JP2013004623A - Liquid processing apparatus and liquid processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce an entire projection area of a plurality of nozzles provided at nozzle support arms.SOLUTION: A liquid processing apparatus includes: a substrate holding part holding a substrate (W); a plurality of nozzles (82a, 82a') supplying a fluid to the substrate held by the substrate holding part; nozzle support arms (82) respectively supporting the plurality of nozzles; and a rotation mechanism (86A) rotating each nozzle support arm around the longitudinal axis line of the nozzle support arm. Discharge ports (82a1, 82a') of the plurality of nozzles are disposed at different circumferential positions around the longitudinal axis line of the nozzle support arm and are provided so that one of the discharge ports of the plurality of nozzles faces the substrate held by the substrate holding part depending on the rotation phase of the nozzle support arm.

Description

  The present invention relates to a liquid processing apparatus and a liquid processing method for performing liquid processing such as substrate cleaning processing, etching processing, plating processing, development processing, and coating processing by supplying processing liquid to a substrate.

Conventionally, a substrate cleaning process, an etching process, or a plating process is performed by supplying a processing liquid to the front and back surfaces of the substrate while rotating the substrate such as a semiconductor wafer (hereinafter also referred to as a wafer) in a horizontal state while rotating the substrate. Various types of liquid processing apparatuses that perform liquid processing such as development processing and coating processing are known (see, for example, Patent Document 1). Patent Document 1 discloses a single-wafer type that processes substrates one by one such that a substrate is horizontally held by a spin chuck and rotated, and a processing liquid is supplied to the surface of the substrate held and rotated by the spin chuck. A liquid processing apparatus is disclosed. In such a single wafer type liquid processing apparatus, an FFU (fan filter unit) is provided above the processing chamber, and a gas such as N ₂ gas (nitrogen gas) or clean air is flowed down from the FFU in the processing chamber. Technology to send to is known.

  A configuration of a liquid processing apparatus in which an FFU is provided above the processing chamber will be described with reference to FIGS. 14 and 15. FIG. 14 is a side view showing a schematic configuration of a conventional liquid processing apparatus, and FIG. 15 is a top view of the conventional liquid processing apparatus shown in FIG. The conventional liquid processing apparatus 200 includes a processing chamber (chamber) 210 in which a wafer W is accommodated and liquid processing of the accommodated wafer W is performed. A holding unit 220 for holding and rotating the wafer W is provided in the processing chamber 210, and a cup 230 is disposed around the holding unit 220. Further, in the conventional liquid processing apparatus 200, a plurality of nozzles 240 for supplying a processing liquid to the wafer W held by the holding unit 220 from above the cup 230 and one nozzle supporting the plurality of nozzles 240 are provided. An arm 241 is provided in the processing chamber 210. Further, the arm 241 is provided with an arm support portion 242 extending in a substantially vertical direction, and the arm 241 is supported by the arm support portion 242. The arm support portion 242 can be driven to rotate in both forward and reverse directions by a drive mechanism (not shown). As a result, the arm 241 can rotate in both forward and reverse directions around the arm support portion 242, and the arm 241 is an advanced position for supplying the processing liquid to the wafer W held by the holding portion 220 (see the solid line in FIG. 15). ) And the retracted position retracted from the cup 230 (see the two-dot chain line in FIG. 15), the arm support portion 242 is rotated (see the arrow in FIG. 15). In some cases, a plurality of, for example, two arms as described above are provided in one liquid processing apparatus, and a plurality of nozzles are supported on each arm.

Further, as shown in FIG. 14, an FFU (fan filter unit) 250 is provided above the processing chamber 210, and gases such as N ₂ gas (nitrogen gas) and clean air always flow down from the FFU 250. It is sent into the processing chamber 210. An exhaust unit 260 is provided at the bottom of the processing chamber 210, and the exhaust of the atmosphere in the processing chamber 210 is performed by the exhaust unit 260. As described above, a gas such as clean air is sent from the FFU 250 into the processing chamber 210 in a down flow, and the gas in the processing chamber 210 is replaced by exhausting the gas by the exhaust unit 260. ing.

  When a plurality of nozzles 240 are provided on one arm 241, the tip end of the arm is enlarged as indicated by a broken line 243 in FIG. 15, and the upward projection area is increased. The larger the projected area, the greater the impact on the downflow from the FFU described above.

JP 2009-94525 A

  The present invention provides a configuration capable of reducing the overall projected area of a nozzle even when a plurality of nozzles are provided on one nozzle support arm.

  The present invention includes a substrate holding unit that holds a substrate, a plurality of nozzles that supply fluid to the substrate held by the substrate holding unit, a nozzle support arm that supports the plurality of nozzles, and the nozzle support arm. A rotation mechanism that rotates around the longitudinal axis of the nozzle support arm, and the discharge ports of the plurality of nozzles are arranged at different circumferential positions around the longitudinal axis, and the rotational phase of the nozzle support arm Accordingly, there is provided a liquid processing apparatus in which any one of the plurality of nozzles is provided so as to face a substrate held by the substrate holding unit.

  According to this, the projected area of the entire nozzle can be reduced.

  Preferably, the discharge ports of the plurality of nozzles are provided at the same axial position with respect to the longitudinal axis.

  According to this, the trouble of teaching the drive mechanism of the nozzle support arm can be saved.

  The present invention is also a liquid processing method for liquid processing a substrate using a liquid processing apparatus having a nozzle support arm that supports at least a first nozzle and a second nozzle, wherein the first nozzle is attached to the substrate. Supplying the first processing liquid from the first nozzle to the substrate in a state of being directed, and rotating the nozzle support arm to direct the second nozzle toward the substrate, and in this state from the second nozzle And a step of supplying a second treatment liquid to the substrate.

  Preferably, the rotation of the nozzle support arm is performed without moving the nozzle support arm.

  According to the present invention, even when a plurality of nozzles are provided on one nozzle support arm, the entire projected area of the nozzles can be reduced.

It is the top view which looked at the liquid processing system containing the liquid processing apparatus by embodiment of this invention from upper direction. It is a top view which shows schematic structure of the liquid processing apparatus by embodiment of this invention. It is a side view of the liquid processing apparatus shown in FIG. It is a longitudinal cross-sectional view which shows the detail of a structure of the liquid processing apparatus shown in FIG. 2, Comprising: It is a figure which shows a state when a cup outer periphery cylinder exists in a downward position. It is a longitudinal cross-sectional view which shows the detail of a structure of the liquid processing apparatus shown in FIG. 2, Comprising: It is a figure which shows a state when a cup outer periphery cylinder exists in an upper position. It is a perspective view which shows the structure of the cup outer periphery cylinder in the liquid processing apparatus shown in FIG. It is a perspective view which shows the process chamber and six nozzle support arms in the liquid processing apparatus shown in FIG. FIG. 8 is an enlarged perspective view of the nozzle support arm shown in FIG. 7. It is a figure which shows a structure when each nozzle support arm shown in FIG. 7 etc. is seen toward the process chamber from the back of these nozzle support arms. It is a sectional side view which shows the detail of a structure of the nozzle support arm shown in FIG. It is a sectional side view which shows another structural example of a nozzle support arm. It is the rear view which looked at spiral piping from the axial direction back of the nozzle support arm shown in FIG. It is a schematic sectional side view which shows the example which incorporated the nozzle support arm shown in FIG. 11 in the liquid processing apparatus so that rotation was possible. It is a side view which shows the schematic structure of the conventional liquid processing apparatus. It is a top view of the conventional liquid processing apparatus shown in FIG.

  Hereinafter, embodiments will be described with reference to the drawings. First, a liquid processing system including a liquid processing apparatus will be described with reference to FIG. As shown in FIG. 1, a liquid processing system includes a mounting table 101 for mounting a carrier containing a substrate W (hereinafter also referred to as a wafer W) such as a semiconductor wafer as a substrate to be processed, and a carrier. A transfer arm 102 for taking out the accommodated wafer W, a shelf unit 103 for placing the wafer W taken out by the transfer arm 102, a wafer W placed on the shelf unit 103 are received, and the wafer W And a transport arm 104 for transporting the liquid into the liquid processing apparatus 10. As shown in FIG. 1, the liquid processing system is provided with a plurality (four in the embodiment shown in FIG. 1) of liquid processing apparatuses 10.

  Next, a schematic configuration of the liquid processing apparatus 10 will be described with reference to FIGS. 2 and 3.

  As shown in FIGS. 2 and 3, the liquid processing apparatus 10 includes a processing chamber (chamber) 20 in which a wafer W is accommodated and liquid processing of the accommodated wafer W is performed. As shown in FIG. 3, a holding unit 21 for holding and rotating the wafer W in a horizontal state is provided in the processing chamber 20, and a ring-shaped rotary cup 40 is provided around the holding unit 21. Is arranged. As shown in FIGS. 2 and 3, a cylindrical cup outer cylinder 50 is disposed around the rotary cup 40 in the processing chamber 20. As will be described later, the cup outer peripheral cylinder 50 can be raised and lowered according to the processing state of the wafer W. Details of the configurations of the holding portion 21, the rotating cup 40, and the cup outer peripheral cylinder 50 will be described later.

Further, the liquid processing apparatus 10 includes a nozzle 82a for supplying a processing liquid and a fluid such as N ₂ gas to the wafer W held by the holding unit 21 from above the wafer W, and a nozzle for supporting the nozzle 82a. A support arm 82 is provided. As shown in FIG. 2, a plurality of (specifically, for example, six) nozzle support arms 82 are provided in one liquid processing apparatus 10, and a nozzle 82 a is provided at the tip of each nozzle support arm 82. Yes. Further, as shown in FIG. 3, each nozzle support arm 82 is provided with an arm support portion 84, and each arm support portion 84 is driven in the left-right direction in FIG. 3 by an arm drive mechanism 85 described later. It has become. As a result, each nozzle support arm 82 linearly moves in a horizontal direction between the advanced position where the nozzle 82a has advanced into the processing chamber 20 and the retracted position where the nozzle 82a has retracted from the processing chamber 20. (See the arrows provided on each nozzle support arm 82 in FIGS. 2 and 3). As shown in FIG. 3, each nozzle support arm 82 is provided with a surface treatment fluid supply pipe 82 m, and each surface treatment fluid supply pipe 82 m is connected to a surface treatment fluid supply unit 89. A fluid such as a treatment liquid or N ₂ gas is supplied from the surface treatment fluid supply unit 89 to the nozzles 82a of the nozzle support arms 82 via the surface treatment fluid supply pipes 82m.

  As shown in FIGS. 2 and 3, in the liquid processing apparatus 10, an arm standby unit 80 is provided adjacent to the processing chamber 20. In this arm standby section 80, the nozzle support arm 82 retracted from the processing chamber 20 is on standby. A wall 90 extending in the vertical direction is provided between the arm standby unit 80 and the processing chamber 20. The wall 90 has an arm cleaning portion 88 provided with an opening 88p through which each nozzle support arm 82 can pass. The nozzle cleaning arm 82 is cleaned by the arm cleaning unit 88. Details of the configuration of the arm cleaning unit 88 will be described later.

Further, as shown in FIG. 3, an FFU (fan filter unit) 70 is provided above the processing chamber 20, and a gas such as N ₂ gas (nitrogen gas) or clean air is processed from the FFU 70 in a down flow. It is sent into the chamber 20. As shown in FIGS. 2 and 3, an exhaust portion 54 is provided inside the cup outer peripheral cylinder 50 at the bottom of the processing chamber 20, and the exhaust portion 54 exhausts the atmosphere in the processing chamber 20. It has come to be. As described above, a gas such as clean air is sent from the FFU 70 into the processing chamber 20 in a down flow, and the gas in the processing chamber 20 is replaced by exhausting the gas by the exhaust unit 54. ing.

  As shown in FIGS. 2 and 3, an exhaust portion 56 is provided outside the cup outer peripheral cylinder 50 at the bottom of the processing chamber 20, and the exhaust portion 56 exhausts the atmosphere in the processing chamber 20. It has come to be. The exhaust part 56 can exhaust the atmosphere outside the cup outer peripheral cylinder 50 in the processing chamber 20. Specifically, the exhaust unit 56 prevents the atmosphere in the arm standby unit 80 from entering the cup outer peripheral cylinder 50. Further, the exhaust part 56 prevents the atmosphere in the cup outer cylinder 50 from coming out to the arm standby part 80.

  As shown in FIGS. 2 and 3, an exhaust unit 58 is provided at the bottom of the arm standby unit 80, and the atmosphere in the arm standby unit 80 is exhausted by the exhaust unit 58. Yes. Specifically, particles generated from an arm drive mechanism 85 (described later) for driving each nozzle support arm 82 can be sucked and removed by the exhaust unit 58.

  As shown in FIG. 2, shutters 60 and 62 for maintenance are provided at the processing chamber 20 of the liquid processing apparatus 10 and the entrance / exit of the arm standby unit 80, respectively. Since the processing chamber 20 and the arm standby unit 80 are provided with maintenance shutters 60 and 62, respectively, the devices in the process chamber 20 and the arm standby unit 80 can be individually maintained. In addition, while the wafer W is being processed in the processing chamber 20, it is possible to maintain the equipment in the arm standby unit 80 by opening the shutter 62.

  In addition, as shown in FIG. 2, an opening 94 a is provided on the side wall of the liquid processing apparatus 10 for carrying the wafer W into the processing chamber 20 by the transfer arm 104 and carrying the wafer W out of the processing chamber 20. The opening 94a is provided with a shutter 94 for opening and closing the opening 94a.

  In the liquid processing apparatus 10 shown in FIG. 2, the region inside the cup outer cylinder 50 in the processing chamber 20 is slightly positive with respect to the clean room, while the cup outer cylinder 50 in the processing chamber 20 is The outer area has a slight negative pressure against the clean room. For this reason, in the processing chamber 20, the air pressure in the region inside the cup outer peripheral tube 50 is higher than the air pressure in the region outside the cup outer peripheral tube 50.

  Next, details of the configuration of the liquid processing apparatus 10 as shown in FIGS. 2 and 3 will be described with reference to FIGS. 4 and 5.

  As shown in FIGS. 4 and 5, the holding unit 21 includes a disk-shaped holding plate 26 for holding the wafer W, and a disk-shaped lift pin plate 22 provided above the holding plate 26. ing. Three lift pins 23 for supporting the wafer W from below are provided on the upper surface of the lift pin plate 22 at equal intervals in the circumferential direction. In FIGS. 4 and 5, only two lift pins 23 are shown. The lift pin plate 22 is provided with a piston mechanism 24, and the lift pin plate 22 is moved up and down by the piston mechanism 24. More specifically, when the wafer W is placed on the lift pins 23 or taken out from the lift pins 23 by the transfer arm 104 (see FIG. 1), the lift pin plate 22 is moved to the position shown in FIG. The lift pin plate 22 is moved upward from a position as shown, and the lift pin plate 22 is positioned above the rotary cup 40. On the other hand, when liquid processing of the wafer W is performed in the processing chamber 20, the lift pin plate 22 is moved to a lower position as shown in FIG. 4 etc. by the piston mechanism 24, and the rotary cup 40 is positioned around the wafer W. To come.

  The holding plate 26 is provided with three holding members 25 for supporting the wafer W from the side at equal intervals in the circumferential direction. In FIGS. 4 and 5, only two holding members 25 are shown. Each holding member 25 holds the wafer W on the lift pins 23 when the lift pin plate 22 moves from the upper position to the lower position as shown in FIGS. 4 and 5, and the wafer W is slightly separated from the lift pins 23. It is supposed to let you. Each holding member 25 has a structure movable to a receiving position for receiving the wafer W and a holding position for holding the wafer W, and moves in conjunction with the lifting and lowering of the lift pin plate 22. That is, each holding member 25 is moved to the receiving position when the lift pin plate 22 is moved to the information position, and is moved to the holding position when the lift pin plate 22 is moved to the lower position.

  Further, through holes are formed in the center portions of the lift pin plate 22 and the holding plate 26, respectively, and a processing liquid supply pipe 28 is provided so as to pass through these through holes. The processing liquid supply pipe 28 supplies a processing liquid such as a chemical liquid or pure water to the back surface of the wafer W held by each holding member 25 of the holding plate 26. Further, the processing liquid supply pipe 28 moves up and down in conjunction with the lift pin plate 22. A head portion 28 a is provided at the upper end of the processing liquid supply pipe 28 so as to close the through hole of the lift pin plate 22. Further, as shown in FIG. 4 and the like, a processing liquid supply unit 29 is connected to the processing liquid supply pipe 28, and the processing liquid is supplied to the processing liquid supply pipe 28 by the processing liquid supply unit 29. ing.

  As shown in FIGS. 4 and 5, a ring-shaped rotating cup 40 is disposed around the holding portion 21. The rotating cup 40 is attached to the holding plate 26 and rotates integrally with the holding plate 26. More specifically, the rotary cup 40 is provided so as to surround the wafer W supported by the holding members 25 of the holding plate 26 from the side. It is designed to receive the processing liquid that is scattered.

  In addition, a drain cup 42, a first guide cup 43, a second guide cup 44, and a third guide cup 45 are provided around the rotary cup 40 from the top. The drain cup 42 and the guide cups 43, 44, 45 are each formed in a ring shape. Here, the drain cup 42 is fixed in the processing chamber 20. On the other hand, a lift cylinder (not shown) is connected to each guide cup 43, 44, 45, and these guide cups 43, 44, 45 can be raised and lowered independently of each other by the corresponding lift cylinder. Yes.

  As shown in FIGS. 4 and 5, below the drain cup 42 and the guide cups 43, 44, 45, there are a first processing liquid recovery tank 46a, a second processing liquid recovery tank 46b, and a third processing liquid recovery. Tank 46c and a fourth processing liquid recovery tank 46d are provided. Depending on the position of each guide cup 43, 44, 45 in the vertical direction, when the wafer W is subjected to the liquid processing, the processing liquid scattered laterally from the wafer W is divided into four types based on the type of the processing liquid. The liquid is selectively sent to any one of the processing liquid recovery tanks 46a, 46b, 46c, and 46d. Specifically, when all the guide cups 43, 44, and 45 are all in the upper position (as shown in FIGS. 4 and 5), the processing liquid splashed laterally from the wafer W is recovered as the fourth processing liquid. It is sent to the tank 46d. On the other hand, when only the third guide cup 45 is in the lower position, the processing liquid scattered laterally from the wafer W is sent to the third processing liquid recovery tank 46c. Further, when the second guide cup 44 and the third guide cup 45 are in the lower position, the processing liquid splashed laterally from the wafer W is sent to the second processing liquid recovery tank 46b. Further, when all the guide cups 43, 44, 45 are in the lower position, the processing liquid splashed laterally from the wafer W is sent to the first processing liquid recovery tank 46a.

  As shown in FIGS. 4 and 5, an exhaust part 48 is provided inside the fourth processing liquid recovery tank 46d. The atmosphere around the wafer W is exhausted by the exhaust unit 48 by setting the position of each guide cup 43, 44, 45 in the vertical direction to a predetermined position.

  Further, in the liquid processing apparatus 10 of the present embodiment, the cup outer peripheral cylinder 50 is provided around the drain cup 42 and the guide cups 43, 44, 45 in the processing chamber 20. The cup outer cylinder 50 can be moved up and down between a lower position as shown in FIG. 4 and an upper position as shown in FIG. As shown in FIGS. 2 and 3, the cup outer peripheral cylinder 50 is provided with an opening 50 m through which the nozzle support arm 82 can pass. When the cup outer cylinder 50 is in the upper position as shown in FIG. 5, the region in the cup outer cylinder 50 is isolated from the outside.

  Details of the configuration of the cup outer cylinder 50 will be described with reference to FIG. FIG. 6 is a perspective view showing the configuration of the cup outer cylinder 50. As shown in FIG. 6, openings 50m through which the nozzle support arms 82 can pass are provided on the side surface of the cup outer peripheral cylinder 50 according to the number of the nozzle support arms 82 (for example, six nozzle support arms 82 are provided). In this case, six openings 50m are provided). Further, a support member 50a for supporting the cup outer peripheral cylinder 50 is connected to the upper part of the cup outer peripheral cylinder 50, and a driving mechanism 50b for moving the support member 50a up and down is provided on the support member 50a. . And by raising / lowering the supporting member 50a by the drive mechanism 50b, the cup outer periphery cylinder 50 supported by this supporting member 50a is also raised / lowered.

  As shown in FIGS. 4 and 5, a guide member 51 is attached to the FFU 70. As shown in FIG. 5, the guide member 51 is disposed so as to be slightly spaced inward from the cup outer peripheral tube 50 when the cup outer peripheral tube 50 is in the upper position. Further, in the liquid processing apparatus 10 of the present embodiment, when the cup outer peripheral tube 50 is in the upper position as shown in FIG. 5, the air pressure inside the cup outer peripheral tube 50 is higher than the air pressure outside the cup outer peripheral tube 50. It is supposed to be. For this reason, when the cup outer cylinder 50 is in the upper position, the downflow gas in the processing chamber 20 generated by the FFU 70 is moved from the inner side to the outer side of the cup outer cylinder 50 near the upper end of the cup outer cylinder 50 by the guide member 51. Guided.

  As shown in FIGS. 4 and 5, a cleaning unit 52 for cleaning the cup outer cylinder 50 is provided in the processing chamber 20. The cleaning portion 52 has a storage portion 52a for storing a cleaning liquid such as pure water. When the cup outer peripheral tube 50 is in the lower position as shown in FIG. It is immersed in the cleaning liquid stored in 52a. The cleaning unit 52 is configured to clean the cup outer cylinder 50 by immersing the cup outer cylinder 50 in the cleaning liquid stored in the storage portion 52a.

  As shown in FIG. 4, when the cup outer cylinder 50 is in the lower position, most of the cup outer cylinder 50 is immersed in the cleaning liquid stored in the storage portion 52a. Further, as shown in FIG. 5, even when the cup outer cylinder 50 is in the upper position, the lower part of the cup outer cylinder 50 is immersed in the cleaning liquid stored in the storage portion 52a. For this reason, when the cup outer cylinder 50 is in the upper position, a water seal is provided between the cleaning liquid stored in the storage portion 52a and the lower part of the cup outer cylinder 50, and the upper part of the cup outer cylinder 50 and the guide member 51 Since the gap is narrowed, the region in the cup outer cylinder 50 can be isolated from the outside.

  As shown in FIGS. 4 and 5, in the processing chamber 20, an exhaust portion 54 for exhausting the atmosphere in the processing chamber 20 is provided inside the cleaning portion 52, and the cleaning portion An exhaust unit 56 for exhausting the atmosphere in the processing chamber 20 is provided outside the chamber 52. By providing the exhaust part 54 and the exhaust part 56 as described above, when the cup outer peripheral cylinder 50 is at the lower position as shown in FIG. 4, the exhaust part 54 and the exhaust part 56 allow the entire inside of the processing chamber 20. The atmosphere can be exhausted. On the other hand, when the cup outer cylinder 50 is in the upper position as shown in FIG. 5, since the region in the cup outer cylinder 50 is isolated from the outside, the exhaust portion 54 exhausts the atmosphere inside the cup outer cylinder 50. In addition, the exhaust portion 56 can exhaust the atmosphere outside the cup outer peripheral cylinder 50.

As described above, in the present embodiment, a plurality of (specifically, for example, six) nozzle support arms 82 are provided in one liquid processing apparatus 10, and a nozzle 82 a is provided at the tip of each nozzle support arm 82. Is provided. Specifically, each nozzle 82a includes a first chemical liquid (specifically, for example, an acidic chemical liquid), a second chemical liquid (specifically, for example, an alkaline chemical liquid), pure water, and N ₂ gas. , IPA (isopropyl alcohol) and pure water mist are supplied to the upper surface of the wafer W.

  Hereinafter, the configuration of the nozzle support arm 82 will be described in detail with reference to FIGS. Here, FIG. 7 is a perspective view showing the processing chamber 20 and the six nozzle support arms 82p to 82u in the liquid processing apparatus 10 shown in FIG. 2 and the like, and FIG. 8 shows the nozzle support arms 82p to 82p shown in FIG. It is an expansion perspective view of 82u. FIG. 9 is a diagram showing a configuration of the nozzle support arms 82p to 82u shown in FIG. 7 and the like when viewed from the rear of the nozzle support arms 82p to 82u toward the processing chamber 20. FIG. 8 is a side sectional view showing details of the configuration of each nozzle support arm 82p to 82u shown in FIG. 7 and the like.

As shown in FIG. 7, the six nozzle support arms 82 include, for example, a pure water supply arm 82p, a first chemical liquid supply arm 82q, an N ₂ gas supply arm 82r, a second chemical liquid supply arm 82s, It is composed of a water mist supply arm 82t and an IPA supply arm 82u. As described above, the nozzles 82a are provided at the tips of these arms 82p to 82u. In this way, pure water is supplied to the upper surface of the wafer W from the nozzle 82a provided at the tip of the pure water supply arm 82p, and from the nozzle 82a provided at the tip of the first chemical solution supply arm 82q. (Specifically, for example, acid chemical liquid) first chemical solution is supplied to the upper surface of the wafer W, the supply to the upper surface of the N ₂ gas wafer from the nozzle 82a provided at the tip of the N ₂ gas supplying arm 82r It has come to be. A second chemical solution (specifically, for example, an alkaline chemical solution) is supplied to the upper surface of the wafer W from a nozzle 82a provided at the tip of the second chemical solution supply arm 82s, and is used for supplying pure water mist. Pure water mist is supplied to the upper surface of the wafer W from the nozzle 82a provided at the tip of the arm 82t, and IPA is supplied to the upper surface of the wafer W from the nozzle 82a provided at the tip of the IPA supply arm 82u. It is like that.

  As shown in FIGS. 8 and 10, each nozzle support arm 82 is provided with an arm drive mechanism 85 for causing the nozzle support arm 82 to linearly move. The arm drive mechanism 85 includes a motor 85a attached to the base member 85d and rotating in both forward and reverse directions, a pulley 85b attached to the base member 85d so as to face the motor 85a, and a circulation wound around the motor 85a and the pulley 85b. A belt 85c and a belt attachment member 85e attached to the circulation belt 85c are provided. Here, the belt attachment member 85e is attached to the lower part of the arm support part 84 which supports the nozzle support arm 82, and the belt attachment member 85e and the arm support part 84 move integrally. In such an arm drive mechanism 85, when the motor 85a rotates, the circulation belt 85c moves in the right direction or left direction in FIG. 10, and the belt attachment member 85e attached to the circulation belt 85c in FIG. By moving in the right direction or the left direction, the arm support portion 84 moves straight in the left-right direction in FIG. In this manner, the nozzle support arm 82 supported by the arm support portion 84 also moves straight in the left-right direction in FIG.

  In the liquid processing apparatus 10, since the arm drive mechanism 85 is provided outside the processing chamber 20, it is possible to prevent dust generated from the arm drive mechanism 85 from entering the processing chamber 20. it can. In addition, it is possible to suppress the atmosphere in the processing chamber 20 from reaching the arm driving mechanism 85.

Also, as shown in FIG. 9, among the six arms 82p to 82u described above, the pure water supply arm 82p, the N ₂ gas supply arm 82r, and the pure water mist supply arm 82t are installed at the same height level. Has been. More specifically, in FIG. 9, these arms 82p, 82r, and 82t are installed at the height level of the region surrounded by the two-dot chain line A in FIG. On the other hand, among the six arms 82p to 82u described above, the first chemical solution supply arm 82q, the second chemical solution supply arm 82s, and the IPA supply arm 82u are also installed at the same height level. More specifically, in FIG. 9, these arms 82q, 82s, and 82u are installed at the height level of the region surrounded by the two-dot chain line B in FIG. 9, the pure water supply arm 82p, the N ₂ gas supply arm 82r, and the pure water mist supply arm 82t are respectively a first chemical liquid supply arm 82q and a second chemical liquid supply. It is installed at a position higher than the arm 82s and the IPA supply arm 82u.

  Further, when a plurality of arms 82p to 82u having different height levels advance into the processing chamber 20 at the same time, the arms do not collide or interfere with each other.

  As shown in FIG. 10, each arm 82p-82u has a double piping structure. In more detail, each arm 82p-82u is comprised from the internal piping 82b and the external piping 82c. The internal pipe 82b communicates with the nozzle 82a, and fluid is sent from the internal pipe 82b to the nozzle 82a. The internal pipe 82b is made of, for example, a fluorine resin. The internal pipe 82b is covered with an external pipe 82c, and the external pipe 82c is made of, for example, a stainless steel pipe coated with a fluorine resin.

  Further, as shown in FIGS. 8 and 10 and the like, spiral pipes 83 (83p to 83u) communicating with the internal pipes 82b are provided outside the arms 82p to 82u on the rear end sides of the arms 82p to 82u. Are provided. Each spiral pipe 83p-83u is formed from a flexible material. Specifically, each of the spiral-shaped pipes 83p to 83u is formed of, for example, a tube made of fluorine resin or the like bent into a spiral shape. As shown in FIGS. 7, 8, and 10, the spiral-shaped pipes 83 p to 83 u each have a plane orthogonal to the extending direction of the arms 82 p to 82 u when the corresponding arms 82 p to 82 u are in the retracted position ( That is, a spiral shape is formed on a plane extending in the vertical direction. Then, when a fluid such as a chemical solution is sent to each of the spiral pipes 83p to 83u, the fluid is jetted downward from the nozzle 82a via the internal pipe 82b provided inside each arm 82p to 82u. Yes. Moreover, since each spiral-shaped piping 83p-83u is formed from the flexible material, when the corresponding arm 82p-82u advances into the process chamber 20, spiral-shaped piping 83p-83u is shown in FIG. By deforming from such a spiral shape, it becomes a conical spiral shape (a spiral shape whose tip gradually narrows).

  Moreover, each arm 82p-82u is rotatable centering | focusing on the longitudinal direction axis | shaft along the moving direction of the said arms 82p-82u. Specifically, as shown in FIG. 8, each arm 82p to 82u is provided with a rotation mechanism 86, and the arm 82p to 82u is rotated in the direction of the arrow in FIG. ing. By rotating the arms 82p to 82u, the direction of the nozzle 82a can be changed from the downward direction as shown in FIG. 10 to another direction. In addition, since each of the spiral-shaped pipes 83p to 83u has a spiral shape and is formed of a flexible material, even if each of the arms 82p to 82u is rotated by the rotation mechanism 86, the corresponding spiral-shaped pipe 83p. ˜83u is smoothly deformed in accordance with the rotation of the arms 82p to 82u, and the rotation of the arms 82p to 82u is not hindered by the spiral pipes 83p to 83u.

  The rotation mechanism 86 selectively rotates the arms 82p to 82u supporting the nozzle 82a about the longitudinal axis when supplying the fluid to the wafer W held by the holding unit 21 by the nozzle 82a. It has become. Specifically, when the nozzle 82a approaches the peripheral portion of the wafer W held by the holding unit 21, the arms 82p to 82u rotate so that the direction of the nozzle 82a is inclined obliquely from the downward direction. As a result, fluid is ejected obliquely downward from the nozzle 82a at the peripheral edge of the wafer W held by the holding unit 21, so that the fluid supplied from the nozzle 82a to the wafer W, specifically, a chemical solution, etc. With respect to the liquid, liquid splash on the peripheral edge of the wafer W can be suppressed. As described above, the rotation mechanism 86 can change the direction of the nozzle 82a between the case where the nozzle 82a is located at the center of the wafer W and the case where the nozzle 82a is located at the peripheral edge of the wafer W. .

  As shown in FIGS. 7 and 10, each arm 82p to 82u is provided with an arm cleaning section 88 for cleaning the arms 82p to 82u in a fixed position for each arm 82p to 82u. . Each arm cleaning unit 88 is configured to clean the arms 82p to 82u when the corresponding arms 82p to 82u move. The timing of cleaning the arms 82p to 82u by the arm cleaning section 88 can be set freely. Specifically, the cleaning of the arms 82p to 82u is performed, for example, for each process or for one day. Once a month or once a month.

  Details of the configuration of the arm cleaning unit 88 will be described with reference to FIG. As shown in FIG. 10, the arm cleaning section 88 is provided with a through hole through which the nozzle support arm 82 (82p to 82u) passes so as to extend in the horizontal direction (left and right direction in FIG. 10). The cross section of the through hole is slightly larger than the cross section of the nozzle support arm 82. The through hole is provided with a storage portion 88a for storing the cleaning liquid. Further, a cleaning liquid supply pipe 88b is connected to the storage portion 88a, and the cleaning liquid is supplied from the cleaning liquid supply pipe 88b to the storage portion 88a. When the cleaning liquid is supplied to the storage portion 88a, a liquid film is stretched on the outer peripheral surface of the nozzle support arm 82 in the storage portion 88a. In the arm cleaning unit 88, the nozzle support arm 82 moves while the nozzle support arm 82 (82p to 82u) is in contact with a part of the cleaning liquid stored in the storage portion 88a, so that the nozzle support arm 82 is cleaned. To be done.

  Further, in the arm cleaning unit 88, the nozzle support arm 82 is moved in the moving direction (left and right direction in FIG. 10) at a front position closer to the processing chamber 20 than the storage portion 88a and a rear position farther from the processing chamber 20 than the storage portion 88a. Suction mechanisms 88c and 88d are provided, respectively. These suction mechanisms 88c and 88d are adapted to suck and drain the amount of the cleaning liquid leaked when the cleaning liquid stored in the storage portion 88a leaks from the storage portion 88a to the outside. The suction mechanism is not necessarily provided at both the front position and the rear position with respect to the accommodating portion 88a in the moving direction of the nozzle support arm 82. Instead, the suction mechanism is located in front of the accommodating portion 88a in the moving direction of the nozzle support arm 82. The suction mechanism may be provided only in one of the position and the rear position.

  Further, the suction mechanisms 88c and 88d are configured to dry the nozzle support arm 82 by sucking the droplets attached to the nozzle support arm 82 after the nozzle support arm 82 has been cleaned.

  Further, in the arm cleaning unit 88, a drainage portion 88e for discharging a liquid such as a chemical solution remaining in the internal pipe 82b of the nozzle support arm 82 at a position behind the housing portion 88a in the moving direction of the nozzle support arm 82. Is provided. In addition, a drain pipe 88f is connected to the drainage portion 88e, and the liquid sent to the drainage portion 88e is discharged by the drain pipe 88f. Then, the nozzle support arm 82 moves so that the nozzle 82a is positioned directly above the drainage portion 88e, and liquid such as a chemical solution remaining in the internal pipe 82b of the nozzle support arm 82 is discharged from the nozzle 82a to the drainage portion 88e. It has come to be. By providing such a drainage portion 88e, even if liquid remains in the internal pipe 82b of the nozzle support arm 82 after the liquid processing of the wafer W is completed, the nozzle support arm 82 is provided with the liquid discharge portion 88e. When performing the next liquid treatment using the provided nozzle 82a, the liquid remaining in the internal pipe 82b can be discharged from the internal pipe 82b in advance. In particular, when a high-temperature chemical solution or the like is supplied to the wafer W from the nozzle 82a, the liquid remaining in the internal pipe 82b of the nozzle support arm 82 is often cooled, so that the remaining cooled liquid is discharged. It is desirable to discharge from the internal pipe 82b in advance by the liquid portion 88e.

  In addition, the drainage part 88e may be provided in the position ahead rather than the accommodating part 88a rather than the back position rather than the accommodating part 88a in the moving direction of the nozzle support arm 82. Even in this case, the nozzle support arm 82 moves so that the nozzle 82a is located immediately above the drainage portion 88e, and the chemical liquid remaining in the internal pipe 82b of the nozzle support arm 82 is discharged by discharging the chemical liquid from the nozzle 82a. The liquid is sent from the nozzle 82a to the drainage portion 88e.

  As shown in FIGS. 7 and 10, each arm cleaning unit 88 corresponding to each arm 82 p to 82 u is attached to the outside of the wall 90 provided between the processing chamber 20 and the arm standby unit 80. ing. For this reason, each arm washing | cleaning part 88 comes to be provided in the outer side of the cup outer periphery cylinder 50. FIG. Each arm cleaning unit 88 may be attached to the inside of the wall 90 instead of being attached to the outside of the wall 90. In this case, each arm cleaning unit 88 is located in a region between the rotary cup 40 and the arm standby unit 80.

  The arm cleaning unit 88 may be configured to clean the entire nozzle support arm 82 (full length), or may be configured to clean only a part of the nozzle support arm 82. The arm cleaning unit 88 is configured to clean the entire circumference of the nozzle support arm 82, but is not limited thereto.

  As shown in FIGS. 2 and 10, the arms 82 p to 82 u are armed on the wall 90 provided between the processing chamber 20 and the arm standby unit 80 when waiting on the arm standby unit 80. The opening 88p of the cleaning unit 88 is closed. As a result, each arm 82p to 82u functions as a lid for closing the opening 88p of the arm cleaning unit 88 of the wall 90, and the region in the processing chamber 20 and the region of the arm standby unit 80 can be isolated. become able to.

  Moreover, each arm 82p-82u can also block | close the opening 50m of the cup outer periphery cylinder 50 in an upper position as shown in FIG. As a result, the region in the cup outer peripheral cylinder 50 and the region of the arm standby portion 80 can be isolated.

  Next, the operation of the liquid processing apparatus 10 will be described.

  First, the lift pin plate 22 and the processing liquid supply pipe 28 in the holding unit 21 are moved upward from the position shown in FIG. 4, and the shutter 94 provided in the opening 94a of the processing chamber 20 is retracted from the opening 94a. Opening 94a is performed. Then, the wafer W is transferred from the outside of the liquid processing apparatus 10 to the processing chamber 20 by the transfer arm 104 through the opening 94 a, and the wafer W is placed on the lift pins 23 of the lift pin plate 22. Is withdrawn from the processing chamber 20. At this time, the cup outer peripheral cylinder 50 is located at a lower position as shown in FIG. Further, each nozzle support arm 82 is located at a retracted position retracted from the processing chamber 20. That is, each nozzle support arm 82 is on standby at the arm standby unit 80. Further, a gas such as clean air is always sent in a down flow from the FFU 70 into the processing chamber 20, and this gas is exhausted by the exhaust unit 54, whereby the atmosphere in the processing chamber 20 is replaced. Yes.

  Next, the lift pin plate 22 and the processing liquid supply pipe 28 are moved downward, and the lift pin plate 22 and the processing liquid supply pipe 28 are positioned at a lower position as shown in FIG. At this time, each holding member 25 provided on the holding plate 26 supports the wafer W on the lift pins 23 and slightly separates the wafer W from the lift pins 23.

  Thereafter, or while the lift pin plate 22 is being lowered, the cup outer peripheral cylinder 50 is moved upward by the drive mechanism 50b provided in the cup outer peripheral cylinder 50, and the cup outer peripheral cylinder 50 is moved to the upper position as shown in FIG. Position. Then, after the cup outer peripheral cylinder 50 moves to the upper position, one or a plurality of nozzle support arms 82 among the six nozzle support arms 82 waiting in the arm standby unit 80 are the openings 88p of the arm cleaning unit 88 of the wall 90. And it advances into the processing chamber 20 through the opening 50m of the cup outer cylinder 50 (refer to the two-dot chain line in FIG. 5). At this time, the nozzle driving arm 82 performs linear motion by the arm driving mechanism 85.

  Then, the holding plate 26 and the lift pin plate 22 in the holding unit 21 are rotated. As a result, the wafer W supported by each holding member 25 of the holding plate 26 also rotates.

  Thereafter, first, the wafer W supported by each holding member 25 of the holding plate 26 is processed with an acidic chemical solution, and then a rinse process is performed. Specifically, in the state shown in FIG. 5, the first chemical supply arm 82q and the pure water supply arm 82p out of the six nozzle support arms 82 waiting in the arm standby section 80 are respectively the walls 90. The arm cleaning unit 88 advances simultaneously into the processing chamber 20 through the opening 88p of the arm cleaning section 88 and the opening 50m of the cup outer peripheral cylinder 50. At this time, the nozzle 82a of the first chemical supply arm 82q is positioned right above the center of the wafer W, and the nozzle 82a of the pure water supply arm 82p is positioned slightly above the center of the wafer. I will let you. Since the first chemical solution supply arm 82q and the pure water supply arm 82p have different height levels, the first chemical solution supply arm 82q and the pure water supply arm 82p are connected to the processing chamber 20. These arms 82q and 82p do not interfere with each other when they are simultaneously advanced.

  Then, in a state where the wafer W is rotated, an acidic chemical solution is supplied to the upper surface of the wafer W from the nozzle 82a located right above the center of the wafer W of the first chemical solution supply arm 82q that has advanced into the processing chamber 20. . At this time, an acidic chemical solution may be supplied from the processing solution supply pipe 28 toward the lower surface (back surface) of the wafer W. In this way, the acidic chemical solution is supplied to at least the upper surface of the wafer W, and the chemical treatment of the wafer W is performed. The acidic chemical supplied to the wafer W is sent to, for example, the first processing liquid recovery tank 46a out of the four processing liquid recovery tanks 46a, 46b, 46c, and 46d and recovered. Further, when the above chemical solution treatment is performed, the pure water supply arm 82p is moved to a position slightly retracted from the acidic chemical solution discharge position by the nozzle 82a of the first chemical solution supply arm 82q. It waits in the processing chamber 20 so that the nozzle 82a of the supply arm 82p is positioned.

  Then, after the acidic chemical solution is supplied to the wafer W supported by each holding member 25 of the holding plate 26, pure water is continuously supplied to the wafer W without interruption. Specifically, an acidic chemical solution is supplied to the wafer W from a nozzle 82a (located right above the center of the wafer) provided in the first chemical solution supply arm 82q that has advanced into the processing chamber 20. After that, the nozzle 82a of the first chemical solution supply arm 82q is retracted from right above the center of the wafer W, and at the same time, the pure water supply arm 82p that has advanced into the processing chamber 20 and has been waiting has slightly changed. The nozzle 82a of the pure water supply arm 82p is positioned just above the center of the wafer W, and the supply of pure water is started. The pure water supplied to the wafer W is sent to, for example, the third processing liquid recovery tank 46c among the four processing liquid recovery tanks 46a, 46b, 46c, and 46d and recovered. In this manner, the wafer W is processed with the acidic chemical solution in the cup outer peripheral cylinder 50, and then the rinsing process is subsequently performed. At this time, since the pure water supply arm 82p and the first chemical liquid supply arm 82q are different from each other in the processing chamber 20, the arms 82p and 82q do not interfere with each other. When the processing with the acidic chemical solution on the wafer W is completed, the first chemical solution supply arm 82q that has advanced into the processing chamber 20 is retracted from the processing chamber 20 and waits at the arm standby unit 80. On the other hand, the pure water supply arm 82 p remains in the processing chamber 20. Further, during the rinsing process, the second chemical liquid supply arm 82 s advances into the processing chamber 20 through the opening 88 p of the arm cleaning unit 88 of the wall 90 and the opening 50 m of the cup outer cylinder 50. More specifically, when the rinsing process as described above is performed, the second chemical liquid supply arm 82s is in a position slightly retracted from the pure water discharge position by the nozzle 82a of the pure water supply arm 82p. It waits in the processing chamber 20 so that the nozzle 82a of the 2nd chemical | medical solution supply arm 82s may be located.

  Thereafter, the wafer W supported by each holding member 25 of the holding plate 26 is treated with an alkaline chemical solution, and then rinsed. More specifically, the second chemical solution supply arm 82s and the pure water supply arm 82p that have advanced into the processing chamber 20 perform the treatment with the chemical solution and the rinsing process on the wafer W. At this time, since the second chemical liquid supply arm 82s and the pure water supply arm 82p have different height levels, the arms 82s and 82p do not interfere with each other.

  More specifically, an alkaline chemical solution is supplied to the upper surface of the wafer W from the nozzle 82a of the second chemical solution supply arm 82s that has advanced into the processing chamber 20 while the wafer W is rotated. At this time, an alkaline chemical may be supplied from the processing liquid supply pipe 28 toward the lower surface (back surface) of the wafer W. In this way, the alkaline chemical solution is supplied to at least the upper surface of the wafer W, and the chemical treatment of the wafer W is performed. The alkaline chemical liquid supplied to the wafer W is sent to, for example, the second processing liquid recovery tank 46b among the four processing liquid recovery tanks 46a, 46b, 46c, and 46d and recovered. Further, when the above chemical solution treatment is performed, the pure water supply arm 82p is moved to a position slightly retracted from the alkaline chemical solution discharge position by the nozzle 82a of the second chemical solution supply arm 82s. It waits in the processing chamber 20 so that the nozzle 82a of the supply arm 82p is positioned.

  Then, after the alkaline chemical solution is supplied to the wafer W supported by the holding members 25 of the holding plate 26, pure water is continuously supplied to the wafer W without interruption. Specifically, after supplying an alkaline chemical liquid to the wafer W from the nozzle 82a provided in the second chemical liquid supply arm 82s that has advanced into the processing chamber 20, the pure liquid that has advanced into the processing chamber 20 is supplied. Pure water is continuously supplied to the wafer W from the nozzle 82a provided on the water supply arm 82p without interruption. The pure water supplied to the wafer W is sent to, for example, the third processing liquid recovery tank 46c among the four processing liquid recovery tanks 46a, 46b, 46c, and 46d and recovered. In this manner, the wafer W is processed with the alkaline chemical solution in the cup outer peripheral cylinder 50, and then the rinsing process is subsequently performed. When the processing with the alkaline chemical solution and the rinsing process for the wafer W are completed, the second chemical solution supply arm 82s and the pure water supply arm 82p that have advanced into the processing chamber 20 are retracted from the processing chamber 20 and the arm standby unit. Wait at 80. Further, while the rinsing process as described above is performed, the IPA supply arm 82u advances into the processing chamber 20 through the opening 88p of the arm cleaning unit 88 of the wall 90 and the opening 50m of the cup outer peripheral cylinder 50. More specifically, when the rinsing process as described above is performed, the IPA supply arm 82u is moved to a position slightly retracted from the pure water discharge position by the nozzle 82a of the pure water supply arm 82p. It waits in the processing chamber 20 so that the nozzle 82a of the arm 82u is located.

Thereafter, the wafer W supported by each holding member 25 of the holding plate 26 is dried by IPA. Specifically, among the six nozzle support arms 82 waiting in the arm standby unit 80, the N ₂ gas supply arm 82r passes through the opening 88p of the arm cleaning unit 88 of the wall 90 and the opening 50m of the cup outer cylinder 50. To advance into the processing chamber 20. In this manner, the N ₂ gas supply arm 82r and the IPA supply arm 82u are advanced into the processing chamber 20, respectively. At this time, since the N ₂ gas supply arm 82r and the IPA supply arm 82u have different height levels, the arms 82r and 82u do not interfere with each other.

Then, after the wafer W is rotated, the IPA is supplied to the wafer W from the nozzle 82a provided in the IPA supply arm 82u that has advanced into the processing chamber 20, and then the IPA is supplied to the wafer W. In contrast, N ₂ gas is supplied from a nozzle 82a provided in an N ₂ gas supply arm 82r that has advanced into the processing chamber 20. Specifically, in the processing chamber 20, IPA is supplied to the center of the wafer W by a nozzle 82a provided in the IPA supply arm 82u. Thereafter, the IPA supply arm 82u moves from the center of the wafer W to the peripheral portion, and gas is applied to the region on the wafer W after the IPA is supplied by the nozzle 82a provided in the N ₂ gas supply arm 82r. The IPA supply arm 82u and the N ₂ gas supply arm 82r are moved on the wafer W so that the region on the wafer W to which the gas is injected follows. In this way, the N ₂ gas is immediately supplied to the location where the IPA is supplied on the surface of the wafer W, so that the wafer W can be appropriately dried. The IPA supplied to the wafer W is sent to, for example, the fourth processing liquid recovery tank 46d out of the four processing liquid recovery tanks 46a, 46b, 46c, and 46d and recovered. When the drying process of the wafer W is completed, the IPA supply arm 82u and the N ₂ gas supply arm 82r that have advanced into the process chamber 20 are retracted from the process chamber 20 and wait in the arm standby unit 80.

  When the wafer drying process is completed, the cup outer peripheral cylinder 50 is moved downward by the drive mechanism 50b provided in the cup outer peripheral cylinder 50, and the cup outer peripheral cylinder 50 is positioned at the lower position as shown in FIG.

  Thereafter, the lift pin plate 22 and the processing liquid supply pipe 28 in the holding unit 21 are moved upward from the positions shown in FIG. At this time, the wafer W supported by the holding member 25 of the holding plate 26 is transferred onto the lift pins 23 of the lift pin plate 22. Next, the opening 94a is opened by retracting the shutter 94 provided in the opening 94a of the processing chamber 20 from the opening 94a, and the transfer arm 104 is moved into the processing chamber 20 from the outside of the liquid processing apparatus 10 through the opening 94a. The wafer W on the lift pins 23 of the lift pin plate 22 is taken out by the transfer arm 104. The wafer W taken out by the transfer arm 104 is transferred to the outside of the liquid processing apparatus 10. In this way, a series of liquid processing of the wafer W is completed.

  The cleaning of each nozzle support arm 82 may be performed by the arm cleaning unit 88 when the nozzle support arm 82 moves from the processing chamber 20 to the retracted position in the arm standby unit 80. Further, the cleaning of each nozzle support arm 82 may be performed after each processing on the wafer W, or may be performed periodically.

  In the liquid processing apparatus 10, the arm cleaning unit 88 is provided in a fixed position on the arm standby unit 80, and this arm cleaning unit 88 can clean the nozzle support arm 82 when the nozzle support arm 82 moves. It is like that. As described above, by cleaning the nozzle support arm 82 by the arm cleaning unit 88, the nozzle support arm 82 can enter the processing chamber 20 without being contaminated. It is possible to prevent the wafer W in the processing chamber 20 from being contaminated by dirt adhering to the substrate. Furthermore, by providing the arm cleaning unit 88 outside the processing chamber 20, it is possible to prevent the airflow in the processing chamber 20 from being disturbed.

  Further, in the liquid processing apparatus 10, the arm cleaning unit 88 has a storage portion 88 a in which the cleaning liquid is stored. In the arm cleaning unit 88, one of the nozzle support arms 82 is added to the cleaning liquid stored in the storage portion 88 a. The nozzle support arm 82 is cleaned by moving the nozzle support arm 82 while the parts are in contact with each other. In this case, since the nozzle support arm 82 can be cleaned with the cleaning liquid stored in the storage portion 88a whose position is fixed without moving the arm cleaning unit 88, a mechanism for cleaning the arm is provided. Can be simple.

  Further, in the liquid processing apparatus 10, the nozzle support arm 82 has an internal pipe 82 b for sending fluid to the nozzle 82 a, and the arm cleaning unit 88 has a housing portion 88 a in the moving direction of the nozzle support arm 82. Further, a drainage portion 88e for discharging the liquid remaining in the internal pipe 82b of the nozzle support arm 82 is provided at the rear position. Then, the nozzle support arm 82 moves so that the nozzle 82a is positioned immediately above the drainage portion 88e, so that the liquid discharged from the internal pipe 82b of the nozzle support arm 82 is sent from the nozzle 82a to the drainage portion 88e. It is like that. As a result, even after the liquid processing of the wafer W is completed, even if unnecessary liquid remains in the internal pipe 82b of the nozzle support arm 82, the nozzle 82a provided on the nozzle support arm 82 is used to perform the next process. When the liquid treatment is performed, the liquid remaining in the internal pipe 82b can be discharged from the internal pipe 82b in advance. In particular, when a high-temperature chemical solution or the like is supplied to the wafer W from the nozzle 82a, the liquid remaining in the internal pipe 82b of the nozzle support arm 82 is often cooled, so that the remaining cooled liquid is discharged. It is desirable to discharge from the internal pipe 82b in advance by the liquid portion 88e.

  Further, in the liquid processing apparatus 10, the arm cleaning unit 88 is provided outside the cup outer peripheral cylinder 50. As a result, it is possible to prevent the air flow in the cup outer peripheral cylinder 50 from being disturbed by the arm cleaning unit 88.

  Note that the liquid processing apparatus is not limited to the above-described aspect, and various modifications can be made. For example, it is not necessary to supply the processing liquid to both the upper surface and the lower surface of the wafer W by the nozzle 82 a of the nozzle support arm 82 that has advanced into the processing chamber 20 and the processing liquid supply pipe 28, and the wafer by the nozzle 82 a of the nozzle support arm 82. The processing liquid may be supplied only to the upper surface of W.

  A plurality of nozzles can be provided on one nozzle support arm 82. Such a configuration example will be described with reference to FIG. 11 and FIG. In the configuration example shown in FIGS. 11 and 12, the same members as the components included in the configuration examples shown in FIGS. 7 to 10 are denoted by the same reference numerals (when there are two identical members). Duplicate explanation (with a dash on one side) is omitted.

  As shown in FIG. 11, in this configuration example, one nozzle support arm 82 is provided with two nozzles 82 a and 82 a ′. The opening ends 82 a 1 and 82 a 1 ′, which are the discharge ports of the nozzles 82 a and 82 a ′, are preferably located at the same position in the axial direction (longitudinal direction) of the nozzle support arm 82. Then, the work for teaching the reference position where the nozzle discharge port is located right above the center of the wafer W with respect to the arm driving mechanism 85 is performed once for one nozzle support arm 82. Further, preferably, the discharge ports of the nozzles 82a and 82a 'face in the opposite direction by 180 degrees.

  In the external pipe (outer cylinder) 82c of the nozzle support arm 82, two internal pipes 82b and 82b 'communicating with the two nozzles 82a and 82a' are provided. In this configuration example, the rotation mechanism 86A includes a motor 86a such as a step motor or a servo motor, a drive pulley 86b provided on the rotation shaft of the motor 86a, a driven pulley 86c provided on the external pipe 82c, a pulley 86b, It is composed of a timing belt 86d wound around 86c. By operating the rotation mechanism 86A, one of the two nozzles 82a and 82a ′ is moved to a rotation direction position suitable for the discharge of the processing liquid, specifically, a rotation direction in which the discharge port of the nozzle faces directly below. Can be positioned. The rotating mechanism 86 shown in FIG. 8 and the rotating mechanism 86A shown in FIG. 11 can be replaced with each other.

  In addition, two spiral pipes 83 and 83 ′ communicating with the two internal pipes 82b and 82b ′ are provided outside the end of the external pipe 82c opposite to the end on the nozzles 82a and 82a ′ side. ing. Surface treatment fluid supply pipes 82m and 82m ′ are connected to the spiral pipes 83 and 83 ′, respectively, and surface treatment fluid supplies for supplying different surface treatment fluids to the surface treatment fluid supply pipes 82m and 82m ′. Portions 89 and 89 ′ are connected to each other. The surface treatment fluid supply pipes 82m and 82m 'are provided with flow control means such as a flow meter and a flow rate adjustment valve (not shown).

  As shown in FIG. 12, when viewed from the axial direction of the nozzle support arm 82, the two spiral pipes 83 and 83 'are arranged so as to form a double spiral. Since the spiral pipes 83 and 83 ′ are made of a flexible material, when the nozzle support arm 82 is advanced into the processing chamber 20 by the arm drive mechanism 85, each of the two spiral pipes 83 and 83 ′ is a cone. It becomes a spiral shape (a spiral shape whose tip is gradually narrowed). In addition, when the nozzle support arm 82 is rotated around the axis by the rotation mechanism 86A, the spiral pipes 83 and 83 'are smoothly deformed in accordance with the rotation.

  In this way, by providing two nozzles 82a and 82a ′ in one nozzle support arm 82, the number of nozzle support arms 82 can be reduced, so that the space of the arm standby section 80 can be reduced, and consequently The footprint of the liquid processing apparatus 10 can be reduced. The number of nozzles provided in one nozzle support arm 82 is not limited to two, and may be three or more. In this case, the number of internal pipes and spiral pipes corresponding to the number of nozzles are provided. Even when three or more nozzles are provided in one nozzle support arm, it is preferable that the opening ends, which are the discharge ports of the nozzles, are at the same position in the axial direction (longitudinal direction) of the nozzle support arm. Further, the discharge ports of the plurality of nozzles are preferably provided at positions where the circumference is divided into N parts, preferably divided into N parts (N is the number of nozzles).

  Liquid processing in the liquid processing apparatus including the nozzle support arm 82 that supports the two nozzles 82a and 82a 'illustrated in FIGS. 11 and 12 will be described. The nozzles 82a and 82a ′ (hereinafter referred to as “first nozzle 82a” and “second nozzle 82a ′”), the nozzle support arm 82 and its peripheral components are configured as shown in FIGS. Except for this point, the configuration of the liquid processing apparatus is the same as that shown in FIGS.

First, the wafer W is carried into the processing chamber 20, and the wafer W is held by the holding unit 21 (see FIG. 4). Next, the nozzle support arm 82 shown in FIG. 11 is processed so that the first nozzle 82a is positioned right above the center of the wafer with the first nozzle 82a facing downward. Advance into the room 20. Next, the wafer is rotated at a predetermined number of revolutions, and a first processing liquid, for example, an acidic chemical liquid is discharged from the first nozzle 82a onto the wafer to perform a chemical liquid cleaning process on the wafer W. Thereafter, the discharge of the acidic chemical solution from the first nozzle 82a is stopped, and the second nozzle 82a ′ is rotated by rotating the nozzle support arm 82 without moving the nozzle support arm 82 back and forth (without moving in the longitudinal direction). The second processing liquid, for example, a rinsing liquid (DIW (pure water)) is discharged from the second nozzle 82a ′ to the wafer, and the wafer is rinsed. Thereafter, the nozzle support arm 82 is withdrawn from the processing chamber 20. Next, the wafer W is dried using the nozzle 82a of the N ₂ gas supply arm 82r and the nozzle 82a of the IPA supply arm 82u by the same procedure as described above. After the drying process is completed, the wafer W is unloaded from the process chamber 20.

  The liquid processing apparatus is further provided with one additional nozzle support arm having the configuration shown in FIG. 11, so that an alkaline chemical can be supplied from the first nozzle (82a) of the added nozzle support arm, and The rinsing liquid may be supplied from the second nozzle (82a ′). In this case, for example, after the chemical cleaning process with an acidic chemical and the subsequent rinsing process, the added nozzle support arm is advanced into the processing chamber 20 (the standby in the processing chamber 20 may be performed in advance). Preferably, a chemical cleaning process is performed on the wafer W by discharging an alkaline chemical from the first nozzle to the center of the wafer W, and then the second nozzle support arm is rotated by 180 degrees. The wafer may be rinsed by discharging a rinse liquid (DIW) to the center of the wafer W.

  In addition, the configuration in which a plurality of nozzles are provided in one nozzle support arm is not limited to application to the type in which the nozzle support arm described so far advances and retracts in the axial direction of the arm. The present invention can also be applied to a type in which the nozzle support arm pivots as described with reference to FIGS. 14 and 15. That is, as shown in FIG. 13, the arm drive mechanism 85 is removed from the configuration shown in FIG. 11, and the arm support portion 84 is supported by the rotation mechanism 91 schematically shown in FIG. The rotation mechanism 91 rotates (turns) the nozzle support arm 82 around a rotation axis 91a extending in the vertical direction. The nozzle support arm 82 and the rotation mechanism 91 shown in FIG. 13 can be provided in place of the arm 241 and the arm support portion 242 in the configuration shown in FIGS. 14 and 15. In FIG. 13, a member denoted by reference numeral 92 is a spin chuck that rotates the wafer W while holding the wafer W in a horizontal posture by the substrate holder, a member denoted by reference numeral 93 is a cup that receives the processing liquid scattered from the wafer W, and reference numeral The members shown at 94 are FFUs (fan filter units) that form a downflow in the processing chamber, which are schematically shown. According to the configuration example shown in FIG. 13, even in a conventional liquid processing apparatus in which the nozzle support arm turns (not limited to the type in which the nozzle support arm advances and retreats in the axial direction of the arm), one nozzle support arm is included. Even if the number of supported nozzles increases, the upper projected area of the entire nozzle does not increase. For this reason, it can suppress that the downflow from FFU is disturbed by the nozzle provided in the front-end | tip of a nozzle support arm.

21, 92 Substrate holding part 82a, 82a ′ (plural) nozzles 82a1, 82a1 ′ discharge port 82 Nozzle support arm 86, 86A Rotation mechanism

Claims (4)

A substrate holder for holding the substrate;
A plurality of nozzles for supplying fluid to the substrate held by the substrate holding unit;
A nozzle support arm for supporting the plurality of nozzles;
A rotation mechanism for rotating the nozzle support arm about a longitudinal axis of the nozzle support arm;
With
The discharge ports of the plurality of nozzles are arranged at different circumferential positions around the longitudinal axis, and any one of the plurality of nozzles holds the substrate depending on the rotational phase of the nozzle support arm. A liquid processing apparatus is provided so as to face a substrate held by a section.   The liquid processing apparatus according to claim 1, wherein the discharge ports of the plurality of nozzles are provided at the same axial position with respect to the longitudinal axis. A liquid processing method for liquid processing a substrate using a liquid processing apparatus having a nozzle support arm that supports at least a first nozzle and a second nozzle,
Supplying the first processing liquid from the first nozzle to the substrate with the first nozzle facing the substrate;
Rotating the nozzle support arm to direct the second nozzle toward the substrate, and supplying the second processing liquid from the second nozzle to the substrate in this state;
A method characterized by comprising:   The liquid processing method according to claim 3, wherein the rotation of the nozzle support arm is performed without moving the nozzle support arm.

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