims description 4
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 3
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- 229940005654 nitrite ion Drugs 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 239000000956 alloy Substances 0.000 abstract description 7
- 239000002253 acid Substances 0.000 abstract description 5
- 239000000243 solution Substances 0.000 abstract description 5
- 229910045601 alloy Inorganic materials 0.000 abstract description 4
- 229910000831 Steel Inorganic materials 0.000 abstract 3
- 239000010959 steel Substances 0.000 abstract 3
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 26
- 229910052782 aluminium Inorganic materials 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- 229960004106 citric acid Drugs 0.000 description 9
- -1 nitrate ions Chemical class 0.000 description 9
- 238000005868 electrolysis reaction Methods 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000002244 precipitate Substances 0.000 description 6
- 238000001556 precipitation Methods 0.000 description 6
- 239000010407 anodic oxide Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 4
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 4
- 239000004327 boric acid Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000011975 tartaric acid Substances 0.000 description 4
- 235000002906 tartaric acid Nutrition 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 238000002048 anodisation reaction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004040 coloring Methods 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 150000007522 mineralic acids Chemical class 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005496 tempering Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000000020 Nitrocellulose Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 102100025490 Slit homolog 1 protein Human genes 0.000 description 2
- 101710123186 Slit homolog 1 protein Proteins 0.000 description 2
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N hydrochloric acid Substances Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229940078494 nickel acetate Drugs 0.000 description 2
- 229920001220 nitrocellulos Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229960000999 sodium citrate dihydrate Drugs 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 230000002087 whitening effect Effects 0.000 description 2
- UGNSMKDDFAUGFT-UHFFFAOYSA-N 4,4-dimethyl-2-phenyl-5h-1,3-oxazole Chemical compound CC1(C)COC(C=2C=CC=CC=2)=N1 UGNSMKDDFAUGFT-UHFFFAOYSA-N 0.000 description 1
- 229910018569 Al—Zn—Mg—Cu Inorganic materials 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000003483 aging Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001860 citric acid derivatives Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 229910001651 emery Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229940071264 lithium citrate Drugs 0.000 description 1
- WJSIUCDMWSDDCE-UHFFFAOYSA-K lithium citrate (anhydrous) Chemical compound [Li+].[Li+].[Li+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O WJSIUCDMWSDDCE-UHFFFAOYSA-K 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000001508 potassium citrate Substances 0.000 description 1
- 229960002635 potassium citrate Drugs 0.000 description 1
- QEEAPRPFLLJWCF-UHFFFAOYSA-K potassium citrate (anhydrous) Chemical compound [K+].[K+].[K+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QEEAPRPFLLJWCF-UHFFFAOYSA-K 0.000 description 1
- 235000011082 potassium citrates Nutrition 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- 229960001790 sodium citrate Drugs 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 150000004685 tetrahydrates Chemical class 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Abstract
Description
この発明は、ペリクル用支持枠の製造方法、及びペリクル用支持枠、並びにペリクルに関し、詳しくは、ヘイズ(haze)の発生を可及的に低減でき、かつ、耐光性に優れたペリクル用支持枠を得ることができるペリクル用支持枠の製造方法、及びペリクル用支持枠、並びにペリクルに関する。 The present invention relates to a method for manufacturing a pellicle support frame, a pellicle support frame, and a pellicle. More specifically, the pellicle support frame can reduce the occurrence of haze as much as possible and has excellent light resistance. The present invention relates to a method for manufacturing a pellicle support frame, a pellicle support frame, and a pellicle.
LSI、超LSIなどの半導体装置や液晶表示装置(LCD)等に使用される薄膜トランジスタ(TFT)やカラーフィルター(CF)等の製造では、露光装置を用いたフォトリソグラフィー工程が含まれ、この工程では、通常、ペリクルと呼ばれる防塵手段が用いられる。 Manufacturing of thin film transistors (TFTs) and color filters (CFs) used in semiconductor devices such as LSI and VLSI, liquid crystal display devices (LCDs), etc., includes a photolithography process using an exposure device. Usually, dust-proof means called a pellicle is used.
ペリクルは、一般に、フォトマスクやレティクルに合わせた形状を有する厚さ数ミリ程度のアルミニウム材からなる支持枠の片面側に、厚さ10μm程度のニトロセルロース、セルロース誘導体、フッ素ポリマーなどの透明な高分子膜(光学的薄膜体)を展張して接着したものであり、異物がフォトマスクやレティクル上に直接付着することを防ぐ。また、仮にペリクルに異物が付着したとしても、フォトレジストが塗布されたウエハー上にこれらの異物は結像しないため、異物の像による露光パターンの短絡や断線等を防止でき、フォトリソグラフィー工程の製造歩留まりを向上させることができる。 In general, a pellicle is formed on one side of a support frame made of an aluminum material with a thickness of several millimeters having a shape matched to a photomask or a reticle, and a transparent high layer such as nitrocellulose, cellulose derivative, or fluoropolymer with a thickness of about 10 μm. A molecular film (optical thin film) is stretched and bonded to prevent foreign matter from adhering directly onto a photomask or reticle. In addition, even if foreign matter adheres to the pellicle, since these foreign matter do not form an image on the wafer coated with the photoresist, it is possible to prevent exposure patterns from being short-circuited or disconnected due to the image of the foreign matter. Yield can be improved.
近年、半導体装置等の高集積化に伴い、より狭い線幅で微細な回路パターンの描画が求められるようになり、フォトリソグラフィー工程で使用される露光光についてもKrFエキシマレーザー(波長248nm)、ArFエキシマレーザー(波長193nm)、F2エキシマレーザー(波長157nm)等のような短波長光が主になっている。これらの短波長の露光光源は高出力であって光のエネルギーが高いことから、支持枠を形成するアルミニウム材の表面の陽極酸化皮膜に硫酸やリン酸等の無機酸が残存すると、露光雰囲気中に存在するアンモニア等の塩基性物質と反応して硫酸アンモニウム等の反応生成物が生じ、この反応生成物(ヘイズ)がペリクルにくもりを生じさせてパターン転写像に影響を与える問題がある。 In recent years, with the high integration of semiconductor devices and the like, drawing of a fine circuit pattern with a narrower line width has been required, and KrF excimer laser (wavelength 248 nm), ArF is also used for exposure light used in the photolithography process. Short wavelength light such as excimer laser (wavelength 193 nm), F 2 excimer laser (wavelength 157 nm), etc. is mainly used. These short-wavelength exposure light sources have high output and high light energy, so if inorganic acid such as sulfuric acid or phosphoric acid remains on the anodized film on the surface of the aluminum material that forms the support frame, There is a problem in that a reaction product such as ammonium sulfate is produced by reacting with a basic substance such as ammonia present in the substrate, and this reaction product (haze) causes clouding on the pellicle and affects the pattern transfer image.
そこで、酒石酸を含んだアルカリ性水溶液を用いた陽極酸化処理によりアルミニウム材の表面に陽極酸化皮膜を形成してペリクル用の支持枠を得ることで、硫酸やリン酸等の無機酸の含有量を低減して、高エネルギーの光の照射下においてもヘイズの発生を可及的に防止する方法が提案されている(特許文献1参照)。 Therefore, the content of inorganic acids such as sulfuric acid and phosphoric acid is reduced by forming an anodized film on the surface of the aluminum material by anodizing using an alkaline aqueous solution containing tartaric acid to obtain a support frame for the pellicle. And the method of preventing generation | occurrence | production of a haze as much as possible also under irradiation of high energy light is proposed (refer patent document 1).
一方で、ペリクル用支持枠は、光源からの光の反射を防いで鮮明なパターン転写像を得るために、アルミニウム材を陽極酸化処理した後は黒色化する必要があり、例えば、陽極酸化皮膜のポアに有機染料等を浸透させて黒色にする方法が知られている。しかしながら、短波長の高いエネルギーの光が照射されると有機染料が化学変化して色調変化や退色を起すおそれがあることから、陽極酸化皮膜のポア中にNi、Co等を電解析出させて黒色化する方法が提案されている(特許文献2参照)。 On the other hand, the support frame for the pellicle needs to be blackened after anodizing the aluminum material in order to prevent reflection of light from the light source and obtain a clear pattern transfer image. A method is known in which an organic dye or the like is infiltrated into a pore to make it black. However, when irradiated with light having a short wavelength and high energy, the organic dye may chemically change and cause a change in color tone or fading. Therefore, Ni, Co, or the like is electrolytically deposited in the pores of the anodized film. A method of blackening has been proposed (see Patent Document 2).
前述したように、ペリクル用支持枠には光学的薄膜体が張着され、その状態を高い精度で保持することなどが求められることから、通常、JIS規定のA7075アルミニウム合金が使用される。ところが、JIS A7075のようなAl−Zn−Mg系アルミニウム合金を陽極酸化処理して、上記特許文献2に記載されるような電解析出処理をしても、十分な黒色化が図れないことが分った。 As described above, since an optical thin film body is stuck to the support frame for pellicle and the state thereof is required to be maintained with high accuracy, JIS A7075 aluminum alloy is usually used. However, even if an Al—Zn—Mg based aluminum alloy such as JIS A7075 is anodized and subjected to electrolytic deposition as described in Patent Document 2, sufficient blackening cannot be achieved. I understand.
そこで、本発明者等は、この問題を解決するために鋭意検討した結果、T6調質処理されたAl−Zn−Mg系アルミニウム合金を更に所定の条件で焼鈍することで、陽極酸化処理後の電解析出により十分に黒色化されたペリクル用支持枠が得られることを見出し、本発明を完成させた。 Thus, as a result of intensive studies to solve this problem, the present inventors have further annealed the Al—Zn—Mg based aluminum alloy that has been subjected to T6 tempering treatment under predetermined conditions, so The present inventors have found that a support frame for a pellicle that is sufficiently blackened by electrolytic deposition can be obtained.
したがって、本発明の目的は、十分な黒色化が図られて高エネルギー光の照射下においても耐光性に優れると共に、ヘイズの発生を可及的に抑えることができるペリクル用支持枠の製造方法を提供することにある。 Accordingly, an object of the present invention is to provide a method for manufacturing a support frame for a pellicle that is sufficiently blackened and has excellent light resistance even under irradiation with high energy light, and can suppress the occurrence of haze as much as possible. It is to provide.
また、本発明の別の目的は、上記特性を備えたペリクル用支持枠及びペリクルを提供することにある。 Another object of the present invention is to provide a pellicle support frame and pellicle having the above characteristics.
すなわち、本発明は、光学的薄膜体を備えてペリクルとして使用されるペリクル用支持枠の製造方法であって、Al−Zn−Mg系アルミニウム合金のT6調質材を100〜400℃の温度で焼鈍した後、クエン酸を含んだアルカリ性水溶液を用いて陽極酸化処理し、Ni、Co、Cu、Sn、Mn及びFeからなる群から選ばれた1種又は2種以上を電解析出処理により析出させて黒色化することを特徴とするペリクル用支持枠の製造方法である。 That is, the present invention relates to a method for manufacturing a support frame for a pellicle that is used as a pellicle with an optical thin film body, and a T6 tempered material of an Al—Zn—Mg based aluminum alloy at a temperature of 100 to 400 ° C. After annealing, it is anodized using an alkaline aqueous solution containing citric acid, and one or more selected from the group consisting of Ni, Co, Cu, Sn, Mn and Fe are deposited by electrolytic deposition treatment. The method for manufacturing a support frame for a pellicle is characterized in that the support frame for pellicle is blackened.
また、本発明は、上記の方法によって得られたペリクル用支持枠であって、L*値が40以下であり、かつ、80℃の純水に4時間浸漬させて溶出したイオン濃度を測定するイオン溶出試験において、支持枠表面積100cm2あたりの純水100ml中への溶出濃度が、酢酸イオン0.2ppm以下、ギ酸イオン0.06ppm以下、シュウ酸イオン0.01ppm以下、硫酸イオン0.01ppm以下、硝酸イオン0.02ppm以下、亜硝酸イオン0.02ppm以下、及び塩素イオン0.02ppm以下であることを特徴とするペリクル用支持枠である。 The present invention also relates to a support frame for a pellicle obtained by the above method, which has an L * value of 40 or less and is immersed in pure water at 80 ° C. for 4 hours to measure the ion concentration eluted. In the ion elution test, the elution concentration in 100 ml of pure water per 100 cm 2 of the support frame surface area is 0.2 ppm or less acetate ion, 0.06 ppm or less formate ion, 0.01 ppm or less oxalate ion, 0.01 ppm or less sulfate ion A support frame for a pellicle, characterized by having nitrate ions of 0.02 ppm or less, nitrite ions of 0.02 ppm or less, and chlorine ions of 0.02 ppm or less.
更に、本発明は、上記ペリクル用支持枠に光学的薄膜体を備えたペリクルである。 Furthermore, the present invention is a pellicle comprising an optical thin film body on the pellicle support frame.
本発明においては、Al−Zn−Mg系アルミニウム合金のT6調質材を用いるようにし、好ましくはAl−Zn−Mg−Cu系アルミニウム合金のT6調質材を用いるようにして、ペリクル用支持枠を得る。Al−Zn−Mg系アルミニウム合金はアルミニウム合金のなかでも最も強度を有するものであり、高寸法精度が実現されるほか、使用時の外力による変形や傷付きを防ぐことができるなど、ペリクル用支持枠を得る上では好適である。このアルミニウム合金について、残部のAl以外の化学成分としては、Zn5.1〜6.1質量%、Mg2.1〜2.9質量%、及びCu1.2〜2.0質量%であるのが好ましく、更にはCr、Ti、Bのほか、不純物としてFe、Si、Mn、V、Zr、その他の元素を含んでもよい。このような好適なアルミニウム合金の代表例としては、JIS規定のA7075が挙げられる。 In the present invention, a T6 tempered material of an Al—Zn—Mg-based aluminum alloy is used, and preferably a T6 tempered material of an Al—Zn—Mg—Cu-based aluminum alloy is used. Get. Al-Zn-Mg-based aluminum alloy has the strongest strength among aluminum alloys, and provides high dimensional accuracy and prevents deformation and scratches due to external force during use. It is suitable for obtaining a frame. Regarding this aluminum alloy, the chemical components other than the remaining Al are preferably 5.1 to 6.1% by mass of Zn, 2.1 to 2.9% by mass of Mg, and 1.2 to 2.0% by mass of Cu. Furthermore, in addition to Cr, Ti, and B, Fe, Si, Mn, V, Zr, and other elements may be included as impurities. A typical example of such a suitable aluminum alloy is JIS-defined A7075.
Al−Zn−Mg系アルミニウム合金のT6調質材を使用する理由は、時効析出によって強度が付与されたものであることなどが挙げられる。すなわち、従来、ペリクル用支持枠を製造する際には、所定の化学組成を有する鋳塊を押出や圧延加工等により枠状のアルミフレームに加工して溶体化処理を施した後、人工時効硬化処理によって合金元素を含む化合物を時効析出させて、強度を付与することが行われている。したがって、本発明においてもAl−Zn−Mg系アルミニウム合金のT6調質材を用いるようにする。なお、このT6調質材を得るための処理は、JIS H0001記載の調質条件に従えばよい。 The reason why the T6 tempered material of the Al—Zn—Mg based aluminum alloy is used is that strength is imparted by aging precipitation. That is, conventionally, when manufacturing a support frame for a pellicle, an ingot having a predetermined chemical composition is processed into a frame-like aluminum frame by extrusion or rolling, and subjected to a solution treatment, and then artificial age hardening is performed. A compound containing an alloy element is aged by treatment to impart strength. Accordingly, the T6 tempered material of Al—Zn—Mg aluminum alloy is also used in the present invention. In addition, the process for obtaining this T6 tempered material should just follow the tempering conditions of JISH0001.
そして、本発明においては、Al−Zn−Mg系アルミニウム合金のT6調質材を100〜400℃の温度、好ましくは250〜300℃の温度で焼鈍する。焼鈍の温度が100℃未満であると、その後の電解析出処理によっても十分に黒色化された支持枠を得ることができず、反対に焼鈍の温度が400℃を超えると、逆にL*値が高くなって白色化の方向に進む。また、焼鈍の時間については、30〜120分であるのが良く、黒色化を良好に進めることができると共に、白色化の進行を抑えることができる。 In the present invention, the T6 tempered material of the Al—Zn—Mg based aluminum alloy is annealed at a temperature of 100 to 400 ° C., preferably 250 to 300 ° C. If the annealing temperature is less than 100 ° C., a sufficiently blackened support frame cannot be obtained even by the subsequent electrolytic deposition treatment. Conversely, if the annealing temperature exceeds 400 ° C., L * The value increases and proceeds in the direction of whitening. Moreover, about the time of annealing, it is good that it is 30 to 120 minutes, and while being able to advance blackening favorably, progress of whitening can be suppressed.
焼鈍によって黒色化が図れる理由については定かではないが、T6調質処理で固溶していた合金元素がこの熱処理により再度析出し、MgZn2のような析出物が支持枠の黒色化に寄与するものと考える。この析出物は陽極酸化処理によって陽極酸化皮膜中に取り込まれ、一部は溶解してしまう物もあるが、析出物が多くなれば電解析出による着色効果を促進したり、析出物自体が光を吸収して黒色に見えるようになると推察される。一方、析出が少ないとこのような効果が十分得られずに、明るく見えるものと推察される。すなわち、焼鈍の温度が100℃未満であると合金元素の析出が十分でなく、反対に400℃を超えると、析出物が粗大化して上記のような陽極酸化皮膜での作用が認められ難くなり、また、高温になり過ぎるとT6調質材が軟化するおそれがある。 The reason why blackening can be achieved by annealing is not clear, but the alloy elements dissolved in the T6 refining treatment are precipitated again by this heat treatment, and precipitates such as MgZn 2 contribute to blackening of the support frame. Think of things. This precipitate is taken into the anodic oxide film by anodizing treatment, and some of it is dissolved. However, if the amount of the precipitate increases, the coloring effect by electrolytic deposition is promoted, or the precipitate itself is light. It is presumed that it will appear black after absorbing the water. On the other hand, when the amount of precipitation is small, it is assumed that such an effect cannot be obtained sufficiently and looks bright. That is, if the annealing temperature is less than 100 ° C., the precipitation of the alloy elements is not sufficient. Conversely, if the annealing temperature exceeds 400 ° C., the precipitate becomes coarse and it is difficult to recognize the effect on the anodic oxide film as described above. Moreover, if the temperature becomes too high, the T6 tempered material may be softened.
ここで、析出物のひとつであるMgZn2に着目すると、本発明において、X線回折法により測定したT6調質材におけるMgZn2の積分回折強度が40.0以上になるように焼鈍を行うのが好ましく、より好ましくはMgZn2の積分回折強度が90.0以上になるように焼鈍するのが良い。このようにT6調質材におけるMgZn2の積分回折強度が40.0以上になるように焼鈍することで、電界析出処理後のX線回折法により測定されるMgZn2の積分回折強度が19.5以上になり、好適に黒色化されたペリクル用支持枠を得ることができる。 Here, paying attention to MgZn 2 that is one of the precipitates, in the present invention, annealing is performed so that the integrated diffraction intensity of MgZn 2 in the T6 tempered material measured by the X-ray diffraction method becomes 40.0 or more. More preferably, annealing is preferably performed so that the integrated diffraction intensity of MgZn 2 is 90.0 or more. By annealing so that the integrated diffraction intensity of MgZn 2 in the T6 tempered material becomes 40.0 or more, the integrated diffraction intensity of MgZn 2 measured by the X-ray diffraction method after field deposition treatment is 19. A pellicle support frame that is 5 or more and is preferably blackened can be obtained.
T6調質材を焼鈍した後は陽極酸化処理して、その表面に陽極酸化皮膜を形成する。本発明では、ヘイズの最大原因物質である硫酸を用いずに、電解液としてクエン酸を含んだアルカリ性水溶液を用いるようにする。 After annealing the T6 tempered material, anodization is performed to form an anodized film on the surface. In the present invention, an alkaline aqueous solution containing citric acid is used as the electrolytic solution without using sulfuric acid which is the largest causative substance of haze.
ここで、クエン酸としては、クエン酸ナトリウム、クエン酸カリウム、クエン酸リチウム、クエン酸アンモニウム等のクエン酸塩を好適に用いることができる。クエン酸の濃度は20〜300g/Lであるのが良く、好ましくは50〜200g/Lであるのが良い。クエン酸の濃度が20g/Lより低いと陽極酸化皮膜は形成され難く、反対に300g/Lより高いと低温での陽極酸化の際にクエン酸塩が析出するおそれがある。また、クエン酸を含んだアルカリ水溶液のpHについては12.25〜13.5であるのが良く、好ましくは12.5〜13.0であるのが良い。pHが12.25より低いと皮膜の生成速度が遅く、支持枠を黒色化するのが困難となり、反対に13.5より高くなると皮膜の溶解速度が速くなり、粉吹き等が発生するおそれがある。 Here, citrates such as sodium citrate, potassium citrate, lithium citrate, and ammonium citrate can be suitably used as citric acid. The concentration of citric acid is preferably 20 to 300 g / L, and preferably 50 to 200 g / L. When the concentration of citric acid is lower than 20 g / L, an anodized film is hardly formed. On the other hand, when the concentration is higher than 300 g / L, citrate may be precipitated during anodization at a low temperature. Further, the pH of the alkaline aqueous solution containing citric acid is preferably 12.25 to 13.5, and more preferably 12.5 to 13.0. If the pH is lower than 12.25, the film formation rate is slow, making it difficult to blacken the support frame. Conversely, if the pH is higher than 13.5, the film dissolution rate is increased, and powder blowing may occur. is there.
クエン酸を含んだアルカリ水溶液を電解液として用いて陽極酸化処理する際は、浴温度を0〜15℃にするのが良く、好ましくは5〜10℃にするのが良い。浴温度が5℃より低くなると皮膜の生成速度が遅くなり効率的ではなく、反対に15℃より高くなると皮膜の溶解速度が速くなり成膜に時間を要し、また、粉吹き等が生じるおそれがある。陽極酸化処理の電圧は5〜100Vであるのが良く、好ましくは15〜70Vであるのが良い。電圧が5Vより低いと皮膜が弱くなるおそれがあり、反対に100Vより高くなるとポアの面積が少なくなり、黒色化が困難となる。更には、陽極酸化の処理時間は5〜40分であるのが良く、好ましくは7〜20分であるのが良い。 When an anodizing treatment is performed using an alkaline aqueous solution containing citric acid as an electrolytic solution, the bath temperature is preferably 0 to 15 ° C, and preferably 5 to 10 ° C. When the bath temperature is lower than 5 ° C, the film formation rate is slow and not efficient. On the other hand, when the bath temperature is higher than 15 ° C, the dissolution rate of the film is high, and it takes time for film formation, and there is a risk of powder blowing. There is. The anodizing voltage is preferably 5 to 100V, and more preferably 15 to 70V. If the voltage is lower than 5V, the film may be weakened. On the other hand, if the voltage is higher than 100V, the area of the pore is reduced, and blackening becomes difficult. Furthermore, the anodization treatment time is preferably 5 to 40 minutes, and preferably 7 to 20 minutes.
そして、クエン酸の濃度やアルカリ水溶液のpHを含めて、これらの陽極酸化処理条件のもと、好適には焼鈍後のT6調質材の表面に膜厚2〜9μmの陽極酸化皮膜を形成するのが良い。陽極酸化皮膜の膜厚が2μmより小さいと、その後の電解析出処理において十分に黒色化することができずに露光光を散乱させてしまうおそれがある。反対に9μmより大きいと、皮膜内に取り込まれる酸成分の量が多くなりすぎるおそれがある。なお、本発明では、クエン酸を含んだアルカリ性水溶液を用いることで、一般に硫酸等の無機酸を用いて陽極酸化皮膜を形成する場合(通常100〜200g/L程度)に比べて、使用する酸の量を減らしながら所定の陽極酸化皮膜を得ることができる。 An anodized film having a film thickness of 2 to 9 μm is preferably formed on the surface of the annealed T6 tempered material under these anodizing conditions including the concentration of citric acid and the pH of the alkaline aqueous solution. Is good. If the film thickness of the anodized film is smaller than 2 μm, it may not be sufficiently blackened in the subsequent electrolytic deposition treatment, and exposure light may be scattered. On the other hand, if it is larger than 9 μm, the amount of the acid component taken into the film may be excessive. In the present invention, by using an alkaline aqueous solution containing citric acid, the acid used is generally used as compared with the case where an anodized film is formed using an inorganic acid such as sulfuric acid (usually about 100 to 200 g / L). A predetermined anodic oxide film can be obtained while reducing the amount of.
陽極酸化皮膜を形成した後には、Ni、Co、Cu、Sn、Mn及びFeからなる群から選ばれた1種又は2種以上を電解析出処理(二次電解)により析出させて、支持枠を黒色に着色する。これらの金属は、金属塩や酸化物のほか、コロイド粒子として存在するものなどを使用することができるが、好ましくは、Ni塩、Co塩、Cu塩、Sn塩、Mn塩及びFe塩からなる群から選ばれた1種又は2種以上が添加された電解析出浴を用いるのが良い。より好適には、硫酸ニッケルとホウ酸を含んだ電解析出浴や、酢酸ニッケルとホウ酸を含んだ電解析出浴等が挙げられる。また、この電解析出浴には、溶出したアルミの析出防止やpHを調整する等の目的から酒石酸、酸化マグネシウム、酢酸等を含めることができる。 After forming the anodic oxide film, one or more selected from the group consisting of Ni, Co, Cu, Sn, Mn and Fe are deposited by electrolytic deposition treatment (secondary electrolysis), and the support frame Is colored black. These metals may be metal salts, oxides, or those present as colloidal particles, but preferably include Ni salts, Co salts, Cu salts, Sn salts, Mn salts, and Fe salts. It is preferable to use an electrolytic deposition bath to which one or more selected from the group is added. More preferable examples include an electrolytic deposition bath containing nickel sulfate and boric acid, an electrolytic deposition bath containing nickel acetate and boric acid, and the like. The electrolytic deposition bath may contain tartaric acid, magnesium oxide, acetic acid and the like for the purpose of preventing precipitation of eluted aluminum and adjusting pH.
また、電解析出処理は、浴温度15〜40℃、電圧10〜30V、時間1〜20分程度の条件によれば、陽極酸化皮膜を黒色に着色することができる。また、この電解析出処理では直流電源又は交流電源によって電圧を印加することができ、開始時に予備電解を実施するようにしてもよい。 Further, the electrolytic deposition treatment can color the anodized film black according to the conditions of a bath temperature of 15 to 40 ° C., a voltage of 10 to 30 V, and a time of about 1 to 20 minutes. In this electrolytic deposition treatment, a voltage can be applied by a DC power supply or an AC power supply, and preliminary electrolysis may be performed at the start.
電解析出処理により陽極酸化皮膜を黒色化した後には、封孔処理を行うようにするのが良い。封孔処理の条件については特に制限されず、水蒸気や封孔浴を用いるような公知の方法を採用することができるが、なかでも、不純物の混入のおそれを排除しながら、酸成分の封じ込めを行う観点から、水蒸気による封孔処理が望ましい。水蒸気による封孔処理の条件については、例えば、温度105〜130℃、相対湿度90〜100%(R.H.)、圧力0.4〜2.0kg/cm2Gの設定で12〜60分処理するのがよい。なお、封孔処理後は、例えば純水を用いて洗浄するのが望ましい。 After blackening the anodized film by electrolytic deposition, it is preferable to perform sealing treatment. The conditions for the sealing treatment are not particularly limited, and a known method such as using water vapor or a sealing bath can be adopted. In particular, it is possible to contain acid components while eliminating the possibility of contamination with impurities. From the viewpoint of performing, sealing treatment with water vapor is desirable. Regarding the conditions for the sealing treatment with water vapor, for example, the treatment is performed for 12 to 60 minutes at a temperature of 105 to 130 ° C., a relative humidity of 90 to 100% (RH), and a pressure of 0.4 to 2.0 kg / cm 2 G. Is good. In addition, after the sealing treatment, it is desirable to clean using, for example, pure water.
また、本発明においては、陽極酸化処理に先駆けて、Al−Zn−Mg系アルミニウム合金のT6調質材の表面をブラスト加工等による機械的手段や、エッチング液を用いる化学的手段によって粗面化処理を行っても良い。このような粗面化処理を事前に施して陽極酸化処理と電解析出処理を行うことで、支持枠は艶消しされたような低反射性の黒色になる。 In the present invention, prior to the anodizing treatment, the surface of the Al-Zn-Mg aluminum alloy T6 tempered material is roughened by mechanical means such as blasting or chemical means using an etching solution. Processing may be performed. By performing such roughening treatment in advance and performing anodizing treatment and electrolytic deposition treatment, the support frame becomes a low-reflective black that has been matted.
本発明によって得られたペリクル用支持枠は、Al−Zn−Mg系アルミニウム合金のT6調質材を焼鈍する効果と相まって十分な黒色化が図られ、優れた耐光性を有する。好適にはL*値が40以下、より好適にはL*値が35以下のペリクル用支持枠が得られる。また、同時に、本発明によって得られたペリクル用支持枠は、80℃の純水に4時間浸漬させて溶出したイオン濃度を測定するイオン溶出試験において、以下のような特性を示すことができる。 The support frame for a pellicle obtained by the present invention is sufficiently blackened in combination with the effect of annealing the T6 tempered material of an Al—Zn—Mg aluminum alloy, and has excellent light resistance. A pellicle support frame having an L * value of 40 or less, more preferably an L * value of 35 or less is obtained. At the same time, the pellicle support frame obtained by the present invention can exhibit the following characteristics in an ion elution test in which the ion concentration is measured by immersing in pure water at 80 ° C. for 4 hours.
すなわち、支持枠表面積100cm2あたりの純水100ml中への溶出濃度で、酢酸イオン(CH3COO-)が0.2ppm以下、好ましくは0.1ppm以下であり、ギ酸イオン(HCOO-)が0.06ppm以下、好ましくは0.03ppm以下であり、シュウ酸イオン(C2O4 2-)が0.01ppm以下、好ましくは0.005ppm未満(定量限界)であり、硫酸イオン(SO4 2-)が0.01ppm以下、好ましくは0.005ppm未満(定量限界)であり、硝酸イオン(NO3 -)が0.02ppm以下、好ましくは0.01ppm以下であり、亜硝酸イオン(NO2 -)が0.02ppm以下、好ましくは0.01ppm以下であり、塩酸イオン(Cl-)が0.02ppm以下、好ましくは0.01ppm以下である。これらはヘイズの発生に影響を考えるイオンであり、なかでも、酢酸イオン、ギ酸イオン、硫酸イオン、シュウ酸、及び亜硝酸の溶出量を制御することで、ヘイズの発生を可及的に低減したペリクル用支持枠とすることができる。なお、溶出イオンの検出はイオンクロマトグラフ分析により行うことができ、詳細な測定条件については実施例に記載するとおりである。 That is, at an elution concentration in 100 ml of pure water per 100 cm 2 of the support frame surface area, acetate ion (CH 3 COO − ) is 0.2 ppm or less, preferably 0.1 ppm or less, and formate ion (HCOO − ) is 0. 0.06 ppm or less, preferably 0.03 ppm or less, oxalate ion (C 2 O 4 2− ) is 0.01 ppm or less, preferably less than 0.005 ppm (quantitative limit), and sulfate ion (SO 4 2− ) Is 0.01 ppm or less, preferably less than 0.005 ppm (quantitative limit), nitrate ion (NO 3 − ) is 0.02 ppm or less, preferably 0.01 ppm or less, and nitrite ion (NO 2 − ). Is 0.02 ppm or less, preferably 0.01 ppm or less, and hydrochloric acid ion (Cl − ) is 0.02 ppm or less, preferably 0.01 ppm or less. These ions are considered to affect the generation of haze, and the haze generation was reduced as much as possible by controlling the elution amount of acetate ion, formate ion, sulfate ion, oxalic acid, and nitrous acid. A pellicle support frame can be obtained. The detection of eluted ions can be performed by ion chromatographic analysis, and detailed measurement conditions are as described in the examples.
また、本発明によって得られたペリクル用支持枠は、その片側に光学的薄膜体を貼着することでペリクルとして使用することができる。光学的薄膜体としては特に制限はなく公知のものを使用することができるが、例えば石英等の無機物質や、ニトロセルロース、ポリエチレンテレフタレート、セルロースエステル類、ポリカーボネート、ポリメタクリル酸メチル等のポリマーなどを例示することができる。また、光学的薄膜体には、CaF2等の無機物やポリスチレン、テフロン(登録商標)等のポリマーからなる反射防止層などを備えるようにしてもよい。 The pellicle support frame obtained by the present invention can be used as a pellicle by attaching an optical thin film on one side thereof. There are no particular restrictions on the optical thin film body, and known materials can be used. For example, inorganic materials such as quartz, polymers such as nitrocellulose, polyethylene terephthalate, cellulose esters, polycarbonate, and polymethyl methacrylate are used. It can be illustrated. Further, the optical thin film body may be provided with an antireflection layer made of an inorganic material such as CaF 2 or a polymer such as polystyrene or Teflon (registered trademark).
一方、光学的薄膜体を設けた面とは反対側の支持枠端面には、ペリクルをフォトマスクやレティクルに装着するための粘着体を備えるようにする。粘着体としては粘着材単独あるいは弾性のある基材の両側に粘着材が塗布された素材を使用することができる。ここで、粘着材としてはアクリル系、ゴム系、ビニル系、エポキシ系、シリコーン系等の接着剤が挙げることができ、また、基材となる弾性の大きい材料としてはゴムまたはフォームが挙げられ、例えばブチルゴム、発砲ポリウレタン、発砲ポリエチレン等を例示できるが、特にこれらに限定されない。 On the other hand, the support frame end surface opposite to the surface on which the optical thin film body is provided is provided with an adhesive body for mounting the pellicle to the photomask or reticle. As the adhesive body, an adhesive material alone or a material in which an adhesive material is applied on both sides of an elastic substrate can be used. Here, examples of the adhesive material include acrylic, rubber-based, vinyl-based, epoxy-based, and silicone-based adhesives, and examples of the highly elastic material serving as a base material include rubber or foam. For example, butyl rubber, foamed polyurethane, foamed polyethylene and the like can be exemplified, but not limited thereto.
本発明によれば、十分な黒色化が図られると共に、酸成分の含有量が少ないペリクル用支持枠を得ることができるため、高エネルギー光の照射下においても耐光性に優れ、かつ、ヘイズの発生を可及的に抑えることができる。また、本発明によって得られたペリクル用支持枠は高い寸法精度を有し、傷が付きにくく耐久性に優れ、かつ、発塵のおそれも少ない。そのため、ペリクルとして使用した場合、KrFエキシマレーザー、ArFエキシマレーザー、F2エキシマレーザー等のような高エネルギーの露光によるフォトリソグラフィーに好適であり、長期に亘って信頼性良く使用することができる。 According to the present invention, it is possible to obtain a support frame for a pellicle that is sufficiently blackened and has a low acid component content, so that it has excellent light resistance even under irradiation with high energy light, and has a high haze. Generation can be suppressed as much as possible. Moreover, the pellicle support frame obtained by the present invention has high dimensional accuracy, is hardly scratched, has excellent durability, and has a low risk of dust generation. Therefore, when used as a pellicle, it is suitable for photolithography by high energy exposure such as KrF excimer laser, ArF excimer laser, F 2 excimer laser, etc., and can be used reliably over a long period of time.
以下、実施例及び比較例に基づき、本発明の好適な実施の形態を説明する。 Hereinafter, preferred embodiments of the present invention will be described based on examples and comparative examples.
[焼鈍による黒色化の確認実験]
焼鈍による黒色化の効果を確認するために、JIS H0001に示された調質記号T6で処理したJIS A7075アルミニウム合金(JIS A7075−T6)の中空押出し材を表1に示した温度と時間で熱処理したものについて、それぞれ陽極酸化処理及び電解析出処理を行って実験用の表面処理アルミ合金材を得て、L*値を測定した。
[Confirmation experiment of blackening by annealing]
In order to confirm the effect of blackening by annealing, a hollow extruded material of JIS A7075 aluminum alloy (JIS A7075-T6) treated with tempering symbol T6 shown in JIS H0001 was heat-treated at the temperature and time shown in Table 1. The obtained samples were subjected to anodizing treatment and electrolytic deposition treatment to obtain an experimental surface-treated aluminum alloy material, and the L * value was measured.
なお、この実験では上記JIS A7075−T6の中空押出し材を表1の条件によりそれぞれ大気中で熱処理した後、表面の状態を同じにするために各試料をエメリー♯600で研磨した。次いで、クエン酸ナトリウム2水和物(Na3(C6H5O7)・2H2O)50g/L、及び水酸化ナトリウム4g/Lが溶解したアルカリ性水溶液(pH=12.9)を電解液として、浴温度5℃、電解電圧70V、電気量7C/cm2の条件で陽極酸化処理した。更に、酢酸ニッケル(II)四水和物((CH3COO)2Ni・4H2O)100g/L、ホウ酸30g/L、酒石酸3g/L、及び酸化マグネシウム1g/Lが溶解した電解析出浴(pH=5.4)を使って、浴温度30℃、交流電圧13Vの定電圧電解を6分行って電解析出処理した。その後、相対湿度100%(R.H.)2.0kg/cm2G、及び温度、130℃の水蒸気を発生させながら30分の封孔処理した上で、ハンターの色差式による明度指数L*値を測定した。結果を表1に示す。 In this experiment, the hollow extruded material of JIS A7075-T6 was heat-treated in the air under the conditions shown in Table 1, and then each sample was polished with emery # 600 in order to make the surface state the same. Subsequently, an alkaline aqueous solution (pH = 12.9) in which 50 g / L of sodium citrate dihydrate (Na 3 (C 6 H 5 O 7 ) · 2H 2 O) and 4 g / L of sodium hydroxide are dissolved is electrolyzed. The solution was anodized under conditions of a bath temperature of 5 ° C., an electrolysis voltage of 70 V, and an amount of electricity of 7 C / cm 2 . Furthermore, electroanalysis in which nickel (II) acetate tetrahydrate ((CH 3 COO) 2 Ni · 4H 2 O) 100 g / L, boric acid 30 g / L, tartaric acid 3 g / L, and magnesium oxide 1 g / L were dissolved. Using a bath (pH = 5.4), constant voltage electrolysis at a bath temperature of 30 ° C. and an AC voltage of 13 V was performed for 6 minutes for electrolytic deposition treatment. Then, after performing sealing treatment for 30 minutes while generating steam at a relative humidity of 100% (RH) of 2.0 kg / cm 2 G, temperature and 130 ° C, the brightness index L * value by Hunter's color difference formula is measured. did. The results are shown in Table 1.
上記結果から分るように、100℃〜400℃の熱処理によりいずれもL*値が未処理の場合より下がる(黒色化する)ことが確認された。なかでも200℃〜400℃の熱処理では未処理の場合と比べてL*値が良好に下っており、特に、250℃×60分、250℃×120分、300℃×30分、及び300℃×60分の場合は黒色化が顕著に図れることが分った。 As can be seen from the above results, it was confirmed that the heat treatment at 100 ° C. to 400 ° C. lowered (blackened) the L * value compared to the case of no treatment. In particular, the heat treatment at 200 ° C. to 400 ° C. has a lower L * value compared to the case of no treatment, and in particular, 250 ° C. × 60 minutes, 250 ° C. × 120 minutes, 300 ° C. × 30 minutes, and 300 ° C. In the case of x 60 minutes, it turned out that blackening can be remarkable.
また、上記の実験用表面処理アルミ合金材の焼鈍によるMgZn2の析出の状態を調べるために、JIS A7075−T6の中空押出し材を熱処理した後(陽極酸化処理と電解析出処理を行わない表面処理前の状態)、X線回折法によりMgZn2のピーク(回折角度2θ=19.7°)について積分回折強度を求めた。また、陽極酸化処理と電解析出処理を施した表面処理後のMgZn2の析出の状態を確認するために、同様にX線回折法によりMgZn2のピーク(回折角度2θ=19.7°)について積分回折強度を求めた。得られた積分回折強度と、その中空押出し材を陽極酸化処理及び電解析出処理した実験用表面処理アルミ合金材のL*値の関係についてまとめたものを表2に示す。なお、X線回折には、株式会社リガク製X線回折装置RAD−rRを使用し、Bragg−Brentano光学系、集中法で行った。ゴニオメーター半径は185mm、測定の種類は2θ/θ、管球はCuのKα、波長は1.54056Å、モノクロメーター使用し、管電圧は50kV、管電流は200mA、走査範囲は2θ=10°〜70°、軸送り速度は1.0°/min、データサンプル幅は0.010°、試料の内面回転は80回/min、スリットは発散スリット1°、散乱スリット1°、受光スリット0.3mm、モノクロ受光スリット0.3mmの各条件とし、シンチレーション検出器を用いて測定した。 In addition, in order to investigate the state of precipitation of MgZn 2 by annealing of the above experimental surface-treated aluminum alloy material, after heat-treating the hollow extruded material of JIS A7075-T6 (surface without anodizing treatment and electrolytic deposition treatment) The state before the treatment) and the integrated diffraction intensity of the MgZn 2 peak (diffraction angle 2θ = 19.7 °) were determined by the X-ray diffraction method. In addition, in order to confirm the state of precipitation of MgZn 2 after the surface treatment subjected to anodizing treatment and electrolytic deposition treatment, the peak of MgZn 2 (diffraction angle 2θ = 19.7 °) is similarly measured by X-ray diffraction. The integrated diffraction intensity was determined for. Table 2 shows a summary of the relationship between the obtained integrated diffraction intensity and the L * value of the experimental surface-treated aluminum alloy material obtained by subjecting the hollow extruded material to anodizing treatment and electrolytic deposition treatment. The X-ray diffraction was performed using a Ragaku X-ray diffractometer RAD-rR with a Bragg-Brentano optical system and a concentration method. Goniometer radius is 185mm, measurement type is 2θ / θ, tube is Kα of Cu, wavelength is 1.54056mm, monochromator is used, tube voltage is 50kV, tube current is 200mA, scanning range is 2θ = 10 ° ~ 70 °, axial feed rate is 1.0 ° / min, data sample width is 0.010 °, inner surface rotation of sample is 80 times / min, slit is diverging slit 1 °, scattering slit 1 °, light receiving slit 0.3 mm The measurement was performed using a scintillation detector under the conditions of a monochrome light receiving slit of 0.3 mm.
[実施例1]
上記JIS A7075−T6の中空押出し材を切断して、支持枠外寸法149mm×122mm×高さ5.8mm、支持枠厚さ2mmとなるように切削研磨し、枠材形状に加工してアルミフレームを用意した。これを大気中で熱処理温度250℃、熱処理時間120分の焼鈍を行った。次に、平均直径約100μmのステンレスを用いて焼鈍後のアルミフレームの表面をショットブラスト処理して、クエン酸ナトリウム2水和物(Na3(C6H5O7)・2H2O)50g/L、及び水酸化ナトリウム4g/Lが溶解したアルカリ性水溶液(pH=12.9)を電解液として、浴温度5℃、電解電圧70V、及び電気量7C/cm2の条件でアルミフレームを陽極酸化処理した。純水にて洗浄した後、アルミフレームの表面に形成された陽極酸化皮膜を渦電流式膜厚計(株式会社フィッシャー・インストルメンツ社製)にて確認したところ、膜厚は3.5μmであった。
[Example 1]
The hollow extruded material of JIS A7075-T6 is cut and polished so that the outer dimensions of the support frame are 149 mm × 122 mm × height 5.8 mm and the support frame thickness is 2 mm, and processed into a frame material shape to form an aluminum frame. Prepared. This was annealed in the atmosphere at a heat treatment temperature of 250 ° C. and a heat treatment time of 120 minutes. Next, the surface of the annealed aluminum frame is shot blasted using stainless steel having an average diameter of about 100 μm, and sodium citrate dihydrate (Na 3 (C 6 H 5 O 7 ) · 2H 2 O) 50 g An aluminum frame is used as an anode under the conditions of an alkaline aqueous solution (pH = 12.9) in which 4 g / L of sodium hydroxide is dissolved as an electrolyte, under conditions of a bath temperature of 5 ° C., an electrolysis voltage of 70 V, and an electric charge of 7 C / cm 2. Oxidized. After washing with pure water, the anodic oxide film formed on the surface of the aluminum frame was confirmed with an eddy current film thickness meter (Fischer Instruments Co., Ltd.). The film thickness was 3.5 μm. It was.
次いで、陽極酸化処理したアルミフレームを、酢酸ニッケル(II)四水和物((CH3COO)2Ni・4H2O)100g/L、ホウ酸30g/L、酒石酸3g/L、及び酸化マグネシウム1g/Lが溶解した電解析出浴(pH=5.4)を使って、浴温度30℃、直流電圧13Vの定電圧電解を6分行い、電解析出処理(二次電解)してアルミフレームを着色した。電解析出後、アルミフレームを蒸気封孔装置に入れ、相対湿度100%(R.H.)、2.0kg/cm2G、及び温度130℃の水蒸気を発生させながら30分の封孔処理を行い、実施例1に係るペリクル用支持枠を得た。この実施例1で採用した条件の一部を表3にまとめて示す。 Next, the anodized aluminum frame was added to nickel acetate (II) tetrahydrate ((CH 3 COO) 2 Ni · 4H 2 O) 100 g / L, boric acid 30 g / L, tartaric acid 3 g / L, and magnesium oxide. Using an electrolytic deposition bath (pH = 5.4) in which 1 g / L is dissolved, constant voltage electrolysis at a bath temperature of 30 ° C. and a DC voltage of 13 V is performed for 6 minutes, and electrolytic deposition treatment (secondary electrolysis) is performed to obtain aluminum. Colored frame. After electrolytic deposition, the aluminum frame is put into a steam sealing device, and sealing is performed for 30 minutes while generating water vapor at a relative humidity of 100% (RH), 2.0 kg / cm 2 G, and a temperature of 130 ° C., A pellicle support frame according to Example 1 was obtained. Table 3 summarizes some of the conditions employed in Example 1.
上記で得られたペリクル用支持枠について、ハンターの色差式による明度指数L*値を測定した。また、ペリクル用支持枠をポリエチレン袋に入れて純水100mlを加えて密封し、80℃に保って4時間浸漬させた。このようにして支持枠からの溶出成分を抽出した抽出水を、セル温度35℃、カラム(IonPacAS11-HC)温度40℃とし、1.5ml/minの条件でイオンクロマトグラフ分析装置(日本ダイオネクス社製ICS-2000)を用いて分析した。この抽出水から酢酸イオン、ギ酸イオン、塩酸イオン、亜硝酸イオン、硝酸イオン、硫酸イオン及びシュウ酸イオンを検出し、支持枠表面積100cm2あたりの純水100ml中への溶出濃度を求めた。これらの結果を表4に示す。なお、実施例で使用したイオンクロマトグラフ分析装置の定量限界(下限)は0.005ppmであり、表4に示した分析結果は、硫酸イオン及びシュウ酸イオンはいずれも検出されなかったことを表す。 The pellicle support frame obtained above was measured for the brightness index L * value according to Hunter's color difference formula. The pellicle support frame was put in a polyethylene bag, sealed with 100 ml of pure water, and kept at 80 ° C. for 4 hours. The extracted water from which the components eluted from the support frame were extracted in this manner was set to a cell temperature of 35 ° C. and a column (IonPacAS11-HC) temperature of 40 ° C., and an ion chromatograph analyzer (Nippon Dionex Co., Ltd.) at 1.5 ml / min. Analysis was performed using ICS-2000). From this extracted water, acetate ion, formate ion, hydrochloric acid ion, nitrite ion, nitrate ion, sulfate ion and oxalate ion were detected, and the elution concentration in 100 ml of pure water per 100 cm 2 of the support frame surface area was determined. These results are shown in Table 4. The quantitative limit (lower limit) of the ion chromatograph analyzer used in the examples is 0.005 ppm, and the analysis results shown in Table 4 indicate that neither sulfate ions nor oxalate ions were detected. .
[実施例2]
実施例1と同様に電解着色まで処理した後、水蒸気封孔にかわり、花見化学社製シーリングXを40ml/L含有する溶液に電解着色後のアルミフレームを入れ、90℃で20分間封孔処理を行ない、その後純水で水洗して実施例2に係るペリクル用支持枠を得た。実施例2のペリクル用支持枠のL*値、及び抽出結果を表4に示す。
[Example 2]
After processing up to electrolytic coloring as in Example 1, instead of water vapor sealing, the aluminum frame after electrolytic coloring was put into a solution containing 40 ml / L of Hanami Chemical Co., Ltd. Sealing X and sealed at 90 ° C. for 20 minutes. Thereafter, the pellicle support frame according to Example 2 was obtained by washing with pure water. Table 4 shows L * values of the pellicle support frame of Example 2 and extraction results.
[実施例3]
A7075−T6材を350℃で30分熱処理した以外は実施例1と同様にして、実施例3に係るペリクル用支持枠を得た。得られたペリクル用支持枠のL*値、及び抽出結果を表4に示す。
[Example 3]
A pellicle support frame according to Example 3 was obtained in the same manner as in Example 1 except that the A7075-T6 material was heat-treated at 350 ° C. for 30 minutes. Table 4 shows the L * value of the obtained pellicle support frame and the extraction results.
[比較例1]
A7075−T6材を用いて焼鈍を行わなかった以外は実施例1と同様にして、比較例1に係るペリクル用支持枠を得た。得られたペリクル用支持枠のL*値、及び抽出結果を表4に示す。
[Comparative Example 1]
A support frame for a pellicle according to Comparative Example 1 was obtained in the same manner as in Example 1 except that annealing was not performed using A7075-T6 material. Table 4 shows the L * value of the obtained pellicle support frame and the extraction results.
[比較例2]
焼鈍せずに、かつ、A7075−T6材を20℃、15質量%の硫酸の電解浴を用いて20Vで10C/cm2の陽極酸化を行った以外は実施例2と同様にして、比較例2に係るペリクル用支持枠を得た。得られたペリクル用支持枠のL*値、及び抽出結果を表4に示す。
[Comparative Example 2]
Comparative Example as in Example 2 except that the A7075-T6 material was anodized at 20 V and 10 C / cm 2 at 20 V without annealing and using an A7075-T6 sulfuric acid electrolytic bath. A support frame for a pellicle according to No. 2 was obtained. Table 4 shows the L * value of the obtained pellicle support frame and the extraction results.
本発明によって得られたペリクル用支持枠及びペリクルは、種々の半導体装置や液晶表示装置等の製造におけるフォトリソグラフィー工程等で使用することができ、特に高エネルギーの露光環境下においてより一層その効果を発揮する。 The pellicle support frame and pellicle obtained by the present invention can be used in a photolithography process or the like in the manufacture of various semiconductor devices, liquid crystal display devices, etc., and in particular, even in a high energy exposure environment. Demonstrate.
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WO2015059783A1 (en) | 2013-10-23 | 2015-04-30 | 日本軽金属株式会社 | Pellicle frame and process for producing same |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010113350A (en) * | 2008-10-10 | 2010-05-20 | Asahi Kasei E-Materials Corp | Support frame for pellicle, method of manufacturing the same, pellicle, and method of manufacturing surface treated aluminum material |
JP5666388B2 (en) * | 2011-05-20 | 2015-02-12 | 日本軽金属株式会社 | Manufacturing method of support frame for pellicle, support frame for pellicle, and pellicle |
-
2012
- 2012-05-18 JP JP2012114417A patent/JP5864359B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010113350A (en) * | 2008-10-10 | 2010-05-20 | Asahi Kasei E-Materials Corp | Support frame for pellicle, method of manufacturing the same, pellicle, and method of manufacturing surface treated aluminum material |
JP5666388B2 (en) * | 2011-05-20 | 2015-02-12 | 日本軽金属株式会社 | Manufacturing method of support frame for pellicle, support frame for pellicle, and pellicle |
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